A one-day short course, “Predicting, Characterizing, and Mitigating SEE in Advanced Semiconductor Technologies,” will be presented at the 2019 IEEE Nuclear and Space Radiation Effects Conference (NSREC). The course will discuss single event effects (SEE) that occur in components used in space systems. The past four decades have seen our understanding of the range of SEE experienced by space systems expand substantially as more modern devices have been utilized in space systems and exposed to the space radiation environment. Vulnerabilities of devices today are much more complicated than in the past, and those vulnerabilities continue to threaten space systems as parts are scaled, new materials are used, devices become faster, and new mechanisms are discovered.
This short course is organized into four sections as shown below. The short course includes an up-to-date overview of SEE mechanisms and rates; discussions of various methods to test for SEE and isolate sensitive nodes; and a discussion of SEE in advanced components, and the challenges posed by some of these components for our test methodologies. All of the testing presentations will show case studies, indicate how the techniques are used to isolate susceptible nodes, discuss correlations between particle tests and photon tests, and indicate how the test methodologies point to strategies for mitigation.
This short course is intended for radiation effects engineers and scientists, component specialists, systems designers, and other technical and management personnel who are involved in developing reliable systems to operate in environments susceptible to SEE. It provides a unique opportunity for IEEE NSREC attendees to benefit from the expertise of the instructors, along with a critical review of state-of-the-art knowledge in the field. Electronic copies of detailed course notes will be provided at registration.
Continuing Education Units (CEUs)
For those interested in Continuing Education Units (CEUs), there will be an open book exam at the end of the course. The course is valued at 0.6 CEUs and is endorsed by the IEEE and by the International Association for Continuing Education and Training (IACET).
Short Course Chairman
Steven C. Moss The Aerospace Corp. (retired) Short Course Chairman
Simone Gerardin is an Associate Professor of Electronics at the University of Padova – Italy. He received the Laurea degree (cum laude) in Electronics Engineering in 2003, and a Ph.D. in Electronics and Telecommunications Engineering in 2007, both from the University of Padova. His research has been focused on ionizing radiation effects in advanced CMOS technologies and on their interplay with device aging and electrostatic discharges, in the space, terrestrial, and high-energy physics environments. Lately, his interests have been on innovative non-volatile memories for space and total ionizing dose effects at ultra-high levels. Simone has authored or co-authored more than 200 peer-reviewed journal articles, book chapters, and conference presentations, ten of which were recognized with international awards. He presented four tutorials at international conferences and co-edited a book. He has been an associate editor for the IEEE Transactions on Nuclear Science and member-at-large of the IEEE Radiation Effects Steering Group. He is currently a member of the RADECS Steering Group.
Mike Xapsos joined the Radiation Effects and Analysis group at NASA Goddard Space Flight Center in 2001, where he oversees the group’s space radiation environment work and supports space flight and research programs. Prior to that he worked in the Radiation Effects Branch of the Naval Research Laboratory as a research physicist, where his work involved device problems and the space radiation environment. He received the B.S. degree in physics and chemistry from Canisius College in 1978 and the Ph.D. degree in physics from the University of Notre Dame in 1985.
Mike led the development of the ESP/PSYCHIC solar particle event models that are widely used for spacecraft design requirements. He has presented prior Short Courses for the NSREC, Radiation Effects on Components and Systems (RADECS) Conference, and Hardened Electronics and Radiation Technology (HEART) Conference, and was lead author of an NSREC Outstanding Paper Award and a RADECS Outstanding Conference Oral Paper. He has been an editor of the IEEE Transactions on Nuclear Science NSREC issue and held various positions for the NSREC including conference chair in 2015. He has authored or co-authored approximately 100 technical publications.
A Brief History of Space Climatology: From the Big Bang to the Present Dr. Mike Xapsos NASA Goddard Space Flight Center
Dr. Mike Xapsos, NASA Goddard Space Flight Center, will discuss space climatology – the radiation environment observed over an extended period of time at a given location, corresponding to a space mission duration and orbit. It will begin with a unique introduction to the early universe and the origin of particles relevant for radiation effects – electrons, protons, neutrons, and heavy ions. A transitional period leading to modern times will be discussed involving the discovery of sunspots, the solar cycle and the sun’s pervasive influence on space climatology. This leads to the main discussion about modern space climatology, with emphasis on galactic cosmic rays, solar particle events, and trapped particles. Metrics that describe the effects these radiations have on electronic devices and circuits will be introduced. Radiation properties such as elemental composition, fluxes, energies, and dependence on solar cycle phase and spacecraft orbit will be discussed, with emphasis on variability of these properties. Finally, current radiation models used for space system design along with example applications will be presented.
This will complete the attendee’s journey along the space climatology time line ranging from the Big Bang to NSREC 2018!
A top-level outline of the presentation is as follows:
The early universe from a radiation effects perspective
Origin of electrons, protons, neutrons and heavy ions
Transition to modern times
Sunspots and the solar activity cycle
Modern times – the space radiation environment
Definition of space climatology and space weather
Galactic cosmic rays
Properties
Models
Current issue: elevated fluxes during prolonged solar minima
Solar particle events
Properties
Models
Current issue: use of statistical models vs. worst case observations
The Van Allen Belts
Properties
Models
Current issue: the case of the missing electrons
Example environments for total dose and single events
Summary
Renaud Mangeret received his PhD in electronics from the Paul Sabatier University, Toulouse (France) in the Materials and Components for Electronics Department in 1992. He then worked at the IBM Almaden Research Center, California, as a visiting scientist working on nonlinear optics (NLO) polymers. From 1993-1995 Renaud worked at Giat Industries, Toulouse as a research and development engineer. Since 1995 Renaud has been the radiation specialist at Matra Marconi Space/EADS Astrium/Airbus Defence and Space, Toulouse, then in 2006 has been Astrium/Airbus Defence and Space’s Radiation Expert and is now Transnational Radiation Senior Expert, still at Airbus Defence and Space in Toulouse. He is responsible for all aspects of radiation hardness assurance solutions for use of sensitive devices in space programs (telecommunications, Earth observation, interplanetary scientific and constellations). Renaud is a Member of the IEEE and currently serves as Treasurer for the RADECS Association Steering Committee.
Radiation Hardness Assurance: How Well Assured Do We Need to Be? Dr. Renaud Mangeret Airbus Defence and Space
Dr. Renaud Mangeret, Airbus Defence and Space, will discuss the intrinsic variability of numerous parameters within the Radiation Hardness Assurance (RHA) process. From the perspective of a space system provider, the need of supplying radiation robust products to multiple customers requires a cost/schedule effective approach of the RHA process. This results in a permanent trade-off between generic versus application specific approaches in several domains. After a short recap of the radiation environment (which is also quite variable), the presentation will address the variability issues in the radiation modelling and calculation process, in the area of radiation testing, in the electronic design domain and, finally, in the EEE parts themselves. This will cover a broad range of technical items which are to be put in perspective with the definition of a radiation design margin.
A top-level outline of the presentation is as follows:
Introduction
Radiation environment definition and potential impacts on RHA process
Some parameters of influence on the RHA process
Customer
Normative system
Program nature
Key parameters in the RHA process
TID/DD hardness assurance
Modelling activities
Device traceability
Test activities
Link with Worst Case Analysis
Margin policy
SEE hardness assurance
Device traceability
Test activities
Link with design tolerance (equipment, system)
SEE Rate calculation
Conclusion
Marc Gaillardin is an engineer at the Commissariat à l’Energie Atomique (CEA), in Arpajon, France. His primary research activities are focused on the radiation effects in innovative technologies including Ultrathin SOI, FinFET and nanowire devices. He is involved in developing radiation-hardened technologies using modelling and experimental characterization assessment methodologies. He earned his M.S. in electronic engineering from University of Orsay (Paris-Saclay Univ.) and Polytech’ Paris Sud (formerly FIUPSO), Orsay, France, and his PhD. in nanoelectronics from the Institut National Polytechnique de Grenoble, France.
Process Variations and Radiation Effects in Advanced Technologies Dr. Marc Gaillardin CEA
Dr. Marc Gaillardin, CEA, will present radiation effects in advanced transistors with an emphasis on variability. This part of the short course will focus primarily on microelectronics technologies, transistor architectures, and their evolutions. Both Ultra-Thin SOI and FinFET architectures will be discussed, since they represent the best solutions to meet the requirements for nanometer scaled technology nodes. Then, process variability issues will be introduced to discuss their implications on devices and integrated circuits. The second half will review radiation effects in advanced devices. Total Ionizing Dose effects will be thoroughly investigated through the impact of geometry and device structure to discuss potential variability implications. A discussion about displacement damage dose effects in nano-scaled devices will be included as well. The end of the course will be dedicated to providing perspectives about the use of novel technologies in harsh environments.
A top-level outline of the presentation is as follows:
Introduction
Microelectronic Technology: from micro to nanometer scaled transistors
Transistors architectures
MOSFET devices: evolutions and major breakthroughs
Variability issues
Summary of major keypoints on microelectronic technologies
Radiation Effects in Ultra-Scaled MOSFETS
Basic mechanisms
Impact on MOSFET function
Nano-scaled MOSFETs TID response: Geometry and device structure dependence
Insights into process variability implications on TID response
Perspectives of Radiation Effects in Ultra-Scaled Devices
Conclusions
Brian Sierawski is a Research Assistant Professor in Electrical Engineering with Vanderbilt’s Institute for Space and Defense Electronics (ISDE). He received his B.S.E in Computer Engineering and M.S.E. in Computer Science and Engineering from the University of Michigan in 2002 and 2004, and his Ph.D. in Electrical Engineering from Vanderbilt University in 2011. He joined ISDE in 2005 where his research interests include the simulation of single event effects and error rate predictions in microelectronics. He developed the CRÈME website, investigated the contribution of low-energy proton and muon single event upsets in memories, and developed Vanderbilt’s CubeSat program currently collecting telemetry from two radiation effects payloads. He is an IEEE senior member and served as the Finance Chair for the IEEE Nuclear and Space Radiation Effects Conference (NSREC) in 2016.
Addressing Device and Environment Variations in Single Event Rate Predictions Dr. Brian Sierawski Vanderbilt University, Institute for Space and Defense Electronics
Dr. Brian Sierawski, Vanderbilt University, Institute for Space and Defense Electronics, will review how proton and ion-induced single events are modeled, measured, and extrapolated into an on-orbit response. Limited resources for test and analysis favor minimal characterization and efficient models to estimate the rate of events in space. However, some event rates will not be well-predicted by the measured average device response and will require a greater level of attention. The second part of the course will discuss how variations in devices, events, and environments factor into single event error rates and the extent to which they should be accounted for in ground tests and on-orbit predictions. Notably, highly-scaled memories exhibit enhanced sensitivity to proton and electron upsets and radiation hard circuits can exhibit an ion species dependency. Understanding the limitations of data and models will direct test activities to account for the dominant mechanism for errors. Finally, the course will explore how tools have adapted to improve single event rate predictions.
A top-level outline of the presentation is as follows:
Introduction
Basics of single events
Ground based tests and rate prediction methods
Factoring device and environment variations into rate predictions
