Session H - HARDNESS ASSURANCE

Friday, December 4, 2020
All times Eastern Standard Time

SESSION H
9:00 AM - 11:30 AM
Room 8

HARDNESS ASSURANCE
SESSION INTRODUCTION
Chair: Greg Allen NASA-JPL

H-1

Assessment of Proton Direct Ionization RHA for Deep Sub-micron SRAMs used in Space Applications
A. Coronetti, R. Garcia Alia, M. Cecchetto, CERN, Switzerland, J. Wang, P. Leroux, KU Leuven, Belgium, C. Cazzaniga, STFC, United Kingdom, Y. Morilla, P. Martin-Holgado, CNA, Spain, M. Van Goethem, S. Brandenburg, KVI-CART, Netherlands, A. Javanainen, University of Jyväskylä, Finland, F. Saigné, University of Montpellier 2, France

The proton direct ionization impact on the soft error rate of typical space applications is analyzed for SRAMs showing a strong cross section enhancement through experimental data folding and Monte-Carlo simulations.

H-2

Variability in Total-Ionizing-Dose Response in 4th-Generation SiGe HBTs
J. Teng, A. Ildefonso, G. Tzintzarov, A. Moradinia, J. Cressler, Georgia Institute of Technology, USA, P. Wang, X. Li, E. Zhang, D. Fleetwood, Vanderbilt University, USA

TID response statistics are characterized in SiGe HBTs, exhibiting increasing variance with dose. Both analytical theory and TCAD are used to explain potential causes. Implications for assurance testing and radiation-tolerant design are discussed.

H-3

RHA Through System Level Testing: Risk Acceptance, Facility Requirements, Test Methodology and Applications
A. Coronetti, R. Garcia Alia, R. Ferraro, S. Danzeca, CERN, Switzerland,  J. Budroweit, German Aerospace Center (DLR), Germany, T. Rajkowski, P. Wang, 3D-Plus, France, I. da Costa Lopes, K. Niskanen, V. Pouget, F. Saigné, A. Touboul, University of Montpellier 2, France, D. Soderstrom, A. Javanainen, H. Kettunen, University of Jyväskylä, Finland, C. Cazzaniga, STFC, United Kingdom, J. Mekki, F. Manni, D. Dangla, CNES, France, A. Koelpin, BTU, Germany, R. Germanicus, University of Caen Normandie, France

A first guideline for system level testing of electronic equipment is provided through general definitions, risk acceptance assessments, facility requirements, methodologies and application examples.

H-4

Threats to Resiliency of Redundant Systems Due to Destructive SEE
R. Ladbury, NASA GSFC, USA, J. Zinchuk, M. Bay, Bay Engineering Innovations, USA 

Destructive SEE pose serious challenges for the reliable use of COTS devices in space systems.  We use system-level modeling and non-parametric statistics to assess the threat posed to redundant systems by destructive SEE.

H-5

Multiscale System Modeling of Single Event Induced Faults in Advanced Node Processors
M. Cannon, A. Rodrigues, D. Black, J. Black, L. Bustamante, B. Feinberg, M. McLain, S. Aggarwal, M. Marinella, Sandia National Laboratories, USA, L. Clark, J. Brunhaver, H. Barnaby, Arizona State University, USA

We propose a new simulation environment which allows the ability to track and incorporate experimental effects of single event-induced faults from transients on individual transistors to complex systems with multiple processors, memories and other devices.

H-6

Quantification of Fault Consequences to Track and Mitigate Risk in a CubeSat Experiment Using Model-Based Systems Analysis
R. Austin, K. Ryder, B. Sierawski, R. Reed, R. Schrimpf, N. Mahadevan, G. Karsai, A. Witulski, Vanderbilt University, USA

Functional models are used to identify possible faults and system-level fault consequences. A risk factor is calculated to evaluate mitigation. The risk factor from different radiation-induced faults is compared with system telemetry from on-orbit data.

Tuesday, December 8, 2020

10:00 AM - 1:00 PM

Poster Session
Chair: Andrew Sternberg, Vanderbilt University

PH-1

In-Situ Testing Methods for Mixed-Mode Harsh Environments
L. Scheick, T. Dennis, S. Woo, W. Kim, S. Dawson, N. Low, A. Boca, E. Martin, J. Chinn, J. Foster, R. Davies, NASA-JPL, USA

This paper describes JPL’s Dynamitron capabilities and recent modernization. Recent results are presented including solar cells, Internal Electrostatic Discharge (IESD), parts dose effects and system level assurance in extreme radiation and temperature environments.

PH-2

Identifying Radiation-Induced Micro-SEFIs in SRAM FPGAs
A. Perez-Celis, C. Thurlow, M. Wirthlin, Brigham Young University, USA

This paper presents a method to identify micro-single event functional interrupts from beam-test data in the configuration memory and BRAM of SRAM-based FPGAs. The results show the cross-section of these events for three SRAM FPGAs.

PH-3

TID Effects Evaluation Induced by Photon Sources in MOS Devices: Impact of Sensitive Volume Thickness and BEOL Layers
D. Lambert, M. Gaillardin, M. Raine, P. Paillet, O. Duhamel, C. Marcandella, M. Martinez, N. Rostand, T. Lagutere, D. Aubert, G. Assaillit, C. Delbos, CEA, France

TID effects induced by different photons sources are studied in MOS devices. Monte-Carlo modeling is performed to estimate energy depositions in sensitive volume behind device shielding and packaging. An effective TID approach is proposed.

PH-4

Single-Event Transient Case Study for System-Level Radiation Effects Analysis
M. Campola, R. Ladbury, R. Austin, NASA GSFC, USA, E. Wilcox, J. Pellish, NASA, USA, H. Kim, K. LaBel, Science Systems Applications, Inc., USA
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Analog single-event transient results are analyzed for two applications with a system architecture in mind. Application-specific analyses are presented on the MAX4595 commercial device using single-event effects criticality and goal structuring notation.

PH-5

A Comprehensive Comparison Between Design for Testability Techniques for Total Dose Testing of Flash-Based FPGAs
A. Ibrahim, M. Abdelwahab, A. Mohamed, N. Soliman, A. Abou-Auf, American University in Cairo, Egypt, M. Abdel-Aziz, Cairo University, Egypt
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We compare several design-for-testability techniques to generate worst-case test vectors for delay failure induced by total dose in sequential FPGAs. The comparison was validated experimentally using Microsemi ProASiC3 FPGA’s and Cobalt 60 facility.

PH-6

Analysis of System Level TID Test Results of a System in Package Point of Load Converter
T. Rajkowski, P. Kohler, P. Dubus, P. Wang, 3D-Plus, France, F. Saigné, K. Niskanen, J. Boch, T. Maraine, A. Touboul, University of Montpellier 2, France

Test at system level is evaluated by measuring the sensitivity of point-of-load converter parameters, exposed to total ionizing dose irradiations, at both system and component levels.

PH-7L

Modeling COTS System TID Response with Monte Carlo Sampling and Transistor Swapping Experiments
M.B. Smith, A.F. Witulski, J.S. Kauppila, A.L. Sternberg, K.L. Ryder, N. Mahadevan, and R.D. Schrimpf, Vanderbilt University, USA

Modeling the TID response of COTS systems is difficult due to each part’s parameters distributions. This work predicts the system-level output modeled with a small population of parts, which are used for experimental verification

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