MONDAY, JULY 17, 2006 PONTE VEDRA BEACH, FLORIDA (USA) On behalf of the 2006 Nuclear and Space Radiation Effects Conference (NSREC) Conference Committee, I invite you to attend the 27th annual NSREC Short Course. This year's theme is modeling the space radiation environment and its effects on devices and circuits. Each course will develop the core content of their respective topics from initial background material. This Short Course will be a unique educational opportunity for those who are new to the field of radiation effects as well as experienced engineers, scientists and managers. Each attendee will receive a CD-ROM archive of IEEE NSREC Short Course Notebooks (1980-2006).  Robert Reed Short Course Chairman |
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MODELING THE SPACE RADIATION ENVIRONMENT AND
EFFECTS ON MICROELECTRONIC DEVICES AND CIRCUITS NSREC Short Course Announcement MONDAY, JULY 17, 2006 PONTE VEDRA BEACH, FLORIDA COURSE DESCRIPTION This one-day Short Course will provide a detailed discussion of the methods used by radiation effects engineers to model the space radiation environment and some of its effects on modern devices and circuits. The remarkable advances in modern device technology offers specific challenges for high-fidelity radiation effects modeling. These include the need for improved modeling of the variability of the space radiation, the transport of the environment through spacecraft structures and chip packaging, and detailed single event effects modeling at the device and circuit level. Four talks on different aspects of the problem will be presented. The first talk will be given by Mike Xapsos, NASA expert in radiation environment modeling, and will focus on methods used to predict the space radiation environment. The second talk of the morning, given by Giovanni Santin, ESA expert in radiation transport, will focus on modeling the basic interactions of radiation with matter. The afternoon session will provide two talks focused on Single Event Effects (SEE) modeling. The first one will focus on the use of Technology Computer Aided Design (TCAD) tools, and will be given by Mark Law, leader in TCAD tool development. Jeff Black, Senior Engineer at the Institute for Space and Defense Electronics, will present the last talk of the day on modeling SEEs in integrated circuits. This short course will provide a cohesive set of talks for designers, radiation effects engineers, component specialists and other technical and management personnel who are involved in developing systems designed to operate in a radiation environment. While the focus of the first talk will be on space systems, the last three talks will also be of keen interest to the attendee studying terrestrial radiation environment and effects. This is a unique opportunity for NSREC attendees to benefit from the expertise of the instructors as well as the in-depth coverage and perspective provided by the short course forum. Each lecturer will develop the core content of their respective topics from initial background material, allowing the course to benefit both new and experienced engineers, scientists, and managers. In-depth notes will be provided at registration. For those interested in Continuing Education Units (CEUs), there will be an open-book test at the end of the course. The course is valued at 0.6 CEUs and is endorsed by the IEEE and the International Association for Education and Training (IACET). Each attendee will receive a complimentary CD-ROM that contains an archive of IEEE Nuclear and Space Radiation Effects Conference (NSREC) Short Course Notebooks (1980-2006). This collection covers 27 years of one-day tutorial courses, presented yearly at NSREC. It serves as a valuable reference for students, engineers, and scientists. MODELING THE SPACE RADIATION ENVIRONMENT AND EFFECTS ON MICROELECTRONIC DEVICES AND CIRCUITS PART 1 - MODELING THE SPACE RADIATION ENVIRONMENT Dr. Mike Xapsos, NASA Goddard Space Flight Center, will discuss recent developments in modeling the trapped particle, galactic cosmic ray and solar particle radiation environments. The metrics for describing effects these radiations have on electronic devices and circuits will be introduced. This includes ionizing dose, displacement damage dose and linear energy transfer (LET). The distinction between deterministic and stochastic models will be made and motivation for choosing a particular approach for the different space radiations given. A substantial portion of the course will be devoted to the recent application of models for characterization of radiation environments. The origins of the methods will be described leading up to the environment applications. Example results for different phases of the solar cycle and for missions ranging from low earth orbit out to interplanetary space will be presented. PART 2 - SPACE RADIATION TRANSPORT MODELS Dr. Giovanni Santin, ESA/ESTEC, will provide a review of the physical interactions of the space radiation environment with matter and models used to compute the environment local to the microelectronic circuit. The first portion will be devoted to defining the important physical processes that must be included when modeling the transport of space radiation environment through spacecraft materials. Then he will provide an overview of the current techniques and tools that are available for transport modeling. The last portion will focus on the application and validation of Geant4 for use in transport model of the space environment with an emphasis on effects on microelectronic devices. PART 3 - DEVICE MODELING OF SINGLE EVENT EFFECTS Prof. Mark E. Law, University of Florida, will discuss using device and process simulation tools effectively to model single event upset behaviors. Modeling single event upset provides many challenges to TCAD tools. In this course, practical pitfalls will be described and techniques will be discussed to avoid these problems. Several issues can create problems. First, numerical approximations must be understood and controlled by the user. Second, the device geometry, doping, and materials need to be set up correctly. Third, physical transport models have specific limitations for application to single event simulations. Most TCAD models have been tuned to MOS device transport, and may not be appropriate for bulk charge removal in a single event case. A complex simulation example illustrating these points will be presented to help illustrate good practice. PART 4 - CIRCUIT MODELING OF SINGLE EVENT EFFECTS Jeff Black and Dr. Tim Holman, Vanderbilt University Institute for Space and Defense Electronics, will discuss the various tools currently available for simulating single event effects at the circuit level. Circuit level simulation can be performed more efficiently than TCAD simulation at a cost of reduced simulation fidelity. This course will provide an understanding of the circuit simulation fidelity and how to make use of the results in design and analysis tasks using modern technology. They will provide an overview of single event effects mechanisms with emphasis on the circuit structures responsible for charge generation. They will also provide a classification of circuit simulation tools and describe the simulation challenges and potential pitfalls. The bulk of the course will cover the tools available for circuit simulation, defining the circuits and stimulus inputs, setting up the simulations, and analyzing the results. An example of single event effects simulation will be shown on each class of circuit simulator. Download this short course flyer for printing. GO BACK to NSREC |