Technical Program 2025 – Session F

2025 IEEE NSREC TECHNICAL PROGRAM

SESSION F SCHEDULE

NASHVILLE RENAISSANCE HOTEL, NASHVILLE, TN

THURSDAY, JULY 17, 2025

SESSION F

Grand Ballroom 2-3

BASIC MECHANISMS OF RADIATION EFFECTS

9:30 AM

SESSION INTRODUCTION

Chair: Giulio Borghello, CERN

F-1

9:35 AM

Gamma Ray Induced Displacement Damage in Silicon Microvolumes: Single Defect Generation Rate and Random Telegraph Signal

V. Goiffon1, C. Durnez2, A. Antonsanti1, A. Jouni3, V. Lalucaa2, A. Jay4, D. Lambert5, T. Jarrin5, R. Monflier4, N. Richard5, P. Paillet5, C. Virmontois2

  1. ISAE-SUPAERO, France
  2. CNES, France
  3. Sodern, France
  4. LAAS, CNRS, France
  5. CEA, France

The expression of single displacement damage defects induced by 60Co gamma-rays is revealed in silicon microvolumes using a state-of-the-art CMOS pixel array. The creation of gamma induced bulk random telegraph signal is also evidenced.

F-2

9:50 AM

Differences in TID Response when Irradiating Highly-Scaled MOSFETs with 10 keV X-rays versus 1 MeV Gammas

J. Kauppila1, G. Poe1, T. Haeffner1, J. Laporte1, M. Siath1, S. Vibbert1, C. Moyers1, M. Evans1, D. Vibbert1, C. Conte1, A. Vidana2, N. Dodds2, N. Nowlin2, P. Oldiges2, K. Sapkota2, J. Joffrion2, T. Wallace3, H. Barnaby3, L. Massengill1

  1. Reliable MicroSystems, LLC, USA
  2. Sandia National Laboratories, USA
  3. Arizona State University, USA

Experiments on three highly-scaled technologies show that 10-keV X-rays cause far more TID degradation than 1-MeV gammas, even when irradiating to the same dose. The underlying mechanism is being identified to inform hardness assurance guidelines.

F-3

10:05 AM

SQUID GAME: Gamma, Atmospheric, and Mono-Energetic neutron effects on a quantum device

G. Casagranda1, C. Cazzaniga2, M. Kastriotou2, C. Frost3, F. Vella1, P. Rech1

  1. University of Trento, Italy
  2. STFC, United Kingdom
  3. ISIS Neutron and Muon Facility, United Kingdom

We present data from 14MeV and atmospheric-like neutron experiments on a SQUID. We characterize the radiation impact on the quantum device and find that neutrons and background gammas can generate peak or burst I-V perturbations.

2025 IEEE NSREC POSTER SESSION F

NASHVILLE RENAISSANCE HOTEL, NASHVILLE, TN

WEDNESDAY, JULY 16, 2025

2:50 PM – 4:50 PM

Germantown 1-3

PG-1    Impact of Hot-Carrier Diffusivity on Single-Event Upsets in Highly Scaled FinFETs

J. Vielmette1, D. Ball1, J. Trippe1, G. Walker1, M. Fischetti2, D. Nielsen2, M. Alles1, K. Nagamatsu3, R. Schrimpf1

  1. Vanderbilt University, USA
  2. University of Texas at Dallas, USA
  3. Northrop Grumman Systems Corporation, USA

Sensitivity of charge collection in scaled finFET devices to the assumed thermalization rate of radiation-induced hot carriers is demonstrated. Full-band Monte Carlo simulations validate current approaches to simulating single-event effects using drift-diffusion tools

PG-2    Evaluation of Single-Event Effects on Sub-20nm FinFET based AI Chips

F. Shuanglin1, L. Bin1, W. Xun1, C. Yaqing1, C. Jianjun1, L. Deng1, Y. Guofang1

  1. College of Computer Science and Technology, National University of Defense Technology, China

Through results of heavy-ion and laser pulse testing, the Single-Event Effect (SEE) performance of neural network algorithms on sub-20nm AI chips was summarized, and the characteristics of SEE were revealed.