Session F

Session F - Single-Event Effects: Transient Characterization

Wednesday, July 19, 2017

SESSION F
2:40 PM
Acacia Ballroom

SINGLE-EVENT EFFECTS: TRANSIENT CHARACTERIZATION
SESSION INTRODUCTION
Chair: Shi-Jie Wen, Cisco Systems

F-1
2:45 PM

DAMSEL - Dynamic and Applicative Measurement of Single Events in Logic
M. Glorieux, A. Evans, D. Alexandrescu, IROC Technologies; C. Boatella Polo, V. Ferlet-Cavrois, ESA

This paper describes a circuit for individually measuring both the impact of SEUs and SETs in realistic, synchronous digital circuits. Heavy-ion, pulsed laser and simulation results are presented.

F-2
3:00 PM

Analysis of Single Event Transient Duration and Electrical Delay with Implications for Near-Threshold Mitigation Techniques
J. A. Maharrey, J. S. Kauppila, R. C. Quinn, P. Nsengiyumva, D. R. Ball, T. D. Haeffner, E. X. Zhang, B. L. Bhuva, W. T. Holman, L. W. Massengill, Vanderbilt University

SETs in 14nm bulk FinFET logic chains have been experimentally measured across bias. The efficacy of filter-based mitigation is assessed by analyzing the voltage dependency of SET duration against the characteristic electrical inverter delay.

F-3
3:15 PM

Correlation of the Spatial Variation of Single-Event Sensitivity with Thermo-Reflectance Thermography in AlxGa1-xN/GaN HEMTs
A. Khachatrian, Sotera Defense Solutions; N. J.-H. Roche, Montpellier University; L. B. Ruppalt, J. G. Champlain, A. D. Koehler, S. P. Buchner, T. J. Anderson, K. D. Hobart, J. H. Warner, D. P. McMorrow, NRL; V. Ferlet-Cavrois, M. Muschitiello, European Space Agency; K.-O. Voss, Gesselschaft fuer Schwerionenforschung

Spatial variation of Single Event Transients generated in AlxGa1-xN/GaN HEMTs are studied using focused ion beams and laser light. Regions of enhanced SET sensitivity overlap those with large temperature changes observed using thermo-reflectance.

Thursday, July 20, 2017

2:45 - 5:10 PM
Mardi Gras E-H Ballrooms

POSTER SESSION
Chair: Marta Bagatin, DEI - University of Padova

PF-1

Delay Monitor Circuit for Sensitive Nodes in SRAM-Based FPGA
M. Darvishi, Y. Audet, Ecole Polytechnique de Montreal; Y. Blaquiere, Ecole de Technologie Superieure (ETS)

This paper presents a novel monitor circuit architecture and experiments performed for detection of extra combinational delays in a high frequency SRAM-Based FPGA on delay sensitive nodes due to transient ionizing radiation.

PF-2

On-Chip Relative SET/SEU Susceptibility Test Circuit for ICs Working in Real Time
P. Hao, S. Chen, Z. Wu, National University of Defense Technology

A test circuit for measuring relative SET/SEU sensitivity of each node in circuits working in real time is proposed for first time. This is significant for IC design with high reliability and low overhead.

PF-3

Evidence of Pulse Quenching in AND Gates in 65 Nm Bulk CMOS by Experimental Probing of Full Single-Event Transient Waveforms
M. Mitrovic, M. Hofbauer, K. Schneider-Hornstein, B. Goll, H. Zimmermann, Institute of Electrodynamics; K.-O. Voss, GSI Helmholzzentrum fur Schwerionenforschung GmbH

Full waveforms of single-event transients in AND2 gates under focused heavy-ion micro-beam irradiation were experimentally measured, showing evidence of charge-sharing induced pulse quenching, depending on hit position and logic state.