2020_Radiation Effects Data Workshop

Radiation Effects Data Workshop

Monday, December 7, 2020
All times Eastern Standard Time

RADIATION EFFECTS DATA WORKSHOP
10:00 AM - 12:30 PM

LIVE QUESTION AND ANSWER SESSION
Chair: Farokh Irom, Jet Propulsion Laboratory

DW-1

Single Event Effect Evaluation of the Jetson AGX Xavier Module Using Proton Irradiation
D. Hiemstra, MDA., Canada, C. Jin, Z. Li, S. Shi, L. Chen, University of Saskatchewan, Canada, R. Chen, National Space Science Center, Chinese Academy of Sciences., China

The single event effect cross-sections in different running modes of a Jetson AGX Xavier GPU module were evaluated using proton beams. The results show that the error rate can be reduced with redundancy techniques.

DW-2

Total Dose and SEE Test of Intel Movidius Myriad2 VPU and First Flight Data.
G. Furano, A. Tavoularis, ESA/TEC-EDD, Netherlands, J. Byrne, D. Moloney, Intel, Ireland, D. Buckley, L. Buckley, Ubotica Technology LTD, Ireland, M. Psarakis, University of Piraeu, Greece G. Meoni5L. Fanucci, University of Pisa, Italy

In this paper we will present the TID and SEE result of 5 sessions of 60Co, proton, Heavy Ion tests performed on Intel Movidius Myriad2 VPU and its in orbit performance data on PhiSat-1 Cubesat.

DW-3

Impact of Beam Collimation for Single Event Effects Testing Using a Clinical Proton Delivery System
J. Younkin, H. Stuckey, J. Shen, J. Stoker, D. Robertson, Mayo Clinic Arizona, USA, J. Bird, Radiation Test Solutions, Inc., USA

Collimators used in proton SEE testing impact the beam energy profile. These impacts have been modeled using TOPAS/Geant4 and verified with measurements. The TID, TNID, fluence, and uniformity impacts to electronics under test are discussed.

DW-4

In-Situ Measurement of the Effect of 1-MeV Electrons Irradiation on III-V/Si at LILT Conditions
K. Medjoubi, R. Cariou, L. Vauche, C. Jan, C. Rostaing, V. Amalbert, F. Chabuel, B. Boizot, CEA, France

In this study, we investigate the potential of III-V/Si solar cell technology for space applications. We present here the experimental results before and after 1 MeV electrons irradiation at NIRT and LILT conditions.

DW-5

Total Dose Performance at High and Low Dose Rate of Switching Regulators
D. Hiemstra, V. Kirischian, MDA, Canada, S. Shi, L. Chen, University of Saskatchewan, Canada

Results of Cobalt-60 irradiation of switching regulators at high and low dose rates are presented. Performance in the space radiation environment is discussed.

DW-6

Single Event Upset Results from the Radiation Hardened Electronic Memory Experiment in a Polar Orbit
D. Alexander, University of New Mexico (COSMIAC), USA, A. Vera, Ideas Tek, USA

Results are presented from the Radiation Hardened Electronic Memory Experiment (RHEME-2) performed on the STPSat-5 mission in a polar orbit.

DW-7

SEE and TID Test Results Compilation for Candidate Spacecraft Electronics
A. Kalashnikova, T. Maksimenko, M. Kuznetsov, M. Vyrostkov, R. Mangushev, A. Drokin, A. Nilov, N. Bondarenko, K. Bukhasan, A. Malova, A. Kukharev, A. Koziukov, Branch of JSC URSC - ISDE, Russian Federation

The results of the single effect events and total ionizing dose testing of VCOs, amplifiers, regulators and DC/DC converters are presented. We obtained SOA, LET thresholds and TID for SEL and destructive failure.
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DW-8

A Novel Facility for Accelerated System Level Radiation Effects Testing Using a High-Flux Neutron Generator
W. Goodman, K. Rittenhouse, L. Jacobson, Phoenix LLC, USA

A new neutron source for accelerated testing of electronic components and systems has been built and modeled neutron flux has been measured. Neutron irradiation of a rack mount power supply has been performed.

DW-9

TID Sensor Based on a Bipolar Transistor
A. Bakerenkov, V. Pershenkov, V. Felitsyn, A. Rodin, V. Telets, V. Belyakov, A. Zhukov, N. Glukhov, National Research Nuclear University MEPhI, Russian Federation

The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.

DW-10

Heavy Ion-Induced SEE and 60Co TID Effects Testing on Commercial Logic Devices
P. Kohler, T. Rajkowski, P. Wang, 3D PLUS, France, F. Saigné, University of Montpellier 2, France, A. Sanchez, VPT Rad, USA, L. Buybusque, L. Gouyet, TRAD, France

This paper presents the investigation of heavy-ion induced Single-Event Effects, and gamma ray induced Total Ionizing Dose effect on commercial logic devices including buffers and transceivers.

DW-11

SET Results of the Intersil ISL7202xSEH CAN Transceivers in a Two Node Bus System
W. Newman, N. van Vonno, A. Robinson, L. Pearce, O. Mansilla, E. Thomson, Renesas Electronics America, USA

We report the results of SET testing of a two-node Intersil CAN Bus system. Based on those results, CRÈME96 provided an estimated system error rate in a geosynchronous orbit and a typical low earth orbit.

DW-12

Proton-Induced Output Clock SEU and SEFI Characterization of the ADC12D1620 12-Bit Analog-to-Digital Converter
R. Dungan, E. Nakamura, T. Tran, J. Myer, J. Parker, F. Suela, Northrop Grumman, USA

Proton-induced SEE results are reported for the ADC12D1620. Output clock SEU cross sections were measured over a range of proton energies. No SEFI events were observed at 250 MeV to a fluence of 2.0×1011 p/cm^2.

DW-13

Updated Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission
S. Zajac, A. Bozovich, B. Rax, J. Davila, D. Nguyen, W. Parker, A. Kenna, S. McClure, J. Thomas, K. Stanford, M. Sundgaard, NASA-JPL, USA

We present the results of total ionizing dose testing and analysis on electric, electronic, and electromechanical (EEE) parts, tested by the Jet Propulsion Laboratory in support of the Europa Clipper Mission.

DW-14

SEL and TID Characterization of a Cobham SONOS Nonvolatile Memory
M. Von Thun, D. Bass, R. Dimitru, R. Anderson, J. Benthem, A. Turnbull, Cobham, USA

A Cobham SONOS based NOR Flash non-volatile memory has been designed, manufactured, and characterized for radiation effects. The radiation effects results will be presented.

DW-15

Single Event Effects Characterization of Microchip Programmable Current Limiting Power Switch LX7712
M. Leuenberger, M. Sureau, R. Stevens, N. Rezzak, D. Johnson, Microchip Technology, USA

The heavy ions single event effect characterization results of Microchip Technology’s radiation hardened programmable current limiting power switch IC, the LX7712, are presented. The data shown are based on single event testing campaign of November 2019.

DW-16

Single Event Transients Detection in AD844 Operational Amplifier by Utilizing Ultra-fast Pulsed Laser System
C. Gu, L. Chen, University of Saskatchewan, Canada, D. Hiemstra, V. Kirischian, MDA Corporation, Canada

Single event transients have been observed in five regions of interest of AD844 operational amplifiers by utilizing an ultra-fast laser with three different energy levels through two photon absorption. A SET detecting system is also described.

DW-17

Single-Event Effects Test Results of the Intersil ISL73141SEH Precision SAR ADC
J. Harris, N. van Vonno, L. Pearce, E. Thomson, Renesas Electronics America, USA

We report the results of destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL73141SEH 14-bit 750/1000ksps precision SAR ADC.

DW-18

Impact of Low-Energy Proton (10 MeV) Sensitivity to SEU on Microcontroller and Microprocessor Performance in Low-Earth Orbit
S. Damkjar, I. Mann, D. Elliott, University of Alberta, Canada

Proton beam testing was performed on several devices. Some showed high SEU sensitivity to low energy protons while others did not. Consequences of this low energy peak on performance and mitigation by shielding are investigated.

DW-19

Single Event Latch-up and Total Ionizing Dose Characterization of a Cobham Designed Smart Power Switch Controller
M. Von Thun, Y. Lotfi, T. Meade, A. Turnbull, Cobham, USA

Single event latch-up and total ionizing dose characterization data will be presented for the newly designed and fabricated Cobham radiation-hardened Smart Power Switch Controller.

DW-20

Single-Event Effects Testing of the Renesas ISL70005SEH Dual Output Point-of-Load Regulator
N. van Vonno, O. Mansilla, J. Gill, F. Ballou, W. Newman, E. Thomson, L. Pearce, Renesas Electronics America, USA, H. Satterfield, Retired

We report SEE testing results of the Renesas ISL70005SEH point-of-load regulator, which includes a synchronous buck and low dropout regulator in a single IC. We also provide a brief functional description of the part.

DW-21

Investigation of Application-Specific Bias Conditions and Dose Rate Dependence in Total Ionizing Dose (TID) Response
A. Bozovich, D. Nguyen, J. Davila, S. Zajac, NASA-JPL, USA

This paper investigates flight circuit application bias and irradiation dose rate dependencies (“test as you fly” conditions) in the total ionizing dose response of various electronic components considered for use in a space radiation environment.

DW-22

The Aerospace Corporation’s Compendium of Recent Radiation Effect Results
S. Davis, D. Mabry, A. Yarbrough, R. Koga, C. Roske, K. MacGowan, V. Hunt, A. Wright, J. Taggart, C. Langford, The Aerospace Corporation, USA

Single event effects and total ionizing dose testing was performed on several commercial components to determine the response of these components to the space radiation environment. Testing used heavy ions, protons, and gamma rays.

DW-23

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results
A. Topper, M. Berg, E. Wyrwas, J. Forney, H. Kim, J. Osheroff, A. Phan, D. Cochran, M. Obryan, Science Systems Applications, Inc., USA, J. Lauenstein, M. Campol, T. Carstens, NASA GSFC, USA, M. Casey, E. Wilcox, J. Pellish, P. Majewicz, C. Fedele, NASA, USA, M. Chaiken, NASA GRC, USA

Total ionizing dose, displacement damage dose, and single-event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, optoelectronics, and bipolar devices.

DW-24

SEU Characterization of Commercial and Custom-designed SRAMs based on 65 nm Technology and Below
A. Coronetti, M. Cecchetto, Fernandez Martinez, A. Papadopoulou, K. Bilko, R. Garcia Alia, CERN, Switzerland, J. Wang, KU Leuven, Belgium, M. Tali, Ampyx Power, Netherlands, P. M. Kastriotou, C. Cazzaniga, STFC, United Kingdom, F. Castellani, ISAE Supaero, France

The R2E group at CERN has tested a few SRAMs whose data are complementary to various scientific publications. The experimental data include low and high energy protons, heavy ions and more.

DW-25

Single Event Latchup Results for COTS Devices Used on SmallSat Missions
S. Vartanian, G. Allen, F. Irom, W. Parker, M. D. Conner, NASA-JPL, USA

We present single event latchup (SEL) results for a variety of microelectronic devices frequently designated for SmallSat missions. The data presented is only a small representation of all the SEL tests performed in 2019

DW-26

Ultra-High Total Ionizing Dose Effects in a Highly-Integrated and RF-Agile Transceiver
J. Budroweit, J. Mattis, DLR, Germany, G. Borghello, European Organization for Nuclear Research, Switzerland

Characterization of TID effects on a highly-integrated RF-agile transceiver to ultra-high dose levels. The DUT shows no degradation up to 40 Mrad(SiO2). Beyond 45 Mrad(SiO2), malfunctions and annealing effects are observed.

DW-27

Energy-Dependent Single-Event Effects in Power MOSFETs from a Broad-Spectrum Neutron Beam
J. Pritts, S. Wender, J. George, T. Fairbanks, J. O. Donnell, Los Alamos National Laboratory, USA

We present an approach for extracting energy-dependent cross sections from broad-spectrum pulsed neutron beams using time-of-flight measurements. Data for destructive single-event burnout in several n-channel power MOSFET devices are presented.

DW-28

Total Dose Testing of the ISL70061SEH and ISL70062SEH PMOS and NMOS Load Switches
N. van Vonno, L. Pearce, D. Turner, W. Newman, Renesas Electronics America, USA

We report the results of low and high dose rate total ionizing dose testing of the Renesas ISL70061SEH and ISL70062SEH PMOS and NMOS load switches together with a brief functional description of the parts.

DW-29

Radiation Test Results for ISSI 1 Gb DDR2
S. Guertin, A. Daniel, W. Parker, N. Duc, D. Sam, NASA-JPL, USA

ISSI IS46DR16640B and IS46DR81280B DDR2 1Gb devices are studied for radiation effects. TID and SEE results are provided. Key results are presented for SEFI, stuck bits, and TID performance.

DW-30

Single Event Effects in Power MOSFETs with Mono-energetic Neutron Beams
J. George, J. Pritts, T. Fairbanks, S. Wender, E. Auden, H. Quinn, Los Alamos National Laboratory, USA

Neutron-induced single event burnout cross sections for n-channel power MOSFET devices using mono-energetic neutron beams are presented. Advantages and challenges for destructive single event effects testing with these beams are also discussed.

DW-31

Trends in Measured SEL Sensitivity with Increasing Proton Induced Total Ionizing Dose to 1 Mrad(Si) on Zynq UltraScale Plus XCZU9EG FPGA
R. Koga, S. Davis, D. Mabry, The Aerospace Corporation, USA

Experimental observation of the trend in SEL sensitivity was made for increasing proton induced TID/DD. The test samples were the Zynq UltraScale Plus XCZU9EG FPGAs. The cumulative TID on one sample was near 1 Mrad(Si).

DW-32

Guide to the 2019 IEEE Radiation Effects Data Workshop Record
D. Hiemstra, MDA, Canada

The 2019 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.

DW-33

Total Ionizing Dose and Single Event Effects Characterization of Texas Instruments LMX2615-SP 40 MHz to 15 GHz Wideband Synthesizer with Phase Synchronization and JESD204B Support
K. Kruckmeyer, H. Castro, T. Thang, A. Black, Texas Instruments, USA

The LMX2615-SP is a frequency synthesizer (clock) with integrated PLL and VCO that can generate frequencies up to 15 GHz. TID, ELDRS, SEL, SEFI and SEU test data are presented.

DW-34

Total Ionizing Dose Test Results of Texas Instruments LMK04832-SP 3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs
K. Kruckmeyer, H. Castro, T. Trinh, A. Black, Texas Instruments, USA

The LMK04832-SP is a radiation hardened JESD24B compliant clock conditioner with integrated VCOs that can provide clock signals up to 3.2 GHz on up to 14 outputs. TID test data are presented.

DW-35L

Proton Characterization for a Dual 12bits 1.5Gsps Analog to Digital Converter Dedicated up to S-Band Domain
O. Bonnet, R. Pilard, E. Savasta, J. Palmigiani and V. Hibon, Teledyne E2, France

Here are the results of a proton test which has been done on the Dual 12bits 1.5Gsps Analog to Digital Converter to validate the previous Proton estimation made with PROFIT with heavy ions results.

DW-36L

Neutron Radiation Failure-in-time Test of 1200V and 1700V SiC Power Transistors
Moinuddin Ahmed, Christopher Stankus, Angel Yanguas-Gil, John Hryn, Stephen A. Wender, and Kranti Gunthoti, Los Alamos National Laboratory, USA

Accelerated neutron radiation failure-in-time test (sea-level height) was performed on 144 SiC power transistors from 3 different manufacturers. A maximum FIT of 8 and 28 were measured for 1200V and 1700V devices respectively.

DW-37L

RRecent Single Event Transients, Upsets, and Latchup Test Results for TPS3307-18, TL1431, INA129, AM26LV31 & 32 Electronic Parts
Joel Hatch, The Ohio State University Nuclear Reactor Laboratory, USA, Brittany Butterworth, L3 Cincinnati Electronics Corporation, USA

Automotive grade parts provide a commercial “off- the-shelf” (COTS) active electronic part alternative for application in satellite and launch vehicles. The results of heavy ion induced Single Event Effects (SEE) measured in various automotive parts are put forth for examination