Session F

Session F - BASIC MECHANISMS

Wednesday, July 10, 2019

SESSION F
9:35 AM
Salons C,D,E

BASIC MECHANISMS
SESSION INTRODUCTION
Chair: Lili Ding (NINT)

F-1
9:40 AM

Microdose Reliability
T. Oldham, C. Whitney, C. Arutt
Ball Aerospace, USA

This paper analyzes underlying mechanisms for certain reliability failures in memories exposed to heavy ion irradiation. Although the failures are well-known, they have not generally been recognized as a microdose effect.

F-2
9:55 AM

Ionizing Radiation Tolerance of Stacked Si3N4-SiO2 Gate Insulators for Power MOSFETs
K. Muthuseenu, H. Barnaby, A. Patadia, K. Holbert, A. Privat
Arizona State University, USA

Metal-nitride-oxide-semiconductor capacitors are shown to exhibit a high tolerance to irradiation. Electrical characterization and TCAD simulations are performed to characterize these effects. Thick oxide-nitride layer can be used as gate insulator in power MOSFETs.

F-3
10:10 AM

Total-Ionizing-Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics
S. Bonaldo1, S. Zhao2, A. O’Hara2, M. Gorchichko2, E. Zhang2, S. Gerardin1, A. Paccagnella1, N. Waldron3, N. Collaert3, V. Putcha3, D. Linten3, S. Pantelides2, R. Reed2, R. Schrimpf2, D. Fleetwood2
1. DEI - University of Padova, Italy
2. Vanderbilt University, USA
3. IMEC, Belgium

Radiation-induced buildup of defects in HfO2 and Al2O3 dielectric layers of InGaAs FinFETs is evaluated under different bias conditions through DC static characterization, noise vs. temperature measurements, and density-functional theory calculations.

Thursday, July 11, 2019

1:45 - 4:30 PM
Salons A,B,F

POSTER SESSION
Chair: Ethan Cannon, Boeing

PF-1

Effects of High-Energy Ion Beams on Double-interface CoFeB/MgO Ultrathin Films
B. Wang1, Z. Wang1, K. Cao1, S. Yan1, Y. Zhao2, J. Liu3, P. Zhai3, G. Guo4, H. Zheng2, S. Yuan5, Y. Zhang1, W. Zhao1
1. Beihang University, China
2. Beijing Microelectronics Technology Institute, China
3. Chinese Academy of Science, China
4. China Institute of Atomic Energy, China
5. Tsinghua University, China

Effects of Ta/proton ions on double-interface CoFeB/MgO films were evaluated. The results indicated that the coercivity after Ta irradiation was decreased. Whereas the films were resistant to proton irradiation. We proposed physical and structural analysis.

PF-2

Modeling Single-Event Effects in Heterojunction Bipolar Transistors from 14 MeV Neutrons
M. Jasica, W. Wampler, G. Viskelethy, E. Bielejec
Sandia National Laboratories, USA

Effects from 14 MeV neutron collisions in GaAs are modeled from ionizing and non-ionizing energy loss recoil spectra. Measured inverse gain changes from single displacement cascades were found to agree well with the model.

PF-3

Total Ionization Dose Effects of N-type Tunnel Field Effect Transistor (TFET) with Ultra-shallow Pocket Junction
J. Bi 1, J. Chu1, G. Xu1, B. Li1, K. Xi1, H. B. Wang2, M. Liu1, S. Majumdar3
1. IMECAS, China
2. Hohai University, China
3. The ICFAI University, India

N-type tunnel transistor with an ultra-shallow N+ pocket junction has been fabricated. Total ionizing dose (TID) effects on TFET were investigated by 60Co γ-rays. In general, the TFETs exhibit excellent anti-radiation performance up to 1 Mrad(Si).

PF-4

Dose Response of MOS Transistors Irradiated at Low Temperatures
J. Dardié1, J. Boch2, A. Michez2, A. Touboul2, J. Vaillé2, F. Saigné2, F. Bezerra3, P. Girones4, J. Favre5
1. TMI-Orion and IES, France
2. IES, France
3. CNES, France
4. CEA, France
5. TMI-Orion, France

The effect of dose on MOS transistors is investigated for irradiation performed at low temperatures. Degradation of threshold voltage and drain off-state current is shown and discussed in terms of physical mechanisms.

PF-5L

Observation of Radiation Induced Leakage Current Defects in MOS Oxides with Multi-Frequency Electrically Detected Magnetic Resonance
S. Moxim1, J. Ashton1, P. Lenahan1, S. King2
1. Penn State University, USA
2. Intel Corporation, USA

We report high and low frequency electrically detected magnetic resonance measurements on radiation induced leakage currents in irradiated Si/SiO2 MOS structures.