{"id":8541,"date":"2025-05-12T21:35:55","date_gmt":"2025-05-12T21:35:55","guid":{"rendered":"https:\/\/www.nsrec.com\/?page_id=8541"},"modified":"2026-06-25T01:30:37","modified_gmt":"2026-06-25T01:30:37","slug":"session-c","status":"publish","type":"page","link":"https:\/\/www.nsrec.com\/session-c\/","title":{"rendered":"Technical Program 2026 – Session C"},"content":{"rendered":"[vc_row][vc_column][vc_column_text]\n

2026 IEEE NSREC TECHNICAL PROGRAM<\/strong><\/h2>\n

SESSION C SCHEDULE<\/strong><\/h2>\n

PUERTO RICO CONVENTION CENTER, SAN JUAN, PR<\/strong><\/h2>\n

TUESDAY, JULY 21, 2026<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]SESSION C<\/strong>
Ballroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]PHOTONICS DEVICES AND INTEGRATED CIRCUITS<\/strong>[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]2:15 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTION<\/strong>
Chair: Julien Mekki (CNES)[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]C-1<\/strong>
2:20 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Dose Rate and Temperature Effects on the Radiation-Induced Attenuation of H2-loaded Ge-doped Optical Fibers<\/strong><\/p>\n

A. Morana1<\/sup>, S. Acid1<\/sup>, E. Marin1<\/sup>, A. Boukenter1<\/sup>, Y. Ouerdane1<\/sup>, S. Girard1<\/sup><\/p>\n

1. Universit\u00e9 de Saint-Etienne, France<\/p>\n

We study the dose-rate effect on the RIA of H2-loaded Ge-doped fibers up to a dose of 100 kGy, to better understand the influence of the molecular hydrogen, that seems to stabilize the defects.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]C-2<\/strong>
2:35 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Real time Responses of COTS Optical Fibers exposed to X-Ray Pulses<\/strong><\/p>\n

M. Roche1<\/sup>, O. Duhamel1<\/sup>, D. Lambert1<\/sup>, M. Gaillardin2<\/sup>, S. Girard3<\/sup>, P. Paillet1<\/sup><\/p>\n

1. CEA\/CESTA, France   2. CEA\/Gramat, France   3. Universit\u00e9 de Saint-Etienne, France<\/p>\n

We investigate the transient responses of commercial off-the-shelf (COTS) optical fibers under pulsed X-rays with high dose rate. We highlight a large diversity of the fiber response due to different doping strategies.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]C-3<\/strong>
2:50 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Gamma Irradiation Total-Ionizing and Displacement Damage Effects in a Quanta Image Sensor<\/strong><\/p>\n

J. Krynski1,2<\/sup>, A. Salih-Alj1<\/sup>, A. Le Roch2<\/sup>, V. Bernard2<\/sup>, V. Lalucaa2<\/sup>, C. Virmontois2<\/sup>, V. Goiffon1<\/sup><\/p>\n

1. ISAE-SUPAERO, France   2. CNES, France<\/p>\n

A gamma irradiation campaign on a photon-counting image sensor reveals a degradation in noise characteristics and appearance of point defects. Many pixels\u2019 dark currents are reduced after gamma exposure, showing a unexpected susceptibility to TID. \u2013<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]C-4<\/strong>
3:35 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation Effects on Nanocrystal-Based Logarithmic Short Wavelength Infrared Image Sensor<\/strong><\/p>\n

A. Neyret1<\/sup>-4, P. Giudicelli-Vernet1,3<\/sup>, S. Demiguel2<\/sup>, S. Masseno1<\/sup>, J. Belloir3<\/sup>, E. Lhuillier4<\/sup>, V. Goiffon1<\/sup><\/p>\n

1. ISAE-SUPAERO, France   2. Thales Alenia Space, France   3. CNES, France   4. INSP CNRS – Sorbonne Universit\u00e9, France<\/p>\n

Radiation effects on Lead Sulfide nanocrystal-based short-wavelength infrared open pixel logarithmic cameras are tested. Imaging performance and device characteristics are tracked upon proton irradiation, demonstrating ionizing and non-ionizing tolerance and suitability for space environments.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]C-5<\/strong>
3:50 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation-Induced Attenuation in Silicon Photonics Waveguides<\/strong><\/p>\n

D. Alfiero1<\/sup>, L. Olantera1<\/sup>, C. Scarcella1<\/sup>, S. Detraz1<\/sup>, J. Troska1<\/sup><\/p>\n

1. CERN, Switzerland<\/p>\n

Attenuation changes in Si-photonics waveguides were characterized under displacement damage and ionizing doses relevant to high-energy physics experiments. All waveguide types showed increased attenuation; O-band waveguides were most sensitive, with 0.65dB\/mm after 7\u00d71015n\/cm2 neutron fluence.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]C-6<\/strong>
4:05 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Electrical vs. Optical Degradation due to Cumulative Dose in Vertical Phototransistors<\/strong><\/p>\n

B. Ringel1<\/sup>, J. Heimerl1<\/sup>, D. Sam1<\/sup>, M. Hosseinzadeh1<\/sup>, Q. Parker1<\/sup>, J. Teng2<\/sup>, J. Cressler1<\/sup><\/p>\n

1. Georgia Institute of Technology, USA   2. The Aerospace Corporation, USA<\/p>\n

TID responses of vertical phototransistors based on SiGe-HBTs are evaluated following exposure using a 60Co source. Differences in electrical and optical degradation are observed, highlighting electrical-only analysis is not sufficient for hardness assurance of photodetectors.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

POSTER SESSION C<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Total Ionizing Dose Effects on the Dark Count Rate in 110 nm CMOS SPADs<\/strong><\/p>\n

L. Ratti1<\/sup>, A. Burdyko2<\/sup>, M. Campajola3<\/sup>, G. Collazuol4<\/sup>, M. Da rocha rolo5<\/sup>, D. Falchieri6<\/sup>, G. Fiorillo3<\/sup>, T. Floris1<\/sup>, F. Licciulli7<\/sup>, M. Mazziotta7<\/sup>, L. Pancheri8<\/sup>, L. Rignanese6<\/sup>, R. Santoro2<\/sup>, F. Shojaei1<\/sup>, C. Vacchi1<\/sup><\/p>\n

1. Universit\u00e0 degli Studi di Pavia and INFN Pavia, Italy   2. Universit\u00e0 degli Studi dell\u2019Insubria and INFN Milano, Italy   3. Universit\u00e0 degli Studi di Napoli Federico II and INFN Napoli, Italy   4. Universit\u00e0 degli Studi di Padova and INFN Padova, Italy   5. INFN Torino, Italy   6. INFN Bologna, Italy   7. INFN Bari, Italy   8. Universit\u00e0 degli Studi di Trento and INFN TIFPA, Italy<\/p>\n

SPADs fabricated in a 110 nm CMOS technology, with different active areas and quenching features, are irradiated with 10 keV X-rays up to a total ionizing dose of 10 Mrad(SiO2). Effects on DCR are investigated.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Effects of annealing on Ga-Free T2SL Infrared Detector<\/strong><\/p>\n

H. Mezouar1<\/sup>, A. Michez2<\/sup>, M. Tornay3<\/sup>, C. Cervera4<\/sup>, P. Christol3<\/sup><\/p>\n

1. University of Montpellier, France   2. DELPHEA, France   3. University Of Montpellier, France   4. University of Grenobles-Alpes and CEA-LETI, France<\/p>\n

In this paper, we investigate the effect of thermal annealing on Ga-free InAs\/InAsSb type- II superlattice (T2SL) midwave infrared barrier photodetectors irradiated with 60 MeV protons at fluences up to 8×1011 H+\/cm\u00b2.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation-Induced Charge Collection Dynamics in Short-Wavelength P+-N Silicon Avalanche Photodiodes<\/strong><\/p>\n

N. Karom1<\/sup>, S. Ball1<\/sup>, E. Teo1<\/sup>, A. Veluri1<\/sup>, P. Harris1<\/sup>, M. Mccurdy1<\/sup>, R. Schrimpf1<\/sup>, D. Fleetwood1<\/sup>, J. Trippe1<\/sup>, R. Nederlander2<\/sup>, R. Reed1<\/sup>, S. Weiss1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. Aegis Aerospace, USA<\/p>\n

P+-N Si-APDs show significant gain decrease under alpha irradiation compared to optical excitation. Data analysis and TCAD simulations show this results from significant increases in carrier recombination relative to avalanche generation with increasing EHP density.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Total Ionizing Dose Effects on High-Speed Silicon Integrated Photonic Mach-Zehnder Modulators<\/strong><\/p>\n

K. Arnold1<\/sup>, N. Karom1<\/sup>, J. Slaby2<\/sup>, A. Veluri1<\/sup>, A. Kaylor2<\/sup>, A. Sternberg1<\/sup>, D. Ball1<\/sup>, R. Schrimpf1<\/sup>, D. Fleetwood1<\/sup>, S. Ralph2<\/sup>, R. Reed1<\/sup>, S. Weiss1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. Georgia Institute of Technology, USA<\/p>\n

Impacts of 10-keV X-ray irradiation on high-speed electro-optic response are observed in silicon Mach-Zehnder modulators. More than 50% electro-optic performance degradation is observed when devices are irradiated under active bias. Underlying ionization mechanisms are examined.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-5L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation-Induced Effects on Silicon Photonic Micro-Ring Modulators for Space Applications<\/strong><\/p>\n

A. Veluri1<\/sup>, N. Karom1<\/sup>, R. Schrimpf1<\/sup>, D. Fleetwood1<\/sup>, R. Reed1<\/sup>, S. Weiss1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

Silicon photonic micro-ring modulators maintain robust performance under 10-keV X-ray irradiation at space-relevant doses. Static modulation efficiency and high-speed electro-optic performance do not degrade, despite radiation-induced resonance wavelength shifts, confirming viability for space applications.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n","protected":false},"excerpt":{"rendered":"

[vc_row][vc_column][vc_column_text] 2026 IEEE NSREC TECHNICAL PROGRAM SESSION C SCHEDULE PUERTO RICO CONVENTION CENTER, SAN JUAN, PR TUESDAY, JULY 21, 2026 [\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]SESSION CBallroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]PHOTONICS DEVICES AND INTEGRATED CIRCUITS[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]2:15 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTIONChair: Julien Mekki (CNES)[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]C-12:20 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text] Dose Rate and Temperature Effects on the Radiation-Induced Attenuation of H2-loaded Ge-doped Optical… Continue reading Technical Program 2026 – Session C<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-8541","page","type-page","status-publish","hentry","entry"],"acf":{"page_header":[{"ID":8749,"post_author":"2","post_date":"2025-09-04 20:34:04","post_date_gmt":"2025-09-04 20:34:04","post_content":"[vc_row][vc_column][vc_empty_space height=\"125px\"][\/vc_column][\/vc_row][vc_row][vc_column width=\"1\/2\"][vc_column_text]\r\n

IEEE Nuclear & Space Radiation Effects Conference<\/h1>\r\n

JULY 20th-24th, 2026<\/h2>\r\n

San Juan, Puerto Rico, USA<\/h2>\r\n[\/vc_column_text][vc_column_text]\r\n
Follow NSREC [nsrec_social_icons]<\/div>\r\n[\/vc_column_text][vc_empty_space height=\"6px\"][vc_btn title=\"NSREC Brochure\" style=\"3d\" color=\"warning\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F07%2F2026_NSRECBrochure_Final_V2e.pdf|target:_blank\"][vc_empty_space height=\"6px\"][vc_btn title=\"Schedule at a Glance\" style=\"3d\" color=\"inverse\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fschedule-at-a-glance%2F|target:_blank\"][\/vc_column][vc_column width=\"1\/4\"][vc_single_image image=\"8767\" style=\"vc_box_rounded\"][vc_empty_space height=\"16px\"][vc_btn title=\"Chair's Invitation\" color=\"inverse\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2025%2F11%2FInvitation-Letter.pdf|title:Chair%E2%80%99s%20Invitation|target:_blank\"][vc_separator][\/vc_column][vc_column width=\"1\/4\"][vc_empty_space height=\"290px\"][vc_btn title=\"Short Course Description\" color=\"danger\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F04%2FNSREC-2026ShortCourse-FLYER_v6-Final.pdf|title:Short%20Course%20Description|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Supporter and Exhibitor Registration\" color=\"danger\" link=\"url:https%3A%2F%2Fcvent.me%2FvlPo1L|title:Supporter%20Registration|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Hotel Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fbook.passkey.com%2Fevent%2F51004057%2Fowner%2F5772432%2Fhome%3Futm_campaign%3D299386963c%26mobile%3Dtrue%26dw%3D414|title:Hotel%20Registration%20|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Conference Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fcvent.me%2FaW0lgE|title:Conference%20Registration|target:_blank\"][\/vc_column][\/vc_row][vc_row][vc_column][vc_empty_space height=\"16px\"][\/vc_column][\/vc_row][vc_row][vc_column][\/vc_column][\/vc_row]","post_title":"Main Header 2026","post_excerpt":"","post_status":"publish","comment_status":"closed","ping_status":"closed","post_password":"","post_name":"main-header-2026","to_ping":"","pinged":"","post_modified":"2026-07-19 12:34:21","post_modified_gmt":"2026-07-19 12:34:21","post_content_filtered":"","post_parent":0,"guid":"https:\/\/www.nsrec.com\/?post_type=headers&p=8749","menu_order":0,"post_type":"headers","post_mime_type":"","comment_count":"0","filter":"raw"}]},"_links":{"self":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8541","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/comments?post=8541"}],"version-history":[{"count":5,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8541\/revisions"}],"predecessor-version":[{"id":9318,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8541\/revisions\/9318"}],"wp:attachment":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/media?parent=8541"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}