{"id":8395,"date":"2025-05-01T16:09:05","date_gmt":"2025-05-01T16:09:05","guid":{"rendered":"https:\/\/www.nsrec.com\/?page_id=8395"},"modified":"2026-06-16T19:35:37","modified_gmt":"2026-06-16T19:35:37","slug":"nsrec-2026-schedule","status":"publish","type":"page","link":"https:\/\/www.nsrec.com\/nsrec-2026-schedule\/","title":{"rendered":"NSREC 2026 Schedule"},"content":{"rendered":"[vc_row][vc_column][vc_column_text]<style id=\"ea_dynamic_css4247\">#sp-ea-4247 .spcollapsing{height: 0; overflow: hidden; transition-property: height; transition-duration: 500ms;}#sp-ea-4247.sp-easy-accordion>.sp-ea-single.eap_inactive>.ea-header a {background-color: #bb0000 !important; color: #fff !important;}#sp-ea-4247.sp-easy-accordion>.sp-ea-single{ margin-bottom: 10px; border: 1px solid #e2e2e2; border-radius: 3px;}#sp-ea-4247.sp-easy-accordion>.sp-ea-single.ea-expand{ border-color: #e2e2e2;}#sp-ea-4247.sp-easy-accordion>.sp-ea-single:hover{ border-color: 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rgba(68,68,68,0.71);}#sp-ea-4250.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a { border: 1px solid #DAD6DA;border-radius: 2px;background-color: transparent;color: #444;}#sp-ea-4250.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a:hover { border-color: #444;background-color: #444;color: #fff;}#sp-ea-4250.sp-easy-accordion>.sp-ea-single>>.sp-collapse>.ea-body .eap-product-cart-button .eap-product-quantity .eap_input_text {border: 1px solid #DAD6DA;}#sp-ea-4250.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button a.add_to_cart_button{position: relative;}<\/style><div id=\"sp-eap-accordion-section-4250\" class=\"sp-eap-container\"><div id=\"sp-ea-4250\" class=\"sp-ea-twelve sp-easy-accordion \" data-ex-icon=\"fa-angle-right\" data-col-icon=\"fa-angle-down\" data-ea-active=\"ea-click\" data-ea-mode=\"vertical\" data-ea-multi-column=\"\" data-ea-coll=\"\" data-keep-accordion=\"\" data-autoclose=\"\" data-preloader=\"\" data-scroll-active-item=\"\" data-offset-to-scroll=\"0\" data-autoplaytime=\"3000\" data-expand=\"\" data-post-id=\"4250\" data-accordion_mode=\"ea-all-close\">\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"0\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42500\" href=\"#\" data-title=\"efaq-800-am-student-awards\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:00 AM | Student Awards\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42500\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Radiation Effects Steering Group<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"1\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42501\" href=\"#\" data-title=\"efaq-810-am-short-course-introduction\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:10 AM | Short Course Introduction\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42501\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Dr. Pascale Gouker, MIT Lincoln Laboratory<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"2\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42502\" href=\"#\" data-title=\"efaq-820-am-part-i-applications-of-the-natural-space-environment-to-heavy-ion-single-event-effects-testing\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:20 AM | Part I \u2013 Applications of the Natural Space Environment to Heavy Ion Single Event Effects Testing\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42502\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Justin Likar, Johns Hopkins University Applied Physics Laboratory<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"3\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42503\" href=\"#\" data-title=\"efaq-950-am-break\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:50 AM | Break\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42503\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Foyer &amp; Terrace<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"4\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42504\" href=\"#\" data-title=\"efaq-1020-am-part-ii-radiation-hardness-assurance-implementations-in-the-european-space-agency-esa-projects\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:20 AM | Part II \u2013 Radiation Hardness Assurance Implementations in the European Space Agency (ESA) Projects\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42504\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Dr. Cristina Plettner, European Space Research and Technology Centre (ESTEC), Avionics<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"5\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42505\" href=\"#\" data-title=\"efaq-1150-am-short-course-luncheon\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:50 AM | Short Course Luncheon\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42505\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Ballroom B<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"6\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42506\" href=\"#\" data-title=\"efaq-110-pm-part-iii-single-event-effects-upset-rate-analysis-for-devices-and-systems\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  1:10 PM | Part III \u2013 Single Event Effects: Upset Rate Analysis for Devices and Systems\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42506\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Dr. David Hansen, L3Harris<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"7\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42507\" href=\"#\" data-title=\"efaq-240-pm-break\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  2:40 PM | Break\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42507\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Foyer &amp; Terrace<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"8\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42508\" href=\"#\" data-title=\"efaq-310-pm-part-iv-radiation-hardness-assurance-through-system-level-testing-for-commercial-space\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  3:10 PM | Part IV \u2013 Radiation Hardness Assurance Through System-Level Testing for Commercial Space\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42508\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Dr. Andrea Coronetti, The Exploration Company<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"9\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42509\" href=\"#\" data-title=\"efaq-440-pm-wrap-up\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  4:40 PM | Wrap-Up\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42509\" data-parent=\"#sp-ea-4250\">\n\t\t\t<div class=\"ea-body animated normal\"> No Content <\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"10\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425010\" href=\"#\" data-title=\"efaq-445-pm-exam\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  4:45 PM | Exam\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425010\" data-parent=\"#sp-ea-4250\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>For students requesting CEU credit only<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"11\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425011\" href=\"#\" data-title=\"efaq-530-pm-end-of-short-course\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  5:30 PM | End of Short Course\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425011\" data-parent=\"#sp-ea-4250\">\n\t\t\t<div class=\"ea-body animated normal\"> No Content <\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t<\/div><\/div>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"1\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42471\" href=\"#\" data-title=\"efaq-tuesday\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  Tuesday\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42471\" data-parent=\"#sp-ea-4247\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<style id=\"ea_dynamic_css4253\">#sp-ea-4253 .spcollapsing{height: 0; overflow: hidden; transition-property: height; transition-duration: 500ms;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single.eap_inactive>.ea-header a {background-color: #bb0000 !important; color: #fff !important;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single{ margin-bottom: 10px; border: 1px solid #e2e2e2; border-radius: 3px;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single.ea-expand{ 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1px solid #e2e2e2; border-radius: 0; border-bottom: 1px solid #e2e2e2;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {margin-right: 10px;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {float: right;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {margin-right: 0;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.ea-header a {border-right: 1px solid #e2e2e2; border-left:0}#sp-ea-4253 #eap_faq_search_bar_container {display:none; opacity:0;}#sp-ea-4253 #eap_faq_search_bar_container span::before{content:\"\";}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body p{ padding:0px}#sp-ea-4253>.sp-ea-single>.sp-collapse>.ea-body .eap-product-price {color: #444;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-price del{color: rgba(68,68,68,0.71);}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a { border: 1px solid #DAD6DA;border-radius: 2px;background-color: transparent;color: #444;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a:hover { border-color: #444;background-color: #444;color: #fff;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>>.sp-collapse>.ea-body .eap-product-cart-button .eap-product-quantity .eap_input_text {border: 1px solid #DAD6DA;}#sp-ea-4253.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button a.add_to_cart_button{position: relative;}<\/style><div id=\"sp-eap-accordion-section-4253\" class=\"sp-eap-container\"><div id=\"sp-ea-4253\" class=\"sp-ea-twelve sp-easy-accordion \" data-ex-icon=\"fa-angle-right\" data-col-icon=\"fa-angle-down\" data-ea-active=\"ea-click\" data-ea-mode=\"vertical\" data-ea-multi-column=\"\" data-ea-coll=\"\" data-keep-accordion=\"\" data-autoclose=\"\" data-preloader=\"\" data-scroll-active-item=\"\" data-offset-to-scroll=\"0\" data-autoplaytime=\"3000\" data-expand=\"\" data-post-id=\"4253\" data-accordion_mode=\"ea-all-close\">\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"0\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42530\" href=\"#\" data-title=\"efaq-700-am-breakfast\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  7:00 AM | Breakfast\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42530\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>For registered conference attendees<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"1\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42531\" href=\"#\" data-title=\"efaq-800-am-opening-remarks\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:00 AM | Opening Remarks\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42531\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Philippe Paillet, CEA, General Chair<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"2\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42532\" href=\"#\" data-title=\"efaq-805-am-awards-presentation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:05 AM | Awards Presentation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42532\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Kay Chesnut, RTX, Radiation Effects Steering Group, Executive Chair<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"3\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42533\" href=\"#\" data-title=\"efaq-900-am-technical-session-opening-remarks\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:00 AM | Technical Session Opening Remarks\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42533\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Sylvain Girard, University of St Etienne, Technical Program Chair<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"4\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42534\" href=\"#\" data-title=\"efaq-session-a-single-event-effects-mechanisms-and-modeling\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION A \u2014 Single-Event Effects: Mechanisms and Modeling\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42534\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>9:05 AM Session Introduction &middot; Chair: Jeffrey Warner (Northrop Grumman)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"5\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42535\" href=\"#\" data-title=\"efaq-910-am-a-1-low-loss-vertical-\u03b2-ga2o3-high-power-diodes-with-engineered-contacts-seb-assessment-and-field-plate-effects\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:10 AM | A-1: Low-loss Vertical \u03b2-Ga2O3 High-Power Diodes with Engineered Contacts: SEB Assessment and Field-Plate Effects\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42535\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Islam1, P. Das2, D. Ball1, J. Speck3, E. Farzana2, D. Fleetwood1, R. Schrimpf1<\/strong><\/p>\n<p>1. Vanderbilt University, USA &nbsp; 2. Iowa State University, USA &nbsp; 3. University of California, USA<\/p>\n<p>Vertical \u03b2-Ga\u2082O\u2083 diodes with engineered Pt\/PtO\u2093\/thin-Pt Schottky contacts exhibit reduced turn-on voltage. Single-event burnout is experimentally evaluated on structures with and without field plates. TCAD analysis provides insight into the responsible mechanisms.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"6\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42536\" href=\"#\" data-title=\"efaq-925-am-a-2-effect-of-multi-soft-program-scheme-on-single-event-upset-in-3d-charge-trap-nand-flash-memory\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:25 AM | A-2: Effect of Multi-Soft-Program Scheme on Single-Event Upset in 3D Charge-Trap NAND Flash Memory\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42536\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Park1, V. Shastry1, M. Breeding2, S. Yi1<\/strong><\/p>\n<p>1. Texas A&amp;M University, USA &nbsp; 2. Sandia National Laboratories, USA<\/p>\n<p>Effects of multi-soft-program on retention and single-event upset in 176-layer 3D charge- trap (CT) NAND flash are investigated, clarifying the influence of trap occupancy in the CT layer on retention characteristics and heavy-ion-induced threshold voltage loss.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"7\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42537\" href=\"#\" data-title=\"efaq-940-am-a-3-angular-effects-on-single-event-vulnerability-at-the-3-and-5-nm-bulk-finfet-nodes\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:40 AM | A-3: Angular Effects on Single-Event Vulnerability at the 3- and 5-nm Bulk FinFET Nodes\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42537\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Kronenberg1, S. Tolson1, X. Zhao1, Y. Xiong1, N. Pieper1, D. Ball1, B. Bhuva1<\/strong><\/p>\n<p>1. Vanderbilt University, USA<\/p>\n<p>Angular single-event effects at 3- and 5-nm bulk FinFET nodes are presented. The relationship between angular incidence and SE vulnerability is explored as a function of technology scaling, critical charge, and particle LET.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"8\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42538\" href=\"#\" data-title=\"efaq-955-am-a-4-study-of-angular-and-material-dependence-of-single-event-effects-in-enhancement-mode-gan-hemts\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:55 AM | A-4: Study of Angular and Material Dependence of Single Event Effects in Enhancement- mode GaN HEMTs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42538\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>P. Maloney1, A. Billa1, B. Bolton1, S. Hankinson1, S. Shorina1, H. Gingold1, J. Gray2, L. Massengill2, D. McMorrow3, D. Fleetwood2, E. Zhang1<\/strong><\/p>\n<p>1. University of Central Florida, USA &nbsp; 2. Vanderbilt University, USA &nbsp; 3. US Naval Research Laboratory, USA<\/p>\n<p>Heavy-ion testing of enhancement-mode GaN HEMTs shows SELC and SEB thresholds depend strongly on incident angle and overlying metallization. SEM and SRIM reveal Cu interconnects amplify charge deposition, explaining reduced thresholds at near-normal incidence.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"9\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42539\" href=\"#\" data-title=\"efaq-1010-am-break\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:10 AM | Break\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42539\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Level 1 \u2013 Exhibit Hall A<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"10\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425310\" href=\"#\" data-title=\"efaq-session-b-single-event-effects-devices-and-integrated-circuits\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION B \u2014 Single-Event Effects: Devices and Integrated Circuits\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425310\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>10:40 AM Session Introduction &middot; Chair: Ruben Garc\u00eda Al\u00eda (CERN)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"11\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425311\" href=\"#\" data-title=\"efaq-1045-am-b-1-let-and-orientation-dependent-angular-seu-in-12-nm-bulk-finfet-flip-flops\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:45 AM | B-1: LET and Orientation Dependent Angular SEU in 12-nm Bulk FinFET Flip-Flops\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425311\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>X. Lu1, J. Debnath2, E. Zhang2, J. Xing1, C. Elash1, D. Ramaswami1, Q. Chen1, L. Chen1<\/strong><\/p>\n<p>1. University of Saskatchewan, Canada &nbsp; 2. University of Central Florida, USA<\/p>\n<p>Angular heavy-ion SEU cross-sections were measured for 12-nm FinFET flip-flops at 0\u00b0 and 60\u00b0 across multiple LETs and fin orientations. Results show increased \u03c3SEU under tilt, demonstrating scaling-dependent worst-case conditions and limitations of normal- incidence testing.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"12\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425312\" href=\"#\" data-title=\"efaq-1100-am-b-2-angular-dependence-of-single-event-upsets-in-3d-nand-flash-arrays-with-very-high-energy-ion-beams\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:00 AM | B-2: Angular Dependence of Single Event Upsets in 3D NAND Flash Arrays with Very High Energy Ion Beams\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425312\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Bagatin1, S. Beltrami2, A. Benvenuti2, A. Waets3, N. Emriskova3, R. Garcia3, S. Gerardin1<\/strong><\/p>\n<p>1. University of Padova, Italy &nbsp; 2. Micron Technology and Products Group, Italy &nbsp; 3. CERN, Switzerland<\/p>\n<p>The effects of very-high-energy ions on 3D NAND Flash arrays are investigated. Cross sections at grazing angles, the spatial distribution, and clustering of radiation-induced errors are analyzed by exploiting the unique capabilities of high-energy beams.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"13\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425313\" href=\"#\" data-title=\"efaq-1115-am-b-3-reliability-of-processing-in-memory-accelerators-for-deep-neural-networks-inference\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:15 AM | B-3: Reliability of Processing-in-Memory Accelerators for Deep Neural Networks Inference\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425313\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Wagner1, F. Santos1, M. Traiola1, P. Rech2, A. Kritikakou1<\/strong><\/p>\n<p>1. INRIA, France &nbsp; 2. University of Trento, Italy<\/p>\n<p>We present the first proton-irradiation campaign for a commercial processing-in- memory (PIM) AI accelerator executing end-to-end DNN inference. We report results from 10 DNN models and a microbenchmark, showing higher error criticality than conventional accelerators.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"14\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425314\" href=\"#\" data-title=\"efaq-1130-am-b-4-single-event-leakage-current-and-burnout-in-high-voltage-gan-and-sic-pin-diodes-a-comparative-analysis\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:30 AM | B-4: Single-Event Leakage Current and Burnout in High-Voltage GaN and SiC PiN Diodes: A Comparative Analysis\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425314\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>G. Mayberry1, X. Zhao2, H. Gingold3, P. Maloney3, S. Islam1, A. Sengupta4, X. Shen5, A. Senarath1, O. Meilander1, B. Zhang2, S. Hankinson3, B. Bolton3, W. Hubbard6, S. Kosier1, T. Roy2, E. Zhang3, D. Fleetwood1, S. Pantelides1, M. Ebrish1, R. Schrimpf1<\/strong><\/p>\n<p>1. Vanderbilt University, USA &nbsp; 2. Duke University, USA &nbsp; 3. University of Central Florida, USA &nbsp; 4. DLR, Germany &nbsp; 5. University of Memphis, USA &nbsp; 6. NanoElectronic Imaging, Inc., USA<\/p>\n<p>High-voltage GaN and SiC vertical PiN diodes were tested for SEEs at similar voltages for a wide LET range. The lower SEE tolerance of GaN is attributed to lower defect- multiplication activation energies.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"15\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425315\" href=\"#\" data-title=\"efaq-1145-am-b-5-mechanism-of-heavy-ion-induced-leakage-current-in-gan-hemts-buffer-layers\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:45 AM | B-5: Mechanism of Heavy-Ion Induced Leakage Current in GaN HEMTs Buffer Layers\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425315\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Gray1, S. Shorina2, J. Vielmette1, D. Ball1, E. Zhang2, P. Maloney2, H. Gingold2, B. Bolton2, S. Hankinson2, A. Billa2, H. Parra2, J. Trippe1, M. Alles1, S. Kosier1, D. Fleetwood1, R. Schrimpf1, L. Massengill1<\/strong><\/p>\n<p>1. Vanderbilt University, USA &nbsp; 2. University of Central Florida, USA<\/p>\n<p>Heavy ion irradiation enhances leakage currents in GaN-based HEMTs. Experimental analysis confirms a permanent drain-to-source leakage path through the buffer layer under the gate, enabled by defect-assisted hopping.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"16\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425316\" href=\"#\" data-title=\"efaq-1200-am-b-6-single-event-burnout-of-aln-diodes-under-heavy-ion-irradiation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  12:00 AM | B-6: Single-Event Burnout of AlN Diodes under Heavy-ion Irradiation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425316\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>C. Qui\u00f1ones1, J. Osheroff2, P. Reddy3, S. Mita3, R. Kirste3, R. Collazo1, Z. Sitar1<\/strong><\/p>\n<p>1. North Carolina State University, USA &nbsp; 2. NASA Goddard Space Flight Center, USA &nbsp; 3. Adroit Materials, USA<\/p>\n<p>Single-event burnout was observed in AlN Schottky barrier and p-n junction diodes under heavy-ion irradiation. Burnout thresholds decreased with increasing ion LET, similar to trends in other wide-bandgap semiconductors.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"17\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425317\" href=\"#\" data-title=\"efaq-1215-pm-lunch\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  12:15 PM | Lunch\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425317\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>PRCC Level 1 \u2013 Exhibit Hall A &middot; Young Professionals (YP) Luncheon at the Sheraton Hotel<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"18\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425318\" href=\"#\" data-title=\"efaq-session-c-photonics-devices-and-integrated-circuits\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION C \u2014 Photonics Devices and Integrated Circuits\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425318\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>2:15 PM Session Introduction &middot; Chair: Julien Mekki (CNES)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"19\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425319\" href=\"#\" data-title=\"efaq-220-pm-c-1-dose-rate-and-temperature-effects-on-the-radiation-induced-attenuation-of-h2-loaded-ge-doped-optical-fibers\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  2:20 PM | C-1: Dose Rate and Temperature Effects on the Radiation-Induced Attenuation of H2-loaded Ge-doped Optical Fibers\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425319\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Morana1, S. Acid1, E. Marin1, A. Boukenter1, Y. Ouerdane1, S. Girard1<\/strong><\/p>\n<p>1. Universit\u00e9 de Saint-Etienne, France<\/p>\n<p>We study the dose-rate effect on the RIA of H2-loaded Ge-doped fibers up to a dose of 100 kGy, to better understand the influence of the molecular hydrogen, that seems to stabilize the defects.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"20\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425320\" href=\"#\" data-title=\"efaq-235-pm-c-2-real-time-responses-of-cots-optical-fibers-exposed-to-x-ray-pulses\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  2:35 PM | C-2: Real time Responses of COTS Optical Fibers exposed to X-Ray Pulses\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425320\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Roche1, O. Duhamel1, D. Lambert1, M. Gaillardin2, S. Girard3, P. Paillet1<\/strong><\/p>\n<p>1. CEA\/CESTA, France &nbsp; 2. CEA\/Gramat, France &nbsp; 3. Universit\u00e9 de Saint-Etienne, France<\/p>\n<p>We investigate the transient responses of commercial off-the-shelf (COTS) optical fibers under pulsed X-rays with high dose rate. We highlight a large diversity of the fiber response due to different doping strategies.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"21\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425321\" href=\"#\" data-title=\"efaq-250-pm-c-3-gamma-irradiation-total-ionizing-and-displacement-damage-effects-in-a-quanta-image-sensor\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  2:50 PM | C-3: Gamma Irradiation Total-Ionizing and Displacement Damage Effects in a Quanta Image Sensor\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425321\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Krynski1,2, A. Salih-Alj1, A. Le Roch2, V. Bernard2, V. Lalucaa2, C. Virmontois2, V. Goiffon1<\/strong><\/p>\n<p>1. ISAE-SUPAERO, France &nbsp; 2. CNES, France<\/p>\n<p>A gamma irradiation campaign on a photon-counting image sensor reveals a degradation in noise characteristics and appearance of point defects. Many pixels\u2019 dark currents are reduced after gamma exposure, showing a unexpected susceptibility to TID. \u2013 BREAK<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"22\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425322\" href=\"#\" data-title=\"efaq-335-pm-c-4-radiation-effects-on-nanocrystal-based-logarithmic-short-wavelength-infrared-image-sensor\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  3:35 PM | C-4: Radiation Effects on Nanocrystal-Based Logarithmic Short Wavelength Infrared Image Sensor\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425322\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Neyret1-4, P. Giudicelli-Vernet1,3, S. Demiguel2, S. Masseno1, J. Belloir3, E. Lhuillier4, V. Goiffon1<\/strong><\/p>\n<p>1. ISAE-SUPAERO, France &nbsp; 2. Thales Alenia Space, France &nbsp; 3. CNES, France &nbsp; 4. INSP CNRS - Sorbonne Universit\u00e9, France<\/p>\n<p>Radiation effects on Lead Sulfide nanocrystal-based short-wavelength infrared open pixel logarithmic cameras are tested. Imaging performance and device characteristics are tracked upon proton irradiation, demonstrating ionizing and non-ionizing tolerance and suitability for space environments.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"23\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425323\" href=\"#\" data-title=\"efaq-350-pm-c-5-radiation-induced-attenuation-in-silicon-photonics-waveguides\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  3:50 PM | C-5: Radiation-Induced Attenuation in Silicon Photonics Waveguides\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425323\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>D. Alfiero1, L. Olantera1, C. Scarcella1, S. Detraz1, J. Troska1<\/strong><\/p>\n<p>1. CERN, Switzerland<\/p>\n<p>Attenuation changes in Si-photonics waveguides were characterized under displacement damage and ionizing doses relevant to high-energy physics experiments. All waveguide types showed increased attenuation; O-band waveguides were most sensitive, with 0.65dB\/mm after 7\u00d71015n\/cm2 neutron fluence.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"24\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425324\" href=\"#\" data-title=\"efaq-405-pm-c-6-electrical-vs-optical-degradation-due-to-cumulative-dose-in-vertical-phototransistors\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  4:05 PM | C-6: Electrical vs. Optical Degradation due to Cumulative Dose in Vertical Phototransistors\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425324\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>B. Ringel1, J. Heimerl1, D. Sam1, M. Hosseinzadeh1, Q. Parker1, J. Teng2, J. Cressler1<\/strong><\/p>\n<p>1. Georgia Institute of Technology, USA &nbsp; 2. The Aerospace Corporation, USA<\/p>\n<p>TID responses of vertical phototransistors based on SiGe-HBTs are evaluated following exposure using a 60Co source. Differences in electrical and optical degradation are observed, highlighting electrical-only analysis is not sufficient for hardness assurance of photodetectors.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"25\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse425325\" href=\"#\" data-title=\"efaq-evening-industrial-exhibits-reception\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  Evening | Industrial Exhibits Reception\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse425325\" data-parent=\"#sp-ea-4253\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Hors d'oeuvres in the Exhibit Area; open to all NSREC attendees and their guests.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t<\/div><\/div>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"2\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42472\" href=\"#\" data-title=\"efaq-wednesday\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  Wednesday\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42472\" data-parent=\"#sp-ea-4247\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<style id=\"ea_dynamic_css4266\">#sp-ea-4266 .spcollapsing{height: 0; 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border: none;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.ea-header a {border-left: 1px solid #e2e2e2; border-radius: 0; border-bottom: 1px solid #e2e2e2;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {margin-right: 10px;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {float: right;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {margin-right: 0;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.ea-header a {border-right: 1px solid #e2e2e2; border-left:0}#sp-ea-4266 #eap_faq_search_bar_container {display:none; opacity:0;}#sp-ea-4266 #eap_faq_search_bar_container span::before{content:\"\";}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body p{ padding:0px}#sp-ea-4266>.sp-ea-single>.sp-collapse>.ea-body .eap-product-price {color: #444;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-price del{color: rgba(68,68,68,0.71);}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a { border: 1px solid #DAD6DA;border-radius: 2px;background-color: transparent;color: #444;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a:hover { border-color: #444;background-color: #444;color: #fff;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>>.sp-collapse>.ea-body .eap-product-cart-button .eap-product-quantity .eap_input_text {border: 1px solid #DAD6DA;}#sp-ea-4266.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button a.add_to_cart_button{position: relative;}<\/style><div id=\"sp-eap-accordion-section-4266\" class=\"sp-eap-container\"><div id=\"sp-ea-4266\" class=\"sp-ea-twelve sp-easy-accordion \" data-ex-icon=\"fa-angle-right\" data-col-icon=\"fa-angle-down\" data-ea-active=\"ea-click\" data-ea-mode=\"vertical\" data-ea-multi-column=\"\" data-ea-coll=\"\" data-keep-accordion=\"\" data-autoclose=\"\" data-preloader=\"\" data-scroll-active-item=\"\" data-offset-to-scroll=\"0\" data-autoplaytime=\"3000\" data-expand=\"\" data-post-id=\"4266\" data-accordion_mode=\"ea-all-close\">\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"0\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42660\" href=\"#\" data-title=\"efaq-700-am-breakfast\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  7:00 AM | Breakfast\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42660\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>For registered conference attendees<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"1\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42661\" href=\"#\" data-title=\"efaq-830-am-invited-speaker\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:30 AM | Invited Speaker\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42661\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>The History of Puerto Rico and San Juan<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"2\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42662\" href=\"#\" data-title=\"efaq-session-d-radiation-effects-in-devices-and-integrated-circuits\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION D \u2014 Radiation Effects in Devices and Integrated Circuits\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42662\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>9:30 AM Session Introduction &middot; Chair: Corinna Martinella (University of Montpellier)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"3\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42663\" href=\"#\" data-title=\"efaq-935-am-d-1-optimizing-electrical-rapid-annealing-for-tid-recovery-in-bulk-finfets\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:35 AM | D-1: Optimizing Electrical Rapid Annealing for TID Recovery in Bulk FinFETs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42663\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Vidana1, C. McKay1, D. Hughart1, T. Kirby1,2, N. Nowlin1, N. Dodds1, E. Zhang3, H. Barnaby2, D. Fleetwood4<\/strong><\/p>\n<p>1. Sandia National Laboratories, USA &nbsp; 2. Arizona State University, USA &nbsp; 3. University of Central Florida, USA &nbsp; 4. Vanderbilt University, USA<\/p>\n<p>Electrical rapid annealing parameters are optimized to reverse TID-induced degradation in bulk FinFETs. Bulk-bias magnitude controls recovery rate dominated by tunneling- assisted charge neutralization, validated by low temperature experiments and TCAD simulations.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"4\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42664\" href=\"#\" data-title=\"efaq-950-am-d-2-total-ionizing-dose-effects-in-qlc-3-d-nand-characterization-analysis-and-mitigation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:50 AM | D-2: Total Ionizing Dose Effects in QLC 3-D NAND: Characterization, Analysis and Mitigation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42664\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Kumar1, H. Ur Rahman1, I. Chatterjee2, B. Ray1<\/strong><\/p>\n<p>1. Colorado State University, USA &nbsp; 2. Airbus, Germany<\/p>\n<p>This work performs total-ionizing-dose effects characterization of Quad-level-cell 3-D NAND flash, revealing data corruption at 5 krad(Si). We propose logical downscaling and optimized read to extend TID tolerance beyond 25 krad(Si).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"5\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42665\" href=\"#\" data-title=\"efaq-1005-am-d-3-investigation-of-the-physical-mechanisms-responsible-for-tid-and-electrical-stress-susceptibility-in-p-gan-power-hemts\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:05 AM | D-3: Investigation of the Physical Mechanisms Responsible for TID and Electrical Stress Susceptibility in p-GaN Power HEMTs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42665\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>H. Couillaud1, M. Gaillardin1, L. Artola2, G. Hubert2<\/strong><\/p>\n<p>1. CEA, France &nbsp; 2. ONERA, France<\/p>\n<p>Physical mechanisms contribution underlying static electrical parameter instabilities in a COTS p-GaN HEMT with Schottky gate contact are analyzed, focusing on the combined impact of total ionizing dose and several bias conditions. 10:20 \u2013 BREAK<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"6\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42666\" href=\"#\" data-title=\"efaq-1050-am-d-4-total-ionizing-dose-effects-in-algan-gan-finfets\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:50 AM | D-4: Total-Ionizing-Dose Effects in AlGaN\/GaN FinFETs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42666\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>T. Liu1, H. Lee2, S. Islam1, E. Zhang3, R. Reed1, R. Schrimpf1, S. Rajan4, D. Fleetwood1<\/strong><\/p>\n<p>1. Vanderbilt University, USA &nbsp; 2. Texas Instruments, USA &nbsp; 3. University of Central Florida, USA &nbsp; 4. Ohio State University, USA<\/p>\n<p>AlGaN\/GaN FinFETs and otherwise similar planar devices were subjected to 1.8-MeV proton irradiation and 10-keV X-ray irradiation. FinFETs exhibit less degradation in threshold voltage and transconductance than planar devices as a result of enhanced gate control.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"7\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42667\" href=\"#\" data-title=\"efaq-1105-am-d-5-heavy-ion-induced-degradation-dependence-on-irradiation-temperature-in-gan-hemts\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:05 AM | D-5: Heavy-Ion-Induced Degradation Dependence on Irradiation Temperature in GaN HEMTs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42667\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>K. Niskanen1, A. Tallarico2, A. Javanainen1, A. Michez3, J. Boch4, F. Wrobel4, R. Germanicus5, H. Kettunen1<\/strong><\/p>\n<p>1. University of Jyv\u00e4skyl\u00e4, Finland &nbsp; 2. Universit\u00e0 di Bologna, Italy &nbsp; 3. Delphea, France &nbsp; 4. Universit\u00e9 de Montpellier, France &nbsp; 5. Universit\u00e9 de Normandie, France<\/p>\n<p>The effect of temperature on the heavy ion response of gallium nitride high electron mobility transistors is presented. An order of magnitude higher degradation rate is observed at 363 K compared to room temperature irradiation.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"8\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42668\" href=\"#\" data-title=\"efaq-1120-am-d-6-the-effect-of-tid-on-sram-stability-and-puf-in-globalfoundries-14-nm-finfet-technology\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:20 AM | D-6: The Effect of TID on SRAM Stability and PUF in GlobalFoundries 14-nm FinFET Technology\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42668\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>Y. Xiong1, A. Vidana1, N. Dodds1, B. Bhuva2, N. Nowlin1<\/strong><\/p>\n<p>1. Sandia National Laboratories, USA &nbsp; 2. Vanderbilt University, USA<\/p>\n<p>SRAM stability is evaluated for PUF hardware authentication at a 14-nm bulk FinFET node. Results show TID significantly changes data retention voltages and power-on states of bitcells in high-performance designs but not in high-density designs.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"9\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42669\" href=\"#\" data-title=\"efaq-1020-am-break\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:20 AM | Break\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42669\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Level 1 \u2013 Exhibit Hall A<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"10\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426610\" href=\"#\" data-title=\"efaq-session-e-environments-facilities-and-dosimetry\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION E \u2014 Environments, Facilities, and Dosimetry\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426610\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>11:35 AM Session Introduction &middot; Chair: Cornelia Hoehr (TRIUMF)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"11\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426611\" href=\"#\" data-title=\"efaq-1140-am-e-1-timepix2-and-soi-microdosimeter-comparison-of-response-in-heavy-ion-beam\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:40 AM | E-1: TimePix2 and SOI Microdosimeter: Comparison of Response in Heavy Ion Beam\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426611\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>L. Tran1, D. Miller1, S. George2, V. Pan1, J. Vohradsky1, D. Bennett1, S. Rozhdestvenskyy3, M. Povoli4, A. Kok4, S. Kodaira5, H. Kitamura5, T. Inaniwa5, L. Pinsky3, A. Rosenfeld1<\/strong><\/p>\n<p>1. University of Wollongong, Australia &nbsp; 2. NASA, USA &nbsp; 3. University of Houston, USA &nbsp; 4. SINTEF, Norway &nbsp; 5. National Institutes for Quantum and Radiological Science and Technology, Japan<\/p>\n<p>SOI microdosimeter and TimePix responses were compared behind aluminium shielding of varying thicknesses to simulate astronaut exposure using 290MeV\/u 12C, 400MeV\/u Ne, 800MeV\/u 28Si, and 650MeV\/u 40Ar ions. Good agreement was observed.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"12\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426612\" href=\"#\" data-title=\"efaq-1155-am-e-2-temperature-calibration-of-radioluminescent-pure-silica-core-fiber-based-dosimeters-for-space-applications\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:55 AM | E-2: Temperature Calibration of Radioluminescent Pure Silica Core Fiber Based Dosimeters for Space Applications\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426612\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Acid1,2, A. Morana2, I. Zghari3, M. Aubry4, N. Kerboub1, J. Guillermin4, J. Mekki1, Y. Ouerdane2, M. Darnon2, H. El Hamzaoui3, B. Capoen3, M. Bouazaoui3, A. Boukenter2, S. Girard2<\/strong><\/p>\n<p>1. CNES, France &nbsp; 2. Universit\u00e9 de Saint Etienne, France &nbsp; 3. Universit\u00e9 de Lille, France &nbsp; 4. TRAD, France<\/p>\n<p>We demonstrate temperature calibrated radioluminescent dosimetry using pre-irradiated pure silica core optical fibers, achieving stable real-time dose-rate measurements under coupled temperature and dose-rate variations, with mean errors below 1.5%, validating feasibility for space radiation monitoring. \u2013 LUNCH at Level 1 - EXHIBIT HALL A<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"13\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426613\" href=\"#\" data-title=\"efaq-200-pm-e-3-commercial-solid-state-detectors-for-identifying-pulsed-laser-operating-parameters-for-surrogate-see-testing\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  2:00 PM | E-3: Commercial Solid-State Detectors for Identifying Pulsed-Laser Operating Parameters for Surrogate SEE Testing\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426613\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Hales1, A. Ildefonso2, T. Crane1, A. Khachatrian1, D. McMorrow1<\/strong><\/p>\n<p>1. US Naval Research Laboratory, USA &nbsp; 2. Indiana University Bloomington, USA<\/p>\n<p>This work identifies solid-state detectors that exhibit transient responses which are strongly dependent on pulsed-laser operating parameters. Such standardized reference detectors are important for providing repeatability and traceability in surrogate single- event effects testing.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"14\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426614\" href=\"#\" data-title=\"efaq-215-pm-e-4-influence-of-pure-silica-core-optical-fibers-as-transport-fibers-in-a-radioluminescence-based-dosimetry-system\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  2:15 PM | E-4: Influence of Pure-Silica Core Optical Fibers as Transport Fibers in a Radioluminescence- based Dosimetry System\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426614\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>F. Fricano1, A. Morana2, Y. Ouerdane2, D. Lambert1, P. Paillet1, S. Girard2<\/strong><\/p>\n<p>1. CEA\/CESTA, France &nbsp; 2. Universit\u00e9 de Saint Etienne, France<\/p>\n<p>The influence of fibers with different hydroxyl (OH) group contents, commonly used as transport fibers in dosimetry systems based on the radioluminescence of scintillating optical fibers, such as Ce3+-doped fibers, is evaluated.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"15\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426615\" href=\"#\" data-title=\"efaq-230-pm-e-5-dual-reference-level-inversion-for-high-linearity-in-situ-radiation-dosimetry-in-3d-nand-flash\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  2:30 PM | E-5: Dual-Reference-Level Inversion for High-Linearity In-Situ Radiation Dosimetry in 3D NAND Flash\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426615\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Dong1, W. Chen1, Z. Zhang1, Y. Ouyang1, L. Cai1<\/strong><\/p>\n<p>1. Sun Yat-sen University, China<\/p>\n<p>This work demonstrates a high-linearity radiation dosimeter using commercial 3D NAND. The dual-reference-level sampling technique achieves linearity above 0.9867 up to 35 krad(Si) with 3.0% maximum relative error, enabling accurate in-situ monitoring for aerospace applications.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"16\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426616\" href=\"#\" data-title=\"efaq-1210-pm-lunch\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  12:10 PM | Lunch\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426616\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Level 1 \u2013 Exhibit Hall A &middot; Women in Engineering (WIE) Luncheon at the Sheraton Hotel<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"17\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426617\" href=\"#\" data-title=\"efaq-poster-session\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  POSTER SESSION\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426617\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>2:45 PM Session Introduction &middot; Chair: Vincent Goiffon (ISAE-SUPAERO) &middot; 2:50\u20134:50 PM<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"18\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426618\" href=\"#\" data-title=\"efaq-pa-1-soc-processor-and-memory-proton-testing-methodology-and-results-for-the-amd-versal-acap\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PA-1: SoC Processor and Memory Proton Testing Methodology and Results for the AMD Versal ACAP\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426618\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>G. Smith1, M. Wirthlin1, M. Brigham1<\/strong><\/p>\n<p>1. Brigham Young University, USA<\/p>\n<p>A methodology is presented for testing multiple processors and 18 memories simultaneously on the Versal ACAP during a proton irradiation test. Post-run fault analysis is performed to identify the root cause of all processor failures.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"19\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426619\" href=\"#\" data-title=\"efaq-pa-2-impact-of-structural-and-numerical-constraints-on-single-event-upsets-in-resnet50-neural-networks\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PA-2: Impact of Structural and Numerical Constraints on Single-Event Upsets in ResNet50 Neural Networks\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426619\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>G. Qiao1, S. Feng1, G. Yu1, M. Tao2, Y. Chi1, J. Chen1, D. Luo1, J. Yang2, B. Liang1<\/strong><\/p>\n<p>1. National University of Defense Technology, China &nbsp; 2. Hunan University, China<\/p>\n<p>Using software fault injection and pulsed laser experiments, this work analyzes ResNet50 failure behaviors under radiation, showing that combined structural and numerical constraints significantly enhance model robustness on AI chip.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"20\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426620\" href=\"#\" data-title=\"efaq-pa-3-heavy-ion-testing-of-the-amd-versal-network-on-chip\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PA-3: Heavy-Ion Testing of the AMD Versal Network-on-Chip\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426620\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>P. Drum1, A. George1, M. Cannon2, A. Kumar2, N. Myers2, A. Tabaczynski2, D. Lee2, N. Matter2, P. Thelen2<\/strong><\/p>\n<p>1. University of Pittsburgh, USA &nbsp; 2. Sandia National Laboratories, USA<\/p>\n<p>Heavy-ion tests were performed on the Versal Network-on-Chip to determine cross sections and common errors for two general-use designs. Common errors included correctable parity errors and packet misrouting errors.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"21\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426621\" href=\"#\" data-title=\"efaq-pa-4-proton-radiation-testing-of-ai-models-on-the-amd-versal-deep-learning-processing-unit-dpu\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PA-4: Proton Radiation Testing of AI Models on the AMD Versal Deep Learning Processing Unit (DPU)\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426621\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Brown1, H. Allan1, J. Goeders1, M. Wirthlin1<\/strong><\/p>\n<p>1. Brigham Young University, USA<\/p>\n<p>Fault injection and proton radiation testing of YOLO and ResNet models on the AMD Versal DPU reveal six failure modes, model-dependent error rates, and the predictive capability of fault injection<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"22\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426622\" href=\"#\" data-title=\"efaq-pa-5-evaluation-of-single-event-effects-on-swin-transformer-tracking-model-for-sub-20nm-finfet-based-ai-chips\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PA-5: Evaluation of Single-Event Effects on Swin Transformer Tracking Model for Sub-20nm FinFET-based AI Chips\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426622\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>Z. Li1, S. Feng1, G. Yu1, M. Tao2, Y. Chi1, J. Chen1, D. Luo1, J. Yang2, Y. Liu1, F. Luo1, J. Mo1, B. Liang1<\/strong><\/p>\n<p>1. National University of Defense Technology, China &nbsp; 2. Hunan University, China<\/p>\n<p>Pulsed laser and heavy-ion experiments are conducted on a Swin-Transformer-based edge tracking system. Different structural variants exhibit distinct SEFI\/SEU occurrence characteristics, revealing structure-dependent reliability behaviors under radiation- induced single-event effects. \u2013 BREAK SESSION B SINGLE-EVENT EFFECTS: Devices and Integrated Circuits SESSION INTRODUCTION Chair: Ruben Garc\u00eda Al\u00eda (CERN)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"23\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426623\" href=\"#\" data-title=\"efaq-pb-1-microdose-induced-stuck-bits-in-7-nm-finfet-srams\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PB-1: Microdose-Induced Stuck Bits in 7-nm FinFET SRAMs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426623\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Gorbunov1, E. Timokhin1, J. Weijers1, M. Van de Burgwal1, L. Berti1, G. Thys1, T. Vervecken2, D. Van Nuffel2, T. Schulte2, J. Vanden Berk2, D. Geys2, S. Bounasser3, B. Glass3<\/strong><\/p>\n<p>1. IMEC, Belgium &nbsp; 2. Magics Technologies NV, Belgium &nbsp; 3. ESA, Netherlands<\/p>\n<p>During the heavy-ion test campaign, we observed stuck bits in 7-nm FinFET SRAM blocks with certain bitcell types. The analysis and simulation results indicated that the microdose is the primary mechanism at typical fluence levels.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"24\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426624\" href=\"#\" data-title=\"efaq-pb-2-characterization-of-spatial-variability-of-single-event-latch-up-in-a-14-nm-finfet-technology\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PB-2: Characterization of Spatial Variability of Single-Event Latch-up in a 14-nm FinFET Technology\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426624\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Zhao1, X. Li1, D. Zhang1, B. Li1, R. Tang1, Y. Gao1, C. Yang1, P. Lu2, L. Shu1, J. Bu1, J. Gao1<\/strong><\/p>\n<p>1. Institute of Microelectronics of the Chinese Academy of Sciences, China &nbsp; 2. Ocean University of China, China<\/p>\n<p>The significant spatial heterogeneity of SEL characteristics is revealed in a 14-nm FinFET multi-core SoC through heavy-ion and pulsed-laser experiments. A differentiated hardening strategy linking sensitivity to body-tie distance is proposed to provide design guidance.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"25\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426625\" href=\"#\" data-title=\"efaq-pb-3-effects-of-electrical-program-erase-cycling-on-the-single-event-response-of-65-nm-sonos-charge-trap-nor-flash-memory\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PB-3: Effects of Electrical Program\/Erase Cycling on the Single-Event Response of 65-nm SONOS Charge-Trap NOR Flash Memory\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426625\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Hubbard1, A. Murali2, H. Hunnicutt1, T. Peyton1, B. Ray2, A. Ildefonso1, D. Loveless1<\/strong><\/p>\n<p>1. Indiana University Bloomington, USA &nbsp; 2. Colorado State University, USA<\/p>\n<p>Heavy\u2011ion testing on 65\u2011nm MirrorBit SONOS Charge-Trap NOR flash memory showed that program\/erase\u2011cycled sectors exhibit significantly lower bit\u2011normalized SEU cross- sections compared to single\u2011programmed sectors.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"26\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426626\" href=\"#\" data-title=\"efaq-pb-4-mechanism-study-of-heavy-ion-sees-in-a-12-bit-sar-adc-in-22-nm-fd-soi\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PB-4: Mechanism Study of Heavy-Ion SEEs in a 12-bit SAR ADC in 22-nm FD-SOI\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426626\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Zhao1, Z. Li1,2, Q. Ma1, Y. Qing1, M. Gorbunov2, M. Zhang1, E. Tackx1, J. Prinzie1, P. Leroux1<\/strong><\/p>\n<p>1. KU Leuven, Belgium &nbsp; 2. IMEC, Belgium<\/p>\n<p>22-nm FD-SOI SAR ADC heavy-ion tests reveal outliers at LET 27.5\u201360.2. Errors map to sampling, control, comparator, and flip-flop SEEs. As cross-section rises, signatures migrate from single-mechanism to arbitrary multi-bit and mixed-mechanism errors<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"27\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426627\" href=\"#\" data-title=\"efaq-pb-5-reliability-of-image-classification-and-object-detection-on-embedded-systolic-arrays\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PB-5: Reliability of Image Classification and Object Detection on Embedded Systolic Arrays\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426627\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>P. Foletto Pimenta1, S. Savazzi2, E. Verroi3, M. Pullia2, F. Santos4, P. Rech1<\/strong><\/p>\n<p>1. University of Trento, Italy &nbsp; 2. Centro Nazionale di Adroterapia Oncologica, Italy &nbsp; 3. Trento Institute for Fundamental Physics and Applications, Italy &nbsp; 4. INRIA, France<\/p>\n<p>We investigate the impact of 200 MeV protons on convolutions and prediction tasks executed on Tensor Processing Units. Kernel size does not impact output correctness while detection shows significantly more critical errors than classification.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"28\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426628\" href=\"#\" data-title=\"efaq-pb-6-characterization-of-latent-gate-damage-and-single-event-leakage-current-by-gate-charge-measurements-of-irradiated-silicon-carbide-power-mosfets\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PB-6: Characterization of Latent Gate Damage and Single-Event Leakage Current by Gate Charge Measurements of Irradiated Silicon Carbide Power MOSFETs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426628\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Sengupta1,2, R. Cadena2, J. Vielmette2, S. Islam2, X. Zhao3, D. Bal2, A. Sternberg2, J. Osheroff4, J. Hutson5, M. Alles2, K. Galloway2, A. Witulski2, R. Schrimpf2, S. Kosier2<\/strong><\/p>\n<p>1. DLR, Germany &nbsp; 2. Vanderbilt University, USA &nbsp; 3. Duke University, USA &nbsp; 4. NASA Goddard Space Flight Center, USA &nbsp; 5. Lipscomb University, USA<\/p>\n<p>Gate charge measurements reveal that latent gate damage and drain-gate single-event leakage current in SiC MOSFETs are strongly dependent on the particle energy and drain bias during irradiation and are precursors to single-event gate rupture. \u2013 LUNCH in PRCC Level 1 \u2013 Exhibit Hall A and Young Professionals (YP) LUNCHEON at the Sheraton Hotel SESSION C Photonics Devices and Integrated Circuits SESSION INTRODUCTION Chair: Julien Mekki (CNES)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"29\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426629\" href=\"#\" data-title=\"efaq-pc-1-total-ionizing-dose-effects-on-the-dark-count-rate-in-110-nm-cmos-spads\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PC-1: Total Ionizing Dose Effects on the Dark Count Rate in 110 nm CMOS SPADs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426629\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>L. Ratti1, A. Burdyko2, M. Campajola3, G. Collazuol4, M. Da rocha rolo5, D. Falchieri6, G.<\/strong><\/p>\n<p>Fiorillo3, T. Floris1, F. Licciulli7, M. Mazziotta7, L. Pancheri8, L. Rignanese6, R. Santoro2, F. Shojaei1, C. Vacchi1 1. Universit\u00e0 degli Studi di Pavia and INFN Pavia, Italy 2. Universit\u00e0 degli Studi dell\u2019Insubria and INFN Milano, Italy 3. Universit\u00e0 degli Studi di Napoli Federico II and INFN Napoli, Italy 4. Universit\u00e0 degli Studi di Padova and INFN Padova, Italy 5. INFN Torino, Italy 6. INFN Bologna, Italy 7. INFN Bari, Italy 8. Universit\u00e0 degli Studi di Trento and INFN TIFPA, Italy SPADs fabricated in a 110 nm CMOS technology, with different active areas and quenching features, are irradiated with 10 keV X-rays up to a total ionizing dose of 10 Mrad(SiO2). Effects on DCR are investigated.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"30\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426630\" href=\"#\" data-title=\"efaq-pc-2-effects-of-annealing-on-ga-free-t2sl-infrared-detector\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PC-2: Effects of annealing on Ga-Free T2SL Infrared Detector\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426630\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>H. Mezouar1, A. Michez2, M. Tornay3, C. Cervera4, P. Christol3<\/strong><\/p>\n<p>1. University of Montpellier, France &nbsp; 2. DELPHEA, France &nbsp; 3. University Of Montpellier, France &nbsp; 4. University of Grenobles-Alpes and CEA-LETI, France<\/p>\n<p>In this paper, we investigate the effect of thermal annealing on Ga-free InAs\/InAsSb type- II superlattice (T2SL) midwave infrared barrier photodetectors irradiated with 60 MeV protons at fluences up to 8x1011 H+\/cm\u00b2.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"31\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426631\" href=\"#\" data-title=\"efaq-pc-3-radiation-induced-charge-collection-dynamics-in-short-wavelength-p-n-silicon-avalanche-photodiodes\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PC-3: Radiation-Induced Charge Collection Dynamics in Short-Wavelength P+-N Silicon Avalanche Photodiodes\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426631\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>N. Karom1, S. Ball1, E. Teo1, A. Veluri1, P. Harris1, M. Mccurdy1, R. Schrimpf1, D.<\/strong><\/p>\n<p>Fleetwood1, J. Trippe1, R. Nederlander2, R. Reed1, S. Weiss1 1. Vanderbilt University, USA 2. Aegis Aerospace, USA P+-N Si-APDs show significant gain decrease under alpha irradiation compared to optical excitation. Data analysis and TCAD simulations show this results from significant increases in carrier recombination relative to avalanche generation with increasing EHP density.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"32\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426632\" href=\"#\" data-title=\"efaq-pc-4-total-ionizing-dose-effects-on-high-speed-silicon-integrated-photonic-mach-zehnder-modulators\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PC-4: Total Ionizing Dose Effects on High-Speed Silicon Integrated Photonic Mach-Zehnder Modulators\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426632\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>K. Arnold1, N. Karom1, J. Slaby2, A. Veluri1, A. Kaylor2, A. Sternberg1, D. Ball1, R. Schrimpf1, D. Fleetwood1, S. Ralph2, R. Reed1, S. Weiss1<\/strong><\/p>\n<p>1. Vanderbilt University, USA &nbsp; 2. Georgia Institute of Technology, USA<\/p>\n<p>Impacts of 10-keV X-ray irradiation on high-speed electro-optic response are observed in silicon Mach-Zehnder modulators. More than 50% electro-optic performance degradation is observed when devices are irradiated under active bias. Underlying ionization mechanisms are examined. The History of Puerto Rico and San Juan \u2013 INVITED SPEAKER SESSION D Radiation Effects in Devices and Integrated Circuits SESSION INTRODUCTION Chair: Corinna Martinella (University of Montpellier)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"33\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426633\" href=\"#\" data-title=\"efaq-pd-1-understanding-radiation-induced-accuracy-loss-in-floating-gate-based-analog-artificial-neural-networks\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PD-1: Understanding Radiation-Induced Accuracy Loss in Floating-Gate Based Analog Artificial Neural Networks\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426633\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>N. Afroz1, A. Sayem1, A. Dwadasi1, R. Baumann1, Y. Makris2<\/strong><\/p>\n<p>1. University of Texas at Dallas, USA &nbsp; 2. University of California, USA<\/p>\n<p>We investigate how total ionizing dose-induced charge loss in analog floating-gates affects the inference accuracy of Analog Artificial Neural Networks (AANNs) and demonstrate how periodic hot-electron reprogramming can restore performance, effectively mitigating radiation-induced degradation.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"34\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426634\" href=\"#\" data-title=\"efaq-pd-2-radiation-threshold-of-scaled-isotopically-pure-mos2-nanoribbon-field-effect-transistors\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PD-2: Radiation Threshold of Scaled Isotopically Pure MoS2 Nanoribbon Field-Effect Transistors\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426634\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Yang1, T. Pena2, A. Wright1, J. Chaney1, A. Hoang2, A. Mannix2, E. Pop2, D. Daniel1, J. Taggart1, S. Stuart1, A. Bushmaker1<\/strong><\/p>\n<p>1. The Aerospace Corporation, USA &nbsp; 2. Stanford University, USA<\/p>\n<p>We investigate the effects of gamma radiation on scaled monolayer molybdenum disulfide (MoS2) nanoribbon field-effect transistors. At 1 Mrad TID, threshold voltage degradation occurred while field-effect mobility remained constant, indicating gate dielectric limits radiation hardness.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"35\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426635\" href=\"#\" data-title=\"efaq-pd-3-capacitance-shifts-in-multilayer-ceramic-capacitors-induced-by-gamma-irradiation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PD-3: Capacitance Shifts in Multilayer Ceramic Capacitors Induced by Gamma Irradiation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426635\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>P. Muscat1, H. Barnaby1, G. Rodarte1, C. Nies2, M. Conway3, D. West2, H. Hairston2, J. Neuendank1, Z. Adamany1<\/strong><\/p>\n<p>1. Arizona State University, USA &nbsp; 2. KYOCERA AVX, USA &nbsp; 3. KYOCERA AVX, United Kingdom<\/p>\n<p>Total ionizing dose effects on capacitance were evaluated for X7R and C0G\/NP0 multilayer ceramic capacitors using Co-60 gamma irradiation. X7R devices showed monotonic dose-dependent capacitance reduction, while C0G\/NP0 capacitors remained stable.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"36\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426636\" href=\"#\" data-title=\"efaq-pd-4-effects-of-x-ray-radiation-on-the-performance-of-lithium-niobate-mems-resonators\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PD-4: Effects of X-Ray Radiation on the Performance of Lithium Niobate MEMS Resonators\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426636\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Vivas Gomez1, H. Parra1, E. Zhang1, J. Lee1, R. Abdolvand1<\/strong><\/p>\n<p>1. University of Central Florida, USA<\/p>\n<p>X-ray total ionizing dose effects were investigated in resonant LiNbO3 TPoS MEMS. After radiation, resonant frequency shifts remained below 0.06%, while bounded, partially recoverable degradation in Q, keff\u00b2, motional resistance, and insertion loss are observed.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"37\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426637\" href=\"#\" data-title=\"efaq-pd-5-radio-frequency-injection-effects-on-electronic-devices-subject-to-neutron-displacement-damage\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PD-5: Radio Frequency Injection Effects on Electronic Devices Subject to Neutron Displacement Damage\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426637\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>N. Crenshaw1,2, J. Young1, J. Wallace1, I. Timmins1, L. Musson1, W. Charlton2<\/strong><\/p>\n<p>1. Sandia National Laboratories, USA &nbsp; 2. University of Texas at Austin, USA<\/p>\n<p>Linear bipolar transistors, differential amplifiers, and operational amplifiers were exposed to individual and combined neutron and electromagnetic environments. Neutron displacement damage was observed to modify device and circuit response to injected RF noise.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"38\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426638\" href=\"#\" data-title=\"efaq-pd-6-ring-oscillator-based-methodology-for-degradation-parameter-extraction-after-tid-irradiations\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PD-6: Ring-Oscillator-Based Methodology for Degradation Parameter Extraction After TID Irradiations\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426638\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>X. Zhao1, J. Kronenberg1, S. Tolson1, N. Pieper1, Y. Xiong1, B. Bhuva1<\/strong><\/p>\n<p>1. Vanderbilt University, USA<\/p>\n<p>Different RO designs are used to determine effective degradations in NMOS and PMOS currents after TID exposures in a 3-nm bulk FinFET technology, revealing effects of irradiation bias and circuit activity that influence degradation levels. SESSION E Environments, Facilities, and Dosimetry SESSION INTRODUCTION Chair: Cornelia Hoehr (TRIUMF)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"39\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426639\" href=\"#\" data-title=\"efaq-pe-1-real-time-monitoring-of-the-charm-mixed-field-irradiation-with-optical-fiber-dosimeters\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PE-1: Real-time Monitoring of the CHARM Mixed Field Irradiation with Optical Fiber Dosimeters\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426639\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>L. Weninger1, S. Acid1,2, Y. Aguiar3, R. Garcia3, N. Kerboub2, S. Fiore3, D. Prelipcean3, A. Morana1, S. Girard1<\/strong><\/p>\n<p>1. Universit\u00e9 de Saint Etienne, France &nbsp; 2. CNES, France &nbsp; 3. CERN, Switzerland<\/p>\n<p>We propose a novel approach to adapt optical-fiber based dosimeters based on the radiation-induced luminescence (RIL) phenomenon to the pulsed (spill-based time structure) mixed-field environment of the CHARM facility at CERN.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"40\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426640\" href=\"#\" data-title=\"efaq-pe-2-very-high-energy-heavy-ion-see-testing-results-at-the-heartscern-facility-during-the-2025-run\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PE-2: Very High-Energy Heavy-Ion SEE Testing Results at the HEARTS@CERN Facility During the 2025 Run\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426640\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>B. Tissot Ferraz1, T. Beene1, D. S\u00f6derstr\u00f6m1, I. Slipukhin1, R. Garcia1, N. Emriskova1, A. Waets1, Y. Aguiar1, D. Prelipcean1, C. Matteo1, M. Garcia1, D. Lucsanyi1, R. Federico1, G. Pezzullo1, G. Kucharska1, E. Garcia1, J. McCarthy1, M. Delrieux1<\/strong><\/p>\n<p>1. CERN, Switzerland<\/p>\n<p>The paper presents the results of Single-Event-Effect testing of commercial electronic devices with very high-energy heavy ions at the HEARTS@CERN facility during the 2025 run, along with the beam characterization and the adopted dosimetry practices.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"41\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426641\" href=\"#\" data-title=\"efaq-pe-3-evaluating-3-d-nand-as-a-passive-radiation-dosimeter-a-comparison-of-fg-and-ct-technology\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PE-3: Evaluating 3-D NAND as a Passive Radiation Dosimeter: A Comparison of FG and CT Technology\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426641\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Kumar1, J. Bell1, A. Brandl1, B. Ray1<\/strong><\/p>\n<p>1. Colorado State University, USA<\/p>\n<p>This work experimentally investigates 3-D floating-gate and charge-trap NAND flash as passive radiation dosimeters, showing linear FG sensitivity of ~12.5 mV\/krad(Si), while CT exhibits multi-mechanism, non-linear response with ~35 mV\/krad(Si) initially, reducing to ~18 mV\/krad(Si).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"42\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426642\" href=\"#\" data-title=\"efaq-pe-4-operational-time-resolved-single-event-upset-rate-estimation-from-on-board-particle-flux-measurements\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PE-4: Operational Time-Resolved Single-Event Upset Rate Estimation from On-Board Particle Flux Measurements\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426642\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Koziukov1, G. Protopopov1, M. Kozhukhov1, I. Gvozdev1<\/strong><\/p>\n<p>1. RH-Forecast LLC, Russian Federation<\/p>\n<p>This paper presents a time-resolved, measurement-driven approach to estimate SEU rates in spacecraft memories during SPEs by reconstructing particle spectra from GOES-16 and ACE flux measurements. The method is validated against in-flight upset-count data from RHEME-3.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"43\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426643\" href=\"#\" data-title=\"efaq-pe-5-investigation-of-the-energy-dependent-response-of-si-igbt-and-sic-power-mosfets-to-fast-neutrons\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PE-5: Investigation of the Energy-Dependent Response of Si IGBT and SiC Power MOSFETs to Fast Neutrons\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426643\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>C. Cazzaniga1, F. Principato2, F. Pintacuda3, X. Ledoux4, M. Kastriotou1, C. Frost1<\/strong><\/p>\n<p>1. STFC, United Kingdom &nbsp; 2. Palermo University, Italy &nbsp; 3. STMicroelectronics, Italy &nbsp; 4. GANIL, France<\/p>\n<p>Silicon IGBT and silicon carbide power MOSFETs have been studied with fast neutrons in the 2-40 MeV range at GANIL SPIRAL-2 where energy selection is possible. The results can be compared with atmospheric neutron tests. POSTER SESSION SESSION INTRODUCTION Chair: Vincent Goiffon (ISAE-SUPAERO) \u2013 POSTER SESSION Project with local young students from Puerto Rico The Puerto Rico STEM education program has been working with Space R3 LLC to develop a series of microelectronics- based projects for high school students (ages 15\u201318). Participating students are from University Gardens High School and Papa Juan XXIII High School, both located in San Juan, Puerto Rico. These projects span multiple disciplines, including mathematics, science, and engineering, with a strong emphasis on radiation effects in microelectronics. The program has run for approximately one academic year, beginning in September 2025 and concluding at the NSREC 2026 Conference. During this time, students and their teachers designed, built, and tested a variety of microelectronic systems. Guest speakers included Nicole Pothier McGillivray (Carrington Shield Strategies, LLC), Ricardo De Jesus (Raytheon), Lea Ann Smith (Radiation Test Solutions, Inc.), Nicholas Christian (Radiation Test Solutions, Inc.), and Melanie Berg (Space R3 LLC). Industry partners generously donated access to radiation testing facilities and shared their expertise. ProNova Solutions, LLC provided proton testing, VPT Rad, Inc. provided total ionizing dose (TID) testing, and Radiation Test Solutions, Inc. (RTS) provided neutron testing. The IEEE Nuclear and Plasma Sciences Society (NPSS) also provided generous financial support. Data acquisition was performed by Space R3 LLC in collaboration with Natch Le\u00f3n of Papa Juan XXIII High School. Three engineering students were selected to travel to the TID facility and participate in testing, while mathematics students received the resulting data and performed the analysis. The results will be presented by the students during a poster session at the NSREC 2026 Conference. NSREC 2026 has decided to reserve a dedicated spot in its POSTER SESSION for the STEM-PR students to present their work to the community. Please visit these Posters and discuss the results with our youngest colleagues! PUERTO RICO CONVENTION CENTER SESSION F Basic Mechanisms of Radiation Effects SESSION INTRODUCTION Chair: Marta Bagatin (University of Padova)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"44\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426644\" href=\"#\" data-title=\"efaq-pf-1-dose-enhancement-effects-in-nanometer-scale-technologies\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PF-1: Dose Enhancement Effects in Nanometer-Scale Technologies\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426644\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>E. Wong1, B. Dodd1, C. Champagne1, D. Ball1, S. Kosier1, M. Hu1, R. Reed1, B. Sierawski1, D. Fleetwood1, R. Schrimpf1, J. Trippe1<\/strong><\/p>\n<p>1. Vanderbilt University, USA<\/p>\n<p>Dose enhancement in nanometer-scale devices is quantified via Monte Carlo radiation- transport simulations of 22-nm FDSOI devices. Results are calibrated and compared via comparison with experimental data on structures having high-Z gate stacks.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"45\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426645\" href=\"#\" data-title=\"efaq-pf-2-electric-field-dependence-of-x-ray-tid-induced-instabilities-in-enhancement-mode-gan-hemts\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PF-2: Electric-Field-Dependence of X-Ray TID-Induced Instabilities in Enhancement-Mode GaN HEMTs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426645\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Billa1, S. Shorina1, P. Maloney1, J. Debnath1, H. Parra1, B. Bolton1, E. Zhang1<\/strong><\/p>\n<p>1. University of Central Florida, USA<\/p>\n<p>X-ray total ionizing dose effects in enhancement-mode GaN HEMTs are examined under different post-irradiation electric fields. Threshold-voltage shifts and recovery depend strongly on bias history, with TCAD simulations linking field distribution to charge trapping stability.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"46\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426646\" href=\"#\" data-title=\"efaq-pf-3-electrically-detected-magnetic-resonance-and-near-zero-field-magnetoresistance-study-of-heavy-ion-irradiation-in-gan-pn-junction-diodes\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PF-3: Electrically detected magnetic resonance and near zero field magnetoresistance study of heavy ion irradiation in GaN pn junction diodes\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426646\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>D. Hassenmayer1, M. Elko1, P. Lenahan1<\/strong><\/p>\n<p>1. Penn State University, USA<\/p>\n<p>Electrically detected magnetic resonance (EDMR) and near zero field magnetoresistance (NZFMR) measurements were utilized to detect atomic scale defects generated by heavy ion irradiation of GaN pn junction diodes at room temperature.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"47\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426647\" href=\"#\" data-title=\"efaq-pf-4-degradation-mechanisms-and-radiation-induced-material-modifications-in-sic-power-diodes\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PF-4: Degradation mechanisms and radiation-induced material modifications in SiC power diodes\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426647\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>H. Goncalves de Medeiros1, N. F\u00fcr1, A. Erlebach1, M. Belanche1, J. Reuteler1, K. Voss2, U. Grossner1<\/strong><\/p>\n<p>1. ETH Zurich, Switzerland &nbsp; 2. GSI, Switzerland<\/p>\n<p>SELC and SEB degradation and their mechanisms in SiC power diodes are investigated through post-irradiation characterization with EDX, Ultraviolet-Visible Photoluminescence (UVPL), and Raman Spectroscopy. 3D-TCAD is employed to put the findings into perspective.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"48\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426648\" href=\"#\" data-title=\"efaq-pf-5-onset-of-degradation-in-cots-sic-power-diodes-exposed-to-high-energy-proton-irradiation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PF-5: Onset of Degradation in COTS SiC Power Diodes Exposed to High-Energy Proton Irradiation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426648\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>N. F\u00fcr1, H. Goncalves de Medeiros1, M. Nagel1, M. Kirchbaumer1, M. Belanche Guadas1, R. Kupper1, U. Grossner1<\/strong><\/p>\n<p>1. ETH Z\u00fcrich, Switzerland<\/p>\n<p>Based on high-energy (200 MeV) proton irradiation on COTS SiC power diodes, the impact of displacement-induced defect activation in radiation-induced damage and, in consequence, the limitations of standard derating practices are discussed.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"49\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426649\" href=\"#\" data-title=\"efaq-pf-6-investigation-on-mechanism-of-total-ionizing-dose-effects-in-tin-oxide-field-effect-transistors-by-gamma-ray-irradiation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PF-6: Investigation on Mechanism of Total Ionizing Dose Effects in Tin Oxide Field-Effect Transistors by Gamma-ray Irradiation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426649\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Kim1, H. Kim2, G. Jeon1, Y. Hwang1, R. Chung2, D. Kim1<\/strong><\/p>\n<p>1. Korea Atomic Energy Research Institute, Korea &nbsp; 2. Kyungpook National University, Korea<\/p>\n<p>Total ionizing dose effects in SnO2 FETs were investigated using Co-60 gamma irradiation. The results revealed the dose-dependent correlation between pre-existing oxygen vacancies and radiation-induced electron-hole pairs, relating to the degradation of device performance.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"50\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426650\" href=\"#\" data-title=\"efaq-pf-7-field-assisted-charge-detrapping-and-gain-recovering-in-a-standard-npn-bipolar-transistor-i-lopez-calle1-1-european-space-agency-esa-netherlands-an-intense-electric-field-applied-be\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PF-7: Field\u2011Assisted Charge Detrapping and Gain Recovering in a Standard NPN Bipolar Transistor I. Lopez Calle1 1. European Space Agency (ESA), Netherlands An intense electric field applied between collector and emitter accelerates charge detrapping and enables instantaneous gain recovery in irradiated bipolar COTS transistors. This approach supports hardness\u2011assurance methodologies and rapid in\u2011situ mitigation of bipolar COTS components. 10:05 \u2013 BREAK SESSION G Hardness Assurance: Piece Parts to Systems and Testing Approaches SESSION INTRODUCTION Chair: Almudena Lindoso (University Carlos III Madrid)\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426650\" data-parent=\"#sp-ea-4266\">\n\t\t\t<div class=\"ea-body animated normal\"> No Content <\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"51\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426651\" href=\"#\" data-title=\"efaq-pg-1-variability-analysis-of-tid-induced-failure-in-a-complex-microcontroller\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PG-1: Variability Analysis of TID-Induced Failure in a Complex Microcontroller\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426651\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>I. Hudson1, H. Hunnicutt1, D. Loveless1<\/strong><\/p>\n<p>1. Indiana University, USA<\/p>\n<p>Inter-device variability in TID-induced functional failure was observed across forty-six MSP430FR6989 microcontroller units. A combination of programmable bias and the internal VLO oscillator\u2019s baseline behavior is shown to be predictive of the failure dose. Benchtop Emulation of System-Level Analog Single-Event Transients from Piece-Part PG-2 Data M. McKinney1, C. James1, T. Peyton1, H. Hunnicutt1, D. Loveless1 1. Indiana University, USA A board-level ASET emulation methodology is demonstrated by comparing heavy-ion\u2013 induced transients in a linear voltage regulator with emulated responses derived from measured piece-part SETs, enabling system verification with reduced radiation testing.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"52\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426652\" href=\"#\" data-title=\"efaq-pg-3-electron-pulses-generated-by-compact-laser-plasma-accelerators-as-surrogates-for-heavy-ions-in-single-event-effect-testing\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PG-3: Electron Pulses Generated by Compact Laser-Plasma Accelerators as Surrogates for Heavy Ions in Single Event Effect Testing\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426652\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Hu1, J. Trippe1, D. Ball1, A. Sternberg1, B. Sierawski1, M. Solt2, J. Thieman2, S. Schroeder3, J. Van Tilborg3, J. Matson2, J. Warner2, B. Dorney2, R. Jacob3, C. Berger3, B. Greenwood3, S. Barber3, R. Reed1, D. Fleetwood1, S. Wolin2, K. Nagamatsu2, M. McLain2<\/strong><\/p>\n<p>1. Vanderbilt University, USA &nbsp; 2. Northrop Grumman, USA &nbsp; 3. Lawrence Berkeley National Laboratory, USA<\/p>\n<p>Laser-plasma accelerated electron bunches are investigated as surrogates for heavy ion testing of single event effects in microelectronics. Experimental data and high-fidelity simulations show that microelectronic responses to electron bunches can mimic heavy ions.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"53\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426653\" href=\"#\" data-title=\"efaq-pg-4-augmenting-pulsed-laser-latchup-screening-process-with-sel-historical-data-model\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PG-4: Augmenting Pulsed-Laser Latchup Screening Process with SEL Historical Data Model\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426653\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Warner1, S. Messenger1, B. Song1, J. Rodriguez1<\/strong><\/p>\n<p>1. Northrop Grumman, USA<\/p>\n<p>Pulsed-laser screening was performed on commercial CMOS devices to estimate the latchup cross-section vs LET curve and historical heavy ion data is used to bound SEL risk. \u2013 BREAK TERRACE SESSION H Hardening by Design SESSION INTRODUCTION Chair: Nathan Nowlin (Sandia National Laboratories)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"54\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426654\" href=\"#\" data-title=\"efaq-ph-1-investigating-flux-dependent-fault-masking-and-recoverability-in-a-mixed-signal-soc-via-spatial-and-temporal-gating\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PH-1: Investigating Flux Dependent Fault Masking and Recoverability in a Mixed-Signal SoC via Spatial and Temporal Gating\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426654\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Dwadasi1, R. Rodriguez-Davila1, M. Pate2, T. Nikoubin1, R. Baumann1<\/strong><\/p>\n<p>1. University of Texas at Dallas, USA &nbsp; 2. Texas Instruments, USA<\/p>\n<p>Flux dependent fault masking in a TI F28377D-SEP microcontroller is investigated using a high-speed shutter and 3-D printed physical masks, showing how temporal and spatial gating can expose hidden unrecoverable faults during accelerated SEE testing.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"55\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426655\" href=\"#\" data-title=\"efaq-ph-2-evaluation-of-single-event-upset-effects-on-vgg-neural-networks-under-model-lightweighting-and-algorithm-level-hardening\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  PH-2: Evaluation of single-event upset effects on VGG neural networks under model lightweighting and algorithm-level hardening\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426655\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>N. Yingqiang1, T. Ming2, Y. Guofang1, C. Yaqing1, C. Jianjun1, L. Deng1, Y. Jiaofen2, L. Bin1<\/strong><\/p>\n<p>1. National University of Defense Technology, China &nbsp; 2. Hunan University, China<\/p>\n<p>This paper investigates SEU robustness of lightweight VGG networks using ReLU_max and L1-based algorithm-level hardening, evaluated via fault injection, heavy-ion, and laser experiments on sub-20 nm FinFET AI chips, revealing compression-dependent hardening effectiveness. CLOSING REMARKS RESG NEWS The purposes of the Radiation Effects Committee (REC) of the IEEE Nuclear and Plasma Sciences Society are to advance the theory and application of radiation effects and its allied sciences, to disseminate information pertaining to those fields, and to maintain high scientific and technical standards among its members. The Committee aids in promoting close cooperation and the exchange of technical information among its members. This goal is met by running conferences for the presentation and discussion of original contributions, assisting in the publication of technical papers on radiation effects in the IEEE Transactions on Nuclear Science (TNS), coordinating development of radiation effects measurement definitions and standards within IEEE and other standards organizations, providing a sounding board for radiation effects specialists, providing for the continued professional development and needs of its members, and providing liaisons between IEEE and other technical organizations in the areas of radiation effects. Each year, the REC provides a forum for the technical exchange of information by Kay Chesnut, RTX Executive Chair holding the Nuclear and Space Radiation Effects Conference (NSREC). NSREC is an international forum for presentation of research papers on radiation effects, including effects on electronic and photonic materials, devices, circuits, sensors, systems, semiconductor processing technology, and design techniques for producing radiation- tolerant (hardened) devices and integrated circuits. Papers presented at the NSREC are submitted for possible publication in the Spring issue of the IEEE TNS. NSREC 2026 will be held in San Juan, PR, July 20-24, at the Puerto Rico Convention Center in San Juan Puerto Rico, with the adjoining Sheraton Puerto Rico Resort. Dr. Philippe Paillet, CEA, is the Conference Chair. The 2026 NSREC supporters are Southwest Research Institute, AMD, Renesas, TAU Systems, Northrop Grumman, and Aerospace Corporation. We appreciate our supporters for their significant commitment to the conference. The supporters\u2019 ongoing commitment to NSREC allows us to keep conference registration rates affordable. We welcome other organizations to consider supporting NSREC 2027 in Atlanta, GA. Heather Quinn, Air Force Research Laboratory Executive Vice-Chair Our upcoming NSREC chairs include Jonathan Pellish, IEEE, for 2027, Pascale Gouker, MIT Lincoln Laboratories, for 2028, and Brian Sierawski, Vanderbilt University, for 2029. Papers presented at the 2026 NSREC are eligible for publication in a Spring 2027 issue of the IEEE TNS. Authors must upload their papers prior to the conference for consideration for publication in the TNS Special Issue. Detailed instructions can be found at www.nsrec.com. Keep visiting our web site for author information, paper submission details, exhibitor links, on-line registration, and the latest NSREC information. RESG NEWS All papers accepted for oral or poster presentation in the 2026 technical program will be eligible for publication in a special Spring 2027 issue of the IEEE Transactions on Nuclear Science (TNS), based on separate submission of a complete paper. Each IEEE TNS submitted paper will be subject to the standard full peer review. All papers must be submitted through the IEEE Author Portal. While this is a different site than used for submissions in previous years, the process is similar. Instructions for submitting and reviewing papers can be found under the Publications tab at the Conference website www.nsrec.com. The deadline for submission of TNS papers is July 17, 2026. Data Workshop papers are published in a Workshop Record and are not candidates for publication in the IEEE TNS. The process for the Workshop Record is managed by the Workshop Chair. Dan Fleetwood Vice-Chair of Publications The review process for papers submitted to the TNS is managed by a team of editors. To provide consistent review of papers, this editorial team manages the review process for all radiation effects papers submitted to the TNS throughout the year. The editorial team consists of a senior editor and associate editors who are technically knowledgeable in one or more specializations and are experienced in the publication process. If you would like to serve as a reviewer for the NSREC or RADECS special issues of the TNS, and\/or for radiation effects papers submitted throughout the year, please contact one of the editors. The editors for the 2026 NSREC are: Dan Fleetwood, Senior Editor, Vanderbilt University Email: dan.fleetwood@vanderbilt.edu Heather Quinn, Associate Editor, Air Force Research Laboratory Email: heather.quinn.2@spaceforce.mil Steven Moss, Associate Editor, The Aerospace Corporation, retired Email: scmosshb@aol.com Vincent Goiffon, Associate Editor, ISAE-SUPAERO Email: vincent.goiffon@isae.fr Philippe Paillet, Associate Editor, CEA Email: philippe.paillet@cea.fr Lili Ding, Associate Editor, NINT, China Email: lili03_ding@126.com Daniel Loveless, Associate Editor, Indiana University Email: dlovele@iu.edu Jeffrey Black, Associate Editor, Sandia National Laboratories Email: jefblac@sandia.gov Federico Faccio, Associate Editor, CERN Email: Federico.Faccio@cern.ch Xingji Li, Associate Editor, Harbin Institute of Technology Email: lxj0218@hit.edu.cn Cui Meng, Associate Editor, Zhejiang University Email: mengcui@zju.edu.cn Enxia Zhang, Associate Editor, University of Central Florida Email: enxia.zhang@ucf.edu RESG NEWS ARE Now is the time to join the Institute of Electrical and Electronics Engineers YOU A (IEEE) and the Nuclear Plasma Sciences Society (NPSS). Why? First of all, you\u2019ll MEMBER become a member of the largest professional engineering society in the OF IEEE? world. About 60% of NSREC attendees are IEEE members. The cost of membership in the IEEE depends on your country and your career phase. IEEE members receive access to a broad range of benefits, including a terrific insurance program, on-line access to IEEE publications and reduced rates at all IEEE-sponsored conferences, including, of course, NSREC and the Short Course! NPSS membership is $35 annually. NPSS members receive a free subscription to NPSS News, and a free on-line electronic access via IEEE Xplore to the IEEE Transactions on Nuclear Science (TNS) and the NSREC Data Workshop Records. Members can search and view digital copies of the entire IEEE TNS paper archive from current issues to the first IEEE NSREC in 1964. NPSS members get to vote in our elections, including the election for Junior Member At-Large that is held at the annual open meeting during the conference. Apply for membership at http:\/\/ieee-npss.org\/why-join-npss-and-ieee\/ or visit the IEEE registration desk at the conference. NSREC PUBLICATIONS NSREC has two publications each year: \u25a0 IEEE Transactions on Nuclear Science. This IEEE journal is the official archive of research papers presented at NSREC. Papers presented at the conference undergo an additional submission and peer review before they are accepted for the 2026 special issue. \u25a0 IEEE Radiation Effects Data Workshop Record. Published each year in October, this IEEE proceedings has become the source for radiation test data on semiconductor components. A complimentary copy of the 2026 IEEE Radiation Effects Data Workshop Record and the 2026 special NSREC issue of the IEEE TNS will be available for download to each NSREC technical session attendee if one has opted into inclusion on the attendee list. RADIATION EFFECTS You are invited to attend the IEEE Radiation Effects Committee&#x27;s Annual Open COMMITTEE Meeting on Thursday, July 23, 4:00 pm \u2013 5:30 pm. All conference attendees ANNUAL OPEN are encouraged to attend, including attendees that are not IEEE NPSS members. MEETING A welcome reception for new NPSS members will follow the open meeting. THURSDAY, JULY 2 3 During the open REC meeting we will discuss the current and future \u2013 conferences. Nominations for the 2026 Junior Member-at-Large to the Radiation Effects Steering Group are accepted at the meeting. Voting instructions for IEEE NPSS members will be provided. Join IEEE NPSS and you can vote! AWARDS 2025 OUTSTANDING Gamma-Ray Induced Displacement Damage in Silicon Microvolumes: Single Defect PAPER AWARD Generation Rate and Random Telegraph Signal V. Goiffon, C. Durnez, A. Jay, A. Jouni, V. Karchenkova, A. Antonsanti, V. Lalucaa, D. Lambert, T. Jarrin, A. Salih Alj, R. Monflier, N. Richard, P. Paillet, A. Hemeryck, D. McGrath, and C. Virmontois 2025 MERITORIOUS Pulsed, Focused Electrons as a Surrogate Single-Event Effects Testing Technique PAPER AWARDS (2) G. Tzintzarov, J. W. Teng, A. Kulkarni, A. W. Bushmaker, P. Musumeci, M. D. Looper, D. Daniel, R. Berry, S. Milton, L. D. Edmonds, and G. Allen Ultra-Fast Recovery from TID-Induced Degradation in MOS Transistors via Electrical Rapid Annealing A. I. Vidana, C. G. McKay, N. A. Dodds, D. R. Hughart, P. Oldiges, T. Wallace, J. V. D&#x27;Amico, J. Joffrion, K. R. Sapkota, R. N. Nowlin, and H. J. Barnaby 2025 OUTSTANDING Analysis of Optical and Electrical Single-Event Transients in Integrated Silicon Photonic STUDENT PAPER AWARD Micro-Ring Modulators B. L. Ringel, J. W. Teng, P. J. Francis, M. Hosseinzadeh, D. G. Sam, J. H. Shin, Z. R. Brumbach, C. R. Snyder, A. Ildefonso, A. Khachatrian, D. McMorrow, J. M. Hales, T. Crane, G. N. Tzintzarov, and J. D. Cressler 2025 OUTSTANDING CHALICE: Calculator for Highly Accurate Laser-Induced Carrier Excitation DATA WORKSHOP A. Ildefonso, J. M. Hales, T. Crane, and D. McMorrow PRESENTATION AWARDS 2026 RADIATION The winners of the 2026 Radiation Effects and 2026 Radiation Effects Early Achievement EFFECTS AWARDS Awards will be announced Tuesday, July 21, at the conference opening. The purpose of the Radiation Effects Award is to recognize individuals who have had a sustained history of outstanding and innovative technical and\/or leadership contributions to the radiation effects community. The purpose of the Radiation Effects Early Achievement Award is to recognize an individual within the first ten years of beginning his or her career whose technical contributions and leadership have had a significant impact on the field of radiation effects. 2027 RADIATION Nominations are currently being accepted for the 2027 IEEE Nuclear and Plasma Sciences EFFECTS AWARD Society (NPSS) Radiation Effects Award. The basis of the award is for individuals who have: (1) a substantial, long-term history of technical contributions that have had major impact on the radiation effects community. Examples include benchmark work that initiated major research and development activities or a major body of work that provided a solution to a widely recognized problem in radiation effects; and\/or (2) a demonstrated long-term history of outstanding and innovative leadership contributions in support of the radiation effects community. Examples include initiation or development of innovative approaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the professional development of the members of the radiation effects community. Nominations are currently being accepted for the 2027 Radiation Effects Early Achievement Award. The basis of the award is for individuals whose technical contributions and leadership during the first ten years of the recipient\u2019s career that have had a major impact on the Radiation Effects Community. Examples include work that provides a solution to important technical problems in radiation effects or work that identifies significant new issues in the field. Other factors are cumulative research contributions over the first part of the career, internationally recognized leadership, and mentorship. It is the intent of the RESG to give special consideration for this award to members of the community who are IEEE\/NPSS members. Monetary awards and plaques will be presented at the NSREC in Atlanta, GA, in July 2027. Nomination forms are available electronically in PDF Format or in Microsoft Word format at http:\/\/ieee-npss.org\/technical-committees\/radiationeffects\/. Forms should be sent to Justin Likar, Member-at-Large, JHUAPL at Justin.Likar@jhuapl.edu<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"56\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426656\" href=\"#\" data-title=\"efaq-evening-conference-dinner\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  Evening | Conference Dinner\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426656\" data-parent=\"#sp-ea-4266\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Dinner with live music and performance at the historic Caribe Hilton.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t<\/div><\/div>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"3\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42473\" href=\"#\" data-title=\"efaq-thursday\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  Thursday\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42473\" data-parent=\"#sp-ea-4247\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<style id=\"ea_dynamic_css4267\">#sp-ea-4267 .spcollapsing{height: 0; 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Chair: Marta Bagatin (University of Padova)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"2\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42672\" href=\"#\" data-title=\"efaq-850-am-f-1-investigation-of-total-ionizing-dose-induced-trap-density-in-12-nm-finfet-technology-using-1-f-noise\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:50 AM | F-1: Investigation of Total Ionizing Dose-Induced Trap Density in 12-nm FinFET Technology Using 1\/f Noise\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42672\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>K. Sapkota1, B. Tierney1, A. Vidana1, B. Dodd1, J. Neuendank1,2, R. Ghimire3, M. Spear3, H. Barnaby2, N. Nowlin1<\/strong><\/p>\n<p>1. Sandia National Laboratories, USA &nbsp; 2. Arizona State University, USA &nbsp; 3. Air Force Research Laboratory, USA<\/p>\n<p>The 1\/f noise level measured in GlobalFoundries 12-nm FinFETs increases with ionizing dose. The TID-induced traps near the silicon-oxide interface are estimated, and their behaviors for different threshold voltages are discussed.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"3\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42673\" href=\"#\" data-title=\"efaq-905-am-f-2-tid-response-comparison-of-two-28-nm-cmos-technology-flavors-hpl-vs-hpc\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:05 AM | F-2: TID Response Comparison of Two 28-nm CMOS Technology Flavors: HPL vs. HPC+\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42673\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>G. Andreetta1, L. Gelmi2, E. Vallicelli3, M. De Matteis3, A. Lai4, A. Paccagnella1, S. Mattiazzo1, S. Bonaldo1 Total ionizing dose (TID) is investigated by X-rays in two 28-nm CMOS technology flavors,<\/strong><\/p>\n<p>1. University of Padova, Italy &nbsp; 2. University of Pavia, Italy &nbsp; 3. University of Milano Bicocca, Italy &nbsp; 4. INFN Cagliari, Italy<\/p>\n<p>HPL and HPC+. Differences in the TID sensitivity are found in short-channel devices.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"4\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42674\" href=\"#\" data-title=\"efaq-920-am-f-3-displacement-damage-mitigation-in-fully-isolated-n-and-p-type-pixel-microvolumes\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:20 AM | F-3: Displacement Damage Mitigation in Fully Isolated N and P-Type Pixel Microvolumes\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42674\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Salih Alj1, V. Goiffon1, M. Bolin1, J. Carrere2, V. Malherbe2, C. Virmontois3<\/strong><\/p>\n<p>1. ISAE-SUPAERO, France &nbsp; 2. STMicroelectronics, France &nbsp; 3. CNES, France<\/p>\n<p>We show that isolation trenches reduce displacement damage in silicon microvolumes by strongly reducing divacancy formation, based on dark current spectroscopy comparing gamma- and proton-irradiated trench photogates with trench-less vertical photodiodes.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"5\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42675\" href=\"#\" data-title=\"efaq-935-am-f-4-high-field-induced-recovery-of-tid-induced-threshold-voltage-shifts-in-sic-mosfets\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:35 AM | F-4: High-Field-Induced Recovery of TID-Induced Threshold Voltage Shifts in SiC MOSFETs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42675\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>Z. Stone1, M. Hu1, D. Fleetwood1, J. Trippe1, S. Kosier1, R. Schrimpf1, D. Ball1, R. Cadena1, M. Alles1, L. Massengill1<\/strong><\/p>\n<p>1. Vanderbilt University, USA<\/p>\n<p>Threshold-voltage recovery in TID-irradiated SiC MOSFETs by high-field stress is highly repeatable to 1 Mrad(SiO2) cumulative dose. We find that Fowler\u2013Nordheim electron injection reversibly cycles oxide defects between charged and neutral states without progressive degradation.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"6\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42676\" href=\"#\" data-title=\"efaq-950-am-f-5-low-frequency-noise-and-heavy-ion-radiation-effects-in-enhancement-mode-gan-power-hemts\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:50 AM | F-5: Low-Frequency Noise and Heavy-ion Radiation Effects in Enhancement-Mode GaN Power HEMTs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42676\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Shorina1, E. Zhang1, H. Parra1, A. Billa1, P. Maloney1, B. Bolton1, S. Hankinson1, H. Gingold1, J. Debnath1, S. Islam2, T. Liu2, J. Gray2, D. Fleetwood2, L. Massengill2<\/strong><\/p>\n<p>1. University of Central Florida, USA &nbsp; 2. Vanderbilt University, USA<\/p>\n<p>Low-frequency noise in enhancement-mode power HEMTs increases after krypton irradiation, indicating radiation-activated trap generation near the channel and buffer layer. Nitrogen vacancy related defects are likely responsible for the increased noise.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"7\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42677\" href=\"#\" data-title=\"efaq-1005-am-break\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:05 AM | Break\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42677\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Level 1 \u2013 Exhibit Hall A<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"8\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42678\" href=\"#\" data-title=\"efaq-session-g-hardness-assurance-piece-parts-to-systems-and-testing-approaches\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION G \u2014 Hardness Assurance: Piece Parts to Systems and Testing Approaches\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42678\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>10:35 AM Session Introduction &middot; Chair: Almudena Lindoso (University Carlos III Madrid)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"9\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42679\" href=\"#\" data-title=\"efaq-1040-am-g-1-pulsed-electrons-a-method-for-inducing-ion-like-single-event-transients-and-latchup\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:40 AM | G-1: Pulsed Electrons: A Method for Inducing Ion-like Single-Event Transients and Latchup\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42679\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>G. Tzintzarov1, J. Teng1, A. Kulkarni2, S. Brian2, P. Musumeci2, A. Bushmaker1, S. Milton3, R. Berry4, G. Allen5<\/strong><\/p>\n<p>1. The Aerospace Corporation, USA &nbsp; 2. University of California, USA &nbsp; 3. TAU Systems, USA &nbsp; 4. RadiaBeam Technologies, USA &nbsp; 5. NASA Jet Propulsion Laboratory, USA<\/p>\n<p>Development of SEE testing using pulsed electrons is discussed. SET correlation in a photodiode is achieved and SEL testing in a COTS part is discussed. Results support the use of such beams for RHA testing.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"10\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426710\" href=\"#\" data-title=\"efaq-1055-am-g-2-data-sanitization-of-aged-sram-array-using-ionizing-radiation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:55 AM | G-2: Data Sanitization of Aged SRAM Array using Ionizing Radiation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426710\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Stephen Vellankanni1, I. Chatterjee2, U. Guin3, B. Ray1<\/strong><\/p>\n<p>1. Colorado State University, USA &nbsp; 2. Airbus Defence and Space, Germany &nbsp; 3. Auburn University, USA<\/p>\n<p>We demonstrate a TID-based data sanitization technique for aged SRAM, achieving near- complete removal of aging-induced data imprints after 100 krad(Si), and provide a root- cause analysis of the underlying physical mechanisms.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"11\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426711\" href=\"#\" data-title=\"efaq-1110-am-g-3-improved-methods-for-thermal-neutron-see-testing-and-evaluation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:10 AM | G-3: Improved Methods for Thermal Neutron SEE Testing and Evaluation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426711\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>R. Zedric1, N. Dodds1, J. Joffrion1, Y. Xiong1, A. Tonigan1<\/strong><\/p>\n<p>1. Sandia National Laboratories, USA<\/p>\n<p>Evidence is presented that suggests the international standard for thermal neutron SEE testing contains an error that causes the calculated cross sections to be artificially low. The impacts are quantified, and the formula is corrected. RADIATION EFFECTS DATA WORKSHOP INTRODUCTION Chair: Jennifer Taggart (The Aerospace Corporation) \u2013 Exhibitor Drawings \u2013 PUERTO RICO RADIATION EFFECTS DATA WORKSHOP<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"12\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426712\" href=\"#\" data-title=\"efaq-1125-am-radiation-effects-data-workshop-introduction\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:25 AM | Radiation Effects Data Workshop Introduction\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426712\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Chair: Jennifer Taggart (The Aerospace Corporation)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"13\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426713\" href=\"#\" data-title=\"efaq-1135-am-lunch-with-the-exhibitors\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:35 AM | Lunch with the Exhibitors\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426713\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Level 1 \u2013 Exhibit Hall A &middot; 12:50 PM Exhibitor Drawings<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"14\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426714\" href=\"#\" data-title=\"efaq-radiation-effects-data-workshop\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  RADIATION EFFECTS DATA WORKSHOP\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426714\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>1:20\u20133:20 PM &middot; Level 3 \u2013 Ballroom B<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"15\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426715\" href=\"#\" data-title=\"efaq-dw-1-an-integrated-national-network-of-space-irradiation-facilities-for-radiation-effects-testing-and-component-qualification\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-1: An Integrated National Network of Space Irradiation Facilities for Radiation Effects Testing and Component Qualification\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426715\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Vadrucci1, R. Carpentiero1, M. Di Clemente1<\/strong><\/p>\n<p>1. Italian Space Agency, Italy<\/p>\n<p>The paper describes ASIF, Italy\u2019s national space irradiation network, highlighting the REX electron accelerator used within ACDC_Q to optimize diamond quantum sensors, offering controlled irradiation for space qualification and advancing technological autonomy and international research.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"16\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426716\" href=\"#\" data-title=\"efaq-dw-2-ansto-microbeam-facility-versatile-scanning-modalities-for-radiation-testing\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-2: ANSTO Microbeam Facility: Versatile Scanning Modalities For Radiation Testing\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426716\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>R. Drury1, P. Zeljko1, S. Peracchi1<\/strong><\/p>\n<p>1. Australian Nuclear Science and Technology Organisation, Australia<\/p>\n<p>The ANSTO microbeam facilities and the latest developments in scanning modalities are presented, highlighting advanced, spatially resolved radiation testing capabilities for devices, materials, and biological samples, delivering insights into localised damage beyond conventional broad\u2011beam irradiation.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"17\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426717\" href=\"#\" data-title=\"efaq-dw-3-a-new-srim-based-stackup-tool-for-calculating-energy-loss-let-and-ion-range-in-common-see-testing-materials\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-3: A New SRIM-Based Stackup Tool for Calculating Energy Loss, LET, and Ion Range in Common SEE Testing Materials\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426717\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Yeck1, C. Farah1, D. McNanney1, S. Lidia1<\/strong><\/p>\n<p>1. Facility for Rare Isotope Beams, Michigan State University, USA<\/p>\n<p>The Facility for Rare Isotope Beams at Michigan State University has introduced a new SRIM-based stackup tool for calculating energy loss, LET, and range in common SEE testing materials.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"18\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426718\" href=\"#\" data-title=\"efaq-dw-4-proton-and-heavy-ion-characterizations-on-microchip-radiation-tolerant-polarfire-soc-fpga-rtpfs460zt-microprocessor-subsystem\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-4: Proton and Heavy-Ion Characterizations on Microchip Radiation-Tolerant PolarFire\u00ae SoC FPGA RTPFS460ZT Microprocessor Subsystem\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426718\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Toguchi1, N. Rezzak1, D. McNamara2, C. Jean2, B. Burke2, R. Mohan1, I. Bryant3, M. Madugoda1, M. Urias1<\/strong><\/p>\n<p>1. Microchip Technology, USA &nbsp; 2. Microchip Technology, Ireland &nbsp; 3. Microchip Technology, United Kingdom<\/p>\n<p>This paper presents results on the impact of protons and heavy ions on the Radiation- Tolerant PolarFire\u00ae SoC FPGA RTPFS460ZT Microprocessor Subsystem (MSS), demonstrating its potential suitability for space applications.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"19\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426719\" href=\"#\" data-title=\"efaq-dw-5-tid-characterization-of-microchip-radiation-tolerant-polarfire-soc-rtpfs460zt-fpga\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-5: TID Characterization of Microchip Radiation-Tolerant PolarFire\u00ae SoC RTPFS460ZT FPGA\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426719\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Urias1, A. Cai1, N. Rezzak1, S. Toguchi1<\/strong><\/p>\n<p>1. Microchip Technology, USA<\/p>\n<p>This paper provides the Total Ionizing Dose (TID) response of the Radiation-Tolerant PolarFire\u00ae SoC FPGA RTPFS460ZT using gamma ray, demonstrating its resistance to TID up to 100 krad (SiO2).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"20\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426720\" href=\"#\" data-title=\"efaq-dw-6-characterization-of-heavy-ion-and-proton-induced-single-event-effects-in-microchip-polarfire-soc-fpga-rtpfs460zt-fabric\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-6: Characterization of Heavy Ion and Proton-Induced Single-Event Effects in Microchip PolarFire\u00ae SoC FPGA RTPFS460ZT Fabric\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426720\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>N. Rezzak1, S. Toguchi1, M. Madugoda1, M. Reaz1, M. Urias1<\/strong><\/p>\n<p>1. Microchip Technology, USA<\/p>\n<p>This paper presents heavy ion and proton SEE results on the RTPFS460ZT PolarFire\u00ae SoC FPGA fabric. Results cover SEL, SEU, and SEFI across Flip-Flops, SRAM, Mathblock, PLL and pNVM, confirming its suitability for space environments.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"21\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426721\" href=\"#\" data-title=\"efaq-dw-7-see-and-total-dose-results-of-the-isl73849slh-radiation-hardened-single-dual-phase-current-mode-pwm-controller-with-pmbus-telemetry\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-7: SEE and Total Dose Results of the ISL73849SLH Radiation Hardened Single\/Dual Phase Current Mode PWM Controller with PMBus &amp;Telemetry\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426721\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>W. Newman1, M. Campanella1, E. Thomson1, W. Choroco1, C. Thomson1<\/strong><\/p>\n<p>1. Renesas Electronics America, USA<\/p>\n<p>We report the single event performance and low dose rate TID results of the radiation- hardened ISL73849SLH Single\/Dual Phase Current Mode PWM Controller with PMBus &amp; Telemetry.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"22\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426722\" href=\"#\" data-title=\"efaq-dw-8-total-dose-and-single-event-effects-testing-of-the-isl73846-2mhz-double-ended-pwm-controller-with-synchronous-rectification\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-8: Total Dose and Single-Event Effects Testing of the ISL73846 2MHz Double Ended PWM Controller with Synchronous Rectification\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426722\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Campanella1, W. Newman1, E. Thomson1, C. Thomson1, T. Linder1<\/strong><\/p>\n<p>1. Renesas Electronics America, USA<\/p>\n<p>We report the single event effects and total ionizing dose test results for the ISL73846 2MHz double ended PWM controller with synchronous rectification.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"23\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426723\" href=\"#\" data-title=\"efaq-dw-9-total-dose-and-single-event-effects-testing-of-the-isl75055-3a-source-and-sink-ddr-terminator-ldo-with-buffered-reference\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-9: Total Dose and Single-Event Effects Testing of the ISL75055 3A Source and Sink DDR Terminator\/LDO with Buffered Reference\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426723\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Campanella1, W. Newman1, E. Thomson1, C. Thomson1, D. Wackley1<\/strong><\/p>\n<p>1. Renesas Electronics America, USA<\/p>\n<p>We report the single event effects and total ionizing dose test results for the ISL75055 3A Source and Sink DDR Terminator\/LDO with Buffered Reference.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"24\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426724\" href=\"#\" data-title=\"efaq-dw-10-compendium-of-nasa-goddard-space-flight-centers-current-radiation-effects-test-results\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-10: Compendium of NASA Goddard Space Flight Center\u2019s Current Radiation Effects Test Results\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426724\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>L. Ryder1, K. Ryder1, E. Wilcox1, T. Carstens1, S. Roffe1, A. Wood1, M. Campola1, J. Osheroff1, M. Joplin1<\/strong><\/p>\n<p>1. NASA Goddard Space Flight Center, USA<\/p>\n<p>We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion- and proton-induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"25\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426725\" href=\"#\" data-title=\"efaq-dw-11-a-novel-multifunctional-radiation-shielding-to-enable-the-use-of-cots-based-electronics-in-space\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-11: A Novel Multifunctional Radiation Shielding to Enable the use of COTS based Electronics in Space\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426725\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>L. Sihver1, Y. Barghouty1 A lightweight hydrogen rich nano doped Multifunctional Shielding Polymer (MSP),<\/strong><\/p>\n<p>1. Cosmic Shielding Corporation, USA<\/p>\n<p>commercially branded as Plasteel\u2122, with exceptional shielding properties, and good mechanical and thermal characteristics will be presented.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"26\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426726\" href=\"#\" data-title=\"efaq-dw-12-heavy-ion-characterization-of-f28377d-sep-microcontroller\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-12: Heavy Ion Characterization of F28377D-SEP Microcontroller\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426726\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Dwadasi1, M. Pate2, R. Rodriguez-Davila1, T. Nikoubin1, R. Baumann1<\/strong><\/p>\n<p>1. University of Texas at Dallas, USA &nbsp; 2. Texas Instruments, USA<\/p>\n<p>This work reports the SEL, SEU and SEFI test results obtained from Heavy-Ion testing of TI F28377D-SEP Microcontroller. This dual-core microcontroller is designed for real-time closed-loop control in power and motor-drive applications with dedicated peripherals.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"27\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426727\" href=\"#\" data-title=\"efaq-dw-13-radiation-evaluation-of-the-tps7h1301-sp-3v-to-6-3v-input-400ma-6v-to-0-6v-radiation-hardened-switched-capacitor-voltage-inverter-with-integrated-low-dropout-regulator\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-13: Radiation Evaluation of the TPS7H1301-SP 3V to 6.3V Input, 400mA, -6V to -0.6V Radiation-Hardened Switched Capacitor Voltage Inverter with Integrated Low Dropout Regulator\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426727\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>A. Marinelarena1, T. Lew1, M. Trevino1<\/strong><\/p>\n<p>1. Texas Instruments, USA<\/p>\n<p>Single Events Effects and Total Ionizing Dose results for the TPS7H1301-SP 3V to 6.3V Input, Switched Capacitor Voltage Inverter is summarized, showing robust SEE performance up to LETEFF=75MeV-cm2\/mg and excellent TID performance up to 100krad(Si).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"28\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426728\" href=\"#\" data-title=\"efaq-dw-14-neutron-irradiation-of-bjt-based-level-translators-and-tvs-diodes-for-fusion-reactor-systems\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-14: Neutron Irradiation of BJT-Based Level Translators and TVS Diodes for Fusion Reactor Systems\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426728\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>K. Reed1, N. Ericson1, S. Frank1, L. Clonts1, P. Mulligan1, F. Ivester1, C. Harvey1, H. Patel1<\/strong><\/p>\n<p>1. Oak Ridge National Laboratory, USA<\/p>\n<p>Emerging fusion reactors require advanced instrumentation and control systems in locations subject to high neutron and gamma doses. This summary details the irradiation testing and results of level translator and protection circuitry for ITER subsystems.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"29\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426729\" href=\"#\" data-title=\"efaq-dw-15-irradiation-of-operational-amplifiers-for-fusion-reactor-instrumentation-and-control\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-15: Irradiation of Operational Amplifiers for Fusion Reactor Instrumentation and Control\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426729\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>N. Ericson1, K. Reed1, S. Frank1, L. Clonts1, P. Mulligan1, F. Ivester1, C. Harvey1, H. Patel1<\/strong><\/p>\n<p>1. Oak Ridge National Laboratory, USA<\/p>\n<p>An electronics system for monitoring ITER vacuum\/gas systems was prototyped without radiation-hardened components. In response to ITER\u2019s demanding radiation levels, this paper reports detailed testing of a precision amplifier, summarizing test design and performance trends.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"30\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426730\" href=\"#\" data-title=\"efaq-dw-16-single-event-effects-susceptibilities-of-select-commercial-off-the-shelf-components-for-space\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-16: Single Event Effects Susceptibilities of Select Commercial-Off-The Shelf Components for Space\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426730\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>D. Lo1, T. Tran1<\/strong><\/p>\n<p>1. Northrop Grumman Systems Corporation, USA<\/p>\n<p>We report the results of single event effects (SEE) testing with heavy ions of COTS (commercial-off-the-shelf) electronic components considered for space missions.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"31\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426731\" href=\"#\" data-title=\"efaq-dw-17-characterization-of-the-sensitivity-of-three-mmic-lnas-to-total-ionizing-dose\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-17: Characterization of the sensitivity of three MMIC LNAs to Total Ionizing Dose\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426731\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Diot1, M. Gaillardin1, G. Assaillit1, C. Delbos1, D. Poujols1<\/strong><\/p>\n<p>1. CEA, France<\/p>\n<p>High-performance RF components are being increasingly used in different applications. It is essential to characterize their sensitivity to ionizing radiation. This study aims to determine the susceptibility of three LNAs: CMD319C3, CMD264P3, and HMC8411LP2FE.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"32\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426732\" href=\"#\" data-title=\"efaq-dw-18-see-test-results-of-microchips-radiation-hardened-resettable-latch-up-current-limiter-lx7714\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-18: SEE Test Results of Microchip\u2019s Radiation Hardened Resettable Latch-up Current Limiter LX7714\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426732\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Heun1, E. Colmet-Daage1, R. Stevens1, D. Johnson1, O. Mansilla1<\/strong><\/p>\n<p>1. Microchip Technology, USA<\/p>\n<p>Microchip has developed the radiation hardened LX7714 power switch to protect satellite power buses from destructive overcurrent events. This paper focuses on destructive Single Event Latch-up (SEL) and Single Event Transient (SET) test results.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"33\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426733\" href=\"#\" data-title=\"efaq-dw-19-single-event-effects-and-total-ionizing-dose-characterization-of-the-frontgrade-technologies-ut88ethphy4p10g-four-port-10gbase-t-ethernet-phy\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-19: Single Event Effects and Total Ionizing Dose Characterization of the Frontgrade Technologies UT88ETHPHY4P10G Four Port 10GBase-T Ethernet PHY\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426733\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Vonthun1, A. Turnbull1, V. Olariu1, R. Dumitru1, B. Baranski1, G. Hoglund1<\/strong><\/p>\n<p>1. Frontgrade Technologies, USA<\/p>\n<p>The UT88ETHPHY4P10G 10G Ethernet Phy was characterized for SEL and SEFI up to a LET of 67 MeV\u2219cm2\/mg with heavy ions and characterized for total ionizing dose to 300 krad(Si).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"34\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426734\" href=\"#\" data-title=\"efaq-dw-20-single-event-effects-and-total-ionizing-dose-characterization-of-the-frontgrade-technologies-ut8mrqrhxg-qspi-mram-memory\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-20: Single Event Effects and Total Ionizing Dose Characterization of the Frontgrade Technologies UT8MRQRHXG QSPI MRAM Memory\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426734\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Vonthun1, E. Fehrman1, R. Dumitru1, G. Hoglund1, A. Turnbull1, J. Benthem1, S. Sapp1<\/strong><\/p>\n<p>1. Frontgrade Technologies, USA<\/p>\n<p>The UT8MRQRHXG QSPI MRAM was characterized for SEL and SEFI up to a LET of 77.5 MeV\u2219cm2\/mg with heavy ions and characterized for total ionizing dose to 300 krad(Si).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"35\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426735\" href=\"#\" data-title=\"efaq-dw-21-radiation-testing-of-the-feram-version-of-the-msp430fr5994\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-21: Radiation Testing of the FeRAM-version of the MSP430FR5994\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426735\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>H. Quinn1, M. Felix2, W. Slater1<\/strong><\/p>\n<p>1. Air Force Research Laboratory, USA &nbsp; 2. Cosmiac, USA<\/p>\n<p>The Texas Instruments MSP430FR5994 is a potential option for direct-to-digital computation for low-bandwidth sensors. The results are compared to a previous version of the component.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"36\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426736\" href=\"#\" data-title=\"efaq-dw-22-heavy-ion-and-proton-radiation-test-results-for-micron-ddr4-dram\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-22: Heavy Ion and Proton Radiation Test Results for Micron DDR4 DRAM\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426736\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>I. Troxel1, M. Gruber1, D. Christenson1, P. Tokeshi2, B. Mark2<\/strong><\/p>\n<p>1. Troxel Aerospace Industries, USA &nbsp; 2. Moog Broad Reach, USA<\/p>\n<p>Heavy ion and proton DSEE and NDSEE characterization results are presented for testing of Micron DDR4 DRAM devices.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"37\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426737\" href=\"#\" data-title=\"efaq-dw-23-a-combined-radiation-electrical-stress-characterization-of-power-gan-hemts\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-23: A Combined, Radiation-Electrical Stress Characterization of Power GaN HEMTs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426737\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Van Burger1, J. Oarethu1, C. Pham1, N. French1, N. Leak2, S. Defaz2, J. Saldivar2, F. Luo2, M. Salato3, R. Strittmatter4, J. Likar1, J. Kozak1<\/strong><\/p>\n<p>1. Johns Hopkins Applied Physics Lab, USA &nbsp; 2. Stony Brook University, USA &nbsp; 3. EPC Space, USA &nbsp; 4. EPC Corporation, USA<\/p>\n<p>GaN HEMTs offer advantages for space power electronics because of increasing power density and TID resilience. Electrical and SEE stresses are now being combined to evaluate the impact on electrical parameter derating, and useful lifetime.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"38\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426738\" href=\"#\" data-title=\"efaq-dw-24-angular-and-energy-dependence-of-heavy-ion-induced-see-in-commercial-epc-egan-power-transistors\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-24: Angular and Energy Dependence of Heavy Ion Induced SEE in Commercial EPC eGaN Power Transistors\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426738\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>P. Maloney1, A. Billa1, B. Bolton1, S. Hankinson1, H. Gingold1, S. Shorina1, D. Fleetwood2, E. Zhang1<\/strong><\/p>\n<p>1. University of Central Florida, USA &nbsp; 2. Vanderbilt University, USA<\/p>\n<p>This paper reports angular heavy-ion single-event effects in commercial EPC enhancement-mode GaN power HEMTs, including SELC and SEB thresholds, based primarily on Xe irradiation at 16 and 20 MeV, with supporting Ag and Cu data.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"39\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426739\" href=\"#\" data-title=\"efaq-dw-25-analysis-of-heavy-ion-induced-current-waveforms-in-si-and-sic-1200-v-power-devices\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-25: Analysis of Heavy-Ion-Induced Current Waveforms in Si and SiC 1200 V Power Devices\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426739\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Taniguchi1, H. Nakamoto1, J. Furuta2, R. Nakajima1, A. Matsumoto1, S. Onoda3, K. Kobayashi1<\/strong><\/p>\n<p>1. Kyoto Institute of Technology, Japan &nbsp; 2. Okayama Prefectural University, Japan &nbsp; 3. National Institutes for Quantum Science and Technology, Japan<\/p>\n<p>We measured heavy-ion-induced current waveforms of 1200 V Si and SiC devices to investigate Single Event Burnout mechanisms. The study evaluates the impact of material properties and structural differences on the failure process.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"40\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426740\" href=\"#\" data-title=\"efaq-dw-26-total-ionizing-dose-and-single-event-effects-results-of-the-vpt-components-2n7561-2n7555-and-2n7556-power-mosfets\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-26: Total Ionizing Dose and Single Event Effects Results of the VPT Components 2N7561, 2N7555 and 2N7556 Power MOSFETs\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426740\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>P. Benedetto1<\/strong><\/p>\n<p>1. Arizona State University, USA<\/p>\n<p>This paper shows the radiation results of the VPT Components RAD7234 die family of n- channel MOSFETs fabricated at LA Semiconductor, designed to be radiation-hardened to 100krad(Si) and SEE immune to Xe (15 MeV\/n beam).<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"41\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426741\" href=\"#\" data-title=\"efaq-dw-27-total-ionizing-dose-and-class-p-equivalent-reliability-testing-of-a-commercial-quality-plastic-encapsulated-analog-digital-converter\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-27: Total Ionizing Dose and Class P-Equivalent Reliability Testing of a Commercial-Quality, Plastic-Encapsulated Analog Digital Converter\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426741\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>E. Auden1, A. Wright2, J. Bonsall2, J. Teng2, T. Rodriguez2, N. Sepulveda-Ramos2<\/strong><\/p>\n<p>1. Los Alamos National Laboratory, USA &nbsp; 2. The Aerospace Corporation, USA<\/p>\n<p>We present results for a commercial-quality, plastic-encapsulated microcircuit (PEM) analog digital converter (ADC) subjected to total ionizing dose (TID) testing and reliability screening commensurate with MIL-STD-38535 class P.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"42\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426742\" href=\"#\" data-title=\"efaq-dw-28-tid-and-proton-see-characterization-of-a-cots-current-sense-amplifier-adc-and-dc-dc-converter\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-28: TID and Proton SEE Characterization of a COTS Current Sense Amplifier, ADC, and DC- DC Converter\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426742\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>B. Torres-Kulik1, M. Mahmud1, D. Hiemstra1<\/strong><\/p>\n<p>1. MDA Space, Canada<\/p>\n<p>The total ionizing dose and proton single event effects characterization of a commercial- off-the-shelf current sense amplifier, analog to digital converter, and DC-DC converter is summarized.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"43\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426743\" href=\"#\" data-title=\"efaq-dw-29-tid-and-see-evaluation-of-the-max22507e-transceiver\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-29: TID and SEE Evaluation of the MAX22507E Transceiver\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426743\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Cardenas Chavez1, D. Hiemstra2, A. Noguera Cundar1, L. Chen1<\/strong><\/p>\n<p>1. University of Saskatchewan, Canada &nbsp; 2. MDA Space, Canada<\/p>\n<p>This study evaluated the MAX22507E transceiver for TID and SEE using low-dose rate 60Co radiation and high-energy protons. The transceiver showed TID tolerance up to 80 krad(Si), with functional failure observed due to SEE observed.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"44\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426744\" href=\"#\" data-title=\"efaq-dw-30-guide-to-the-2025-ieee-radiation-effects-data-workshop-record\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-30: Guide to the 2025 IEEE Radiation Effects Data Workshop Record\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426744\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>D. Hiemstra1<\/strong><\/p>\n<p>1. MDA Space, Canada<\/p>\n<p>The 2025 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type or effect.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"45\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426745\" href=\"#\" data-title=\"efaq-dw-31-single-event-upset-characterization-of-the-versal-ai-engines-using-proton-irradiation\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-31: Single Event Upset Characterization of the Versal\u00ae AI Engines Using Proton Irradiation\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426745\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>D. Hiemstra1, N. Hu1<\/strong><\/p>\n<p>1. MDA Space, Canada<\/p>\n<p>Proton induced SEU cross-section of the Versal XCVC1902 AI Engines is presented. Upset rates in the space radiation environment are estimated.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"46\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426746\" href=\"#\" data-title=\"efaq-dw-32-neutrons-and-60-mev-protons-evaluation-of-amd-6nm-versaltm-series-gen-2-multicore-scalar-processing-system-ps\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  DW-32: Neutrons and &gt; 60 MeV Protons Evaluation of AMD 6nm VersalTM Series Gen 2 Multicore Scalar Processing System (PS)\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426746\" data-parent=\"#sp-ea-4267\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>P. Maillard1<\/strong><\/p>\n<p>1. AMD, USA<\/p>\n<p>This paper presents the neutrons and proton single-event responses of AMD\u2019s 6nm Versal\u2122 AIE Edge Gen2 multicore scalar processing system (PS) using AMD\u2019s System Validation Tool (SVT) suite. SEU, SEFI, and SEL results are presented. \u2013 RESG OPEN MEETING The Future of CERN - Markus BRUEGGER INVITED SPEAKER SESSION G HARDNESS ASSURANCE: PIECE PARTS TO SYSTEMS AND TESTING APPROACHES<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t<\/div><\/div>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"4\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42474\" href=\"#\" data-title=\"efaq-friday\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  Friday\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42474\" data-parent=\"#sp-ea-4247\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<style id=\"ea_dynamic_css4268\">#sp-ea-4268 .spcollapsing{height: 0; overflow: hidden; transition-property: height; transition-duration: 500ms;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single.eap_inactive>.ea-header a {background-color: #bb0000 !important; color: #fff !important;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single{ margin-bottom: 10px; border: 1px solid #e2e2e2; border-radius: 3px;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single.ea-expand{ border-color: #e2e2e2;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single:hover{ border-color: #e2e2e2;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a {background: #eee;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single.ea-expand>.ea-header a {background: #eee;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header:hover a {background: #eee;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a .eap-title-icon { color: #444;font-size: 20px;} #sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a .eap-title-custom-icon {max-width: 20px;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header:hover a .eap-title-icon {color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single.ea-expand>.ea-header a .eap-title-icon {color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a {padding: 15px 15px 15px 15px; color: #444; font-size: 20px; line-height: 30px; text-align: left; letter-spacing: 0px; text-transform: none;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header:hover a {color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single.ea-expand>.ea-header a {color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body p,#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body{background: #fff; padding: 15px 15px 15px 15px; border-radius: 0 0 3px 3px; color: #444; font-size: 16px; text-align: left; letter-spacing: 0px; line-height: 26px; animation-delay: 200ms; text-transform: none;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa:before {color: #444; font-size: 16px; font-style: normal;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header:hover a .ea-expand-icon.fa:before {color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single.ea-expand>.ea-header a .ea-expand-icon.fa:before {color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single .ea-body{border: 0;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single{background: transparent; border: none;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a {border-left: 1px solid #e2e2e2; border-radius: 0; border-bottom: 1px solid #e2e2e2;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {margin-right: 10px;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {float: right;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a .ea-expand-icon.fa {margin-right: 0;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.ea-header a {border-right: 1px solid #e2e2e2; border-left:0}#sp-ea-4268 #eap_faq_search_bar_container {display:none; opacity:0;}#sp-ea-4268 #eap_faq_search_bar_container span::before{content:\"\";}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body p{ padding:0px}#sp-ea-4268>.sp-ea-single>.sp-collapse>.ea-body .eap-product-price {color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-price del{color: rgba(68,68,68,0.71);}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a { border: 1px solid #DAD6DA;border-radius: 2px;background-color: transparent;color: #444;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button .woocommerce a:hover { border-color: #444;background-color: #444;color: #fff;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>>.sp-collapse>.ea-body .eap-product-cart-button .eap-product-quantity .eap_input_text {border: 1px solid #DAD6DA;}#sp-ea-4268.sp-easy-accordion>.sp-ea-single>.sp-collapse>.ea-body .eap-product-cart-button a.add_to_cart_button{position: relative;}<\/style><div id=\"sp-eap-accordion-section-4268\" class=\"sp-eap-container\"><div id=\"sp-ea-4268\" class=\"sp-ea-twelve sp-easy-accordion \" data-ex-icon=\"fa-angle-right\" data-col-icon=\"fa-angle-down\" data-ea-active=\"ea-click\" data-ea-mode=\"vertical\" data-ea-multi-column=\"\" data-ea-coll=\"\" data-keep-accordion=\"\" data-autoclose=\"\" data-preloader=\"\" data-scroll-active-item=\"\" data-offset-to-scroll=\"0\" data-autoplaytime=\"3000\" data-expand=\"\" data-post-id=\"4268\" data-accordion_mode=\"ea-all-close\">\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"0\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42680\" href=\"#\" data-title=\"efaq-700-am-breakfast\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  7:00 AM | Breakfast\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42680\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>For registered conference attendees<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"1\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42681\" href=\"#\" data-title=\"efaq-830-am-invited-speaker\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  8:30 AM | Invited Speaker\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42681\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>The Future of CERN \u2014 Markus Br\u00fcgger<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"2\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42682\" href=\"#\" data-title=\"efaq-session-g-hardness-assurance-piece-parts-to-systems-and-testing-approaches-continued\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION G \u2014 Hardness Assurance: Piece Parts to Systems and Testing Approaches (continued)\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42682\" data-parent=\"#sp-ea-4268\">\n\t\t\t<div class=\"ea-body animated normal\"> No Content <\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"3\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42683\" href=\"#\" data-title=\"efaq-930-am-g-4-predicting-the-location-of-heavy-ion-interactions-within-analog-components\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:30 AM | G-4: Predicting the Location of Heavy-Ion Interactions within Analog Components\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42683\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>J. Carpenter1, T. Peyton1, J. Hales2, T. Crane2, D. McMorrow2, M. McKinney1, J. Lazenby1, D. Loveless1, A. Ildefonso1<\/strong><\/p>\n<p>1. Indiana University, USA &nbsp; 2. U.S. Naval Research Laboratory, USA<\/p>\n<p>Distance-based hierarchical clustering links heavy-ion SETs to spatially encoded pulsed- laser libraries, enabling the prediction of interaction locations in a COTS operational amplifier. Topside SPA validates clustering confidence, enabling accurate spatial mapping of heavy-ion-sensitive nodes.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"4\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42684\" href=\"#\" data-title=\"efaq-945-am-g-5-estimating-seu-cross-sections-in-single-port-and-two-port-srams-using-data-retention-voltage-measurements\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  9:45 AM | G-5: Estimating SEU Cross-Sections in Single-Port and Two-Port SRAMs Using Data Retention Voltage Measurements\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42684\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>S. Tolson1, X. Zhao1, J. Kronenberg1, N. Pieper1, Y. Xiong1, B. Bhuva1<\/strong><\/p>\n<p>1. Vanderbilt University, USA<\/p>\n<p>SEU cross-sections of single-port and two-port SRAMs fabricated in a commercial 3-nm bulk FinFET technology node process are estimated using data retention voltage measurements, a simple measure of an SRAM cell\u2019s stability.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"5\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42685\" href=\"#\" data-title=\"efaq-1000-am-g-6-flipflop-architecture-effect-on-geo-error-rate-for-finfet-3-nm-node\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:00 AM | G-6: FlipFlop architecture effect on GEO error rate for FinFET 3-nm node\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42685\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>G. Gasiot1, S. El Hajji1, T. Thery1, V. Correas1, V. Malherbe1, Y. Xiong2, N. Pieper2,<\/strong><\/p>\n<p>J. Kronenberg2, J-L. Autran3, B. Bhuva2, D. Pandini4, P. Roche1 1. STMicroelectronics, France 2. Vanderbilt University, USA 3. Institut de Physique de Rennes, France 4. STMicroelectronics, Italy Once validated an industrial Monte Carlo modeling tool is used to explore the error rate response of several Flip Flop designs in 3-nm FinFETs to help designers in selecting the best ones for their needs.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"6\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42686\" href=\"#\" data-title=\"efaq-1015-am-break\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:15 AM | Break\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42686\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>Level 3 Foyer and Terrace<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"7\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42687\" href=\"#\" data-title=\"efaq-session-h-hardening-by-design\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  SESSION H \u2014 Hardening by Design\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42687\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p>10:45 AM Session Introduction &middot; Chair: Nathan Nowlin (Sandia National Laboratories)<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"8\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42688\" href=\"#\" data-title=\"efaq-1050-am-h-1-a-novel-radiation-hardened-by-design-fpga-10t-finfet-configuration-cell-using-high-resistance-feedback\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  10:50 AM | H-1: A Novel Radiation-Hardened-by-Design FPGA 10T FinFET Configuration Cell Using High- Resistance Feedback\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42688\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>M. Reaz1, N. Rezzak1, V. Nguyen1, J. McCollum1, F. Hawley1, E. Hamdy1<\/strong><\/p>\n<p>1. Microchip Technology, USA<\/p>\n<p>A novel RHBD 10T FPGA configuration cell in 12-nm FinFETs using 1.8V devices and a high- resistance RC feedback demonstrates SEU immunity from terrestrial-to-GEO environments, with TCAD identifying gate-oxide charge collection causing exceptionally rare high-LET SEUs.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"9\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse42689\" href=\"#\" data-title=\"efaq-1105-am-h-2-impact-of-topology-on-tid-response-of-4th-generation-sige-hbt-current-mirrors\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:05 AM | H-2: Impact of Topology on TID Response of 4th-Generation SiGe HBT Current Mirrors\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse42689\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>Z. Brumbach1, M. Hosseinzadeh1, Q. Parker1, D. Sam1, B. Ringel1, C. Ellis1, Y. Mensah1, P. Harris2, M. McCurdy2, R. Reed2, J. Cressler1<\/strong><\/p>\n<p>1. Georgia Institute of Technology, USA &nbsp; 2. Vanderbilt University, USA<\/p>\n<p>TID effects on four distinct SiGe HBT current mirror topologies are analyzed. Simple and cascode current mirrors showed mild degradation, while Wilson and balanced-Wilson topologies did not. Circuit simulations were conducted to understand system-level impact. Comparing the SEE Response of Different RF Topological Design Choices Using Active RF H-3 Isolators D. Sam1, J. Caezza1, J. Teng2, B. Ringel1, G. Tzintzarov2, J. Cressler1 1. Georgia Institute of Technology, USA 2. The Aerospace Corporation, USA A pulsed-laser study compares the SEE response of two RF isolator topologies. Results demonstrate a reduced transient magnitude and duration in one of the topologies, and circuit simulations are leveraged to pinpoint SEE-resilient design choices.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"10\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426810\" href=\"#\" data-title=\"efaq-h-3-missing\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  [H-3] (missing)\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426810\" data-parent=\"#sp-ea-4268\">\n\t\t\t<div class=\"ea-body animated normal\"> No Content <\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"11\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426811\" href=\"#\" data-title=\"efaq-1135-am-h-4-radiation-tolerant-analog-in-memory-fft-using-commercial-off-the-shelf-176-layer-3d-nand-flash\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  11:35 AM | H-4: Radiation-Tolerant Analog In-Memory FFT Using Commercial Off-The-Shelf 176-Layer 3D NAND Flash\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426811\" data-parent=\"#sp-ea-4268\">\n\t\t<div class=\"ea-body\"> \n<div class=\"ea-content-wrapper animated normal\"> \n\t<p><strong>V. Shastry1, J. Park1, S. Seo2, S. Kim2, S. Yi1<\/strong><\/p>\n<p>1. Texas A&amp;M University, USA &nbsp; 2. University of Rhode Island, USA<\/p>\n<p>Heavy-ion tolerant analog in-memory FFT computation is evaluated using commercial 176- layer TLC 3D NAND flash operated in SLC mode, where widened threshold voltage separation preserves FFT accuracy under heavy-ion exposure despite radiation-induced threshold voltage variability.<\/p>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t\t<div class=\"ea-card  sp-ea-single\"  data-accordion-id= \"12\">\n\n\t\t<h3 class=\"ea-header\">\n\t\t\t<a class=\"collapsed\" data-sptoggle=\"spcollapse\" rel=\"nofollow\" data-sptarget=\"#collapse426812\" href=\"#\" data-title=\"efaq-end-of-technical-program\" aria-expanded=\"false\">\n\t\t\t\t<i class=\"ea-expand-icon fa fa-angle-down\"><\/i>  End of Technical Program\t\t\t<\/a>\n\t\t<\/h3>\n\n\t\t<div class=\"sp-collapse spcollapse spcollapse\" id=\"collapse426812\" data-parent=\"#sp-ea-4268\">\n\t\t\t<div class=\"ea-body animated normal\"> No Content <\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t<\/div><\/div>\n<\/div>\n<\/div>\n\t\t\t<\/div>\n\t<\/div>\n\t<\/div><\/div>[\/vc_column_text][\/vc_column][\/vc_row][vc_row disable_element=&#8221;yes&#8221;][vc_column width=&#8221;1\/2&#8243;][vc_column_text]<span style=\"text-decoration: underline;\"><strong>Technical\/Exhibit<\/strong><\/span><\/p>\n<p><strong>Sunday-Friday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">On-Site Registration \u2013 Van Horn A<\/p>\n<p style=\"padding-left: 40px;\">Pre-Registration (Sun\/Mon Only) \u2013 The Terrace<\/p>\n<p><strong>Monday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">A\/V Preview Room \u2013 Benton<\/p>\n<p style=\"padding-left: 40px;\">Side Meeting Rooms \u2013 Empire A, B, C<\/p>\n<p><strong>Monday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Short Course Sessions &amp; Exam \u2013 Exhibit Hall B<\/p>\n<p><strong>Tuesday &#8211; Friday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Technical Sessions \u2013 Exhibit Hall B<\/p>\n<p><strong>Tuesday &#8211; Wednesday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Exhibits \u2013 Exhibit Hall A<\/p>\n<p><strong>Wednesday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Poster Session &#8211; Chicago<\/p>\n<p><strong>Thursday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">REDW Session \u2013 New York<\/p>\n<p style=\"padding-left: 40px;\">Open Meeting \u2013 Exhibit Hall B<\/p>\n[\/vc_column_text][\/vc_column][vc_column width=&#8221;1\/2&#8243;][vc_column_text]<span style=\"text-decoration: underline;\"><strong>Dining\/Social<\/strong><\/span><\/p>\n<p><strong> Sunday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Welcome Reception \u2013 The Terrace<\/p>\n<p><strong>Monday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Breakfast \u2013 The Terrace, Atlanta<\/p>\n<p style=\"padding-left: 40px;\">Morning Break &#8211; Prefunction<\/p>\n<p style=\"padding-left: 40px;\">Short Course Luncheon \u2013 The Terrace, Atlanta<\/p>\n<p style=\"padding-left: 40px;\">Afternoon Break &#8211; Prefunction<\/p>\n<p><strong>Tuesday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Breakfast, Morning Break \u2013 Exhibit Hall A<\/p>\n<p style=\"padding-left: 40px;\">Exhibitor Lunch \u2013 Exhibit Hall A<\/p>\n<p style=\"padding-left: 40px;\">Afternoon Break \u2013 Exhibit Hall A<\/p>\n<p style=\"padding-left: 40px;\">Exhibit Reception \u2013 Exhibit Hall A<\/p>\n<p><strong>Wednesday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Breakfast, Morning Break \u2013 Exhibit Hall A<\/p>\n<p style=\"padding-left: 40px;\">Exhibitor Lunch &amp; Raffle \u2013 Exhibit Hall A<\/p>\n<p style=\"padding-left: 40px;\">Young Professionals Lunch* &#8211; Chouteau<\/p>\n<p style=\"padding-left: 40px;\">Afternoon Break \u2013 Prefunction<\/p>\n<p><strong>Thursday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Breakfast \u2013 The Terrace, Atlanta<\/p>\n<p style=\"padding-left: 40px;\">Women in Engineering Lunch* &#8211; Chouteau<\/p>\n<p style=\"padding-left: 40px;\">Morning Break &#8211; Prefunction<\/p>\n<p style=\"padding-left: 40px;\">Afternoon Break &#8211; Prefunction<\/p>\n<p><strong>Friday<\/strong><\/p>\n<p style=\"padding-left: 40px;\">Breakfast \u2013 The Terrace, Atlanta<\/p>\n<p style=\"padding-left: 40px;\">Morning Break \u2013 Prefunction<\/p>\n<p>&nbsp;<\/p>\n<p style=\"padding-left: 40px;\">*Ticket required for this event<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row][vc_row disable_element=&#8221;yes&#8221;][vc_column][vc_gallery type=&#8221;image_grid&#8221; images=&#8221;8422,8421,8420,8419,8418,8417&#8243; title=&#8221;Hotel Layout&#8221;][\/vc_column][\/vc_row]\n","protected":false},"excerpt":{"rendered":"<p>[vc_row][vc_column][vc_column_text][\/vc_column_text][\/vc_column][\/vc_row][vc_row disable_element=&#8221;yes&#8221;][vc_column width=&#8221;1\/2&#8243;][vc_column_text]Technical\/Exhibit Sunday-Friday On-Site Registration \u2013 Van Horn A Pre-Registration (Sun\/Mon Only) \u2013 The Terrace Monday A\/V Preview Room \u2013 Benton Side Meeting Rooms \u2013 Empire A, B, C Monday Short Course Sessions &amp; Exam \u2013 Exhibit Hall B Tuesday &#8211; Friday Technical Sessions \u2013 Exhibit Hall B Tuesday &#8211; Wednesday Exhibits \u2013 Exhibit&hellip; <a class=\"more-link\" href=\"https:\/\/www.nsrec.com\/nsrec-2026-schedule\/\">Continue reading <span class=\"screen-reader-text\">NSREC 2026 Schedule<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-8395","page","type-page","status-publish","hentry","entry"],"acf":{"page_header":[{"ID":8749,"post_author":"2","post_date":"2025-09-04 20:34:04","post_date_gmt":"2025-09-04 20:34:04","post_content":"[vc_row][vc_column][vc_empty_space height=\"125px\"][\/vc_column][\/vc_row][vc_row][vc_column width=\"1\/2\"][vc_column_text]\r\n<h1>IEEE Nuclear &amp; Space Radiation Effects Conference<\/h1>\r\n<h2>JULY 20th-24th, 2026<\/h2>\r\n<h2>San Juan, Puerto Rico, USA<\/h2>\r\n[\/vc_column_text][vc_column_text]\r\n<div class=\"follow-nsrec-wrap\">Follow NSREC [nsrec_social_icons]<\/div>\r\n[\/vc_column_text][vc_empty_space height=\"6px\"][vc_btn title=\"NSREC Brochure\" style=\"3d\" color=\"warning\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F07%2F2026_NSRECBrochure_Final_V2e.pdf|target:_blank\"][vc_empty_space height=\"6px\"][vc_btn title=\"Schedule at a Glance\" style=\"3d\" color=\"inverse\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fschedule-at-a-glance%2F|target:_blank\"][\/vc_column][vc_column width=\"1\/4\"][vc_single_image image=\"8767\" style=\"vc_box_rounded\"][vc_empty_space height=\"16px\"][vc_btn title=\"Chair's Invitation\" color=\"inverse\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2025%2F11%2FInvitation-Letter.pdf|title:Chair%E2%80%99s%20Invitation|target:_blank\"][vc_separator][\/vc_column][vc_column width=\"1\/4\"][vc_empty_space height=\"290px\"][vc_btn title=\"Short Course Description\" color=\"danger\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F04%2FNSREC-2026ShortCourse-FLYER_v6-Final.pdf|title:Short%20Course%20Description|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Supporter and Exhibitor Registration\" color=\"danger\" link=\"url:https%3A%2F%2Fcvent.me%2FvlPo1L|title:Supporter%20Registration|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Hotel Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fbook.passkey.com%2Fevent%2F51004057%2Fowner%2F5772432%2Fhome%3Futm_campaign%3D299386963c%26mobile%3Dtrue%26dw%3D414|title:Hotel%20Registration%20|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Conference Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fcvent.me%2FaW0lgE|title:Conference%20Registration|target:_blank\"][\/vc_column][\/vc_row][vc_row][vc_column][vc_empty_space height=\"16px\"][\/vc_column][\/vc_row][vc_row][vc_column][\/vc_column][\/vc_row]","post_title":"Main Header 2026","post_excerpt":"","post_status":"publish","comment_status":"closed","ping_status":"closed","post_password":"","post_name":"main-header-2026","to_ping":"","pinged":"","post_modified":"2026-07-19 12:34:21","post_modified_gmt":"2026-07-19 12:34:21","post_content_filtered":"","post_parent":0,"guid":"https:\/\/www.nsrec.com\/?post_type=headers&#038;p=8749","menu_order":0,"post_type":"headers","post_mime_type":"","comment_count":"0","filter":"raw"}]},"_links":{"self":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8395","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/comments?post=8395"}],"version-history":[{"count":5,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8395\/revisions"}],"predecessor-version":[{"id":9184,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8395\/revisions\/9184"}],"wp:attachment":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/media?parent=8395"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}