{"id":8549,"date":"2025-05-12T22:37:18","date_gmt":"2025-05-12T22:37:18","guid":{"rendered":"https:\/\/www.nsrec.com\/?page_id=8549"},"modified":"2026-06-25T01:30:38","modified_gmt":"2026-06-25T01:30:38","slug":"session-f","status":"publish","type":"page","link":"https:\/\/www.nsrec.com\/session-f\/","title":{"rendered":"Technical Program 2026 – Session F"},"content":{"rendered":"[vc_row][vc_column][vc_column_text]\n

2026 IEEE NSREC TECHNICAL PROGRAM<\/strong><\/h2>\n

SESSION F SCHEDULE<\/strong><\/h2>\n

PUERTO RICO CONVENTION CENTER, SAN JUAN, PR<\/strong><\/h2>\n

THURSDAY, JULY 23, 2026<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]SESSION F<\/strong>
Ballroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]BASIC MECHANISMS OF RADIATION EFFECTS<\/strong>[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]8:45 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTION<\/strong>
Chair: Marta Bagatin (University of Padova)[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]F-1<\/strong>
8:50 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Investigation of Total Ionizing Dose-Induced Trap Density in 12-nm FinFET Technology Using 1\/f Noise<\/strong><\/p>\n

K. Sapkota1<\/sup>, B. Tierney1<\/sup>, A. Vidana1<\/sup>, B. Dodd1<\/sup>, J. Neuendank1,2<\/sup>, R. Ghimire3<\/sup>, M. Spear3<\/sup>, H. Barnaby2<\/sup>, N. Nowlin1<\/sup><\/p>\n

1. Sandia National Laboratories, USA   2. Arizona State University, USA   3. Air Force Research Laboratory, USA<\/p>\n

The 1\/f noise level measured in GlobalFoundries 12-nm FinFETs increases with ionizing dose. The TID-induced traps near the silicon-oxide interface are estimated, and their behaviors for different threshold voltages are discussed.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]F-2<\/strong>
9:05 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

TID Response Comparison of Two 28-nm CMOS Technology Flavors: HPL vs. HPC+<\/strong><\/p>\n

G. Andreetta1<\/sup>, L. Gelmi2<\/sup>, E. Vallicelli3<\/sup>, M. De Matteis3<\/sup>, A. Lai4<\/sup>, A. Paccagnella1<\/sup>, S. Mattiazzo1<\/sup>, S. Bonaldo1<\/sup><\/p>\n

1. University of Padova, Italy   2. University of Pavia, Italy   3. University of Milano Bicocca, Italy   4. INFN Cagliari, Italy<\/p>\n

Total ionizing dose (TID) is investigated by X-rays in two 28-nm CMOS technology flavors, HPL and HPC+. Differences in the TID sensitivity are found in short-channel devices.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]F-3<\/strong>
9:20 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Displacement Damage Mitigation in Fully Isolated N and P-Type Pixel Microvolumes<\/strong><\/p>\n

A. Salih Alj1<\/sup>, V. Goiffon1<\/sup>, M. Bolin1<\/sup>, J. Carrere2<\/sup>, V. Malherbe2<\/sup>, C. Virmontois3<\/sup><\/p>\n

1. ISAE-SUPAERO, France   2. STMicroelectronics, France   3. CNES, France<\/p>\n

We show that isolation trenches reduce displacement damage in silicon microvolumes by strongly reducing divacancy formation, based on dark current spectroscopy comparing gamma- and proton-irradiated trench photogates with trench-less vertical photodiodes.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]F-4<\/strong>
9:35 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

High-Field-Induced Recovery of TID-Induced Threshold Voltage Shifts in SiC MOSFETs<\/strong><\/p>\n

Z. Stone1<\/sup>, M. Hu1<\/sup>, D. Fleetwood1<\/sup>, J. Trippe1<\/sup>, S. Kosier1<\/sup>, R. Schrimpf1<\/sup>, D. Ball1<\/sup>, R. Cadena1<\/sup>, M. Alles1<\/sup>, L. Massengill1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

Threshold-voltage recovery in TID-irradiated SiC MOSFETs by high-field stress is highly repeatable to 1 Mrad(SiO2) cumulative dose. We find that Fowler\u2013Nordheim electron injection reversibly cycles oxide defects between charged and neutral states without progressive degradation.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]F-5<\/strong>
9:50 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Low-Frequency Noise and Heavy-ion Radiation Effects in Enhancement-Mode GaN Power HEMTs<\/strong><\/p>\n

S. Shorina1<\/sup>, E. Zhang1<\/sup>, H. Parra1<\/sup>, A. Billa1<\/sup>, P. Maloney1<\/sup>, B. Bolton1<\/sup>, S. Hankinson1<\/sup>, H. Gingold1<\/sup>, J. Debnath1<\/sup>, S. Islam2<\/sup>, T. Liu2<\/sup>, J. Gray2<\/sup>, D. Fleetwood2<\/sup>, L. Massengill2<\/sup><\/p>\n

1. University of Central Florida, USA   2. Vanderbilt University, USA<\/p>\n

Low-frequency noise in enhancement-mode power HEMTs increases after krypton irradiation, indicating radiation-activated trap generation near the channel and buffer layer. Nitrogen vacancy related defects are likely responsible for the increased noise.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

POSTER SESSION F<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Dose Enhancement Effects in Nanometer-Scale Technologies<\/strong><\/p>\n

E. Wong1<\/sup>, B. Dodd1<\/sup>, C. Champagne1<\/sup>, D. Ball1<\/sup>, S. Kosier1<\/sup>, M. Hu1<\/sup>, R. Reed1<\/sup>, B. Sierawski1<\/sup>, D. Fleetwood1<\/sup>, R. Schrimpf1<\/sup>, J. Trippe1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

Dose enhancement in nanometer-scale devices is quantified via Monte Carlo radiation- transport simulations of 22-nm FDSOI devices. Results are calibrated and compared via comparison with experimental data on structures having high-Z gate stacks.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Electric-Field-Dependence of X-Ray TID-Induced Instabilities in Enhancement-Mode GaN HEMTs<\/strong><\/p>\n

A. Billa1<\/sup>, S. Shorina1<\/sup>, P. Maloney1<\/sup>, J. Debnath1<\/sup>, H. Parra1<\/sup>, B. Bolton1<\/sup>, E. Zhang1<\/sup><\/p>\n

1. University of Central Florida, USA<\/p>\n

X-ray total ionizing dose effects in enhancement-mode GaN HEMTs are examined under different post-irradiation electric fields. Threshold-voltage shifts and recovery depend strongly on bias history, with TCAD simulations linking field distribution to charge trapping stability.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Electrically detected magnetic resonance and near zero field magnetoresistance study of heavy ion irradiation in GaN pn junction diodes<\/strong><\/p>\n

D. Hassenmayer1<\/sup>, M. Elko1<\/sup>, P. Lenahan1<\/sup><\/p>\n

1. Penn State University, USA<\/p>\n

Electrically detected magnetic resonance (EDMR) and near zero field magnetoresistance (NZFMR) measurements were utilized to detect atomic scale defects generated by heavy ion irradiation of GaN pn junction diodes at room temperature.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Degradation mechanisms and radiation-induced material modifications in SiC power diodes<\/strong><\/p>\n

H. Goncalves de Medeiros1<\/sup>, N. F\u00fcr1<\/sup>, A. Erlebach1<\/sup>, M. Belanche1<\/sup>, J. Reuteler1<\/sup>, K. Voss2<\/sup>, U. Grossner1<\/sup><\/p>\n

1. ETH Zurich, Switzerland   2. GSI, Switzerland<\/p>\n

SELC and SEB degradation and their mechanisms in SiC power diodes are investigated through post-irradiation characterization with EDX, Ultraviolet-Visible Photoluminescence (UVPL), and Raman Spectroscopy. 3D-TCAD is employed to put the findings into perspective.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Onset of Degradation in COTS SiC Power Diodes Exposed to High-Energy Proton Irradiation<\/strong><\/p>\n

N. F\u00fcr1<\/sup>, H. Goncalves de Medeiros1<\/sup>, M. Nagel1<\/sup>, M. Kirchbaumer1<\/sup>, M. Belanche Guadas1<\/sup>, R. Kupper1<\/sup>, U. Grossner1<\/sup><\/p>\n

1. ETH Z\u00fcrich, Switzerland<\/p>\n

Based on high-energy (200 MeV) proton irradiation on COTS SiC power diodes, the impact of displacement-induced defect activation in radiation-induced damage and, in consequence, the limitations of standard derating practices are discussed.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-6<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Investigation on Mechanism of Total Ionizing Dose Effects in Tin Oxide Field-Effect Transistors by Gamma-ray Irradiation<\/strong><\/p>\n

S. Kim1<\/sup>, H. Kim2<\/sup>, G. Jeon1<\/sup>, Y. Hwang1<\/sup>, R. Chung2<\/sup>, D. Kim1<\/sup><\/p>\n

1. Korea Atomic Energy Research Institute, Korea   2. Kyungpook National University, Korea<\/p>\n

Total ionizing dose effects in SnO2 FETs were investigated using Co-60 gamma irradiation. The results revealed the dose-dependent correlation between pre-existing oxygen vacancies and radiation-induced electron-hole pairs, relating to the degradation of device performance.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-7<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Field\u2011Assisted Charge Detrapping and Gain Recovering in a Standard NPN Bipolar Transistor<\/strong><\/p>\n

I. Lopez Calle1<\/sup><\/p>\n

1. European Space Agency (ESA), Netherlands<\/p>\n

An intense electric field applied between collector and emitter accelerates charge detrapping and enables instantaneous gain recovery in irradiated bipolar COTS transistors. This approach supports hardness\u2011assurance methodologies and rapid in\u2011situ mitigation of bipolar COTS components.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-8L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Multi-Physics Modeling of Extreme Single-Particle Damage Events in Silicon Pixel Microvolumes<\/strong><\/p>\n

J. Paciaroni1<\/sup>, G. Mayberry1<\/sup>, C. Champagne1<\/sup>, D. Ball1<\/sup>, M. Hu1<\/sup>, V. Goiffon2<\/sup>, B. Sierawski1<\/sup>, R. Reed1<\/sup>, D. Fleetwood1<\/sup>, R. Schrimpf1<\/sup>, S. Pantelides1<\/sup>, J. Trippe1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. ISAE-SUPAERO, France<\/p>\n

Single-event displacement damage is modeled in silicon pixel microvolumes with coupled binary collision Monte Carlo and molecular dynamics codes. This approach accounts for similar exponential tails in the pixel damage distributions, consistent with experiments.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-9L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Muon Susceptibility of a SQUID: From Simulations to Beam Experiments<\/strong><\/p>\n

G. Casagranda1<\/sup>, A. Hillier2<\/sup>, C. Cazzaniga2<\/sup>, M. Kastriotou2<\/sup>, M. Vallero1<\/sup>, C. Frost2<\/sup>, P. Rech1<\/sup><\/p>\n

1. University of Trento, Italy   2. STFC, United Kingdom<\/p>\n

About the effects of 70\u2013120MeV muons on a SQUID. Simulations and muon spectroscopy depict the permeability profile. Experimentally, we show that faults are induced (almost) exclusively by muons decaying in the SQUID\u2019s active layers.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-10L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

A Deep Level look Into the Impact of 14 MeV Neutrons Under Comparable Damage Conditions on Silicon PN Junction Diodes<\/strong><\/p>\n

D. Hodgson1<\/sup>, J. Cain1<\/sup>, B. Aguirre1<\/sup>, V. Doan1<\/sup><\/p>\n

1. Sandia National Laboratories, USA<\/p>\n

DLTS and modeling indicate different defect population for silicon photodiodes irradiated with 14 MeV neutrons in fast pulse vs steady state irradiations under controlled total displacement damage.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n","protected":false},"excerpt":{"rendered":"

[vc_row][vc_column][vc_column_text] 2026 IEEE NSREC TECHNICAL PROGRAM SESSION F SCHEDULE PUERTO RICO CONVENTION CENTER, SAN JUAN, PR THURSDAY, JULY 23, 2026 [\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]SESSION FBallroom A[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]BASIC MECHANISMS OF RADIATION EFFECTS[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]8:45 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTIONChair: Marta Bagatin (University of Padova)[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]F-18:50 AM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text] Investigation of Total Ionizing Dose-Induced Trap Density in 12-nm FinFET Technology… Continue reading Technical Program 2026 – Session F<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-8549","page","type-page","status-publish","hentry","entry"],"acf":{"page_header":[{"ID":8749,"post_author":"2","post_date":"2025-09-04 20:34:04","post_date_gmt":"2025-09-04 20:34:04","post_content":"[vc_row][vc_column][vc_empty_space height=\"125px\"][\/vc_column][\/vc_row][vc_row][vc_column width=\"1\/2\"][vc_column_text]\r\n

IEEE Nuclear & Space Radiation Effects Conference<\/h1>\r\n

JULY 20th-24th, 2026<\/h2>\r\n

San Juan, Puerto Rico, USA<\/h2>\r\n[\/vc_column_text][vc_column_text]\r\n
Follow NSREC [nsrec_social_icons]<\/div>\r\n[\/vc_column_text][vc_empty_space height=\"6px\"][vc_btn title=\"NSREC Brochure\" style=\"3d\" color=\"warning\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F07%2F2026_NSRECBrochure_Final_V2e.pdf|target:_blank\"][vc_empty_space height=\"6px\"][vc_btn title=\"Schedule at a Glance\" style=\"3d\" color=\"inverse\" size=\"sm\" i_icon_fontawesome=\"fas fa-external-link-alt\" css_animation=\"fadeIn\" add_icon=\"true\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fschedule-at-a-glance%2F|target:_blank\"][\/vc_column][vc_column width=\"1\/4\"][vc_single_image image=\"8767\" style=\"vc_box_rounded\"][vc_empty_space height=\"16px\"][vc_btn title=\"Chair's Invitation\" color=\"inverse\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2025%2F11%2FInvitation-Letter.pdf|title:Chair%E2%80%99s%20Invitation|target:_blank\"][vc_separator][\/vc_column][vc_column width=\"1\/4\"][vc_empty_space height=\"290px\"][vc_btn title=\"Short Course Description\" color=\"danger\" link=\"url:https%3A%2F%2Fwww.nsrec.com%2Fwp-content%2F%2Fuploads%2F2026%2F04%2FNSREC-2026ShortCourse-FLYER_v6-Final.pdf|title:Short%20Course%20Description|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Supporter and Exhibitor Registration\" color=\"danger\" link=\"url:https%3A%2F%2Fcvent.me%2FvlPo1L|title:Supporter%20Registration|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Hotel Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fbook.passkey.com%2Fevent%2F51004057%2Fowner%2F5772432%2Fhome%3Futm_campaign%3D299386963c%26mobile%3Dtrue%26dw%3D414|title:Hotel%20Registration%20|target:_blank\"][vc_empty_space height=\"16px\"][vc_btn title=\"Conference Registration\" color=\"warning\" css_animation=\"lightSpeedIn\" link=\"url:https%3A%2F%2Fcvent.me%2FaW0lgE|title:Conference%20Registration|target:_blank\"][\/vc_column][\/vc_row][vc_row][vc_column][vc_empty_space height=\"16px\"][\/vc_column][\/vc_row][vc_row][vc_column][\/vc_column][\/vc_row]","post_title":"Main Header 2026","post_excerpt":"","post_status":"publish","comment_status":"closed","ping_status":"closed","post_password":"","post_name":"main-header-2026","to_ping":"","pinged":"","post_modified":"2026-07-19 12:34:21","post_modified_gmt":"2026-07-19 12:34:21","post_content_filtered":"","post_parent":0,"guid":"https:\/\/www.nsrec.com\/?post_type=headers&p=8749","menu_order":0,"post_type":"headers","post_mime_type":"","comment_count":"0","filter":"raw"}]},"_links":{"self":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8549","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/comments?post=8549"}],"version-history":[{"count":5,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8549\/revisions"}],"predecessor-version":[{"id":9321,"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/pages\/8549\/revisions\/9321"}],"wp:attachment":[{"href":"https:\/\/www.nsrec.com\/wp-json\/wp\/v2\/media?parent=8549"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}