Searching for the Building Blocks of Life in Planet-Forming Regions around New Stars Dr. Greg Doppmann, W.M.Keck Observatory
One of the biggest questions that faces humanity is whether life exists elsewhere in the galaxy. Now with over 3000 extra-solar planets confirmed, our chances of finding new worlds that could sustain life is a real possibility. Water and organic compounds are critical sign posts for life as we know it, and if such pre-biotic molecules prove to be ubiquitous in proto-planetary environments, then the potential for life could be great. By utilizing the large collecting area of the Keck II telescope and its world-renown facility spectrograph, NIRSPEC, Greg characterizes the composition and dynamics of nearby planet-forming disks using spectroscopy. In his talk, he will explain the spectroscopic techniques he uses to detect and quantify water vapor and organic compounds, as well as differentiate the gas and dust components in the disks of objects residing outside our solar system. Greg will put his results in the context of other work going on in the field today and the implications for the future development of life from these primordial extra-solar systems.
Dr. Greg Doppmann is a Support Astronomer at the W.M. Keck Observatory, which operates two 10-meter optical/infrared telescopes located at the summit of Maunakea on the Big Island of Hawaii. After receiving his Ph.D. in Astronomy from the University of Texas at Austin in 2002, Greg spent 2 years as a National Research Fellow at NASA’s Ames Research Center in the Bay Area. In 2004, he moved down to Chile to join the scientific staff at the Gemini Observatory. Returning to the US in 2007, Greg worked at the National Optical Astronomy Observatory until finally settling in Hawaii in 2011. Throughout his career, Greg’s research has been focused the formation of stars and planets, where he specializes in high-resolution infrared spectroscopy of protostars and proto-planetary disks that surround them.
SESSION I 9:25 AM Monarchy Ballroom
BASIC MECHANISMS OF RADIATION EFFECTS SESSION INTRODUCTION Chair: Cory Cress, Naval Research Laboratory
I-1 9:30 AM
Dopant-Type and -Concentration Dependence of Total-Ionizing-Dose Response in Piezoresistive Micromachined Cantilevers C. N. Arutt, M. L. Alles, J. L. Davidson, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University; P. D. Shuvra, J.-T. Lin, B. W. Alphenaar, K. M. Walsh, S. McNamara, University of Louisville
Total-ionizing-dose-induced resonance frequency shifts in piezoresistive, micromachined cantilevers depend on dopant type and concentration, as well as dose-rate. Mechanisms connecting frequency and resistivity shifts to carrier concentration changes are discussed.
I-2 9:45 AM
A Multi-Field and Frequency Electrically Detected Magnetic Resonance Study of Atomic Scale Defects in Gamma Irradiated Modern MOS Integrated Circuitry P. M. Lenahan, R. J. Waskiewicz, K. J. Myers, Pennsylvania State University; C. D. Young, University of Texas at Dallas
We utilize electrically detected magnetic resonance to explore radiation damage on an atomic scale in components of present day integrated circuitry. The components include FinFETs and low dielectric constant SiOC:H interlayer dielectrics.
I-3 10:00 AM
Effect of Pulse Length and Flux on the Defects and Gain Degradation in Pnp Si BJTs Irradiated with Helium Ions B. A. Aguirre, G. Vizkelethy, B. Vaandrager, W. J. Martin, E. Bielejec, Sandia National Laboratories; P. Seidl, A. Persaud, Q. Ji, B. Ludewigt, T. Schenkel, Lawrence Berkeley National Laboratory
We explore defects in the base-emitter junction of pnp Si BJTs under high flux irradiations. We found this produced localized annealing resulting in a higher number of VO defects and more effective recombination centers.
10:15 - 10:40 AM Grand Promenade
I-4 10:40 AM
Radiation Induced Defects in InAs/InAsSb Type-II Superlattices Characterized with Time-Resolved Microwave Reflectance and Density Functional Theory P. A. Schultz, C. N. Kadlec, E. Bielejec, M. D. Goldflam, J. K. Kim, J. E. Moussa, E. A. Shaner, Sandia National Laboratories
Displacement damage in proton-irradiated InAs/InAsSb superlattices is characterized through in situ time-resolved microwave reflectance, annealing and defect energies investigated through temperature-dependence and density functional theory, to provide chemical identification of defects.
I-5 10:55 AM
Effects of Proton Radiation-Induced Defects on Optoelectronic Properties of MoS2 A. W. Bushmaker, B. Foran, M. Peterson, C. Mann, The Aerospace Corporation; B. Wang, J. Chen, S. Yang, S. B. Cronin, The University of Southern California
We report on photoluminescence spectroscopy and transmission electron microscope imaging of the 2D semiconductor MoS2 before and after exposure to 100 keV proton radiation. The resulting changes cause by radiation damage are discussed.
SESSION J 11:10 AM Monarchy Ballroom
SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING SESSION INTRODUCTION Chair: Frederick Wrobel, Universite Montpellier
J-1 11:15 AM
Mechanisms of Electron-Induced Single Event Latchup M. Tali, University of Jyvaskyla, CERN, and ESA/ESTECR. Garcia Alia, M. Brugger, R. Corsini, W. Farabolini, CERN; V. Ferlet-Cavrois, G. Santin, C. Boatella Polo, ESA/ESTEC; A. Javanainen, A. Virtanen, University of Jyvaskyla
We discuss possible mechanisms by which electrons can induce Single Event Latchups in electronics and effect of presence of high-Z materials on this phenomenon. First experimental results are shown and future work is discussed.
J-2 11:30 AM
Understanding the Average Electron-Hole Pair Creation Energy in Silicon and Germanium from Full-Band Monte Carlo Simulations J. Fang, R. D. Schrimpf, R. A. Reed, R. A. Weller, S. T. Pantelides, Vanderbilt University; S. L. Weeden-Wright, Lipscomb University; M. V. Fischetti, The University of Texas at Dallas
The average electron-hole pair creation energies in silicon and germanium are examined by simulating carrier thermalization with full-band Monte Carlo techniques. Physical processes leading to these energies are identified.
J-3 11:45 AM
A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies J. S. Kauppila, D. R. Ball, J. A. Maharrey, R. C. Harrington, T. D. Haeffner, A. L. Sternberg, M. L. Alles, L. W. Massengill, Vanderbilt University
A single-event-enabled compact model for bulk FinFET technologies has been developed, incorporating bias dependence and geometry awareness. The compact model has been validated with heavy ion data over angle of incidence and bias.
J-4 12:00 PM
SEFI Modeling in Readout Integrated Circuit Induced by Heavy Ions at Cryogenic Temperatures L. Artola, G. Hubert, ONERA; S. Ducret, F. Advent, Sofradir; J. Mekki, CNES
This work presents a modeling approach of SEFI from the radiation particle down to the event in a ROIC. Simulation and experimental results of cross sections for heavy ions are presented and discussed.
J-5 12:15 PM
Ultra-Energetic Heavy Ion Beams in the CERN Accelerator Complex for Radiation Effects Testing R. Garcia Alia, P. Fernández Martínez, M. Kastriotou, M. Brugger, M. Cecchetto, F. Cerutti, N. Charitonidis, S. Danzeca, L. Gatignon, A. Gerbershagen, S. Gilardoni, J. Bernhard, N. Kerboube, M. Tali, V. Wyrwoll, CERN; V. Ferlet-Cavrois, C. Boatella, H. Evans, G. Furano, ESA; R. Gaillard, Consultant
UltraEnergetic heavy ion beams at CERN are evaluated through simulations and experimental data as a means of qualifying components against SEE, focusing on the impact of the energy on the ionization profile and nuclear reactions.