New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles P. Caron1, C. Inguimbert1, L. Artola1, F. Bezerra2, R. Ecoffet2 1. ONERA, France 2. CNES, France
This paper proposes a method using electron and proton single event upset sensitivities of a device to predict its sensitivity to heavy ions. The method is described, and comparisons between experimental and simulation results are presented.
Statistical Method to Extract Multiple-Cell Upsets of SRAM-based FPGAs A. Perez-Celis, M. Wirthlin Brigham Young University, USA
This paper presents a method to extract multiple-cell upsets in the configuration memory of SRAM-based FPGAs with minimal layout information. The results show the distribution of MCUs for three families of Xilinx FPGAs.
Analytical Modeling of Single-Event Upsets in Advanced Technologies R. Harrington, J. Kauppila, M. Alles, D. Ball, B. Bhuva, L. Massengill Vanderbilt University, USA
An analytical model for predicting the critical charge of fast-switching memory circuits is presented. Predictions of SRAM critical charge align with SE compact model results calibrated to experimental data in 14/16nm bulk FinFET technology.
Correlation of Sensitive Volumes Associated with Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode K. Ryder1, L. Ryder1, A. Sternberg1, J. Kozub1, E. Zhang1, A. Khachatrian2, S. Buchner2, D. McMorrow2, J. Hales2, Y. Zhao3, L. Wang3, C. Wang3, R. Weller1, R. Schrimpf1, S. Weiss1, R. Reed1 1. Vanderbilt University, USA 2. U.S. Naval Research Laboratory, USA 3. Beijing Microelectronics Technology Institute, China
An ion-based sensitive volume is developed for a diode and applied to laser charge generation profiles. While this sensitive volume works well for ions with various LETs, it does not agree with all laser measurements.
Single Event Effect Testing with Xe and Pb Ultra High Energy Heavy Ion Beams M. Kastriotou1, P. Fernandez Martinez1, R. Garcia Alia1, C. Cazzaniga2, A. Coronetti1, G. Lerner1, M. Tali3, J. Bernhard1, A. Gerbershagen1, S. Danzeca1, H. Wilkens1 1. CERN, Switzerland 2. STFC, United Kingdom 3. CERN/ESA/University of Jyvaskyla, Switzerland
An evaluation of Single Event Effect testing with the CERN Ultra High Energy heavy ion beams in terms of parallel board testing, contribution of fragmentation and physical processes is performed through experimental measurements and simulations.
Impact of Interface Quality on Single-Event Charge Collection in Rad-hard SOI MOSFETs A. Tonigan1, D. Ball1, J. Black2, D. Black2, J. Trippe2, M. Alles1, R. Reed1, R. Schrimpf1 1. Vanderbilt University, USA 2. Sandia National Laboratories, USA
Data-calibrated TCAD simulations quantify the impact of isolation interface quality on single-event charge collection in SOI MOSFETs. Sensitivity to surface recombination velocity is reduced at low LETs and with scaling from 350 to 90 nm.
Single Event Transient Analysis with Ionizing Radiation Effects Spectroscopy (IRES) B. Patel1, D. Reising1, L. Massengill2, T. Loveless1 1. The University of Tennessee at Chattanooga, USA 2. Vanderbilt University, USA
Ionizing radiation effects spectroscopy for SET characterization is demonstrated through simulation and measurements. IRES simplifies the identification of transients through statistical analysis of waveform behavior, allowing for the capture of subtle changes in circuit dynamics.
Impact of Configuration Scrubbing on Silent Data Corruption in FPGA Cloud Applications A. Keller, M. Wirthlin Brigham Young University, USA
Using neutron radiation testing and two different fault injection flows, configuration scrubbing is shown to significantly reduce the occurrence and persistence of silent data corruption in several Stratix V FPGA accelerator applications.
In-Situ Testing of a Multi-Band Software-Defined Radio Platform in a Mixed-Field Irradiation Environment J. Budroweit1, S. Mueller2, M. Jaksch1, R. Garcia Alia3, A. Coronetti3, A. Koelpin4 1. DLR, Germany 2. FAU, Germany 3. CERN, Switzerland 4. BTU, Germany
In this paper a complex automated in-situ test concept for a multi-band software-defined radio platform in a mixed-field radiation environment is presented and selected test results of the system-level evaluation are discussed.
The Use of Microprocessor Trace Infrastructures for Radiation-Induced Fault Diagnosis M. Peña-Fernandez1, A. Lindoso2, L. Entrena2, M. Garcia-Valderas2 1. Arquimea Ingenieria SLU, Spain 2. Universidad Carlos III, Spain
A methodology is proposed to diagnose radiation-induced faults in a microprocessor using the hardware trace infrastructure. The diagnosis capabilities of this approach are demonstrated for an ARM core under neutron irradiation.
Effects of Ion-Induced Electric Fields on Leakage Current Degradation in Silicon Carbide Schottky Power Diodes R. Johnson1, D. Ball1, K. Galloway1, A. Sternberg1, A. Witulski1, M. Alles1, R. Reed1, R. Schrimpf1, J. Hutson2, A. Raman3, P. Chakraborty3, R. Arslanbekov3, J. Lauenstein4, A. Javanainen5 1. Vanderbilt University, USA 2. Lipscomb University, USA 3. CFD Research Corporation, USA 4. NASA GSFC, USA 5. University of Jyväskylä, Finland
Onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend only on material properties, ion LET, and bias across multiple manufacturers. Voltage derating has no effect on leakage current degradation.
A Solid-State Microdosimeter for Dose and Radiation Quality Monitoring for Astronauts in Space S. Peracchi1, B. James1, L. Tran1, D. Bolst1, D. Prokopovich2, J. Davis1, S. Guatelli1, M. Petasecca1, M. Lerch1, N. Matsufuji3, A. Kok4, M. Povoli4, A. Rosenfeld1 1. University of Wollongong, Australia 2. Australia Nuclear Science and Technology Organisation (ANSTO), Australia 3. Heavy Ions Medical Accelerator in Chiba, Japan 4. SINTEF, Norway
In this work, we demonstrated the possibility of using a silicon on insulator (SOI) microdosimeter for Q and Hp(10) derivation in a radiation field mimicking galactic cosmic rays outside and inside the International Space Station.
Study of the Deposited Energy Spectra in Silicon by High Energy Neutron and Mixed Fields C. Cazzaniga1, R. Garcia Alia2, M. Kastriotou2, M. Cecchetto2, P. Fernandez-Martinez2, C. Frost1 1. STFC, United Kingdom 2. CERN, Switzerland
An experimental and computational study of the energy deposition in a silicon detector allows for the comparison of high-energy spallation facilities dedicated to the irradiation of microelectronics and for the validation of radiation transport models.
An Innovative and Flexible Real-Time Dosimeter for Radiation Hardness Assurance Tests F. Di Capua1, P. Casolaro1, L. Campajola1, G. Breglio2, S. Buontempo2, M. Consales3, A. Cusano3, F. Fienga2, P. Vaiano3, A. Cutolo3 1. University of Napoli Federico II and INFN-Napoli, Italy 2. University of Napoli Federico II, Italy 3. University of Sannio, Italy
In this work we propose an innovative method for real-time dosimetry with radiochromic films. This method, based on optoelectronic instrumentation, makes radiochromic film a flexible and accurate dosimetric tool for radiation hardness quality assurance tests.
Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 µm CMOS process S. Carbonetto1, M. Echarri1, J. Lipovetzky2, M. Garcia-Inza1, A. Faigon1 1. Device Physics-Microelectronics Laboratory, INTECIN, Facultad de Ingeniería, Universidad de Buenos Aires, Argentina 2. Low Temperatures Lab., Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Argentina
We present a differential dosimeter based on the mismatch of two identical FOXFETs. The sensor was fabricated in a high-voltage 0.35µm CMOS process, and it was characterized regarding its response to radiation and temperature
A Novel System and Method for Optical Fiber Post-Mortem Dose Measurements D. Francesca1, K. Kandemir1, G. Li Vecchi1, R. Garcia Alia1, Y. Kadi1, M. Brugger1 1. CERN, Switzerland
This contribution presents a novel and versatile ‘system and method’ to perform post-mortem optical attenuation measurements on irradiated optical fibers for radiation dosimetry purposes.
Preliminary On-Orbit Results from the GOES-16 and GOES-17 Space Environment In-Situ Suite (SEISS) Dosimeters E. Dawson, T. Nasser, B. Dichter, G. Galica Assurance Technology Corporation, USA
Preliminary dose results from the GOES-16 and GOES-17 dosimeters are presented, including the period of heightened solar activity in September 2017. The dosimeters comprise part of the Space Environment In-Situ Suite of space weather sensors.
Experimental and Numerical Study of Internal Charging on Spacecraft and Risks of Discharge on Floating Metallic Elements A. Ben Zaid1, T. Paulmier1, P. Sarrailh1, D. Payan2 1. ONERA, France 2. CNES, France
A SubD-25 pins-connector has been irradiated using electron beams to evaluate the charging kinetics and risks of discharges induced by floating pins. Current and potential have been measured and correlate with simulation performed with SPIS-IC.
Study of Albedo Neutron Fields and their Impacts on SER as Function Facility and Terrestrial Topologies G. Hubert, L. Artola ONERA, France
This work investigates experimentally the albedo neutron spectra and their SER impacts on 28- nm technology in using Californium sealed source. Scenes and topologies relatives to facility and terrestrial environment were considered
Effects of High-Energy Ion Beams on Double-interface CoFeB/MgO Ultrathin Films B. Wang1, Z. Wang1, K. Cao1, S. Yan1, Y. Zhao2, J. Liu3, P. Zhai3, G. Guo4, H. Zheng2, S. Yuan5, Y. Zhang1, W. Zhao1 1. Beihang University, China 2. Beijing Microelectronics Technology Institute, China 3. Chinese Academy of Science, China 4. China Institute of Atomic Energy, China 5. Tsinghua University, China
Effects of Ta/proton ions on double-interface CoFeB/MgO films were evaluated. The results indicated that the coercivity after Ta irradiation was decreased. Whereas the films were resistant to proton irradiation. We proposed physical and structural analysis.
Modeling Single-Event Effects in Heterojunction Bipolar Transistors from 14 MeV Neutrons M. Jasica, W. Wampler, G. Viskelethy, E. Bielejec Sandia National Laboratories, USA
Effects from 14 MeV neutron collisions in GaAs are modeled from ionizing and non-ionizing energy loss recoil spectra. Measured inverse gain changes from single displacement cascades were found to agree well with the model.
Total Ionization Dose Effects of N-type Tunnel Field Effect Transistor (TFET) with Ultra-shallow Pocket Junction J. Bi 1, J. Chu1, G. Xu1, B. Li1, K. Xi1, H. B. Wang2, M. Liu1, S. Majumdar3 1. IMECAS, China 2. Hohai University, China 3. The ICFAI University, India
N-type tunnel transistor with an ultra-shallow N+ pocket junction has been fabricated. Total ionizing dose (TID) effects on TFET were investigated by 60Co γ-rays. In general, the TFETs exhibit excellent anti-radiation performance up to 1 Mrad(Si).
Dose Response of MOS Transistors Irradiated at Low Temperatures J. Dardié1, J. Boch2, A. Michez2, A. Touboul2, J. Vaillé2, F. Saigné2, F. Bezerra3, P. Girones4, J. Favre5 1. TMI-Orion and IES, France 2. IES, France 3. CNES, France 4. CEA, France 5. TMI-Orion, France
The effect of dose on MOS transistors is investigated for irradiation performed at low temperatures. Degradation of threshold voltage and drain off-state current is shown and discussed in terms of physical mechanisms.
Observation of Radiation Induced Leakage Current Defects in MOS Oxides with Multi-Frequency Electrically Detected Magnetic Resonance S. Moxim1, J. Ashton1, P. Lenahan1, S. King2 1. Penn State University, USA 2. Intel Corporation, USA
We report high and low frequency electrically detected magnetic resonance measurements on radiation induced leakage currents in irradiated Si/SiO2 MOS structures.
Probing Ion Radiation Effects in Si Crystal by 3D Integrated Resonating Diaphragms H. Chen1, H. Jia1, M. McCurdy2, R. Reed2, R. Schrimpf2, P. Hung3, M. Alles2, P. Feng1 1. Case Western Reserve University, USA 2. Vanderbilt University, USA 3. Aerospace Corporation, USA
Vertically-stacked vibrating Si diaphragms were exposed to 10.25 MeV oxygen ion flux (5.6 ×1013/cm2). Different types and magnitudes of radiation effects (ionization, displacement) are simultaneously probed via multimode redshifts (up to 27%) in different layers.
Silicon Carbide (SiC) Nanoelectromechanical Antifuses Operating in Radiation and High-Temperature Environments V. Pashaei1, H. Chen1, C. Arutt2, W. Liao2, M. McCurdy2, R. Reed2, R. Schrimpf2, M. Alles2, P. Feng1 1. Case Western Reserve University, USA 2. Vanderbilt University, USA
Silicon carbide (SiC) nanoelectromechanical antifuses are exposed to harsh environments, including proton, X-ray irradiations, and high temperature up to 500°C. The antifuses remain robust in these harsh environments.
Investigation of X-Ray Irradiation Effects on Graphene Nano-Disc Non-Volatile Memory K. Xi1, J. Bi1, Y. Xu1, Y. Li1, X. Zhang1, C. Jiangwei1, M. Liu1, C. Liang2 1. Chinese Academy of Sciences, China 2. Maxim Integrated Product Inc., USA
Graphene nano-disc non-volatile memory (GND-NVM) is a promising novel device based on two-dimensional materials. This work investigates the X-ray induced total ionizing dose effects on GND-NVM device and the impact of gate bias during irradiation.
Proton Radiation Effects on InGaAs/InP SPADs A. Tosi1, F. Signorelli1, M. Sanzaro1, A. Giudice2, M. Bagatin3,5, S. Gerardin3,5, M. Zahidy4, G. Vallone4,5, P. Villoresi4,5 1. Politecnico di Milano, Italy 2. Micro Photon Device Srl, Italy 3. DEI - Padova University and INFN-PD, Italy 4. University of Padova, Italy 5. Istituto Nazionale di Fisica Nucleare, Italy
We present an experimental study of proton radiation effects on the performance of InGaAs/InP Single Photon Avalanche Diodes, used in space communications and remote sensing applications, where single-photon detectors for the near-infrared wavelengths are required.
Comparison of 1D and 3D Electric Field Enhancement Analytical Models to Calculate the Dark Current Non-Uniformity K. Lemiere, C. Inguimbert, T. Nuns ONERA, France
A three-dimensional electric field enhancement model is proposed for our Monte Carlo tool used to calculate the dark current non-uniformity, in order to better estimate the hot pixels number in the distribution tail.
Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage P. Goley1, M. Frounchi1, G. Tzintzarov1, N. Dodds2, N. Nowlin2, J. Cressler1 1. Georgia Institute of Technology, USA 2. Sandia National Laboratories, USA
Waveguide-integrated p-i-n germanium-on-silicon photodiodes, from a commercial silicon-based integrated photonics platform, were exposed to fast neutron irradiation. The devices are experimentally shown to be highly resilient to displacement damage
Performances of Radiation-Hardened Single-Ended Raman Distributed Temperature Sensors Using COTS Fibers A. Morana1, S. Girard1, E. Marin1, A. Cebollada2, G. Mélin3, A. Champavere2, T. Robin3, A. Alessi1, A. Boukenter1, Y. Ouerdane1 1. Laboratoire Hubert Curien, France 2. Viavi Solutions, France 3. iXBlue Photonics, France
We investigate the performances of a radiation-hardened single-ended Raman Distributed Temperature Sensor by combining it with commercial fibers. Such a RDTS presents several advantages with respect to a classical single-ended or a double ended sensor.
Proton Irradiation Effect on High Efficient Organic-Inorganic Metal Halide Perovskite Solar Cell X. Zhang1, L. Wang1, B. Li1, C. Liang2, H. Zhang2, C. Ji2, F. Sun2, J. Yang3, X. Li3, J. Gao1, B. Li1, M. Liu1, Y. Huang1, J. Luo1, Z. Han1, X. Liu1 1. Chinese Academy of Sciences, China 2. Beijing Jiaotong University, China 3. Harbin Institute of Technology, China
Through 50 keV proton irradiation, the tolerance of perovskite solar cell and the internal physical mechanism after irradiation were studied in detail by various optical testing methods.
A Radiation-Tolerant D Flip-Flop Designed for Low-Voltage Applications G. Poe1, J. Kauppila1, D. Ball2, K. Warren2, B. Bhuva1, T. Haeffner2, L. Massengill1 1. Vanderbilt University, USA 2. Institute for Space and Defense Electronics, USA
A low-voltage robust D flip-flop is presented that targets a middle ground in radiation hardness and electrical performance between existing DICE flip-flop designs and unhardened commercial flip-flop designs.
RHBD Sub-Sampling Phase-Locked Loop in 32 nm PD-SOI E. Richards1, J. Kauppila1, T. Loveless2, T. Haeffner1, W. Holman1, L. Massengill1 1. Vanderbilt University, USA 2. University of Tennessee at Chattanooga, USA
This work presents a RHBD 15 GHz quadrature phase-locked loop in a 32nm SOI technology. Component and loop level hardening techniques are integrated into a sub-sampling architecture for robust noise and radiation performance.
A SET-tolerant High-frequency Multi-biased Multiphase Voltage-Controlled Oscillator for Phase Interpolator-based Clock and Data Recovery H. Yuan1, B. Liang1, J. Chen1, Y. Chi1, Y. Guo1, T. Liu2, B. Ye2, G. Guo3, Y. Ma4 1. National University of Defense Technology, China 2. Heavy Ion Research Facility at Lanzhou, China 3. China Institute of Atomic Energy, China 4. Chinese Academy of Sciences, China
A high-frequency multi-biased multiphase voltage-controlled oscillator applied to clock and data recovery is proposed. The operating frequency of the Voltage-Controlled Oscillator ranges from 2.1 GHz to 5.5 GHz. Ion experiments show SET tolerance under LETs of 83.7 MeVcm2/mg.
Using SEU Mitigation Techniques to Improve SER Performance of FPGA-based Networking Systems H. Rowberry, A. Keller, M. Wirthlin Brigham Young University, USA
Terrestrial radiation causes failures in FPGA-based networking systems. In neutron radiation testing, an example system demonstrates a 5.1x improvement in reliability using TMR and demonstrates a 6.6x improvement in detectability using duplication with compare.
High Total Ionizing Dose Effects on a Column Parallel Radiation Hardened Single-Slope-Analog-to-Digital Converter S. Rizzolo1, V. Goiffon1, F. Corbière1, S. Rolando1, P. Paillet2, C. Marcandella2, P. Magnan1, M. Van Uffelen3, L. Mont Casellas3, R. Scott4, W. De Cock5 1. ISAE SUPAERO, Université de Toulouse France 2. CEA, DAM, DIF, France 3. Fusion for Energy (F4E), Spain 4. Oxford Technologies Ltd. (OTL), United Kingdom 5. SCK-CEN, Belgium
TID effects on 26-to-95 column-parallel-10-bit-single-slope-ADCs up to 100 Mrad(SiO2) are investigated on several manufacturing lots. Input range degradation and random digital failures are reported despite the use of RHBD techniques. Remaining issues root causes are discussed.
Silicon Carbide Power MOSFETs Under Neutron Irradiation: Failure In Time Demonstration and Long Term Reliability Degradation Evaluation K. Niskanen1, A. Touboul2, R. Germanicus2, A. Michez1, F. Wrobel1, J. Boch1, V. Pouget1, P. Girones3, S. Morand4, O. Crepel4, C. Weulersse4, C. Binois4, F. Saigne1 1. University of Montpellier, France 2. ENSICAEN-CRISMAT Laboratory, France 3. CEA, France 4. Airbus, France
Silicon carbide power MOSFET sensitivity to single event effects under neutron irradiation was studied. Time dependent dielectric breakdown of the gate oxide was also investigated. Lower charge to breakdown values were observed for irradiated devices.
Application of Bayesian Methodology to Radiation Hardness Assurance and Spacecraft Reliability A. Coburger, J. Likar, C. Smith JHU APL, USA
Bayesian methods offer opportunities to reduce conservatism and uncertainties in RHA and reliability calculations. Methods are demonstrated using RLAT data and a LEO reference mission.
Design-of-Experiments and Monte-Carlo Methods in Upset Rate-Calculations D. Hansen Data Devices Corp., USA
This paper reports on the calculation of upset rates in geosynchronous orbit using design of experiments and Monte-Carlo approaches to the parameters available in CREME96. The implications for data collection are discussed.
Direct Ionization Impact on Accelerator Mixed-Field Soft Error Rate R. Garcia Alia1, M. Tali2, M. Brugger1, M. Cecchetto1, F. Cerutti1, S. Danzeca1, P. Fernandez Martinez1, S. Gilardoni1, A. Infantino1, M. Kastriotou1, N. Kerboub1, G. Lerner1, V. Wyrwoll1, V. Ferlet Cavrois3, C. Boatella-Polo3, A. Javanainen4, H. Kettunen4, R. Gaillard5, F. Wrobel6 1. CERN, Switzerland 2. CERN/ESA/University of Jyvaskyla, Switzerland 3. ESA, Netherlands 4. University of Jyväskylä, Finland 5. Consultant, France 6. University of Montpellier 2, France
The impact of charged particle direct ionization on the mixed-field accelerator soft-error rate is evaluated through experimental measurements and Monte Carlo simulations, showing that present technologies are at the limit of direct ionization dominance.
Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs R. Austin1, B. Sierawski1, R. Reed1, R. Schrimpf1, K. Galloway1, D. Ball1, A. Witulski1 1. Vanderbilt University, USA
Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length