Grand Ballroom 2-3

Grand Ballroom 2-3

Grand Ballroom 1

 

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Broadway Ballroom

Chair: Enxia Zhang, University of Central Florida

PA-1    The Research on 22 nm UTBB-FDSOI SRAM MCUs with Staggered Well under Back-Bias of 0 V

L. Tongde¹, Z. Yuanfu², Z. Yong-qin¹, Y. Jing-shuang¹, A. Paccagnella³, W. Liang¹

1. Beijing Microelectronics Technology Institute, China
2. China Academy of Aerospace Electronics Technology, China
3. University of Padua, Italy

This paper investigated the MCU characteristics of nano-scale FDSOI SRAM under different incident directions and angles. According to the experimental and numerical simulation results, the charge collection mechanisms were discussed.

 

PA-2    Neutron-induced Single Event Effects in 3D Managed NAND Memories

D. Peyronel¹, G. Lama¹, M. Valla¹, M. Kastriotou², C. Cazzaniga², M. Bagatin³, S. Gerardin⁴

1. Micron Semiconductor Italia Srl, Italy
2. STFC, United Kingdom
3. University of Padova, Italy
4. DEI - Padova University, Italy

The sensitivity of 3D managed NAND Flash memories to atmospheric spectrum neutrons has been investigated, with a focus on the functional elements that lead to single event functional interrupts and user data corruption.

PA-3    Versal ACAP AI Engine Heavy Ion Testing with Spill Synchronization

Price¹, G. Smith¹, M. Wirthlin¹

1. Brigham Young University, USA

This work presents the heavy ion of the AI/ML engines within the Versal Core and Edge series devices. This approach tests the hundreds of AI engines within these devices simultaneously and synchronously with beam spills.

PA-4    The Effect of Heavy Ions on Inference Accuracy on the IBM NorthPole

F. Viramontes¹, V. Vergara², A. Romero¹, M. Spear³, W. Slater³, H. Quinn³

1. UNM COSMIAC, USA
2. Blue Halo, USA
3. Air Force Research Laboratory, USA

This abstract covers a heavy-ion test that was recently performed on the IBM NorthPole. SEFI and SEU cross sections of the device are discussed, as well as the effect of heavy-ions on AI/ML inference accuracy.

PA-5    Input and Clock State Dependence of D-FF SEU Vulnerability at 3-nm Bulk FinFET Node

J. Kronenberg¹, N. Pieper¹, Y. Xiong¹, D. Ball¹, B. Bhuva¹

1. Vanderbilt University, USA

SERs for D-FFs in a 3-nm technology show differences based on stored data, indicating state-dependent Qcrit values. Simulations show differences in charge collection by n- & p-hits, and design asymmetry are primary factors determining state-dependent SERs.

PA-6    Charge Generation Correlation in Silicon PN Diodes for Heavy Ions vs. Two-Photon Absorption

R. Rodriguez-Davila¹, A. Carillo-Osuna¹, T. Moise¹, B. Gnade¹, R. Baumann¹, M. Quevedo-Lopez¹

1. The University of Texas at Dallas, USA

Bessel-focusing two-photon absorption (TPA) in silicon diodes accurately simulates the effects of heavy ion radiation, offering a cheaper and more accessible alternative for evaluating single event effects in semiconductor devices.

PB-1    Novel Statistical Method for Quantifying the Uncertainty on the Measurement of Single Event Effects

N. Rostand¹, A. Losquin¹, T. Jarrin¹, O. Duhamel¹, J. Rebourg¹

1. CEA, France

We develop a novel statistical method providing guarantee on the uncertainty on the number of Single Event Effects measured during experiments. Comparison with the literature is exposed through SEU/SET experimental data on elementary electronic cells.

PB-2    Bounding SEL Rates for Null Results and Other Limited Test Data

R. Ladbury¹, M. Joplin¹, J. Lauenstein¹

1. NASA Goddard Space Flight Center, USA

We exploit trends observed in historical archives of SEL test data to develop methods for bounding SEL rates based on null heavy-ion test results and other minimally constraining test data.

PB-3    Principles for Selecting Pulsed-Laser Operating Parameters to Predict Heavy-Ion SEE Response

A. Ildefonso¹, J. Hales², D. Mcmorrow²

1. Indiana University Bloomington, USA
2. U.S. Naval Research Laboratory, USA

This work establishes quantitative principles for determining when a pulsed-laser test configuration can predict ion-induced single-event effects. Validated experimentally, these principles provide a systematic framework for assessing the ability of any surrogate test approach to be predictive.

PB-4    Error Pattern Analysis of Commercial Ferroelectric RAM under Total Ionizing Dose Effects

M. Ahmed¹, J. Bell¹, A. Brandl¹, B. Ray¹

1. Colorado State University, USA

Commercial FeRAM exhibits data corruption from 50 krad(Si), with an overall error rate (~0.01%) at 500 krad(Si). Errors are asymmetric, with stored ones experiencing significantly more bit-flips than stored zeros.

 

PC-1    Total ionizing dose effects on a PbS-QD-based CMOS direct-conversion X-ray image sensor

C. Zhang¹, V. Goossens², A. Neyret³, R. Quaglia¹, V. Goiffon³, A. Shulga², P. Rüedi¹

1. CSEM SA, Switzerland
2. QDI Systems, Netherlands
3. ISAE-SUPAERO, France

This work presents the first observation of ionizing radiation effects on the first PbS-QD-coated CMOS X-ray image sensor from the evolution of dark current, X-ray sensitivity, spatial resolution, and X-ray imaging capability under X-ray irradiation.

PC-2    Dark Current and Random Telegraph Signal Degradation Induced by Proton Radiation in a Long-Wave HgCdTe Infrared Sensor

T. Friess¹, E. De Borniol², A. Antonsanti³, N. Baier², A. Rouvie⁴, A. Le Roch⁴, V. Goiffon³, S. Rizzolo⁵, O. Gravrand²

1. CNES / CEA Leti / ISAE Supaero / Airbus DS, France
2. CEA Leti, France
3. ISAE-SUPAERO, France
4. CNES, France
5. Airbus Defence and Space S.A.S., France

Dark current and Random Telegraph Signal degradations were analyzed in an HgCdTe Long-Wave InfraRed (LWIR) sensor after proton irradiation. The evolution of those mechanisms was evaluated after different annealing temperatures.

PC-3    Bias and Geometry Dependent Ionization Effects on Waveguide-Integrated Germanium-Silicon Vertical p-i-n Photodiodes

A. Veluri¹, K. Arnold¹, S. Musibau², A. Tsiara², K. Croes², D. Linten², J. Vancampenhout², S. Kosier¹, R. Schrimpf¹, D. Fleetwood¹, R. Reed¹, S. Weiss¹

1. Vanderbilt University, USA
2. imec, Belgium

We investigated ionization effects on Ge-Si VPIN photodiodes under 10-keV X-ray irradiation. Localized P+ doping shows 75% higher dark current sensitivity, while smaller Ge width shows stronger bias-dependent increase. Fast room-temperature recovery confirms space-based viability.

PC-4    Fundamental Mechanisms of Total-Ionizing-Dose Response in Waveguide-Coupled Ge-on-Si PIN Photodiodes

S. Musibau¹, K. Arnold², A. Veluri², A. Tsiara³, J. Franco³, K. Croes³, D. Linten³, J. Van campenhout³, S. Weiss², R. Schrimpf², D. Fleetwood², S. Kosier², I. De wolf¹, R. Reed²

1. imec and KU Leuven, Belgium
2. Vanderbilt University, USA
3. imec, Belgium

Calibrated TCAD simulations of total-ionizing-dose effects in vertical Ge-on-Si photodiodes reveal dominant charge trapping at top-corner Ge/SiO2 interfaces, enhancing local electric fields, Shockley-Read-Hall generation/recombination rates and trap-assisted tunneling currents.

PC-5    Radiation Reliability of the White LEDs of the MMX mission on Phobos

L. Weninger¹, G. Ciachera¹, M. Darnon¹, A. Morana¹, F. Fricano¹, V. Lalucaa², J. Belloir², C. Durnez², C. Virmontois², N. Kerboub², J. Mekki², Y. Morilla³, P. Martin Holgado³, A. Romero Maestre³, M. Gaillardin⁴, O. Duhamel⁴, P. Paillet⁴, S. Girard⁵

1. Laboratoire Hubert Curien - UJM, France
2. CNES, France
3. Centro Nacional de Aceleradores (CNA), Spain
4. CEA, France
5. Université de Saint Etienne, France

This work presents the results on the external quantum efficiency degradation under various ionizing radiations of the white LEDs selected for the illumination system of the cameras of the MMX mission rover on Phobos.

PC-6L   Photonics in Space: Single-Event Radiation Effects on Silicon Photonic Digital Optical Receiver

Hoff¹, K. Arnold², A. Sternberg², J. Slaby³, R. Stevens¹, S. Weiss², R. Reed², Ralph³

1. Lockheed Martin Advanced Technology Labs, USA
2. Vanderbilt University, USA
3. Georgia Institute of Technology, USA

This paper investigates the radiation tolerance of digital optical links, focusing on the receiver performance in the presence of pulsed-laser-induced single-event transients. Device measurements are presented, together with in-situ measurements of the bit error ratio.

PD-1    TID-Induced Degradation in 3-nm FinFET SRAM Cell Retention

N. Pieper¹, J. Kronenberg¹, Y. Xiong¹, J. Pasternak², D. Ball¹, B. Bhuva¹

1. Vanderbilt University, USA
2. Synopsys, Inc., USA

TID-induced degradation in SRAM cell stability is measured in a commercial 3-nm bulk FinFET node. TID-induced increases in data retention voltages for 3-nm cells are observed to be greater than that for 5-nm SRAM cells.

PD-2    Evidence for Single-Particle Displacement Damage in 14-nm FinFET SRAMs

Y. Xiong¹, J. Kronenberg¹, J. Xiong², J. D’amico², A. Vidana², N. Pieper¹, G. Vizkelethy², N. Dodds², N. Nowlin², B. Bhuva¹

1. Vanderbilt University, USA
2. Sandia National Laboratories, USA

Experiments on 14-nm FinFET SRAMs reveal that single-ion-induced displacement damage causes stuck memory bits in 1-fin bitcell designs, but not in 2-fin bitcell designs. Failure mechanisms are identified and discussed using experimental results and simulations.

PD-3    Strategic Input Selection For Deep Neural Networks Reliability Evaluation

L. Roquet¹, F. Fernandes dos Santos¹, M. Kastriotou², A. Kritikakou¹

1. IRISA/Inria Rennes, France
2. ISIS Neutron and Muon Source, United Kingdom

We present a robust methodology for selecting inputs for DNNs in radiation experiments. Using our approach, we obtained a 12.19× higher DNN misclassification rate on average compared to the commonly used random input selection.

PD-4    Degradation of Charge Transport in Irradiated FDSOI Devices at Cryogenic Temperatures

F. Mamun¹, M. Spear², J. Solano³, J. Neuendank¹, M. Turowski⁴, H. Barnaby¹, I. Esqueda¹

1. Arizona State University, USA
2. Airforce Research Lab, USA
3. MOOG Space and Defense, USA
4. Alphacore Inc, USA

This work establishes the impact of radiation on the transport properties of FDSOI devices at cryogenic temperatures. A quasi-ballistic transport model reveals bias-dependent degradation in mobility attributed to charge buildup in the buried oxide.

PD-5    To Explore the Future of Quantum ICs for Space applications: A Study on Cryogenic Behavior of X-ray Irradiated 22nm FD-SOI MOSFETs

J. Zhao¹, Y. Qing¹, Z. Li², M. Gorbunov², Q. Ma¹, L. Marien¹, M. Zhang¹, T. Maraine³, F. Saigné³, J. Prinzie¹, P. Leroux¹

1. KU Leuven, Belgium
2. IMEC, Belgium
3. Université de Montpellier, France

This study explores 22-nm FD-SOI MOSFETs under X-ray irradiation at 20 K. NMOSFETs recover, but PFETs show increased Vth. A transimpedance amplifier analysis highlights radiation challenges for quantum ICs in space applications.

PD-6    Investigation of the Degradation Mechanism of LDMOS Under Electromagnetic Pulse

S. Guan¹, Y. Wu², L. Shu², F. Liu², H. Zhang¹, X. Wei¹

1. Beijing University of Posts and Telecommunications, China
2. Institute of Microelectronics of China Academy of Sciences, China

This work investigates Electromagnetic Pulse(EMP) damage mechanisms in LDMOS transistors for varying conditions. Neural networks and electromagnetic leakage signal have been used to achieve damage classification of LDMOS with EMP.

PD-7    Ionizing Dose Effects on DNA Data Storage Nanoplatforms

L. Sala¹, K. Cardos¹, V. Olšanský², D. Chvátil², F. Chevalier³, V. Vizcaino³, A. Méry³, J. Kočišek¹

1. J. Heyrovsky Institute of Physical Chemistry of the CAS, Czech Republic
2. Nuclear Physics Institute of the CAS, Czech Republic
3. Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, France

DNA origami nanoplatforms for data storage were exposed to ionizing radiation to identify structural vulnerabilities. This analysis contributes to optimizing these nanoplatforms and advancing methods to enhance data integrity and long-term preservation.

PD-8L A Comparative Study of Single-Bit Upset Cross Sections Between Single-Photon Absorption Laser and Heavy Ion Testing

Toguchi¹, N. Rezzak¹, J. McCollum¹

1. Microchip Technology Inc., USA

This study compares SBU XS from SPA laser and heavy-ion tests for 28 nm Planar and 12 nm FinFET SRAMs, finding good agreement at high LET and underestimation at low LET.

PE-1     Space Weather Launch Commit Criteria Study for Heavy Ion Susceptible Avionics

A. Destefano¹, J. Martin²

1. NASA, USA
2. Amentum, USA

In this work, we study the effectiveness of a space weather launch commit criteria based on proton fluxes on mitigating risk due to avionics that are susceptible to heavy ions.

PE-2     Comparison of Active and Passive Adjustment of the Entrance Energy of Synchrotron Ions for Single Event Effect Testing

M. Eizinger¹, W. Treberer-treberspurg², P. Schieder², A. Hirtl³, B. Seifert¹

1. Fotec Forschungs- und Technologietransfer GmbH, Austria
2. University of Applied Sciences Wiener Neustadt, Austria
3. Atominstitut, TU Wien, Austria

We compare two methods for varying the Bragg peak depth of carbon ions in silicon. Inserting passive degraders achieves finer resolution compared to variation of the initial energy, at the cost of stronger parasitic effects.

PE-3     Quenching Corrections for Proton-Irradiated Scintillators Using Geant4 Simulations of LET

E. Auden¹, J. George¹, A. Hoover¹, C. Delzer¹, G. Riley¹, F. Liang¹, T. Espinoza¹

1. Los Alamos National Laboratory, USA

Proton quenching effects in scintillators reduce light output similar to charge collection effects for high density particle tracks in silicon devices. We compare experimental and Monte Carlo quenching results in YSO and discuss quenching parameterization.

PE-4     Radiation Detection Based on Transient Non-equilibrium Body Potential under SOI-SBFETs Configuration

T. Zhang¹, F. Liu¹, L. Shu¹, S. Chen¹, Y. Huang¹, Y. Wu¹, J. Wan², Y. Xu³, Y. Ding⁴, B. Li¹, Z. Han¹, T. Ye¹

1. The Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China, China
2. School of Microelectronics, Fudan University, China
3. School of Microelectronics, Nanjing University of Posts and Telecommunications, China
4. China Institute of Atomic Energy, China

A new transient method has been adapted to detect γ-ray. This method relies on non-equilibrium body potential, which shows advantages in fast testing, low process cost, and simple data processing.

PE-5     A Method for Low-Cost Cold Total Ionizing Dose Dosimetry and Irradiation

S. Katz¹

1. Johns Hopkins University Applied Physics Laboratory, USA

Irradiating samples on dry ice in an insulated box reduces the complexity, expense of, and space required for cold radiation testing of electronics. Polyethylene simulant allows dosimetry at room temperature prior to irradiation.

PE-6L    Effect of Partial Volume Irradiation in p-i-n Sensors for NIEL Monitoring

Bennett¹, V. Pan¹, J. Vohadsky¹, L. Tran¹, Z. Pastuovic², S. Peracchi², R. Drury², A. Perevertaylo³, I. Anokhin⁴, A. Rosenfeld¹

1. University of Wollongong, Australia
2. Australian Nuclear Science and Technology Organisation, Australia
3. SPA-BIT, Ukraine
4. Institute for Nuclear Research, Kyiv, Ukraine

We demonstrated the effect of partial volume irradiation on long base p-i-n diodes response in terms of DDD monitoring and possible error in DDD determination associated with this effect.

PF-1     TID Degradation Mechanisms in Gate-All-Around Silicon Nanowire FETs

C. Champagne¹, D. Ball¹, J. Trippe¹, R. Ritzenthaler², J. Mitard², D. Linten², L. Massengill¹, S. Kosier¹, R. Reed¹, E. Zhang³, M. Alles¹, S. Bonaldo⁴, D. Fleetwood¹, B. Sierawski¹

1. Vanderbilt University, USA
2. imec, Belgium
3. University of Central Florida, USA
4. University of Padova, Italy

TCAD analysis of the contributions of gate and spacer oxides to the measured TID response of nanowire FETs indicates that the gate oxide is a significant degradation driver. Results are com-pared with previous technology nodes.

PF-2     An Implicit Radiation-Aware Surface Potential Model for FDSOI CMOS Technologies

I. Livingston¹, I. Esqueda¹, H. Barnaby¹, M. Spear¹, J. Solano¹, T. Wallace¹

1. Arizona State University, USA

An implicit defect-based surface potential model is presented for fully-depleted silicon-on-insulator MOSFETs. The accuracy of this model is compared to experimental data on devices from a commercial 22nm FDSOI process after total ionizing dose exposure.

PF-3L    Total-Ionizing-Dose Effects and Low-Frequency Noise in 90 nm Bulk CMOS Devices

Neuendank¹, T. Kirby¹, H. Barnaby¹, D. Fleetwood², S. Bonaldo³, D. Loveless⁴, S. Westfall⁴, P. Muscat¹, M. Nour⁵, M. Chambers⁵

1. Arizona State University, USA
2. Vanderbilt University, USA
3. University of Padova, Italy
4. Indiana University, USA
5. Skywater Technology, USA

The impact of 60Co gamma rays on the total ionizing dose DC response and random telegraph noise in bulk MOSFETs at 300 Kelvin is reported. Results show behavior is consistent with radiation-induced switching border/interface traps.

PF-4L    Si Thinning as a Hardening Technique Against SEU for 28-nm Bulk CMOS 6T SRAMs

Yazigi-Richoux¹, H. Barnaby¹, P. Kerber², C. Saltonstall², L. Andrus², M. Marinella¹, J. Neuendank¹

1. School of Electrical, Computer and Energy Engineering, Arizona State University, USA
2. Sandia National Laboratories, USA

This work investigates how Si substrate thinning affects SEU sensitivity for 28nm process 6T SRAM cells. Both laser raster-scan data and TCAD simulation results are in qualitative agreement that thinning decreases the LET upset threshold.

PG-1    Impact of Hot-Carrier Diffusivity on Single-Event Upsets in Highly Scaled FinFETs

J. Vielmette¹, D. Ball¹, J. Trippe¹, G. Walker¹, M. Fischetti², D. Nielsen², M. Alles¹, K. Nagamatsu³, R. Schrimpf¹

1. Vanderbilt University, USA
2. University of Texas at Dallas, USA
3. Northrop Grumman Systems Corporation, USA

Sensitivity of charge collection in scaled finFET devices to the assumed thermalization rate of radiation-induced hot carriers is demonstrated. Full-band Monte Carlo simulations validate current approaches to simulating single-event effects using drift-diffusion tools

PG-2    Evaluation of Single-Event Effects on Sub-20nm FinFET based AI Chips

F. Shuanglin¹, L. Bin¹, W. Xun¹, C. Yaqing¹, C. Jianjun¹, L. Deng¹, Y. Guofang¹

1. College of Computer Science and Technology, National University of Defense Technology, China

Through results of heavy-ion and laser pulse testing, the Single-Event Effect (SEE) performance of neural network algorithms on sub-20nm AI chips was summarized, and the characteristics of SEE were revealed.

PH-1    System-Level SEU Hardening of Wireless Receivers through Modulation Scheme Selection

J. Shin¹, J. Teng², Z. Brumbach¹, B. Ringel¹, D. Sam¹, A. Ildefonso³, T. Crane⁴, A. Khachatrian⁵, D. Mcmorrow⁵, J. Cressler¹

1. Georgia Institute of Technology, USA
2. The Aerospace Corporation, USA
3. Indiana University Bloomington, USA
4. Jacobs, Inc., USA
5. US Naval Research Laboratory, USA

Pulsed-laser SEE testing is utilized to evaluate SEU-hardening of a SiGe wireless receiver through modulation scheme selection. Results demonstrate that intentionally selecting modulation schemes based on known component sensitivity can reduce system-level SEU rates.

PH-2    Total Dose Hardening Using a Sensitive Circuit Identification Methodology in a DC-DC Converter

M. Murillo¹, R. Milner², B. Dean¹, J. D’amico¹, T. Tengberg², A. Witulski¹, M. Alles¹, S. Kosier¹, J. Trippe¹, T. Holman¹, D. Ball¹, M. Hu¹, A. Fayed², L. Massengill¹

1. Vanderbilt University, USA
2. The Ohio State University, USA

Data-calibrated models of TID effects were used to simulate radiation effects in a DF-SIMO buck converter. Through this, a method of “sensitive circuit” identification was developed to efficiently simulate TID effects mitigation.

PH-3    Optimized Dynamic Back-Biasing Strategy to Improve TID Tolerance in Conventional-Well 22nm FDSOI Transistors

B. Dean¹, M. Hu¹, T. Haeffner², J. Kauppila², M. Alles¹, J. Trippe¹, D. Ball¹, B. Sierawski¹, T. Holman¹, S. Kosier¹, L. Massengill¹

1. Vanderbilt University, USA
2. Reliable MicroSystems, USA

An optimizable back-biasing strategy for TID mitigation is presented based on 22nm FDSOI transistor data obtained with in situ back-bias variation, resulting in a calculated maximum survivable dose increase of over 35%.

PI-1      Single Ion-Induced Damage in Gallium Nitride High Electron Mobility Transistors

J. Gray¹, A. Sternberg¹, J. Kauppila², D. Ball¹, J. Trippe¹, S. Kosier¹, A. Witulski¹, M. Alles¹, J. Davidson¹, R. Schrimpf¹, L. Massengill¹

1. Vanderbilt University, USA
2. Reliable MicroSystems, LLC, USA

Ion-induced damage leading to increased leakage current and hard failures in gallium nitride transistors are reported. Leakage current paths are identified using failure analysis and TCAD simulations.

PI-2      Estimating SELC and SEB Thresholds in SiC Power Devices Using Standard Benchtop Switching Energy Measurements

D. Ball¹, S. Kosier¹, K. Galloway¹, A. Witulski¹, A. Sternberg¹, S. Islam¹, A. Sengupta¹, M. Alles¹, J. Hutson², R. Reed¹, J. Osheroff³, R. Schrimpf¹

1. Vanderbilt University, USA
2. Lipscomb University, USA
3. NASA Goddard Space Flight Center, USA

Switching energy measurements are used to estimate ion-induced leakage and burnout thresholds in SiC power devices, while the non-linear, ion-induced carrier mobility degradation is shown to explain SELC/SEB threshold trends seen in measured data

PI-3      Impact of Proton Energy on Displacement Damage and Total Ionizing Dose in SiC Vertical Power MOSFETs

C. Martinella¹, S. Bonaldo², M. Belanche¹, R. Kupper¹, G. Andreetta², M. Bagatin², S. Gerardin³, A. Paccagnella², U. Grossner⁴

1. APS Laboratory - ETH Zurich, Switzerland
2. University of Padova, Italy
3. DEI - Padova University, Italy
4. APS - ETH Zurich, Switzerland

DD and TID have been studied in SiC power MOSFETs with 1 and 3 MeV protons. Deep-level transient spectroscopy (DLTS) has been used to investigate the generation of defects in 4H-SiC wafers.

PI-4      Neutron SEE Test Considering Actual EV Operating and Environment for Commercial 1200V SiC MOSFET

M. Jo¹

1. QRT Inc., Korea, Republic of

We performed neutron SEE tests with reflecting conditions driving distance and driving environment for EVs.

PI-5L      Influence of Ion LET and Epitaxial Thickness on Single-Event Effects in Homojunction GaN Vertical Diodes

Senarath¹, S. Islam¹, A. Sengupta¹, O. Meilander¹, J. Osheroff², T. Anderson³, A. Jacob⁴, R. Kaplar⁵, S. Kosier¹, M. Ebrish¹, D. Fleetwood¹, J. Caldwell¹, R. Schrimpf¹

1. Vanderbilt University, USA
2. NASA Goddard Space Flight Center, USA
3. University of Florida, USA
4. U.S. Naval Research Laboratory, USA
5. Sandia National Laboratories, USA

Higher-LET ions and thinner epitaxial layers lead to lower SEB thresholds in homojunction GaN PIN diodes. Higher-LET ions enhance degradation through a positive feedback loop mechanism involving Joule heating and nitrogen vacancy formation.

CONFERENCE SOCIAL

 

Grand Ballroom 1

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Broadway Ballroom

Chair: Ashok Raman, CFDRC

 

Chair: Matt Von Thun, Frontgrade Technologies

DW-1	The Aerospace Corporation’s Compendium of Recent Radiation Testing Results S. Davis1, R. Koga1, K. Lee1, J. Taggart1, G. Tzintzarov1, A. Wright1 1. The Aerospace Corporation, USA Radiation testing was performed on several commercial components to determine the response of these components to the space radiation environment. Testing was mostly focused on SEE from protons and heavy ions.
DW-2	CHALICE: Calculator for Highly Accurate Laser-Induced Carrier Excitation A. Ildefonso1, J. Hales2, T. Crane2, D. McMorrow2 1. Indiana University Bloomington, USA 2. U.S. Naval Research Laboratory, USA We present details on the operation of CHALICE, which is a freely available online tool that calculates fundamental quantities related to pulsed-laser SEE testing including laser-equivalent LET and deposited charge.
DW-3	Single-Event Latch-up Data from Heavy-Ion Irradiation of COTS Components with Inter-Lot Variability Study D. Soderstrom1, I. Slipukhin1, M. Sacristan Barbero2, M. Poizat3, T. Borel3, H. Kettunen4, M. Sivertz5, N. Emriskova1, A. Waets1, K. Bilko1, M. Delrieux1, R. Garcia1 1. CERN, Switzerland 2. CIEMAT - CERN, Switzerland 3. ESA, Netherlands 4. RADEF, Finland 5. NSRL-BNL, USA Multiple samples of five different references of COTS components have been irradiated at various heavy-ion facilities, and measured single-event latch-up cross sections are reported. Part-to-part variations of latch-ups sensitivities are investigated.
DW-4	Radiation Evaluation of the TPS7H6101-SEP Radiation-Tolerant 200V, 12A GaN Half Bridge Power Stage T. Lew1, A. Marinelarena1, M. Trevino1 1. Texas Instruments, USA Single Events Effect (SEE) characterization and total ionizing dose (TID) results for the TPS7H6101-SEP eGaN power stage are summarized, showing very robust SEE performance up to LETEFF=43 MeV-cm2/mg and excellent TID behavior to 50 krad(Si).
DW-5	Compendium of NASA Goddard Space Flight Center’s Current Radiation Effects Test Results M. O’Bryan1, L. Ryder2, J. Lauenstein2, E. Wilcox3, K. Ryder3, T. Carstens2, S. Roffe2, A. Wood2, M. Campola2, J. Osheroff3, M. Joplin3 1. SSAI, Inc., USA 2. NASA GSFC, USA 3. NASA, USA We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose, and total ionizing dose (TID).
DW-6	Soft Error Evaluation of 12nm FinFET Technology Based on COTS GPU Neutron Testing L. Artola1, A. Urena-Acuna1, E. Christopher2, C. Li2, G. Hubert1 1. ONERA - University of Toulouse, France 2. University of Saskatchewan, Canada This work presents the experimental SEE evaluation of TU104 COTS-GPU designed in 12nm FinFET technology under neutron irradiations. SEU and SEFI events are discussed and compared with SEU modeling to consolidate the technology susceptibility acknowledge.
DW-7	Neutron Radiation Results of Fault-Tolerant Soft RISC-V Linux SoCs on SRAM-based FPGAs A. Wilson1, G. Baker1, M. Wirthlin1 1. Brigham Young University, USA This work presents a fault-tolerant RISC-V Linux SoC employing TMR, ECC, and SEU-aware placement on Kintex 7 and KU060 FPGAs.   The neutron radiation results demonstrate improved cross-section up to 43 times for the mitigation methods.
DW-8	Total Ionizing Dose Effects on Clock Systems and Peripheral Modules of the MSP430FR6989 I. Hudson1, J. Carpenter1, T. Peyton1, J. Kim1, R. Baltazar Felipe1, J. Ermi1, D. Loveless1 1. IU CREATE, USA TID testing of the MSP430FR6989 microcontroller was conducted to evaluate bias dependence and variation in peripheral module degradation. Three peripherals were tested at two low-power modes and over 30 configurations, showing variability in TID response.
DW-9	Threshold Shifts Caused by TID Depending on Memory Cell States in Charge Trap Flash Memories T. Ozawa1, F. Jun2, K. Kobayashi1 1. Kyoto Institute of Technology, Japan 2. Okayama Prefectural University, Japan Total Ionizing Dose effect on Triple Level Cell NAND flash was studied. Threshold shifts and retention degradation varied by programmed state and electric field direction. Errors are from both charge loss and peripheral circuit degradation.
DW-10	Radiation Evaluation of the TPS7H502X-SP Radiation-Hardness-Assured (RHA) Single-Ended PWM Controller with Integrated Silicon (Si) and Gallium Nitride (GaN) Field Effect Transistor (FET) Gate Driver T. Lew1, A. Marinelarena1, E. Johnson1 1. Texas Instruments, USA Single Events Effect (SEE) characterization and total ionizing dose (TID) results for the TPS7H502X-SP single-ended PWM controller with integrated gate driver are summarized, showing robust SEE performance up to LETEFF=75 MeV-cm2/mg and excellent TID behavior.
DW-11	Characterization of Several RF Devices Sensitivity to Total Ionizing Dose J. Diot1, G. Assaillit1, D. Poujols1, M. Gaillardin1 1. CEA, France Radio-Frequency (RF) components are increasingly used. It is therefore essential to be able to characterize their sensitivity to ionizing radiation. The aim of this study is to determine the susceptibility of five RF components.
DW-12	Single-Event Effects in Commercial Photonic Transceivers G. Tzintzarov1, J. Ocheltree1, G. Allen2, C. Boone1, A. Bozovich2 1. The Aerospace Corporation, USA 2. NASA JPL, USA The Aerospace Corporation is beginning to build a database of heavy ion data for COTS small form-factor pluggable transceivers. A small collection of transceivers were exposed to heavy ions and SEFI cross sections are shown.
DW-13	2025 CERN Compendium of Radiation Effects in Candidate Electronics for High-Energy Particle Accelerator Systems R. Ferraro1, A. Zimmaro1, A. Scialdone1, G. Foucard1, E. Vasileiadi1, S. Georgakakis1, V. Pirc1, S. Danzeca1, A. Masi1 1. CERN, Switzerland The sensitivity of a variety of components for particle accelerator electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital, and mixed devices.
DW-14	System-Level Single Event Effects Testing of the PIRT 1280MVCam InGaAs Infrared Camera L. Ryder1, J. Lauenstein1, M. Campola1, M. Kowalewski1 1. NASA GSFC, USA System-level SEE testing was conducted on a commercial-off-the-shelf InGaAs camera to examine the impacts of SEFIs originating within the constitutive electronics. SEFI signatures and the complexities of testing tightly packaged commercial imaging systems are discussed.
DW-15	SEE and Total Dose Results of the ISL74324Mxx 500MHz-6.5GHz RF Amplifier W. Newman1, M. Campanella1, D. Thornberry1, M. Bailly1, E. Thomson1 1. Renesas Electronics America, USA We report the single event performance and low dose rate TID results of the radiation-hardened ISL74324Mxx 500MHz-6.5GHz Broadband RF Amplifier.
DW-16	The Radiation Performance and Production Flows of Renesas’s Radiation Tolerant and Radiation Hardened Space Plastic Parts W. Newman1, M. Campanella1, J. Brewster1, E. Thomson1 1. Renesas Electronics America, USA We describe the production flows of Renesas’s ISL71xxxM/SLHM families of radiation-tolerant and radiation-hardened plastic-package integrated circuits and report some example single event and TID results.
DW-17	Total Dose and SEE Testing of the ISL74420M Radiation Tolerant Quad Clock Fanout IC N. van Vonno1, W. Newman1, L. Pearce1, E. Thomson1, M. Campanella1 1. Renesas Electronics America, USA We report results of total ionizing dose and single-event effects testing on the radiation tolerant ISL74420M Quad Clock Fanout IC. The part provides four synchronized clocks and is particularly useful in multiphase power converters.
DW-18	Compendium of Single-Event Effects Test Results for Candidate Electronics at NASA Johnson Space Center from 2024 R. Rinderknecht1, S. Martinez2, K. Nguyen1, E. Agarwal3, J. Pritts1, B. Reddell1, R. Gaza1 1. NASA Johnson Space Center, USA 2. NASA, USA 3. NASA Johnson Space Center, EV5 Electronic Design and Manufacturing Branch, USA We present single-event effect (SEE) test results and analysis produced by NASA JSC in 2024 for candidate electronic components and devices. Devices tested include commercial memories, integrated circuits, and a prototype flight unit.
DW-19	Total Dose and Single-Event Effects Testing of the ISL75054 Ultra-Low Noise LDO M. Campanella1, W. Newman1, N. van Vonno1, D. Wackley1, P. Larry1, E. Thomson1, C. Thomson1 1. Renesas Electronics America, USA We report the single event effects and total ionizing dose test results for the ISL75054 ultra-low noise low-dropout regulator.
DW-20	Total Ionizing Dose Response of COTS Operational Amplifiers D. Feist1, D. Hiemstra2, A. Noguera Cundar1, J. Cardenas Chavez1, L. Chen1 1. University of Saskatchewan, Canada 2. MDA, Canada This study evaluated the Total Ionizing Dose response of four different COTS operational amplifiers using low dose rate 60Co irradiation. Results revealed all amplifiers remained functional up to 30 krad(Si).
DW-21	TID and SEE Response of the AMC1350EVM Isolation Amplifier A. Noguera Cundar1, D. Hiemstra2, J. Cardenas Chavez1, L. Chen1 1. University of Saskatchewan, Canada 2. MDA, Canada TID and SEE effects on the AMC1350 isolation amplifier were studied using low dose rate 60Co irradiation and high-energy protons respectively. The isolation amplifier showed high robustness against radiation.
DW-22	Radiation Evaluation of the TPS7H4104-SP Radiation-Hardness-Assured (RHA) 3V to 7V Input, 3A/Channel Quad-Channel Synchronous Step-Down Converter A. Marinelarena1, T. Lew1, J. Cruz-Colon1 1. Texas Instruments, USA Single Events Effects characterization and Total Ionizing Dose results for the TPS7H4104-SP 3V to 7V Input, Step-Down Converter is summarized, showing very robust SEE performance up to LETEFF=75MeV-cm2/mg and excellent TID performance up to 100 krad(Si).
DW-23	Investigating the suitability of High-Performance Linux-based System-on-Modules for Lunar Applications L. Coïc1, G. Giuffrida2, E. Le Goulven1, S. Yjjou1, A. Marino2, P. Garcia1, L. Turchi3, G. Magistrati4, A. Cowley4 1. TRAD, France 2. IngeniArs, Italy 3. SPACECLICK, Italy 4. European Space Agency, Netherlands Characterization campaigns conducted on two System-on-Modules destined for lunar surface applications are presented. Their TID and SEE sensitivities were investigated under irradiation. Outgassing, Offgassing and Lifetest campaigns were also performed in this ESA project.
DW-24	Development of a Double Scattering System for Radiation Effects C. Corbridge1 1. ProNova Solutions, USA A double scattering system has been developed at ProNova Solutions for radiation effects testing. This system utilizes protons more efficiently, resulting in a more uniform 40 cm diameter beam.
DW-25	Functional Failure Induced by TID at Low-Dose Rate and High Energy Proton SEE Response of Commercial-off-the-Shelf Electronics B. Torres-Kulik1, M. Mahmud1, D. Hiemstra1 1. MDA Space, Canada Commercial-off-the-shelf electronic components were subjected to gamma (60CO) irradiation at low-dose rate and 105 MeV protons to characterize their susceptibility to total ionizing dose and proton induced single event effects respectively.
DW-26	Total Ionizing Dose Characterization of Microchip Retriggerable Latching Current Limiting Power Switch S. Russell1, D. Johnson1, E. Colmet-Daage1 1. Microchip Technology, USA The 100 krad total ionizing dose characterization results of Microchip Technology’s radiation-hardened quad retriggerable latching current limiter (RLCL) power switch IC, the LX7714, are presented.
DW-27	SEE Evaluation of a Serverless Computing Architecture under 14-MeV Neutrons D. Pacios1, M. Rezaei1, J. Vázquez-Poletti1, S. Ignacio-Cerrato1, J. Clemente1 1. Universidad Complutense de Madrid (UCM), Spain This paper presents the effects of 14-MeV neutrons on a NVIDIA Jetson Nano running a serverless computing architecture. SDCs and DUEs were observed in its CPU and GPU when executing a serverless-based FFT function.
DW-28	Heavy Ion Induced Single Event Effects on the Agilex Commercial Off-the-Shelf CMOS Field Programmable Gate Array (FPGA) R. Koga1, S. Davis1, J. Shanney1, K. Pham1, C. Cao1, K. Pham1, J. Dixon1 1. Aerospace, USA Agilex field programmable gate array (FPGA) was tested for single event effects with heavy ions. SEEs such as SEU and SEFI were detected. No destructive SELs were observed.
DW-29	Neutron-Induced Upsets and Stuck Bits on COTS Pseudo-Static RAMs M. Rezaei1, F. Franco Peláez1, A. Colangeli2, J. Clemente1 1. Universidad Complutense de Madrid (UCM), Spain 2. ENEA Frascati Research Center, Italy This paper presents an experimental study on the SEE radiation effects of several pseudo-static RAMs (PSRAMs) under 14-MeV neutrons. SEFIs and stuck-at faults were observed while performing static and dynamic tests.
DW-30	Guide to the 2024 IEEE Radiation Effects Data Workshop Record D. Hiemstra1 1. MDA Space, Canada The 2024 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.
DW-31	Single Event Upset Characterization of the Versal® Adaptive SoC Using Proton Irradiation D. Hiemstra1, N. Hu1 1. MDA Space, Canada Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Versal® Adaptive SoC Processing System and Programmable Logic are presented. Upset rate in the space radiation environment is estimated.
DW-32	Single-Event Latchup Analysis and Mitigation Techniques on I/O Standard Cells in a 12nm Bulk FinFET Technology Node M. Evans1, G. Poe1, J. Laporte1, S. Vibbert1, T. Haeffner1, J. Kauppila1, L. Massengill1 1. Reliable MicroSystems, LLC, USA Guard ring design variations are explored to mitigate single-event latch-up for Input/Output cell design. Data is presented for 12nm bulk FinFET I/O standard cells and custom structures to explore device spacing and guard ring effectiveness.
DW-33	Single Event Latch-up Performance of the INA240 with Mitigation Technique & Proton vs. Heavy Ion Rate Prediction A. Dyer1, M. Brozak1, S. Kulkarni1, A. Hof1 1. Mynaric, Germany The SEE response of the TI-INA240 Bidirectional Current Sense Amplifier has been tested with high energy protons and heavy ions to evaluate on orbit upset rates. A successful SEL mitigation and its effectiveness is presented.
DW-34	System-level Avionics Single Event Effects Testing for Extreme Space Weather Conditions A. Hands1, E. Benton2, C. Bélanger-Champagne1, B. Gersey3, M. Trinczek1, E. Blackmore1 1. TRIUMF, Canada 2. Oklahoma State University, USA 3. Founders Classical Academy, USA We present new dosimetry measurements for the development of a space weather test facility at TRIUMF, which is capable of recreating the extreme neutron fluxes that would be experienced by avionics during a 1-in-1000-year event.
DW-35	General Purpose RISC-V Processor and SOC SEE Test Results S. Guertin1 1. NASA JPL, USA We report SEE performance of RISC-V processors from StarFive (JH7110) and SiFive (U740). L2 Cache bit errors and crashes of a Linux OS provide upset sensitivity and system impact.
DW-36	Reliability Impacts of Non-Destructive Single-Event Latch-ups in Commercial Electronics S. Martinez1, R. Gaza1, R. Ladbury2, L. Ochs2, G. Allen3, A. Topper4, T. Mondy2, R. Hodson5 1. NASA Johnson Space Center, USA 2. NASA Goddard Space Flight Center, USA 3. NASA JPL, USA 4. SSAI, USA 5. Langley Research Center, USA This paper presents the results of reliability life testing performed on commercial electronic devices that experienced non-destructive single-event latch-up (SEL) during heavy-ion testing. Lifetime degradations and their implications for space applications are discussed.
DW-37	TID Induced Parametric Degradation of Commercial-off-the-Shelf Electronics and their SEE responses M. Mahmud1, B. Torreskulik1, D. Hiemstra1 1. MDA Space, Canada To characterize the radiation susceptibility, commercial-off-the-shelf electronic components were tested to gamma (Co-60) irradiation for total ionizing dose and to 105 MeV proton irradiation for single event effects.
DW-38	Multi-Angle Single Event Effects Characterization of 100V GaN-on-Si Power Transistor J. Brandt1, R. Strittmatter2 1. EPC SPACE, USA 2. EPC Corp, USA We report on Single Event (SEE) characterization of latest generation radiation hardened 100V GaN-on-Si transistors. Testing was conducted at NSRL using 147MeV/n Bi ion with nominal LET of ~83MeV/mg*cm2(in Si) over multiple angles.
DW-39	Total Ionizing Dose Effects on 28nm Microchip RT PolarFire® FPGA SRAM Physical Unclonable Functions M. Urias1, A. Cai1, N. Rezzak1, R. Newell1, R. Chipana-Quispe1, K. Dave1 1. Microchip Technology, Inc., USA This paper provides Total Ionizing Dose (TID) results and experimental evidence of the 28nm PolarFire® FPGA SRAM physical unclonable functions (PUF) maintaining operational reliability exceeding 100 krad(SiO2), demonstrating potential suitability for space application security.
DW-40	Complexities of Ionizing Radiation Testing of State-of-the-Art Single Board Computers C. Billie1, R. Pinson2, B. Rutherford1, M. Spear2, W. Slater2, H. Quinn2 1. University of New Mexico COSMIAC, USA 2. Air Force Research Laboratory, USA Evaluating complex computing systems presents challenges due to the radiation testing requirements. This work investigates ionizing radiation effects in Nvidia SBCs and power systems and components to better understand testing schemes to increase testing efficiency.
DW-41	In-Situ Measurement of TID Performance of Alphacore’s 22-nm SOI RO-PLL R. Chandru1, K. Balantrapu1, A. Benedetto1, H. Choudhary1, M. Turowski1, P. Bikkina1, E. Mikkola1, A. Levy1 1. Alphacore Inc, USA Alphacore’s RO-PLL is irradiated in Co-60 chamber up to 300 krad and we observe degradation of jitter (6x from 290fs), duty cycle distortion (6x from 0.2%) and voltage amplitude (up to 100mV from 260mV).
DW-42	Neutron Radiation Testing of Multiple System-on-Chip Devices Using an Open Test Framework J. Goeders1, W. Smith1, J. Bertrand1, E. Hunter1, M. Wirthlin1 1. Brigham Young University, USA This work presents an open-source framework for neutron testing of various system-on-chip (SoC) devices.  The framework is demonstrated through a neutron test with four different types of SoC boards and 16 boards in total.
DW-43	Radiation-Induced Single-Event Effects on Gemini APU In-Memory Processors D. Wildenstein1, M. Gruber2, G. Williams3, N. Sampson3, A. George1 1. University of Pittsburgh, USA 2. Troxel Aerospace, USA 3. GSI Technology, USA Processing-in-memory architectures exhibit many characteristics beneficial for spaceflight, including fast performance and low power consumption. This research documents the first heavy ion radiation test of the Gemini-I APU processing-in-memory architecture for single-event effects.
DW-44	Impact of Single-Event Upsets on an SPI-Controlled Ka-Band Radiation-Hardened Beamformer Core Chip for Space Applications N. Pelagalli1, F. Pergolesi2, F. Vargas1, A. Franzese3, A. Malignaggi1, C. Carta1 1. Leibniz Institute for High Performance Microelectronics, Germany 2. Paradigma Technologies, Slovenia 3. Qualcomm Technologies Inc., USA This paper presents high-energy radiation tests on a 28-GHz SPI-controlled beamformer chip for satellite communications in 130nm SiGe BiCMOS rad-hard technology. Results show robust RF performance and mixed-signal functionality despite increased SEU sensitivity.
DW-45	High-Speed In-situ TID Testing of QSFP Transceivers R. Chandru1, D. Ramaswami1, K. Balantrapu1, E. Mikkola1, S. Moazeni2 1. Alphacore Inc, USA 2. Univ of Washington Seattle, USA We describe a lightweight test setup irradiating QSFPs in Co-60 chamber and observe 100% reduction of the eye-opening at 12.5Gbps for DUTs with link loss and an increase in BER of up to 1000x.
DW-46L	2025 Compendium of Recent Test Results of Single Event Effects Conducted by the Jet Propulsion Laboratory’s Radiation Effects Group G. Allen1, S. Vartanian1, F. Irom1, A. Daniel1, S. Guertin1, A. Bozovich1 1. NASA JPL, USA   This paper reports heavy ion induced SEE results for a variety of microelectronic for possible use on NASA missoins. The compendium covers devices tested between 2020-2025. It is formatted as an update to the SEE compendia.
DW-47L	SEE and beam characterization with high energy heavy ions at HIMAC M. Cecchetto1, K. Bilko2, R. Garcia1, S. Kodaira3, J. Autran4 1. CERN, Switzerland 2. Université Jean Monnet, France 3. National Institutes for Quantum Science and Technology (QST), Japan 4. Institut de Physique de Rennes (IPR), France   Single event effect cross sections and energy deposition events in a silicon diode were measured with high energy heavy ions at HIMAC, in Japan, by varying LETs through PMMA degraders.
DW-48L	Radiation Characterization of Radiation Hardened by Design 12 nm FinFET Memories R. Lawrence1, J. Ross1, M. Casey1 1. BAE Systems, USA   Total Dose and Single Event Effect test results are discussed on Radiation Hardened by Design (RHBD) 12 nm FinFET memory devices.
DW-49L	Radiation Effects Characterization of TI ADC168M102R-SP Analog to Digital Converter (ADC) V. Narayanan1, T. Senter1, R. Rao1 1. Texas Instruments Inc., USA   Radiation study of ADC168M102R-SP 8-channel, 16-bit analog-to-digital converter released for space applications.  Device passed 100 krad total dose and is latch-up immune up to 75 MeV-cm2/mg at 125C. SET was characterized up to 48 MeV-cm2/mg.
DW-50L	Radiation Effects Characterization of TI ADC3683-SP 18bit Analog to Digital Converter (ADC) V. Narayanan1, E. Rives1, A. Arounpradith1, R. Rajagopalan1 1. Texas Instruments Inc, USA   Radiation study of ADC3683-SP 2-channel, 18-bit analog-to-digital converter released for space applications.  Device passed 300 krad total dose and is latch-up immune up to 75 MeV-cm2/mg at 125C. SET was characterized up to 78 MeV-cm2/mg.
DW-51L	SEE and TID test results of Microchip’s M6™ Power MOSFET Technology O. Mansilla1 1. Microchip, USA   Microchip’s M6™ technology has been developed to provide reliability and radiation hardness on power MOSFETs for space applications. This paper focuses on the test results, total ionizing dose (TID) and destructive single event effects (SEE).
DW-52L	Heavy ions single event latchup test results for the NA2200 analog front-end T. Rajkowski1, G. Szaciłowski1, A. Dziedzic1 1. National Centre for Nuclear Research, Poland   Heavy ions SEL test results of the NA2200 analog front-end are presented. The component might be considered for use in some space applications, although further radiation characterization (including soft SEEs and TID effects) is required.
DW-53L	SEE Results of a Custom Power Management Integrated Circuit (PMIC) Using Global Foundries 130 nm Technology M. Byers1, A. Omprakash1, R. Young1, B. Liu1, R. Ng1, A. Lara1, A. Huynh1, J. Steffan1, A. Soto1, M. Herrera1, D. Kachuche1, E. Normandy1, B. Do1, R. De Jesus1, R. Lyons1 1. Raytheon, USA   SEE test results for a custom PMIC are presented for heavy ion and proton environments. While no destructive events were observed, latchup was observed in the heavy ion environment. SEFIs were observed in both environments.
DW-54L	Heavy Ion-Induced Single-Event Effects in eGaN HEMTs A. Billa1, P. Maloney1, G. Mayberry2, T. Liu2, B. Bolton1, H. Parra1, F. Ahmed1, J. Debnath1, D. Fleetwood2, E. Zhang1 1. University of Central Florida, USA 2. Vanderbilt University, USA Angular and electric-field dependences of SELC and SEB were investigated in EPC2037 and EPC2038 eGaN HEMTs using 16- and 20-MeV ions. SELC and SEB sensitivity are found under Xe irradiation at high drain bias.

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