2018 NSREC Short Course
On behalf of the 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC) Committee, I cordially invite you to attend the 39th IEEE NSREC Short Course. An outstanding group of technical experts will provide an in-depth discussion of the radiation space environment and its effects on electronic components, emphasizing the issues related to variability.
Prof. Simone Gerardin
University of Padova
Department of Information Engineering
Short Course Chairman
EACH ATTENDEE WILL RECEIVE A CD-ROM ARCHIVE OF IEEE NSREC SHORT COURSE NOTEBOOKS (1980-2018).
A one-day short course, “Variability in Environments, Devices, and Radiation Effects – from Average to Extreme”, will be presented at the 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC). The course will discuss space weather and the effects of ionizing radiation in advanced electronic devices, with emphasis on variability and its main sources. Bounding and managing uncertainties is a key to mission success for space systems in harsh environments. The introduction of more scaled technologies, the growing interest towards using Commercial-Off-The-Shelf Components (COTS), and the push to reduce design margins and test time to decrease costs is making variability more challenging than ever. Accurate environmental modeling is therefore needed for a precise assessment of the radiation exposure during a mission. Average metrics may not fully capture the extent of radiation effects in modern devices and need to be replaced. Nanoscale components and sensitive volumes mandate the use of statistical or Monte Carlo techniques for evaluating and predicting failures in space.
This short course will benefit those new to the field by explaining in a clear and concise manner the basic concepts concerning the presence of ionizing radiation in space and its effects on electronic systems, while providing up-to-date material and insight into new phenomena and mechanisms for experienced engineers and scientists.
It is organized into four sections all featuring introductory material and advanced topics, with an emphasis on variability. The first one provides an overview of radiation environments. The second section of the course discusses hardness assurance methodologies. The third one focuses primarily on process variations and cumulative effects in MOSFETs. The final section addresses single event effects in scaled devices.
This short course is intended for system designers, radiation effects engineers, component specialists, and other technical and management personnel who are involved in developing reliable systems designed to operate in radiation environments. It provides a unique opportunity for IEEE NSREC attendees to benefi t from the expertise of the instructors, along with a critical review of state-of-the-art knowledge in the fi eld. Electronic copies of detailed course notes will be provided at registration.
For those interested in Continuing Education Units (CEUs), there will be an open-book exam at the end of the course. The course is valued at 0.6 CEUs, and is endorsed by the IEEE and by the International Association for Continuing Education and Training (IACET).
Each attendee will receive a complimentary CD-ROM that contains an archive of IEEE Nuclear and Space Radiation Effects Conference (NSREC) Short Course Notebooks (1980-2018). This collection covers 39 years of one-day tutorial courses, presented yearly at NSREC. It serves as a valuable reference for students, engineers, and scientists.
PART I – A BRIEF HISTORY OF SPACE CLIMATOLOGY: FROM THE BIG BANG TO THE PRESENT
Dr. Mike Xapsos, NASA Goddard Space Flight Center, will discuss space climatology – the radiation environment observed over an extended period of time at a given location, corresponding to a space mission duration and orbit. It will begin with a unique introduction to the early universe and the origin of particles relevant for radiation effects – electrons, protons, neutrons, and heavy ions. A transitional period leading to modern times will be discussed involving the discovery of sunspots, the solar cycle and the sun’s pervasive influence on space climatology. This leads to the main discussion about modern space climatology, with emphasis on galactic cosmic rays, solar particle events, and trapped particles. Metrics that describe the effects these radiations have on electronic devices and circuits will be introduced. Radiation properties such as elemental composition, fl uxes, energies, and dependence on solar cycle phase and spacecraft orbit will be discussed, with emphasis on variability of these properties. Finally, current radiation models used for space system design along with example applications will be presented. This will complete the attendee’s journey along the space climatology time line ranging from the Big Bang to NSREC 2018!
PART II – RADIATION HARDNESS ASSURANCE: HOW WELL ASSURED DO WE NEED TO BE?
Dr. Renaud Mangeret, Airbus Defence and Space, will discuss the intrinsic variability of numerous parameters within the Radiation Hardness Assurance (RHA) process. From the perspective of a space system provider, the need of supplying radiation robust products to multiple customers requires a cost/schedule effective approach of the RHA process. This results in a permanent trade-off between generic versus application specific approaches in several domains. After a short recap of the radiation environment, the presentation will address the variability issues in the radiation modelling and calculation process, in the area of radiation testing, in the electronic design domain and, finally, in the EEE parts themselves. This will cover a broad range of technical items which are to be put in perspective with the definition of a radiation design margin.
PART III – PROCESS VARIATIONS AND RADIATION EFFECTS IN ADVANCED TRANSISTORS
Dr. Marc Gaillardin, CEA, will present radiation effects in advanced transistors with an emphasis on variability. This part of the short course will focus primarily on microelectronics technologies, transistor architectures, and their evolutions. Both Ultra-Thin SOI and FinFET architectures will be discussed, since they represent the best solutions to meet the requirements for nanometer scaled technology nodes. Then, process variability issues will be introduced to discuss their implications on devices and integrated circuits. The second half will review radiation effects in advanced devices. Total Ionizing Dose effects will be thoroughly investigated through the impact of geometry and device structure to discuss potential variability implications. A discussion about displacement damage dose effects in nano-scaled devices will be included as well. The end of the course will be dedicated to providing perspectives about the use of novel technologies in harsh environments.
PART IV – ADDRESSING DEVICE AND ENVIRONMENT VARIATIONS IN SINGLE EVENT RATE PREDICTIONS
Dr. Brian Sierawski, Vanderbilt University, Institute for Space and Defense Electronics, will review how proton and ion-induced single events are modeled, measured, and extrapolated into an on-orbit response. Limited resources for test and analysis favor minimal characterization and efficient models to estimate the rate of events in space. However, some event rates will not be well-predicted by the measured average device response and will require a greater level of attention. The second part of the course will discuss how variations in devices, events, and environments factor into single event error rates and the extent to which they should be accounted for in ground tests and on-orbit predictions. Notably, highly-scaled memories exhibit enhanced sensitivity to proton and electron upsets and radiation hard circuits can exhibit an ion species dependency. Understanding the limitations of data and models will direct test activities to account for the dominant mechanism for errors. Finally, the presentation will explore how tools have adapted to improve single event rate predictions.