Very Low to High Dose Rate Irradiation Response of a Single-Mode Optical Fiber at Telecom Wavelengths

M. Roche¹, H. Boiron², T. Maraine³, E. Marin⁴, A. Meyer⁵, D. Lambert⁶, P. Paillet⁶, J. Boch³, F. Saigné³, A. Morana⁴, Y. Ouerdane⁷, A. Boukenter⁴, S. Girard⁷

1. Laboratoire Hubert Curien – CEA DAM, France
2. Exail, France
3. Université de Montpellier, France
4. Laboratoire Hubert Curien, France
5. Université Jean Monnet, France
6. CEA, France
7. Université de Saint Etienne, France

We investigate the growth kinetics of the radiation induced attenuation of 25-km long commercial Ge-doped optical fiber coils during a long-term gamma irradiation at different very low dose rates.

Analysis of Optical and Electrical Single-Event Transients in Integrated Silicon Photonic Micro-Ring Modulators

B. Ringel¹, P. Francis¹, J. Teng², M. Hosseinzadeh¹, D. Sam¹, Z. Brumbach¹, J. Shin¹, A. Ildefonso³, A. Khachatrian⁴, D. Mcmorrow⁴, J. Hales⁵, T. Crane⁵, J. Cressler¹

1. Georgia Institute of Technology, USA
2. The Aerospace Corporation, USA
3. Department of Intelligent Systems Engineering, Indiana University, USA
4. US Naval Research Laboratory, USA
5. Jacobs, Inc. and U.S. Naval Research Laboratory, USA

The SET response of MRMs is evaluated following carrier injection by laser pulses. Optical signals experience transient phenomena plausibly due to carrier and temperature changes. MRMs exhibit SET sensitivity potentially relevant for harsh environment operation.

Characterization of Single-Event Effects in Integrated Electronic-Photonic Optical Transceivers for Space-based Communications

M. Hosseinzadeh¹, J. Teng², B. Ringel¹, Y. Mensah¹, D. Sam¹, Z. Brumbach¹, A. Ildefonso³, T. Crane⁴, A. Khachatrian⁵, D. Mcmorrow⁵, J. Cressler¹

1. Georgia Institute of Technology, USA
2. The Aerospace Corporation, USA
3. Indiana University Bloomington, USA
4. Jacobs, Inc., USA
5. US Naval Research Laboratory, USA

An integrated optical transceiver in a silicon ePIC platform is exposed to pulsed-laser-induced TPA. SEE sensitivity of subsystems and the full-system is investigated, with a numerical model comparing link sensitivity to different propagating SET types.

Low Temperature Proton Irradiation and Annealing Effects on Accumulation CCDs

A. Plocina¹, V. Goiffon¹, O. Marcelot¹, S. Rizzolo², D. Marchais², O. Saint-pe², J. Pratlong³

1. ISAE-SUPAERO, France
2. Airbus Defence and Space S.A.S., France
3. Teledyne e2v, United Kingdom

This study reveals the impact of low temperature on-ground irradiation and annealing on pixel dark currents, activation energies and RTS pixels in silicon detectors, and compares these data to room temperature irradiation test results.

Proton-Induced Displacement Damage in AlGaInAs on InP Multi-Quantum-Well Continuous Wave Laser Diodes

C. Bryant¹, D. Huang², K. Arnold¹, H. Dattilo¹, D. Fleetwood¹, R. Schrimpf¹, E. Zhang², P. Harris¹, J. Trippe¹, M. Alles¹, D. Ball¹, S. Weiss¹, P. Delfyett², R. Reed¹

1. Vanderbilt University, USA
2. University of Central Florida, USA

The threshold current and the emission wavelength of AlGaInAs-InP lasers change significantly with increasing proton fluence. The observed emission wavelength shift is attributed to defects located in the bandgap, rather than increases in series resistance.