Poster Session

Tuesday, December 8, 2020
​All times Eastern Standard Time
POSTER SESSION
10:00 AM - 1:00 PM
LIVE QUESTION AND ANSWER SESSION
​Chair: Andrew Sternberg, Vanderbilt University
PA-1
LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)
J. Osheroff, Science Systems Applications, Inc., USA, J. Lauenstein, R. Ladbury, NASA GSFC, USA
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A better understanding of the linear energy transfer and range of proton recoil ions in gallium nitride (GaN) is provided to facilitate proper evaluation of GaN device radiation tolerance.
PA-2
Impact of Total Ionizing Dose on Analog Synaptic Characteristics of CBRAM
P. Apsangi, H. Barnaby, N. Chamele, Y. Gonzalez-Velo, K. Holbert, M. Kozicki, Arizona State University, USA
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The changes caused by total ionizing dose in the conductance and linearity of analog CBRAM synapses are studied. FESEM imaging supports the conclusion that changes in conductance are due to loss of filament contact after irradiation.
PA-3
Laser and Heavy Ion Irradiation Effects on Advanced Perpendicular Anisotropy Spin Transfer-Torque Magnetic Tunnel Junctions
O. Coi, G. Di Pendina, E. Gautier, CEA, France, N. Andrianjohany, N. Chatry, TRAD, France, K. Gaarello, IMEC, Belgium, R. Ecoffet, D. Dangla, CNES, France, L. Torres, LIRMM-University of Montpellier 2, CNRS, France
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This paper investigates laser and heavy ion radiation effects on perpendicular-anisotropy spin transfer-torque magnetic tunnel junction devices and film stacks.
PA-4
Mapping Radiation Damage in Integrated Circuits Using Single Photon Absorption Charge Injection
E. Auden, Los Alamos National Laboratory, USA, J. Gutierrez, Northeastern University, USA, K. Gnawali, Southern Illinois University Carbondale, USA
 
Laser-induced single photon absorption charge injection is used to map damaged transistors in integrated circuits irradiated with gamma rays or neutrons. Radiation damage suppresses the charge injection response, resulting in darkened areas in laser scans.
PA-5
Simplified Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors
H. Hjalmarson, T. Buchheit, Sandia National Laboratories, USA, H. Barnaby, Arizona State University, USA, P. Adell, NASA-JPL, USA, S. Witczak, Northrop Grumman, USA
 
A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.
PB-1
IMuon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha-Particles
T. Kato, H. Matsuyama, Socionext, Inc., Japan, M. Tampo, S. Takeshita, Y. Miyake, High Energy Accelerator Research Organization, Japan, H. Tanaka, Kyoto University, Japan, M. Hashimoto, Osaka University, Japan
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Negative and positive muon-induced single-event upsets are studied in 20-nm planar SRAMs. Results from muon irradiation are compared with results from high-energy and thermal neutrons and alpha particle irradiation. The underlying mechanisms are discussed.
PB-2
An Investigation of SET Charge Transport Mechanisms in SiGe HBTs
D. Nergui, A. Ildefonso, G. Tzintzarov, A. Omprakash, J. Cressler, Georgia Institute of Technology, USA
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A fully calibrated 3-D TCAD model is used to investigate charge transport mechanisms during heavy-ion-induced single-event transients in SiGe HBTs.
PB-3
Impact of SiC VD-MOSFET Technology on Terrestrial Neutron Reliability
C. Martinella, R. Garcia Alia, A. Coronetti, Y. Kadi, CERN, Switzerland, R. Stark, U. Grossner, APS - ETH Zurich, Switzerland, C. Cazzaniga, M. Kastriotou, STFC, United Kingdom, A. Javanainen, RADEF, Finland
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Commercial SiC power MOSFETs were exposed to terrestrial neutron irradiations. The breakdown voltage degradation and the impact of the SEGR in planar and trench gate design are discussed, highlighting the differences between device technologies.
PB-4
 Low and Medium Earth-Orbit Rates Using Design-of-Experiments and Monte-Carlo Methods
D. Hansen, Data Device Corporation, USA
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Upset rates in low- and medium-earth orbits were calculated using CREME96 with design of experiments and Monte-Carlo methods. Calculations are compared to on-orbit data. Implications for data collection are discussed.
PB-5
Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices Under Heavy Ion Bombardment
J. McPherson, C. Hitchcock, T. Chow, W. Ji, Rensselaer Polytechnic Institute, USA, A. Woodworth, NASA Glenn Research Center, USA
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We investigate mesoplasma formation from heavy ion strikes in 4H-SiC power MOSFETs. Simulations involving the time evolution of several parameters have determined that the formation of a mesoplasma occurs within the device.
PB-6L
Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions
M. Takahashi, Y. Nakada, E. Mizuta, H. Shindou, J. Senzaki, A. Takeyama, T. Makino, T. Ohshima, and S. Kuboyama, Japan Aerospace Exploration Agency (JAEA), Japan
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The behavior of leakage current induced by heavy ions in SiC MOS capacitors was found to be quite different from that observed in corresponding capacitors on Si. The responsible mechanism was identified by detailed analysis. 
PC-1
Total Ionization Dose Effects on NAND Flash Memory Based Physical Unclonable Function
S. Sakib, B. Ray, The University of Alabama in Huntsville, Huntsville, AL, USA
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We investigate the total ionization dose (TID) effects on flash memory-based physically unclonable functions (PUFs). We find that flash-PUF accuracy degrades significantly with TID~10 krad. We proposed an electrical-annealing technique to improve the PUF accuracy.
PC-2
An Ionizing-Dose-Aware Behavioral Model of a Successive-Approximation Analog to Digital Converter
M. Rony, E. Zhang, M. Reaz, K. Li, R. Reed, J. Kauppila, A. Witulski, R. Schrimpf, Vanderbilt University, USA, B. Rax, A. Daniel, P. Adell, NASA-JPL, USA
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ADCs of different structures respond differently to Total Ionization Dose (TID). Dynamic gain and dynamic offset are the key parameters that are sensitive to TID in successive-approximation-register (SAR) ADCs.
PC-3
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
D. Soderstrom, University of Jyväskylä, Finland, L. Matana luza, L. Dilillo, LIRMM, France, H. Kettunen, A. Javanainen, RADEF, Finland, W. Farabolini, A. Coronetti, CERN, Switzerland, C. Poivey, ESA, Netherlands
 
This study investigates the response of SDRAMs to electron irradiation. Stuck bits, SEUs and memory cell degradation is presented in this paper, in a memory that will be part of the ESA JUICE mission.
PC-4
Investigating Heavy Ion Effects on 14 nm-Process FinFETs: Displacement Damage Versus Total Ionizing Dose
M. Esposito, J. Manuel, E. Bielejec, G. Vizkelethy, J. Dickerson, P. Kerber, M. King, A. Tali, D. Ashby, M. McLain, M. Marinella, Sandia National Laboratories, USA, A. Privat, H. Barnaby, J. Brunhaver, Arizona State University, USA

Heavy ion irradiation was examined on a commercial 14-nm n-type FinFET technology to investigate displacement damage and total ionizing dose effects. Low temperature measurements were conducted to reveal underlying physics.
PC-5
Gamma Ray Induced Error Pattern Analysis for MLC 3D-NAND
U. Surendranathan, B. Timothy, B. Ray, The University of Alabama in Huntsville, USA
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Data corruption rate on the shared pages of MLC 3-D NAND under Co-60 Gamma rays (20-krad) shows a unique correlated behavior. The error location within a given page remains uncorrelated.
PC-6
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
K. Li, E. Zhang, M. Gorchichko, P. Wang, S. Zhao, M. Alles, R. Reed, D. Fleetwood, R. Schrimpf, Vanderbilt University, USA, G. Hiblot, S. Huylenbroeck, A. Jourdain, IMEC, Belgium
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Total-ionizing-dose effects and low-frequency noise are evaluated in advanced bulk FinFETs with and without TSV via-last integration. The presence of the TSVs does not affect threshold voltage, Ion/Ioff, or noise.
PC-7
 Influence of Total Ionizing Dose on Magnetic Tunnel Junctions with Perpendicular Anisotropy
B. Zink, J. Wang, J., University of Minnesota, USA, Yang-Scharlotta, M. Han, NASA-JPL, USA, F. Mancoff, J. Sun, Everspin Technologies., USA
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Spin-transfer torque magnetic random-access memory (STT-MRAM) is a promising solution for onboard, radiation-tolerant memory. In this study, we examine the effect of TID exposure on the MTJ’s thermal stability and its critical switching voltage.
PC-8
Total Ionizing Dose Effects on Multi-state HfOx-based RRAM Synaptic Arrays
X. Han, A. Privat, K. Holbert, J. Seo, H. Barnaby, Arizona State University, USA, S. Yu, Georgia Institute of Technology, USA
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The impact of total ionizing dose on the multi-states of HfOx-based RRAM is investigated by irradiating the 1-transistor-1-resistor 64kb array with CMOS peripheral decoding circuitry fabricated at 90 nm node.
PC-9
Foundry Dependence of Total Ionizing Dose Effects of FinFET Transistor in 14-nm Technological Node
L. Artola, T. Chiarella, T. Nuns, G. Cussac, ONERA, France, J. Mitard, IMEC, Belgium
 
This work presents a new set of data of TID responses under Co60 irradiation. Process dependences of degraded transistor operating characteristics are quantified as a function of three different manufacturer lines of 14-nm FinFET technology.
PC-10
Comparison of TID-induced Degradation of Programmable Logic Timing in Bulk 28 nm and 16 nm FinFET System-on-Chips under Local X-ray Irradiation
I. Lopes, V. Pouget, F. Wrobel, A. Touboul, F. Saigné, J. Boch, T. Maraine, University of Montpellier 2, France, K. Roed, University of Oslo, Norway
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This paper presents the comparison of TID-induced timing degradation of two system-on-chip generations. The degradation was analyzed using local X-ray irradiation. Timing degradations for each technology were presented, compared and discussed.
PC-11L
Ionizing Radiation Effect in SONOS-based Neuromorphic Inference Accelerators
T. P. Xiao, C. H. Bennett, S. Agarwal, D. Hughart and M. Marinella, Sandia National Laboratories, USA; H. J. Barnaby, Arizona State University, USA, H. Puchner and V. Prabhakar, Infineon Memory Solutions - USA
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The sensitivity of SONOS-based neuromorphic inference accelerators to total ionizing dose is evaluated. An experimentally validated model is proposed for the radiation response of SONOS synapses, and inference accuracy is simulated up to 1000 krad(Si)
PC-12L
Pre-charge Optimization in Sidewall Spacer Memory Bit Cell with Respect to Total Ionizing Dose
T. Vincenzi and G. Schatzberger, AMS AG, Austria, A. Michalowska Forsyth, Graz University of Technology, Austria
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This paper analyses a charge-based Non-Volatile Memory device: the Sidewall Spacer. Multiple test-dies from a 55nm standard CMOS process are tested up to 500krad assessing data retention depending on charge injection in the nitride spacer.
PD-1
Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes
L. Ryder, K. Ryder, A. Sternberg, J. Kozub, E. Zhang, R. Weller, R. Schrimpf, S. Weiss, R. Reed, Vanderbilt University, USA, D. Linten, K. Croes, IMEC, Belgium
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The impact of device geometry on single event transient response of waveguide-integrated germanium photodiodes is examined using pulsed laser testing. Experimental results show vertical PIN diodes consistently exhibit shorter transient durations than lateral PIN diodes.
PD-2
Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers
X. Shan, Y. Sun, M. Xun, F. Zhao, B. Li, L. Wang, J. Gao, R. Gu, J. Luo, Z. Han, X. Liu, Key Laboratory of Silicon Device Technology and Institute of Microelectronics, Chinese Academy of Sciences, China, J. Liu, Institute of Modern Physics, Chinese Academy of Sciences, China, J. Wang, S. Wang, School of Physics, Peking University, China, Y. Xie, B. Wu, C. Xu, Beijing University of Technology, China
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The radiation effects of Ta ion on static and dynamic characteristics of VCSEL were studied. Light-output power and current-voltage degraded, but modulation-current efficiency factor increased. DBR reflectivity reduction and defects in QWs were radiation mechanisms.
PE-1
Updates on Testing Microprocessors Effectively
H. Quinn, Los Alamos National Laboratory, USA, K. Gnawali, S. Tragoudas, Southern Illinois University Carbondale, USA
 
Updates to the software benchmark for radiation testing mitigated software codes are presented. The updates include new memory testing algorithms, a new sorting algorithm, and an update to the standard matrix multiply code.
PE-2
Influence of Supply Voltage and Body Biasing on Single-Event Upsets and Single-Event Transients in UTBB FD-SOI
C. Lecat-Mathieu De Boissac, F. Abouzeid, V. Malherbe, G. Gasiot, P. Roche, STMicroelectronics, France, J. Autran, Aix-Marseille University, France
 
We present a study of single-event effects through supply voltage and body bias variations in 28 nm UTBB FD-SOI. Heavy ion experiments were performed, showing the variation of SEE sensitivity in both sequential and logic cells.
PE-3
Stuck-Bits Screening in a 512Mb SDRAM Induced by Proton and γ-Rays
S. Bounasser, C. Boatella Polo, T. Borel, C. Poivey, ESA, Netherlands
 
TID and Proton tests have been made in order to evaluate the SEU/SB/SEFI sensitivity of a 512Mb SDRAM. Roots-cause analysis of stuck-bits formation is discussed as well as the VRT phenomenon induced by proton irradiation.
PE-4
SMicrobeam Heavy Ion and Event Tree Analysis Investigating Single Event Effect Propagation in System-on-Chip
W. Yang, School of Nuclear Science and Technology, China and Politecnico di Torino, Italy, S. Azimi, B. Du, L. Sterpone, School of Nuclear Science and Technology, China, X. Du, Y. Li, C. He, S. Shuting, L. Cai, National Innovation Center of Radiation Application, China, G. Gant, Politecnico di Torino, Italy
 
This paper presents heavy ion induced SEE propagation on 28 nm System-on-Chip SRAM reconfigurable devices. Results obtained by microbeam radiation test show sensitivity location and cross-section for functional blocks such as ALU, user-registers, D-Cache and Peripherals.
PE-5
Developing Benchmarks for Radiation Testing of Microcontroller Arithmetic Units Using ATPG
K. Gnawali, S. Tragoudas, Southern Illinois University Carbondale, USA, H. Quinn, Los Alamos National Laboratories, USA
 
Reliability-focused benchmarks are used to test systems in harsh operating conditions. This paper proposes a mechanism to develop such benchmarks for radiation testing of microcontroller arithmetic and logical units using automatic test pattern generation (ATPG).
PE-6
Neutron-Induced Pulse Width Distribution of Logic Gates Characterized Using a Pulse Shrinking Chain Based Test Structure
N. Pande, S. Kumar, L. Everson, G. Park, I. Ahmed, C. Kim, University of Minnesota, USA
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This work presents measured data corresponding to neutron-induced pulse width distributions for standard logic gate types together with detailed analysis on the range of design choices impacting the former.
PE-7
Comparison of Low-Energy Proton-Induced Single-Event-Upsets in 7-nm and 14-/16-nm FinFET Flip-Flops
N. Ogden, A. Feeley-Lamb, Y. Xiong, B. Sierawski, R. Reed, B. Bhuva, J. Maharrey, R. Harrington, T. Haeffner, K. Warren, M. McCurdy, M. Howell, J. Kauppila, L. Massengill, Vanderbilt University, USA
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Low-energy proton-induced upset data are presented for 7-nm and 14-/16-nm FinFET flip-flop shift-registers. The 7-nm flip-flop upset cross-section was less pronounced than 14-/16-nm, but larger at higher energies.
PE-8
Evaluating the Impact of Reducing Data Precision on the Reliability of Neural Networks on FPGAs
F. Libano, J. Brunhaver, Arizona State University, USA, P. Rech, Universidade Federal do Rio Grande do Sul, Brazil and  Los Alamos National Laboratory, USA, B. Neuman, Los Alamos National Laboratory, USA, J. Leavitt, M. Wirthlin, Brigham Young University, USA
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Through neutron beam experiments, we analyze how precision reduction of neural networks on FPGAs can effectively deliver lower radiation sensitivity, while maintaining high accuracy levels. We compare 32-bit to 16-bit floating-point and 8-bit integer implementations.
PE-9L
Heavy Ions Radiation Effects on 4kb Phase-Change Memory
A. L. Serra, G. Bourgeois, M. C. Cyrille, C. Charpin-Nicolle, G. Navarro and E. Nowak, CEA-LETI-MINATECH, France, T. Vogel, S. Petzold, N. Kaiser, L. Alff, Advanced Thin Film Technology, University of Darmstadt, Germany, G. Lefevre, C. Vallée and D. Sylvain, CNRS-LTM Laboratoire des Technologies de la Microelectronique, France, C. Trautmann, Material Research Department, Darmstadt GSI, Germany
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In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on Ge2Sb2Te5 and Ge-rich GeSbTe based Phase-Change Memory (PCM).
PF-1
Neutron Environment at High-Altitude High-Performance Computing Facilities
S. Nowicki, E. Mullin, L. Ferres, S. Blanchard, N. Debardeleben, S. Wender, G. McMath, G. McKinney, Los Alamos National Laboratory, USA
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Cosmic-ray induced neutrons can have large effects on computing systems when they interact with the electronics. In an effort to monitor the neutron environment in the LANL high-performance computing facility, we have deployed neutron detectors.
PF-2
Hybrid Shielding Configuration for Sensitive Space Electronics Subjected to Extreme Space Weather
R. Pal Chowdhury, L. Stegeman, A. Bahadori, Kansas State University, USA, M. Lund, University of Utah, USA, D. Fry, NASA-Johnson, USA, S. Madzunkov, NASA-JPL, USA
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In this study, a novel hybrid radiation shielding configuration is proposed. The efficacy of this configuration in terms of protecting space-based electronics against extreme solar weather and the reduction of mass-penalty is analyzed
PF-3
The Compact Environmental Anomaly Sensor Risk Reduction (CEASE-RR): On-Orbit Measurements
C. Lindstrom, D. Barton, E. Friedman, Air Force Research Laboratory, USA, K. Greene, University of New Mexico (COSMIAC), USA
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CEASE RR is a new compact sensor designed for anomaly attribution due to the space radiation environment launched in April 2018.  Cross-comparison campaigns with GOES are presented, and inner Van Allen belt measurements during ascent.
PF-4
Jason-2 Measurements Compared with AP9 (v. 1.50.001) & AP8
C. Lindstrom, A. Andersen, J. Insoo, NASA-JPL USA
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AP9 (also known as IRENE) version 1.50.001 is compared to Jason-2 measurements. It is shown that the measurements are in better agreement than previous comparisons with version 1.20 of the AP9 model.
PG-1
Characterization of a Certified Exposure Facility for Total Ionizing Dose Testing of Electronic Components
C. Tscherne, M. Wind, M. Latocha, P. Beck, Seibersdorf Laboratories, Austria
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We characterize the Co-60 field of the TEC-Laboratory Seibersdorf, a certified TID testing facility. We investigate the dose effects of low-energy backscatter photons from the concrete walls with and without the use of lead boxes.
PG-2
Study of SEU sensitivity of SRAM-Based Radiation Monitors in 65 nm CMOS
J. Wang, J. Prinzie, KU Leuven, Belgium, A. Coronetti, CERN, Switzerland, P. Leroux, Leuven University, Belgium
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A flexible SRAM based SEU radiation monitor has been designed, simulated and tested with heavy ions and protons. Its SEU sensitivity can be tuned by varying the cells’ supply voltage.
PG-3
Dosimetry of Thermal Neutron Beamlines at a Pulsed Spallation Source for Application to the Irradiation of Microelectronics
C. Cazzaniga, D. Raspino, J. Sykora, C. Frost, STFC, United Kingdom
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Activation foils and a GEM detector, with time of flight technique, are used for dosimetry of thermal beamlines of a pulsed neutron source. These can be applied to the irradiation of microelectronics for SEE testing.
PG-4
Investigations on Spectral Photon Radiation Sources to Perform TID experiments in Micro- and Nano-Electronic Devices
M. Gaillardin, D. Lambert, D. Aubert, M. Raine, C. Marcandella, G. Assaillit, G. Auriel, M. Martinez, O. Duhamel, M. Ribière, N. Rostand, T. Lagutère, P. Paillet, N. Richard, C. Delbos, D. Poujols, S. Ritter, CEA, France
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The TID sensitivity of mature and innovative technologies is investigated using both ionizing radiation experiments and Monte-Carlo simulations to discuss the potential of spectral photon radiation sources as an alternative for radiation effects studies.
PH-1
In-Situ Testing Methods for Mixed-Mode Harsh Environments
L. Scheick, T. Dennis, S. Woo, W. Kim, S. Dawson, N. Low, A. Boca, E. Martin, J. Chinn, J. Foster, R. Davies, NASA-JPL, USA
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This paper describes JPL’s Dynamitron capabilities and recent modernization. Recent results are presented including solar cells, Internal Electrostatic Discharge (IESD), parts dose effects and system level assurance in extreme radiation and temperature environments.
PH-2
Identifying Radiation-Induced Micro-SEFIs in SRAM FPGAs
A. Perez-Celis, C. Thurlow, M. Wirthlin, Brigham Young University, USA
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This paper presents a method to identify micro-single event functional interrupts from beam-test data in the configuration memory and BRAM of SRAM-based FPGAs. The results show the cross-section of these events for three SRAM FPGAs.
PH-3
TID Effects Evaluation Induced by Photon Sources in MOS Devices: Impact of Sensitive Volume Thickness and BEOL Layers
D. Lambert, M. Gaillardin, M. Raine, P. Paillet, O. Duhamel, C. Marcandella, M. Martinez, N. Rostand, T. Lagutere, D. Aubert, G. Assaillit, C. Delbos, CEA, France
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TID effects induced by different photons sources are studied in MOS devices. Monte-Carlo modeling is performed to estimate energy depositions in sensitive volume behind device shielding and packaging. An effective TID approach is proposed.
PH-4
Single-Event Transient Case Study for System-Level Radiation Effects Analysis
M. Campola, R. Ladbury, R. Austin, NASA GSFC, USA, E. Wilcox, J. Pellish, NASA, USA, H. Kim, K. LaBel, Science Systems Applications, Inc., USA
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Analog single-event transient results are analyzed for two applications with a system architecture in mind. Application-specific analyses are presented on the MAX4595 commercial device using single-event effects criticality and goal structuring notation.
PH-5
A Comprehensive Comparison Between Design for Testability Techniques for Total Dose Testing of Flash-Based FPGAs
A. Ibrahim, M. Abdelwahab, A. Mohamed, N. Soliman, A. Abou-Auf, American University in Cairo, Egypt, M. Abdel-Aziz, Cairo University, Egypt
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We compare several design-for-testability techniques to generate worst-case test vectors for delay failure induced by total dose in sequential FPGAs. The comparison was validated experimentally using Microsemi ProASiC3 FPGA’s and Cobalt 60 facility.
PH-6
Analysis of System Level TID Test Results of a System in Package Point of Load Converter
T. Rajkowski, P. Kohler, P. Dubus, P. Wang, 3D-Plus, France, F. Saigné, K. Niskanen, J. Boch, T. Maraine, A. Touboul, University of Montpellier 2, France
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Test at system level is evaluated by measuring the sensitivity of point-of-load converter parameters, exposed to total ionizing dose irradiations, at both system and component levels.
PH-7L
Modeling COTS System TID Response with Monte Carlo Sampling and Transistor Swapping Experiments
M.B. Smith, A.F. Witulski, J.S. Kauppila, A.L. Sternberg, K.L. Ryder, N. Mahadevan, and R.D. Schrimpf, Vanderbilt University, USA
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Modeling the TID response of COTS systems is difficult due to each part’s parameters distributions. This work predicts the system-level output modeled with a small population of parts, which are used for experimental verification
PI-1
Evaluating Architectural, Redundancy, and Implementation Strategies for Radiation Hardening of Integrated Circuits
S. Pagliarini, TalTech, Estonia, L. Benites, F. Lima Kastensmidt, UFRGS, Brazil, M. Martins, Mentor Graphics, USA, P. Rech, LANL/UFRGS, USA
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Nine variants of matrix multiplication were taped-out in 16nm FinFET silicon and irradiated with neutrons. Simulation-based fault injection was utilized to validate measurements and to explore the effects of different implementation strategies on failure rates.
PI-2
Linux TMR RISC-V Soft-core Fault Injection and Neutron Radiation Tests
A. Wilson, C. Thurlow, S. Larsen, M. Wirthlin, Brigham Young University, USA
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The fault injection and neutron radiation results of a TMR RISC-V soft processor running Linux showed a 10× improvement in SEU reliability with a cost of around 4× resource utilization.
PI-3
Voltage-Controlled Oscillator Utilizing an Inverse-Mode SiGe-HBT Biasing Circuit for SET Mitigation
I. Song, J. Meang, Oklahoma State University, USA, A. Khachatrian, S. Buchner, D. McMorrow, Naval Research Laboratory, USA, P. Paki, DTRA, USA, M. Cho, J. Cressler, Georgia Institute of Technology, USA

A VCO using inverse-mode SiGe HBTs is proposed. A through-wafer two-photon absorption pulsed-laser experiment was conducted. The proposed VCO exhibited mitigated SET response.
PI-4
A Self-Compensated Preamplifier Providing Linear Output up to 0.6 Mrad of Total Ionizing Dose Based on Miller Capacitor Compensation
C. Lee, G. Cho, Korea Advanced Institute of Science and Technology, Republic of Korea, I. Kwon, Korea Atomic Energy Research Institute, Republic of Korea

A preamplifier for robustness to TID is presented. This circuit provides less amplitude and SNR degradation. It is operated by monitoring on amplitude of a replicated preamplifier and compensating gain bandwidth product with Miller capacitors
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