A one-day short course, “Predicting, Characterizing, and Mitigating SEE in Advanced Semiconductor Technologies,” will be presented at the 2019 IEEE Nuclear and Space Radiation Effects Conference (NSREC). The course will discuss single event effects (SEE) that occur in components used in space systems. The past four decades have seen our understanding of the range of SEE experienced by space systems expand substantially as more modern devices have been exposed to the space radiation environment. Vulnerabilities of devices today are much more complicated than in the past, and those vulnerabilities continue to threaten space systems as parts are scaled, new materials are used, devices become faster, and new mechanisms are discovered.
This short course is organized into four sections. It includes an up-to-date overview of SEE mechanisms and rates; discussions of various methods to test for SEE and isolate sensitive nodes; and a discussion of SEE in advanced components, and the challenges posed by some of these components for our test methodologies. All of the testing presentations will show case studies, indicate how the techniques are used to isolate susceptible nodes, discuss correlations between particle tests and photon tests, and indicate how the test methodologies point to strategies for mitigation.
This short course is intended for radiation effects engineers and scientists, component specialists, systems designers, and other technical and management personnel who are involved in developing reliable systems to operate in environments susceptible to SEE. It provides a unique opportunity for IEEE NSREC attendees to benefit from the expertise of the instructors, along with a critical review of state-of-the-art knowledge in the field. Electronic copies of detailed course notes will be provided at registration.
Continuing Education Units (CEUs)
For those interested in Continuing Education Units (CEUs), there will be an open book exam at the end of the course. The course is valued at 0.6 CEUs and is endorsed by the IEEE and by the International Association for Continuing Education and Training (IACET).
Short Course Chairman
Dr. Steven C. Moss The Aerospace Corporation (Rtd) Electronics & Photonics Laboratory Short Course Chair
Steven C. Moss is retired from the Electronics & Photonics Laboratory at The Aerospace Corporation in Los Angeles, CA. He received a BS Degree (physics, mathematics) from Arkansas A&M College (1970), an MS Degree (physics) from Purdue University (1972), and a PhD Degree (physics) from North Texas State University (1981). He was a National Research Council Postdoctoral Research Associate at the US Naval Research Laboratory (1981-1982). His research interests include the use of ultrashort optical pulses to simulate the transient effects of ionizing radiation on microelectronic devices, transient photoluminescence from materials and advanced devices, permanent damage produced by radiation effects in microelectronic/optoelectronic devices, and reliability and physics of failure of advanced microelectronic/optoelectronic devices. Dr. Moss is a member of the American Chemical Society, the American Association for the Advancement of Science, the American Association of Physics Teachers, the Materials Research Society, and the SPIE – the International Society for Optics and Photonics. Dr. Moss is a life member of the American Physical Society and the Optical Society of America, and is a Life Senior Member of the IEEE. He is an Associate Editor for the IEEE Transactions on Nuclear Science and serves on the Editorial Board for the MRS Bulletin. He is one of the organizers of the annual Single Event Effects Symposium.
Daisuke Kobayashi received the Ph.D. degree from the University of Tokyo, Tokyo, Japan in 2005. He then joined Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Kanagawa, Japan, where he is now Assistant Professor of Spacecraft Engineering. His work is primarily on reliability of semiconductor devices exposed to radiation. He received several awards including 2011 Space Science Award for Young Scientists from the Society for Promotion of Space Science. Dr. Kobayashi held various positions for the previous NSREC including a session chair in 2014. He was as an Associate Editor of IEEE Transactions on Nuclear Science from 2015 to 2017.
BASICS OF SINGLE EVENT EFFECTS MECHANISMS AND PREDICTIONS Dr. Daisuke Kobayashi ISAS/JAXA
Dr. Daisuke Kobayashi, ISAS/JAXA, will provide basic knowledge of SEE mechanisms and rates that will underlie this year’s short course. More than three decades have passed since the term "single-event" appeared for the first time in the titles of NSREC short course presentations. In 1983, two lecturers used "single-event upsets". Since then this research topic has evolved to be very wide and complex, so that we are now collectively calling the field of investigation "single-event effects." This presentation will be useful, in particular for those who are new to this field, to see how SEE have evolved along with the diversity of processes and circuitry in semiconductor parts and their environments. Parts are now fabricated with various materials, such as tungsten and copper and soon cobalt, with complex circuits like radiation-hardened latches. They must withstand the bombardment of heavy ions, protons, electrons, neutrons, muons, photons, etc. The complexity of the mechanisms and predictions is expanding. This talk will provide a foundation for understanding SEE and a background for the remaining presentations in the short course.
A top-level outline of the presentation is as follows:
Introduction
An Evolutionary Tree-An Analysis of Course Notes
Origin of SEE
First Observations
Basics of Mechanisms and Predictions
Charge Deposition and Collection Mechanisms
Event Rate Predictions
Evolution of SEE
Evolution Mechanisms-What Causes the Diversity
Non-Destructive SEE
SEU-From Single Upsets to Hundreds and More
SET-From ns to ps, but still 100 ps?
Destructive SEE
SEL-From Significant to Less?
SEB/SEGR-From V/cm to K
Future Perspective
Summary
Arto Javanainen is a Senior Researcher in Physics Department at University of Jyväskylä (JYU), Finland, and also an Adjoint Assistant Professor in Electrical Engineering at Vanderbilt University, TN, USA. He received his PhD in applied nuclear physics with honors from JYU in August 2012. His work in the field of radiation effects was recognized by IEEE’s Nuclear and Plasma Physics Society with the Paul Phelps Continuing Education Grant in July 2013. Recent years his work has been primarily focused on SEEs in power electronics, both silicon and silicon carbide based. Additionally, Dr. Javanainen has been involved in various radiation-effects test campaigns, primarily at JYU’s RADEF facility. Dr. Javanainen is a member in IEEE, and he has acted as reviewer and session chair in RADECS and NSREC conferences for several years. He has also reviewed papers for journals like IEEE TNS, and Nuclear Instruments and Methods B. He is the deputy coordinator in EU Horizon2020 MSCA Innovative Training Network, RADSAGA.
SEE TESTING WITH BROAD AND FOCUSED PARTICLE BEAMS Dr. Arto Javanainen Department of Physics, University of Jyväskylä, Finland Department of EECS, Vanderbilt University, Nashville, TN, USA
Arto Javanainen, University of Jyväskylä, Department of Physics, will discuss issues related with Single Event Effects testing using accelerated particle beams, both broad and focused. Basic physics mechanisms governing the energy deposition and its relation with particle energy will be reviewed. Basic things to be considered when testing with accelerators are addressed. Some of the common pitholes to avoid when performing SEE tests at particle accelerators will be identified.
Modern technologies with deep submicron feature sizes and low critical charge may exhibit sensitivity to proton direct ionization that can lead to concerns about their susceptibility to muons, hence increased soft error rates in ground level applications. Also SEEs induced by high energy electrons may be a concern for some applications, like those planned for Jupiter missions. What requirements do these issues set for the facilities and the SEE tests in general?
The presentation will introduce different types of facilities available for SEE testing. A non-exhaustive listing of both the conventional broad and also the focused (milli- and micro-) beam facilities, and their general characteristics will be given.
A top-level outline of the presentation is as follows:
Introduction
Particle-matter interactions
LET
Projected range
Nuclear reactions
Energy deposition in small volumes
SEE Testing at facilities
Conclusions
Dale McMorrow received the Ph.D. degree in Physical Chemistry from The Florida State University, Tallahassee, FL in 1984, under the direction of Prof. Michael Kasha. After a postdoctoral fellowship at the University of Toronto he joined the technical staff at the Naval Research Laboratory in 1988, where he is currently the Head of the Radiation Effects Section. His recent research interests include the development and application of laser-based methodologies for simulating single-event phenomena in microelectronic devices and circuits, and the use of ultrafast nonlinear-optical spectroscopic techniques to probe the details of intermolecular dynamics of liquids and solutions. He has served as Technical Chair for the Single-Event Effects Symposium, session chair at the IEEE Nuclear and Space Radiation Effects Conference, the Radiation and its Effects on Components and Systems Conference, and the Single-Event Effects Symposium. He is a Fellow of the IEEE and a Senior Member of the Optical Society of America. He has authored or co-authored over 250 papers in refereed journals.
LASER-BASED TESTING FOR SEE Dr. Dale McMorrow U. S. Naval Research Laboratory
Dr. Dale McMorrow, U.S. Naval Research Laboratory, will discuss application of pulsed-laser approaches to SEE testing and evaluation. Charge carrier generation induced by pulsed-laser excitation has become an essential tool for the investigation of SEE in micro- and nano-electronic structures. A primary advantage of laser-based approaches lies in their spatial selectivity: the ability to pinpoint and characterize sensitive nodes of circuits without the damage associated with particle-based radiation sources. This talk will address the fundamental physics associated with both linear- and nonlinear-optical approaches for charge generation in semiconductor materials, followed by examples that illustrate various aspects of the approach, including sensitive node identification, radiation hardened circuit verification (RHBD and RHBP), basic mechanisms investigations, model validation and calibration, screening devices for space missions, and fault injection to understand error propagation in complex circuits. Finally, recent advances in putting laser SEE approaches on a more quantitative basis will be discussed, including progress toward correlating pulsed-laser and heavy-ion measurements.
A top-level outline of the presentation is as follows:
Laser-induced single-event effects
Charge generation by optical absorption
Charge density profiles for SPA and TPA
Top side vs. back side excitation
Spatial selectivity
History and background
Single Photon Absorption (SPA)/Beer’s Law
Two Photon Absorption (TPA)/Nonlinear pulse propagation and carrier generation
Experimental approach
Basic experimental setup
Calibration and dosimetry
Selected examples and case studies
Recent developments and future considerations
Stephen LaLumondiere is a Member of the Technical Staff in the Photonics Technology Department at The Aerospace Corporation. Stephen joined The Aerospace Corporation in 1988, and was a key contributor to the development of Aerospace’s pulsed laser test SEE facility, a potential laser-based pulsed x-ray source for laboratory SEE testing and development of the pulsed x-ray SEE test technique. His other interests include development of compact laser communications systems for cubesats and time resolved spectroscopy as a diagnostic for electronic and photonic devices.
THE CURRENT STATUS AND POTENTIAL OF PULSED X-RAYS AS A HIGH-RESOLUTION PROBE FOR SINGLE EVENT EFFECTS TESTING Mr. Stephen LaLumondiere The Aerospace Corporation
Mr. Stephen LaLumondiere, The Aerospace Corporation, will describe the application of pulsed x-rays for SEE and TID testing of microelectronic devices. Pulsed x-rays from synchrotron-based light sources have recently been demonstrated as a highly effective tool for SEE testing with potentially unprecedented spatial resolution. This part of the short course will describe the background and rationale for synchrotron based x-ray SEE testing. Other potential sources, and their benefits and limitations will be described. A detailed description of the technique, its challenges and limitations will also be presented. Several case studies of pulsed x-ray SEE testing will be detailed, including SETs in linear bipolar devices, wide bandgap materials and the status of work to correlate x-rays with energetic particle LETs. The impact of the Advanced Photon Source (APS) upgrade on future SEE testing activities will also be discussed.
A top-level outline of the presentation is as follows:
Introduction
Relevant x-ray Sources
Tabletop Lasers
X-ray FELs
Synchrotrons
Synchrotron x-ray testing at the Advanced Photon Source
X-ray interactions with materials
X-ray focusing techniques
Typical beamline setup for SEE testing
X-ray Flux calibration
Case studies
SETs in wide bandgap materials
SETs in linear bipolar integrated circuits
Work on correlation with energetic particles
Other related research
Proposal system for accessing synchrotron facilities
Impact of the APS upgrade on SEE testing activities
Manuel Cabanas-Holmen is a principal investigator and project lead at the Solid State Electronics Development group at the Boeing Research & Technology organization. He has 20 years of experience in radiation hardening by design (RHBD), and radiation effects analysis and test. His unique expertise ranges from the design of innovative nanoscale radiation hardened circuits to the development of advanced methods for predicting the single event error rate of complex microprocessors, up to systemlevel radiation effects analysis of commercial, civil and defense space vehicles and payloads. He has spearheaded the development of novel radiation hardening methodologies for Near-Threshold Computing (NTC) applications in state-of-the-art FinFET technologies. He received the B.S. degree in applied physics, computer engineering and electrical engineering from Pacific Lutheran University, and the M.S. degree in electrical engineering from National Technological University.
SEE TEST AND ANALYSIS OF COMPLEX DEVICES IN ADVANCED TECHNOLOGIES: FROM CELLS TO SYSTEMS Mr. Manuel Cabanas-Holmen Boeing Research & Technology
Mr. Manuel Cabanas-Holmen, Boeing Research & Technology, will discuss the challenges of SEE testing modern complex devices in advanced semiconductor processing nodes. In modern technologies, standard and Radiation Hardened by Design (RHBD) logic gates, storage elements and macros exhibit strong angular sensitivity that should guide how we test complex devices to avoid naively optimistic results. Fault tolerant microprocessors often have multiple circuit cells and macros with starkly different angular sensitivity, and it is often necessary to perform extensive SEE test campaigns to acquire the data necessary to estimate their error rate. At- speed SEE testing of high performance mixed signal macros, such as Analog-to- Digital Converters (ADC) with high speed interfaces, requires complex instrumentation with continuous data capture and concurrent error detection algorithms. Frequently, it is preferable to synchronize the ADC data capture with the radiation source for a one-to-one correlation of a laser pulse or ion spill with the resulting effect. Advanced packaging solutions using 2.5D and 3D heterogeneous integration increase the complexity of SEE testing many fold by combining multiple complex devices in a single package, without access to the interfaces within the module. The presentation will conclude with a discussion of the challenges to be faced by those testing advanced technologies for susceptibility to SEE.
A top-level outline of the presentation is as follows:
Introduction
Charge Sharing Effects in Complex Devices
Charge sharing effects of modern bulk technologies
Impacts on radiation hardened cell design
Single Event Multiple Transients (SEMT)
Impact of Angular Sensitivity on Complex Devices
Angular sensitivity of modern technologies
Estimating error rates of complex devices with multiple circuit cells and macros with different angular sensitivity
At-Speed SEE Testing of High Performance Mixed Signal Macros
SEE testing of mixed signal macros with high speed interfaces
Complex instrumentation with continuous data capture and concurrent error detection
Single Photon Absorption (SPA)/Two Photon Absorption (TPA) Laser and Milli-Beam Testing of Complex Devices
