NSREC 2024 Schedule

Grand Ballroom 1

Prof. Matthew Marinella

Grand Ballroom 2-3

 A short course, “Radiation Effects in Modern and Emerging Technologies”, will be presented at the 2025 IEEE Nuclear and Space Radiation Effects Conference. The radiation effects community is encountering changes in devices, circuits, and systems which will give both existing new opportunities for radiation hard electronics, but also create new challenges. This course has been designed to provide both the background and fundamentals combined with the recent findings needed to understand this evolving field. 

The short course is organized into four sections. Each has two subsections that start with the fundamentals resulting from decades of research, follow up with the application of these principles to radiation effects in modern and emerging technologies. The first two sections cover cumulative and transient effects in CMOS, starting with fundamentals and extending into modern technologies. The third section focuses on nonvolatile memory, covering fundamentals and extending the discussion to modern and emerging memories. Finally, the course concludes with a section on a discussion of radiation effects in systems. 

The short course is intended for students, researchers and engineers working in the field of radiation effects and radiation hard electronics. In addition, will be relevant to device, circuit, and system designers and managers involved in implementing these systems. It provides a unique opportunity for IEEE NSREC attendees to benefit from the expertise of excellent instructors, along with a critical review of state-of-the-art knowledge in the field. Electronic copies of detailed course notes will be provided to each participant. Continuing Education Units (CEUs) will be available. For the interested attendees, an exam will be given at the end of the short course. The course is valued at 0.6 CEUs and is endorsed by IEEE and the International Association for Continuing Education and Training (IACET). 

Grand Ballroom 2-3 

The history of cumulative radiation effects on MOSFET and CMOS technologies traces back to the early days of semiconductor devices and their deployment in space and military applications. As CMOS technologies gained prominence in the 1960s and 1970s, researchers observed that ionizing radiation exposure could degrade the performance of these majority carrier devices. This discovery led to an increased focus on understanding the mechanisms of total ionizing dose (TID) radiation-induced damage, typically characterized by trapped charge accumulation in the dielectric and trap buildup at dielectric-semiconductor interface. By the 1980s, as CMOS integrated circuits became more complex, the effects of TID radiation on MOSFETs became a critical area of study, especially for space missions and other high-radiation environments. Early studies of TID effects concentrated on traditional bulk and silicon-on-insulator (SOI) technologies with an emphasis on ionization damage to the relatively thick gate oxides and even thicker buried oxides (used in SOI). As CMOS technologies scaled, the threats posed by ionizing radiation to ever thinner gates oxides began to diminish, leading to greater concentration on sidewall isolating dielectrics, particularly for bulk processes. In the first section of the short course, Prof. Hugh Barnaby of Arizona State University will present the history of TID effects in these older technologies, with a review of the fundamental concepts associated with charge generation, recombination, carrier transport, defect creation and annealing, which are still important today. The second part of the course given by Dr. Marc Gaillardin of CEA will focus on cumulative radiation effects on modern/emerging CMOS, which have made or will make their way into mainstream integrated circuits. These advanced MOSFETs include ultra-thin body SOI (UTBSOI) devices (e.g., partially and fully depleted SOI); Fin-based Field Effect Transistors (FinFETs), and Gate All Around (GAA) Transistors. Recent investigations have shown some recognizable effects but also novel response characteristics that are unique to the very complex structural features, chemistry and material systems used in these advanced process nodes. The course will also review some of the less studied but important concerns encountered in MOSFETs and beyond CMOS transistors that are exposed to cumulative radiation dose such as displacement damage and enhanced low dose rate sensitivity. 

Grand Ballroom Foyer

Grand Ballroom 2-3

Dr. Dennis (Scooter) Ball of Vanderbilt University, and Dr. Jeffrey Black of Sandia National Laboratories, will give a presentation on the multi-tooled approaches to modeling and simulation of single event transients in CMOS technologies. The course will cover the modeling tools being used: Technology Computer Aided Design (TCAD), radiation transport, circuit simulation, and fault injection/emulation. An example will be presented demonstrating how each of the tools are used to reproduce ground-based accelerator experimental data and then used to predict environmental rates. Further examples will be provided showing how single event modeling is done in emerging technologies like FinFETs and Gate All Around (GAA) FETs and what we have learned from modeling results. 

Grand Ballroom 1 or Germantown 1-3

Grand Ballroom 2-3

Flash memories are ubiquitous in all digital systems today and they are also attractive as non-volatile storage in space, because their capacity is unmatched by any rad-hard memory. In the first part of the short course, Prof. Marta Bagatin of the University of Padova will cover the effects of ionizing radiation in Flash memories. After reviewing the operation principles of these devices, total ionizing dose and single event effects will be illustrated. Possible short- and long-term phenomena following radiation exposure both in the memory cells and in the peripheral circuitry will be covered. The course will be supported by experimental data, analysis, and simulations, highlighting the impact of the technological evolution in a journey from traditional, planar devices to the most novel 3D integrated architectures. The physics of radiation effects in emerging non-volatile memories is often fundamentally distinct from effects on commercial NAND flash and other CMOS electronics. For the non-charge-based memories, this implies very high intrinsic radiation tolerance, making them attractive for applications in space and other high-radiation environments. Furthermore, as the end of Moore’s law has slowed progress in computer processors, there has been significant research momentum to repurpose these emerging memories as low-power analog computational devices. However, using a traditionally binary memory as an analog memory can greatly increase radiation sensitivity. In the second half of this short course, Dr. T. Patrick Xiao of Sandia National Laboratories will review the current understanding of the effects of ionizing radiation and displacement damage on charge-trapping memory, magnetic memory, resistive memory, phase change memory, and electrochemical memory. This course will also review the operation and design principles of analog in-memory computing systems and how the accuracy of analog computing is affected by radiation effects. 

Grand Ballroom Foyer

Grand Ballroom 2-3

In the first part of this course, prepared in collaboration with Prof. Mike Wirthlin and Prof. Jeff Goeders, both of BYU will discuss radiation effects in modern, complex systems, with a focus on FPGAs, GPUs, and SoCs. These types of commercial off-the-shelf (COTS) devices are increasingly being used in space and other radiation environments due to their high performance, low cost, and rich features. However, these devices are subject to various single-event effects (SEEs) and total ionizing dose (TID) effects, which can manifest as silent data corruption, system crashes and hangs, and permanent damage. The complexity of these devices makes it difficult to model and predict their radiation response, as the devices typically contain substantial internal state and complex interactions between components. Radiation testing of such systems requires substantial effort, time and expertise in developing appropriate test frameworks. This course will discuss both the radiation effects in these systems, as well as different strategies and lessons learned in how to effectively test and characterize these devices. In the second half of this course, Prof. Fernando Fernandes from INRIA, with the support of Prof. Paolo Rech from the University of Trento, will discuss the reliability challenges of adopting emerging post-Von Neumann architectures in safety-critical applications and space missions. While existing hardware architectures offer high computational performance, the memory bottleneck remains a limiting factor for energy efficiency and scalability since, in most applications, including AI, most of the power is wasted on data movement. New technologies such as processing in-memory and neuromorphic computing are emerging as alternatives to existing ones. Unfortunately, characterizing radiation effects and fault models on emerging hardware is challenging as conventional evaluation methods are not suitable for the task. The challenges include not only fault identification and correction but also designing radiation tests and qualification methodologies for emerging architectures. 

Prof. Matthew Marinella

Grand Ballroom 2-3

Only for students requesting CEU credit

Grand Ballroom 1

Grand Ballroom 2-3

Dolores Black, Sandia National Laboratories, General Chair

 

Kay Chesnut, Raytheon Technologies, Radiation Effects Steering Group, Executive Chair

 

Andrew Sternberg, Vanderbilt University

Grand Ballroom 2-3

 

Sapan Agarwal, Sandia National Laboratories 

 

Grand Ballroom 2-3

B. Coelho1, M. Saveriano1, M. Tali2, C. Frost3, M. Donetti4, M. Pullia4, E. Verroi5, F. Tommasino1, S. Bounasser6, C. Poivey2, P. Rech1

  1. University of Trento, Italy
  2. ESA, Netherlands
  3. ISIS Neutron and Muon Facility, United Kingdom
  4. CNAO, Italy
  5. TIFPA, Italy
  6. ESA, France

We test large machine learning models on TPUs at 5 different radiation facilities to identify particle, software, and hardware-dependent reliability behaviors and reduce the variable space to qualify the reliability of neural networks.

D. Sam1, J. Teng2, B. Ringel1, P. Francis1, J. Moody1, J. Shin1, Z. Brumbach1, A. Ildefonso3, A. Khachatrian4, T. Crane5, D. Mcmorrow4, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Indiana University Bloomington, USA
  4. US Naval Research Laboratory, USA
  5. Jacobs, Inc. and US Naval Research Laboratory, USA

The SETs of standalone circuits of a fully analog SiGe PLL are used to understand system-level SET responses and determine the circuit whose SET response is the most impactful to the output of the PLL.

S. Tolson1, J. Kronenberg1, N. Pieper1, Y. Xiong1, D. Ball1, B. Bhuva1

  1. Vanderbilt University, USA

Single-event upset cross-sections are investigated as a function of the number of fins in a transistor at the 3-nm node. Results show that one-fin D-FF designs are less vulnerable than similar two-fin D-FF designs under identical conditions

Broadway Ballroom

Chair: Rebekah Austin (NASA Goddard Space Flight Center)

D. Hansen1, B. Kimbrell1, T. Manich1, C. Pownell1, I. Zavatkay1

  1. L3 Harris, USA

This paper reviews guidelines for depth parameter selection in rate calculation and compares them to published on-orbit data. Current guidelines result in underestimates for some modern devices.

J. Carpenter1, D. Loveless1, A. Ildefonso1, J. Hales2, D. Mcmorrow2, T. Peyton1, S. Westfall1, J. Lazenby1

  1. Indiana University, USA
  2. NRL, USA

Dynamic time warping (DTW) is used to analyze ASETs, enabling discrimination based on radiation source, LET, and strike location. Heavy-ion and laser-QBB data show that DTW enables cross-source correlation while enhancing insight into circuit behavior.

P. Oldiges1, N. Domme1, R. Zedric1

  1. Sandia National Laboratories, USA

We perform an analysis of multiple single events in individual bits of memory during SEU testing.  Large numbers of multiple strikes can be accounted for, even with asymmetry in the logic state upset cross-section.

G. Tzintzarov1, J. Teng1, A. Kulkarni2, A. Bushmaker1, P. Musumeci2, M. Looper1, D. Daniel1, M. Voegtle1, R. Berry3, S. Milton4, G. Allen5

    1. The Aerospace Corporation, USA
    2. UCLA, USA
    3. RadiaBeam, USA
    4. Tau Systems, USA
    5. NASA JPL, USA

S. El hajji1, G. Gasiot1, T. Thery1, V. Correas1, N. Pieper2, Y. Xiong2, J. Kronenberg2, J. Autran3, B. Bhuva2, D. Pandini4, V. Malherbe1, P. Roche1

  1. STMicroelectronics, France
  2. Vanderbilt University, USA
  3. Univ Rennes, CNRS, IPR (Institut de Physique de Rennes) - UMR 6251, France
  4. STMicroelectronics, Italy

A fast 3D Poisson equation solver optimized for FinFET architectures has been integrated into the TIARA simulation platform. SEU predictions of a 3nm FinFET flip-flop exposed to heavy ions are made and compared with experiments.

R. Garcia Alia1, M. Sacristan Barbero2, D. Lucsanyi2, A. Waets1, K. Bilko1, M. Cecchetto1, M. Delrieux1, N. Emriskova3, D. Prelipcean1, I. Slipukhin1, D. Soderstrom1, F. Ravotti1, L. Esposito1, F. Cerutti1, S. Gilardoni1, M. Sivertz4, S. Kodaira5, F. Saigné6

  1. CERN, Switzerland
  2. Univ. Montpellier, CERN, Switzerland
  3. CERN, Univ. Montpellier, Switzerland
  4. NSRL-BNL, USA
  5. National Institutes for Quantum Science and Technology (QST), Japan
  6. Université de Montpellier, France

We extend the fragmented SEE benchmark to include additional ions (beyond lead) and effects (beyond SEU) and apply the same simulation framework to estimate the beam contaminant impact on ground-based high-energy SEE measurements

Lunch on Your Own

-OR-

WOMEN IN ENGINEERING LUNCHEON  (Ticket Required)

Chair: Damien Lambert (CEA)

Grand Ballroom 2-3

M. Roche1, H. Boiron2, T. Maraine3, E. Marin4, A. Meyer5, D. Lambert6, P. Paillet6, J. Boch3, F. Saigné3, A. Morana4, Y. Ouerdane7, A. Boukenter4, S. Girard7

  1. Laboratoire Hubert Curien - CEA DAM, France
  2. Exail, France
  3. Université de Montpellier, France
  4. Laboratoire Hubert Curien, France
  5. Université Jean Monnet, France
  6. CEA, France
  7. Université de Saint Etienne, France

We investigate the growth kinetics of the radiation induced attenuation of 25-km long commercial Ge-doped optical fiber coils during a long-term gamma irradiation at different very low dose rates.

B. Ringel1, P. Francis1, J. Teng2, M. Hosseinzadeh1, D. Sam1, Z. Brumbach1, J. Shin1, A. Ildefonso3, A. Khachatrian4, D. Mcmorrow4, J. Hales5, T. Crane5, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Department of Intelligent Systems Engineering, Indiana University, USA
  4. US Naval Research Laboratory, USA
  5. Jacobs, Inc. and U.S. Naval Research Laboratory, USA

The SET response of MRMs is evaluated following carrier injection by laser pulses. Optical signals experience transient phenomena plausibly due to carrier and temperature changes. MRMs exhibit SET sensitivity potentially relevant for harsh environment operation.

M. Hosseinzadeh1, J. Teng2, B. Ringel1, Y. Mensah1, D. Sam1, Z. Brumbach1, A. Ildefonso3, T. Crane4, A. Khachatrian5, D. Mcmorrow5, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Indiana University Bloomington, USA
  4. Jacobs, Inc., USA
  5. US Naval Research Laboratory, USA

An integrated optical transceiver in a silicon ePIC platform is exposed to pulsed-laser-induced TPA. SEE sensitivity of subsystems and the full-system is investigated, with a numerical model comparing link sensitivity to different propagating SET types.

A. Plocina1, V. Goiffon1, O. Marcelot1, S. Rizzolo2, D. Marchais2, O. Saint-pe2, J. Pratlong3

  1. ISAE-SUPAERO, France
  2. Airbus Defence and Space S.A.S., France
  3. Teledyne e2v, United Kingdom

This study reveals the impact of low temperature on-ground irradiation and annealing on pixel dark currents, activation energies and RTS pixels in silicon detectors, and compares these data to room temperature irradiation test results.

C. Bryant1, D. Huang2, K. Arnold1, H. Dattilo1, D. Fleetwood1, R. Schrimpf1, E. Zhang2, P. Harris1, J. Trippe1, M. Alles1, D. Ball1, S. Weiss1, P. Delfyett2, R. Reed1

  1. Vanderbilt University, USA
  2. University of Central Florida, USA

The threshold current and the emission wavelength of AlGaInAs-InP lasers change significantly with increasing proton fluence. The observed emission wavelength shift is attributed to defects located in the bandgap, rather than increases in series resistance.

Broadway Ballroom

Broadway Ballroom

Grand Ballroom 1

 

No Content

Chair: Aymeric Privat, onsemi

 

 

A. Vidana1, C. Mckay1, N. Dodds1, T. Wallace1, J. D’amico1, J. Joffrion1, N. Nowlin1, P. Oldiges1, K. Sapkota1, H. Barnaby2, D. Hughart1

  1. Sandia National Laboratories, USA
  2. ASU, USA

We present a room temperature, ultra-fast electrical rapid annealing (ERA) method that achieves near-complete recovery of TID-induced degradation in at least two FinFET technologies. Work is ongoing to understand the recovery mechanism and reliability impacts.

R. Baltazar Felipe1, J. Ermi1, H. Hunnicutt2, J. Tyler2, I. Hudson1, B. Himebaugh1, D. Reising2, D. Loveless1

  1. Indiana University Center for Reliable and Trusted Electronics, USA
  2. University of Tennessee at Chattanooga, USA

Total-ionizing dose effects on specific emitter identification and authentication of wireless transmitters are investigated. Co-60 experiments reveal degradation in the ability to classify software-defined-radio transmitters post-irradiation and suggest likely failure mechanisms within the local oscillator.

Broadway Ballroom

Z. Brumbach1, D. West1, D. Sam1, J. Shin1, S. Dasari1, G. Ashley1, B. Ringel1, J. Teng2, P. Harris3, M. McCurdy3, R. Reed3, G. Allen4, N. Ghalichechian1, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Vanderbilt University, USA
  4. JPL, USA

The effects of TID and SEE on vanadium dioxide (VO2) millimeter-wave switches were measured and analyzed. No evidence of the high-speed, low-loss VO2 switches changing states, or degrading was observed.

J. Schaffner1, M. Caplinger1, M. Ravine1, L. Lipkaman vittling1, D. Krysak1, C. Hansen2, S. Madsen3, A. Berkun3, B. Rax3, M. Johnson3, E. Sturm3, J. Delavan4, H. Yonter4, S. Bolton5

  1. Malin Space Science Systems, USA
  2. Planetary Science Institute, USA
  3. Jet Propulsion Laboratory, California Institute of Technology, USA
  4. Lockheed Martin Space, USA
  5. Southwest Research Institute, USA

After eight years in the Jovian radiation environment, well past its design life, JunoCam suffered a series of anomalies due to radiation dose. Annealing, by heating, has recovered the instrument and extended its useful life.

M. Chen1, Y. Huang1, Y. Wu1, F. Liu1, B. Li1

  1. Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics of the Chinese Academy of Sciences, China

The total ionizing dose response of n-type vertical C-shaped-channel nanosheet FETs (n-VCNFETs) are investigated. First experimental study reveals n-VCNFETs exhibit ≥ 500 krad(Si) radiation tolerance through self-healing or layout optimization, enabling LEO satellite applications.

Broadway Ballroom

Chair: Matthieu Beaumel, SODERN

 

 

M. Sacristan Barbero1, R. Garcia2, I. Slipukhin2, D. Soderstrom2, K. Bilko3, N. Emriskova2, A. Waets2, D. Prelipcean2

  1. CIEMAT - CERN, Switzerland
  2. CERN, Switzerland
  3. Université Jean Monnet, France

This summary presents the results of several SEE measurements performed in two Single Event Effect testing facilities, such as CERN and NSRL. Besides, the results are compared to those obtained in another standard SEE facility like RADEF.

D. Bennett1, V. Pan1, J. Vohradsky1, L. Tran1, D. Bolst1, K. Aoki2, T. Nakaji2, H. Mizuno2, H. Takei2, T. Inaniwa2, I. Anokhin3, M. Lerch1, M. Petasecca1, A. Rosenfeld1

  1. University of Wollongong, Australia
  2. Quantum Science Technology, Japan
  3. Institute for Nuclear Research, Ukraine

We’ve demonstrated that a newly developed p-i-n diode’s response is proportional to displacement damage dose, is energy and ion type independent and can be used as a damage monitor in a mixed space radiation environment.

A. Zimmaro1, R. Ferraro1, S. Fiore1, A. Masi2, S. Danzeca2

  1. CERN, France
  2. CERN, Switzerland

This paper presents a study of a new radiation sensor embedded in the new wireless IoT radiation monitoring system for electronics. Its advantages in terms of measurement uncertainty and radiation tolerance are presented

F. Fricano1, A. Morana1, C. Hoehr2, C. Campanella1, C. Bélanger-champagne2, M. Trinczek2, G. Melin3, T. Robin4, D. Lambert5, A. Boukenter1, E. Marin1, Y. Ouerdane1, P. Paillet5, S. Girard6

  1. Laboratoire Hubert Curien, France
  2. TRIUMF, Canada
  3. iXblue, France
  4. EXAIL, France
  5. CEA, France
  6. Université de Saint Etienne, France

We compare the performances of nitrogen doped silica-based optical fibers, one pristine and one pre-irradiated to monitor proton beams. Pre-irradiation results in sensitivity enhancement and improvements in Bragg peak reproduction, limiting quenching effect.

Chair: Enxia Zhang, University of Central Florida

PA-1    The Research on 22 nm UTBB-FDSOI SRAM MCUs with Staggered Well under Back-Bias of 0 V

L. Tongde1, Z. Yuanfu2, Z. Yong-qin1, Y. Jing-shuang1, A. Paccagnella3, W. Liang1

  1. Beijing Microelectronics Technology Institute, China
  2. China Academy of Aerospace Electronics Technology, China
  3. University of Padua, Italy

This paper investigated the MCU characteristics of nano-scale FDSOI SRAM under different incident directions and angles. According to the experimental and numerical simulation results, the charge collection mechanisms were discussed.

 

PA-2    Neutron-induced Single Event Effects in 3D Managed NAND Memories

D. Peyronel1, G. Lama1, M. Valla1, M. Kastriotou2, C. Cazzaniga2, M. Bagatin3, S. Gerardin4

  1. Micron Semiconductor Italia Srl, Italy
  2. STFC, United Kingdom
  3. University of Padova, Italy
  4. DEI - Padova University, Italy

The sensitivity of 3D managed NAND Flash memories to atmospheric spectrum neutrons has been investigated, with a focus on the functional elements that lead to single event functional interrupts and user data corruption.

PA-3    Versal ACAP AI Engine Heavy Ion Testing with Spill Synchronization

Price1, G. Smith1, M. Wirthlin1

  1. Brigham Young University, USA

This work presents the heavy ion of the AI/ML engines within the Versal Core and Edge series devices. This approach tests the hundreds of AI engines within these devices simultaneously and synchronously with beam spills.

PA-4    The Effect of Heavy Ions on Inference Accuracy on the IBM NorthPole

F. Viramontes1, V. Vergara2, A. Romero1, M. Spear3, W. Slater3, H. Quinn3

  1. UNM COSMIAC, USA
  2. Blue Halo, USA
  3. Air Force Research Laboratory, USA

This abstract covers a heavy-ion test that was recently performed on the IBM NorthPole. SEFI and SEU cross sections of the device are discussed, as well as the effect of heavy-ions on AI/ML inference accuracy.

PA-5    Input and Clock State Dependence of D-FF SEU Vulnerability at 3-nm Bulk FinFET Node

J. Kronenberg1, N. Pieper1, Y. Xiong1, D. Ball1, B. Bhuva1

  1. Vanderbilt University, USA

SERs for D-FFs in a 3-nm technology show differences based on stored data, indicating state-dependent Qcrit values. Simulations show differences in charge collection by n- & p-hits, and design asymmetry are primary factors determining state-dependent SERs.

PA-6    Charge Generation Correlation in Silicon PN Diodes for Heavy Ions vs. Two-Photon Absorption

R. Rodriguez-Davila1, A. Carillo-Osuna1, T. Moise1, B. Gnade1, R. Baumann1, M. Quevedo-Lopez1

  1. The University of Texas at Dallas, USA

Bessel-focusing two-photon absorption (TPA) in silicon diodes accurately simulates the effects of heavy ion radiation, offering a cheaper and more accessible alternative for evaluating single event effects in semiconductor devices.

PB-1    Novel Statistical Method for Quantifying the Uncertainty on the Measurement of Single Event Effects

N. Rostand1, A. Losquin1, T. Jarrin1, O. Duhamel1, J. Rebourg1

  1. CEA, France

We develop a novel statistical method providing guarantee on the uncertainty on the number of Single Event Effects measured during experiments. Comparison with the literature is exposed through SEU/SET experimental data on elementary electronic cells.

PB-2    Bounding SEL Rates for Null Results and Other Limited Test Data

R. Ladbury1, M. Joplin1, J. Lauenstein1

  1. NASA Goddard Space Flight Center, USA

We exploit trends observed in historical archives of SEL test data to develop methods for bounding SEL rates based on null heavy-ion test results and other minimally constraining test data.

PB-3    Principles for Selecting Pulsed-Laser Operating Parameters to Predict Heavy-Ion SEE Response

A. Ildefonso1, J. Hales2, D. Mcmorrow2

  1. Indiana University Bloomington, USA
  2. U.S. Naval Research Laboratory, USA

This work establishes quantitative principles for determining when a pulsed-laser test configuration can predict ion-induced single-event effects. Validated experimentally, these principles provide a systematic framework for assessing the ability of any surrogate test approach to be predictive.

PB-4    Error Pattern Analysis of Commercial Ferroelectric RAM under Total Ionizing Dose Effects

M. Ahmed1, J. Bell1, A. Brandl1, B. Ray1

  1. Colorado State University, USA

Commercial FeRAM exhibits data corruption from 50 krad(Si), with an overall error rate (~0.01%) at 500 krad(Si). Errors are asymmetric, with stored ones experiencing significantly more bit-flips than stored zeros.

 

PC-1    Total ionizing dose effects on a PbS-QD-based CMOS direct-conversion X-ray image sensor

C. Zhang1, V. Goossens2, A. Neyret3, R. Quaglia1, V. Goiffon3, A. Shulga2, P. Rüedi1

  1. CSEM SA, Switzerland
  2. QDI Systems, Netherlands
  3. ISAE-SUPAERO, France

This work presents the first observation of ionizing radiation effects on the first PbS-QD-coated CMOS X-ray image sensor from the evolution of dark current, X-ray sensitivity, spatial resolution, and X-ray imaging capability under X-ray irradiation.

PC-2    Dark Current and Random Telegraph Signal Degradation Induced by Proton Radiation in a Long-Wave HgCdTe Infrared Sensor

T. Friess1, E. De Borniol2, A. Antonsanti3, N. Baier2, A. Rouvie4, A. Le Roch4, V. Goiffon3, S. Rizzolo5, O. Gravrand2

  1. CNES / CEA Leti / ISAE Supaero / Airbus DS, France
  2. CEA Leti, France
  3. ISAE-SUPAERO, France
  4. CNES, France
  5. Airbus Defence and Space S.A.S., France

Dark current and Random Telegraph Signal degradations were analyzed in an HgCdTe Long-Wave InfraRed (LWIR) sensor after proton irradiation. The evolution of those mechanisms was evaluated after different annealing temperatures.

PC-3    Bias and Geometry Dependent Ionization Effects on Waveguide-Integrated Germanium-Silicon Vertical p-i-n Photodiodes

A. Veluri1, K. Arnold1, S. Musibau2, A. Tsiara2, K. Croes2, D. Linten2, J. Vancampenhout2, S. Kosier1, R. Schrimpf1, D. Fleetwood1, R. Reed1, S. Weiss1

  1. Vanderbilt University, USA
  2. imec, Belgium

We investigated ionization effects on Ge-Si VPIN photodiodes under 10-keV X-ray irradiation. Localized P+ doping shows 75% higher dark current sensitivity, while smaller Ge width shows stronger bias-dependent increase. Fast room-temperature recovery confirms space-based viability.

PC-4    Fundamental Mechanisms of Total-Ionizing-Dose Response in Waveguide-Coupled Ge-on-Si PIN Photodiodes

S. Musibau1, K. Arnold2, A. Veluri2, A. Tsiara3, J. Franco3, K. Croes3, D. Linten3, J. Van campenhout3, S. Weiss2, R. Schrimpf2, D. Fleetwood2, S. Kosier2, I. De wolf1, R. Reed2

  1. imec and KU Leuven, Belgium
  2. Vanderbilt University, USA
  3. imec, Belgium

Calibrated TCAD simulations of total-ionizing-dose effects in vertical Ge-on-Si photodiodes reveal dominant charge trapping at top-corner Ge/SiO2 interfaces, enhancing local electric fields, Shockley-Read-Hall generation/recombination rates and trap-assisted tunneling currents.

PC-5    Radiation Reliability of the White LEDs of the MMX mission on Phobos

L. Weninger1, G. Ciachera1, M. Darnon1, A. Morana1, F. Fricano1, V. Lalucaa2, J. Belloir2, C. Durnez2, C. Virmontois2, N. Kerboub2, J. Mekki2, Y. Morilla3, P. Martin Holgado3, A. Romero Maestre3, M. Gaillardin4, O. Duhamel4, P. Paillet4, S. Girard5

  1. Laboratoire Hubert Curien - UJM, France
  2. CNES, France
  3. Centro Nacional de Aceleradores (CNA), Spain
  4. CEA, France
  5. Université de Saint Etienne, France

This work presents the results on the external quantum efficiency degradation under various ionizing radiations of the white LEDs selected for the illumination system of the cameras of the MMX mission rover on Phobos.

PD-1    TID-Induced Degradation in 3-nm FinFET SRAM Cell Retention

N. Pieper1, J. Kronenberg1, Y. Xiong1, J. Pasternak2, D. Ball1, B. Bhuva1

  1. Vanderbilt University, USA
  2. Synopsys, Inc., USA

TID-induced degradation in SRAM cell stability is measured in a commercial 3-nm bulk FinFET node. TID-induced increases in data retention voltages for 3-nm cells are observed to be greater than that for 5-nm SRAM cells.

PD-2    Evidence for Single-Particle Displacement Damage in 14-nm FinFET SRAMs

Y. Xiong1, J. Kronenberg1, J. Xiong2, J. D’amico2, A. Vidana2, N. Pieper1, G. Vizkelethy2, N. Dodds2, N. Nowlin2, B. Bhuva1

  1. Vanderbilt University, USA
  2. Sandia National Laboratories, USA

Experiments on 14-nm FinFET SRAMs reveal that single-ion-induced displacement damage causes stuck memory bits in 1-fin bitcell designs, but not in 2-fin bitcell designs. Failure mechanisms are identified and discussed using experimental results and simulations.

PD-3    Strategic Input Selection For Deep Neural Networks Reliability Evaluation

L. Roquet1, F. Fernandes dos Santos1, M. Kastriotou2, A. Kritikakou1

  1. IRISA/Inria Rennes, France
  2. ISIS Neutron and Muon Source, United Kingdom

We present a robust methodology for selecting inputs for DNNs in radiation experiments. Using our approach, we obtained a 12.19× higher DNN misclassification rate on average compared to the commonly used random input selection.

PD-4    Degradation of Charge Transport in Irradiated FDSOI Devices at Cryogenic Temperatures

F. Mamun1, M. Spear2, J. Solano3, J. Neuendank1, M. Turowski4, H. Barnaby1, I. Esqueda1

  1. Arizona State University, USA
  2. Airforce Research Lab, USA
  3. MOOG Space and Defense, USA
  4. Alphacore Inc, USA

This work establishes the impact of radiation on the transport properties of FDSOI devices at cryogenic temperatures. A quasi-ballistic transport model reveals bias-dependent degradation in mobility attributed to charge buildup in the buried oxide.

PD-5    To Explore the Future of Quantum ICs for Space applications: A Study on Cryogenic Behavior of X-ray Irradiated 22nm FD-SOI MOSFETs

J. Zhao1, Y. Qing1, Z. Li2, M. Gorbunov2, Q. Ma1, L. Marien1, M. Zhang1, T. Maraine3, F. Saigné3, J. Prinzie1, P. Leroux1

  1. KU Leuven, Belgium
  2. IMEC, Belgium
  3. Université de Montpellier, France

This study explores 22-nm FD-SOI MOSFETs under X-ray irradiation at 20 K. NMOSFETs recover, but PFETs show increased Vth. A transimpedance amplifier analysis highlights radiation challenges for quantum ICs in space applications.

PD-6    Investigation of the Degradation Mechanism of LDMOS Under Electromagnetic Pulse

S. Guan1, Y. Wu2, L. Shu2, F. Liu2, H. Zhang1, X. Wei1

  1. Beijing University of Posts and Telecommunications, China
  2. Institute of Microelectronics of China Academy of Sciences, China

This work investigates Electromagnetic Pulse(EMP) damage mechanisms in LDMOS transistors for varying conditions. Neural networks and electromagnetic leakage signal have been used to achieve damage classification of LDMOS with EMP.

PD-7    Ionizing Dose Effects on DNA Data Storage Nanoplatforms

L. Sala1, K. Cardos1, V. Olšanský2, D. Chvátil2, F. Chevalier3, V. Vizcaino3, A. Méry3, J. Kočišek1

  1. J. Heyrovsky Institute of Physical Chemistry of the CAS, Czech Republic
  2. Nuclear Physics Institute of the CAS, Czech Republic
  3. Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, France

DNA origami nanoplatforms for data storage were exposed to ionizing radiation to identify structural vulnerabilities. This analysis contributes to optimizing these nanoplatforms and advancing methods to enhance data integrity and long-term preservation.

PE-1     Space Weather Launch Commit Criteria Study for Heavy Ion Susceptible Avionics

A. Destefano1, J. Martin2

  1. NASA, USA
  2. Amentum, USA

In this work, we study the effectiveness of a space weather launch commit criteria based on proton fluxes on mitigating risk due to avionics that are susceptible to heavy ions.

PE-2     Comparison of Active and Passive Adjustment of the Entrance Energy of Synchrotron Ions for Single Event Effect Testing

M. Eizinger1, W. Treberer-treberspurg2, P. Schieder2, A. Hirtl3, B. Seifert1

  1. Fotec Forschungs- und Technologietransfer GmbH, Austria
  2. University of Applied Sciences Wiener Neustadt, Austria
  3. Atominstitut, TU Wien, Austria

We compare two methods for varying the Bragg peak depth of carbon ions in silicon. Inserting passive degraders achieves finer resolution compared to variation of the initial energy, at the cost of stronger parasitic effects.

PE-3     Quenching Corrections for Proton-Irradiated Scintillators Using Geant4 Simulations of LET

E. Auden1, J. George1, A. Hoover1, C. Delzer1, G. Riley1, F. Liang1, T. Espinoza1

  1. Los Alamos National Laboratory, USA

Proton quenching effects in scintillators reduce light output similar to charge collection effects for high density particle tracks in silicon devices. We compare experimental and Monte Carlo quenching results in YSO and discuss quenching parameterization.

PE-4     Radiation Detection Based on Transient Non-equilibrium Body Potential under SOI-SBFETs Configuration

T. Zhang1, F. Liu1, L. Shu1, S. Chen1, Y. Huang1, Y. Wu1, J. Wan2, Y. Xu3, Y. Ding4, B. Li1, Z. Han1, T. Ye1

  1. The Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China, China
  2. School of Microelectronics, Fudan University, China
  3. School of Microelectronics, Nanjing University of Posts and Telecommunications, China
  4. China Institute of Atomic Energy, China

A new transient method has been adapted to detect γ-ray. This method relies on non-equilibrium body potential, which shows advantages in fast testing, low process cost, and simple data processing.

PE-5     A Method for Low-Cost Cold Total Ionizing Dose Dosimetry and Irradiation

S. Katz1

  1. Johns Hopkins University Applied Physics Laboratory, USA

Irradiating samples on dry ice in an insulated box reduces the complexity, expense of, and space required for cold radiation testing of electronics. Polyethylene simulant allows dosimetry at room temperature prior to irradiation.

PF-1     TID Degradation Mechanisms in Gate-All-Around Silicon Nanowire FETs

C. Champagne1, D. Ball1, J. Trippe1, R. Ritzenthaler2, J. Mitard2, D. Linten2, L. Massengill1, S. Kosier1, R. Reed1, E. Zhang3, M. Alles1, S. Bonaldo4, D. Fleetwood1, B. Sierawski1

  1. Vanderbilt University, USA
  2. imec, Belgium
  3. University of Central Florida, USA
  4. University of Padova, Italy

TCAD analysis of the contributions of gate and spacer oxides to the measured TID response of nanowire FETs indicates that the gate oxide is a significant degradation driver. Results are com-pared with previous technology nodes.

PF-2     An Implicit Radiation-Aware Surface Potential Model for FDSOI CMOS Technologies

I. Livingston1, I. Esqueda1, H. Barnaby1, M. Spear1, J. Solano1, T. Wallace1

  1. Arizona State University, USA

An implicit defect-based surface potential model is presented for fully-depleted silicon-on-insulator MOSFETs. The accuracy of this model is compared to experimental data on devices from a commercial 22nm FDSOI process after total ionizing dose exposure.

PG-1    Impact of Hot-Carrier Diffusivity on Single-Event Upsets in Highly Scaled FinFETs

J. Vielmette1, D. Ball1, J. Trippe1, G. Walker1, M. Fischetti2, D. Nielsen2, M. Alles1, K. Nagamatsu3, R. Schrimpf1

  1. Vanderbilt University, USA
  2. University of Texas at Dallas, USA
  3. Northrop Grumman Systems Corporation, USA

Sensitivity of charge collection in scaled finFET devices to the assumed thermalization rate of radiation-induced hot carriers is demonstrated. Full-band Monte Carlo simulations validate current approaches to simulating single-event effects using drift-diffusion tools

PG-2    Evaluation of Single-Event Effects on Sub-20nm FinFET based AI Chips

F. Shuanglin1, L. Bin1, W. Xun1, C. Yaqing1, C. Jianjun1, L. Deng1, Y. Guofang1

  1. College of Computer Science and Technology, National University of Defense Technology, China

Through results of heavy-ion and laser pulse testing, the Single-Event Effect (SEE) performance of neural network algorithms on sub-20nm AI chips was summarized, and the characteristics of SEE were revealed.

PH-1    System-Level SEU Hardening of Wireless Receivers through Modulation Scheme Selection

J. Shin1, J. Teng2, Z. Brumbach1, B. Ringel1, D. Sam1, A. Ildefonso3, T. Crane4, A. Khachatrian5, D. Mcmorrow5, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Indiana University Bloomington, USA
  4. Jacobs, Inc., USA
  5. US Naval Research Laboratory, USA

Pulsed-laser SEE testing is utilized to evaluate SEU-hardening of a SiGe wireless receiver through modulation scheme selection. Results demonstrate that intentionally selecting modulation schemes based on known component sensitivity can reduce system-level SEU rates.

PH-2    Total Dose Hardening Using a Sensitive Circuit Identification Methodology in a DC-DC Converter

M. Murillo1, R. Milner2, B. Dean1, J. D’amico1, T. Tengberg2, A. Witulski1, M. Alles1, S. Kosier1, J. Trippe1, T. Holman1, D. Ball1, M. Hu1, A. Fayed2, L. Massengill1

  1. Vanderbilt University, USA
  2. The Ohio State University, USA

Data-calibrated models of TID effects were used to simulate radiation effects in a DF-SIMO buck converter. Through this, a method of “sensitive circuit” identification was developed to efficiently simulate TID effects mitigation.

PH-3    Optimized Dynamic Back-Biasing Strategy to Improve TID Tolerance in Conventional-Well 22nm FDSOI Transistors

B. Dean1, M. Hu1, T. Haeffner2, J. Kauppila2, M. Alles1, J. Trippe1, D. Ball1, B. Sierawski1, T. Holman1, S. Kosier1, L. Massengill1

  1. Vanderbilt University, USA
  2. Reliable MicroSystems, USA

An optimizable back-biasing strategy for TID mitigation is presented based on 22nm FDSOI transistor data obtained with in situ back-bias variation, resulting in a calculated maximum survivable dose increase of over 35%.

PI-1      Single Ion-Induced Damage in Gallium Nitride High Electron Mobility Transistors

J. Gray1, A. Sternberg1, J. Kauppila2, D. Ball1, J. Trippe1, S. Kosier1, A. Witulski1, M. Alles1, J. Davidson1, R. Schrimpf1, L. Massengill1

  1. Vanderbilt University, USA
  2. Reliable MicroSystems, LLC, USA

Ion-induced damage leading to increased leakage current and hard failures in gallium nitride transistors are reported. Leakage current paths are identified using failure analysis and TCAD simulations.

PI-2      Estimating SELC and SEB Thresholds in SiC Power Devices Using Standard Benchtop Switching Energy Measurements

D. Ball1, S. Kosier1, K. Galloway1, A. Witulski1, A. Sternberg1, S. Islam1, A. Sengupta1, M. Alles1, J. Hutson2, R. Reed1, J. Osheroff3, R. Schrimpf1

  1. Vanderbilt University, USA
  2. Lipscomb University, USA
  3. NASA Goddard Space Flight Center, USA

Switching energy measurements are used to estimate ion-induced leakage and burnout thresholds in SiC power devices, while the non-linear, ion-induced carrier mobility degradation is shown to explain SELC/SEB threshold trends seen in measured data

PI-3      Impact of Proton Energy on Displacement Damage and Total Ionizing Dose in SiC Vertical Power MOSFETs

C. Martinella1, S. Bonaldo2, M. Belanche1, R. Kupper1, G. Andreetta2, M. Bagatin2, S. Gerardin3, A. Paccagnella2, U. Grossner4

  1. APS Laboratory - ETH Zurich, Switzerland
  2. University of Padova, Italy
  3. DEI - Padova University, Italy
  4. APS - ETH Zurich, Switzerland

DD and TID have been studied in SiC power MOSFETs with 1 and 3 MeV protons. Deep-level transient spectroscopy (DLTS) has been used to investigate the generation of defects in 4H-SiC wafers.

PI-4      Neutron SEE Test Considering Actual EV Operating and Environment for Commercial 1200V SiC MOSFET

M. Jo1

  1. QRT Inc., Korea, Republic of

We performed neutron SEE tests with reflecting conditions driving distance and driving environment for EVs.

CONFERENCE SOCIAL

 

Grand Ballroom 1

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Chair: Giulio Borghello, CERN

 

 

V. Goiffon1, C. Durnez2, A. Antonsanti1, A. Jouni3, V. Lalucaa2, A. Jay4, D. Lambert5, T. Jarrin5, R. Monflier4, N. Richard5, P. Paillet5, C. Virmontois2

  1. ISAE-SUPAERO, France
  2. CNES, France
  3. Sodern, France
  4. LAAS, CNRS, France
  5. CEA, France

The expression of single displacement damage defects induced by 60Co gamma-rays is revealed in silicon microvolumes using a state-of-the-art CMOS pixel array. The creation of gamma induced bulk random telegraph signal is also evidenced.

J. Kauppila1, G. Poe1, T. Haeffner1, J. Laporte1, M. Siath1, S. Vibbert1, C. Moyers1, M. Evans1, D. Vibbert1, C. Conte1, A. Vidana2, N. Dodds2, N. Nowlin2, P. Oldiges2, K. Sapkota2, J. Joffrion2, T. Wallace3, H. Barnaby3, L. Massengill1

  1. Reliable MicroSystems, LLC, USA
  2. Sandia National Laboratories, USA
  3. Arizona State University, USA

Experiments on three highly-scaled technologies show that 10-keV X-rays cause far more TID degradation than 1-MeV gammas, even when irradiating to the same dose. The underlying mechanism is being identified to inform hardness assurance guidelines.

G. Casagranda1, C. Cazzaniga2, M. Kastriotou2, C. Frost3, F. Vella1, P. Rech1

  1. University of Trento, Italy
  2. STFC, United Kingdom
  3. ISIS Neutron and Muon Facility, United Kingdom

We present data from 14MeV and atmospheric-like neutron experiments on a SQUID. We characterize the radiation impact on the quantum device and find that neutrons and background gammas can generate peak or burst I-V perturbations.

Broadway Ballroom

Chair: Ashok Raman, CFDRC

 

L. Tongde1, Z. Yuanfu2, Z. Yong-qin1, Y. Jing-shuang1, Y. Chun-qing1, W. Liang1

  1. Beijing Microelectronics Technology Institute, China
  2. China Academy of Aerospace Electronics Technology, China

SE-Hardening efficiency by using stacked devices is reduced due to process-dependent CnRX structure with virtual transistors at nodes protected by stacked structure. An insertion structure is designed to decouple connection relationships and achieve full hardening.

G. Mayberry1, J. Trippe1, D. Ball1, R. Reed1, D. Fleetwood1, R. Schrimpf1, S. Pantelides1

  1. Vanderbilt University, USA

A two-stage, atomic-scale molecular-dynamics framework is employed to describe vacancy-count distributions for single-event displacement damage (SEDD) in advanced CMOS. Broad distribution variances, corroborated by experimental data, suggest a role in future hardness assurance against SEDD.

D. Hansen1, B. Kimbrell1, T. Manich1, C. Pownell1, I. Zavatkay1

  1. L3 Harris, USA

This paper takes a design of experiments approach to rate calculations using different expressions for the cross-section, flux, and transport operator. The best methods are identified based on comparison to on-orbit data.

Chair: Matt Von Thun, Frontgrade Technologies

 Lunch - On Your Own

Gamma Ray Induced Displacement Damage in Silicon Microvolumes: Single Defect Generation Rate and Random Telegraph Signal

V. Goiffon1, C. Durnez2, A. Antonsanti1, A. Jouni3, V. Lalucaa2, A. Jay4, D. Lambert5, T. Jarrin5, R. Monflier4, N. Richard5, P. Paillet5, C. Virmontois2

  1. ISAE-SUPAERO, France
  2. CNES, France
  3. Sodern, France
  4. LAAS, CNRS, France
  5. CEA, France

The expression of single displacement damage defects induced by 60Co gamma-rays is revealed in silicon microvolumes using a state-of-the-art CMOS pixel array. The creation of gamma induced bulk random telegraph signal is also evidenced.

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Chair: Paula Chen, AMD, Inc.

 

G. Adom-bamfi1, S. Biereigel2, E. Tackx1, P. Leroux1, J. Prinzie1

  1. KU Leuven, Belgium
  2. CERN, Switzerland

This work investigates RHBD techniques to mitigate SEFT in CMOS oscillators caused by single-event sensitivity in on-chip inductors. Heavy-ion microbeam tests on DCO circuits show that incorporating N+ islands and N-well layers reduces SEFT sensitivity.

C. Elash1, Z. Li1, J. Xing1, P. Pour momen1, D. Ramaswami1, D. Lambert1, J. Cardenas1, R. Fung2, S. Wen2, G. Martin3, L. Chen1

  1. University of Saskatchewan, Canada
  2. Cisco, USA
  3. QuickLogic Corporation, USA

A 32-bit RISC-V microcontroller is designed and fabricated at a 22-nm FDSOI node using Radiation Hardening by Design Techniques. Testing of the device shows remarkable tolerance to single event effects from protons and heavy ions.

Chair: Françoise Bezerra, CNES

K. Niskanen1, A. Javanainen1, C. Martinella2, A. Witulski3, H. Kettunen1

  1. University of Jyväskylä, Finland
  2. APS Laboratory - ETH Zurich, Switzerland
  3. Vanderbilt University, USA

The effect of temperature on the heavy ion response of SiC power MOSFETs was investigated. The single event burnout (SEB) threshold increased and the ion-induced leakage current decreased with increasing temperature.

A. Sengupta1, D. Ball1, S. Islam1, A. Senarath1, A. Witulski1, R. Schrimpf1, K. Galloway1, E. Zhang1, M. Alles1, R. Reed1, M. Mccurdy1, J. Osheroff2, B. Jacob3, C. Hitchcock3, S. Goswami3, J. Hutson4

1. Vanderbilt University, USA

2. NASA Goddard Space Flight Center, USA

3. General Electric Global Research, USA

4. Lipscomb University, USA

Heavy-ion single-event burnout and leakage behavior of 1.2 kV and 3.3 kV silicon carbide power devices are analyzed based on radiation tests. The voltage capability of these devices affects the burnout and leakage thresholds differently.

A. Khachatrian1, A. Koehler1, S. Buchner2, J. Hales2, D. Mcmorrow1

  1. U.S. Naval Research Laboratory, USA
  2. Jacobs, Inc., USA

Single-event effects in GaN devices are studied using ultrafast laser pulses. Defects in the GaN material lead to an increased sensitivity to SEB, suggesting that the pulsed laser can be used to screen devices.

H. Couillaud1, M. Gaillardin1, L. Artola2, G. Hubert2

  1. CEA, DAM, CEA-Gramat, France
  2. ONERA/DPHY, France

TID effects are studied for two commercial GaN Cascode power technologies. TID triggers unexpected parasitic transistors which are investigated using both experiments and TCAD simulations.

H. Lee1

  1. QRT Inc, Korea, Republic of

The failure phenomenon in a wide area was analyzed, and this was explained with physical analysis and TCAD based proposed trap-assist tunneling current model for SEB during irradiation in SiC power diode.

Pre-Function

Z. Brumbach1, D. Nergui1, J. Teng1, Y. Mensah1, D. Sam1, A. Ildefonso2, A. Khachatrian2, D. Mcmorrow2, J. Cressler1

1. Georgia Institute of Technology, USA

2. U.S. Naval Research Laboratory, USA

SET responses of high-speed and high-breakdown SiGe HBT variants in the same technology platform were compared using laser pulses. The lower-performance, high-breakdown SiGe HBT showed a larger transient response, which is investigated using TCAD.

D. Nergui1, J. Teng1, Z. Brumbach1, A. Ildefonso2, A. Khachatrian2, D. Mcmorrow2, J. Cressler1

1. Georgia Institute of Technology, USA

2. U.S. Naval Research Laboratory, USA

Standard digital modulation schemes are compared for receiver-level SEU sensitivity using pulsed laser. Frequency shift keying demonstrated a better SEU resilience than phase shift keying despite having a worse baseline (no SET) noise performance.

J. Teng1, Y. Mensah1, Z. Brumbach1, A. Ildefonso2, A. Khachatrian2, D. Mcmorrow2, J. Cressler1

1. Georgia Institute of Technology, USA

2. U.S. Naval Research Laboratory, USA

SET responses of cross-coupled and Colpitts LC oscillators are compared using laser-induced TPA and circuit simulations. The Colpitts oscillator demonstrated smaller amplitude disturbances and faster recovery time following SET-induced drop-out.

Y. Xiong1, N. Pieper1, Y. Qian1, S. Wodzro1, B. Narasimham2, R. Fung3, S. Wen3, B. Bhuva1

1. Vanderbilt University, USA

2. Broadcom, USA

3. Cisco Systems Inc., USA

Single-event upset cross-section trends for high frequency operation of RHBD FF designs are evaluated at the 5-nm bulk FinFET node. Results show reduced RHBD efficacy at the GHz range of frequencies.

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Technical/Exhibit

Sunday-Friday

On-Site Registration – Van Horn A

Pre-Registration (Sun/Mon Only) – The Terrace

Monday

A/V Preview Room – Benton

Side Meeting Rooms – Empire A, B, C

Monday

Short Course Sessions & Exam – Exhibit Hall B

Tuesday – Friday

Technical Sessions – Exhibit Hall B

Tuesday – Wednesday

Exhibits – Exhibit Hall A

Wednesday

Poster Session – Chicago

Thursday

REDW Session – New York

Open Meeting – Exhibit Hall B

Dining/Social

Sunday

Welcome Reception – The Terrace

Monday

Breakfast – The Terrace, Atlanta

Morning Break – Prefunction

Short Course Luncheon – The Terrace, Atlanta

Afternoon Break – Prefunction

Tuesday

Breakfast, Morning Break – Exhibit Hall A

Exhibitor Lunch – Exhibit Hall A

Afternoon Break – Exhibit Hall A

Exhibit Reception – Exhibit Hall A

Wednesday

Breakfast, Morning Break – Exhibit Hall A

Exhibitor Lunch & Raffle – Exhibit Hall A

Young Professionals Lunch* – Chouteau

Afternoon Break – Prefunction

Thursday

Breakfast – The Terrace, Atlanta

Women in Engineering Lunch* – Chouteau

Morning Break – Prefunction

Afternoon Break – Prefunction

Friday

Breakfast – The Terrace, Atlanta

Morning Break – Prefunction

 

*Ticket required for this event