{"id":8535,"date":"2025-05-11T22:14:08","date_gmt":"2025-05-11T22:14:08","guid":{"rendered":"https:\/\/www.nsrec.com\/?page_id=8535"},"modified":"2026-06-25T01:30:36","modified_gmt":"2026-06-25T01:30:36","slug":"session-a","status":"publish","type":"page","link":"https:\/\/www.nsrec.com\/session-a\/","title":{"rendered":"Technical Program 2026 – Session A"},"content":{"rendered":"[vc_row][vc_column][vc_column_text]\n

2026 IEEE NSREC TECHNICAL PROGRAM<\/strong><\/h2>\n

SESSION A SCHEDULE<\/strong><\/h2>\n

PUERTO RICO CONVENTION CENTER, SAN JUAN, PR<\/strong><\/h2>\n

TUESDAY, JULY 21, 2026<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]SESSION A<\/strong>
Ballroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING<\/strong>[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]9:05 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTION<\/strong>
Chair: Jeffrey Warner (Northrop Grumman)[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]A-1<\/strong>
9:10 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Low-loss Vertical \u03b2-Ga2O3 High-Power Diodes with Engineered Contacts: SEB Assessment and Field-Plate Effects<\/strong><\/p>\n

S. Islam1<\/sup>, P. Das2<\/sup>, D. Ball1<\/sup>, J. Speck3<\/sup>, E. Farzana2<\/sup>, D. Fleetwood1<\/sup>, R. Schrimpf1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. Iowa State University, USA   3. University of California, USA<\/p>\n

Vertical \u03b2-Ga\u2082O\u2083 diodes with engineered Pt\/PtO\u2093\/thin-Pt Schottky contacts exhibit reduced turn-on voltage. Single-event burnout is experimentally evaluated on structures with and without field plates. TCAD analysis provides insight into the responsible mechanisms.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]A-2<\/strong>
9:25 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Effect of Multi-Soft-Program Scheme on Single-Event Upset in 3D Charge-Trap NAND Flash Memory<\/strong><\/p>\n

J. Park1<\/sup>, V. Shastry1<\/sup>, M. Breeding2<\/sup>, S. Yi1<\/sup><\/p>\n

1. Texas A&M University, USA   2. Sandia National Laboratories, USA<\/p>\n

Effects of multi-soft-program on retention and single-event upset in 176-layer 3D charge- trap (CT) NAND flash are investigated, clarifying the influence of trap occupancy in the CT layer on retention characteristics and heavy-ion-induced threshold voltage loss.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]A-3<\/strong>
9:40 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Angular Effects on Single-Event Vulnerability at the 3- and 5-nm Bulk FinFET Nodes<\/strong><\/p>\n

J. Kronenberg1<\/sup>, S. Tolson1<\/sup>, X. Zhao1<\/sup>, Y. Xiong1<\/sup>, N. Pieper1<\/sup>, D. Ball1<\/sup>, B. Bhuva1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

Angular single-event effects at 3- and 5-nm bulk FinFET nodes are presented. The relationship between angular incidence and SE vulnerability is explored as a function of technology scaling, critical charge, and particle LET.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]A-4<\/strong>
9:55 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Study of Angular and Material Dependence of Single Event Effects in Enhancement- mode GaN HEMTs<\/strong><\/p>\n

P. Maloney1<\/sup>, A. Billa1<\/sup>, B. Bolton1<\/sup>, S. Hankinson1<\/sup>, S. Shorina1<\/sup>, H. Gingold1<\/sup>, J. Gray2<\/sup>, L. Massengill2<\/sup>, D. McMorrow3<\/sup>, D. Fleetwood2<\/sup>, E. Zhang1<\/sup><\/p>\n

1. University of Central Florida, USA   2. Vanderbilt University, USA   3. US Naval Research Laboratory, USA<\/p>\n

Heavy-ion testing of enhancement-mode GaN HEMTs shows SELC and SEB thresholds depend strongly on incident angle and overlying metallization. SEM and SRIM reveal Cu interconnects amplify charge deposition, explaining reduced thresholds at near-normal incidence.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

POSTER SESSION A<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

SoC Processor and Memory Proton Testing Methodology and Results for the AMD Versal ACAP<\/strong><\/p>\n

G. Smith1<\/sup>, M. Wirthlin1<\/sup>, M. Brigham1<\/sup><\/p>\n

1. Brigham Young University, USA<\/p>\n

A methodology is presented for testing multiple processors and 18 memories simultaneously on the Versal ACAP during a proton irradiation test. Post-run fault analysis is performed to identify the root cause of all processor failures.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Impact of Structural and Numerical Constraints on Single-Event Upsets in ResNet50 Neural Networks<\/strong><\/p>\n

G. Qiao1<\/sup>, S. Feng1<\/sup>, G. Yu1<\/sup>, M. Tao2<\/sup>, Y. Chi1<\/sup>, J. Chen1<\/sup>, D. Luo1<\/sup>, J. Yang2<\/sup>, B. Liang1<\/sup><\/p>\n

1. National University of Defense Technology, China   2. Hunan University, China<\/p>\n

Using software fault injection and pulsed laser experiments, this work analyzes ResNet50 failure behaviors under radiation, showing that combined structural and numerical constraints significantly enhance model robustness on AI chip.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Heavy-Ion Testing of the AMD Versal Network-on-Chip<\/strong><\/p>\n

P. Drum1<\/sup>, A. George1<\/sup>, M. Cannon2<\/sup>, A. Kumar2<\/sup>, N. Myers2<\/sup>, A. Tabaczynski2<\/sup>, D. Lee2<\/sup>, N. Matter2<\/sup>, P. Thelen2<\/sup><\/p>\n

1. University of Pittsburgh, USA   2. Sandia National Laboratories, USA<\/p>\n

Heavy-ion tests were performed on the Versal Network-on-Chip to determine cross sections and common errors for two general-use designs. Common errors included correctable parity errors and packet misrouting errors.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Proton Radiation Testing of AI Models on the AMD Versal Deep Learning Processing Unit (DPU)<\/strong><\/p>\n

J. Brown1<\/sup>, H. Allan1<\/sup>, J. Goeders1<\/sup>, M. Wirthlin1<\/sup><\/p>\n

1. Brigham Young University, USA<\/p>\n

Fault injection and proton radiation testing of YOLO and ResNet models on the AMD Versal DPU reveal six failure modes, model-dependent error rates, and the predictive capability of fault injection<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Evaluation of Single-Event Effects on Swin Transformer Tracking Model for Sub-20nm FinFET-based AI Chips<\/strong><\/p>\n

Z. Li1<\/sup>, S. Feng1<\/sup>, G. Yu1<\/sup>, M. Tao2<\/sup>, Y. Chi1<\/sup>, J. Chen1<\/sup>, D. Luo1<\/sup>, J. Yang2<\/sup>, Y. Liu1<\/sup>, F. Luo1<\/sup>, J. Mo1<\/sup>, B. Liang1<\/sup><\/p>\n

1. National University of Defense Technology, China   2. Hunan University, China<\/p>\n

Pulsed laser and heavy-ion experiments are conducted on a Swin-Transformer-based edge tracking system. Different structural variants exhibit distinct SEFI\/SEU occurrence characteristics, revealing structure-dependent reliability behaviors under radiation- induced single-event effects. \u2013<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-6L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Assessment of RISC-V Microprocessors in SRAM-Based FPGA Under Heavy-Ion-Induced Faults<\/strong><\/p>\n

F. Lima Kastensmidt1<\/sup>, F. Benevenuti1<\/sup>, N. H. Medina2<\/sup>, V. P. Aguiar2<\/sup>, S. Alberton2<\/sup><\/p>\n

1. Federal University of Rio Grande do Sul, Brazil   2. University of Sao Paulo, Brazil<\/p>\n

This work evaluates three different RISC-V soft-core microprocessors implemented in SRAM-based Field-Programmable Gate Array (FPGA) under heavy ions irradiation. We investigate trade-offs between computing performance and reliability using modular redundancy and configuration memory scrubbing.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n","protected":false},"excerpt":{"rendered":"

[vc_row][vc_column][vc_column_text] 2026 IEEE NSREC TECHNICAL PROGRAM SESSION A SCHEDULE PUERTO RICO CONVENTION CENTER, SAN JUAN, PR TUESDAY, JULY 21, 2026 [\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]SESSION ABallroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]9:05 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTIONChair: Jeffrey Warner (Northrop Grumman)[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]A-19:10 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text] Low-loss Vertical \u03b2-Ga2O3 High-Power Diodes with Engineered Contacts: SEB Assessment and Field-Plate… Continue reading Technical Program 2026 – Session A<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-8535","page","type-page","status-publish","hentry","entry"],"acf":{"page_header":[{"ID":8749,"post_author":"2","post_date":"2025-09-04 20:34:04","post_date_gmt":"2025-09-04 20:34:04","post_content":"[vc_row][vc_column][vc_empty_space height=\"125px\"][\/vc_column][\/vc_row][vc_row][vc_column width=\"1\/2\"][vc_column_text]\r\n

IEEE Nuclear & Space Radiation Effects Conference<\/h1>\r\n

JULY 20th-24th, 2026<\/h2>\r\n

San Juan, Puerto Rico, USA<\/h2>\r\n[\/vc_column_text][vc_column_text]\r\n
Follow NSREC [nsrec_social_icons]<\/div>\r\n[\/vc_column_text][vc_empty_space height=\"6px\"][vc_btn title=\"NSREC Brochure\" style=\"3d\" color=\"warning\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F07%2F2026_NSRECBrochure_Final_V2e.pdf|target:_blank\"][vc_empty_space height=\"6px\"][vc_btn title=\"Schedule at a Glance\" style=\"3d\" color=\"inverse\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fschedule-at-a-glance%2F|target:_blank\"][\/vc_column][vc_column width=\"1\/4\"][vc_single_image image=\"8767\" style=\"vc_box_rounded\"][vc_empty_space height=\"16px\"][vc_btn title=\"Chair's Invitation\" color=\"inverse\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2025%2F11%2FInvitation-Letter.pdf|title:Chair%E2%80%99s%20Invitation|target:_blank\"][vc_separator][\/vc_column][vc_column width=\"1\/4\"][vc_empty_space height=\"290px\"][vc_btn title=\"Short Course Description\" color=\"danger\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F04%2FNSREC-2026ShortCourse-FLYER_v6-Final.pdf|title:Short%20Course%20Description|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Supporter and Exhibitor Registration\" color=\"danger\" link=\"url:https%3A%2F%2Fcvent.me%2FvlPo1L|title:Supporter%20Registration|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Hotel Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fbook.passkey.com%2Fevent%2F51004057%2Fowner%2F5772432%2Fhome%3Futm_campaign%3D299386963c%26mobile%3Dtrue%26dw%3D414|title:Hotel%20Registration%20|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Conference Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fcvent.me%2FaW0lgE|title:Conference%20Registration|target:_blank\"][\/vc_column][\/vc_row][vc_row][vc_column][vc_empty_space height=\"16px\"][\/vc_column][\/vc_row][vc_row][vc_column][\/vc_column][\/vc_row]","post_title":"Main Header 2026","post_excerpt":"","post_status":"publish","comment_status":"closed","ping_status":"closed","post_password":"","post_name":"main-header-2026","to_ping":"","pinged":"","post_modified":"2026-07-19 12:34:21","post_modified_gmt":"2026-07-19 12:34:21","post_content_filtered":"","post_parent":0,"guid":"https:\/\/www.nsrec.com\/?post_type=headers&p=8749","menu_order":0,"post_type":"headers","post_mime_type":"","comment_count":"0","filter":"raw"}]},"_links":{"self":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8535","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/comments?post=8535"}],"version-history":[{"count":5,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8535\/revisions"}],"predecessor-version":[{"id":9316,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8535\/revisions\/9316"}],"wp:attachment":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/media?parent=8535"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}