Session J

Session J - Single-Event Effects: Mechanisms and Modeling

Wednesday, July 18, 2018

1:30 - 4:30 PM
King's 1-3 Ballrooms

POSTER SESSION
Chair: Nathan Nowlin, Sandia National Laboratories

PJ-1

Impact of the Elemental Makeup of an IC in Generating Single-Event Upsets from Low Energy (<10 MeV) Neutrons: a 3D NAND Flash Case Study
P. M. Conway, M. J. Gadlage, D. I. Bruce, J. D. Ingalls, A. M. Williams, D. P. Bossev, NSWC Crane

The role various elements found in an integrated circuit have in producing single-event upsets from low-energy neutrons is discussed. Neutron data on a modern 3D NAND flash is used as a case study.

PJ-2

Multi-Scale Simulation of Single Particle Displacement Damage in Silicon Device
C. He, D. Tang, Z. Zang, Y. Li, Xian Jiaotong University

A theoretical method combining with molecular dynamics simulation and kinetic Monte Carlo simulation is proposed to investigate the formation and evolution of single particle displacement damage in silicon device.

PJ-3

Heavy Ion Transport in SiC-Based Power Devices
J. A. McPherson, P. J. Kowal, G. K. Pandey, T.-S. P. Chow, W. Ji, Rensselaer Polytechnic Institute; A. A. Woodworth, NASA GRC

Study of heavy ion transport in SiC-based power devices. Energy deposition and charge generation are analyzed. Radiation data with improved fidelity is utilized in a unified physics model between radiation transport and device response.

PJ-4

Heavy Ion Induced Single Event Burn-Out (SEB) in SiC Schottky Diodes
G. K. Pandey, J. A. McPherson, P. J. Kowal, W. Ji, T.-S. P. Chow, Rensselaer Polytechnic Institute; A. A. Woodworth, NASA GRC

We perform 3D TCAD modeling for Single Event Burnout due to heavy ion strike on 1200V 4H-SiC SBD and JBS diode. We propose addition of a field reduction layer and evaluate the improved robustness.

Friday, July 20, 2018

SESSION J
11:10 AM
Monarchy Ballroom

SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING
SESSION INTRODUCTION
Chair: Frederick Wrobel, Universite Montpellier

J-1
11:15 AM

Mechanisms of Electron-Induced Single Event Latchup
M. Tali, University of Jyvaskyla, CERN, and ESA/ESTECR. Garcia Alia, M. Brugger, R. Corsini, W. Farabolini, CERN; V. Ferlet-Cavrois, G. Santin, C. Boatella Polo, ESA/ESTEC; A. Javanainen, A. Virtanen, University of Jvvaskyla

We discuss possible mechanisms by which electrons can induce Single Event Latchups in electronics and effect of presence of high-Z materials on this phenomenon. First experimental results are shown and future work is discussed.

J-2
11:30 AM

Understanding the Average Electron-Hole Pair Creation Energy in Silicon and Germanium from Full-Band Monte Carlo Simulations
J. Fang, R. D. Schrimpf, R. A. Reed, R. A. Weller, S. T. Pantelides, Vanderbilt University; S. L. Weeden-Wright, Lipscomb University; M. V. Fischetti, The University of Texas at Dallas

The average electron-hole pair creation energies in silicon and germanium are examined by simulating carrier thermalization with full-band Monte Carlo techniques. Physical processes leading to these energies are identified.

J-3
11:45 AM

A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies
J. S. Kauppila, D. R. Ball, J. A. Maharrey, R. C. Harrington, T. D. Haeffner, A. L. Sternberg, M. L. Alles, L. W. Massengill, Vanderbilt University

A single-event-enabled compact model for bulk FinFET technologies has been developed, incorporating bias dependence and geometry awareness. The compact model has been validated with heavy ion data over angle of incidence and bias.

J-4
12:00 PM

SEFI Modeling in Readout Integrated Circuit Induced by Heavy Ions at Cryogenic Temperatures
L. Artola, G. Hubert, ONERA; S. Ducret, F. Advent, Sofradir; J. Mekki, CNES

This work presents a modeling approach of SEFI from the radiation particle down to the event in a ROIC. Simulation and experimental results of cross sections for heavy ions are presented and discussed.

J-5
12:15 PM

Ultra-Energetic Heavy Ion Beams in the CERN Accelerator Complex for Radiation Effects Testing
R. Garcia Alia, P. Fernández Martínez, M. Kastriotou, M. Brugger, M. Cecchetto, F. Cerutti, N. Charitonidis, S. Danzeca, L. Gatignon, A. Gerbershagen, S. Gilardoni, J. Bernhard, N. Kerboube, M. Tali, V. Wyrwoll, CERN; V. Ferlet-Cavrois, C. Boatella, H. Evans, G. Furano, ESA; R. Gaillard, Consultant

UltraEnergetic heavy ion beams at CERN are evaluated through simulations and experimental data as a means of qualifying components against SEE, focusing on the impact of the energy on the ionization profile and nuclear reactions.