RADIATION EFFECTS DATA WORKSHOP Chair: Jeffrey George, The Aerospace Corporation
Single-Event Latchup Measurements on COTS Electronic Devices for Use in ISS Payloads F. Irom, G. R. Allen, S. Vartanian, Jet Propulsion Laboratory
This paper reports recent single-event latchup results for a variety of microelectronic devices. The data was collected to evaluate these devices for possible use in NASA ISS payloads.
2017 Compendium of Recent Test Results of Single Event Effects Conducted by the Jet Propulsion Laboratory’s Radiation Effects Group G. R. Allen, S. Vartanian, F. Irom, L. Z. Scheick, P. C. Adell, M. D. O’Connor, S. M. Guertin, JPL
We present heavy-ion single event effects results for a variety of microelectronic devices targeted for possible use in JPL spacecraft. The compendium covers devices tested within the timeframe of August 2015 through February 2017.
Compendium of Single-Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators A. N. Bozovich, F. Irom, JPL
This data compendium reports single-event transient and total ionizing dose test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions.
Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center M. J. Campola, D. Chen, M. C. Casey, K. A. LaBel, J. A. Pellish, R. L. Ladbury, J.-M. Lauenstein, M. A. Xapsos, NASA GSFC; A. D. Topper, D. J. Cochran, E. P. Wilcox, T. Mondy, M. V. O’Bryan, K.-Y. K. Yau, AS&D, Inc.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Compendium of Current Single Event Effects Results from NASA Goddard Space Flight Center and Selected NASA Electronic Parts and Packaging Program Single Event Effects Tests M. V. O’Bryan, C. M. Szabo, M. D. Berg, AS&D, Inc.; K. A. LaBel, D. Chen, M. J. Campola, M. C. Casey, J.-M. Lauenstein, J. A. Pellish, NASA GSFC; E. J. Wyrwas, Lentech, Inc.; S. M. Guertin, JPL
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Compendium of Single Event Effects (SEE) Test Results for COTS and Standard Electronics for Low Earth Orbit and Deep Space Applications B. D. Reddell, C. R. Bailey, P. M. O’Neill, NASA Johnson Space Center; R. Gaza, C. Patel, J. Cooper, T. A. Kalb, Lockheed Martin Corporation; K. V. Nguyen, Jacobs Engineering
We present the results of SEE testing with high energy protons and with low and high energy heavy ions. This paper summarizes test results for components considered for Low Earth Orbit and Deep Space applications.
Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics S. Danzeca, P. Peronnard, G. Foucard, G. Tsiligiannis, M. Brugger, A. Masi, S. Gilardoni, CERN; R. Secondo, R. Ferraro, T. Borel, Universite de Montpellier 2
Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analyzed. The tested parts include analog, linear, digital, and hybrid devices.
A Fast and Radiation-Hard Single-Photon Counting ASIC for the Upgrade of the LHCb RICH Detector at CERN M. Fiorini, W. Baldini, R. Calabrese, A. Cotta Ramusino, E. Luppi, R. Malaguti, L. Minzoni, L. Pappalardo, L. Tomassetti, University of Ferrara and INFN Sezione di Ferrara; M. Baszczyk, P. Dorosz, W. Kucewicz, AGH University of Science and Technology and INP; A. Candelori, S. Mattiazzo, L. Silvestrin, Università degli Studi di Padova and INFN Sezione di Padova; P. Carniti, L. Cassina, A. Giachero, C. Gotti, M. Maino, G. Pessina, Università degli Studi di Milano Bicocca and INFN Sezione di Milano Bicocca
A new version of the CLARO8 ASIC has been designed in AMS 0.35um CMOS technology, based on radiation hardened by design cells, and extensively tested. Results on the complete radiation hardness characterization are presented.
Fast and Low-Cost Soft Error Testing of a COTS Microcontroller with Alpha Particle Source F. Leite, M. Silveira, R. Baginski, Centro Universitario da FEI; V. Aguiar, N. Medina, N. Added, Universidade de Sao Paulo
This work proposes a fast and low-cost setup to evaluate soft errors on digital programmable systems owing to Single Event Effects caused by ionizing radiation.
Research of Non-Contacting Laser-Based Approach for DUT Heating During SEE Test with Heavy Ion Exposure A. E. Koziukov, V. S. Anashin, E. V. Mitin, E. N. Nekrasova, URSC-ISDE
The paper presents a new heating approach for radiation hardness tests of electronic components at elevated temperature. Infrared laser radiation is used to increase temperature of the chip.
Recent Cocktail Beam Developments at the LBNL 88-Inch Cyclotron for SEE Testing J. Y. Benitez, M. B. Johnson, W. Lu, B. F. Ninemire, L. W. Phair, D. S. Todd, D. Xie, Lawrence Berkeley National Laboratory
ECR ion sources at LBNLs 88-Inch Cyclotron produce heavy ion cocktails to test the radiation hardness of spacecraft electronics. A 20MeV/u cocktail is underway. The 10MeV/u cocktail is expanded to gold.
Selectable Fluence Measurement Accuracy at the LBNL 88-Inch Cyclotron BASE Facility A. Donoghue, L. Phair, M. Johnson, S. Small, T. Gimpel, C. R. Siero, Lawrence Berkeley National Laboratory
An investigation is made of the trade-off between fluence measurement accuracy and time needed for detector calibration. Allowing users to choose fluence measurement accuracy based the type of testing being performed and time available.
Radiation Hardness Evaluation of the YHFT-DV Digital Signal Processor Y. Chi, B. Liang, Y. Sun, Y. Guo, National University of Defense Technology
The Total Ionizing Dose and Single Event Effects test results of YHFT-DV, a 32-bit floating-point digital signal processor are reported in this paper. The result shows the DSP is well radiation hardened.
Single-Event Effects Characterization of a 12-Bit 200MSps A-to-D Converter in 32nm SOI CMOS with MilliBeam and Broad-Beam Heavy-Ions A. Zanchi, M. Cabanas-Holmen, R. Brees, The Boeing Company; P. Eaton, W. Burke, Microelectronics Research Development Corporation
A 12bit 32nm SOI 200MSps ADC tested at LBNL with MilliBeam showed no upsets with LET<30, while 1-sample SETs up to 600LSB were observed at TAMU with LET ~170 MeV-cm2/mg broad-beam.
Ionizing Radiation Response of the 4558 Analog Processor / Analog-to-Digital Converter S. C. Witczak, J. J. Horner, D. C. Harms, T. S. Mason, K. E. Marino, G. E. Macejik, Northrop Grumman
The Northrop Grumman 4558 Analog Processor / Analog-to-Digital Converter was assessed for ionizing radiation tolerance through 12 krad(Si). Neither irradiation nor post-irradiation anneal has a measurable effect on the performance parameters.
Total Dose Testing of Advanced Mixed Signal ADC/DAC Microcircuits D. R. Alexander, A. Vera, J. Aarestad, University of New Mexico
Total dose test results are presented for the Maxim 1257/1258 multi-channel ADC/DAC, and the Linear Technology LTC2378-20 low power SAR. The paper discusses radiation testing challenges of complex mixed signal circuits.
Single Event Upsets Induced by a Few MeV Neutrons in SRAMs and FPGAs D. Lambert, F. Desnoyers, D. Thouvenot, J. Galinat, Nucletudes; B. Azaïs, T. Colladant, DGA
Single Event Effect (SEE) characterizations under a few MeV neutrons are presented for various commercial SRAMS and FPGAs.
Neutron Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC) J. M. Bird, M. J. Tostanoski, K. Hartojo, R. E. Strayer, Radiation Test Solutions; M. K. Peters, T. F. Deaton, Cobham RAD, Inc.; T. Z. Fullem, Bechtel Marine Propulsion Corporation
Results of neutron induced SEU testing for three devices with error correction codes: Cypress CY7C1061GE30-10BVXI and CY7C1061GE-10BVXI, and a memory system consisting of Micron MT48LC32M8A2TG-75ITD and a Tundra Tsi107 memory controller.
Single Event Upset Characterization of the Tegra K1 Mobile Processor Using Proton Irradiation Q. Chen, H. Wang, L. Chen, University of Saskatchewan; D. Hiemstra, V. Kirischinan, MDA Inc.
Proton induced SEU cross-sections of Tegra K1 mobile processor are presented. Overall upset rates of Tegra K1 in the space radiation environment are estimated.
High Energy Proton Irradiation Results for the DSP Cores of the KeyStone II System-on-Chip (SoC) 66AK2L06 Q. Chen, H. Wang, L. Chen, University of Saskatchewan; D. Hiemstra, V. Kirischinan, MDA Inc.
Proton induced SEU cross-section of DSP cores within the KeyStoneTM II system-on-chip 66AK2L06 is presented. Upset rates in the space radiation environment are estimated.
Single Event Upset Characterization of the Zynq UltraScale+ MPSoC Using Proton Irradiation D. M. Hiemstra, V. Kirischian, J. Brelski, MDA
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.
Neutron, 64 MeV Proton & Alpha Single-Event Characterization of Xilinx 16nm FinFET Zynq® UltraScale+™ MPSoC P. Maillard, M. Hart, J. Barton, J. Arver, C. Smith, XILINX, INC.
The single-event response of Xilinx 16nm Zynq® UltraScale+™ MPSoC is characterized using neutron, 64 MeV proton, thermal neutron and alpha foil irradiation sources. SEE results for the programmable logic and the processor are presented.
64 MeV Proton Single-Event Upset Characterization of Customer Memory Interface Design on Xilinx XCKU040 FPGA Y. P. Chen, P. Maillard, M. Hart, J. Schmitz, P. Kyu, D. Smith, J. Barton, XILINX, INC.
The SEU characterization of a customer memory interface design on the XCKU040 FPGA was conducted with 64MeV proton source. A corrected FIT estimation methodology is proposed using FPGA utilization factor and architectural vulnerability factor (AVF).
Experimental Methods and Results for the Evaluation of Triple Modular Redundancy SEU Mitigation Techniques with the Kintex-7 FPGA K. M. Sielewicz, G. Aglieri Rinella, M. Bonora, P. Giubilato, CERN; J. Schambach, The University of Texas at Austin; M. J. Rossewij, Utrecht University; T. Vanat, Czech Technical University in Prague
This paper describes experimental methods and results for the evaluation of triple modular redundancy SEU mitigation techniques with the Kintex-7 FPGA. Testing was performed both in the beam and fault injection tests.
SEE Test Results for the Snapdragon 820 S. M. Guertin, JPL
SEE test results are presented for proton, heavy ion, and neutron testing of the Qualcomm Snapdragon 820 and its support DDR4 device. Processor crashes and DDR4 stuck bits are the primary SEE types.
Towards a Qualification Data Set: Expanded SEE Data on the P2020 Processor S. M. Guertin, JPL
Earlier P2020 SEE data are compared and expanded to a recent die revision, significantly increasing samples tested by protons and heavy ions by five each. New static debugger, watchdog, and Ethernet tests were also employed.
Proton and Heavy Ion Testing of the Microsemi Igloo2 FPGA S. C. Davis, R. Koga, J. S. George, The Aerospace Corporation
We performed proton and heavy-ion testing of the Microsemi Igloo2 FPGA using several basic designs looking at the logic, embedded SRAM, and mathblocks as well as any SEFI or high current states.
Heavy-Ion Device Cross-Section Response in Magnetic Tunnel Junctions for a Radiation Hardened 16Mb Magnetoresistive Random Access Memory (MRAM) R. R. Katti, Honeywell International, Inc.
Heavy-ion cross-sections from MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated; with distributions similar to thermally-accelerated resistance and magneto-resistance shifts that also depend physically on tunnel barriers.
Single Event Effect Assessment of a 1-Mbit Commercial Magneto-Resistive Random Access Memory P. C. Adell, S. Moro, Facebook Inc.; L. Gouyet, C. Chatry, TRAD Corp; B. Vermeire, Space Micro Inc.
The single-event susceptibility of a commercial 1-Mbit MRAM was experimentally evaluated. Results show that the memory was not sensitive to SEL, SEU or MBUs whereas it exhibited SEFIs when operated in dynamic mode.
Total Ionizing Dose Effects in Commercial Floating-Gate-Alternative Non-Volatile Memories M. J. Gadlage, M. J. Kay, D. I. Bruce, A. H. Roach, A. R. Duncan, A. M. Williams, J. D. Ingalls, NSWC CRANE
The total dose response of commercially-available floating-gate-alternative non-volatile memories is characterized. The response of MRAM, FRAM, CBRAM, ReRAM, SONOS, and PCRAM devices are compared to a relatively radiation tolerant NAND flash.
ELDRS Characterization up to 100 krad(Si) of Texas Instruments Dual Amplifier LM158 B. Myers, K. Kruckmeyer, T. Trinh, Texas Instruments
The ELDRS characterization data is presented for TI’s dual op amp LM158, where it is shown that results for the low dose rate performance are better. The LM158 is ELDRS free to 100 krad.
Radiation Effects Characterization of TI LMH5401-SP Ultra-Wideband Fully Differential Amplifier (FDA) S. Narayanan, V. Narayanan, C. Yots, J. Cruz-Colon, Texas Instruments
The SEE and TID (up to 50 krad) effects of the LMH5401-SP, industry leading fully differential amplifier, are presented. No latch up events were observed up to an LET of 85 MeV-cm2/mg at 125˚C.
Radiation Effects Characterization of TI OPA4277-SP High Precision Operational Amplifier V. Narayanan, S. Narayanan, W. Vonbergen, J. Cruz Colon, Texas instruments
The OPA4277-SP, precision operational amplifier with very low offset is shown to withstand total ionizing dose of 50 krad. No latch-up was observed up to 86MeV at 125˚C. Single event transients are also presented.
Radiation Evaluation of the CDCLVP111-SP Low Voltage 1:10 LVPECL Clock Distributor J. Cruz-Colon, V. Narayanan, W. Vonbergen, Texas Instruments
Single Events Effect (SEE) characterization results for LVPECL 1:10 Clock Distributor is summarized, showing very robust SEE performance up to LETEFF=65.1 MeV-cm2/mg
SEU Characterization of Embedded 130nm Compiled SRAMs in a Proton Environment M. Von Thun, D. Walz, R. Dumitru, A. Wilson, T. Farris, Cobham Semiconductor Solutions
Embedded 130nm SRAMs from a Cobham RadHard Library were characterized for single event upsets and functional interrupts in proton and heavy ion environments.
Heavy Ion and TID Characterization of 3.3V Voltage Supervisors A. L. Wilson, D. Walz, Y. Lotfi, K. G. Merkel, M. Von Thun, T. Farris, Cobham Semiconductor Solutions
We present Single Event Transient and TID characteristic data for the UT01VS33D single channel voltage supervisor fabricated in a 0.35μm triple-well mixed-signal CMOS process.
Proton Testing Results for Kaman KD-5100 Differential Inductive Position Measuring Systems B. H. McGuyer, S. Moro, Facebook Inc.; R. J. Milanowski, M&A Inc.; N. Hall, B. Vermeire, Space Micro Inc.
We report proton testing of a position measuring system, the Kaman KD-5100, with applications including mirror positioning for laser beam control. We measure a device response likely due to TID and/or displacement damage.
Single Event Effects Assessment of a Commercial 12-Megapixel CMOS Imager F. Hardy, B. Vermeire, M. Jacox, Space Micro, Inc.; R. Milanowski, M&A, Inc.; S. Moro, Facebook, Inc.
A commercial off-the-shelf 12-Megapixel CMOS sensor was irradiated with 105 MeV protons to a fluence of 3.5E11 protons/cm2. No latch-up events occurred. Pixel brightness increases with fluence are reported.
Single Event Upset and Total Ionising Dose Assessment of Commercial Optical Coherent DSP ASIC R. J. Aniceto, S. Moro, Facebook; C. Isabelle, R. Milanowski, N. Hall, B. Vermeire, Space Micro Inc.
Proton beam testing of optical coherent application-specific integrated circuit to calculate single event upset cross sections at 64 MeV and 480 MeV. No performance degradation for total ionizing dose exposure to 170 krad(Si).
Characterization of the Effects of SEE, TID, and DDD on the UC1875-SP Controller J. S. Hack, Northrop Grumman Mission Systems
This paper explores the effects of proton induced total ionizing dose and displacement damage, as well as heavy ion induced single event performance of the UC1875-SP controller.
Characterization of the Effects of SEE, ELDRS, and DDD on the UC1708 Driver J. S. Hack, Northrop Grumman Mission Systems
This paper explores the combined effects of gamma ray-induced total ionizing dose and neutron-induced displacement damage, as well as addressing heavy ion induced single event performance of the UC1708 driver.
Space and Terrestrial Radiation Response of Silicon Carbide Power MOSFETs A. Akturk, J. McGarrity, A. Markowski, B. Cusack, CoolCAD Electronics LLC; R. Wilkins, Prairie View A&M University
Effects of heavy ion, terrestrial neutron and ionizing dose radiation on high voltage silicon carbide power MOSFETs are reported along with likely failure modes due to single event effects resulting from heavy ion exposures.
Proton Cross-Sections from Heavy-Ion Data in GaAs Devices D. L. Hansen, Data Device Corporation
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices using a number of different models. Model accuracy is checked using data from the published literature.
Displacement Damage Testing of the Intersil ISL70023SEH and ISL70024SEH Gallium Nitride Power Transistors N. W. van Vonno, O. Mansilla, W. H. Newman, L. G. Pearce, E. J. Thomson, Intersil
We report the results of displacement damage (DD) testing using 1 MeV equivalent neutrons of the Intersil ISL70023SEH and ISL70024 gallium nitride (GaN) power transistors together with a brief discussion of their structure and performance.
Destructive Single-Event Effects Testing of the Intersil ISL70023SEH and ISL70024SEH Gallium Nitride Power Transistors N. W. van Vonno, O. Mansilla, W. H. Newman, L. G. Pearce, E. J. Thomson, Intersil
We report the results of destructive single-event effects testing of the Intersil ISL70023SEH and ISL70024SEH gallium nitride (GaN) power transistors together with a brief discussion of the structure and performance of these devices.
A Radiation Hardened, High-Voltage, High-Precision Analog Family W. H. Newman, N. W. van Vonno, O. Mansilla, L. G. Pearce, E. J. Thomson, Intersil
Intersil has developed a family of radiation hardened high voltage analog parts in a complementary bipolar process on bonded wafer SOI. PR40 parts include precision op amps, voltage references and a temperature sensor.
1.8 MeV Proton Testing of Three Different Thermally Stabilized GaN HEMT RF Power Devices in Three Operational Modes M. W. McCurdy, R. D. Schrimpf, D. M. Fleetwood, Vanderbilt University; K. Bole, B. Poling, Air Force Research Laboratory
We report summary test results of three commercially available GaN HEMT RF power devices irradiated with 1.8 MeV protons in three operational modes. Thermoelectric cooling was used to minimize thermally induced parametric shifts.
Recent Radiation Test Results for Trench Power MOSFETs J.-M. Lauenstein, M. C. Casey, R. L. Ladbury, K. A. LaBel, NASA GSFC; E. P. Wilcox, A. M. Phan, H. S. Kim, A. D. Topper, AS&D Inc.
Single-event effect (SEE) test results are presented for commercial/automotive grade and radiation-hardened trench power MOSFETs. Commercial trench MOSFETs showed unexpected single-event degradation when unbiased.
Testing the Radiation Hardness of Thick-Film Resistors for a Time-of-Flight Mass Spectrometer at Jupiter with 18 MeV Protons D. Lasi, M. Tulej, P. Wurz, University of Bern; T. S. Carzaniga, K. P. Nestreuk, S. Braccini, Albert Einstein Center for Fundamental Physics; H. R. Elsener, Swiss Federal Laboratories for Materials Science and Technology
18 MeV-proton irradiations with real time monitoring of sample temperature and electrical parameters, combined with chemical composition measurements, are applied to assess the hardness of thick-film resistors for a mass spectrometer at Jupiter.
Representativeness of 60Co Testing for EEE Components to be Flown in JUICE M. Pinto, P. Gonçalves, P. Assis, M. Ferreira, Space, LIP; M. Muschitiello, C. Poivey, ESTEC
The representativity of 60Co testing for the Jovian electron environment was tested by comparing TID degradation of selected EEE components irradiated with 60Co gammas and with electron beams with energy above 10 MeV.
The Impact of Annealing on the Following Radiation Degradation Rate of Bipolar Devices A. S. Bakerenkov, A. S. Rodin, V. S. Pershenkov, V. A. Felitsyn, Y. D. Bursian, Moscow Engineering Physics Institute
The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.
Total Dose Radiation Response of N-Channel Enhancement Mode Field Effect Transistors over Wide Operation Temperature Range A. S. Bakerenkov, V. A. Felitsyn, V. V. Orlov, A. S. Rodin, G. I. Zebrev, National Research Nuclear University MEPhI
Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80K to 350K.
TID, ELDRS and DEE Hardening and Testing on Mixed Signal Telemetry LX7730 Controller M. Sureau, R. Stevens, M. Leuenberger, N. Rezzak, D. Johnson, Microsemi
TID, ELDRS and SEE hardening and testing of the first radiation hardened analog mixed-signal telemetry controller IC, the LX7730, are presented.
Heavy Ion and Proton Induced Radiation Effects on Differential Bus Transceiver Microcircuits R. Koga, S. Davis, J. George, The Aerospace Corp
We present observations of proton and heavy ion induced single event effects on selected COTS differential bus transceiver integrated circuits.
Single Event Transient and Functional Interrupt in Readout Integrated Circuit of Infrared Image Sensors at Low Temperatures L. Artola, A. Al Youssef, G. Hubert, Onera; S. Ducret, R. Buiron, S. Parola, Sofradir; C. Poivey, ESA
This work presents the measurements of single event transient and functional interrupt on two designs of readout integrated circuit under heavy ion irradiations at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited
Heavy Ion Latch-up Test on dsPIC Microcontroller to Be Used in ExoMars 2020 Mission P. Manzano, M. Álvarez, S. Sampedro, M. J. Rivas, I. Traseira, J. Manzano, J. R. Mingo, INTA - Spain; A. Martín-Ortega, N. Andrés, ISDEFE - Spain
Heavy ion Latch-up test on Microchip Microcontroller has been performed in order to analyze it suitability for ExoMars Mission. SEL rate estimation show it can be used for non-critical applications.
An Improved SEL Test of the ADV212 Video Codec E. P. Wilcox, AS&D, Inc.; M. J. Campola, NASA-GSFC; S. Nadendla3, M. Kadari, Jackson & Tull; R. A. Gigliuto, Formerly of AS&D, Inc.
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.
Ionizing Radiation Effects in Non-Radiation-Tolerant Digital Video Cameras E. Simova, P. A. Rochefort, J. DeVreede, Canadian Nuclear Laboratories Limited
Commercial digital video cameras were irradiated with gamma-rays at various dose rates up to the total ionizing dose (TID) for catastrophic failure. Camera performance with respect to both dose rates and TID were analyzed.
Tests of RHBD Portable Library Configurations with DICE, TAG4, Dual Rail, TMR and New 10T Voting Latch Using UMC 65 and XFAB 180 nm R. L. Shuler, NASA Johnson Space Center
We describe heavy ion tests of RHBD configurations (varying guard timing, spacing, number of strings), including DICE, TAG4, TMR, IO pads and a new 10T voting latch, and identify strategies for a portable nanoscale library.
Single Event Effects Characterization of BAE Systems RADNET(TM) 1848-PS RapidIO(R) Packet Switch A. T. Kelly, J. C. Rodgers, S. Johnson, R. D. Brown, BAE Systems; A. Adamson, SEAKR Engineering, Inc.
At-speed (3.125 Gbaud) heavy ion and proton single event effects characterization data on BAE Systems RADNET 1848-PS Application Specific Standard Product will be presented.
Architectural Consequences of Radiation Performance in a Flash NAND Device D. L. Hansen, R. Hillman, F. Meraz, G. Williamson, Data Devices Corporation
This paper reports single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error-correction architectures
Single Event and Total Dose Testing of a 4Gb Flash NAND Device D. L. Hansen, F. Meraz, J. Montoya, S. Roberg, G. Williamson, Data Devices Corporation
Total ionizing dose (TID) and single event effects testing was performed on 4 Gb NAND flash devices. The results are presented here and the consequences for error-correction architectures.
Measurement of the Neutron Field Characteristics Inside and Outside the Vault of a 70 MeV Cyclotron J. Dubeau, S. S. Hakmana Witharana, E. M. Sacay, DETEC Inc.; R. J. Peterson, University of Colorado; M. Kiselev, Zevacor Molecular Inc.
The 70 MeV cyclotron at Zevacor produces intense neutron fields which can be used for the testing space mission equipment. Results of their characterization in terms of their intensities and their energy distributions are presented.
Guide to the 2016 IEEE Radiation Effects Data Workshop Record D. M. Hiemstra, MDA
The 2016 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.