7:30 AM Mardi Gras & Bissonet/Carondelet Ballrooms
SESSION D 8:25 AM Acadia Ballroom
SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Paolo Rech, Federal University of Rio Grande do Sul
D-1 8:30 AM
Multiple-Cell Upsets Induced by Single High-Energy Electrons M. J. Gadlage, A. H. Roach, A. R. Duncan, A. M. Williams, D. P. Bossev, M. J. Kay, NSWC CRANE
Multiple-cell upsets in SRAM-based FPGAs are recorded from single particle interactions with high-energy electrons. Indirect ionization events are shown to be the cause of the MCUs and trends with scaling are discussed.
D-2 8:45 AM
Single Event Latch-Up: Increased Sensitivity from Planar to FinFET J. Karp, M. J. Hart, P. Maillard, Xilinx, Inc.; G. Hellings, D. Linten, IMEC
Increased sensitivity of FinFET technology to SEL found with proton/neutron testing. TCAD simulations demonstrated that 3X shallower trench isolation of FinFET significantly increases both ßnpnßpnp-gain of parasitic CMOS SCR and SEL sensitivity.
D-3 9:00 AM
From MOSFETs to FinFETs - the Soft Error Trends I. Chatterjee, Airbus; N. N. Mahatme, NXP Semiconductors; B. Narasimham, Broadcom Corporation; B. L. Bhuva, Vanderbilt University; S.-J. Wen, R. Wong, Cisco Systems
As technology scaled from planar transistors to FinFETs, concerns about soft errors became paramount. This work paints a comprehensive picture of the soft error scaling trends for memories, sequential and combinational circuit elements across technologies.
D-4 9:15 AM
Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies P. Nsengiyumva, L. W. Massengill, J. S. Kauppila, J. A. Maharrey, R. C. Quinn, T. D. Haffner, D. R. Ball, M. L. Alles, B. L. Bhuva, E. X. Zhang, J. D. Rowe, A. L. Sternberg, Vanderbilt University
Experimental heavy-ion angular data and single-event mechanisms in bulk FinFET circuits are presented. Results show that upset characteristics can be attributed to separate charge collection mechanisms in the fin and sub-fin substrate.
D-5 9:30 AM
Single-Event Upset Mitigation in a Complementary SiGe HBT BiCMOS Technology N. E. Lourenco, Georgia Tech Research Institute; A. Ildefonso, G. N. Tzintzarov, Z. E. Fleetwood, J. D. Cressler, Georgia Institute of Technology; K. Motoki, Japan Aerospace Exploration Agency; P. Paki, Defense Threat Reduction Agency; M. Kaynak, Innovation for High Performance Microelectronics
C-SiGe BiCMOS is investigated as a potential SEE mitigation strategy via broad-beam testing of npn and pnp high-speed digital test structures. TCAD simulations are utilized to ascertain the underlying transient mechanisms.
D-6 9:45 AM
Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits A. Ildefonso, C. T. Coen, Z. E. Fleetwood, G. N. Tzintzarov, M. T. Wachter, Georgia Institute of Technology; A. Khachatrian, Naval Research Laboratory and Sotera Defense; D. McMorrow, J. H. Warner, Naval Research Laboratory; P. Paki, Defense Threat Reduction Agency
The use of RF power detectors for sensing single-event transients in RF circuits is studied by using two-photon absorption carrier injection and mixed-mode TCAD simulations.
10:00 - 10:40 AM Mardi Gras & Bissonet/Carondelet Ballrooms
D-7 10:40 AM
Transmission Line Pulse Test Method for Estimating SEB Performance of N-Channel Lateral DMOS Power Transistors P. L. Hower, M. Hamlyn, R. Bauman, Texas Instruments; K. Warren, Vanderbilt University
A method of waferlevel SEB characterization is described. The method uses scribeline LDMOS transistors and a TLP tester. The mechanism of SEB is explored using TCAD simulation. Experimental heavy ion data are compared to TLP results.
D-8 10:55 AM
Single Event Burnout of High-Voltage SiC Junction Barrier Schottky Diodes A. F. Witulski, R. D. Schrimpf, A. L. Sternberg, K. F. Galloway, Vanderbilt University; A. Raman, R. Arslanbekov, CFD Research Corporation; A. Javanainen, University of Jyvaskyla; D. Grider, D. Lictenwalner, B. Hull, Wolfspeed
Ion-induced catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are examined. Experimental data and TCAD simulations suggest that localized heating is responsible for the failures.
Effects of Heavy-Ion Irradiation in Vertical 3D NAND Flash Memories M. Bagatin, S. Gerardin, A. Paccagnella, University of Padova; S. Beltrami, E. Camerlenghi, M. Bertuccio, Micron Technology; A. Costantino, A. Zadeh, V. Ferlet-Cavrois, G. Santin, E. Daly, ESA - ESTEC
The effects of heavy-ion irradiation on 3D NAND Flash memories are experimentally studied. Threshold voltage shifts are analyzed versus ion LET, the mechanisms are discussed, and the results are compared with planar Flash technologies.
E-2 11:30 AM
The Impact of Collection Volume and Parasitic Capacitance on SEUs in SOI vs. Bulk FinFET D Flip-Flops D. R. Ball, M. L. Alles, J. S. Kauppila, R. C. Quinn, J. A. Maharrey, P. Nsengiyumva, T. D. Haeffner, J. D. Rowe, A. L. Sternberg, E. X. Zhang, B. L. Bhuva, L. W. Massengill, Vanderbilt University
Dramatic differences between SOI and bulk FinFET SEU thresholds and saturated cross sections in D flip-flops are attributed to SET pulse widths influenced by finite volumes and modulated by parasitic capacitance values.
E-3 11:45 AM
Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1D Case Applied to 28 nm FD-SOI Devices V. Malherbe, G. Gasiot, T. Thery, STMicroelectronics; J.-L. Autran, IM2NP
We present a 1D solver for single-event simulation. Owing to its computational speed and circuit-coupling ability, the module is embedded in our SER simulation platform, enabling projections on logic cells in 28nm FDSOI.
New Orleans and the Early Days of Jazz Richard Scott
Jazz music is America’s art form, and for decades, the story of Jazz was the story of America. The music was the soundtrack for the enthusiasm of the twenties and was the voice of those who struggled through the Great Depression. The music was for dancing and musicians reached legendary status. Jazz was the voice of a social revolution, and is still a frontier of exploration for those who seek it.
The story of Jazz begins in New Orleans, where many different cultures and musical styles came together. Richard Scott is experienced in these musical styles, and is very adept at explaining the elements that came together to ignite the spark of jazz. His piano playing is able to transport the listener back in time, demonstrates the musical points he discusses, and is always entertaining. He is also a wonderful vocalist, able to conjure up the sounds of the earliest pioneers of jazz. He believes that this music was always created to be fun, and his love for the art is heard in every note he plays.
Piano sensation Richard Scott started playing piano at age four and as a teenager fell in love with Ragtime and New Orleans Jazz. He moved to New Orleans in 2000 and started playing with jazz bands on Bourbon Street. He performed aboard the Steamboat Natchez for nightly dinner cruises for the next thirteen years and toured the world with the famous Dukes of Dixieland. Now you can catch him playing piano most nights at Fritzel’s Jazz Pub with some of the greatest musicians in New Orleans. He works also for the New Orleans Jazz National Historic Park, giving weekly programs on New Orleans Jazz History. He has albums of classic New Orleans songs as well as his own original compositions. You can catch him anywhere playing brunches on banjo, playing French musettes on his accordion, or leading a second line parade wearing a sousaphone. He is very passionate about the music, plays different styles with accuracy, has a vast repertoire, and brings to the stage a love and enthusiasm for the music. Learn more at www.richardpianoscott.com
DAMSEL - Dynamic and Applicative Measurement of Single Events in Logic M. Glorieux, A. Evans, D. Alexandrescu, IROC Technologies; C. Boatella Polo, V. Ferlet-Cavrois, ESA
This paper describes a circuit for individually measuring both the impact of SEUs and SETs in realistic, synchronous digital circuits. Heavy-ion, pulsed laser and simulation results are presented.
F-2 3:00 PM
Analysis of Single Event Transient Duration and Electrical Delay with Implications for Near-Threshold Mitigation Techniques J. A. Maharrey, J. S. Kauppila, R. C. Quinn, P. Nsengiyumva, D. R. Ball, T. D. Haeffner, E. X. Zhang, B. L. Bhuva, W. T. Holman, L. W. Massengill, Vanderbilt University
SETs in 14nm bulk FinFET logic chains have been experimentally measured across bias. The efficacy of filter-based mitigation is assessed by analyzing the voltage dependency of SET duration against the characteristic electrical inverter delay.
F-3 3:15 PM
Correlation of the Spatial Variation of Single-Event Sensivity with Thermo-Reflectance Thermography in AlxGa1-xN/GaN HEMTs A. Khachatrian, Sotera Defense Solutions; N. J.-H. Roche, Montpellier University; L. B. Ruppalt, J. G. Champlain, A. D. Koehler, S. P. Buchner, T. J. Anderson, K. D. Hobart, J. H. Warner, D. P. McMorrow, NRL; V. Ferlet-Cavrois, M. Muschitiello, European Space Agency; K.-O. Voss, Gesselschaft fuer Schwerionenforschung
Spatial variation of Single Event Transients generated in AlxGa1-xN/GaN HEMTs are studied using focused ion beams and laser light. Regions of enhanced SET sensitivity overlap those with large temperature changes observed using thermo-reflectance.
3:30 - 3:55 PM Foyer
SESSION G 3:55 PM Acadia Ballroom
HARDENING BY DESIGN SESSION INTRODUCTION Chair: Michael Wirthlin, Brigham Young University
G-1 4:00 PM
Heavy Ion SEE Response of Multiple Flip-Flop Topologies in a 14nm Bulk FinFET Technology for Near Threshold Computing M. Cabanas-Holmen, M. Yao, J. Ballast, E. Cannon, J. Tostenrude, T. Amort, The Boeing Company; S. Rabaa, Matrix Visions LLC; K. Lilja, M. Bounasser, Robust Chip Inc.; D. Blaauw, Y. Kim, University of Michigan
We present SEE experimental data for various flip-flops fabricated in a 14nm bulk FinFET CMOS technology. The flip-flops were tested under nominal and near threshold bias conditions at multiple tilt and rotation angles.
G-2 4:15 PM
SET-Mitigated PNP-Based RF Switches in a Complementary SiGe BiCMOS Platform I. Song, Z. E. Fleetwood, M.-K. Cho, S. Pavlidis, J. D. Cressler, Georgia Institute of Technology; S. P. Buchner, D. McMorrow, US Naval Research Laboratory; P. Paki, Defense Threat Reduction Agency; M. Kaynak, IHP Microelectronics
A PNP SiGe HBT RF switch is proposed for SET mitigation. A through-wafer two-photon absorption pulsed-laser experiment was conducted. The proposed RF switch exhibited 55% reduction in transient peaks.
G-3 4:30 PM
SiGe HBT Profiles with Enhanced Inverse-Mode Operation to Mitigate Single-Event Transients Z. E. Fleetwood, A. Ildefonso, G. N. Tzintzarov, B. Wier, U. Raghunathan, M.-K. Cho, I. Song, M. T. Wachter, J. D. Cressler, Georgia Institute of Technology; A. Khachatrian, Naval Research Laboratory and Sotera Defense; J. Warner, P. McMarr, H. Hughes, D. McMorrow, Naval Research Laboratory; P. Paki, Defense Threat Reduction Agency; A. Joseph, V. Jain, GlobalFoundries
The radiation response of inverse mode profile optimization techniques is investigated in fabricated Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs).
G-4 4:45 PM
A 2.56 GHz SEU Radiation Hard LC-Tank VCO for High-Speed Communication Links in 65 Nm CMOS Technology J. Prinzie, M. Steyaert, P. Leroux, ESAT-ADVISE; P. Moreira, J. Christiansen, CERN
This paper presents a radiation tolerant Phase-Locked Loop CMOS ASIC with an optimized Voltage Controlled Oscillator for Single-Event Upsets. The circuit has been experimentally verified with heavy ions and two-photon laser tests.