Hawaiian Volcanos Ken Hon, Professor of Geology, University of Hawaii at Hilo Cheryl Gansecki, Lecturer of Geology, University of Hawaii at Hilo
The Hawaiian Islands sit in the middle of the Pacific Ocean as far away from continents as is possible on Earth. Ken and Cheryl will tell the story of how the islands are built by massive volcanoes that rise 20-30,000 feet above the surrounding seafloor. Kīlauea Volcano is the most active volcano in the islands and one of most active volcanoes in the world. Cheryl and Ken will explain what drives eruptions of Kīlauea Volcano and how lava flows contribute to the growth of Hawaiʻi Island. Cheryl will show a video of some of the spectacular eruptive events over the past 25 years, including the recent incursion of lava into the outskirts of the town of Pāhoa.
Ken Hon and Cheryl Gansecki are volcanologists that live on the Big Island of Hawaiʻi. They have been studying and filming the eruptions of Kīlauea Volcano for over 25 years. Both speakers currently work at the University of Hawaiʻi at Hilo teaching about volcanoes, and they have previously worked for the U.S. Geological Survey. Their research focuses on the emplacement of lava flows, particularly on how pahoehoe lava flows move. Ken and Cheryl also work with the Hawaiian Volcano Observatory to document the changing chemistry of the eruption and what it tells us about changes in the magma chamber feeding the eruption. One of their long-term projects is the “Eruption Update,” an hour-long film that documents the changing eruption over the past 20 years. They are both avid volcano watchers and love to share their knowledge.
SESSION G 9:25 AM Monarchy Ballroom
SINGLE-EVENT EFFECTS; DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Megan Casey, NASA GSFC
G-1 9:30 AM
Terrestrial Neutron-Induced Single Event Burnout Cross-Sections for High-Voltage SiC Power MOSFETs D. Ball, B. Sierawski, K. Galloway, A. Witulski, R. Johnson, R. Schrimpf, A. Sternberg, R. Reed, Vanderbilt University; A. Javanainen, University of Jyvaskyla; J.-M. Lauenstein, NASA GSFC
Cross-sections for neutron-induced SEB are estimated using a novel method based upon integration of bias-dependent sensitive volumes, secondary particle production, and heavy ion SEB data. These results explain neutron-induced SEB data.
G-2 9:45 AM
Radiation Response of AlGaN HEMTs M. J. Martinez, M. P. King, A. G. Baca, A. A. Allerman, A. A. Armstrong, B. A. Klein, E. A. Douglas, R. J. Kaplar, S. E. Swanson, Sandia National Laboratories
We present heavy ion and proton data on AlGaN high-voltage HEMTs showing Single Event Burnout, Total Ionizing Dose, and Displacement Damage responses. These are the first such data, showing burnout thresholds and their mitigation.
10:00 - 10:25 AM Grand Promenade
G-3 10:25 AM
Effects of Process Variations on Single-Event Upset Cross-Section for Conventional D-Flip-Flop Designs H. Zhang, H. Jiang, J. S. Kauppila, B. L. Bhuva, W. T. Holman, L. W. Massengill, Vanderbilt University; B. Narasimham, Broadcom Corporation
Effects of process variations, as seen through power-on state preference of FF cells, on alpha-particle-induced SEU responses for D-FF in a 16-nm bulk FinFET technology are experimentally characterized.
G-4 10:40 AM
Soft Error Scaling in 3D Tri-Gate Transistor Technologies N. R. Seifert, S. M. Jahinuzzaman, R. Ascazubi, A. Neale, S. K. Sekwao, Intel Corporation
In this work, we discuss radiation-induced soft error rate improvements from 1st generation 22nm to 3rd generation 10nm Tri-Gate transistor technologies. Measured trends are interpreted using calibrated physics-based simulations and laser testing.
SESSION H 10:55 AM Monarchy Ballroom
SINGLE-EVENT EFFECTS: TRANSIENT CHARACTERIZATION SESSION INTRODUCTION Chair: Andrew Kelly, BAE Systems
H-1 11:00 AM
SET Sensitivity of Tri-Gate Silicon Nanowire Field-Effect Transistors M. Raine, M. Gaillardin, M. Martinez, O. Duhamel, J. Riffaud, T. Lagutere, C. Marcandella, P. Paillet, N. Richard, DAM, CEA; M. Vinet, F. Andrieu, S. Barraud, DRT, CEA
The SET response of SOI tri-gate nanowires is investigated using direct measurements of current transients. Resulting collected charge distributions are compared to Monte-Carlo simulations of deposited energy.
H-2 11:15 AM
Analysis of Combined SET and SEU Data to Extend Transient Pulse Detection below the Logic Capture Threshold R. C. Harrington, J. S. Kauppila, J. A. Maharrey, T. D. Haeffner, E. X. Zhang, D. R. Ball, P. Nsengiyumva, M. L. Alles, B. L. Bhuva, L. W. Massengill, Vanderbilt University
A novel method is presented to enhance SET measurements, overcoming a common limitation of minimum measurable pulse widths. Using SEU data to extend pulse width acuity, pulses shorter than the logic capture threshold are measured.
H-3 11:30 AM
Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs A. Ildefonso, Z. E. Fleetwood, G. N. Tzintzarov, M. Frounchi, J. Harms, A. Erickson, J. D. Cressler, Georgia Institute of Technology; J. M. Hales, A. Khachatrian,, Naval Research Laboratory and Sotera Defense; S. P. Buchner, D. McMorrow, J. H. Warner, Naval Research Laboratory
An approach for determining the optimal laser parameters to correlate single-event transients induced via two-photon absorption and heavy ions is presented. This method relies on matching waveform characteristics between laser and ion measurements.
H-4 11:45 AM
Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using X-Rays A. Khachatrian, Sotera Defense Solutions; N. J.-H. Roche, University of Montpellier; C. Affouda, S. Buchner, A. D. Koehler, T. J. Anderson, K. D. Hobart, D. McMorrow, NRL; S. D. LaLumondiere, W. T. Lotshaw, Aerospace Corporation; D. L. Brewe, Argonne National Laboratory
Single-Event Transients are generated with focused, pulsed x-rays in a MIS-gate AlGaN/GaN HEMT. Measured transients reveal current flow between source and drain, in sharp contrast to measurements on Schottky-gate HEMTs.
12:00 - 1:30 PM
Lunch with Women in Engineering (WIE) Presentation (Ticket Required to Attend)
SESSION INTRODUCTION Chair: Martha O'Bryan, AS&D, Inc.
Single-Event Latchup Measurements on Wireless and Powerline Network Communication Devices for Use in Mars Missions F. Irom, S. Vartanian, G. R. Allen, JPL
This paper reports recent single-event latchup results for a variety of microelectronic devices that include Wireless and Powerline Network Communication devices. The data were collected to evaluate these devices for use in NASA missions.
NASA Goddard Space Flight Center’s Compendium of Recent Single Event Effects Results M. V. O'Bryan, E. P. Wilcox, C. M. Szabo, M. D. Berg, AS&D, Inc.; K. A. LaBel, M. J. Campola, M. C. Casey, J-M. Lauenstein, J. A. Pellish, NASA GSFC; D. Chen, Analog Devices Inc.; E. J. Wyrwas, Lentech, Inc.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
NASA Goddard Space Flight Center’s Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results A. D. Topper, E. P. Wilcox, N. D. Burton, D. J. Cochran, M. V. O’Bryan, AS&D, Inc.; M. C. Casey, M. J. Campola, K. A. LaBel, NASA GSFC
Total ionizing dose and displacement damage dose testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
2018 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics S. Danzeca, P. Peronnard, G. Foucard, G. Tsiligiannis, R. Ferraro, G. Piscopo, C. G. Mcallister, M. Brugger, A. Masi, S. Gilardoni, CERN
The sensitivity of a variety of components for particle accelerators electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital and mixed devices.
Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission A. N. Bozovich, B. G. Rax, A. J. Kenna, D. Nguyen, J. Davila, J. L. Thomas, L. Z. Scheick, JPL
This paper reports recent total ionizing dose (TID) test results for a variety of common part types evaluated for use on NASA/JPL’s Europa Clipper mission.
SEE and TID Testing of Components for the Near InfraRed Airglow Camera (NIRAC) S. C. Davis, D. J. Mabry, R. Koga, J. S. George, The Aerospace Corporation
We performed SEE and TID testing on select electronic parts used for the upcoming Near InfraRed Airglow Camera (NIRAC) mission to the International Space Station.
Compendium of Ball Aerospace TID Test Results B. Griffiths, T. R. Oldham, C. Whitney, Ball Aerospace
We have conducted TID and DDD Tests on a variety of parts intended for application in different Ball Aerospace space systems. Results and discussion are presented.
Recent Results for Commercial Microprocessor Testing H. Quinn, A. Watkins, Y. Chen, F. Tom, S. Terra, R. Eric, LANL
Commercial microprocessors could be useful for many space missions that require low-power but not radiationhardened computing support. We present data on recent testing of several commercial microprocessors.
SEE Characteristics of COTS Devices by 1064nm Pulsed Laser Backside Testing Y. Ma, R. Chen, J. Han, Chinese Academy of Sciences; S. Shangguan, Z. Xiang, University of Chinese Academy of Sciences
This summary presents SEU and SEL characteristics of commercial-off-the-shelf (COTS) devices by laser backside testing method. The SEU threshold and micro latchup for the deep sub-micron devices are investigated.
Heavy-Ion Test Results of Several Commercial Components for Use in a JPL Class D Interplanetary Mission Payload A. C. Daniel, G. R. Allen, JPL
This paper presents recent heavy ion single-event effects test results for commercial off the shelf devices. Data was taken in CY17 for device evaluation for use in a Class D NASA interplanetary mission payload.
Results of Recent SEE Testing of GaAs Based RF Communication Components S. E. Stone, D. A. Clymer, O. Amusan, L. Mason, E. Beach, K. Huntington, Lockheed Martin Space; T. Turflinger, The Aerospace Corporation
This paper examines DSEE in RF GaAs components and while many low power components demonstrated immunity, the work shows the need to establish SOAs while considering all aspects of design space in high power applications.
Investigation of a High Power COTS Solution for Space L. Z. Scheick, S. Vartanian, JPL
Investigation into a possible high power MOSFET solution for switching applications in space is presented. The trends of SEE voltage as a function of device parameters are analyzed.
Compendium of Recent Neutron Testing of Electronic Parts at Los Alamos National Laboratory T. Fairbanks, A. Watkins, C. Safi, M. Dale, Los Alamos National Laboratory
Los Alamos National Laboratory has been testing COTS electronic parts for potential use in small spacecraft and high altitude telemetry systems. Results of neutron testing for SEE are presented. TID testing is planned.
Calibration Stability and Beam Dynamics at the BASE Facility of the 88-Inch Cyclotron at LBNL A. Donoghue, L. Phair, M. B. Johnson, B. Ninemire, S. Small, T. L. Gimpel, LBNL
An investigation is made into the stability of the fluence measurement accuracy over an extended time period. Beam profile fitting is performed to illuminate the underlying causes of changes in the fluence measurement accuracy.
A Five-Year Compendium of Proton Test Usage Patterns at the Francis H. Burr Proton Therapy Center E. W. Cascio, Francis H. Burr Proton Therapy Center at Massachusetts General Hospital
There has been considerable recent interest in the requirements for a proton radiation test program. We present here a five-year detailed analysis of the actual requirements of the users of our proton test services.
Facility for Heavy-Ion Irradiation of Semiconductors at RIKEN RI-Beam Factory T. Kambara, A. Yoshida, RIKEN Nishina Center
RIKEN RIBF provides fast Kr and Ar ions for the SEE evaluations of space-use semiconductors. We present the irradiation facility, measurements of the dose and LET, and radiochemical analyses of secondary-beam impurity.
The Los Alamos Neutron Science Center High-Energy and Low-Energy Neutron Sources for Semiconductor Testing S. F. Nowicki, S. A. Wender, LANL
We describe the Los Alamos Neutron Science Center (LANSCE) high-energy and low-energy neutron sources for testing of electronic devices. Both sources are driven by the 800-MeV proton beam from the LANSCE accelerator.
Radiation Hardness Assurance for a COTS-Based Power Converter for Accelerator Applications J. Braun, J. Chanois, V. R. Herrero, L. L. Foro, Y. Thurel, CERN
This presents the pragmatic strategy used for the RHA of a LHC Power Converter. An extensive test campaign on COTS have been performed as well as a system level testing of an entire sub-converter.
Simplified Procedures for COTS TID Testing: a Comparison Between Sr-90 and Co-60 A. Menicucci, Delft University of Technology; F. Malatesta, S. Di Mascio, M. Ottavi, University of Rome Tor Vergata; F. Di Capua, L. Campajola, P. Casolaro, University of Naples Federico II; G. Furano, ESA/ESTEC
We propose 90Sr source as an alternative for SoC TID testing. We compare 60Co and 90Sr experimental results showing that 90Sr allows a simpler test-setup, yet reproducing specific failure modes at comparable total doses.
Radiation Hardness Qualification of the Amplifier/Discriminator ASICs Production for the Upgrade of the LHCb RICH Detector Front-End Electronics M. Fiorini, M. Andreotti, W. Baldini, M. Bolognesi, R. Calabrese, A. Cotta Ramusino, E. Luppi, R. Malaguti, L. Minzoni, L. Pappalardo, L. Tomassetti, University of Ferrara and INFN Sezione di Ferrara; M. Baszczyk, A. Giachero, C. Gotti, M. Maino, G. Pessina, AGH University of Science and Technology and INP; P. Carniti, L. Cassina, P. Dorosz, W. Kucewicz, University of Milano Bicocca and INFN Sezione di Milano Bicocca
Thirty-three-thousand CLARO8 ASICs were produced in 0.35μm CMOS technology and will be installed in the upgraded LHCb detector at CERN. Radiation hardness has been extensively characterized and compared to prototype production.
Study of Radiation Effects on the Single-Photon Sensitive Opto-Electronics Chain for the RICH Detector Upgrade of the LHCb Experiment at CERN L. Tomassetti, University of Ferrara and INFN
The LHCb RICH detector upgrade is based on photomultipliers and electronics capable of detecting single-photons at 40 MHz repetition rate. Test of radiation hardness of the complete chain, from optics to electronics, is presented.
Radiation Test of a BLDC Motor Driver Component H.-J. Sedlmayr, A. Beyer, K. Kunze, M. Maier, Institute of Robotics and Mechatronics, German Aerospace Center (DLR)
Robotic systems will become in the future of space exploration an important technology, whereby brushless motor drives are used for locomotion and manipulation. This paper presents the radiation test results of a COTS motor driver.
Guidance on Standardizing GPU Radiation Test Approaches E. J. Wyrwas, Lentech, Inc.; K. A. LaBel, M. J. Campola, NASA GSFC; M. V. O’Bryan, AS&D, Inc.
A standardized test method has been created to characterize and stress graphics processing units (GPU) during radiation effects testing.
Total Dose and Single-Event Effects Testing of the Intersil ISL70321SEH Power Supply Sequencer N. W. van Vonno, O. A. Mansilla, S. D. Turner, W. H. Newman, L. G. Pearce, E. J. Thomson, Intersil
We report the results of total ionizing dose (TID) and destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL70321 power supply sequencer, together with a brief functional description of the part.
Verify the Radiation Performance of TI MCU TMS570LS3171 with Pencil Proton Beam Scanning in the Proton and Radiation Therapy Center of CGMH, Taiwan C.-H. Lin, Academia Sinica; S.-C. Yang, K.-C. Han, National Chung Shan Institute of Science and Technology; Y.-C. Tsai, C.-Y. Pan, Chang Gung Memorial Hospital; T.-C. Chao, C.-C. Lee, Chang Gung University
We present results of TI TMS570LS3171 radiation test with 200 MeV scanning proton beam in CGMH, Taiwan. The total delivered fluence is 1.425x1011 proton/cm2. No single-event latch up event is observed.
Single Event Upset Results from the Radiation Hardened Electronic Memory Experiment on the International Space Station D. R. Alexander, A. Vera, G. Urbaitis, C. Li, University of New Mexico; W. Morris, Silicon X; J. Christian, Radiation Monitoring Devices Inc.; D. Gifford, Vorago Technologies; K. Avery, Air Force Research Laboratory
Results are presented from the Radiation Hardened Electronic Memory Experiment (RHEME) performed on the International Space Station (ISS).
Prospect of State-of-the-Art Flash Chips for Dosimetry Application L. Davies, P. Kumari, N. P. Bhat, B. Ray, University of Alabama in Huntsville
Fail-bit response of commercial 20 nm Flash chip is measured at low doses. Results show promise for Flash chips for dosimetry applications in the 0.1 to 10 krad(SiO2) range.
Evaluation of Total Ionizing Dose Effects on Commercial FRAMs M. Slimani, J.-M. Armani, CEA Saclay LIST/DACLE; R. Gaillard, Consultant
This work evaluates the sensitivity of two commercial FRAMs to total ionizing dose. Functional failure analysis and current measurements under gamma radiation have been performed. Annealing responses at room temperature have also been reported.
Total Ionizing Dose Measurements and Associated Non-Destructive Screening Methodology of a Commercial Samsung NAND Flash Memory for a High Dose Mission G. R. Allen, F. Irom, D. N. Nguyen, L. Z. Scheick, S. Vartanian, S. S. McClure, K. Stanford, JPL
We present TID measurements of a commercial Samsung NAND flash memory intended for use on a high dose mission. Statistical variation necessitated implementing a screening method to predict likelihood of specific failure modes.
Radiation Performance of a Flash NOR Device D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson, Data Devices Corp.
We present the results of single-event effects (SEE) and total ionizing-dose (TID) testing performed on the die used in DDC’s 56F64008 flash-NOR devices
SEL/SEU/SEFI/TID Results of the Radiation Hardened DDR3 SDRAM Memory Solution P.-X. Wang, P. Kohler, 3D Plus; M. Herrmann, T. Fichna, Institut fur Datentechnik und Kommunikationsnetze
We present the radiation test results of a RHBS DDR3-SDRAM Memory solution. The hard errors (TID/SEL) guaranteed and verified at die level, and soft errors (SEU/SEFI) guaranteed and verified at system level.
SEE Sensitivity Changes in ISSI DDR2 Memories S. M. Guertin, A. N. Bozovich, JPL
SEE evaluation of a new revision of ISSI DDR2 devices shows a significant increase in low LET SEFI behavior while SBU sensitivity increases somewhat.
Total Ionizing Dose Assessment of a Commercial 200V PMOSFET R. J. Aniceto, MIT and Facebook Connectivity Lab.; R. Milanowski, M&A Associates; N. Hall, J. Shields, B. Vermiere, Space Micro, Inc.; S. Moro, Facebook Connectivity Lab.; K. Cahoy, MIT
Commercial 200V PMOSFETs were TID tested to 100 krad(Si). Data were obtained for OFF state and ON state bias conditions. Moderate threshold voltage shifts observed; ON state drain-source resistance values are stable.
Total Dose Performance at High and Low Dose Rate of CMOS and Bipolar Voltage References D. M. Hiemstra, V. Kirischian, MDA; X. X. -T. Li, L. Chen, Univeristy of Saskatchewan
Results of Cobalt-60 irradiation of CMOS and bipolar voltage references at high and low dose rates are presented. Performance in the space radiation environment is discussed.
Guide to the 2017 IEEE Radiation Effects Data Workshop Record D. M. Hiemstra, MDA
The 2017 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.
Part II: Single Event Upset Characterization of the Kintex UltraScale Field Programmable Gate Array Using Proton Irradiation D. M. Hiemstra, V. Kirischian, MDA
Proton induced SEU cross-sections of additional functional blocks of the Kintex UltraScale FPGA are presented. Extending results previously reported. Upset rates in the space radiation environment are estimated.
Single-Event Characterization of Xilinx UltraScale+ MPSOC under Standard and Ultra-High Energy Heavy-Ion Irradiation M. Glorieux, A. Evans, T. Lange, A.-D. In, D. Alexandrescu, IROC Technologies; C. Boatella-Polo, C. Urbina-Ortega, V. Ferlet-Cavrois, ESTEC, ESA; R. Garcia Alia, M. Kastriotou, P. Fernández-Martínez, CERN
Heavy-Ion irradiation of a Xilinx Ultrascale+ MPSOC was performed to measure Single-Event-Latch-up and Single-Event-Upset Cross-Sections. Additionally, irradiation with a ultra high energy xenon beam shows similar upset sensitivity.
Xilinx UltraScale+ MPSoC Single-Event Upset Neutron Radiation Beam Results J. D. Anderson, J. Leavitt, M. Wirthlin, Brigham Young University
The paper summarizes the SEU results obtained from neutron testing on the UltraScale+ ZU9EG MPSoC; specifically FPGA CRAM, scrubbing approaches, and processor SEU results for the OCM, caches, and software benchmarks.
Single-Event Evaluation of Xilinx 16nm UltraScale+TM Single Event Mitigation IP (SEM-IP) P. Maillard, M. J. Hart, P. Chang, Y. P. Chen, M. Welter, R. Le, R. Ismail, J. Barton, E. Crabill, Xilinx, Inc.
The single-event response of Xilinx 16nm UltraScale+™ SEM IP and Stacked-Silicon-Interconnect (SSI) technology is characterized using a 64 MeV proton source. Single-event upset and multi-bit upset results are presented.
Test Methodology & Neutron Characterization of Xilinx 16nm Zynq® UltraScale+TM Multi-Processor System-on-Chip (MPSoC) P. Maillard, J. Arver, C. Smith, O. B. Ballan, M. J. Hart, Y. P. Chen, Xilinx, Inc.
This paper presents a test methodology to characterize the single event response of Xilinx’s 16nm Zynq Ultrascale+ ARM core processors using Xilinx System Validation Tool (SVT) design suite. Single-event results are presented.
Neutron and Proton Characterization of Microsemi 28 nm PolarFire SONOS-Based FPGA N. Rezzak, J.-J. Wang, S. Varela, G. Bakker, A. N. Gu, Microsemi
The Single-Event response of Microsemi 28 nm PolarFire SONOS-based FPGA is characterized using neutron and 64 MeV proton sources. Single-Event Latchup, Single Event Upset and Single Event Functional Interrupt results are presented.
Total Dose and Single-Event Effects Testing of the Intersil ISL70591SEH and ISL70592SEH Current Sources W. H. Newman, N. W. van Vonno, B. Williams, A. Robinson, L. G. Pearce, O. Mansilla, S. D. Turner, E. J. Thomson, Intersil
We report the results of total ionizing dose (TID) and destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL7059xSEH, 100μA and 1mA precision current sources.
Radiation Effects Characterization of an Arm®-Based 32-Bit Microcontroller M. Von Thun, A. Wilson, B. Baranski, R. Anderson, A. Turnbull, Cobham Semiconductor Solutions
A highly flexible radiation-hardened UT32M0R500 Arm® Cortex® M0+ 32-bit microcontroller has been designed, manufactured, and characterized for radiation effects. The radiation effects results will be presented.
Test Results of Radiation Hardened iCoupler Products from Analog Devices E. Xiao, D. Guy, B. Barfield, C. Cherry, K. Brown, T. Decker, Analog Devices Inc.
Heavy ion SEE test and TID test results of three radiation-hardened new generation digital isolators from Analog Devices Inc. are presented, including two standard digital isolators and an isolated error amplifier.
Heavy Ion Test Results of Different Analog to Digital Converters, Transceivers and Drivers V. S. Anashin, A. E. Koziukov, S. A. Iakovlev, V. V. Lykov, T. S. Napolova, S. V. Kolpachkov, JSC URSC – ISDE; P. A. Chubunov, JSC URSC – ISDE and National Research Nuclear University (NRNU) Moscow Engineering Physics Institute (MEPhI)
The paper presents the single event effects test results for some of drivers, analog to digital converters and transceivers, which are candidate spacecraft electronics, obtained at Roscosmos Test Facilities during test campaigns in 2017.
Commercial off-the-Shelf MOSFETs SEE Test Results V. S. Anashin, A. E. Koziukov, S. A. Iakovlev, T. A. Maksimenko, K. B. Bu-Khasan, JSC URSC – ISDE; P. A. Chubunov, JSC URSC – ISDE and National Research Nuclear University (NRNU) Moscow Engineering Physics Institute (MEPhI)
Short test results for 18 different commercial power metal-oxide-semiconductor field effect transistors (MOSFETs) obtained at Russian SEE Test Facilities during test campaign in 2017 are presented.
Characterization of Widely Used Bipolar Transistors in Wide Temperature Range Before and After Ionizing Radiation Impact A. S. Bakerenkov, A. S. Rodin, V. A. Felitsyn, V. S. Pershenkov, N. S. Glukhov, V. V. Belyakov, National Research Nuclear University (NRNU) Moscow Engineering Physics Institute (MEPhI) ; A. E. Koziukov, JSC URSC – ISDE Institute of Space Device Engineering
The electrical characteristics of widely used bipolar transistors on temperature before and after ionizing radiation impact were investigated. The operation at low temperatures can be considered as the worst case for bipolar devices.
TID Response of AD590 Temperature Sensor in Wide Operation Temperature Range A. S. Bakerenkov, V. A. Felitsyn, A. S. Rodin, V. S. Pershenkov, B. I. Podlepetsky, V. V. Belyakov, E. V. Petkovich, National Research Nuclear University (NRNU) Moscow Engineering Physics Institute (MEPhI); A. E. Koziukov, JSC URSC – ISDE Institute of Space Device Engineering
Total ionizing dose response of AD590 temperature sensor was investigated in wide operation temperature range. Obtained results can be useful for designers of electronic devices for nuclear and space applications.
TID Effects in One Time Programmable Read Only Memory at Different Dose Rates A. S. Bakerenkov, S. B. Shmakov, V. A. Felitsyn, A. S. Rodin, A. G. Petrov, D. V. Boychenko, V. S. Pershenkov, V. A. Telets, National Research Nuclear University (NRNU) Moscow Engineering Physics Institute (MEPhI)
TID effects in 4 Mbit AT27 EPROM at different dose rates were investigated. The electrical characterization was performed at different power supply voltages to determine the correlation between a functional failure and corresponding parametric degradation.
Recent Test Results of Radiation Tolerant Products from Analog Devices D. Chen, T. Decker, N. Wendell, J. Harris, C. Xiao, Analog Devices Inc.; S. Rezgui, Previously with Linear Technology Corp.; S. Hart, Bastion Technologies Inc.; B. Horton, P. Musil, Anaren Inc.
We present total-ionizing dose and single-event effect test results of the latest radiation tolerant products from Analog Devices. Featured products include analog-to-digital converters, a broadband detector, and a step-down regulator.
Characterization of the Effects of Proton-Induced Total Ionizing Dose and Displacement Damage on the UC1708 Power Driver S. Messenger, M. Mishler, J. Hack, P. Dudek, Northrop Grumman Mission Systems
This paper explores combined effects of total ionizing dose and displacement damage caused by 250 MeV protons on the Texas Instruments UC1708 Power Driver. Fluences up to 1012 protons/cm2 were used for this test.
Low-Dose-Rate Cobalt-60 Testing Results for Kaman KD-5100 Differential Inductive Position Measuring Systems B. H. McGuyer, S. Moro, Facebook Inc.; R. J. Milanowski, Milanowski & Assoc., Inc.
We report Co-60 gamma radiation testing of a Kaman KD-5100 position-measuring system to a total ionizing dose of 10 krad(Si) at a rate of 5 mrad(Si)/s.
Measurement of Thermal Neutron Environments in Aircraft with the TinMan Instrument S. Wender, S. Nowicki, A. Couture, S. Mosby, N. Dallmann, K. McKeown, A. Warniment, D. Seitz, J. Lake, LANL; L. Dominik, Honeywell, Inc.
A neutron detector was developed to measure the thermal neutron environment in airplanes at flight altitudes. Results from the NASA ER-2, the NASA Gulfstream-III and the NASA DC-8 aircraft flights are presented.
Summary and Analysis of Neutron Displacement Damage Test Results T. R. Oldham, C. Whitney, G. Ben, Ball Aerospace
A summary of displacement damage sensitivity for bipolar components is presented. For discrete bipolar transistors, sensitivity to DDD correlates with ft. For more complex circuits, a summary of existing test data is presented.
Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation D. S. Lee, M. P. King, W. L. Evans, W. Rice, SNL; M. Cannon, A. Perez-Celis, J. Anderson, M. Wirthlin, Brigham Young University
This study examines the single-event response of Xilinx 16nm FinFET UltraScale+ device families. Heavy-ion latch-up, upsets in configuration SRAM, BlockRAM, and flip-flops, and neutron single-event latch-up results are provided
Radiation Evaluation of the TMP461-SP Radiation Hardened Remote and Local Digital Temperature Sensor R. Gooty, V. Narayanan, J. Cruz - Colon, R. Baumann, S. R. Viswanath, K. Kruckmeyer, Texas Instruments Inc.
Single Events Effect (SEE) characterization results for TMP461-SP Remote and Local Digital Temperature Sensor is summarized, showing SEL free up to LETeff = 76 MeVcm2/mg and have very low cross section for SET.
Total Ionizing Dose Characterization of a Custom Front-End SoC for Antenna Arrays in 32nm SOI CMOS A. Zanchi, M. Cabanas-Holmen, A. Amort, R. Brees, The Boeing Company
A full-custom SoC for signal digitization of 16-channel antenna arrays fabricated in 32nm SOI CMOS, including 3-bit 32GSps ADCs/2GSps DSP cores, showed no performance degradation after exposure to 1Mrad(Si) TID.
TID Testing of Microsemi Integrated Motor Controller LX7720 M. Sureau, R. Stevens, M. Leuenberger, N. Rezzak, D. Johnson, Microsemi
The TID testing results of the Microsemi radiation hardened analog mixed-signal motor controller IC, the LX7720, are presented.
Radiation Evaluation of the HVD233-SP CAN Bus Transceiver J. Cruz-Colon, V. Narayanan, W. Vonbergen, R. Roybal, R. Baumann, Texas Instruments
Single Events Effect (SEE) characterization results for HVD233-SP CAN Transceiver is summarized, showing very robust SEE performance up to LETeff=92 MeV-cm2/mg.
Radiation Effects Characterization of TI LMT01-SP High Accuracy 2-Pin Temperature Sensor V. Narayanan, R. Gooty, J. Cruz-Colon, K. Kruckmeyer, Texas Instruments
LMT01-SP is an accurate two pin Temp Sensor released for space applications. This device passed TID testing to 100 krad and was observed to be latchup immune up to 86 MeV-cm2/mg.
Hot-Carrier Effect on TID Irradiated Short-Channel 22nm FD-SOI N-MOSFETs J. Cui, Q. Zheng, Y. Wei, X. Yu, W. Lu, C. He, D. Ren, Q. Guo, Chinese Academy of Sciences; B. Ning, Fudan Microelectronics Group
The influence of total TID on hot-carrier effect of short channel FD-SOI n-MOSFETs is investigated. Experimental results show larger parameters degradation for irradiated devices due to irradiation generated defects in box layer.
Heavy Ion and Proton Induced Single Event Effects on Xilinx Zynq UltraScale+ Field Programmable Gate Array (FPGA) R. Koga, S. Davis, J. George, M. Zakrzewski, D. Mabry, The Aerospace Corporation
Zynq UltraScale+ field programmable gate arrays (FPGAs) were tested for single event effects with heavy ions and protons. SEEs such as SEU and SEL were detected. Destructive SELs were avoided.
Single Event Upset Characterization of the Stratix IV Field Programmable Gate Array Using Proton Irradiation D. M. Hiemstra, V. Kirischian, MDA; Q. Chen, L. Chen, University of Saskatchewan
Proton induced SEU cross-sections of certain functional blocks of the Stratix IV FPGA are presented. Upset rates in the space radiation environment are estimated.
Heavy Ion Bit Response and Analysis of 256 Megabit Non-Volatile Spin-Torque-Transfer Magnetoresistive Random Access Memory (STT-MRAM) R. R. Katti, Honeywell International, Inc.; S. M. Guertin, J. Y. Yang-Scharlotta, A. C. Daniel, R. Some, JPL
Recent heavy-ion test results from 256 Megabit Spin-Torque-Transfer Magnetoresistive Random Access Memory (STT-MRAM) shows response that is comparable to 16 Megabit Savtchenko/toggle-bit MRAM heavy-ion test results.