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The conference committee would like to invite you to submit your Late News Paper summary to NSREC 2022. The submission portal will reopen April 13, 2022, and summaries will be accepted until May 13, 2022.

Submit Your Late News Paper!

Technical Chair, <a href="mailto:pgouker@ll.mit.edu">Pascale Gouker</a> and her poster chair, Jonathan Pellish, NASA GSFC and workshop chair, Zachary Fleetwood, SpaceX, to your Late News abstract submittals, due May 13, 2022. <a title="#" href="https://www.nsrec.com/call-for-papers/">Please view the Final Call for Papers.</a>

IEEE NSREC 2022 Call for Papers

Please join Aerospace Corporation, Analog Devices, Boeing, CAES, EMPC, EPC Space, L3 Harris, IR HiRel, JPL, Radiation Test Solutions, Renesas, SkyWater Technology, and Southwest Research Institute who are renewing their support for NSREC this year. Please contact <a title="mailto:teresa.farris@archon-llc.com" href="mailto:teresa.farris@archon-llc.com">Teresa Farris</a> if you wish to be a supporter!

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Utah Valley Convention Center

NSREC2021

Marc Gaillardin

Pulsed laser-light, with continuously variable wavelength, is used to study deep-level traps in AlGaN/GaN HEMTs. Single-event transient characteristics vary with wavelength through single-photon absorption, two-photon absorption, and the presence of traps.

Investigation of Deep-Level Traps in AlGaN/GaN HEMTs Using Variable-Wavelength Laser Light

Direct-current current-voltage and high-field electrically detected magnetic resonance measurements reveal differences in atomic scale interface and bulk defect creation in SiO2 gates when comparing devices irradiated with 60Co to unirradiated devices stressed at high fields.

A Comparison of Radiation-Induced and High-Field Electrically Stress Induced Interface Defects in Si/SiO2 MOSFETs via Electrically Detected Magnetic Resonance

The effects of radiation-induced displacement damage on GaN/AlN resonant microelectromechanical systems (MEMS) are reported. The resonance frequencies decrease because of reduction in built-in stress and Young’s modulus, and the GaN/AlN structural deformation.

Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators

Radiation effects of CNT-TFTs under 150 keV proton irradiation are investigated. A high radiation tolerance of 5×1013 p/cm2 is demonstrated, and a deep insight into damage mechanism under higher fluence is given.

Radiation hardness and damage mechanism of carbon nanotube thin film-based field-effect transistors under low-energy proton irradiation

Electrochemical random-access memory (EC-RAM) is an promising non-volatile memory, but its response to total ionizing dose (TID) is unexplored. We expose several ECRAM devices ( PEDOT/PSS bulk) to Co60 gamma radiation and find significant responses

Effects of Total Ionizing Dose on PEDOT/PSS Organic Memory Devices

This work presents electricals characteristics of irradiated MOSFET transistors up to 300krad, at three different temperatures. Transconductance improves with ionizing dose at low temperature due to trapped charges in spacers near LDD regions.

Influence of LDD Spacers on Total Ionizing Dose Response of Bulk MOSFETs at Cryogenic Temperature

Electrical properties deterioration of P-GaN under 150 keV proton irradiation were investigated. It was confirmed that P-GaN is transformed into N-type as fluence increasing. Related main defects generated by irradiation were revealed by PL measurements.

Evolution and mechanism of P-GaN under proton irradiation

β-Ga2O3 Schottky barrier diodes were subjected to 1 MeV proton irradiation up to 1013 p/cm2. Forward-bias characteristics show degradation with increasing fluence. Defect densities resulting from 1 MeV protons are confirmed with TRIM simulations.

Proton-induced Damage in β-Ga2O3 Schottky Barrier Diodes

Ted Wilcox

Basic Mechanisms

Gilles Gasiot

We propose a unified equation that describes both LET and VDD dependence of SRAM SEU cross sections. It comprises only parameters physically defined, indicating the potential for non-beam variation-aware prediction. Heavy-ion experiments suggest its validity.

An SRAM SEU Cross Section Curve Physics Model

We studied energy deposition after ultra-high energy ion irradiation. We prove that the energy increase previously reported in PIPS detectors due to delta electrons occurs only in large sensitive volumes, but not in small volumes.

Energy Deposition by Ultra High-Energy Ions in Large and Small Sensitive Volumes

A method of analyzing ion-induced reverse leakage current in SiC power devices is described, resulting in a model that enables estimation of the number of non-destructive ion strikes and creation of cross-sections from broad-beam data.

Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices

The response of multi-die 3D NAND memories to heavy-ion and proton irradiation as a function of depth and environment is characterized by extending experimentally validated Monte Carlo simulation tools.

Single-Event Effects in Multi-Die 3D NAND Memories

A numerical algorithm for the calculation of proton direct ionization cross-sections based on a linear energy transfer and a straggling model is presented and benchmarked against experimental and simulated data.

Numerical Modeling of Proton Direct Ionization Single Event Effects in Sub-Micron Technology

This paper reports on the calculation of proton SEU cross-sections using heavy-ion data with machine-learning techniques. Model-averaging techniques are applied and improve the accuracy of the calculation.

Using Machine Learning to Determine Proton Cross-Sections from Heavy-Ion Data

A novel, SEE simulation tool has been developed for the radiation effects community. It has been demonstrated and validated by inelastic energy deposition events of 14.8 MeV neutrons measured with a silicon diode detector.

G4SEE: a Geant4-based Single Event Effect simulation tool and its validation through mono-energetic neutron measurements

Heavy ion induced soft errors in SRAM with FinFETs are influenced by events far from average quantities due to straggling and spatial limits. GEANT4 is used to model 16nm FinFET soft error cross sections.

Threshold Contributions to Heavy Ion Soft Error in FinFETs using GEANT4

Focused X-ray single event transient experiments were performed at various angles on an epitaxial silicon diode and are shown to follow the cosine angle dependence observed in traditional heavy ion testing.

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Single Event Effects: Mechanisms and Modeling

John Bird

The response of integrated RF pin diodes to 14-MeV fast neutron and 10-keV X-ray exposure is examined. No significant RF performance degradation is observed, making pin diodes radiation-tolerant candidates for RF systems in space applications.

Response of Integrated Silicon RF pin Diodes to X-ray and Fast Neutron Irradiation

The total-ionizing-dose response of third-generation SiGe HBTs is investigated for irradiation at elevated temperatures, up to 130 C. The devices showed less degradation to irradiation at higher temperatures when biased for forward-active operation.

Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

The radiation effects on the junction leakage random telegraph signal have been studied in MOSFETs junction. In particular, the influences of the radiation type, the design of the junction, and the electric field are discussed.

Radiation Induced Junction Leakage Random Telegraph Signal

Off-state leakage current in Ge GAA nanowires increases with dose due to enhanced band-to-band tunneling caused by charge trapping in STI. NBTI-induced degradation originates primarily from interface- and border-trap generation.

Negative Bias-Temperature Instabilities and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

The TID degradation is investigated in 16 nm bulk FinFETs designed with different numbers of fins and fingers. At ultra-high doses, pFinFETs with the lower number of fins exhibit the worse degradation.

Influence of Fin- and Finger-Number on TID Degradation of 16 nm Bulk FinFETs Irradiated to Ultra-High Doses

We evaluate the resilience of domain-wall magnetic tunnel junction logic devices to total ionizing dose by gamma radiation. While devices are resilient to this effect overall, small magnetoresistance changes are produced by a 1Mrad dose

Investigation of Total Ionizing Dose on Domain-Wall Magnetic Tunnel Junction Logic Devices

Total-ionizing-dose effects are evaluated in vertical-charge-trapping NAND devices with SiON tunneling layers. Trapped holes compensate deeply trapped electrons, but threshold voltages remain large enough to enable successful NV memory application.

Total-ionizing-dose effects on polycrystalline-Si channel vertical-charge-trapping NAND devices with SiON tunneling oxide

We find that bit errors caused by read-noise are significant on irradiated MLC 3D NAND chips. Bit-flip noise was more dominant on cells in an erased state during irradiation compared to programmed cells.

Total-Ionizing-Dose Effects on Read Noise of MLC 3D NAND Memories

Degradation of op-amps in combined and individual environments was explored using simultaneous irradiation with ions and electrons. Input bias and offset currents were lower for the mixed-field irradiation compared to the sum of separate environments.

Exploration of synergistic behavior of operational amplifiers in combined ion and electron environments

RO circuits under dynamic and static test conditions are used to characterize the effects of frequency on TID response. Results show that static conditions overestimate the effects of TID on RO circuits.

Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node

Radiation effect on four type-specific SRAM PUFs was studied in terms of stability and uniqueness. PUF stability can be improved about 2X with smaller cell using cascade PMOS transistors which also makes its uniqueness better.

Ionizing Radiation Effect in SRAM Physical Unclonable Function (PUF) with 4 Type-specific Cells Using 28nm FDSOI

The impact of transient ionizing radiation effects in an SRAM circuit was studied. Results indicate that core supply voltage suffers more serious disturbance. Meanwhile, the voltage disturbance mitigation methods are presented.

Investigation on transient ionizing radiation effects  in a 4Mb SRAM with dual supply voltages

The effects of TID on SRAM Physical Unclonable Functions and implications for authentication are studied through proton irradiation. Unhardened COTS SRAMs exhibit minor negative shifts in the intra- and inter-die Hamming Distance distributions with TID.

Effects of Ionizing Radiation on SRAM Physical Unclonable Functions

The TID effects at room and high temperature are investigated for SOI FinFETs, which are experimentally explained from different trapped-charges in gate oxide. The synergetic effects of TID and temperature worsen degradation for n-SOI FinFETs.

Comparison of Total Ionizing Dose Effects in SOI FinFETs between RT and High Temperature

Vanderbilt University has developed the on-chip Photocurrent Measurement Circuit (PMC), providing a means to capture device-level TID-induced leakage in sub-50nm technologies. Leakage data was gathered using the PMC and is compared to direct measurements.

IN-SITU MEASUREMENT OF TID-INDUCED LEAKAGE USING ON-CHIP CURRENT MODULATION

TID-induced threshold voltage shifts in 22-nm FDSOI NMOSFETs and PMOSFETs are demonstrably mitigated by applying a single back-gate bias to both devices in an isolated P-well configuration. This finding has important applications to RHBD techniques.

Mitigating Total Ionizing Dose Induced Threshold Voltage Shifts using Back-Gate Bias in 22-nm FDSOI Transistors

Radiation Effects in Devices and Integrated Circuits

Amanda Bozovich

Radiation-induced error propagation of a single-board computing system is analyzed at the subsystem-level. A single-event measurement procedure is developed that distinguishes data faults from those occurring in instruction memory and pathways.

MODEL- AND TESTING-BASED ASSURANCE OF CACHE MEMORY OF A SINGLE-BOARD COMPUTING SYSTEM IN RADIATION ENVIRONMENTS

In the context of using the focused x-ray technique for SEE testing of power GaN COTS, we present a simulation-based study of the impact of the package structure on the charge distribution in the active layers as a function of photon energy. Implications for RHA are discussed.

Modelling the Influence of Package in Focused X-ray Testing of Power GaN COTS

Machine learning algorithms are used to detect and correct single-event upsets in an RF receiver carrying modulated data. This approach is able to detect &gt; 95% and correct approximately 50% of upsets.

Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems

We find that data retention property of MLC 3D NAND chips is significantly degraded with irradiation. Erase cells suffer more degradation compared to programmed cells suggesting pre-programming of memory modules before deploying in radiation-prone environments.

Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3D NAND Memories

We propose Generalized Linear Models for understanding errors in SEE rate arising from uncertainties in LET of the ion responsible for the event. Applications are suggested and assessed for suitability of treatment by the model.

Dealing with Ion LET Uncertainties: An Application of Generalized Linear Models

A software-defined radio-based test setup for the radiation effects characterization on radio frequency devices is proposed. The setup is intended to reduce test complexity, equipment and costs, and to improve test automation and flexibility.

Investigation of Radiation Effects in RF Devices based on a Software-Defined Radio Test Setup

We propose a non-charge-based novel data encoding technique that is more resistant to total-ionizing-dose effects than the traditional charge-based storage of NAND flash memory.

Total-Ionizing-Dose Resistant Novel Data Encoding Technique for NAND Memory

Hardness Assurance

Helmut Puchner

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization.

Compendium of Radiation Effects Test Results from NASA Goddard Space Flight Center

Radiation testing was performed on several commercial components to determine the response of these components to the space radiation environment. Testing was performed mostly using low and high energy protons.

The Aerospace Corporation&#039;s Compendium of Recent Radiation Testing Results

The 2020 Workshop Record has been reviewed and 
a table prepared to facilitate the search for radiation response 
data by part number, type, or effect.

Guide to the 2020 IEEE Radiation Effects Data Workshop Record

In this paper we show single event effects and total ionizing dose testing results of Chinese components such as VCOs, RAMs, frequency synthesizer and power device. Results are presented for electronic components with radhard label

Total Ionizing Dose and Single Event Effect Test Results For Chinese Radhard Electronics

This paper presents the results of Total Ionizing Dose (TID) and Single Event Effects (SEE) test campaigns carried out on multiple DDR4 SDRAM components.

Comparative study of TID and SEE results of DDR4 SDRAMs

We present preliminary single event effects (SEE) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM.

Single Event Effects Evaluation of the ST-DDR4  Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)

Single Event Latch-up (SEL) and Total Ionizing Dose (TID) radiation characterization was performed on a Cobham quantified-off-the-shelf (QCOTS) 512Gb 3D NAND flash memory. The device was shown to be suitable for space applications.

SEL and TID Characterization of a Cobham QCOTS 512Gb NAND Flash Nonvolatile Memory for Space Applications

Several commercial SRAMs have been tested by the CERN R2E project with neutrons of various energy. The test data are used to cross-compare facilities and to analyze variabilities within SRAMs from the same manufacturer.

Thermal-to-high-energy neutron SEU characterization of commercial SRAMs

We report the single event performance and low dose rate results of the radiation-hardened ISL73033SLHM gate driver power stage with a 100V enhancement mode GaN FET in single package.

SEE and Total Dose Results of the ISL73033SLHM Dri-GaN Power Stage with 100V GaN FET

Heavy ion testing of homojunction GaN vertical diodes shows a vulnerability to single event burnout and indications that atomic number of the ion species is a dominant factor compared to Linear Energy Transfer.

Single Event Burnout in Vertical GaN Diodes

the single-event response of Xilinx 7nm Versal™ ACAP programmable logic (PL) is characterized using neutron and 64 MeV proton irradiation sources. Single Event Latch, Single-event upset and multi-bits upset results are presented.

Single Event Latchup (SEL) and Single Event Upset (SEU) Evaluation of Xilinx 7nm Versal™ ACAP programmable logic (PL)

Preliminary heavy ion and proton results results are presented for recent-generation AMD and NVIDIA GPUs. Data include Destructive and Non-Destructive Single Event Effects as well as proton TID.

Preliminary Heavy Ion and Proton Test Results for Recent-Generation GPUs

SEU cross-sections of certain functional blocks of 
the Microsemi PolarFire FPGA were tested under proton 
radiation. Suitability for a low earth radiation environment 
is considered.

SEU Characterization of the Microsemi PolarFire Field Programmable Gate Array Functional Blocks using Proton Irradiation

SEE performance of SAMA5D3 is presented. SRAM sensitivity was observed starting at LET ~3 MeV-cm2/mg, with saturated cross section of 2&#215;10-8cm2/bit. Crash sensitivity was similar, with higher sensitivity for Linux compared to bare metal.

SEE Test Results for SAMA5D3

Heavy-ions single event effects on RHA Units with LETEFF of 49 to 75 MeVcm2/mg and Total Ionizing Dose 
including LDR and HDR up to 100 krad(Si) are presented and discussed.

Radiation Evaluation of the Texas Instruments TPS7H4001-SP 18 Amps Buck Converter

Results of Cobalt-60 irradiation of a CMOS low 
dropout voltage regulator at high and low dose rate are, 
presented. Hardness assurance implications due to observation 
of ELDRS for analog CMOS microcircuits are, discussed.

Total Dose Performance at High and Low Dose Rate of a CMOS, Low Dropout Voltage Regulator showing Enhanced Low Dose Rate Sensitivity

Experimentally obtained, that high supply voltages can be considered as the worst case operation condition for LD3985M33R BiCMOS linear voltage regulator in full operation temperature range. Corresponding analysis and explanation are also presented.

Dependence of failure total dose level of BiCMOS linear voltage regulator on supply voltage in wide operation temperature range

Total ionizing dose and heavy ion radiation test results are provided for two commercial MicroModule regulators that have no comparable space-qualified equivalents. Results suggest that these parts may not be suitable for most missions.

Total Ionizing Dose and Heavy Ion Irradiation Test Results of MicroModule Regulators

Results of proton and low dose rate Cobalt-60 irradiation of a switching regulator are presented. Performance in the space radiation environment is discussed.

Single Event Effects and Total Dose Performance at High and Low Dose Rate of a Switching Regulator

We describe a test methodology to adequately identify single event effects (SEE), namely single event transients (SET) and single event functional interrupts (SEFI) in precision SAR ADCs without user configurable registers.

Single-Event Effects Test Methodology for Precision SAR ADCs

The susceptibility to both SEE and TID of the ADS8350 was tested using 105 MeV protons. No SEE was observed while the device failed at a the TID of 25 krad (Si).

SEE and TID Evaluation of the ADC ADS8350 Using Proton Irradiation

The LMK04832-SP is a radiation hardened JESD24B compliant clock conditioner with integrated VCOs that can provide clock signals up to 3.2 GHz on up to 14 outputs. ELDRS and SEE test data are presented.

Total Ionizing Dose and Single Event Effects Test Results of Texas Instruments LMK04832-SP (5962R1722701VXC)  3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs

Heavy Ion testing of the Burr-Brown OPA128 yielded a proposed Safe Operating Area (SOA); non-destructive events were observed and characterized for multiple applications.

Heavy Ion Single Event Effects (SEE) results for OPA128 Electrometer Grade Operational Amplifier

We present observations of heavy ion induced single event effects on the XQE-0920 CMOS imager microcircuit. Pixel upsets as well as upsets accompanying a high level of bias current were observed.

Heavy Ion Induced Single Event Effects Characterization of the XQE-0920 Commercial off-the-shelf CMOS Photonic Imager Microcircuit

We report test results of proton testing on 1550nm optical transceiver modules for intersatellite links. Heavy ion testing is planned for Q1 2021 to further characterize this device for use in space.

Radiation Test Results for the Glenair 0500-3011 DWDM Optical Transceiver

Single event effects measurements were conducted on a ACPL-785E optocoupler at NASA Space Radiation Laboratory. Measurements with a periodic input signal show single event transients and a radiation-induced time delay of the output signal.

Single Event Effects Testing of a Vertical Optocoupler with Unmodified Packaging

This paper reports radiation test results of Total Ionizing Dose (TID) at High Dose Rate and Enhanced Low Dose Rate Sensitivity (ELDRS), as well as neutron displacement damage for the Micropac JANSR4N49BU and JANSR4N49U optocouplers

Radiation Test Results of Total Ionizing Dose, Enhanced Low Dose Rate Sensitivity, and Neutron Displacement Damage for the Micropac JANSR4N49BU and JANSR4N49U Optocouplers

This work presents the TID evaluation of iN14 technology developed by IMEC under gamma irradiations. The impacts of TID on electrical characteristics and on the transistor-to-transistor variability are presented for nFinFET for several gate lengths

Total Ionizing Dose Effects of n-FinFET Transistor in iN14 Technology

Flight data on bipolar junction transistors is recorded and the effect of low dose rate space irradiation on BJTs is studied, leading to results comparable to ground-based testing.

First Results on BJTs in Space: ELDRS Experiment on NASA Space Electronic Testbed

We describe a very low-cost high precision 2D beam scanning system, based on a consumer 3D printer, that is suitable for radiation beam size and uniformity quality assurance measurements.

A Low-Cost High Precision 2D Beam Scanning Device Based on a Consumer 3D Printer

A test chip built on Global Foundries 22FDX technology was investigated for its response to TID and SEE. A radiation-hardened design demonstrated an improvement in the per-bit cross section for a shift register test structure.

Response of a 22FDX Radiation-Hardened-by-Design Test Chip to TID and SEE

Data Workshop

Nadia Rezzak

The sensitivity of 40nm SONOS charge trapping memory to heavy ion induced single event effects is experimentally studied. Threshold voltage distributions of irradiated cells show stronger resilience to single event effects relative to floating-gate memory.

Single event effects induced by heavy ions in SONOS charge trapping memory arrays

A unique method of measuring SET sensitivity in 12-nm FinFET that uses clock SETs on a DFF scan chain to approximately measure the length of the SET is demonstrated and modeled.

Measurement and Modeling of Single Event Transients in 12nm Inverters

Single event cross-section for logic circuits is experimentally investigated at the 7-nm bulk FinFET node. Results for threshold voltage options, supply voltage, frequency, and particle LET are presented and compared with 16-nm node.

Modeling Single-Event Cross-Sections for Logic Circuits at the 7-nm Bulk FinFET Technology Node

Pulsed-laser testing is used to accurately determine SEL thresholds for SRAMs with different body tie to drain spacings on a mixed-signal ASIC, a study which could not be completed using only broad beam heavy-ion testing.

Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs

Negative bias temperature instability aging degradation has been experimentally proven to increase the SEU sensitivity for 28 nm FD-SOI flip-flops. Aging-aware simulation and Monte-Carlo simulation of radiation effects are presented to analyze the underlying mechanisms.

Impact of Aging Degradation on Heavy-ion SEU Response of 28 nm UTBB FD-SOI Technology

We investigate the sources of Detected Unrecoverable Errors (DUEs) in GPUs exposed to neutron beams. Illegal memory 
accesses and interface errors are among the more likely sources of DUEs. ECC increases the launch failure events.

Experimental Findings on the Sources of Detected Unrecoverable Errors in GPUs

Emerging GPU-based System-on-Chip are highly parallel programmable co-processors. An efficient management of their computational resources is a challenging task. Experiments show that the cross-section depends on the parallelization strategy and problem size.

Comparison of parallel implementation strategies in GPU-based System-on-Chip under proton radiation

To measure charge sharing in 14/16 nm bulk FinFET technology, a single event multiple transient (SEMT) test circuitry is designed. The heavy-ion experiment results reveal that charge sharing can induce SEMT.

The measurement of heavy-ion-induced charge sharing in 14/16 nm bulk FinFET technology

A novel radiation tolerant DPU based machine learning design with fault aware training for SRAM based FPGAs, is presented. The proposed radiation tolerant design shows improved single event response vs. baseline design under proton irradiation.

Radiation Tolerant Deep Learning Processor Unit (DPU) based platform using  Xilinx 20nm Kintex UltraScale™ FPGA

Single Event Effects: Devices and Integrated Circuits

Li Chen

The back-gate biases during both irradiation and test on the impacts of total ionizing dose effect in a 0.2 μm Double-SOI technology are studied at both device and circuit level with experiment and TCAD simulation.

Radiation Hardening Using Back-gate Bias in Double-SOI Structure

This work presents a multiprocessor hardened with a macro synchronized lockstep and additional protections. Experimental results with low energy protons demonstrate the high error coverage, reducing the cross section by two orders of magnitude.

Evaluation of a multiprocessor system hardened with macro-synchronized lockstep with FreeRTOS OS using proton irradiation

A high-frequency and low-phase-noise multipath-coupled ring VCO is proposed. The frequency of the VCO ranges from 1.1GHz to 5GHz, and phase noise is 96.7dBc/Hz@1MHz at 2.5GHz. Laser experiments show that the irradiation threshold is 500pJ.

A SET-tolerant Multipath-coupled Ring VCO with Low-phase-noise and High Frequency

We evaluate Reduced Precision TMR under low energy protons using several versions of an FFT IP as a case study. We show that RPR uses less resources and is less prone to Common Mode Failures.