Technical Session Opening Remarks Simone Gerardin, University of Padova, Technical Program Chairman
SESSION A 8:55 AM
SINGLE EVENT EFFECTS: MECHANISMS AND MODELING SESSION INTRODUCTION Chair: Rubén Garcia Alia, CERN
A-1 9:05 AM
A Chip-level Single Event Latchup (SEL) Estimation Methodology A. Neale, N. Seifert Intel Corporation, USA
In this work we discuss an SEL assessment methodology that is truly chip-level. The model is calibrated leveraging SEL test structures that enable direct quantification of SEL rates as a function of layout design styles.
A-2 9:20 AM
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Diodes D. Ball1, K. Galloway1, R. Johnson1, M. Alles1, A. Sternberg1, B. Sierawski1, A. Witulski1, R. Reed1, R. Schrimpf1, J. Hutson2, J. Lauenstein3, A. Javanainen4 1. Vanderbilt University, USA 2. Lipscomb University, USA 3. NASA GSFC, USA 4. University of Jyväskylä, Finland
Heavy ion data suggest a common mechanism for SEB in SiC power MOSFETs and diodes. TCAD simulations show an ion-induced, highly-localized energy pulse is capable of causing SEB in both types of devices.
A-3 9:35 AM
Thermal Neutron and Fast Neutron-induced SEEs in Microcontrollers with Suspected 10B E. Auden1, H. Quinn1, S. Wender1, J. O’Donnell1, P. Lisowski1, J. George1 1. Los Alamos National Laboratory, USA
Soft error rates were measured in microcontrollers suspected to contain boron-10. A strong response to thermal neutrons was observed. Simulations indicate both products from 10B(n,α)7Li reactions can cause upsets at the 130-nm and 65-nm nodes.
A-4 9:50 AM
Polarization Dependence of Pulsed Laser Induced SEEs in a FinFET Structure L. Ryder1, K. Ryder1, A. Sternberg1, J. Kozub1, H. Gong1, E. Zhang1, D. Linten2, J. Mitard2, R. Weller1, R. Schrimpf1, S. Weiss1, R. Reed1 1. Vanderbilt University, USA 2. IMEC, Belgium
Pulsed laser induced single event current measurements on FinFETs experimentally show dependence on the polarization of the laser light. This dependence may affect the reproducibility of laser-based measurements
Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI A. Ildefonso1, G. Tzintzarov1, A. Omprakash1, D. Nergui1, P. Goley1, J. Hales2, A. Khachatrian2, S. Buchner2, D. McMorrow2, J. Warner2, J. Cressler1 1. Georgia Institute of Technology, USA 2. U.S. Naval Research Laboratory, USA
A comparison of heavy-ion-induced single-event transients in SiGe HBTs on bulk and SOI is presented. Laser data and TCAD simulations are used to explain some unexpected results. The implications on ion/laser correlation are discussed.
B-2 10:25 AM
New Approach for Pulsed-Laser Single-Event Effects Testing that Mimics Heavy-Ion Charge Deposition Profiles J. Hales1, A. Khachatrian1, J. Warner1, S. Buchner1, A. Ildefonso2, T. George2, D. Nergui2, J. Cressler2, D. McMorrow1 1. U.S. Naval Research Laboratory, USA 2. Georgia Institute of Technology, USA
A new optical approach for pulsed-laser testing using two-photon absorption produces dosimetry similar to a heavy ion. This approach removes a known impediment to correlating single-event effects produced by laser and heavy-ion irradiation.
B-3 10:40 AM
Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam D. Nergui1, A. Ildefonso1, G. Tzintzarov1, A. Omprakash1, Z. Fleetwood2, S. Lalumondiere3, D. Monahan3, J. Bonsall3, H. Kettering3, J. Cressler1 1. Georgia Institute of Technology, USA 2. SpaceX, USA 3. Aerospace Corporation, USA
The first experimental study of pulsed X-ray induced single-event transients in SiGe HBTs is presented. Charge collection data from pulsed X-rays are analyzed and compared with those of heavy ions.
10:55 AM - 11:25 AM Salons G-M
SESSION C 11:25 AM
Session C: SINGLE EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Balaji Narasimham (Broadcom)
C-1 11:30 AM
The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Architecture R. Brewer1, S. Moran2, J. Cox2, B. Sierawski1, M. McCurdy1, S. Iyer2, M. Alles1, R. Reed1 1. Vanderbilt University, USA 2. University of California Los Angeles, USA
Single event upsets are found to change the relative occurrence of false positives/negatives in a neuromorphic architecture engaged in image recognition even when the overall classification accuracy is unaffected.
C-2 11:45 AM
Investigation of Buried-Well Potential Perturbation Effects on SEU in SOI DICE-based Flip-Flop Under Proton Irradiation K. Sakamoto1, S. Baba1, S. Okamoto1, H. Shindou1, O. Kawasaki1, D. Kobayashi2, K. Hirose2, T. Makino3, Y. Mori4, D. Matsuura4, M. Kusano4, T. Narita4, S. Ishii4 1. Japan Aerospace Exploration Agency, Japan 2. ISAS/JAXA, Japan 3. QST, Japan 4. MHI, Japan
The effects of potential perturbation under the BOX layer are studied in a high-energy proton-SEU test of an SOI DICE-based flip-flop. Their dependence on incident-angle and back-bias is discussed in comparison with non-DICE structure responses.
C-3 12:00 PM
Comparison of the Impact of Thermal and High Energy Neutrons in COTS Devices D. Oliveira1, F. Santos1, G. Piscoya1, C. Cazzaniga2, C. Frost2, R. Baumann3, P. Rech1 1. UFRGS, Brazil 2. STFC, United Kingdom 3. Radiosity Solutions, USA
We compare the impact of high-energy and thermal neutrons on COTS memories and processing devices. Thermal neutrons still pose a risk for COTS reliability and their failure signature is unique from failures caused by high-energy neutrons.
C-4 12:15 PM
Understanding the Key Parameter Dependencies Influencing the Soft-Error Susceptibility of Standard Combinational Logic N. Pande, S. Kumar, L. Everson, C. Kim University of Minnesota, USA
This work presents statistical results and detailed analysis on the multitude of design choices affecting soft-error susceptibility of standard combinational logic in advanced CMOS nodes
12:30 PM - 1:55 PM
SESSION D 2:20 PM
DOSIMETRY SESSION INTRODUCTION Chair: Anatoly Rosenfeld (University of Wollongong)
D-1 2:25 PM
SOI Thin Microdosimeters for High LET Single Event Upset Studies in Fe, O, Xe and Cocktail Ion Beam Fields B. James1, L. Tran1, D. Bolst1, S. Peracchi1, J. Davis1, D. Prokopovich2, S. Guatelli1, M. Povoli3, A. Kok3, N. Mastufuji4, M. Van Goethem5, M. Nancarrow6, A. Rosenfeld1 1. University of Wollongong, Australia 2. Australia’s Nuclear Science and Technology Organisation (ANSTO), Australia 3. SINTEF, Norway 4. National Institute of Radiological Sciences (NIRS), Japan 5. University of Groningen / KVI-CART, Netherlands Antilles 6. Australian Institute of Innovative Materials, Australia
Response of silicon-on-insulator microdosimeters was investigated with Fe, O, Xe and cocktail ion beam fields. 5 µm microdosimeters are applicable for single event upset prediction in mixed ion fields with LET up to 8 MeV/µm
D-2 2:40 PM
A Heavy Ion Detector Based on 3D-NAND Flash Memories M. Bagatin1, S. Gerardin1, A. Paccagnella1, S. Beltrami2, A. Costantino3, C. Poivey3, G. Santin3, V. Ferlet-Cavrois3, C. Cazzaniga4, C. Frost4 1. University of Padova, Italy 2. Micron Technology, Italy 3. ESA, Netherlands 4. STFC, United Kingdom
The feasibility of a 3D NAND Flash based heavy-ion detector is explored. The possibility of measuring the angle of incidence and the LET of impinging particles through the pattern of threshold voltage shifts is discussed.
D-3 2:55 PM
Simulation and Measurements of Collimator Effects in Proton and Neutron Radiation Testing for Single Event Effects C. Bélanger-Champagne, E. Blackmore, C. Lindsay, C. Hoehr, M. Trinczek TRIUMF, Canada
Proton beam profile data from a SRAM-based dosimeter is compared to FLUKA simulations to understand the contributions of secondary neutrons and slit-scattered protons to the flux outside of the nominal irradiation area for SEE testing.
3:10 PM - 3:40 PM Salon G-M
SESSION E 3:40 PM
SPACE AND TERRESTRIAL ENVIRONMENTS SESSION INTRODUCTION Chair: Giovanni Santin (ESA)
E-1 3:45 PM
An Update to MOBE-DIC Using Current Monitor Measurements from Galileo A. Hands1, K. Ryden1, I. Sandberg2, D. Heynderickx3, G. Provatas2, S. Giamini2, A. Tsigkanos2, C. Papadimitriou2, D. Rodgers4, H. Evans4 1. University of Surrey, United Kingdom 2. Space Applications and Research Consultancy (SPARC), Greece 3. DH Consultancy, Belgium 4. ESA, Netherlands
We use electron flux derived from the “EMU-SURF” current monitor on board a Galileo GNSS constellation satellite to modify and update the Model of Outer Belt Electrons for Dielectric Internal Charging (MOBE-DIC).
E-2 4:00 PM
Single Event Effects in Ground Level Infrastructure during Extreme Ground Level Enhancements A. Dyer, A. Hands, K. Ryden, C. Dyer University of Surrey, United Kingdom
Historical extreme space weather event data has been used to derive representative ground level neutron fluxes which have been applied to microelectronic device hard single event effect cross-sections to determine their predicted risk of failure.