2020_Session B

Session B - SINGLE EVENT EFFECTS: MECHANISMS & MODELING

Tuesday, December 1, 2020
All times Eastern Standard Time

SESSION B
10:40 AM - 12:20 PM
Room 2

SINGLE EVENT EFFECTS: MECHANISMS AND MODELING
SESSION INTRODUCTION
Chair: Philippe Roche, STMicroelectronics

B-1

TIARA: Industrial Platform for Monte Carlo Single Event Simulations in Planar Bulk, FD-SOI and FinFET
T. Thery, G. Gasiot, V. Malherbe, P. Roche, STMicroelectronics, France, J. Autran, Aix-Marseille University, France

We present a Monte Carlo SER simulator for CMOS cells under terrestrial and space environments, illustrated by three use cases: flip-flop comparison in FD-SOI, MCU evaluation in planar bulk, and alpha/neutron simulations in FinFET.

B-2

Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs
K. Muthuseenu, H. Barnaby, A. Privat, Arizona State University, USA, K. Galloway, Vanderbilt University, USA, T. Maksimenko, V. Anashin, K. Bukhasan, A. Kalashnikova, A. Koziukov, Branch of JSC URSC - ISDE, Russian Federation

Experimental results show that super-junction silicon power MOSFETs have better tolerance to SEGR than VDMOS devices for angular heavy ion strikes. TCAD analysis is used to understand the improved SEGR tolerance in SJ devices.

B-3

Mapping the Spatial Dependence of Charge Collection Efficiency in Devices Using Pulsed-Laser Testing
J. Hales, A. Khachatrian, S. Buchner, D. McMorrow, Naval Research Laboratory, USA, D. Monahan, S. LaLumondiere, The Aerospace Corporation, USA

By scanning the charge deposition profile produced by a pulsed laser throughout a device, the spatially-dependent charge collection efficiency can be determined. This is demonstrated by extracting the depth-dependent charge collection efficiency in two photodiodes.

B-4

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Deposition
K. Ryder, L. Ryder, A. Sternberg, J. Kozub, E. Zhang, R. Weller, R. Schrimpf, S. Weiss, R. Reed, Vanderbilt University, USA, S. LaLumondiere, The Aerospace Corporation, USA, A. Khachatrian, S. Buchner, D. McMorrow, Naval Research Laboratory, USA, J. Hales, KeyW Corporation, USA, Y. Zhao, L. Wang, C. Wang, Beijing Microelectronics Technology Institute, China

Heavy ion, focused x-ray, and pulsed laser SET experiments are performed on a Si diode and SET shape characteristics are compared between the different methods. It is shown that test method impacts SET shape characteristics.

B-5

Laser-Induced Transients in SiGe HBTs Generated via Two-Photon Absorption Using Gaussian and Quasi-Bessel Beams
A. Ildefonso, G. Tzintzarov, D. Nergui, A. Omprakash, J. Cressler, Georgia Institute of Technology, USA, J. Hales, KeyW Corporation, USA, A. Khachatrian, S. Buchner, D. McMorrow, Naval Research Laboratory, USA

A comparison of laser-induced single-event transients in SiGe HBTs generated via two-photon absorption using Gaussian and quasi-Bessel beams is presented. Laser and ion data are compared. TCAD simulations are used to explain the differences observed.

Tuesday, December 8, 2020

10:00 AM - 1:00 PM

POSTER SESSION
Chair: Andrew Sternberg, Vanderbilt University

PB-1

Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha-Particles
T. Kato, H. Matsuyama, Socionext, Inc., Japan, M. Tampo, S. Takeshita, Y. Miyake, High Energy Accelerator Research Organization, Japan, H. Tanaka, Kyoto University, Japan, M. Hashimoto, Osaka University, Japan

Negative and positive muon-induced single-event upsets are studied in 20-nm planar SRAMs. Results from muon irradiation are compared with results from high-energy and thermal neutrons and alpha particle irradiation. The underlying mechanisms are discussed.

PB-2

An Investigation of SET Charge Transport Mechanisms in SiGe HBTs
D. Nergui, A. Ildefonso, G. Tzintzarov, A. Omprakash, J. Cressler, Georgia Institute of Technology, USA

IA fully calibrated 3-D TCAD model is used to investigate charge transport mechanisms during heavy-ion-induced single-event transients in SiGe HBTs.

PB-3

Impact of SiC VD-MOSFET Technology on Terrestrial Neutron Reliability
C. Martinella, R. Garcia Alia, A. Coronetti, Y. Kadi, CERN, Switzerland, R. Stark, U. Grossner, APS - ETH Zurich, Switzerland, C. Cazzaniga, M. Kastriotou, STFC, United Kingdom, A. Javanainen, RADEF, Finland

Commercial SiC power MOSFETs were exposed to terrestrial neutron irradiations. The breakdown voltage degradation and the impact of the SEGR in planar and trench gate design are discussed, highlighting the differences between device technologies.

PB-4

Low and Medium Earth-Orbit Rates Using Design-of-Experiments and Monte-Carlo Methods
D. Hansen, Data Device Corporation, USA

Upset rates in low- and medium-earth orbits were calculated using CREME96 with design of experiments and Monte-Carlo methods. Calculations are compared to on-orbit data. Implications for data collection are discussed.

PB-5

Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices Under Heavy Ion Bombardment
J. McPherson, C. Hitchcock, T. Chow, W. Ji, Rensselaer Polytechnic Institute, USA, A. Woodworth, NASA Glenn Research Center, USA

We investigate mesoplasma formation from heavy ion strikes in 4H-SiC power MOSFETs. Simulations involving the time evolution of several parameters have determined that the formation of a mesoplasma occurs within the device.

PB-6L

Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions
M. Takahashi, Y. Nakada, E. Mizuta, H. Shindou, J. Senzaki, A. Takeyama, T. Makino, T. Ohshima, and S. Kuboyama, Japan Aerospace Exploration Agency (JAEA), Japan

The behavior of leakage current induced by heavy ions in SiC MOS capacitors was found to be quite different from that observed in corresponding capacitors on Si. The responsible mechanism was identified by detailed analysis.