Opening Remarks Ron Lacoe, The Aerospace Corporation, General Chairman
Awards Presentation Allan Johnston, Radiation Effects Steering Group Executive Chair
Technical Session Opening Remarks Hugh Barnaby, Arizona State University, Technical Program Chairman
SESSION A 8:55 AM
RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Michael McLain, Sandia National Laboratories
A-1 9:00 AM
TID-Induced Leakage and Drive Characteristics of Planar 22-nm Partially-Depleted Silicon-on-Insulator and 14-nm Bulk and Quasi-Silicon-on-Insulator FinFET Devices M. P. King, T. Silva, M. R. Shaneyfelt, S. DiGregorio, W. C. Rice, B. L. Draper, Sandia National Laboratories; G. Massey, P. Oldiges, K. Rodbell, IBM; E. H. Cannon, J. Ballast, M. Cabanas-Holmen, The Boeing Company; D. Loveless, University of Tennessee at Chattanooga
PDSOI 22-nm technology shows order of magnitude reduction of TID-induced leakage over 32-nm. Improvement in the post-irradiation leakage of 14-nm FinFETs is comparable to 32-nm PDSOI.
A-2 9:15 AM
Total-Ionizing-Dose Effects in FinFETs at Low Temperature T. D. Haeffner, R. F. Keller, M. W. McCurdy, B. D. Sierawski, D. R. Ball, E. X. Zhang, M. L. Alles, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, Vanderbilt University
Bulk and SOI FinFETs irradiated with protons at 300 K and 89 K are functional with low leakage to at least 100 krad(SiO2). Radiation-induced narrow-channel effects are observed in each device type.
A-3 9:30 AM
Characterization and Modeling of GigaRad-TID-induced Drain Leakage Current in a 28 nm Bulk CMOS Technology C.-M. Zhang, F. Jazaeri, C. Enz, Ecole Polytechnique Federale De Lausanne; G. Borghello, CERN and University of Udine; F. Faccio, CERN; S. Mattiazzo, University of Padova; A. Baschirotto, INFN & University of Milano-Bicocca
We investigate the TID effects up to 1 Grad on the drain leakage current of 28 nm bulk nMOSFETs. DC characterizations demonstrate a significant leakage increase that is modelled efficiently by succinct physics-based models.
A-4 9:45 AM
Total Ionizing Dose Effects in 3D NAND Flash Memories M. Bagatin, S. Gerardin, A. Paccagnella, University of Padova; S. Beltrami, Vimercate (MB); A. Costantino, M. Muschitiello, A. Zadeh, V. Ferlet-Cavrois, ESA - ESTEC
The effects of total dose on 3D NAND Flash memories are investigated. The evolution of threshold voltage distributions and raw bit errors are studied versus dose, and the results are compared with planar Flash technologies.
A-5 10:00 AM
Effect of Radiation on the Classification Accuracy of a Neural Network Trained on Analog TaOx Resistive Memory Arrays R. B. Jacobs-Gedrim, D. R. Hughart, G. Vizkelethy, E. S. Bielejec, B. L. Vaandrager, S. E. Swanson, K. E. Knisely, M. J. Marinella, Sandia National Laboratories; J. L. Taggart, H. J. Barnaby, Arizona State University
The image classification accuracy of a TaOx ReRAM based neuromorphic computing accelerator is evaluated while intentionally inducing displacement damage to the devices. An effect on classification accuracy only occurred after ~5x1020 vacancies were produced.
10:15 AM - 10:55 AM Kohala Ballroom
SESSION B `10:55 AM Monarchy Ballroom
PHOTONIC DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Melanie Raine, CEA
B-1 11:00 AM
Dose and Single Event Effects on Color CMOS Camera for Space Exploration C. Virmontois, J.-M. Belloir, A. Bardoux, CNES; M. Beaumel, A. Vriet, SODERN; N. Perrot, C. Sellier, J. Bezine, D. Gambart, D. Blain, E. Garcia-Sanchez, W. Mouallem, 3D Plus
This paper focuses on the radiation-induced dose and single event effect on color CMOS camera designed for space missions.
B-2 11:15 AM
Radiation Induced Leakage Current in CMOS Image Sensor Floating Diffusion A. Le Roch, V. Goiffon, S. Rizzolo, F. Pace, C. Durnez, P. Magnan, CIMI, ISAE-SUPAERO; C. Virmontois, J.-M. Belloir, DSO/SI/CD, CNES; P. Paillet, DAM, CEA
Neutron and proton induced leakage current are investigated in CMOS image sensor floating diffusion for in pixel charge storage applications. High field effects on dark current are analyzed providing new insights on leakage current sources.
B-3 11:30 AM
Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels S. Rizzolo, V. Goiffon, F. Corbiere, R. Molina, A. Chabane, P. Magnan, Universite de Toulouse; S. Girard, A. Boukenter, T. Allanche, Universite de Lyon; P. Paillet, CEA, DAM, DIF; C. Muller, Universite de Lyon and CEA, DAM, DIF; C. Monsanglant Louvet, M. Osmond, H. Desjonqueres, IRSN; J.-R. Mace, New AREVA; P. Burnichon, J.-P. Baudu, OPTSYS; S. Plumeri, ANDRA
Through the comparison of several CMOS image sensor technologies (including partially pinned photodidiode), the influence of the manufacturing process on the radiation induced degradation is stated up to total ionizing doses of 1 MGy(SiO2).
B-4 11:45 AM
Radiation-Induced Effects on Fiber Bragg Gratings Inscribed in Highly Birefringent Photonic Crystal Fiber A. Morana, S. Girard, E. Marin, A. Boukenter, Y. Ouerdane, Universite de Saint-Etienne; T. Baghdasaryan, T. Geernaert, H. Thienpont, F. Berghmans, Vrije Universiteit Brussels
We show that fiber Bragg gratings inside photonic crystal fibers are good pressure and transverse strain sensors, for structural health monitoring of civil structures, as well as for operation in harsh environments, as nuclear industry.
B-5 12:00 PM
Total Ionizing Dose Effects in 70 GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform P. S. Goley, G. N. Tzintzarov, S. Zeinolabedinzadeh, A. Ildefonso, J. D. Cressler, Georgia Institute of Technology; R. Jiang, E. X. Zhang, D. M. Fleetwood, Vanderbilt University; L. Zimmermann, Innovations for High Performance Microelectronics
Silicon waveguide coupled PIN germanium photodiodes from an integrated photonics platform were exposed to ionizing radiation from a 10keV X-ray source. There was no significant degradation observed in device performance up to 5Mrad(SiO2).
The Effect of 1-10 MeV Neutrons on the JESD89 Test Standard H. Quinn, A. Watkins, LANL; L. Dominik, Honeywell
The JESD89A test standard defines how terrestrial neutron testing is conducted. We present information on whether the minimum energy for neutron-induced single-event effects should be lowered from 10 MeV to 1 MeV.
C-2 2:15 PM
Directional Dependence of Co-60 Irradiation on the Total Dose Response of Flash Memories M. J. Gadlage, D. I. Bruce, J. D. Ingalls, D. P. Bossev, M. J. Kay, NSWC CRANE
A strong dependence on the direction of Co-60 irradiation is observed in the total dose induced data corruption of an assortment of flash memories. Hardness assurance implications of this dose enhancement effect are discussed.
C-3 2:30 PM
Process Variation Aware Analysis of SRAM SEU Cross-Sections Using Data Retention Voltage D. Kobayashi, K. Hirose, ISAS/JAXA and University of Tokyo; N. Hayashi, University of Tokyo; Y. Kakehashi, O. Kawasaki, JAXA; T. Makino, T. Ohshima, QST; D. Matsuura, Y. Mori, M. Kusano, T. Narita, S. Ishii, K. Masukawa, MHI Ltd.
Parts assurance has to deal with large chip-to-chip and cell-to-cell parameter variations. Proposed is a method of analyzing radiation test results for the purpose. It requires no additional specially designed circuit.
C-4 2:45 PM
Total Dose Testing Methodology for Bipolar Circuits Operating in the Jovian Radiation Environment P. C. Adell, S. M. McClure, B. G. Rax, D. O. Thorbourn, A. Kenna, L. Z. Scheick, JPL
A total-dose testing methodology for qualifying bipolar circuits for the Europa Mission is presented. The method leverages from the mission dose-rate profile to bound device performances and reduces qualification test-time.
3:00 PM - 3:25 PM Kohala Ballroom
SESSION D 3:25 PM Monarchy Ballroom
RADIATION HARDENING BY DESIGN SESSION INTRODUCTION Chair: Lloyd Massengill, Vanderbilt University
D-1 3:30 PM
SEE Evaluation on ARM M0 Cores Implemented with ST’s 28nm FDSOI Technology S. Shi, University of Saskatchewan and China Institute of Atomic Energy; X. Li, Y. Li, R. Liu, L. Chen, University of Saskatchewan; A. Evan, MINATEC, CEA-LETI DACLE; J. Cunha, L. Summerer, V. Ferlet-Cavrois, ESA; M. Glorieux, IROC Technologies; R. Wong, S.-J. Wen, Cisco Inc.; G. Guo, China Institute of Atomic Energy
Two AMR cores were implemented on the same die with 28 nm FDSOI technology. Heavy-ion experiments showed the cross-section of the core with DICE FFs was about 2 times smaller than with regular FFs.
D-2 3:45 PM
Increasing the Effectiveness of TMR by Manipulating the Placement and Routing for Designs Deployed on SRAM FPGAs M. Cannon, A. Keller, H. Rowberry, M. Wirthlin, Brigham Young University
The effectiveness of single device TMR is improved to 368x from 76x in neutron irradiation over an unmitigated design through low-level placement and routing manipulations which address single bits that cause multiple domain failure.
D-3 4:00 PM
Design and Test of a RHBD CMOS-Only Voltage Reference J. Jiang, W. Shu, Y. Qu, K. S. Chong, J. S. Chang, Nanyang Technological University
We report a RHBD CMOS-only reference by a Zero-Temperature-Coefficient technique wherein MOSFETs are biased at strong inversion. 1.5% variation is achieved over 1000 krad TID, and can be improved by technology scaling.
D-4 4:15 PM
Selective Hardening for Neural Networks in FPGAs F. Libano, P. Rech, Universidade Federal do Rio Grande do Sul; B. Wilson, M. Wirthlin, Brigham Young University
Through fault-injection we identify the most vulnerable portions of neural networks on FPGAs. Using beam experiments, we propose and validate a selective hardening strategy, reducing by 65% the error-rate with a 45% overhead.