Session H - PHOTONIC DEVICES AND INTEGRATED CIRCUITS
Thursday, July 11, 2019
SESSION H 9:45 AM Salons C,D,E
PHOTONIC DEVICES AND INTEGRATED CIRCUITS SESSION INTRODUCTION Chair: Vincent Goiffon (ISAE-SUPAERO)
H-1 9:50 AM
Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform G. Tzintzarov1, A. Ildefonso1, P. Goley1, M. Frounchi1, J. Campbell1, A. Khachatrian2, S. Buchner2, D. Mcmorrow2, J. Warner2, M. Kaynak3, L. Zimmermann3, J. Cressler1 1. Georgia Institute of Technology, USA 2. Naval Research Laboratory, USA 3. IHP, Germany
The propagation of single-event transients from the electronic to the photonic domain was studied using pulsed laser measurements and simulations. Implications for photonics communication systems are presented.
H-2 10:05 AM
Comparison of X-ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors A. Le Roch1, V. Goiffon2, C. Virmontois3, P. Paillet4, J. Warner5, J. Belloir3, P. Magnan2 1. ISAE-SUPAERO and CNES, France 2. ISAE-SUPAERO, France 3. CNES, France 4. CEA DAM, France 5. Naval Research Laboratory, USA
X-ray and electron irradiation induced dark current distributions and random telegraph signal are investigated in Pinned Photodiode (PPD) CMOS Image Sensors. The analyses provide new insights on TID induced dark current sources in PPD CIS.
H-3 10:20 AM
Pre- and Post-Annealing Discrete Switching Fluctuations of Dark Count Rate in Two Proton-Irradiated CMOS SPAD Structures F. Di Capua1, D. Fiore2, M. Campajola1, E. Sarnelli3, C. Nappi3 1. Università di Napoli Federico II and INFN, Italy 2. Università della Calabria, Italy 3. CNR - SPIN, Italy
In this work we studied the random telegraph signals of two SPAD layouts after proton irradiation. Measurements of RTS time constants vs. temperature and isochronal annealing at different temperature steps allow insight into RTS origin.
H-4 11:05 AM
In Situ Deep-level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated In0.54Ga0.46As Photodiodes G. Nelson1, G. Ouin1, S. Polly1, K. Wynne2, A. Haberl2, W. Lanford2, R. Lowell3, S. Hubbard1 1. Rochester Institute of Technology, USA 2. University at Albany, USA 3. Dynamic Radiation Solutions, USA
InGaAs photodiodes were irradiated at low temperature and the defect profile was extracted before room-temperature annealing could occur. No low-temperature-only traps were found, but annealing of the dominant mid-gap trap began as low as 150 K.
H-5 11:20 AM
Radiation Effects on WDM and DWDM Architectures of Pre-Amplifier and Boost-Amplifier A. Ladaci1, M. Aubry2, S. Girard3, L. Mescia4, A. Laurent5, T. Robin5, B. Cadier5, M. Boutillier6, J. Mekki6, E. Marin3, B. Sane3, Y. Ouerdane3, A. Boukenter3 1. Den–Service d’Etudes Analytiques et de Réactivité des Surfaces (SEARS), CEA, Université Paris-Saclay, France 2. CNES / iXblue / Laboratoire Hubert Curien / Politecnico di Bari, France 3. Université de Saint Etienne, France 4. Politecnico di Bari, Italy 5. iXblue, France 6. CNES, France
We investigated the radiation effects on WDM and DWDM architectures of pre-amplifier and boost-amplifier. The radiation-hardened and normal active fibers will be compared. The gain degradation is very limited for amplifiers made with radiation-hardened fiber.
H-6 11:35 AM
Radiation-Response of Distributed Feedback (DFB) Bragg Gratings for Space Applications A. Morana1, E. Marin1, S. Girard1, L. Lablonde2, E. Pinsard2, G. Melin2, T. Robin2, A. Boukenter1, Y. Ouerdane1 1. Laboratory Hubert Curien, France 2. iXBlue Photonics, France
The radiation-response of DFB Bragg gratings was studied up to the total ionizing dose of 1 kGy. The ultra-narrow pass-band peaks are almost not influenced by radiation, independently of the radiation-response of the Bragg gratings.
H-7 11:50 AM
Transient and Steady State Radiation Response of Phosphosilicate Optical Fibers: Influence of H2 S. Girard1, V. De Michele1, A. Alessi1, C. Marcandella2, D. Di Francesca3, P. Paillet2, A. Morana1, S. Agnello4, M. Cannas4, M. Gaillardin2, E. Marin1, A. Boukenter1, Y. Ouerdane1 1. Université de Saint Etienne, France 2. CEA DAM, France 3. CERN, Switzerland 4. Università di Palermo, Italy
The response of a phosphorus-doped multimode optical fiber is investigated under both transient and steady state irradiations. We also evaluate the influence of a hydrogen pre-loading on the fiber radiation induced attenuation levels and kinetics.
1:45 - 4:30 PM Salons A,B,F
Poster Session Chair: Ethan Cannon, Boeing
Proton Radiation Effects on InGaAs/InP SPADs A. Tosi1, F. Signorelli1, M. Sanzaro1, A. Giudice2, M. Bagatin3,5, S. Gerardin3,5, M. Zahidy4, G. Vallone4,5, P. Villoresi4,5 1. Politecnico di Milano, Italy 2. Micro Photon Device Srl, Italy 3. DEI - Padova University and INFN-PD, Italy 4. University of Padova, Italy 5. Istituto Nazionale di Fisica Nucleare, Italy
We present an experimental study of proton radiation effects on the performance of InGaAs/InP Single Photon Avalanche Diodes, used in space communications and remote sensing applications, where single-photon detectors for the near-infrared wavelengths are required.
Comparison of 1D and 3D Electric Field Enhancement Analytical Models to Calculate the Dark Current Non-Uniformity K. Lemiere, C. Inguimbert, T. Nuns ONERA, France
A three-dimensional electric field enhancement model is proposed for our Monte Carlo tool used to calculate the dark current non-uniformity, in order to better estimate the hot pixels number in the distribution tail.
Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage P. Goley1, M. Frounchi1, G. Tzintzarov1, N. Dodds2, N. Nowlin2, J. Cressler1 1. Georgia Institute of Technology, USA 2. Sandia National Laboratories, USA
Waveguide-integrated p-i-n germanium-on-silicon photodiodes, from a commercial silicon-based integrated photonics platform, were exposed to fast neutron irradiation. The devices are experimentally shown to be highly resilient to displacement damage
Proton Irradiation Effect on High Efficient Organic-Inorganic Metal Halide Perovskite Solar Cell X. Zhang1, L. Wang1, B. Li1, C. Liang2, H. Zhang2, C. Ji2, F. Sun2, J. Yang3, X. Li3, J. Gao1, B. Li1, M. Liu1, Y. Huang1, J. Luo1, Z. Han1, X. Liu1 1. Chinese Academy of Sciences, China 2. Beijing Jiaotong University, China 3. Harbin Institute of Technology, China
Through 50 keV proton irradiation, the tolerance of perovskite solar cell and the internal physical mechanism after irradiation were studied in detail by various optical testing methods.