{"id":8539,"date":"2025-05-12T21:26:25","date_gmt":"2025-05-12T21:26:25","guid":{"rendered":"https:\/\/www.nsrec.com\/?page_id=8539"},"modified":"2026-06-25T01:30:37","modified_gmt":"2026-06-25T01:30:37","slug":"session-b","status":"publish","type":"page","link":"https:\/\/www.nsrec.com\/session-b\/","title":{"rendered":"Technical Program 2026 – Session B"},"content":{"rendered":"[vc_row][vc_column][vc_column_text]\n

2026 IEEE NSREC TECHNICAL PROGRAM<\/strong><\/h2>\n

SESSION B SCHEDULE<\/strong><\/h2>\n

PUERTO RICO CONVENTION CENTER, SAN JUAN, PR<\/strong><\/h2>\n

TUESDAY, JULY 21, 2026<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]SESSION B<\/strong>
Ballroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS<\/strong>[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]10:40 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTION<\/strong>
Chair: Ruben Garc\u00eda Al\u00eda (CERN)[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]B-1<\/strong>
10:45 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

LET and Orientation Dependent Angular SEU in 12-nm Bulk FinFET Flip-Flops<\/strong><\/p>\n

X. Lu1<\/sup>, J. Debnath2<\/sup>, E. Zhang2<\/sup>, J. Xing1<\/sup>, C. Elash1<\/sup>, D. Ramaswami1<\/sup>, Q. Chen1<\/sup>, L. Chen1<\/sup><\/p>\n

1. University of Saskatchewan, Canada   2. University of Central Florida, USA<\/p>\n

Angular heavy-ion SEU cross-sections were measured for 12-nm FinFET flip-flops at 0\u00b0 and 60\u00b0 across multiple LETs and fin orientations. Results show increased \u03c3SEU under tilt, demonstrating scaling-dependent worst-case conditions and limitations of normal- incidence testing.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]B-2<\/strong>
11:00 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Angular Dependence of Single Event Upsets in 3D NAND Flash Arrays with Very High Energy Ion Beams<\/strong><\/p>\n

M. Bagatin1<\/sup>, S. Beltrami2<\/sup>, A. Benvenuti2<\/sup>, A. Waets3<\/sup>, N. Emriskova3<\/sup>, R. Garcia3<\/sup>, S. Gerardin1<\/sup><\/p>\n

1. University of Padova, Italy   2. Micron Technology and Products Group, Italy   3. CERN, Switzerland<\/p>\n

The effects of very-high-energy ions on 3D NAND Flash arrays are investigated. Cross sections at grazing angles, the spatial distribution, and clustering of radiation-induced errors are analyzed by exploiting the unique capabilities of high-energy beams.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]B-3<\/strong>
11:15 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Reliability of Processing-in-Memory Accelerators for Deep Neural Networks Inference<\/strong><\/p>\n

M. Wagner1<\/sup>, F. Santos1<\/sup>, M. Traiola1<\/sup>, P. Rech2<\/sup>, A. Kritikakou1<\/sup><\/p>\n

1. INRIA, France   2. University of Trento, Italy<\/p>\n

We present the first proton-irradiation campaign for a commercial processing-in- memory (PIM) AI accelerator executing end-to-end DNN inference. We report results from 10 DNN models and a microbenchmark, showing higher error criticality than conventional accelerators.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]B-4<\/strong>
11:30 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Single-Event Leakage Current and Burnout in High-Voltage GaN and SiC PiN Diodes: A Comparative Analysis<\/strong><\/p>\n

G. Mayberry1<\/sup>, X. Zhao2<\/sup>, H. Gingold3<\/sup>, P. Maloney3<\/sup>, S. Islam1<\/sup>, A. Sengupta4<\/sup>, X. Shen5<\/sup>, A. Senarath1<\/sup>, O. Meilander1<\/sup>, B. Zhang2<\/sup>, S. Hankinson3<\/sup>, B. Bolton3<\/sup>, W. Hubbard6<\/sup>, S. Kosier1<\/sup>, T. Roy2<\/sup>, E. Zhang3<\/sup>, D. Fleetwood1<\/sup>, S. Pantelides1<\/sup>, M. Ebrish1<\/sup>, R. Schrimpf1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. Duke University, USA   3. University of Central Florida, USA   4. DLR, Germany   5. University of Memphis, USA   6. NanoElectronic Imaging, Inc., USA<\/p>\n

High-voltage GaN and SiC vertical PiN diodes were tested for SEEs at similar voltages for a wide LET range. The lower SEE tolerance of GaN is attributed to lower defect- multiplication activation energies.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]B-5<\/strong>
11:45 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Mechanism of Heavy-Ion Induced Leakage Current in GaN HEMTs Buffer Layers<\/strong><\/p>\n

J. Gray1<\/sup>, S. Shorina2<\/sup>, J. Vielmette1<\/sup>, D. Ball1<\/sup>, E. Zhang2<\/sup>, P. Maloney2<\/sup>, H. Gingold2<\/sup>, B. Bolton2<\/sup>, S. Hankinson2<\/sup>, A. Billa2<\/sup>, H. Parra2<\/sup>, J. Trippe1<\/sup>, M. Alles1<\/sup>, S. Kosier1<\/sup>, D. Fleetwood1<\/sup>, R. Schrimpf1<\/sup>, L. Massengill1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. University of Central Florida, USA<\/p>\n

Heavy ion irradiation enhances leakage currents in GaN-based HEMTs. Experimental analysis confirms a permanent drain-to-source leakage path through the buffer layer under the gate, enabled by defect-assisted hopping.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]B-6<\/strong>
12:00 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Single-Event Burnout of AlN Diodes under Heavy-ion Irradiation<\/strong><\/p>\n

C. Qui\u00f1ones1<\/sup>, J. Osheroff2<\/sup>, P. Reddy3<\/sup>, S. Mita3<\/sup>, R. Kirste3<\/sup>, R. Collazo1<\/sup>, Z. Sitar1<\/sup><\/p>\n

1. North Carolina State University, USA   2. NASA Goddard Space Flight Center, USA   3. Adroit Materials, USA<\/p>\n

Single-event burnout was observed in AlN Schottky barrier and p-n junction diodes under heavy-ion irradiation. Burnout thresholds decreased with increasing ion LET, similar to trends in other wide-bandgap semiconductors.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

POSTER SESSION B<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Microdose-Induced Stuck Bits in 7-nm FinFET SRAMs<\/strong><\/p>\n

M. Gorbunov1<\/sup>, E. Timokhin1<\/sup>, J. Weijers1<\/sup>, M. Van de Burgwal1<\/sup>, L. Berti1<\/sup>, G. Thys1<\/sup>, T. Vervecken2<\/sup>, D. Van Nuffel2<\/sup>, T. Schulte2<\/sup>, J. Vanden Berk2<\/sup>, D. Geys2<\/sup>, S. Bounasser3<\/sup>, B. Glass3<\/sup><\/p>\n

1. IMEC, Belgium   2. Magics Technologies NV, Belgium   3. ESA, Netherlands<\/p>\n

During the heavy-ion test campaign, we observed stuck bits in 7-nm FinFET SRAM blocks with certain bitcell types. The analysis and simulation results indicated that the microdose is the primary mechanism at typical fluence levels.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Characterization of Spatial Variability of Single-Event Latch-up in a 14-nm FinFET Technology<\/strong><\/p>\n

S. Zhao1<\/sup>, X. Li1<\/sup>, D. Zhang1<\/sup>, B. Li1<\/sup>, R. Tang1<\/sup>, Y. Gao1<\/sup>, C. Yang1<\/sup>, P. Lu2<\/sup>, L. Shu1<\/sup>, J. Bu1<\/sup>, J. Gao1<\/sup><\/p>\n

1. Institute of Microelectronics of the Chinese Academy of Sciences, China   2. Ocean University of China, China<\/p>\n

The significant spatial heterogeneity of SEL characteristics is revealed in a 14-nm FinFET multi-core SoC through heavy-ion and pulsed-laser experiments. A differentiated hardening strategy linking sensitivity to body-tie distance is proposed to provide design guidance.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Effects of Electrical Program\/Erase Cycling on the Single-Event Response of 65-nm SONOS Charge-Trap NOR Flash Memory<\/strong><\/p>\n

A. Hubbard1<\/sup>, A. Murali2<\/sup>, H. Hunnicutt1<\/sup>, T. Peyton1<\/sup>, B. Ray2<\/sup>, A. Ildefonso1<\/sup>, D. Loveless1<\/sup><\/p>\n

1. Indiana University Bloomington, USA   2. Colorado State University, USA<\/p>\n

Heavy\u2011ion testing on 65\u2011nm MirrorBit SONOS Charge-Trap NOR flash memory showed that program\/erase\u2011cycled sectors exhibit significantly lower bit\u2011normalized SEU cross- sections compared to single\u2011programmed sectors.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Mechanism Study of Heavy-Ion SEEs in a 12-bit SAR ADC in 22-nm FD-SOI<\/strong><\/p>\n

J. Zhao1<\/sup>, Z. Li1,2<\/sup>, Q. Ma1<\/sup>, Y. Qing1<\/sup>, M. Gorbunov2<\/sup>, M. Zhang1<\/sup>, E. Tackx1<\/sup>, J. Prinzie1<\/sup>, P. Leroux1<\/sup><\/p>\n

1. KU Leuven, Belgium   2. IMEC, Belgium<\/p>\n

22-nm FD-SOI SAR ADC heavy-ion tests reveal outliers at LET 27.5\u201360.2. Errors map to sampling, control, comparator, and flip-flop SEEs. As cross-section rises, signatures migrate from single-mechanism to arbitrary multi-bit and mixed-mechanism errors<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Reliability of Image Classification and Object Detection on Embedded Systolic Arrays<\/strong><\/p>\n

P. Foletto Pimenta1<\/sup>, S. Savazzi2<\/sup>, E. Verroi3<\/sup>, M. Pullia2<\/sup>, F. Santos4<\/sup>, P. Rech1<\/sup><\/p>\n

1. University of Trento, Italy   2. Centro Nazionale di Adroterapia Oncologica, Italy   3. Trento Institute for Fundamental Physics and Applications, Italy   4. INRIA, France<\/p>\n

We investigate the impact of 200 MeV protons on convolutions and prediction tasks executed on Tensor Processing Units. Kernel size does not impact output correctness while detection shows significantly more critical errors than classification.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-6<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Characterization of Latent Gate Damage and Single-Event Leakage Current by Gate Charge Measurements of Irradiated Silicon Carbide Power MOSFETs<\/strong><\/p>\n

A. Sengupta1,2<\/sup>, R. Cadena2<\/sup>, J. Vielmette2<\/sup>, S. Islam2<\/sup>, X. Zhao3<\/sup>, D. Bal2<\/sup>, A. Sternberg2<\/sup>, J. Osheroff4<\/sup>, J. Hutson5<\/sup>, M. Alles2<\/sup>, K. Galloway2<\/sup>, A. Witulski2<\/sup>, R. Schrimpf2<\/sup>, S. Kosier2<\/sup><\/p>\n

1. DLR, Germany   2. Vanderbilt University, USA   3. Duke University, USA   4. NASA Goddard Space Flight Center, USA   5. Lipscomb University, USA<\/p>\n

Gate charge measurements reveal that latent gate damage and drain-gate single-event leakage current in SiC MOSFETs are strongly dependent on the particle energy and drain bias during irradiation and are precursors to single-event gate rupture.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n","protected":false},"excerpt":{"rendered":"

[vc_row][vc_column][vc_column_text] 2026 IEEE NSREC TECHNICAL PROGRAM SESSION B SCHEDULE PUERTO RICO CONVENTION CENTER, SAN JUAN, PR TUESDAY, JULY 21, 2026 [\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]SESSION BBallroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]10:40 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTIONChair: Ruben Garc\u00eda Al\u00eda (CERN)[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]B-110:45 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text] LET and Orientation Dependent Angular SEU in 12-nm Bulk FinFET Flip-Flops… Continue reading Technical Program 2026 – Session B<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-8539","page","type-page","status-publish","hentry","entry"],"acf":{"page_header":[{"ID":8749,"post_author":"2","post_date":"2025-09-04 20:34:04","post_date_gmt":"2025-09-04 20:34:04","post_content":"[vc_row][vc_column][vc_empty_space height=\"125px\"][\/vc_column][\/vc_row][vc_row][vc_column width=\"1\/2\"][vc_column_text]\r\n

IEEE Nuclear & Space Radiation Effects Conference<\/h1>\r\n

JULY 20th-24th, 2026<\/h2>\r\n

San Juan, Puerto Rico, USA<\/h2>\r\n[\/vc_column_text][vc_column_text]\r\n
Follow NSREC [nsrec_social_icons]<\/div>\r\n[\/vc_column_text][vc_empty_space height=\"6px\"][vc_btn title=\"NSREC Brochure\" style=\"3d\" color=\"warning\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F07%2F2026_NSRECBrochure_Final_V2e.pdf|target:_blank\"][vc_empty_space height=\"6px\"][vc_btn title=\"Schedule at a Glance\" style=\"3d\" color=\"inverse\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fschedule-at-a-glance%2F|target:_blank\"][\/vc_column][vc_column width=\"1\/4\"][vc_single_image image=\"8767\" style=\"vc_box_rounded\"][vc_empty_space height=\"16px\"][vc_btn title=\"Chair's Invitation\" color=\"inverse\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2025%2F11%2FInvitation-Letter.pdf|title:Chair%E2%80%99s%20Invitation|target:_blank\"][vc_separator][\/vc_column][vc_column width=\"1\/4\"][vc_empty_space height=\"290px\"][vc_btn title=\"Short Course Description\" color=\"danger\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F04%2FNSREC-2026ShortCourse-FLYER_v6-Final.pdf|title:Short%20Course%20Description|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Supporter and Exhibitor Registration\" color=\"danger\" link=\"url:https%3A%2F%2Fcvent.me%2FvlPo1L|title:Supporter%20Registration|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Hotel Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fbook.passkey.com%2Fevent%2F51004057%2Fowner%2F5772432%2Fhome%3Futm_campaign%3D299386963c%26mobile%3Dtrue%26dw%3D414|title:Hotel%20Registration%20|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Conference Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fcvent.me%2FaW0lgE|title:Conference%20Registration|target:_blank\"][\/vc_column][\/vc_row][vc_row][vc_column][vc_empty_space height=\"16px\"][\/vc_column][\/vc_row][vc_row][vc_column][\/vc_column][\/vc_row]","post_title":"Main Header 2026","post_excerpt":"","post_status":"publish","comment_status":"closed","ping_status":"closed","post_password":"","post_name":"main-header-2026","to_ping":"","pinged":"","post_modified":"2026-07-19 12:34:21","post_modified_gmt":"2026-07-19 12:34:21","post_content_filtered":"","post_parent":0,"guid":"https:\/\/www.nsrec.com\/?post_type=headers&p=8749","menu_order":0,"post_type":"headers","post_mime_type":"","comment_count":"0","filter":"raw"}]},"_links":{"self":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8539","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/comments?post=8539"}],"version-history":[{"count":5,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8539\/revisions"}],"predecessor-version":[{"id":9333,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8539\/revisions\/9333"}],"wp:attachment":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/media?parent=8539"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}