2020_Session A

Session A - BASIC MECHANISMS

Tuesday, December 1, 2020
All Times Eastern Standard Time

SESSION A
10:40 AM - 12:20 PM
Room 1

BASIC MECHANISMS
SESSION INTRODUCTION
Chair: Philippe Paillet, CEA

A-1

Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65 nm CMOS Transistors
G. Borghello, F. Faccio, G. Termo, S. Costanzo, H. Koch, CERN, Switzerland, D. Fleetwood, Vanderbilt University, USA

The true dose-rate sensitivity of 65 nm CMOS transistors is evaluated at different temperatures and applied biases. The increased sensitivity is more evident in short-channel transistors and is primarily attributable to spacer-related effects.

A-2

Heavy-ion-induced Displacement Damage Effects in Magnetic Tunnel Junctions with Perpendicular Anisotropy
T. Xiao, C. Bennett, J. Manuel, D. Hughart, R. Jacobs-Gedrim, E. Bielejec, G. Vizkelethy, S. Agarwal, R. Arghavani, M. Marinella, Sandia National Laboratories, USA, F. Mancoff, J. Sun,, Everspin Technologies, USA

The resilience of MgO-based perpendicular-anisotropy magnetic tunnel junctions to heavy-ion induced displacement damage is evaluated. Insensitivity to fluences up to 1x1011 ions/cm2 is demonstrated, and physical mechanisms are proposed to explain the observed degradation.

A-3

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator
X. Gao, Q. Looker, B. Ulmen, L. Musson, T. Webb, A. McCourt, S. Coffey, Sandia National Laboratories, USA

We present TCAD simulation and modeling of silicon X-ray detectors. Simulations not only reproduce DC characteristics and time-dependent dose-rate responses, but also predict new behavior at high dose rates, providing in-depth physics understanding and guidance.

Tuesday, December 8, 2020

10:00 AM - 1:00 PM

POSTER SESSION
Chair: Andrew Sternberg, Vanderbilt University

PA-1

LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)
J. Osheroff, Science Systems Applications, Inc., USA, J. Lauenstein, R. Ladbury, NASA GSFC, USA

A better understanding of the linear energy transfer and range of proton recoil ions in gallium nitride (GaN) is provided to facilitate proper evaluation of GaN device radiation tolerance.

PA-2

Impact of Total Ionizing Dose on Analog Synaptic Characteristics of CBRAM
P. Apsangi, H. Barnaby, N. Chamele, Y. Gonzalez-Velo, K. Holbert, M. Kozicki, Arizona State University, USA

The changes caused by total ionizing dose in the conductance and linearity of analog CBRAM synapses are studied. FESEM imaging supports the conclusion that changes in conductance are due to loss of filament contact after irradiation.

PA-3

Laser and Heavy Ion Irradiation Effects on Advanced Perpendicular Anisotropy Spin Transfer-Torque Magnetic Tunnel Junctions
O. Coi, G. Di Pendina, E. Gautier, CEA, France, N. Andrianjohany, N. Chatry, TRAD, France, K. Gaarello, IMEC, Belgium, R. Ecoffet, D. Dangla, CNES, France, L. Torres, LIRMM-University of Montpellier 2, CNRS, France

This paper investigates laser and heavy ion radiation effects on perpendicular-anisotropy spin transfer-torque magnetic tunnel junction devices and film stacks.

PA-4

Mapping Radiation Damage in Integrated Circuits Using Single Photon Absorption Charge Injection
E. Auden, Los Alamos National Laboratory, USA, J. Gutierrez, Northeastern University, USA, K. Gnawali, Southern Illinois University Carbondale, USA

Laser-induced single photon absorption charge injection is used to map damaged transistors in integrated circuits irradiated with gamma rays or neutrons. Radiation damage suppresses the charge injection response, resulting in darkened areas in laser scans.

PA-5

Simplified Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors
H. Hjalmarson, T. Buchheit, Sandia National Laboratories, USA, H. Barnaby, Arizona State University, USA, P. Adell, NASA-JPL, USA, S. Witczak, Northrop Grumman, USA

A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.