Total-Ionizing-Dose Mitigation of Bandgap Reference Circuits Fabricated on Radiation-Hardened SOI Process and Material Z. Chen, Hunan University; Y. Dong, Y. Shan, Shanghai Institute of Microsystem and Information Technology; D. Ding, University of Chinese Academy of Sciences; S. Zhou, Xinjiang Technical Institute of Physics and Chemistry
BJT and subthreshold CMOS based bandgap reference circuits are fabricated on radiation-hardened SOI process and material, which provide 35.5 and 4.1 times improvement in TID performance, compared with designs in commercial technology.
Total Ionizing Dose Hardness of an 8Mbit 40nm CMOS Technology Based SONOS NOR Flash H. Puchner, V. Prabhakar, I. Kouznetsov, T. Phan, K. Donnelly, Cypress Semiconductor; H. Tausch, JD Instruments
The total ionizing dose (TID) hardness of a 40nm CMOS based SONOS NOR flash non-volatile memory is studied at space radiation levels up to 500krad.
Ionizing Radiation Effects Spectroscopy (IRES) for Analysis of Total-Ionizing Dose Degradation in Voltage-Controlled Oscillators B. P. Patel, M. Joplin, R. C. Boggs, D. Reising, T. D. Loveless, University of Tennessee at Chattanooga; M. W. McCurdy, L. W. Massengill, Vanderbilt University
The ionizing radiation effects spectroscopy (IRES) technique for measurement of TID in voltage-controlled oscillators designed in a 130 nm bulk CMOS technology shows minor increases in operating frequency, and increased temporal variation with dose.
Separation of Total Ionizing Dose and Displacement Damage Effects in CBRAM Cells J. L. Taggart, H. J. Barnaby, M. N. Kozicki, K. Holbert, Arizona State University; R. B. Jacobs-Gedrim, E. S. Bielejec, W. Hardy, M. J. Marinella, Sandia National Laboratories
Conductive bridging random access memory cells were exposed to heavy ions of different mass and energy to separate total ionizing dose (TID) effects from displacement damage. Radiation effects were found to be dominated by TID.
Total Ionizing Dose (TID) Effects on a Double-Interface CoFeB-MgO Magnetic Tunnel Junction B. Wang, Z. Wang, K. Cao, Y. Zhang, W. Zhao, Beihang University; Y. Zhao, Beijing Micoelectronics Technology Institute
Total ionizing dose tolerance of a double-interface perpendicular anisotropy film stacks was experimentally evaluated through a gamma source. The coercivity increased with the irradiation doses, whereas no variation was observed for the saturation magnetization.
Gamma Radiation Effects in Graphene Field Effect Transistors with H-BN Thin Film Substrates E. Cazalas, M. R. Hogsed, J. W. McClory, Air Force Institute of Technology; S. Vangala, M. R. Snure, Air Force Research Laboratory
Radiation effects on graphene field effect transistors are investigated using the Ohio State University Nuclear Reactor Laboratory Co-60 irradiator. The study examines h-BN thickness and graphene channel length on a large number of samples.
Influence of Halo Implantations on the Total Ionizing Dose Response of 28 nm P-MOSFETs Irradiated to Ultra-High Doses S. Bonaldo, S. Mattiazzo, A. Paccagnella, S. Gerardin, INFN-Padova and University of Padova; C. Enz, Institute of Microengineering - EPFL; A. Baschirotto, INFN-Milano and University of Milano Bicocca; X. Jin, Northwest Institute of Nuclear Technology
Total ionizing dose effects on 28 nm bulk p-MOSFETs show a gate-length dependence. This effect is associated to the halo implantations, which increase the radiation tolerance of short channel transistors.
Total-Ionizing-Dose Irradiation Damage Evaluation Method for High Voltage SOI LDMOS X. Zhou, L. Zhang, M. Qiao, Z. Yuan, Z. Li, B. Zhang, University of Electronic Science and Technology of China; L. Shu, Harbin Institute of Technology; Y. Zhao, Harbin Institute of Technology and Beijing Microelectronics Technology Institute
Irradiation conductance modulation model for high voltage SOI LDMOS is proposed to reveal the linear drain current degradation mechanism, which provides a method to achieve the irradiation damage evaluation for the drift region.
Comparative Study of Cryogenic Versus Room-Temperature Proton Irradiation of N-Channel CCDs and Subsequent Annealing T. Prod’homme, P. Verhoeve, F. Lemmel, H. Smit, S. Blommaert, C. van der Luijt, I. Visser, T. Beaufort, Y. Levillain, B. Shortt, ESA
Two Teledyne-e2v CCD280 were proton irradiated: one while imaging at cold, the other unbiased at room temperature. We report on differences in post-irradiation hot pixel population, trap species, and CTI, including after annealing.
Long-Term Degradation Study of CMOS SPADs in Space Radiation Environment M. Campajola, F. Di Capua, University of Naples and INFN; D. Fiore, Università della Calabria and INFN; L. Gasparini, H. Xu, Fondazione Bruno Kessler
CMOS SPADs have been tested for displacement damage and total ionizing dose. Mitigation effects by possible in-flight cooling and annealing have been addressed. The limit of operability in future space missions has been demonstrated.
Effect of Phototransistor Design on Optocoupler Radiation Tolerance S. R. Messenger, M. C. Mishler, P. Dudek, Northrop Grumman Mission Systems; Y. Liu, R. Campanini, R. Spitzer, D. Young, Micropac Industries, Inc.; J. F. Salzman, Salzman Engineering
We examine the effects of 250 MeV proton irradiation on two different sizes of bipolar phototransistors used in Micropac optocoupler packages. The radiation response is shown to be related to device mask layout.
First Proton and Gamma Radiation of the MCT NIR European Astronomy Large Format Array Detector P.-E. Crouzet, S. Tetaud, D. Gooding, B. Shortt, T. Beaufort, S. Blommaert, B. Butler, G. Van Duinkerken, J. Ter Haar, F. Lemmel, C. van der Luijt, H. Smit, ESA/ESTEC
We report on the impact of proton and gamma irradiation on an MCT detector. The main result is the proton irradiation prevents the increase of the dark current due to the later total ionizing dose.
Gamma Radiation Induced Effects in Silicon Carbide Films and Photonic Devices Q. Du, D. Ma, A. M. Agarwal, J. Hu, Massachusetts Institute of Technology; B. Li, M. Li, University of Minnesota; Y. Huang, Aalto University
Gamma-ray induced radiation damage is studied in silicon carbide materials and photonic devices, both in-situ and ex-situ. Our results reveal that radiation hard photonic device can be made by engineering waveguide dimension.
Neutron Displacement Damage Effect of Topological Insulator Heterostructure Based Photodetectors Y. Chi, H. Sun, L. Fang, National University of Defense Technology
The neutron irradiation was performed on the arrayed topological insulator heterostructure based photodetectors. The variations of the electrical characteristics were analyzed on I-V curve, dark current, open circuit voltage and short circuit current.
Distributed Temperature Sensing Using Type-II Fiber Bragg Gratings in Sapphire Optical Fiber in a Nuclear Reactor B. A. Wilson, K. M. McCary, T. E. Blue, The Ohio State University
A cladded sapphire optical fiber with an array of type-II fiber Bragg gratings was tested in the Ohio State Research Reactor. The fiber provided distributed temperature measurements over four days of irradiation without degradation.
Getting SiC Power Devices off the Ground: Overcoming the Radiation Threat J.-M. Lauenstein, M. C. Casey, R. L. Ladbury, K. A. LaBel, NASA GSFC
A mounting body of heavy-ion radiation effects knowledge across SiC power devices points to methods for more rugged design and appropriate testing geared toward space applications.
Dose-Rate Dependence of the Total-Ionizing-Dose Response of AlGaN/GaN HEMTs R. Jiang, E. X. Zhang, M. W. McCurdy, P. Wang, H. Gong, R. D. Schrimpf, D. M. Fleetwood, Vanderbilt University
Significant threshold voltage shifts are observed during high-rate 10-keV X-ray irradiation of AlGaN/GaN HEMTs. Shifts are much smaller for lower-rate Cs-137 irradiation. No ELDRS is observed; mechanisms are discussed.
Impacts of Proton Radiation on Heavy Ion-Induced Single Event Transients in 65 nm CMOS Technology Z. Wu, S. Chen, National University of Defense Technology
3x1013/cm2 1.2 MeV proton radiation will significantly increase heavy ion SET cross-sections and pulsewidths in 65 nm bulk CMOS technology. Radiation hardness assurance for deep space electronic devices should consider this effect.
Methodology for Identifying Radiation Effects in Robotic Systems with Mechanical and Control Performance Variations J. T. Howard, E. J. Barth, R. D. Schrimpf, R. A. Reed, D. S. Vibbert, A. F. Witulski, Vanderbilt University
Complications of identifying radiation effects in electromechanical sensors in the presence of mechanical variation are discussed. A corresponding analysis method is developed to separate radiation degradation effects from expected sensing variation due to mechanical tolerance.
Multi-Scale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts A. Privat, H. J. Barnaby, B. S. Tolleson, X. Han, ASU; P. C. Adell, B. G. Rax, JPL
A multiscale modeling platform that supports the ``virtual`` qualification of COTS parts is presented. Simulation and experimental results show good correlation and suggest this platform as a complementary tool within the radiation hardness assurance flow.
Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices X. Li, University of Chinese Academy of Sciences and Xinjiang Technical Institute of Physics and Chemistry; W. Lu, Q. Guo, C. He, X. Yu, Y. Li, X. Wang, X. Yu, J. Sun, Xinjiang Technical Institute of Physics and Chemistry; D. M. Fleetwood, Vanderbilt University
A temperature-switching irradiation (TSI) sequence based on first-principles understanding of interface-trap buildup and annealing is shown to be a practical and conservative test for ELDRS in linear bipolar devices and ICs.
ABFT and Smart-Pool: Increasing Efficiently Convolutional Neural Networks Reliability F. F. dos Santos, P. F. Pimenta, P. Rech, Universidade Federal do Rio Grande do Sul
We improve the reliability of neural-networks for object detection on GPUs. We experimentally analyze faults propagation and modify the neural-network structure to detect 98% and correct 87% of critical SDCs with negligible overhead.
Microcontroller Compiler-Assisted Software Fault Tolerance M. Bohman, B. James, M. Wirthlin, J. Goeders, Brigham Young University; H. Quinn, Los Alamos National Labs
We present a fully automated, compiler-based tool to add SEU fault mitigation to user code. This technique increased the mean work to failure of a MSP430 by seven times in a neutron radiation beam.
Using MRED to Screen Multiple Node Charge Collection Mitigated SOI Layouts J. D. Black, D. A. Black, P. E. Dodd, M. R. Shaneyfelt, J. Teifel, J. G. Salas, Sandia National Labs; J. A. Dame, R. Steinbach, M. Davis, Scientic, Inc.; R. A. Reed, R. A. Weller, J. M. Trippe, K. M. Warren, A. M. Tonigan, R. D. Schrimpf, Vanderbilt University; R. S. Marquez, Air Force Research Laboratory
Multiple node charge collection robust SOI latch designs and layouts are simulated and tested. MRED is used to identify potential single-event susceptibilities associated with different layouts prior to fabrication.
Best Practices for Using Electrostatic Discharge (ESD) Protection Techniques for Single-Event Transient Mitigation M.-K. Cho, I. Song, Z. E. Fleetwood, J. D. Cressler, Georgia Institute of Technology; A. Khachatrian, Sotera Defense; J. H. Warner, S. P. Buchner, D. McMorrow, Naval Research Laboratory; P. Paki, Defense Threat Reduction Agency
Three different SPST switch configurations (conventional design, floating body, and floating body/N-well) were implemented to provide insight on how to best apply various ESD protection techniques while also achieving robust SET mitigation.
A SEE- Immune Frequency Divider with Mandatory Updating Mechanism for Clock Data Recovery H. Yuan, J. Chen, B. Liang, Y. Chi, X. Chen, Y. Guo, National University of Defense Technology
A layout hardened divider with the mandatory updating mechanism that can recover from the error state to normal state is proposed for clock and data recovery. The experiment shows complete SEE immunity during ion strikes.
Single Event Effects Characterization of LC-VCO PLLs in a 28-nm CMOS Technology Z. Zhang, University of Saskatchewan and China University of Mining and Technology; C. Gu, L. Chen, University of Saskatchewan; H. Djahanshahi, M. Patel, Microsemi Corporation
Two-photon absorption laser experiments are conducted on a CMOS 28nm tunable LC-tank phased-locked loop circuit. The SEEs sensitivities for each block as well as the effects of varying parameters were analyzed.
Correlation of Single-Board Computer Ground-Test Data and on-Orbit Upset Rates from the Gaia Mission D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson, Data Devices Corp.; E. Ecale, P. Paulet, P. Tatry, Airbus Defense and Space SAS; E. Serpell, ESOC, ESA
On-orbit SEU data for the DDC SCS750 single board computers used in the Gaia mission are analyzed for correlation to space weather. SEU had no effect on mission operation because of SBC error correction.
Methods for and the Influence of Uncertainty Propagation in the Solar Energetic Particle Environment Modelling (SEPEM) System P. Truscott, Kallisto Consultancy, Ltd., D. Heynderickx, DH Consultancy, A. Varotsou, TRAD, F. Lei, RadMon Research, P. Jiggens, ESA / ESTEC, I. Sandberg, Space Applications & Research Consultancy
Recent enhancements to the SEPEM solar proton/ion modelling system include the propagation of uncertainties in the model generation process. The method of this treatment is described and the relative importance of the contributions discussed.
TID Evaluation System with on-Chip Electron Source and Programmable Sensing Mechanisms on FPGA K. Maragos, G. Lentaris, D. Soudris, National Technical University of Athens; F. Di Capua, L. Campajola, M. Campajola, University of Naples Federico II; G. Furano, A. Tavoularis, L. Santos, ESTEC, ESA
We combine HW and SW techniques to perform onchip irradiation and characterization of SRAM SoC FPGAs. We present a methodology for modeling TID effects, test setup with Sr90/Y90 source, and preliminary results on Zynq.
Radiation Analysis and Shielding Optimization of RADEM, a Radiation Hard Electron Monitor for the JUICE Mission M. Pinto, P. Goncalves, LIP; W. Hajdas, A. Mrigakshi, PSI; A. Marques, J. C. Pinto, EFACEC SA
Radiation analysis of RADEM, to be flown in the JUICE mission, was computed with Geant4. Shielding was optimized to ensure TID and DD levels compatible with all EEE components sensitivity. SEU rates were also calculated.
Initial Assessment of NurFETs Suitability for Radiation Sensors S. Kaya, R. Lok, S. Abubakar, A. Aktag, H. Karacali, E. Yilmaz, Center for Nuclear Radiation Detectors Research and Applications and Abant Izzet Baysal University
Initial device characteristics and Co-60 gamma irradiation response of NurFETs fabricated in NURDAM-Turkey have been investigated. Various gate oxide thicknesses were studied and obtained results were compared with commercial RadFETs.
Analysis of RADFET Response at Different Dose Rates and Re-Interpretation of Flight Data from MERLIN Experiment During Giove A Mission A. Jaksic, R. Duane, N. Vasovic, Tyndall National Institute; E. Yilmaz, Center for Nuclear Radiation Detectors Research and Applications; S. Martinez, Universidad Autonoma de Madrid; A. Lalena, University of Granada; S. Stankovic, Institute for Nuclear Sciences Vinca; G. Ristic, Faculty of Electronic Engineering; M. Poizat, ESA-ESTEC
We have performed detailed calibration at different dose rates of Tyndall National Institute RADFETs. We discuss microscopic mechanisms underlying observed response and re-interpret flight data from ESA’s MERLIN experiment during Giove A mission.
SOI Thin Microdosimeter Detectors for Low Energy Ions and Radiation Damage Studies B. W. James, J. Vohradsky, L. T. Tran, D. Bolst, M. Carr, V. Pan, S. Guatelli, A. Rosenfeld, University of Wollongong; D. Hinde, M. Dasgupta, A. Stuchbery, Australian National University; D. Prokopovich, M. Reinhard, Australian Nuclear Science and Technology Organization; V. Perevertaylo, M. Povoli, A. Kok, SINTEF
The response of 3D silicon microdosimeters developed by CMRP were investigated with low energy ions. The SOI microdosimeters were able to measure LET of different energies of ions, as well as conduct microdosimetric measurements.
Uncertainty Characterization of Silicon Damage Metrics P. J. Griffin, Sandia National Laboratories
High fidelity uncertainty characterizations are provided for radiation damage metrics relevant to the modeling of silicon damage. Uncertainty contributors addressed include the nuclear data, damage partition function, threshold treatment, and model defect.
A New Discriminating High Temperature Fission Chamber Filled with Xenon Designed for Sodium-Cooled Fast Reactors G. Galli, H. Hamrita, C. Jammes, LIST, CEA; M. J. Kirkpatrick, E. Odic, P. Dessante, P. Molinie, GeePs; B. Cantonnet, J.-C. Nappe, Photonis
Xenon high temperature fission chamber for sodium-cooled reactors, unlike argon filled fission chambers, can operate at temperatures of 500°C without partial-discharges and discriminate neutrons and partial-discharges at temperatures of 650°C.
Back Gate Impact on SEU Characterization of a Double SOI 4k-Bit SRAM J. Gao, B. Li, Y. Huang, B. Li, F. Zhao, C. Wang, Z. Cheng, Z. An, Z. Han, J. Luo, J. Liu, Chinese Academy of Sciences; G. Guo, China Institute of Atomic Energy
Double Silicon-on-insulator (DSOI) structure is used in a 4k-bit SRAM to improve SEU tolerance. The back gate bias of NMOSFET and PMOSFET could be applied, changing circuit tolerance against radiation.
Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs T. Makino, T. Ohshima, National Institutes for Quantum and Radiological Science and Technology (QST); S. Takano, National Institutes for Quantum and Radiological Science and Technology (QST) and Saitama University; S. Harada, National Institute of Advanced Industrial Science and Technology (AIST); Y. Hijikata, Saitama University
The single-event burnout (SEB) of SiC trench gate MOSFETs are observed for the first time in comparison with those of SiC planar gate MOSFETs. The advantage of trench gate MOSFET for SEB was shown
Analyzing Neutron-Induced Multi-Bit-Upset (MBU) Patterns in 14nm Tri-Gate Flip-Flop Array S. Kumar, L. Everson, Q. Tang, P. Mazanec, C. H. Kim, University of Minnesota; M. Cho, P. Meinerzhagen, A. Malavasi, D. Lake, C. Tokunaga, M. Khellah, J. Tschanz, S. Borkar, V. De, Intel Corporation
Neutron induced multi-bit-upsets (MBUs) are measured from 14nm flip-flop arrays. Different MBU patterns pertaining to specific sensitive node locations are analyzed from the flip-flop array data.
Ultra High Energy Heavy Ion Test beam on Xilinx Kintex7 SRAM-Based FPGA S. Azimi, B. Du, L. Sterpone, Politecnico di Torino; D. M. Codinachs, V. Ferlet-Cavrois, C. B. Polo, ESTEC, ESA; R. G. Alía, M. Kastriotou, P. F. Martínez, European Organization for Nuclear Research
This paper presents results from the first radiation test performed on a Xilinx Kintex7 SRAM-Based FPGA with an ARM-based SoC as benchmark circuit using Ultra High Energy heavy ion beam.
An Empirical Model Based Approach to Explore Design Space for Logic Circuits H. Jiang, H. Zhang, J. S. Kauppila, B. L. Bhuva, L. W. Massengill, Vanderbilt University
A design methodology employing empirical models for identifying the optimum combinational of topology, supply voltage, and frequency for a given SE cross-section specifications is developed for 16-nm bulk FinFET node.
Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates H. Gong, K. Ni, E. X. Zhang, A. L. Sternberg, J. A. Kozub, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University; N. Waldron, B. Kunert, D. Linten, IMEC
The pulsed-laser single-event transient response of InGaAs FinFETs on silicon substrates is investigated. The band alignment of this material system reduces charge collection enhancement, as compared with devices on semi-insulating InP substrates.
Laser-Induced Single Event Transients in Black Phosphorus MOSFETs C. Liang, Vanderbilt University and Maxim integrated Inc.; R. Ma, Y. Su, S. J. Koester, University of Minnesota; E. X. Zhang, A. L. Sternberg, P. Wang, K. L. Ryder, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University
Laser-induced SETs are observed in black phosphorus MOSFETs. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms.
The Effects of High-Temperature on the Single-Event-Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology A. P. Omprakash, Z. E. Fleetwood, A. Ildefonso, G. Tzintzarov, J. D. Cressler, Georgia Institute of Technology; A. S. Cardoso, Georgia Tech Research Institute; J. Babcock, R. Mukhopadhyay, Texas Instruments; A. Khachatrian, Sotera Defense; J. H. Warner, D. McMorrow, S. Buchner, Naval Research Laboratory
The SET response of a high-voltage complementary SiGe-on-SOI technology is investigated across temperature. The impact of ambient and internal device temperature on the transient response is presented.
Electron and Proton Radiation Effects on Carrier Dynamics in MBE and MOCVD Grown Photovoltaic Test Structures A. I. Hudson, A. C. Scofield, W. T. Lotshaw, The Aerospace Corporation; S. Hubbard, M. Slocum, Rochester Institute of Technology; B. Liang, M. C. Debnath, B.-C. Juang, D. L. Huffaker, University of California, Los Angeles
p and n-type GaAs heterostructures were exposed to electron and proton radiation. Protons generated trap states. The damage and non-radiative coefficients suggest that n-type specimens are more radiation hard than p-type.
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400V SOI NLDMOS L. Shu, Y.-F. Zhao, Harbin institute of Technology
The breakdown voltage variations of 400V SOI NLDMOS after exposure to total dose radiation under different experimental bias conditions are discovered. The mechanisms of these variations are analyzed and confirmed by TCAD simulations.
Dissociation Energies of the Divacancy with Various Charged States: First Principle Calculation Y. Wei, X. Li, C. Liu, S. Dong, Y. Liu, G. Lv, J. Zhao, Harbin Institute of Technology
The revised screened hybrid functional is used to investigate formation energy and dissociation energies of the divacancy with various charged states. This helps to analyze the effect of electric field on irradiation damage.
Radiation Response of MoS2-Interlayer-MoS2 Tunnel Junctions P. Wang, A. O’Hara, H. Gong, P. F. Wang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, Vanderbilt University; C. J. Perini, E. M. Vogel, Georgia Institute of Technology
We have evaluated the nature of the conduction and the radiation response of 2D MoS2-based tunnel junctions. Devices with HfO2 interlayer dielectrics show great promise for use in radiation-tolerant, ultimately-scaled tunnel FETs.
Impact of the Elemental Makeup of an IC in Generating Single-Event Upsets from Low Energy (<10 MeV) Neutrons: a 3D NAND Flash Case Study P. M. Conway, M. J. Gadlage, D. I. Bruce, J. D. Ingalls, A. M. Williams, D. P. Bossev, NSWC Crane
The role various elements found in an integrated circuit have in producing single-event upsets from low-energy neutrons is discussed. Neutron data on a modern 3D NAND flash is used as a case study.
Multi-Scale Simulation of Single Particle Displacement Damage in Silicon Device C. He, D. Tang, Z. Zang, Y. Li, Xian Jiaotong University
A theoretical method combining with molecular dynamics simulation and kinetic Monte Carlo simulation is proposed to investigate the formation and evolution of single particle displacement damage in silicon device.
Heavy Ion Transport in SiC-Based Power Devices J. A. McPherson, P. J. Kowal, G. K. Pandey, T.-S. P. Chow, W. Ji, Rensselaer Polytechnic Institute; A. A. Woodworth, NASA GRC
Study of heavy ion transport in SiC-based power devices. Energy deposition and charge generation are analyzed. Radiation data with improved fidelity is utilized in a unified physics model between radiation transport and device response.
Heavy Ion Induced Single Event Burn-Out (SEB) in SiC Schottky Diodes G. K. Pandey, J. A. McPherson, P. J. Kowal, W. Ji, T.-S. P. Chow, Rensselaer Polytechnic Institute; A. A. Woodworth, NASA GRC
We perform 3D TCAD modeling for Single Event Burnout due to heavy ion strike on 1200V 4H-SiC SBD and JBS diode. We propose addition of a field reduction layer and evaluate the improved robustness