Technical Program 2025 – Session I

2025 IEEE NSREC TECHNICAL PROGRAM

SESSION I SCHEDULE

NASHVILLE RENAISSANCE HOTEL, NASHVILLE, TN

FRIDAY, JULY 18, 2025

SESSION I

Grand Ballroom 2-3

POWER DEVICES AND WIDE-BANDGAP SEMICONDUCTORS

10:45 AM

SESSION INTRODUCTION

Chair: Arthur Witulski, Vanderbilt University

I-1

10:50 AM

Temperature Effect of Single Event Burnout and Leakage Current in SiC Power MOSFETs

K. Niskanen1, A. Javanainen1, C. Martinella2, A. Witulski3, H. Kettunen1

  1. University of Jyväskylä, Finland
  2. APS Laboratory – ETH Zurich, Switzerland
  3. Vanderbilt University, USA

The effect of temperature on the heavy ion response of SiC power MOSFETs was investigated. The single event burnout (SEB) threshold increased and the ion-induced leakage current decreased with increasing temperature.

I-2

11:05 AM

Physical Model for Epitaxial Doping Dependence of Single-Event Leakage Current in SiC Power Devices

A. Sengupta1, S. Kosier1, D. Ball1, S. Islam1, A. Sternberg1, J. Hutson2, J. Osheroff3, R. Schrimpf1, K. Galloway1, A. Witulski1

  1. Vanderbilt University, USA
  2. Lipscomb University, USA
  3. NASA Goddard Space Flight Center, USA

Epitaxial doping plays a dominant role in determining the single-event leakage current degradation thresholds in silicon carbide devices. This is established using the experimental measurements of heavy-ion responses for 1200, 1800, and 4500 V devices.

I-3

11:20 AM

Laser-Induced Single-Event Burnout in GaN Devices

A. Khachatrian1, A. Koehler1, S. Buchner2, J. Hales2, D. Mcmorrow1

  1. U.S. Naval Research Laboratory, USA
  2. Jacobs, Inc., USA

Single-event effects in GaN devices are studied using ultrafast laser pulses. Defects in the GaN material lead to an increased sensitivity to SEB, suggesting that the pulsed laser can be used to screen devices.

I-4

11:35 AM

Investigations on TID Effects-Induced Parasitic Transistors in GaN Cascode Power Transistors.

H. Couillaud1, M. Gaillardin1, L. Artola2, G. Hubert2

  1. CEA, DAM, CEA-Gramat, France
  2. ONERA/DPHY, France

TID effects are studied for two commercial GaN Cascode power technologies. TID triggers unexpected parasitic transistors which are investigated using both experiments and TCAD simulations.

I-5

11:50 AM

Failure Mechanism Analysis, Modeling, and Simulation with TCAD for Wide Area SEB in 4H-SiC Power Device caused by Proton and Neutron Irradiation

H. Lee1

  1. QRT Inc, Korea, Republic of

The failure phenomenon in a wide area was analyzed, and this was explained with physical analysis and TCAD based proposed trap-assist tunneling current model for SEB during irradiation in SiC power diode.

2025 IEEE NSREC POSTER SESSION I

NASHVILLE RENAISSANCE HOTEL, NASHVILLE, TN

WEDNESDAY, JULY 16, 2025

2:50 PM – 4:50 PM

Germantown 1-3

PI-1      Single Ion-Induced Damage in Gallium Nitride High Electron Mobility Transistors

J. Gray1, A. Sternberg1, J. Kauppila2, D. Ball1, J. Trippe1, S. Kosier1, A. Witulski1, M. Alles1, J. Davidson1, R. Schrimpf1, L. Massengill1

  1. Vanderbilt University, USA
  2. Reliable MicroSystems, LLC, USA

Ion-induced damage leading to increased leakage current and hard failures in gallium nitride transistors are reported. Leakage current paths are identified using failure analysis and TCAD simulations.

PI-2      Estimating SELC and SEB Thresholds in SiC Power Devices Using Standard Benchtop Switching Energy Measurements

D. Ball1, S. Kosier1, K. Galloway1, A. Witulski1, A. Sternberg1, S. Islam1, A. Sengupta1, M. Alles1, J. Hutson2, R. Reed1, J. Osheroff3, R. Schrimpf1

  1. Vanderbilt University, USA
  2. Lipscomb University, USA
  3. NASA Goddard Space Flight Center, USA

Switching energy measurements are used to estimate ion-induced leakage and burnout thresholds in SiC power devices, while the non-linear, ion-induced carrier mobility degradation is shown to explain SELC/SEB threshold trends seen in measured data

PI-3      Impact of Proton Energy on Displacement Damage and Total Ionizing Dose in SiC Vertical Power MOSFETs

C. Martinella1, S. Bonaldo2, M. Belanche1, R. Kupper1, G. Andreetta2, M. Bagatin2, S. Gerardin3, A. Paccagnella2, U. Grossner4

  1. APS Laboratory – ETH Zurich, Switzerland
  2. University of Padova, Italy
  3. DEI – Padova University, Italy
  4. APS – ETH Zurich, Switzerland

DD and TID have been studied in SiC power MOSFETs with 1 and 3 MeV protons. Deep-level transient spectroscopy (DLTS) has been used to investigate the generation of defects in 4H-SiC wafers.

PI-4      Neutron SEE Test Considering Actual EV Operating and Environment for Commercial 1200V SiC MOSFET

M. Jo1

  1. QRT Inc., Korea, Republic of

We performed neutron SEE tests with reflecting conditions driving distance and driving environment for EVs.