{"id":9210,"date":"2026-06-16T21:24:55","date_gmt":"2026-06-16T21:24:55","guid":{"rendered":"https:\/\/www.nsrec.com\/poster-session\/"},"modified":"2026-06-25T01:30:39","modified_gmt":"2026-06-25T01:30:39","slug":"poster-session","status":"publish","type":"page","link":"https:\/\/www.nsrec.com\/poster-session\/","title":{"rendered":"Technical Program 2026 – Poster Session"},"content":{"rendered":"[vc_row][vc_column][vc_column_text]\n

2026 IEEE NSREC TECHNICAL PROGRAM<\/strong><\/h2>\n

POSTER SESSION SCHEDULE<\/strong><\/h2>\n

PUERTO RICO CONVENTION CENTER, SAN JUAN, PR<\/strong><\/h2>\n

WEDNESDAY, JULY 22, 2026<\/strong><\/h2>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]POSTER SESSION<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]POSTER SESSION<\/strong>[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]2:45 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTION<\/strong>
Chair: Vincent Goiffon (ISAE-SUPAERO)[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]2:50 – 4:50 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]Poster Session<\/strong>[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session A<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

SoC Processor and Memory Proton Testing Methodology and Results for the AMD Versal ACAP<\/strong><\/p>\n

G. Smith1<\/sup>, M. Wirthlin1<\/sup>, M. Brigham1<\/sup><\/p>\n

1. Brigham Young University, USA<\/p>\n

A methodology is presented for testing multiple processors and 18 memories simultaneously on the Versal ACAP during a proton irradiation test. Post-run fault analysis is performed to identify the root cause of all processor failures.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Impact of Structural and Numerical Constraints on Single-Event Upsets in ResNet50 Neural Networks<\/strong><\/p>\n

G. Qiao1<\/sup>, S. Feng1<\/sup>, G. Yu1<\/sup>, M. Tao2<\/sup>, Y. Chi1<\/sup>, J. Chen1<\/sup>, D. Luo1<\/sup>, J. Yang2<\/sup>, B. Liang1<\/sup><\/p>\n

1. National University of Defense Technology, China   2. Hunan University, China<\/p>\n

Using software fault injection and pulsed laser experiments, this work analyzes ResNet50 failure behaviors under radiation, showing that combined structural and numerical constraints significantly enhance model robustness on AI chip.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Heavy-Ion Testing of the AMD Versal Network-on-Chip<\/strong><\/p>\n

P. Drum1<\/sup>, A. George1<\/sup>, M. Cannon2<\/sup>, A. Kumar2<\/sup>, N. Myers2<\/sup>, A. Tabaczynski2<\/sup>, D. Lee2<\/sup>, N. Matter2<\/sup>, P. Thelen2<\/sup><\/p>\n

1. University of Pittsburgh, USA   2. Sandia National Laboratories, USA<\/p>\n

Heavy-ion tests were performed on the Versal Network-on-Chip to determine cross sections and common errors for two general-use designs. Common errors included correctable parity errors and packet misrouting errors.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Proton Radiation Testing of AI Models on the AMD Versal Deep Learning Processing Unit (DPU)<\/strong><\/p>\n

J. Brown1<\/sup>, H. Allan1<\/sup>, J. Goeders1<\/sup>, M. Wirthlin1<\/sup><\/p>\n

1. Brigham Young University, USA<\/p>\n

Fault injection and proton radiation testing of YOLO and ResNet models on the AMD Versal DPU reveal six failure modes, model-dependent error rates, and the predictive capability of fault injection<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Evaluation of Single-Event Effects on Swin Transformer Tracking Model for Sub-20nm FinFET-based AI Chips<\/strong><\/p>\n

Z. Li1<\/sup>, S. Feng1<\/sup>, G. Yu1<\/sup>, M. Tao2<\/sup>, Y. Chi1<\/sup>, J. Chen1<\/sup>, D. Luo1<\/sup>, J. Yang2<\/sup>, Y. Liu1<\/sup>, F. Luo1<\/sup>, J. Mo1<\/sup>, B. Liang1<\/sup><\/p>\n

1. National University of Defense Technology, China   2. Hunan University, China<\/p>\n

Pulsed laser and heavy-ion experiments are conducted on a Swin-Transformer-based edge tracking system. Different structural variants exhibit distinct SEFI\/SEU occurrence characteristics, revealing structure-dependent reliability behaviors under radiation- induced single-event effects. \u2013<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PA-6L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Assessment of RISC-V Microprocessors in SRAM-Based FPGA Under Heavy-Ion-Induced Faults<\/strong><\/p>\n

F. Lima Kastensmidt1<\/sup>, F. Benevenuti1<\/sup>, N. H. Medina2<\/sup>, V. P. Aguiar2<\/sup>, S. Alberton2<\/sup><\/p>\n

1. Federal University of Rio Grande do Sul, Brazil   2. University of Sao Paulo, Brazil<\/p>\n

This work evaluates three different RISC-V soft-core microprocessors implemented in SRAM-based Field-Programmable Gate Array (FPGA) under heavy ions irradiation. We investigate trade-offs between computing performance and reliability using modular redundancy and configuration memory scrubbing.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session B<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Microdose-Induced Stuck Bits in 7-nm FinFET SRAMs<\/strong><\/p>\n

M. Gorbunov1<\/sup>, E. Timokhin1<\/sup>, J. Weijers1<\/sup>, M. Van de Burgwal1<\/sup>, L. Berti1<\/sup>, G. Thys1<\/sup>, T. Vervecken2<\/sup>, D. Van Nuffel2<\/sup>, T. Schulte2<\/sup>, J. Vanden Berk2<\/sup>, D. Geys2<\/sup>, S. Bounasser3<\/sup>, B. Glass3<\/sup><\/p>\n

1. IMEC, Belgium   2. Magics Technologies NV, Belgium   3. ESA, Netherlands<\/p>\n

During the heavy-ion test campaign, we observed stuck bits in 7-nm FinFET SRAM blocks with certain bitcell types. The analysis and simulation results indicated that the microdose is the primary mechanism at typical fluence levels.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Characterization of Spatial Variability of Single-Event Latch-up in a 14-nm FinFET Technology<\/strong><\/p>\n

S. Zhao1<\/sup>, X. Li1<\/sup>, D. Zhang1<\/sup>, B. Li1<\/sup>, R. Tang1<\/sup>, Y. Gao1<\/sup>, C. Yang1<\/sup>, P. Lu2<\/sup>, L. Shu1<\/sup>, J. Bu1<\/sup>, J. Gao1<\/sup><\/p>\n

1. Institute of Microelectronics of the Chinese Academy of Sciences, China   2. Ocean University of China, China<\/p>\n

The significant spatial heterogeneity of SEL characteristics is revealed in a 14-nm FinFET multi-core SoC through heavy-ion and pulsed-laser experiments. A differentiated hardening strategy linking sensitivity to body-tie distance is proposed to provide design guidance.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Effects of Electrical Program\/Erase Cycling on the Single-Event Response of 65-nm SONOS Charge-Trap NOR Flash Memory<\/strong><\/p>\n

A. Hubbard1<\/sup>, A. Murali2<\/sup>, H. Hunnicutt1<\/sup>, T. Peyton1<\/sup>, B. Ray2<\/sup>, A. Ildefonso1<\/sup>, D. Loveless1<\/sup><\/p>\n

1. Indiana University Bloomington, USA   2. Colorado State University, USA<\/p>\n

Heavy\u2011ion testing on 65\u2011nm MirrorBit SONOS Charge-Trap NOR flash memory showed that program\/erase\u2011cycled sectors exhibit significantly lower bit\u2011normalized SEU cross- sections compared to single\u2011programmed sectors.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Mechanism Study of Heavy-Ion SEEs in a 12-bit SAR ADC in 22-nm FD-SOI<\/strong><\/p>\n

J. Zhao1<\/sup>, Z. Li1,2<\/sup>, Q. Ma1<\/sup>, Y. Qing1<\/sup>, M. Gorbunov2<\/sup>, M. Zhang1<\/sup>, E. Tackx1<\/sup>, J. Prinzie1<\/sup>, P. Leroux1<\/sup><\/p>\n

1. KU Leuven, Belgium   2. IMEC, Belgium<\/p>\n

22-nm FD-SOI SAR ADC heavy-ion tests reveal outliers at LET 27.5\u201360.2. Errors map to sampling, control, comparator, and flip-flop SEEs. As cross-section rises, signatures migrate from single-mechanism to arbitrary multi-bit and mixed-mechanism errors<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Reliability of Image Classification and Object Detection on Embedded Systolic Arrays<\/strong><\/p>\n

P. Foletto Pimenta1<\/sup>, S. Savazzi2<\/sup>, E. Verroi3<\/sup>, M. Pullia2<\/sup>, F. Santos4<\/sup>, P. Rech1<\/sup><\/p>\n

1. University of Trento, Italy   2. Centro Nazionale di Adroterapia Oncologica, Italy   3. Trento Institute for Fundamental Physics and Applications, Italy   4. INRIA, France<\/p>\n

We investigate the impact of 200 MeV protons on convolutions and prediction tasks executed on Tensor Processing Units. Kernel size does not impact output correctness while detection shows significantly more critical errors than classification.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PB-6<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Characterization of Latent Gate Damage and Single-Event Leakage Current by Gate Charge Measurements of Irradiated Silicon Carbide Power MOSFETs<\/strong><\/p>\n

A. Sengupta1,2<\/sup>, R. Cadena2<\/sup>, J. Vielmette2<\/sup>, S. Islam2<\/sup>, X. Zhao3<\/sup>, D. Bal2<\/sup>, A. Sternberg2<\/sup>, J. Osheroff4<\/sup>, J. Hutson5<\/sup>, M. Alles2<\/sup>, K. Galloway2<\/sup>, A. Witulski2<\/sup>, R. Schrimpf2<\/sup>, S. Kosier2<\/sup><\/p>\n

1. DLR, Germany   2. Vanderbilt University, USA   3. Duke University, USA   4. NASA Goddard Space Flight Center, USA   5. Lipscomb University, USA<\/p>\n

Gate charge measurements reveal that latent gate damage and drain-gate single-event leakage current in SiC MOSFETs are strongly dependent on the particle energy and drain bias during irradiation and are precursors to single-event gate rupture.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session C<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Total Ionizing Dose Effects on the Dark Count Rate in 110 nm CMOS SPADs<\/strong><\/p>\n

L. Ratti1<\/sup>, A. Burdyko2<\/sup>, M. Campajola3<\/sup>, G. Collazuol4<\/sup>, M. Da rocha rolo5<\/sup>, D. Falchieri6<\/sup>, G. Fiorillo3<\/sup>, T. Floris1<\/sup>, F. Licciulli7<\/sup>, M. Mazziotta7<\/sup>, L. Pancheri8<\/sup>, L. Rignanese6<\/sup>, R. Santoro2<\/sup>, F. Shojaei1<\/sup>, C. Vacchi1<\/sup><\/p>\n

1. Universit\u00e0 degli Studi di Pavia and INFN Pavia, Italy   2. Universit\u00e0 degli Studi dell\u2019Insubria and INFN Milano, Italy   3. Universit\u00e0 degli Studi di Napoli Federico II and INFN Napoli, Italy   4. Universit\u00e0 degli Studi di Padova and INFN Padova, Italy   5. INFN Torino, Italy   6. INFN Bologna, Italy   7. INFN Bari, Italy   8. Universit\u00e0 degli Studi di Trento and INFN TIFPA, Italy<\/p>\n

SPADs fabricated in a 110 nm CMOS technology, with different active areas and quenching features, are irradiated with 10 keV X-rays up to a total ionizing dose of 10 Mrad(SiO2). Effects on DCR are investigated.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Effects of annealing on Ga-Free T2SL Infrared Detector<\/strong><\/p>\n

H. Mezouar1<\/sup>, A. Michez2<\/sup>, M. Tornay3<\/sup>, C. Cervera4<\/sup>, P. Christol3<\/sup><\/p>\n

1. University of Montpellier, France   2. DELPHEA, France   3. University Of Montpellier, France   4. University of Grenobles-Alpes and CEA-LETI, France<\/p>\n

In this paper, we investigate the effect of thermal annealing on Ga-free InAs\/InAsSb type- II superlattice (T2SL) midwave infrared barrier photodetectors irradiated with 60 MeV protons at fluences up to 8×1011 H+\/cm\u00b2.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation-Induced Charge Collection Dynamics in Short-Wavelength P+-N Silicon Avalanche Photodiodes<\/strong><\/p>\n

N. Karom1<\/sup>, S. Ball1<\/sup>, E. Teo1<\/sup>, A. Veluri1<\/sup>, P. Harris1<\/sup>, M. Mccurdy1<\/sup>, R. Schrimpf1<\/sup>, D. Fleetwood1<\/sup>, J. Trippe1<\/sup>, R. Nederlander2<\/sup>, R. Reed1<\/sup>, S. Weiss1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. Aegis Aerospace, USA<\/p>\n

P+-N Si-APDs show significant gain decrease under alpha irradiation compared to optical excitation. Data analysis and TCAD simulations show this results from significant increases in carrier recombination relative to avalanche generation with increasing EHP density.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Total Ionizing Dose Effects on High-Speed Silicon Integrated Photonic Mach-Zehnder Modulators<\/strong><\/p>\n

K. Arnold1<\/sup>, N. Karom1<\/sup>, J. Slaby2<\/sup>, A. Veluri1<\/sup>, A. Kaylor2<\/sup>, A. Sternberg1<\/sup>, D. Ball1<\/sup>, R. Schrimpf1<\/sup>, D. Fleetwood1<\/sup>, S. Ralph2<\/sup>, R. Reed1<\/sup>, S. Weiss1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. Georgia Institute of Technology, USA<\/p>\n

Impacts of 10-keV X-ray irradiation on high-speed electro-optic response are observed in silicon Mach-Zehnder modulators. More than 50% electro-optic performance degradation is observed when devices are irradiated under active bias. Underlying ionization mechanisms are examined.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PC-5L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation-Induced Effects on Silicon Photonic Micro-Ring Modulators for Space Applications<\/strong><\/p>\n

A. Veluri1<\/sup>, N. Karom1<\/sup>, R. Schrimpf1<\/sup>, D. Fleetwood1<\/sup>, R. Reed1<\/sup>, S. Weiss1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

Silicon photonic micro-ring modulators maintain robust performance under 10-keV X-ray irradiation at space-relevant doses. Static modulation efficiency and high-speed electro-optic performance do not degrade, despite radiation-induced resonance wavelength shifts, confirming viability for space applications.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session D<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PD-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Understanding Radiation-Induced Accuracy Loss in Floating-Gate Based Analog Artificial Neural Networks<\/strong><\/p>\n

N. Afroz1<\/sup>, A. Sayem1<\/sup>, A. Dwadasi1<\/sup>, R. Baumann1<\/sup>, Y. Makris2<\/sup><\/p>\n

1. University of Texas at Dallas, USA   2. University of California, USA<\/p>\n

We investigate how total ionizing dose-induced charge loss in analog floating-gates affects the inference accuracy of Analog Artificial Neural Networks (AANNs) and demonstrate how periodic hot-electron reprogramming can restore performance, effectively mitigating radiation-induced degradation.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PD-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation Threshold of Scaled Isotopically Pure MoS2 Nanoribbon Field-Effect Transistors<\/strong><\/p>\n

J. Yang1<\/sup>, T. Pena2<\/sup>, A. Wright1<\/sup>, J. Chaney1<\/sup>, A. Hoang2<\/sup>, A. Mannix2<\/sup>, E. Pop2<\/sup>, D. Daniel1<\/sup>, J. Taggart1<\/sup>, S. Stuart1<\/sup>, A. Bushmaker1<\/sup><\/p>\n

1. The Aerospace Corporation, USA   2. Stanford University, USA<\/p>\n

We investigate the effects of gamma radiation on scaled monolayer molybdenum disulfide (MoS2) nanoribbon field-effect transistors. At 1 Mrad TID, threshold voltage degradation occurred while field-effect mobility remained constant, indicating gate dielectric limits radiation hardness.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PD-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Capacitance Shifts in Multilayer Ceramic Capacitors Induced by Gamma Irradiation<\/strong><\/p>\n

P. Muscat1<\/sup>, H. Barnaby1<\/sup>, G. Rodarte1<\/sup>, C. Nies2<\/sup>, M. Conway3<\/sup>, D. West2<\/sup>, H. Hairston2<\/sup>, J. Neuendank1<\/sup>, Z. Adamany1<\/sup><\/p>\n

1. Arizona State University, USA   2. KYOCERA AVX, USA   3. KYOCERA AVX, United Kingdom<\/p>\n

Total ionizing dose effects on capacitance were evaluated for X7R and C0G\/NP0 multilayer ceramic capacitors using Co-60 gamma irradiation. X7R devices showed monotonic dose-dependent capacitance reduction, while C0G\/NP0 capacitors remained stable.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PD-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Effects of X-Ray Radiation on the Performance of Lithium Niobate MEMS Resonators<\/strong><\/p>\n

J. Vivas Gomez1<\/sup>, H. Parra1<\/sup>, E. Zhang1<\/sup>, J. Lee1<\/sup>, R. Abdolvand1<\/sup><\/p>\n

1. University of Central Florida, USA<\/p>\n

X-ray total ionizing dose effects were investigated in resonant LiNbO3 TPoS MEMS. After radiation, resonant frequency shifts remained below 0.06%, while bounded, partially recoverable degradation in Q, keff\u00b2, motional resistance, and insertion loss are observed.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PD-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radio Frequency Injection Effects on Electronic Devices Subject to Neutron Displacement Damage<\/strong><\/p>\n

N. Crenshaw1,2<\/sup>, J. Young1<\/sup>, J. Wallace1<\/sup>, I. Timmins1<\/sup>, L. Musson1<\/sup>, W. Charlton2<\/sup><\/p>\n

1. Sandia National Laboratories, USA   2. University of Texas at Austin, USA<\/p>\n

Linear bipolar transistors, differential amplifiers, and operational amplifiers were exposed to individual and combined neutron and electromagnetic environments. Neutron displacement damage was observed to modify device and circuit response to injected RF noise.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PD-6<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Ring-Oscillator-Based Methodology for Degradation Parameter Extraction After TID Irradiations<\/strong><\/p>\n

X. Zhao1<\/sup>, J. Kronenberg1<\/sup>, S. Tolson1<\/sup>, N. Pieper1<\/sup>, Y. Xiong1<\/sup>, B. Bhuva1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

Different RO designs are used to determine effective degradations in NMOS and PMOS currents after TID exposures in a 3-nm bulk FinFET technology, revealing effects of irradiation bias and circuit activity that influence degradation levels.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PD-7L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Impact of Substrate Engineering on Total-Ionizing-Dose Response of GaN-Based High-Electron-Mobility Transistors<\/strong><\/p>\n

O. Meilander1<\/sup>, J. Kronenberg1<\/sup>, X. Zhao1<\/sup>, B. Bhuva1<\/sup>, M. Ebrish1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

TID effects are evaluated for GaN HEMTs fabricated on sapphire, SiC, and engineered substrates. After 1Mrad(SiO\u2082) X-ray irradiation, SiC-based devices exhibit the least parameter shifts, suggesting that substrate-induced defects govern TID sensitivity in GaN HEMTs.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session E<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PE-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Real-time Monitoring of the CHARM Mixed Field Irradiation with Optical Fiber Dosimeters<\/strong><\/p>\n

L. Weninger1<\/sup>, S. Acid1,2<\/sup>, Y. Aguiar3<\/sup>, R. Garcia3<\/sup>, N. Kerboub2<\/sup>, S. Fiore3<\/sup>, D. Prelipcean3<\/sup>, A. Morana1<\/sup>, S. Girard1<\/sup><\/p>\n

1. Universit\u00e9 de Saint Etienne, France   2. CNES, France   3. CERN, Switzerland<\/p>\n

We propose a novel approach to adapt optical-fiber based dosimeters based on the radiation-induced luminescence (RIL) phenomenon to the pulsed (spill-based time structure) mixed-field environment of the CHARM facility at CERN.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PE-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Very High-Energy Heavy-Ion SEE Testing Results at the HEARTS@CERN Facility During the 2025 Run<\/strong><\/p>\n

B. Tissot Ferraz1<\/sup>, T. Beene1<\/sup>, D. S\u00f6derstr\u00f6m1<\/sup>, I. Slipukhin1<\/sup>, R. Garcia1<\/sup>, N. Emriskova1<\/sup>, A. Waets1<\/sup>, Y. Aguiar1<\/sup>, D. Prelipcean1<\/sup>, C. Matteo1<\/sup>, M. Garcia1<\/sup>, D. Lucsanyi1<\/sup>, R. Federico1<\/sup>, G. Pezzullo1<\/sup>, G. Kucharska1<\/sup>, E. Garcia1<\/sup>, J. McCarthy1<\/sup>, M. Delrieux1<\/sup><\/p>\n

1. CERN, Switzerland<\/p>\n

The paper presents the results of Single-Event-Effect testing of commercial electronic devices with very high-energy heavy ions at the HEARTS@CERN facility during the 2025 run, along with the beam characterization and the adopted dosimetry practices.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PE-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Evaluating 3-D NAND as a Passive Radiation Dosimeter: A Comparison of FG and CT Technology<\/strong><\/p>\n

M. Kumar1<\/sup>, J. Bell1<\/sup>, A. Brandl1<\/sup>, B. Ray1<\/sup><\/p>\n

1. Colorado State University, USA<\/p>\n

This work experimentally investigates 3-D floating-gate and charge-trap NAND flash as passive radiation dosimeters, showing linear FG sensitivity of ~12.5 mV\/krad(Si), while CT exhibits multi-mechanism, non-linear response with ~35 mV\/krad(Si) initially, reducing to ~18 mV\/krad(Si).<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PE-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Operational Time-Resolved Single-Event Upset Rate Estimation from On-Board Particle Flux Measurements<\/strong><\/p>\n

A. Koziukov1<\/sup>, G. Protopopov1<\/sup>, M. Kozhukhov1<\/sup>, I. Gvozdev1<\/sup><\/p>\n

1. RH-Forecast LLC, Russian Federation<\/p>\n

This paper presents a time-resolved, measurement-driven approach to estimate SEU rates in spacecraft memories during SPEs by reconstructing particle spectra from GOES-16 and ACE flux measurements. The method is validated against in-flight upset-count data from RHEME-3.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PE-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Investigation of the Energy-Dependent Response of Si IGBT and SiC Power MOSFETs to Fast Neutrons<\/strong><\/p>\n

C. Cazzaniga1<\/sup>, F. Principato2<\/sup>, F. Pintacuda3<\/sup>, X. Ledoux4<\/sup>, M. Kastriotou1<\/sup>, C. Frost1<\/sup><\/p>\n

1. STFC, United Kingdom   2. Palermo University, Italy   3. STMicroelectronics, Italy   4. GANIL, France<\/p>\n

Silicon IGBT and silicon carbide power MOSFETs have been studied with fast neutrons in the 2-40 MeV range at GANIL SPIRAL-2 where energy selection is possible. The results can be compared with atmospheric neutron tests.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PE-6L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Demonstration of High-Energy Laser Accelerated Electron Beam Focusing for Radiation Testing of Electronics<\/strong><\/p>\n

E. McCary1<\/sup>, T. Ha1<\/sup>, P. Franke1<\/sup>, D. Phan1<\/sup>, M. Gracia-Linares1<\/sup>, G. Tiwari1<\/sup>, H. Smith1<\/sup>, L. Labun1<\/sup>, S. Milton1<\/sup>, K. Riordan2<\/sup>, C. Hojbota2<\/sup>, B. Hegelich2<\/sup><\/p>\n

1. Tau Systems Inc, USA   2. Univ. Texas at Austin, USA<\/p>\n

A prototype focusing beamline was built and initial tests demonstrate ~100\u00b5m focused laser-accelerated electron beam diameters with LETs >10 MeV-cm2\/mg at 90 MeV beam energy, corresponding to effective ranges in silicon of ~100\u00b5m.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session F<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Dose Enhancement Effects in Nanometer-Scale Technologies<\/strong><\/p>\n

E. Wong1<\/sup>, B. Dodd1<\/sup>, C. Champagne1<\/sup>, D. Ball1<\/sup>, S. Kosier1<\/sup>, M. Hu1<\/sup>, R. Reed1<\/sup>, B. Sierawski1<\/sup>, D. Fleetwood1<\/sup>, R. Schrimpf1<\/sup>, J. Trippe1<\/sup><\/p>\n

1. Vanderbilt University, USA<\/p>\n

Dose enhancement in nanometer-scale devices is quantified via Monte Carlo radiation- transport simulations of 22-nm FDSOI devices. Results are calibrated and compared via comparison with experimental data on structures having high-Z gate stacks.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Electric-Field-Dependence of X-Ray TID-Induced Instabilities in Enhancement-Mode GaN HEMTs<\/strong><\/p>\n

A. Billa1<\/sup>, S. Shorina1<\/sup>, P. Maloney1<\/sup>, J. Debnath1<\/sup>, H. Parra1<\/sup>, B. Bolton1<\/sup>, E. Zhang1<\/sup><\/p>\n

1. University of Central Florida, USA<\/p>\n

X-ray total ionizing dose effects in enhancement-mode GaN HEMTs are examined under different post-irradiation electric fields. Threshold-voltage shifts and recovery depend strongly on bias history, with TCAD simulations linking field distribution to charge trapping stability.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Electrically detected magnetic resonance and near zero field magnetoresistance study of heavy ion irradiation in GaN pn junction diodes<\/strong><\/p>\n

D. Hassenmayer1<\/sup>, M. Elko1<\/sup>, P. Lenahan1<\/sup><\/p>\n

1. Penn State University, USA<\/p>\n

Electrically detected magnetic resonance (EDMR) and near zero field magnetoresistance (NZFMR) measurements were utilized to detect atomic scale defects generated by heavy ion irradiation of GaN pn junction diodes at room temperature.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Degradation mechanisms and radiation-induced material modifications in SiC power diodes<\/strong><\/p>\n

H. Goncalves de Medeiros1<\/sup>, N. F\u00fcr1<\/sup>, A. Erlebach1<\/sup>, M. Belanche1<\/sup>, J. Reuteler1<\/sup>, K. Voss2<\/sup>, U. Grossner1<\/sup><\/p>\n

1. ETH Zurich, Switzerland   2. GSI, Switzerland<\/p>\n

SELC and SEB degradation and their mechanisms in SiC power diodes are investigated through post-irradiation characterization with EDX, Ultraviolet-Visible Photoluminescence (UVPL), and Raman Spectroscopy. 3D-TCAD is employed to put the findings into perspective.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-5<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Onset of Degradation in COTS SiC Power Diodes Exposed to High-Energy Proton Irradiation<\/strong><\/p>\n

N. F\u00fcr1<\/sup>, H. Goncalves de Medeiros1<\/sup>, M. Nagel1<\/sup>, M. Kirchbaumer1<\/sup>, M. Belanche Guadas1<\/sup>, R. Kupper1<\/sup>, U. Grossner1<\/sup><\/p>\n

1. ETH Z\u00fcrich, Switzerland<\/p>\n

Based on high-energy (200 MeV) proton irradiation on COTS SiC power diodes, the impact of displacement-induced defect activation in radiation-induced damage and, in consequence, the limitations of standard derating practices are discussed.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-6<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Investigation on Mechanism of Total Ionizing Dose Effects in Tin Oxide Field-Effect Transistors by Gamma-ray Irradiation<\/strong><\/p>\n

S. Kim1<\/sup>, H. Kim2<\/sup>, G. Jeon1<\/sup>, Y. Hwang1<\/sup>, R. Chung2<\/sup>, D. Kim1<\/sup><\/p>\n

1. Korea Atomic Energy Research Institute, Korea   2. Kyungpook National University, Korea<\/p>\n

Total ionizing dose effects in SnO2 FETs were investigated using Co-60 gamma irradiation. The results revealed the dose-dependent correlation between pre-existing oxygen vacancies and radiation-induced electron-hole pairs, relating to the degradation of device performance.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-7<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Field\u2011Assisted Charge Detrapping and Gain Recovering in a Standard NPN Bipolar Transistor<\/strong><\/p>\n

I. Lopez Calle1<\/sup><\/p>\n

1. European Space Agency (ESA), Netherlands<\/p>\n

An intense electric field applied between collector and emitter accelerates charge detrapping and enables instantaneous gain recovery in irradiated bipolar COTS transistors. This approach supports hardness\u2011assurance methodologies and rapid in\u2011situ mitigation of bipolar COTS components.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-8L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Multi-Physics Modeling of Extreme Single-Particle Damage Events in Silicon Pixel Microvolumes<\/strong><\/p>\n

J. Paciaroni1<\/sup>, G. Mayberry1<\/sup>, C. Champagne1<\/sup>, D. Ball1<\/sup>, M. Hu1<\/sup>, V. Goiffon2<\/sup>, B. Sierawski1<\/sup>, R. Reed1<\/sup>, D. Fleetwood1<\/sup>, R. Schrimpf1<\/sup>, S. Pantelides1<\/sup>, J. Trippe1<\/sup><\/p>\n

1. Vanderbilt University, USA   2. ISAE-SUPAERO, France<\/p>\n

Single-event displacement damage is modeled in silicon pixel microvolumes with coupled binary collision Monte Carlo and molecular dynamics codes. This approach accounts for similar exponential tails in the pixel damage distributions, consistent with experiments.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-9L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Muon Susceptibility of a SQUID: From Simulations to Beam Experiments<\/strong><\/p>\n

G. Casagranda1<\/sup>, A. Hillier2<\/sup>, C. Cazzaniga2<\/sup>, M. Kastriotou2<\/sup>, M. Vallero1<\/sup>, C. Frost2<\/sup>, P. Rech1<\/sup><\/p>\n

1. University of Trento, Italy   2. STFC, United Kingdom<\/p>\n

About the effects of 70\u2013120MeV muons on a SQUID. Simulations and muon spectroscopy depict the permeability profile. Experimentally, we show that faults are induced (almost) exclusively by muons decaying in the SQUID\u2019s active layers.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PF-10L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

A Deep Level look Into the Impact of 14 MeV Neutrons Under Comparable Damage Conditions on Silicon PN Junction Diodes<\/strong><\/p>\n

D. Hodgson1<\/sup>, J. Cain1<\/sup>, B. Aguirre1<\/sup>, V. Doan1<\/sup><\/p>\n

1. Sandia National Laboratories, USA<\/p>\n

DLTS and modeling indicate different defect population for silicon photodiodes irradiated with 14 MeV neutrons in fast pulse vs steady state irradiations under controlled total displacement damage.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session G<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PG-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Variability Analysis of TID-Induced Failure in a Complex Microcontroller<\/strong><\/p>\n

I. Hudson1<\/sup>, H. Hunnicutt1<\/sup>, D. Loveless1<\/sup><\/p>\n

1. Indiana University, USA<\/p>\n

Inter-device variability in TID-induced functional failure was observed across forty-six MSP430FR6989 microcontroller units. A combination of programmable bias and the internal VLO oscillator\u2019s baseline behavior is shown to be predictive of the failure dose.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PG-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Benchtop Emulation of System-Level Analog Single-Event Transients from Piece-Part Data<\/strong><\/p>\n

M. McKinney1<\/sup>, C. James1<\/sup>, T. Peyton1<\/sup>, H. Hunnicutt1<\/sup>, D. Loveless1<\/sup><\/p>\n

1. Indiana University, USA<\/p>\n

A board-level ASET emulation methodology is demonstrated by comparing heavy-ion\u2013 induced transients in a linear voltage regulator with emulated responses derived from measured piece-part SETs, enabling system verification with reduced radiation testing.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PG-3<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Electron Pulses Generated by Compact Laser-Plasma Accelerators as Surrogates for Heavy Ions in Single Event Effect Testing<\/strong><\/p>\n

M. Hu1<\/sup>, J. Trippe1<\/sup>, D. Ball1<\/sup>, A. Sternberg1<\/sup>, B. Sierawski1<\/sup>, M. Solt2<\/sup>, J. Thieman2<\/sup>, S. Schroeder3<\/sup>, J. Van Tilborg3<\/sup>, J. Matson2<\/sup>, J. Warner2<\/sup>, B. Dorney2<\/sup>, R. Jacob3<\/sup>, C. Berger3<\/sup>, B. Greenwood3<\/sup>, S. Barber3<\/sup>, R. Reed1<\/sup>, D. Fleetwood1<\/sup>, S. Wolin2<\/sup>, K. Nagamatsu2<\/sup>, M. McLain2<\/sup><\/p>\n

1. Vanderbilt University, USA   2. Northrop Grumman, USA   3. Lawrence Berkeley National Laboratory, USA<\/p>\n

Laser-plasma accelerated electron bunches are investigated as surrogates for heavy ion testing of single event effects in microelectronics. Experimental data and high-fidelity simulations show that microelectronic responses to electron bunches can mimic heavy ions.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PG-4<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Augmenting Pulsed-Laser Latchup Screening Process with SEL Historical Data Model<\/strong><\/p>\n

J. Warner1<\/sup>, S. Messenger1<\/sup>, B. Song1<\/sup>, J. Rodriguez1<\/sup><\/p>\n

1. Northrop Grumman, USA<\/p>\n

Pulsed-laser screening was performed on commercial CMOS devices to estimate the latchup cross-section vs LET curve and historical heavy ion data is used to bound SEL risk.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PG-5L<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Radiation-Resilient In-Memory FFT Computing with Commercial 3D NAND Memories<\/strong><\/p>\n

S. Seo1<\/sup>, S. Kim1<\/sup>, S. Yi2<\/sup>, V. Shastry2<\/sup><\/p>\n

1. University of Rhode Island, USA   2. Texas A&M University, USA<\/p>\n

This work investigates a cross-layer technique to improve the robustness of in-memory computing FFT acceleration under radiation using radiation-soft commercial 3D NAND flash memories for energy-efficient space and edge applications.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column][vc_column_text]\n

Posters \u2014 Session H<\/strong><\/h3>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PH-1<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Investigating Flux Dependent Fault Masking and Recoverability in a Mixed-Signal SoC via Spatial and Temporal Gating<\/strong><\/p>\n

A. Dwadasi1<\/sup>, R. Rodriguez-Davila1<\/sup>, M. Pate2<\/sup>, T. Nikoubin1<\/sup>, R. Baumann1<\/sup><\/p>\n

1. University of Texas at Dallas, USA   2. Texas Instruments, USA<\/p>\n

Flux dependent fault masking in a TI F28377D-SEP microcontroller is investigated using a high-speed shutter and 3-D printed physical masks, showing how temporal and spatial gating can expose hidden unrecoverable faults during accelerated SEE testing.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n[vc_row][vc_column width=”1\/4″][vc_column_text]PH-2<\/strong>[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]\n

Evaluation of single-event upset effects on VGG neural networks under model lightweighting and algorithm-level hardening<\/strong><\/p>\n

N. Yingqiang1<\/sup>, T. Ming2<\/sup>, Y. Guofang1<\/sup>, C. Yaqing1<\/sup>, C. Jianjun1<\/sup>, L. Deng1<\/sup>, Y. Jiaofen2<\/sup>, L. Bin1<\/sup><\/p>\n

1. National University of Defense Technology, China   2. Hunan University, China<\/p>\n

This paper investigates SEU robustness of lightweight VGG networks using ReLU_max and L1-based algorithm-level hardening, evaluated via fault injection, heavy-ion, and laser experiments on sub-20 nm FinFET AI chips, revealing compression-dependent hardening effectiveness.<\/p>\n[\/vc_column_text][\/vc_column][\/vc_row]\n","protected":false},"excerpt":{"rendered":"

[vc_row][vc_column][vc_column_text] 2026 IEEE NSREC TECHNICAL PROGRAM POSTER SESSION SCHEDULE PUERTO RICO CONVENTION CENTER, SAN JUAN, PR WEDNESDAY, JULY 22, 2026 [\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]POSTER SESSION[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]POSTER SESSION[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]2:45 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]SESSION INTRODUCTIONChair: Vincent Goiffon (ISAE-SUPAERO)[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]2:50 – 4:50 PM[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text]Poster Session[\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column][vc_column_text] Posters \u2014 Session A [\/vc_column_text][\/vc_column][\/vc_row] [vc_row][vc_column width=”1\/4″][vc_column_text]PA-1[\/vc_column_text][\/vc_column][vc_column width=”3\/4″][vc_column_text] SoC Processor and Memory Proton… Continue reading Technical Program 2026 – Poster Session<\/span><\/a><\/p>\n","protected":false},"author":4,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-9210","page","type-page","status-publish","hentry","entry"],"acf":{"page_header":[{"ID":8749,"post_author":"2","post_date":"2025-09-04 20:34:04","post_date_gmt":"2025-09-04 20:34:04","post_content":"[vc_row][vc_column][vc_empty_space height=\"125px\"][\/vc_column][\/vc_row][vc_row][vc_column width=\"1\/2\"][vc_column_text]\r\n

IEEE Nuclear & Space Radiation Effects Conference<\/h1>\r\n

JULY 20th-24th, 2026<\/h2>\r\n

San Juan, Puerto Rico, USA<\/h2>\r\n[\/vc_column_text][vc_column_text]\r\n
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