2020_Session I

Session I - HARDENING BY DESIGN

Friday, December 4, 2020
All times Eastern Standard Time

SESSION I
9:00 AM - 11:30 AM
Room 9

HARDENING BY DESIGN
SESSION INTRODUCTION
Chair: Jeffrey Maharrey, Boeing

I-1

Understanding How Software Properties Impact the Effectiveness of Automated Software Fault Tolerance
J. Benjamin, J. Goeders, M. Wirthlin, Brigham Young University, USA

We present a model for understanding fault coverage when using COAST, our fully automated, compiler-based tool that adds fault mitigation to user code, backed up by data from neutron beam testing on the ARM A9 platform.

I-2

Partial TMR Selection for Improving the Soft Error Reliability of SRAM-Based FPGA Designs
A. Keller, M. Wirthlin, Brigham Young University, USA

The effectiveness of partial triple modular redundancy depends greatly upon component selection. Random selection provided no reliability improvement in neutron radiation testing. Maximizing protected routes reduced the failure rate by 20% with only 9% coverage.

I-3

Radiation Hardened Millimeter-Wave (mmW) Receiver Implemented in 90 nm, SiGe HBT Technology
S. Dash, E. Al Seragi, K. Muthuseenu, H. Barnaby, S. Zeinolabedinzadeh, Arizona State University, USA, J. Cressler, Georgia Institute of Technology, USA, A. Khachatrian, S. Buchner, U.S. Naval Research Laboratory, USA

This paper investigates a novel technique to substantially reduce single-event-effects in high-frequency receivers. Two-photon-absorption pulsed laser experiments validate the proposed hardening technique. A custom designed W-band (75-110 GHz) SiGe HBT receiver was used for this investigation.

I-4

Radiation Induced Error Mitigation by Shifted-Read Technique for 3-D NAND Flash Memory,
P. Kumari, B. Ray, W. Dorlus, University of Alabama in Huntsville, USA

We are proposing an algorithm to reduce the data corruption rate caused by total ionization dose on the MLC 3-D NAND flash memory using the shifted-read method. We find that the error rate significantly improves with shifted-read.

I-5

Radiation Hardened Cortex-R4F System-on-Chip Prototype with Total Ionizing Dose Dynamic Compensation in 28nm FD-SOI
F. Abouzeid, C. Lecat-Mathieu de Boissac, J. Daveau, C. Timineri, V. Bertin, P. Roche, STMicroelectronics, France, J. Autran2, Aix-Marseille University, France

This paper presents a radiation hardened Cortex-R4F System-on-Chip prototype with integrated total ionizing dose dynamic compensation capabilities, designed and fabricated in 28nm FD-SOI. The system immunity, while performing at 500 MHz, was experimentally verified under radiation.

Tuesday, December 8, 2020

10:00 AM - 1:00 PM

POSTER SESSION
Chair: Andrew Sternberg, Vanderbilt University

PI-1

Evaluating Architectural, Redundancy, and Implementation Strategies for Radiation Hardening of Integrated Circuits
S. Pagliarini, TalTech, Estonia, L. Benites, F. Lima Kastensmidt, UFRGS, Brazil, M. Martins, Mentor Graphics, USA, P. Rech, LANL/UFRGS, USA

Nine variants of matrix multiplication were taped-out in 16nm FinFET silicon and irradiated with neutrons. Simulation-based fault injection was utilized to validate measurements and to explore the effects of different implementation strategies on failure rates.

PI-2

Linux TMR RISC-V Soft-core Fault Injection and Neutron Radiation Tests
A. Wilson, C. Thurlow, S. Larsen, M. Wirthlin, Brigham Young University, USA

The fault injection and neutron radiation results of a TMR RISC-V soft processor running Linux showed a 10× improvement in SEU reliability with a cost of around 4× resource utilization.

PI-3

Voltage-Controlled Oscillator Utilizing an Inverse-Mode SiGe-HBT Biasing Circuit for SET Mitigation
I. Song, J. Meang, Oklahoma State University, USA, A. Khachatrian, S. Buchner, D. McMorrow, Naval Research Laboratory, USA, P. Paki, DTRA, USA, M. Cho, J. Cressler, Georgia Institute of Technology, USA

A VCO using inverse-mode SiGe HBTs is proposed. A through-wafer two-photon absorption pulsed-laser experiment was conducted. The proposed VCO exhibited mitigated SET response.

PI-4

A Self-Compensated Preamplifier Providing Linear Output up to 0.6 Mrad of Total Ionizing Dose Based on Miller Capacitor Compensation
C. Lee, G. Cho, Korea Advanced Institute of Science and Technology, Republic of Korea, I. Kwon, Korea Atomic Energy Research Institute, Republic of Korea

A preamplifier for robustness to TID is presented. This circuit provides less amplitude and SNR degradation. It is operated by monitoring on amplitude of a replicated preamplifier and compensating gain bandwidth product with Miller capacitors.