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Session G - DOSIMETRY
​

Thursday, December 3, 2020
​All times Eastern Standard Time

SESSION G
10:00 AM - 12:30 PM
Room 7
DOSIMETRY
SESSION INTRODUCTION
Chair: Peter Beck, Seibersdorf Laboratories
G-1
A HEAVY-ION BEAM MONITOR BASED ON 3D NAND FLASH MEMORIES
S. Gerardin, M. Bagatin, A. Paccagnella, University of Padova, Italy, S. Beltrami, Micron Technology, Italy, A. Costantino, G. Santin, A. Pesce, V. Ferlet-Cavrois, ESA, Netherlands, K. Voss, GSI, Germany

A heavy-ion beam monitor based on 3D NAND Flash memories was designed and tested with heavy ions at low LET. The capability of measuring fluence, angle, and LET of impinging particles is discussed.
G-2
Multi-Layered Solid-State Neutron Sensor
W. Rice, Northrop Grumman, USA, J. Levy, D. Adams, D. Nichols, R. Harrison, M. Jordan, L. Claus, D. Dorsey, Sandia National Laboratories, USA

A solid-state neutron sensor with exceptional efficiency at reduced size consists of a multi-layered stack alternating between converter material (boron-10) and collector material (silicon photodiode).  The sensor offers a unique advantage for low-profile in-situ dosimetry.
G-3
Radiation Shielding Evaluation of Spacecraft Walls Against Heavy Ion Beams using Micro-dosimetry
S. Peracchi, L. Tran, B. James, F. Pagani, V. Pan, J. Vohradsky, D. Bolst, S. Guatelli, M. Petasecca, M. Lerch, A. Rosenfeld, University of Wollongong, Australia,  D. Prokopovich, ANSTO, Australia, S. Lee, T. Inaniwa, N. Matsufuji, NIRS, Japan, A. Kok, M. Povoli, SINTEF MiNaLab, Norway, M. Jackson, University of Sydney, Australia

Radiation shielding evaluation of spacecraft walls is studied. A micro-dosimetry approach is used against heavy ions.
G-4
Operating Temperature Range of Phosphorus-doped Optical Fiber Dosimeters Exploiting Infrared Radiation-Induced Attenuation
A. Morana, C. Campanella, E. Marin, A. Boukenter, Y. Ouerdane, S. Girard, Laboratory Hubert Curien, France, G. Mélin, T. Robin, iXBlue Photonics, France, G. Li Vecchi, D. Di Francesca, CERN, Switzerland, F. Mady, M. Benabdesselam, Université de Nice, France, J. Mekki, N. Balcon, CNES, France

The temperature dependence of the radiation-sensitivity at 1550 nm of two P-doped optical fibers is investigated between -80°C and 300°C up to 1 kGy dose, resulting in a variation within 10% between ‑40°C and 80°C.
G-5
Floating Gate Dosimeter for Single Ion Detection
M. Brucoli, A. Waage, R. Ferraro, S. Danzeca, A. Masi, R. Garcia Alia, CERN, Switzerland, A. Pineda, B. Severa Mas IC-Malaga, Spain, V. Ferlet Cavrois, ESA, Netherlands

The capability of the floating gate dosimeter to detect single ions is investigated by heavy-ion microbeam experiments. The mechanism inducing the SET is experimentally explored by irradiating test chips with ions at different LETs.
Tuesday, December 8, 2020
10:00 AM - 1:00 PM
Poster Session
Chair: Andrew Sternberg, Vanderbilt University
PG-1
Characterization of a Certified Exposure Facility for Total Ionizing Dose Testing of Electronic Components
C. Tscherne, M. Wind, M. Latocha, P. Beck, Seibersdorf Laboratories, Austria

We characterize the Co-60 field of the TEC-Laboratory Seibersdorf, a certified TID testing facility. We investigate the dose effects of low-energy backscatter photons from the concrete walls with and without the use of lead boxes.
PG-2
Study of SEU sensitivity of SRAM-Based Radiation Monitors in 65 nm CMOS
J. Wang, J. Prinzie, KU Leuven, Belgium, A. Coronetti, CERN, Switzerland, P. Leroux, Leuven University, Belgium

A flexible SRAM based SEU radiation monitor has been designed, simulated and tested with heavy ions and protons. Its SEU sensitivity can be tuned by varying the cells’ supply voltage.
PG-3
Dosimetry of Thermal Neutron Beamlines at a Pulsed Spallation Source for Application to the Irradiation of Microelectronics
C. Cazzaniga, D. Raspino, J. Sykora, C. Frost, STFC, United Kingdom

Activation foils and a GEM detector, with time of flight technique, are used for dosimetry of thermal beamlines of a pulsed neutron source. These can be applied to the irradiation of microelectronics for SEE testing.
PG-4
Investigations on Spectral Photon Radiation Sources to Perform TID experiments in Micro- and Nano-Electronic Devices
M. Gaillardin, D. Lambert, D. Aubert, M. Raine, C. Marcandella, G. Assaillit, G. Auriel, M. Martinez, O. Duhamel, M. Ribière, N. Rostand, T. Lagutère, P. Paillet, N. Richard, C. Delbos, D. Poujols, S. Ritter, CEA, France

The TID sensitivity of mature and innovative technologies is investigated using both ionizing radiation experiments and Monte-Carlo simulations to discuss the potential of spectral photon radiation sources as an alternative for radiation effects studies.

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