HARDNESS ASSURANCE SESSION INTRODUCTION Chair: Jerome Boch, University of Montpellier
J-1 1:45 PM
Hardness Assurance in Advanced Semiconductor Packaging with Krypton-85 Leak Testing G. Lum, Lockheed Martin Space Systems Company; D. Beutler, MannaTech Engineering, LLC; D. Walters, L3 Applied Technologies; W. P. Ballard, retired from Sandia National Laboratories
Significant gain degradation was observed from Kr-85 leak testing of a bipolar discrete. The implications for hardness assurance are raised in advanced hermetic semiconductor packaging.
J-2 2:00 PM
Application of a Focused, Pulsed X-Ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits S. D. LaLumondiere, N. P. Wells, D. M. Cardoza, E. C. Dillingham, J. P. Bonsall, P. Karuza, W. T. Lotshaw, S. C. Moss, The Aerospace Corporation; D. L. Brewe, Sector 20; R. D. Schrimpf, A. L. Sternberg, Vanderbilt University
We demonstrate the utility of focused, pulsed x-rays for localized TID effect testing of analog integrated circuits. Two dimensional mapping of sensitive regions of transistors in the LM139 is used to demonstrate the technique.
J-3 2:15 PM
System Level Radiation Qualification of COTS-Based Control Systems for High Energy Accelerator Applications S. Uznanski, R. Garcia Alia, M. Brugger, C. Cangialosi, S. Danzeca, B. Todd, CERN
Top-down system-level radiation qualification of a complex electronic system prior to component radiation characterization is presented. The approach allows avoiding a system over-design by focusing on failures leading to system unavailability.
J-4 2:30 PM
Exploiting Parallelism and Heterogeneity in a FinFET Radiation Effects TCV Optimized for Efficient Heavy-Ion Testing J. S. Kauppila, J. A. Maharrey, R. C. Quinn, T. D. Haeffner, P. Nsengiyumva, D. R. Ball, A. L. Sternberg, E. X. Zhang, B. L. Bhuva, L. W. Massengill, Vanderbilt University
Novel design techniques for efficient testability were developed and implemented in a FinFET TCV. A 72-hour heavy ion test produced data sets with extensive technology characterization while achieving a 13X efficiency in beam time.
2:45 - 5:10 PM Mardi Gras E-H Ballrooms
POSTER SESSION Chair: Marta Bagatin, DEI - University of Padova
Correlation of a BJT-based neutron displacement damage sensor methodology and NIEL with proton irradiations A. M. Tonigan, Sandia National Laboratories and Vanderbilt University; C. N. Arutt, R. D. Schrimpf, Vanderbilt University; E. J. Parma, P. J. Griffin, Sandia National Laboratories
Three bipolar transistors of varying sensitivity are evaluated as displacement damage sensors with proton, neutron and ionizing dose irradiations. The response is correlated to calculated non-ionizing energy loss (NIEL).
Using Two-Photon Absorption to Measure the Single-Event-Latchup Sensitive-Volume P. Wang, A. L. Sternberg, J. A. Kozub, E. X. Zhang, D. M. Fleetwood, R. A. Reed, R. D. Schrimpf, Vanderbilt University; N. A. Dodds, Sandia National Laboratories; S. L. Jordan, Jazz Semiconductor Trusted Foundry
Single-event latchup sensitive volume is measured using a two-photon absorption technique that is based on the intrinsic variability of the laser pulse energy.
On-Orbit Flight Observation of Proton Induced SEB in a Power MOSFET L. Z. Scheick, R. Davies, R. Menke, R. Schaefer, G. R. Allen, L. D. Edmonds, JPL
A power system was seen to fail as it passed thru a proton rich environment. A proton induced Single-Event Burnout in power MOSFET was identified as the most probable failure cause.