7:30 AM Mardi Gras & Bissonet/Carondelet Ballrooms
8:30 AM Acadia Ballroom
Opening Remarks Véronique Ferlet-Cavrois, European Space Agency, General Chairwoman
Awards Presentation Allan Johnston, Radiation Effects Steering Group Executive Chair
Technical Session Opening Remarks Heather Quinn, Los Alamos National Laboratory, Technical Program Chair
SESSION A 9:10 AM
RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Timothy R. Oldham, Ball Aerospace
A-1 9:15 AM
Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory D. Chen, R. Ladbury, K. LaBel, NASA GSFC; E. Wilcox, C. Seidleck, H. Kim, A. Phan, AS&D, Inc.
We evaluate the Hynix 3D NAND, a first NAND flash architecture with SLC and MLC modes. We observed reduced MBU susceptibility relative to a planar NAND. Furthermore, the SEU cross section varied inversely with fluence.
High Energy Electron Irradiation of Samsung 8Gb NAND Flash Memory F. Irom, G. R. Allen, L. D. Edmonds, Jet Propulsion Laboratory
This paper reports the results of 60 MeV electron irradiation of Samsung 8Gb single-level cell NAND flash memory. The electron percentage bit errors are compared to results from 60Co total ionizing dose measurements.
Radiation Tolerant Digital Multiphase Current-Mode Hysteretic Point-of-Load Regulator P. C. Adell, G. Allen, JPL; M. Sung, B. Bakkaloglu, Z. Yang, K. Joshi, Arizona State University
A radiation-tolerant digital point-of-load regulator fabricated on a commercial process is presented. Experiments and simulations are used to demonstrate its single-event-immunity and its total-dose tolerance over 100 krad(Si).
Proton-Induced Total-Ionizing-Dose and Displacement-Damage Effects on Silicon Based MEMS Resonators H. Gong, W. Liao, E. X. Zhang, A. L. Sternberg, M. W. McCurdy, J. L. Davidson, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University; P. D. Shuvra, J.-T. Lin, S. McNamara, B. W. Alphenaar, K. M. Walsh, University of Louisville
The competing effects between total ionizing dose and nonionizing energy loss are investigated by irradiating silicon based MEMS resonators with protons. TID dominates for higher energy protons, while NIEL dominates for lower energy protons.
10:15 AM - 11:00 AM Mardi Gras & Bissonet/Carondelet Ballrooms
A-5 11:00 AM Acadia Ballroom
Total-Ionization-Dose Effects on Microscanners with Al/SiO2 Electrothermal Bimorph Actuators W. Liao, E. X. Zhang, M. L. Alles, A. L. Sternberg, C. N. Arutt, S. Zhao, P. Wang, M. W. McCurdy, D. M. Fleetwood, R. A. Reed, R. D. Schrimpf, Vanderbilt University; D. Wang, H. Xie, Unviersity of Florida
Total-ionizing-dose effects on electrothermal microscanners are investigated with 10-keV X-rays. The mechanical displacement changes with dose and does not recover during post-irradiation annealing.
Investigations on the Bias Configuration and Geometry Effects on the TID Response of SOI Tri-Gate Nanowire Field Effect Transistors J. Riffaud, M. Gaillardin, C. Marcandella, M. Martinez, P. Paillet, O. Duhamel, T. Lagutere, M. Raine, N. Richard, CEA, DAM, DIF; F. Andrieu, S. Barraud, M. Vinet, O. Faynot, CEA, LETI-Minatec
The effect of the bias configuration during irradiation is investigated in tri-gate nanowire FETs using x-ray irradiation experiments. Implications for hardening by design are discussed.
Total Ionizing Dose Effects on GaN Based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric M. A. Bhuiyan, T.-P. Ma, Yale University; H. Zhou, P. Ye, Purdue University; X. Lou, X. Gong, R. G. Gordon, Harvard University; R. Jiang, H. Gong, E. X. Zhang, R. A. Reed, D. M. Fleetwood, Vanderbilt University
Radiation hardness of AlGaN/GaN HEMTs improves with increasing GaN channel thickness. Epitaxial MgCaO shows its promise as a radiation-tolerant gate dielectric. The ACGM method is used to help understand radiation-induced charge trapping.
TID Effects in Reconfigurable MOSFETs Using Two-Dimensional Semiconductor WSe2 J. U. Lee, P. Dhakras, P. Agnihotri, H. Bakhru, SUNY Poly; H. Hughes, U.S. Naval Research Laboratory
We examine TID effects in devices that can reconfigure into both n- and p-channel MOSFETs. The devices are fabricated using 2D TMD semiconductor WSe2 and allow better insight into radiation effects than unipolar devices.
PHOTONIC DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Joseph R. Srour, The Aerospace Corporation
B-1 1:30 PM
Total Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors S. Rizzolo, V. Goiffon, M. Estribeau, C. Durnez, P. Magnan, ISAE-SUPAERO; P. Paillet, C. Marcandella, CEA, DAM, DIF
Various PPD-CIS designs are investigated with the aim to clarify the TID induced degradation on charge transfer performance up to 1 Mrad. The results suggest RHBD solutions for their employment in future space missions.
Total Ionizing Dose Radiation Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors C. Durnez, ISAE-SUPAERO, CNES, and Sofradir; V. Goiffon, S. Rizzolo, P. Magnan, ISAESUPAERO; C. Virmontois, CNES; P. Paillet, C. Marcandella, CEA, DAM, DIF; L. Rubaldo, Sofradir
Random Telegraph Signals (RTS) due to total ionizing dose are studied in CMOS image sensors with several design variations. The localization and some properties of such RTS centers are reported.
Total Ionizing Dose Effects on a Radiation Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling V. Goiffon, S. Rizzolo, F. Corbiere, S. Rolando, A. Chabane, M. Sergent, M. Estribeau, P. Magnan, ISAE-SUPAERO; P. Paillet, M. Gaillardin, CEA, DAM, DIF; S. Girard, Université de Saint Etienne; M. Van Uffelen, L. Mont Casellas, Fusion for Energy; R. Scott, Oxford Technologies Ltd.; W. De Cock, SCK-CEN
TID effects are studied up to 10 MGy (1 Grad) on a RHBD 256x256 pixel CMOS Image Sensor Demonstrator for ITER. This work clarifies the influence of several design parameters on the CIS radiation hardness.
Steady-State Gamma-Ray Induced Effects on Brillouin Scattering Based Optical Fiber Sensors A. Morana, S. Girard, C. Cangialosi, E. Marin, A. Boukenter, Y. Ouerdane, Universite de Saint-Etienne; I. Planes, Universite de Saint-Etienne and National Radioactive Waste Management Agency (Andra); S. Delepine-Lesoille, National Radioactive Waste Management Agency (Andra)
The effects induced by gamma-rays on Brillouin based optical fiber sensors have been studied during irradiation at high doses, up to 10 MGy. Only small errors on temperature measurements have been observed.
BASIC MECHANISMS OF RADIATION EFFECTS SESSION INTRODUCTION Chair: Elizabeth C. Auden, Sandia National Laboratories
C-1 3:15 PM
Coverglass Radiation-Induced Multijunction Solar Cell Current-Limiting Effects S. R. Messenger, M. A. Kruer, Northrop Grumman Corporation
The implications of ionizing radiation-induced coverglass darkening on the current-limiting characteristics of currently-flown multijunction solar cells are discussed. An interesting relationship between displacement damage and ionizing radiation exists.
Simulation of Single Particle Displacement Damage in Silicon – Part III: First Principles Characterization of Defect Properties A. Jay, A. Le Roch, V. Goiffon, P. Magnan, ISAE; N. Richard, M. Raine, P. Paillet, CEA; L. Martin-Samos, University of Nova Gorica; N. Mousseau, Université de Montréal; A. Hémeryck, LAAS/CNRS
First principles characterizations of defects coming from one second simulations are performed to get a better understanding of Dark-Current and Dark-Current Random Telegraph Signal phenomena.
Effects of Bias on the Total-Ionizing Dose Response of Graphene Transistors with Al2O3 and h-BN Over-Layers P. Wang, A. O. Hara, E. X. Zhang, H. Gong, C. Liang, R. Jiang, W. Liao, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, Vanderbilt University; C. Perini, E. M. Vogel, Georgia Institute of Technology; B. R. Tuttle, Vanderbilt University and Penn State Behrend
Over-layer material type and thickness and applied bias during irradiation strongly affect the radiation response of graphene transistors. Low-frequency noise measurements and density functional calculations provide insight into defect microstructure and energy distributions.
Radiation-Induced Charge Trapping in Black Phosphorus MOSFETs with HfO2 Gate Dielectrics C. Liang, P. Wang, S. Zhao, E. X. Zhang, M. L. Alles, D. M. Fleetwood, and R. D. Schrimpf, Vanderbilt University; R. Ma, Y. Su, S. Koester, University of Minnesota
Radiation-induced trapped charge in the HfO2 dielectric layers of black phosphorus MOSFETs is characterized via current-voltage and temperature-dependent low-frequency noise measurements. The defect-energy distribution decreases strongly with increasing temperature.
Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65 nm MOSFETs Irradiated to Ultra-High Doses F. Faccio, E. Lerario, S. Michelis, CERN; G. Borghello, CERN and Udine University; D. M. Fleetwood, R. D. Schrimpf, H. Gong, E. X. Zhang, P. Wang, Vanderbilt University; S. Gerardin, A. Paccagnella, S. Bonaldo, Padova University
Radiation-induced short-channel effects in 65 nm transistors are caused by ionization in LDD spacers and the consequent hydrogen transport. The resulting interface traps shift the threshold voltage and increase parasitic series resistance.