Session J

Session J - HARDNESS ASSURANCE

Thursday, July 11, 2019

1:45 - 4:30 PM
Salons A,B.F

POSTER SESSION
Chair: Ethan Cannon, Boeing

PJ-1

Silicon Carbide Power MOSFETs Under Neutron Irradiation: Failure In Time Demonstration and Long Term Reliability Degradation Evaluation
K. Niskanen1, A. Touboul2, R. Germanicus2, A. Michez1, F. Wrobel1, J. Boch1, V. Pouget1, P. Girones3, S. Morand4, O. Crepel4, C. Weulersse4, C. Binois4, F. Saigne1
1. University of Montpellier, France
2. ENSICAEN-CRISMAT Laboratory, France
3. CEA, France
4. Airbus, France

Silicon carbide power MOSFET sensitivity to single event effects under neutron irradiation was studied. Time dependent dielectric breakdown of the gate oxide was also investigated. Lower charge to breakdown values were observed for irradiated devices.

PJ-2

Application of Bayesian Methodology to Radiation Hardness Assurance and Spacecraft Reliability
A. Coburger, J. Likar, C. Smith
JHU APL, USA

Bayesian methods offer opportunities to reduce conservatism and uncertainties in RHA and reliability calculations. Methods are demonstrated using RLAT data and a LEO reference mission.

PJ-3

Design-of-Experiments and Monte-Carlo Methods in Upset Rate-Calculations
D. Hansen
Data Devices Corp., USA

This paper reports on the calculation of upset rates in geosynchronous orbit using design of experiments and Monte-Carlo approaches to the parameters available in CREME96. The implications for data collection are discussed.

PJ-4L

Direct Ionization Impact on Accelerator Mixed-Field Soft Error Rate
R. Garcia Alia1, M. Tali2, M. Brugger1, M. Cecchetto1, F. Cerutti1, S. Danzeca1, P. Fernandez Martinez1, S. Gilardoni1, A. Infantino1, M. Kastriotou1, N. Kerboub1, G. Lerner1, V. Wyrwoll1, V. Ferlet Cavrois3, C. Boatella-Polo3, A. Javanainen4, H. Kettunen4, R. Gaillard5, F. Wrobel6
1. CERN, Switzerland
2. CERN/ESA/University of Jyvaskyla, Switzerland
3. ESA, Netherlands
4. University of Jyväskylä, Finland
5. Consultant, France
6. University of Montpellier 2, France

The impact of charged particle direct ionization on the mixed-field accelerator soft-error rate is evaluated through experimental measurements and Monte Carlo simulations, showing that present technologies are at the limit of direct ionization dominance.

PJ-5L

Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs
R. Austin1, B. Sierawski1, R. Reed1, R. Schrimpf1, K. Galloway1, D. Ball1, A. Witulski1
1. Vanderbilt University, USA

Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length

Friday, July 12, 2019

SESSION J
11:05 AM
Salons C,D,E

HARDNESS ASSURANCE
SESSION INTRODUCTION
Chair: Thomas Turflinger (Aerospace Corporation)

J-1
11:10 AM

Risk Methodology for SEE Caused by Proton-Induced Fission of High-Z Materials in Microelectronics Packaging
R. Ladbury
NASA GSFC, USA

Proton-induced fission of high-Z materials can produce high fluxes of high-LET ions in microelectronics. We develop methods to evaluate risks for a range of destructive and nondestructive SEE modes caused by this threat.

J-2
11:25 AM

Data Retention Voltage Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergetic Effects of TID
D. Kobayashi1, K. Hirose1, K. Sakamoto2, S. Okamoto2, S. Baba2, H. Shindou2, O. Kawasaki2, T. Makino3, T. Ohshima3, Y. Mori4, D. Matsuura4, M. Kusano4, T. Narita4, S. Ishii4
1. ISAS/JAXA and Univ. of Tokyo, Japan
2. R&D/JAXA, Japan
3. QST, Japan
4. MHI Ltd., Japan

SEU cross-section is known to acquire post-silicon variation by TID. This issue is studied through a voltage parameter easily available in SRAMs. Results show its potential to predict and cancel out the variations in flight.

J-3
11:40 AM

Single Event Latchup Sensitive Volume Model for a 180-nm SRAM Test Structure
P. Wang1, A. Sternberg1, B. Sierawski1, E. Zhang1, N. Dodds2, G. Vizkelethy2, S. Jordan3, D. Fleetwood1, R. Reed1, R. Schrimpf1
1. Vanderbilt University, USA
2. Sandia National Laboratories, USA
3. Jazz Semiconductor Trusted Foundry, USA

New ion-induced latchup data and previous laser-induced latchup data facilitates the definition of a multiple, nested sensitive-volume model using the Monte Carlo Radiative Energy Deposition tool. Hardness assurance implications are discussed.

J-4
11:55 AM

Energy-Dependent Effective Cross Sections of Neutron Interactions with Semiconductor Devices
S. Wender1, J. O’Donnell1, L. Zavorka1, B. Bhuva2
1. Los Alamos National Laboratory, USA
2. Vanderbilt University, USA

We have developed a technique to measure the neutron beam attenuation through a stack of PCBs. This will allow test engineers to correct inaccuracies in the failure-in-time (FIT) rate measurements during SEU tests.

J-5
12:10 PM

Evaluating Elevated Temperature DRAM Stuck Bit Sensitivity at Room Temperature
S. Guertin1, W. Parker1, D. Nguyen1, S. Delaney2, P. Blaisdell-Pijuan3, J. Vanacore4, G. Allen1, D. Sheldon1
1. Jet Propulsion Laboratory, USA
2. San Diego State University, USA
3. Princeton University, USA
4. California Polytechnic State University, USA

High temperature measurements anneal stuck bits in test devices, invalidating results. Impact is exacerbated in low- to moderate-temperature, high-dose missions. A low-temperature method is presented for mission estimates.