2020_Session D

Session D - PHOTONIC DEVICES AND INTEGRATED CIRCUITS

Wednesday, December 2, 2020
All times Eastern Standard Time

SESSION D
10:00 AM - 12:30 PM
Room 4

PHOTONIC DEVICES AND INTEGRATED CIRCUITS
SESSION INTRODUCTION
Chair: Adriana Morana, Laboratory Hubert Curien and University of Saint Etienne, France

D-1

Dark Current Random Telegraph Signal in Short-Wavelength Infrared Image Sensor Based on InGaAs
C. Virmontois, J. Belloir, A. Bardoux, L. Pistre, L. Patier, O. Gilard, CNES, France, V. Goiffon, ISAE-SUPAERO, France

This paper focuses on the radiation-induced dark current and it associated random telegraph signal in short-wavelength infrared image sensor based on InGaAs.

D-2

Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements
V. Malherbe, S. De Paoli, B. Mamdy, G. Gasiot, P. Roche, STMicroelectronics, France

We report on alpha and neutron irradiation of 7.8 µm Single-Photon Avalanche Diodes (SPADs) manufactured in 40 nm CMOS. Displacement damage leads to dark count rate degradations, with implications for the reliability of SPAD-based systems.

D-3

Optical Single-Event Transients (OSETs) Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption
G. Tzintzarov, A. Ildefonso, J. Teng, M. Frounchi, A. Djikeng, P. Iyengar, P. Goley, R. Bahr, J. Cressler, Georgia Institute of Technology, USA, A. Khachatrian, S. Buchner, D. McMorrow, Naval Research Laboratory, USA

Optical single-event transients (OSETs) are measured in an integrated silicon-photonic waveguide. The results raise possible concerns for the potential use of integrated optical communications systems in space.

D-4

Coupled Temperature and Radiation Effects on Erbium and Erbium-Ytterbium Doped Fiber Amplifiers
M. Aubry, S. Girard, Université de Saint Etienne, France, C. Campanella, E. Marin, Y. Ouerdane, A. Boukenter, Laboratoire Hubert Curien, France, L. Mescia, Politecnico di Bari, Italy, A. Morana, Laboratory Hubert Curien, France, J. Mekki, CNES, France, A. Laurent, T. Robin, iXblue Photonics, France

We investigated the coupled radiation and temperature effect on Erbium Doped Fiber Amplifier and erbium-ytterbium doped fiber amplifier from -40°C to 120°C with an X-ray machine. The results show that there is no coupled effects.

Tuesday, December 8, 2020

10:00 AM - 1:00 PM

POSTER SESSION
Chair: Andrew Sternberg, Vanderbilt University

PD-1

Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes
L. Ryder, K. Ryder, A. Sternberg, J. Kozub, E. Zhang, R. Weller, R. Schrimpf, S. Weiss, R. Reed, Vanderbilt University, USA, D. Linten, K. Croes, IMEC, Belgium

The impact of device geometry on single event transient response of waveguide-integrated germanium photodiodes is examined using pulsed laser testing. Experimental results show vertical PIN diodes consistently exhibit shorter transient durations than lateral PIN diodes.

PD-2

Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers
X. Shan, Y. Sun, M. Xun, F. Zhao, B. Li, L. Wang, J. Gao, R. Gu, J. Luo, Z. Han, X. Liu, Key Laboratory of Silicon Device Technology and Institute of Microelectronics, Chinese Academy of Sciences, China, J. Liu, Institute of Modern Physics, Chinese Academy of Sciences, China, J. Wang, S. Wang, School of Physics, Peking University, China, Y. Xie, B. Wu, C. Xu, Beijing University of Technology, China

The radiation effects of Ta ion on static and dynamic characteristics of VCSEL were studied. Light-output power and current-voltage degraded, but modulation-current efficiency factor increased. DBR reflectivity reduction and defects in QWs were radiation mechanisms.