Automated Vehicles and the Road Ahead Chris Mentzer, Assistant Director – R&D, Southwest Research Institute
The subject of automated driving has received international attention over the past several years as a new paradigm in transportation that may change how we live our lives. Companies ranging from existing automotive anufacturers to major technology companies to a variety of startups are all investing heavily into making automated vehicles a reality. Chris Mentzer will review a brief history of automated vehicle development and some of the terminology used in this space. He will also discuss the hardware and techniques currently involved in automated vehicle operation Ultimately the talk will focus on current challenges in this domain and hurdles the industry has yet to overcome for future adoption.
Chris Mentzer was extensively involved in SwRI’s Mobile Autonomous Robotics Technology Initiative (MARTI) program. This program created an autonomous vehicle out of a 2006 Ford Explorer with which SwRI was able to demonstrate key technologies improving upon the state-of-the-art in-ground vehicle autonomy. This system has been demonstrated alongside other industry leaders in the field at the Intelligent Transportation Systems (ITS) World Congress in 2008 and the Army’s Robotics Rodeo in 2009, 2010, and 2012. Chris performed system integration for the Small Unit Mobility Enhancement Technologies (SUMET) program for ONR and is currently the project manager for the Dismounted Soldier Autonomy Tools (DSAT), and follow-on Robotic Technology Kernel (RTK) programs for the US Army TARDEC. Chris is currently responsible for overseeing the unmanned ground vehicle programs at SwRI, including work in the commercial on-road, off-road and agricultural domains.
Microdose Reliability T. Oldham, C. Whitney, C. Arutt Ball Aerospace, USA
This paper analyzes underlying mechanisms for certain reliability failures in memories exposed to heavy ion irradiation. Although the failures are well-known, they have not generally been recognized as a microdose effect.
F-2 9:55 AM
Ionizing Radiation Tolerance of Stacked Si3N4-SiO2 Gate Insulators for Power MOSFETs K. Muthuseenu, H. Barnaby, A. Patadia, K. Holbert, A. Privat Arizona State University, USA
Metal-nitride-oxide-semiconductor capacitors are shown to exhibit a high tolerance to irradiation. Electrical characterization and TCAD simulations are performed to characterize these effects. Thick oxide-nitride layer can be used as gate insulator in power MOSFETs.
F-3 10:10 AM
Total-Ionizing-Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics S. Bonaldo1, S. Zhao2, A. O’Hara2, M. Gorchichko2, E. Zhang2, S. Gerardin1, A. Paccagnella1, N. Waldron3, N. Collaert3, V. Putcha3, D. Linten3, S. Pantelides2, R. Reed2, R. Schrimpf2, D. Fleetwood2 1. DEI - University of Padova, Italy 2. Vanderbilt University, USA 3. IMEC, Belgium
Radiation-induced buildup of defects in HfO2 and Al2O3 dielectric layers of InGaAs FinFETs is evaluated under different bias conditions through DC static characterization, noise vs. temperature measurements, and density-functional theory calculations.
10:25 - 10:55 AM Salons G-M
SESSION G 10:55 AM
RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Indranil Chatterjee (AIRBUS)
G-1 11:00 AM
Radiation Induced Variable Retention Time in Dynamic Random Access Memories V. Goiffon1, T. Bilba1, T. Deladerriere1, G. Beaugendre1, A. Le Roch2, A. Dion1, C. Virmontois3, M. Gaillardin4, A. Jay1, P. Paillet4 1. ISAE-SUPAERO, France 2. ISAE-SUPAERO / CNES, France 3. CNES, France 4. CEA, France
The variable retention time (VRT) phenomenon is studied in DDR3 DRAMs exposed to 60Co and 22 MeV neutrons. This work demonstrates that both, displacement damage dose and TID lead to the creation of VRT cells.
G-2 11:15 AM
Word Line Dependent Bit Error in 3-D NAND Flash Under Ionizing Radiation P. Kumari1, F. Irom2, B. Ray1 1. University of Alabama in Huntsville, USA 2. Jet Propulsion Laboratory, USA
We find the bottom layers of 3-D NAND flash are more vulnerable to ionizing radiation compared to the top layer cells due to non-uniform cell sizes. The result can be utilized for energy-efficient data scrubbing.
G-3 11:30 AM
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs M. Gorchichko1, Y. Cao2, E. Zhang1, D. Yan3, H. Gong1, S. Zhao1, P. Wang1, R. Jiang1, C. Liang1, D. Fleetwood1, R. Schrimpf1, R. Reed1, D. Linten4 1. Vanderbilt University, USA 2. Xidian University, China 3. Jiangnan University, China 4. IMEC, Belgium
Total-ionizing-dose effects and low-frequency noise are evaluated in 30-nm gate-length bulk and SOI FinFETs. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in noise are found.
G-4 11:45 AM
Total Ionizing Dose Effects on InGaAs FinFETs with Improved Gate Stack S. Zhao1, S. Bonaldo2, P. Wang1, E. Zhang1, N. Waldron3, N. Collaert3, D. Linten3, S. Gerardin4, A. Paccagnella2, R. Schrimpf1, R. Reed1, D. Fleetwood1 1. Vanderbilt University, USA 2. University of Padova, Italy 3. IMEC, Belgium 4. DEI - Padova University, Italy
Modifications of InGaAs nMOS FinFETs fabrication process show improved radiation response compared to first-generation development-stage devices. Changes to the gate stack, channel length dependence, and gate-bias dependence are discussed.
G-5 12:00 PM
Impact of Total Ionizing Dose on the Threshold Voltage of FOI FinFET with a Property of Tunable Interface Defects F. Zhang, B. Li, Q. Zhang, B. Li, L. Wang, Y. Huang, H. Yin, J. Luo, Z. Han, X. Liu 1. Chinese Academy of Sciences, China
TID effect of FOI FinFET is discussed. ALL-0 state is identified as the worst case up to 870 krad(SiO2). Radiation damage can be alleviated by tuning the quality and morphology of the fin bottom.
G-6 12:15 PM
TID-Induced Off-State Leakage Current in Radiation-Hardened SOI LDMOS S. Lei1, L. Wang2, X. Luo3, K. Zhao4, X. Zhou4, C. Sui2, Y. Li5, C. Liu6, T. Wang6, W. Cao2, Y. Zhao7, K. Galloway8 1. Harbin Institute of Technology, China 2. Beijing Microelectronics Technology Institute, China 3. University of Texas at Austin, USA 4. UESTC, China 5. Beijing University of Technology, China 6. HIT, China 7. HIT and BMTI, China 8. Vanderbilt University, USA
The off-state leakage current (IL) for SOI n-channel lateral power MOSFETs is examined after exposure to TID. Results show that the IL increases with accumulated dose. The mechanisms for IL are identified by TCAD simulation.
12:00 PM - 1:30 PM Salons G-M
Radiation Effects Data Workshop 2:00 - 4:45 PM Salons A, B, F
Chair: Kirby Kruckmeyer (Texas Instruments)
Guide to the 2018 IEEE Radiation Effects Data Workshop Record D. Hiemstra MDA, Canada
The 2018 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.
Total Dose Performance at High and Low Dose Rate of CMOS, BiCMOS, and Bipolar Low Dropout Voltage Regulators D. Hiemstra1, X. Li2, L. Chen2, V. Kirischian1 1. MDA, Canada 2. University of Saskatchewan, Canada
Results of Cobalt-60 irradiation of low dropout voltage regulators at high and low dose rates are presented. Performance in the space radiation environment is discussed.
Total Dose Homogeneity of Commercial-off-the-Shelf BiCMOS and Bipolar Voltage References at Low Dose Rate D. Hiemstra1, S. Shi2, Z. Li2, L. Chen2, V. Kirischian1 1. MDA, Canada 2. University of Saskatchewan, Canada
Total dose homogeneity of biCMOS and bipolar voltage references at low dose rate is presented. Radiation hardness assurance implications and performance in the space radiation environment are discussed.
0.040 rad(Si)/s Total Dose Testing of Renesas Parts Proposed for the Europa Clipper Mission N. Van Vonno, J. Gill, F. Ballou, L. Pearce, W. Newman Renesas Electronics America, USA
We report results of TID testing carried out by Renesas Electronics America and Jet Propulsion Laboratory for the Europa Clipper program. The program investigated the TID response of seven Intersil part types.
A Comparison of 0.040 rad(Si)/s and 0.010 rad(Si)/s Total Dose Results of Renesas Parts Proposed for the Europa Clipper mission N. Van Vonno, J. Gill, F. Ballou, L. Pearce, W. Newman Renesas Electronics America, USA
We compare results of TID testing at 0.010 and 0.040 rad(Si)/s carried out by Renesas and Jet Propulsion Laboratory for the Europa Clipper program. We investigated the TID response of seven Intersil part types.
Radiation Degradation of Temperature Dependences of Electrical Parameters of Bipolar Operational Amplifiers A. Bakerenkov, V. Pershenkov, V. Felitsyn, A. Rodin, V. Telets, V. Belyakov, A. Zhukov, N. Glukhov National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Russian Federation
Radiation-degradation temperature-dependence of electrical parameters of bipolar operational amplifiers was investigated. Results of the research can improve our understanding of physical and circuit radiation effects in bipolar operational amplifiers
Radiation Evaluation of the TPS7H2201-SP Load Switch J. Cruz-Colon, H. Torres, J. Valle, V. Narayanan Texas Instruments, USA
Single events effects characterization of the TPS7H2201-SP is discussed. Characterization shows the device is SEL/SEB/SEGR/SET and SEFI free up to LETeff = 75 MeVcm2/mg.
Radiation Effects Characterization of TI THS4541 Rail-to-Rail Output 850 MHz Fully Differential Amplifier V. Narayanan, R. Gooty, J. Cruz-Colon, Z. Kaye Texas Instruments Inc., USA
THS4541-SP is a rail to rail output 850 MHz fully differential amplifier being released for space applications. It passed total dose of 100 krad under both high and low dose rates and was latch-up immune up to 86 MeV-cm2/mg.
Radiation Evaluation of the ADS1278-SP Radiation Hardened 24-Bit 8-Ch Simultaneous-Sampling Delta-Sigma ADC R. Gooty Texas Instruments Inc., USA
Single event effects characterization results for ADS1278-SP 24-Bit 8-Ch simultaneous-sampling delta-sigma ADC is summarized, showing SEL free up to LETeff = 69.96 MeV-cm2/mg.
Single-Event Effects Testing for the ADC12DJ3200QML-SP 12-bit, Dual 3.2-GSPS or Single 6.4-GSPS, RF-Sampling, JESD204B, Analog-to-Digital Converter K. Lewis1, R. Taft2, A. Bodem2, T. Hoehn2, P. Schmitz2, V. Nair2, F. Savic2, M. Childs1, P. Kramer1, J. Sandner1, M. Guibord1 1. Texas Instruments, USA 2. Texas Instruments, Germany
The effects of heavy-ion irradiation on the single-event effect performance of the ADC12DJ3200QML-SP and its JESD204B serialized interface were characterized. The results demonstrate latch-up immunity up to LETeff = 120MeV-cm2/mg at TJ=125°C. Dynamic cross sections are presented.
Radiation Effects Characterization of Commercial Multi-Channel Digital to Analog Converters for Spaceflight Applications A. Daniel, G. Allen, S. Vartanian NASA - JPL, USA
This paper presents recent heavy ion single-event effects test results for commercial off the shelf multi-channel digital to analog converter devices. Data were taken in FY18 for device evaluation for use in a NASA space observatory mission.
Single Event Transient and Single Event Upset Characterization of a Cobham Designed 3.125 Gbps Crosspoint Switch M. Von Thun, J. Pfeil, T. Engelbart, A. Turnbull Cobham, USA
Single event transient and single event upset characterization data will be presented for the newly designed and fabricated Cobham radiation-hardened UT65CML8X8FD 3.125 Gbps Crosspoint Switch (XPS).
Characterization of the Effects of Proton-Induced Total Ionizing Dose and Displacement Damage on the UC1875 Controller S. Messenger, M. Mishler, J. Hack, P. Dudek Northrop Grumman Corporation, USA
This paper explores the combined effects of total ionizing dose and displacement damage caused by 250 MeV protons on the Texas Instruments UC1875 controller. Two fluences, 4e11 and 1e12 protons/cm2, were used.
Characterization of the Effects of 250 MeV Proton-Induced Total Ionizing Dose and Displacement Damage on the HCPL-625K Optocoupler S. Messenger, M. Mishler, J. Hack, P. Dudek Northrop Grumman Corporation, USA
This paper explores the combined effects of total ionizing dose and displacement damage caused by 250 MeV protons on the Broadcom HCPL-625K optocoupler. Proton fluences up to 4e12 were used.
TID and SEE Responses of Rad-Hard A/D Converter RHFAD128 G. Chaumont1, F. Malou2, A. Souflet1, C. Prugne1 1. STMicroelectronics, France 2. CNES, France
This paper reports on the different responses observed during heavy ion irradiation and total ionizing dose tests on a newly developed Rad-Hard, 8-Channel, 50 ksps to 1 Msps, 12-Bit A/D Converter, called RHFAD128.
Single Event Effects and Total Ionizing Dose Test Results for a Current Mode Controller Evaluated for Use in a Harsh Space Radiation Environment A. Bozovich, A. Barchowsky, G. Allen, S. Vartanian, D. Nguyen, S. Zajac, B. Kahn, E. Merida NASA JPL, USA
This paper investigates recent single event effects and total ionizing dose test results for the Analog Devices RH3845 synchronous buck controller. This device is evaluated for use in a harsh space radiation environment.
Heavy Ion Single Event Effects Results for PWM5032 Pulse Width Modulator Controller J. Likar1, S. Katz1, R. Sulyma2 1. JHU APL, USA 2. Cobham Advanced Electronic Systems, USAh
Heavy ion testing of the PWM5032 PWM Controller yielded resulted in no destructive failures; non-destructive events were observed and characterized.
Proton, Gamma and Neutron Irradiation of a 10 V Precision Voltage Reference R. Dungan, D. Lo, T. Tran, D. Murlin, D. Hamberg Northrop Grumman Aerospace Systems, USA
Electrical performance data were collected on a 10 V voltage reference from proton, γ-ray, and γ-ray + neutron irradiation. Comparisons are made between the results from the different irradiation methods, and proton-induced SET results are reported.
Single Event Dielectric Rupture Characterization of Microchip High Voltage Devices D. Truyen, S. Furic, E. Leduc Microchip, France
Experimental results on single-event hard errors (SEDR-SEGR) of high voltage MOS transistors and capacitors are presented. A pre- and post-irradiation characterization has been carried out, and safe operating areas have been established.
Glenair Optical 5 Gbps and 10 Gbps Transceiver Radiation Test Summary R. Logan1, E. Chua1, R. Wyss1, J. Schaefer2, M. Gruber2, I. Troxel2 1. Glenair, USA 2. Troxel Aerospace, USA
Radiation data for Glenair’s 050-301 5 Gbps and 050-346 quad-channel 10 Gbps optical transceivers are presented including SEL, heavy-ion and proton SEE, and TID data for the 5 Gbps; and SEL and heavy-ion SEE for the 10 Gbps devices.
Heavy Ion Single Event Latchup Measurements of a Focal Plane Imager at Room and Cryogenic Temperatures F. Irom, G. Allen, B. Hancock, G. Mariani NASA JPL, USA
Heavy ion-induced SEL is characterized in a CMOS focal plane array readout at room temperature and 225 K. The LET threshold at room temperature is between 22-24 MeV-cm2/mg. The part is SEL immune at 225 K.
Test Results of Proton Single-Event Effects Conducted by the Jet Propulsion Laboratory G. Allen, F. Irom, S. Vartanian NASA JPL, USA
This paper reports recent SEE results for a variety of microelectronics that include SRAM, FPGA, Flash memory and a linear regulator. The data was collected to evaluate these devices for possible use in NASA missions.
NASA Goddard Space Flight Center’s Compendium of Total Ionizing Dose, Displacement Damage Dose, and Single Events Effects Test Results A. Topper1, M. O’Bryan1, T. Wilcox2, M. Casey2, M. Campola2, R. Ladbury2, M. Berg1, J. Lauenstein2, E. Wyrwas3, K. Ryder2, K. Label1, D. Cochran1 1. SSAI, USA 2. NASA GSFC, USA 3. Lentech, Inc., USA
Total ionizing dose, displacement damage dose, and single event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
Compendium of Recent Radiation Test Results from the Johns Hopkins University Applied Physics Laboratory C. Pham JHP/APL, USA
Total ionizing dose, enhanced low dose rate sensitivity, and single event effects test results are presented for a variety of analog, digital, mixed signal, and radio frequency devices.
Radiation Effects Testing of Selected Voltage Regulator Microcircuits with Heavy Ions and Protons R. Koga Aerospace, USA
We present observations of heavy ion and proton induced radiation effects on selected COTS voltage regulator integrated microcircuits.
The Aerospace Corporation’s Compendium of Recent Single Event Effect Results S. Davis1, D. Mabry1, A. Yarbrough1, R. Koga1, A. Wright1, C. Langford1, J. George2 1. The Aerospace Corporation, USA 2. Los Alamos National Laboratory, USA
Single event effects testing using heavy ions and protons was performed on several commercial components to determine the response of these components to the space radiation environment.
Single Event Effect Test Results for Candidate Spacecraft Electronics T. Maksimenko1, V. Anashin1, A. Kalashnikova1, A. Koziukov1, N. Bondarenko1, K. Bukhasan1, M. Vyrostkov1, R. Mangushev1, A. Drokin1, S. Iakovlev1, A. Borisov2, A. Kryukov2 1. Institute of Space Device Engineering (Branch of URSC – ISDE), Russian Federation 2. JSC SPC ElTest, Russian Federation
We present test results on the immunity of a variety of candidate spacecraft ICs and modules to proton and heavy ion induced single event effects. Tested devices include analog devices.
Heavy Ion Test Results for Frequency Synthesizers I. Maslennikova, V. Anashin, A. Koziukov, S. Iakovlev, V. Lykov Institute of Space Device Engineering (Branch of URSC), Russian Federation
This paper presents the single event effect test results obtained at the Roscosmos Test Facilities during test campaigns in 2018 for a number of candidate spacecraft electronics, specifically frequency synthesizers.
Single-event Evaluation of Xilinx 16 nm UltraScale+™ High-Bandwidth Memory (HBM) Enabled FPGA Y. Chen, P. Maillard, J. Barton, E. Crabill, P. Kyu, J. Schmitz, M. Voogel Xilinx, Inc, USA
Single-event characterization of a Xilinx 16 nm UltraScale+ Virtex HBM-enabled FPGA was performed using both high-energy proton and neutron beams. SEE results for the HBM stack, interface and programmable logic are presented.
Recent SEE Results for Snapdragon SOCs S. Guertin, W. Parker, A. Daniel, P. Adell NASA JPL, USA
SEE test results are presented for Snapdragon 801 and Snapdragon 835 SOCs.
Single Event Upset Characterization of the Cyclone V Field Programmable Gate Array Using Proton Irradiation Q. Chen1, L. Chen2, D. Hiemstra3, V. Kirischian3 1. Xi'an Microelectronics Technology Institute, China 2. University of Saskatchewan, Canada 3. MDA, Canada
Proton induced SEU cross-sections of certain functional blocks of the Cyclone V FPGA are presented. Upset rates in the space radiation environment are estimated.
BRE440 Heavy Ion SEE Test Summary N. Kent1, J. Schaf1, I. Troxel2, J. Schaefer2, M. Gruber2 1. Moog Broad Reach, USA 2. Troxel Aerospace, USA
Heavy-ion SEE results are detailed for the radiation-hardened BRE440, a PowerPC440-based SOC processor fabricated on Honeywell’s HX5000 150 nm technology node. Statistically significant data at thirteen LETs highlight strong SEE robustness including temperature and angle effects.
ATmegaS128 8-bit Microcontroller Total Ionizing Dose and Single Event Effects G. Bourg-Cazan, J. Vrignaud Microchip Technology Nantes, France
ATmegaS128 Radiation Tolerant product capability versus radiation environment is presented. The poster provides TID, heavy ions, protons and neutron results focusing on NVM programming capability versus TID.
ATmegaS64M1 8-bit Microcontroller Total Ionizing Dose and Single Event Effects J. Bernard, J. Vrignaud Microchip Technology Nantes, France
This document describes the ATmegaS64M1 radiation tolerant product radiation characterization, to fit with New Space requirements. A description of device capability versus radiation environment is presented. The document provides TID, heavy ions, protons and neutron results.
Stratix 10 FPGA Neutron Radiation Test Results A. Keller, W. Keller Brigham Young University, USA
The neutron cross section of SEUs in Stratix 10 FPGA memory was measured to be 3.2 FIT per Mbit for configuration memory (20x less than Stratix V) and 7.1 FIT per Mbit for block memories.
Neutron Induced Single Event Upset (SEU) Testing of Commercial Flash Memory Devices M. Allenspach1, J. Bird1, M. Peters1, M. Tostanoski1, K. Hartojo1, R. Strayer1, T. Deaton2, T. Fullem3 1. Radiation Test Solutions, Inc., USA 2. Cobham, USA 3. Fluor Marine Propulsion, LLC, USA
Neutron (14 MeV) induced single event effect testing results for a 128-Mbit (S25FL128S) and 256-Mbit (S29GL256P) Flash memory using several bit patterns are presented along with cross section data and soft error rates.
Radiation-Induced Errors at Elevated Linear Energy Transfer Levels and Magnetic Error Rate Interactions in Magnetic Tunnel Junctions R. Katti Honeywell, USA
Magnetic tunnel junctions subjected to oblique-angle heavy ion irradiation and effective LET exposure to approximately 145 MeV-cm2/mg showed radiation-induced hard-error effects that are mitigated by low magnetic error rates and error correction in memory applications.
Total Dose and Heavy Ion Radiation Response of 55 nm Avalanche Technology Spin Transfer Torque MRAM J. Ingalls1, M. Gadlage1, J. Wang1, D. Bruce1, A. Williams1, R. Ranjan2 1. NSWC Crane, USA 2. Avalanche Technology Inc., USA
The total dose and heavy ion radiation responses of 55 nm non-volatile spin transfer torque memory devices from Avalanche Technology are presented, and show these devices to be inherently largely radiation tolerant.
SEE Testing of DDR2 Memories D. Hansen, F. Meraz, P. Pham, D. Smith, R. Hillman, G. Williamson Data Devices Corp., USA
Single event effect testing was performed on three DDR2 devices. The parts were characterized for a variety of SEE, including multi-bit upsets (MBU) and single event functional interrupts.
A SET Study on SRAM Memory P. Wang1, M. Glorieux2, C. Boatella Polo3, F. Lochon4, J. Benedetto5 1. 3D PLUS, France 2. iRoC Technologies, France 3. ESA ESTEC TEC-QEC, Netherlands 4. HIREX Engineering, France 5. Radiation Assured Devices, USA
We report a MBU-liked-SET during SRAM HI test. Further laser study showed that the root cause is not from the silicon but the floating pads to configure the die. A mitigation was proposed and verified.
Single Event Effect Characterization of High Density SRAMs in Bulk and SOI Technologies Y. Yu, X. Wang, H. Luo, Y. Zhi China Electronic Product Reliability and Environmental Testing Research Institute, China
The single event effect characterization of 32M bulk epitaxial SRAM and 16M SOI SRAM are tested using heavy ion. The estimated on-orbit upset rates are less than 10-10 errors/bit·day.
Laser-Induced Micro SEL Characterization of SRAM Devices M. Yingqi, H. Jianwei, S. Shipeng, Z. Xiang, C. Rui National Space Science Center, Chinese Academy of Sciences, China
This study presents micro single event latch-up characterization of SRAM by 1064 nm laser backside testing. The SEL threshold and the detailed screening of micro SEL features have been investigated by laser automatic scanning experiment.
Fast-Neutron Beam Testing at the University of Washington Medical Cyclotron Facility D. Argento, G. Moffitt, K. Marissa, E. Dorman, R. Emery UW Medical Center, Radiation Oncology, USA
The team at the UW Medical Cyclotron Facility have developed three distinct fast-neutron spectra for use in radiation effects testing: (1) Mean neutron energy of 22 MeV, with Emax = 45 MeV; (2) Emean = 10 MeV, Emax = 43 MeV; (3) Emean = 8 MeV, Emax = 43 MeV.
Radiation Tests of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology J. Lauenstein1, P. Neudeck2, K. Ryder1, E. Wilcox1, R. Buttler2, M. Carts1, S. Wrbanek2, J. Wrbanek2 1. NASA GSFC, USA 2. NASA GRC, USA
Silicon carbide junction field effect transistor (JFET) semiconductor integrated circuits capable of prolonged operation in Venus-like surface atmospheric conditions show tolerance to total ionizing dose and single-event effects, further demonstrating their suitability for extreme environments.
A summary of Mil Std 750, method 1017 neutron irradiation tests performed on JANSR2N3700, JANSR2N2369,JANSR2N2222 and JANSR2N2907 BJTs P. Schimel 1. Microchip, USA
This work will explain the results of neutron interactions on 4 JANSR BJTs. The total integral neutron fluence was stepped at 5 levels between 5×1011 n/cm2 and 1014 n/cm2. The primary effect was Hfe degradation with secondary effects including elevated Vce sat.
Impact of Single Event Effects on Key Electronic Components for COTS-based Satellite systems R. Monreal1, J. Alvarez1, J. Hollen1, G. Dennis1 1. Southwest Research Institute, USA
Single Event Effect (SEE) testing of key electronic components for COTS-based Space systems is undertaken to understand their SEE sensitivity. Results show how the SEE manifestations, even though capable of interrupting operation, can be tolerable with simple mitigation techniques while deployed in orbit.
A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash E. Wilcox1, M. Campola1 1. NASA GSFC, USA
Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results.
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+™ RFSoC Field-Programmable Gate Array under Proton Irradiation P. Davis1, L. David1, M. Learn1, D. Thorpe1 1. Sandia National Labs, USA
This study examines the single-event upset and single-event latch-up susceptibility of the Xilinx 16nm FinFET Zynq UltraScale+ RFSoC FPGA in proton irradiation. Results for SEU in configuration memory, BlockRAM memory, and device SEL are given.
Proton Characterization of RTG4 Flash-Based FPGA for LEO Environment N. Rezzak1, J. Wang1, F. Hawley1, H. Esmat1 1. Microchip, USA The single-event response of the RTG4 flash-based FPGA is characterized using 64 and 200 MeV proton sources. STMRFF, SRAMs, PLL, SERDES, FDDR, POR and in-beam reprogramming results are presented.
Heavy Ion SEE Testing of Microchip Integrated Motor Controller LX7720 M. Sureau1, N. Rezzak1 1. Microchip, USA
The Heavy Ion SEE testing results of the Microchip radiation hardened analog mixed-signal motor controller IC, the LX7720, are presented, including the complete SEL data and SET/SEU for all blocks.
Degradation Measurement of Kinect Sensor Under Fast Neutron Beamline Z. Khanam1, S. Saha1, B. Aslam1, X. Zhai1, S. Ehsan1, C. Cazzaniga2, C. Frost2, R. Stolkin3, K. McDonald-Maier1 1. University of Essex, United Kingdom 2. Rutherford Appleton Laboratory, United Kingdom 3. University of Birmingham, United Kingdom
The neutron-induced degradation of depth images acquired using a Kinect sensor is investigated through the standard metrics. The evaluated metrics indicate saturation of degradation after several hours of exposure, which is recovered through annealing.