Session F

Session F - Dosimetry

Wednesday, July 18, 2018

SESSION F
10:40 AM
Monarchy Ballroom

DOSIMETRY
SESSION INTRODUCTION
Chair: Joe Benedetto

F-1
10:45 AM

SRAM Dosimeter for Characterizing the TRIUMF Proton and Neutron Beams
E. Blackmore, M. Trinczek, TRIUMF; K. Jiang, M. Sachdev, D. Wright, University of Waterloo

An array of thirty 16 Mbit SRAMs has been used to characterize the proton and neutron beams used for radiation testing at TRIUMF. Measurements include SEU cross sections, beam profiles, collimator design and shielding effects.

F-2
11:00 AM

A Flexible Radiation Monitor Based on an SRAM Memory with Dynamic Voltage Control
J. Prinzie, S. Thys, B. Van Bockel, J. Wang, P. Leroux, ESAT-ADVISE

A flexible SRAM based radiation monitor is presented. The sensitivity is adjustable through the SRAM supply voltage. Experimental results are shown with heavy ions and high-energy protons. Furthermore, multi-bit upset rates are analyzed.

F-3
11:15 AM

A Low-Power, Real-Time Displacement Damage Dosimeter (RT3D)
J. H. Warner, C. D. Cress, P. P. Jenkins, J. R. Lorentzen, D. A. Scheiman, M. K. Yakes, R. J. Walters, Naval Research Laboratory; R. Hoheisel, The George Washington University

We describe a real-time displacement damage dosimeter comprised of a GaAs sensor and measurement electronics. The dosimeter measures the diode dark current and determines the displacement damage dose based on a calibration curve.

F-4
11:30 AM

Dosimetry Mapping of Mixed Field Radiation Environment Using Distributed Optical Fiber Sensing and FLUKA Simulation
D. Di Francesca, A. Infantino, Y. Kadi, M. Brugger, CERN; G. Li Vecchi, CERN and University Jean Monnet of Saint Etienne; S. Girard, A. Alessi, University Jean Monnet of Saint Etienne

We study the radiation response of a P-doped single mode optical fiber to Co-60 γ-rays and to a mixed field radiation environment in the aim of coupling distributed optical fiber dosimetry with FLUKA simulation.

F-5
11:45 AM

X-Rays, Gamma-Rays and Proton Beam Monitoring with Multimode Nitrogen-Doped Optical Fiber
S. Girard, A. Morana, I. Reghioua, A. Alessi, E. Marin, A. Boukenter, Y. Ouerdane, Universite de Saint-Etienne; D. Di Francesca, Y. Kadi, M. Brugger, CERN; C. Hoehr, M. Trinczek, TRIUMF; P. Paillet, O. Duhamel, CEA DAM; C. Duzenli, British Columbia Cancer Agency; G. Li Vecchi, Universite de Saint-Etienne and CERN

We investigated the radioluminescence and optically-stimulated luminescence properties of a 50μm core diameter N-doped fiber. This fiber provides precise dose rate and dose measurements and very promising characteristics for protontherapy beam dosimetry.

1:30 - 4:30 PM
Queen's 4-6 Ballrooms

POSTER SESSION
Chair: Nathan Nowlin, Sandia National Laboratories

PF-1

TID Evaluation System with on-Chip Electron Source and Programmable Sensing Mechanisms on FPGA
K. Maragos, G. Lentaris, D. Soudris, National Technical University of Athens; F. Di Capua, L. Campajola, M. Campajola, University of Naples Federico II; G. Furano, A. Tavoularis, L. Santos, ESTEC, ESA

We combine HW and SW techniques to perform onchip irradiation and characterization of SRAM SoC FPGAs. We present a methodology for modeling TID effects, test setup with Sr90/Y90 source, and preliminary results on Zynq.

PF-2

Radiation Analysis and Shielding Optimization of RADEM, a Radiation Hard Electron Monitor for the JUICE Mission
M. Pinto, P. Goncalves, LIP; W. Hajdas, A. Mrigakshi, PSI; A. Marques, J. C. Pinto, EFACEC SA

Radiation analysis of RADEM, to be flown in the JUICE mission, was computed with Geant4. Shielding was optimized to ensure TID and DD levels compatible with all EEE components sensitivity. SEU rates were also calculated.

PF-3

Initial Assessment of NurFETs Suitability for Radiation Sensors
S. Kaya, R. Lok, S. Abubakar, A. Aktag, H. Karacali, E. Yilmaz, Center for Nuclear Radiation Detectors Research and Applications and Abant Izzet Baysal University

Initial device characteristics and Co-60 gamma irradiation response of NurFETs fabricated in NURDAM-Turkey have been investigated. Various gate oxide thicknesses were studied and obtained results were compared with commercial RadFETs.

PF-4

Analysis of RADFET Response at Different Dose Rates and Re-Interpretation of Flight Data from MERLIN Experiment During Giove A Mission
A. Jaksic, R. Duane, N. Vasovic, Tyndall National Institute; E. Yilmaz, Center for Nuclear Radiation Detectors Research and Applications; S. Martinez, Universidad Autonoma de Madrid; A. Lalena, University of Granada; S. Stankovic, Institute for Nuclear Sciences Vinca; G. Ristic, Faculty of Electronic Engineering; M. Poizat, ESA-ESTEC

We have performed detailed calibration at different dose rates of Tyndall National Institute RADFETs. We discuss microscopic mechanisms underlying observed response and re-interpret flight data from ESA’s MERLIN experiment during Giove A mission.

PF-5

SOI Thin Microdosimeter Detectors for Low Energy Ions and Radiation Damage Studies
B. W. James, J. Vohradsky, L. T. Tran, D. Bolst, M. Carr, V. Pan, S. Guatelli, A. Rosenfeld, University of Wollongong; D. Hinde, M. Dasgupta, A. Stuchbery, Australian National University; D. Prokopovich, M. Reinhard, Australian Nuclear Science and Technology Organization; V. Perevertaylo, M. Povoli, A. Kok, SINTEF

The response of 3D silicon microdosimeters developed by CMRP were investigated with low energy ions. The SOI microdosimeters were able to measure LET of different energies of ions, as well as conduct microdosimetric measurements.

PF-6

Uncertainty Characterization of Silicon Damage Metrics
P. J. Griffin, Sandia National Laboratories

High fidelity uncertainty characterizations are provided for radiation damage metrics relevant to the modeling of silicon damage. Uncertainty contributors addressed include the nuclear data, damage partition function, threshold treatment, and model defect.

LN-PF-8

Effects of Implant and Post-Implant Anneal on Sensitivity and Fading of RADFETs
A. M. McGarrigle, Tyndall National Institute and Cork University Hospital; R. Duane, N. Vasovic, A. Jaksic, Tyndall National Institute; A. Barry, UPMC

We investigate the effects of boron implant through the gate oxide and post-implant anneal on sensitivity and fading of RADFETs. We discuss underlying microscopic mechanisms and implications of our findings to dosimeter design.