NSREC 2024 Schedule

Trillium Ballroom

Prof. Vincent Goiffon

A short course, “Radiation Effects on Electronic and Photonic Technologies: from Basic Concepts to Advanced Mechanisms”, will be presented at the 2024 IEEE Nuclear and Space Radiation Effects Conference. The ongoing need to expose sensors and systems to more and more demanding radiation environments combined with the fast evolution of technologies lead to complex radiation effects in modern electronics and photonics. To enable their use in harsh radiation environments such as space, nuclear power plants, medical imaging/scientific instruments, or particle physics facilities,

it is critical for users, designers, manufacturers, and researchers to get an up-to-date overview of the underlying physics and failure mechanisms.

The short course is organized into four sections, all featuring introductory material and advanced topics. The first section addresses the basic mechanisms of radiation effects in electronics, with emphasis on displacement damage on various devices and technologies. The second part focuses on total ionizing dose induced degradation in MOS transistors, discussing the evolution of these effects with the advancement of CMOS manufacturing technologies. The third section describes single-event effects in electronics, and includes discussions about the testing approaches used to reproduce in the laboratory the failure mechanisms observed in the application. The final course presents effects on photonic material, devices and integrated circuits focusing on optical materials, optical fibers, image sensors and detector pixel arrays. More detailed descriptions of each lecture are provided below. The topics covered should benefit people new to the field as well as experienced engineers and scientists, by providing up-to-date material and insights.

The short course is intended for radiation effects engineers, component specialists, system designers, and other technical and management personnel involved in developing reliable systems designed to operate in radiation environments. It provides a unique opportunity for IEEE NSREC attendees to benefit from the expertise of excellent instructors, along with a critical review of state-of-the-art knowledge in the field. Electronic copies of detailed course notes will be provided to each participant.

Electronics operating in space-based applications are subject to radiation effects from galactic cosmic rays, solar energetic particles, and trapped particles in planetary orbits. Radiative particles can cause single-event effects (SEEs) as well as accumulated damage from total ionizing dose (TID) and displacement damage (DD), leading to data corruption, off-normal electrical conditions, performance degradation, and failure. During the first half of this short course, Dr. Elizabeth Auden from Los Alamos National Laboratory will provide an overview of space radiation environments; concepts such as particle / matter interactions, stopping power, and dose; radiation effects including TID, DD, and SEEs; and common units necessary for the of radiation effects such as dose, displacement damage dose (DDD), linear energy transfer (LET), and non-ionizing energy loss (NIEL). The second half of the short course will focus on displacement damage. Topics will include basic physical mechanisms, electrical degradation observed in different device types, and recent displacement damage research in devices with emerging materials and feature sizes.

Rideau Canal Atrium

Silicon MOSFETs have been sensitive to Total Ionizing Dose (TID) since the early days of radiation studies on electronic devices, and that is still the case after more than 40 years and 20 generations (nodes) of CMOS technologies. Silicon dioxide (SiO2), the insulator that has been a blessing for the semiconductor industry because of its compatibility with Si, has instead been a curse for the application of CMOS circuits in radiation environments. Defects in SiO2 and at its interface with the Si channel of MOS transistors have determined the TID response of CMOS circuits built in micrometer bulk planar technologies of the 1980s as well as in today’s nanometer-scale FinFETs.

In this course, prepared in collaboration with Dr. Giulio Borghello (CERN), and Dr. Stefano Bonaldo (DEI, University of Padova), Dr. Federico Faccio (CERN) will illustrate the basic mechanisms of TID in SiO2: charge yield, charge and hydrogen transport, charge trapping and de-trapping, interface state activation and annealing. The course will show how very similar mechanisms have differently affected the performance of MOSFETs in time. While in older technologies the gate oxide was the weak point and determined failure at krad TID levels, with the down-scaling of CMOS in the 100 nm range and below, the radiation response became dominated by auxiliary oxides like Shallow Trench Isolation (STI) or spacers.

The last part of the course will thus focus on the consequences of ionization in these insulators: the leakage currents that often represent the prevalent limitation to radiation tolerance in recent technologies, the dose-rate effects observable at high TID levels, and the transistor size dependencies including RINCE, RISCE (Radiation-Induced Narrow or Short Channel Effects) and halo implant effects. The manufacturing of these auxiliary oxides is less controlled and less uniform across nodes and fabrication plants than for the thermally grown gate oxide, leading to a wide variability in radiation response. This will be illustrated by a comparison between manufacturers, plants of the same manufacturer and manufacturing lots. In conclusion the course will show how, with or even without costly dedicated design techniques, TID tolerance to ultra- high levels (>100Mrad) is not a dream anymore.

Trillium Ballroom

Dr. Ani Khachatrian from the US Naval Research Laboratory will present an overview of single- event effects phenomena in devices and integrated circuits. In harsh radiation environment, in addition to total ionizing dose, displacement damage dose, microelectronic devices are susceptible to single-event effects. SEE is a phenomenon that occurs when single energetic particle such as alpha particle, heavy ion, proton, neutron or other highly energetic particle, strikes sensitive area of a microelectronic device. There are three steps that can lead to a single-event effect: charge generation via both direct and indirect interactions of an energetic particle with matter; charge collection and the associated modification of the electrical potential at a sensitive node; and the response of the circuit to the collected charge. Single-event effects can be either non-destructive or destructive and can disrupt the normal operation of a device leading to potential failure events. Non-destructive single-event effects can manifest as single-event upsets, single-event transient, multi-bit upsets, and upsets hard error. Single-event latchup, single-event burnout and single event gate rapture are the examples of destructive events. With continued technology scaling, microelectronic devices growing more complex and emergence of novel semiconductor materials, the understanding of the mechanisms leading to single-event effects becomes increasingly important.

The presentation will discuss mechanisms responsible for single-event effects formation in devices and integrated circuits; types of single-event effects in analog, digital, logic circuits, memory cells and modern microelectronic devices and different test methods of single-event effects in modern technologies, their benefits and limitations.

Rideau Canal Atrium

Photonics is an important topic due to its wide-ranging applications and transformative impact on various fields, from communications, data transfer, imaging and sensing. Today, high performance photonic solutions developed for terrestrial applications are more and more implemented in radiation-rich environments. It is then crucial to study the radiation effects on these technologies in order to be able to assess their vulnerabilities and if needed to apply hardening techniques before integrating them under irradiation.

In this lecture Prof. Sylvain Girard from University of Saint-Etienne and Dr. Cedric Virmontois from CNES will describe radiation effects on two of the main photonic technologies: image sensors and optical fibers.

The first part will address radiation effects on silica-based optical fibers and bulk glasses. The advantages and limitations for the implementation of these technologies in various harsh environments will be discussed as well as the different targeted applications from communications to sensors. The parameters governing their macroscopic radiation responses through the generation of radiation induced point defects will be reviewed as well as the existing strategies to design radiation hardened optical fibers and fiber sensors.

The second part will address image sensors and detectors. A particular emphasis will
be made on visible and infrared technologies used in space. After a description of the device principles, the lecture will focus on the performances degraded by radiation. Dark signal, noises, charge transfer inefficiency, quantum efficiency and blinking pixels will be introduced as well as how these parameters evolve under irradiation.

Prof. Vincent Goiffon

Ottawa Salon

Only for students requesting CEU credit

Trillium Ballroom

Keith Avery, Air Force Research Laboratory, General Chairman

Robert Reed, Vanderbilt University, Radiation Effects Steering Group, Executive Chair

Jonathan Pellish, NASA Goddard Space Flight Center, Technical Program Chair

Justin Likar, Johns Hopkins University Applied Physics Laboratory

 

Kumar1, M. Raquibuzzaman1, M. Buddhanoy1, T. Boykin1, B. Ray1

1. University of Alabama in Huntsville, USA

We measure total-ionizing-dose induced threshold-voltage (Vt) loss of commercial 64-layer 3-D NAND memory. Measurements show significant Vt-loss variability among the memory cells which we model using pre-existing trap-states in the tunnel oxide and Poly-Si interface.

M. Bagatin1, S. Gerardin1, A. Paccagnella1, S. Beltrami2

1. DEI - Padova University, Italy

2. Micron Technology, Italy

Total ionizing dose effects in 3D NAND flash memories with replacement gate technology are evaluated. Threshold voltage shifts, underlying mechanisms, and bit error rates are studied and compared with 3D cells with floating gate technology.

C. Martinella1, S. Bonaldo2, S. Race1, N. Fuer1, S. Mattiazzo3, M. Bagatin2, S. Gerardin2, A. Paccagnella2, U. Grossner1

1. ETH Zurich - APS Laboratory, Switzerland

2. University of Padova, Italy

3. University of Padova - INFN, Italy

TID effects in SiC are evaluated by DC measurements at ultra-high 10-keV X-ray doses up to 100 Mrad(SiO2). Significant parametric shifts are observed depending on the bias condition and on the technology generation.

S. Bonaldo1, T. Wallace2, H. Barnaby2, G. Borghello3, G. Termo3, F. Faccio3, D. Fleetwood4, A. Baschirotto5, S. Mattiazzo1, M. Bagatin1, A. Paccagnella1, S. Gerardin6

1. University of Padova, Italy

2. Arizona State University, USA

3. CERN, Switzerland

4. Vanderbilt University, USA

5. University of Milano Bicocca, Italy

6. DEI - Padova University, Italy

TID mechanisms in Si FinFETs are investigated through DC measurements and TCAD simulations. Results show that transconductance degradation and leakage current increase due to non-uniform generation of trapped charges in STI.

Canada Hall 1 & 2

Chair: Camille Bélanger-Champagne (TRIUMF)

Kumar1, M. Raquibuzzaman1, M. Buddhanoy1, T. Boykin1, B. Ray1

1. University of Alabama in Huntsville, USA

We measure total-ionizing-dose induced threshold-voltage (Vt) loss of commercial 64-layer 3-D NAND memory. Measurements show significant Vt-loss variability among the memory cells which we model using pre-existing trap-states in the tunnel oxide and Poly-Si interface.

M. Bagatin1, S. Gerardin1, A. Paccagnella1, S. Beltrami2

1. DEI - Padova University, Italy

2. Micron Technology, Italy

Total ionizing dose effects in 3D NAND flash memories with replacement gate technology are evaluated. Threshold voltage shifts, underlying mechanisms, and bit error rates are studied and compared with 3D cells with floating gate technology.

C. Martinella1, S. Bonaldo2, S. Race1, N. Fuer1, S. Mattiazzo3, M. Bagatin2, S. Gerardin2, A. Paccagnella2, U. Grossner1

1. ETH Zurich - APS Laboratory, Switzerland

2. University of Padova, Italy

3. University of Padova - INFN, Italy

TID effects in SiC are evaluated by DC measurements at ultra-high 10-keV X-ray doses up to 100 Mrad(SiO2). Significant parametric shifts are observed depending on the bias condition and on the technology generation.

S. Bonaldo1, T. Wallace2, H. Barnaby2, G. Borghello3, G. Termo3, F. Faccio3, D. Fleetwood4, A. Baschirotto5, S. Mattiazzo1, M. Bagatin1, A. Paccagnella1, S. Gerardin6

1. University of Padova, Italy

2. Arizona State University, USA

3. CERN, Switzerland

4. Vanderbilt University, USA

5. University of Milano Bicocca, Italy

6. DEI - Padova University, Italy

TID mechanisms in Si FinFETs are investigated through DC measurements and TCAD simulations. Results show that transconductance degradation and leakage current increase due to non-uniform generation of trapped charges in STI.

Canada Hall 1 & 2

Chair: Federico Ravotti CERN

Exhibit Hall A

Phil S. Dixon is a road warrior, a veracious interviewer, a tireless researcher and writer who has interviewed over 500 players, wives and their offspring for a unique perspective of the American and Negro League baseball experience, works for which he won a SABR MacMillan Award (Society of American Baseball Researchers) for his excellence in historical research. He is best known for his 7 non-fiction books which includes “The Negro Baseball Leagues A Photographs History, 1867-1955,” a Casey Award winner as the best baseball book of the year in 1992.

He is a proud member of SABR, the Missouri Writers Guild, the IBWAA (Internet Baseball Writers Association of America) and serves on the National Advisory Board for the Negro Leagues Baseball Museum. His work has been praised by a range of luminaries from Fay Vincent “Baseball Commissioner” to Stephen Jay Gould the famous “American Paleontologist.” Dixon is a Humanities Kansas presenter and a past Missouri Humanities speaker. Dixon’s most resent adventure was presenting in over 200 American cities and internationally into Canada with a presentation titled the “Kansas City Monarchs In Our Hometown,” in an effort to improve race relations. In true barnstorming fashion, he drove the entire route that covered 17 states and over 75,000 miles. His presentations and books are a fluid mix for those who enjoy professional journalism that is both humorous and insightful. Phil’s motto is “why bore your audiences and readers with sabermetrics when a touch of humor and non-sports history will suffice.”

Baseball’s quintessential barnstormer is a designation he embraces. His latest release, “The Dizzy and Daffy Dean Barnstorming Tour; Race, Media and America’s National Pastime,” continues that tradition. His writings are illustrated with stories and photographs which familiarize readers with baseball’s forgotten Negro stars through primary source research obtained during his many years of dedication to this topic. In addition to books he owns copyrights for poems and a movie script. He is a true American griot and 40 years of presenting in the Negro League genre hasn’t dulled his pursuit for greater knowledge.

Dixon left home at age-17 to pursue a musical career. He traveled the mid-west and Southern Chitlin' Circuit and journaled his experiences. He returned to Kansas City where he earned a bachelor’s degree from the University of Missouri at Kansas City. His free-lance writing for the African American owned Kansas City Call led to a major league press pass, which eventually landed him a job with the American League Kansas City Royals where he worked in Public Relations. In 1990 he co-founded the Negro League Baseball Museum in Kansas City. Phil is the husband of Dr. (Kerry) his wife of 36 years, and father of three HBCU college graduates who represent: (Langston, Howard and Fisk). Dixon, a Kansan at birth, now makes his home in Missouri with the wife, the children, his trumpet and album collection while eagerly awaiting his weekly edition of the Kansas City Call.

Chair: Courtney Matzkind, Missile Defense Agency

 

A. Ildefonso1, J. Hales1, A. Khachatrian1, G. Allen2, D. Mcmorrow1

1. U.S. Naval Research Laboratory, USA

2. Jet Propulsion Laboratory, USA

An approach to quantitatively assess the agreement between laser- and ion-induced single-event transients is presented. While demonstrated with laser and ion data, this approach can be applied to other surrogates for heavy ion testing.

J. Hales1, A. Ildefonso1, A. Khachatrian1, G. Allen2, D. Mcmorrow1

1. U.S. Naval Research Laboratory, USA

2. Jet Propulsion Laboratory, USA

An accessible approach for estimating the laser-equivalent LET for any laser geometry is presented and validated for various testing conditions. Such calculations are key for laser testing to serve as a surrogate for heavy-ion testing.

M. King1, J. Beutler1, T. Meisenheimer1, N. Smith1, K. Mai2, P. Mohan2, O. Atli2

1. Sandia National Laboratories, USA

2. Carnegie Mellon University, USA

A novel combination of techniques provides feedback RHA and RHBD activities. A pump-probe TPA and LVP technique shows radiation response of a D-Flip-Flop and shows operational circuit response of simulated radiation events.

Exhibit Hall A

Y. Qian1, N. Pieper1, Y. Xiong1, J. Pasternak2, D. Ball1, B. Bhuva1

1. Vanderbilt University, USA

2. Synposys, USA

Process-induced critical charge variability and SEE sensitivity for SRAM at 5-nm bulk FinFET technology are investigated. Results show laboratory-based electrical measurements do not accurately predict SE vulnerability of SRAMs at either cell-level or IC-level.

H. Quinn1, G. Tompkins1

1. Los Alamos National Laboratory, USA

With the recent changes in transistor design has made it harder to measure neutron-induced single-event upset (SEU) cross sections. Statistical guidance is given for testing components that are designed to be SEU hardened.

S. Lawrence1, L. John1, C. James1, D. Loveless1

1. University of Tennessee at Chattanooga, USA

A new Probabilistic-Risk-Assessment methodology is used to predict radiation-induced unavailability for a system within an arbitrary environment. A study of the NASA SpaceCube processor in ISS and GEO environments justifies mitigation strategies and quantifies risk.

Chair: Jeff George, Los Alamos National Laboratory

[11:50] Lunch / Exhibitor Raffle –
Exhibit Hall A
— and —
[11:50-12:50] IEEE Young
Professionals Lunch –
Chouteau Room
Ticket Required to Attend

A special lunch will be held in the Chouteau room for IEEE member attendees who are Young Professionals (http://yp.ieee.org/, https://www.facebook.com/ieeeyp).

This year, we will be specifically looking to hear your inputs, whether they are new experiences, lessons learned, lessons not learned, plans, successes, and even failures related to radiation effects in your career. This is an excellent opportunity for newer members of the community to informally chat, network, eat lunch, and share their visions of the radiation effects field looking forward. There’s no requirement to participate openly, and a few brief, anonymous questions followed by a moderated discussion will address the following topics:

Workforce Development

Let’s turn the tables of workforce development and hear from the youngest employees. What’s actually working in your organization? What are we missing that other young professionals need to succeed?

Engineering Resources

It’s time to discuss practical, on-the-job matters. Where can the field improve its engineering quality? How can we do our jobs better?

Radiation Effects Knowledge Transfer

Many esteemed radiation effects engineers with a lifetime of experience have developed a wealth of knowledge as the field itself evolved. How well is that knowledge spreading in your organization? Who is successfully learning on the job, and where can we do a better job of passing down the skills of the trade?

Don’t miss your opportunity to have your voice heard, meet new friends, and learn something new at the Young Professionals’ lunch. Tickets are required.

PA-1    Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

C. Bennett1, T. Xiao1, T. Leonard2, J. Young1, G. Vizkelethy1, E. Bielejec1, D. Hughart1, M. Marinella3, J. Incorvia2

1. Sandia National Laboratories, USA

2. University of Texas, Austin, USA

3. Arizona State University, USA

Domain-wall magnetic tunnel junction (DW-MTJ) parts were exposed to total ionizing doses, ion displacement damage, or both. The parts demonstrated resilience to ionizing radiation, but degraded similarly to other MTJs in response to heavy ions.

PA-2    Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors with SiO2 Tunnel Layers

Z. Guo1, E. Zhang1, D. Fleetwood1, R. Schrimpf1, R. Reed1, A. Chasin2, J. Mitard2, D. Linten2, A. Belmonte2, G. Kar2

1. Vanderbilt University, USA

2. imec, Belgium

TID effects are evaluated in IGZO thin-film transistors irradiated under different gate biases. The largest degradation occurs at negative bias. Comparison with back-gated devices indicates that hydrogen plays an important role in degradation.

PA-3    Impact of back-gate bias on the DSOI SRAMs under total ionizing dose irradiation

H. Ren1, F. Liu2, B. Li2, Z. Han2, S. Chen2, L. Wang2, S. Ma2, G. Zhang2, J. Li2, P. Cui2, J. Gao2, J. Wan3, H. Wang4

1. Institute of Microelectronics, Chinese Academy of Sciences, China

2. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

3. State Key Lab of ASIC and System, Fudan University, China

4. College of IoT Engineering, Hohai University, China

The impact of back-gate bias and film thickness on TID effect of Double-SOI SRAM are experimentally compared with and without floating body devices. Negative back-gate bias can efficiently improve TID tolerance with thin film.

PA-4    The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

A. Vidana1, J. Trippe1, N. Dodds1, N. Nowlin1, J. Kauppila2, L. Massengill2, H. Barnaby3

1. Sandia National Laboratories, USA

2. Reliable MicroSystems, USA

3. Arizona State University, USA

We present experimental total ionizing dose data on GlobalFoundries 12LP 12 nm FinFET technology. The TID response depends on both the transistor threshold voltage and on the number of fins per transistor.

PA-5    Bias Dependence of Total Ionizing Dose Effect in Top-Gate CNTFET

H. Ding1, Q. Zheng1, H. Xu2, C. Jiangwei1, N. Gao3, M. Xun1, Y. Gang1, C. He1, Y. Li1, Q. Guo1

1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS), China

2. Shanxi Institute for Carbon-based Thin Film Electronics, Peking University, China

3. Beijing Institute of Carbon-based Integrated Circuits, China

The bias dependence of TID in top-gate CNTFET is studied in this paper. ON state is the worst bias condition for the threshold voltage degradation. Abnormal shift of threshold voltage is found under TG bias.

PA-6    Towards ensuring SRAM-PUF integrity under ionizing radiation

U. Surendranathan1, H. Wilson1, A. Milenkovic1, B. Ray1

1. University of Alabama in Huntsville, USA

Power-up states of SRAM chips are routinely used to derive their PUFs. This paper shows that the data stored in SRAM during irradiation as well as the technology-node impact integrity of SRAM PUFs.

PA-7L  TID Characterization of Preformed Memristor Devices for Use as Ternary PUFs

Spear1, R. Vonniederhausern2, W. Kemp3, D. Telesca2

1. Arizona State University, USA

2. Air Force Research Laboratory, USA

3. University of New Mexico, USA

Experimental results show the response of preformed AlOx devices to TID. Due to the randomness inherent in the devices, 392 devices were tested, and distributions of the devices were investigated before and after radiation.

PA-8L  Displacement and Transient Ionizing Synergistic Effects in μA741 Bipolar Amplifier

Wang1, R. Li2, W. Chen2, X. Guo2, L. Ding2, Y. Wang1

1. Peking University, China

2. Northwest Institute of Nuclear Technology, China

DD/TREE synergistic effects in μA741 amplifier are characterized experimentally under neutron and pulsed X-ray irradiation. SPICE modeling is also accomplished based on the displacement damage and photocurrent data of bipolar transistors to analyze the mechanism.

PA-9L  On-Chip Measurement and Simulation of Transistor-Level Transient Photocurrent in Sub-50 nm SOI Technology

Vibbert1, J. Damico1, R. Cadena1, M. Alles1, D. Ball1, A. Sternberg1, E. Zhang1, T. Holman1, J. Kauppila1, L. Massengill1

1. Vanderbilt University, USA

The transistor-level transient photocurrent response of a 45nm PD-SOI technology is captured by an on-chip photocurrent measurement circuit. Both FXR and pulsed-laser irradiation trigger comparable photocurrent generation mechanisms; these results are corroborated by TCAD simulations.

PB-1    Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Beyond 16nm

L. Artola1, M. Glorieux2, G. Hubert1, C. Inguimbert1, T. Bonnoit2, R. Rey1, T. Lange2, D. Levacq3, C. Poivey3

1. ONERA, France

2. IROC Technologies, France

3. ESA, Netherlands

This work presents the impact of the angle of incidence of low-energy protons in SRAM cells of several deep sub-micron technologies. Experimental data are presented and discussed with the support of multi-physics and multi-scales simulations.

PB-2    Using Track Structure Theory to Predict Heavy-Ion and Neutron Cross-Sections

D. Hansen1, S. Resor1, D. Czajkowski1, B. Vermeire1

1. Space Micro, USA

This paper uses a track structure theory (TST) model for the calculation of 14 MeV neutron, and heavy-ion cross-sections from measured data. The TST model performs well compared to other models in the literature.

PB-3    Influence of Well Contact on Single Event Transient in sub-20 FinFET Process

Q. Sun1, Y. Guo1, B. Liang1, M. Tao2, Y. Chi1, P. Huang1, Z. Wu1, J. Chen1, D. Luo1, H. Sun1

1. National University of Defense Technology, China

2. College of Electrical and Information Engineering, Hunan University, China

This paper discusses the influence of well contact on SET in sub-20 FinFET. Experiment and high-precision TCAD simulation results show that well contact has less impact on SET, which is different from planar CMOS.

PB-4    Quantitative Analysis on Multi-Factor Coupling Influence Effects of Single Event Transient Characteristic Dependence of 22 nm FDSOI Circuits

L. Tongde1, Z. Yuanfu1

1. Beijing Microelectronics Technology Institute, China

A 22nm FDSOI test chip is designed for obtaining SET characteristics. The contribution of the influencing factors is quantified. The research results can support the flexible selection of low-cost radiation hardened methods considering conventional performance.

PB-5    Laser-induced micro-SEL current profile modeling for high-accuracy ML-based micro-SEL detection

J. Zhao1, Y. He1, Z. Qin1, K. Chong2, W. Shu2, Y. Sun1, P. Chan1, J. Chang1,2

1. Nanyang Technological University, Singapore

2. Zero-Error Systems Pte Ltd, Singapore

We present a novel laser-induced micro-Single-Event-Latchup current-profile model for Machine-Learning-based micro-SEL detection. The detection accuracy and delay are improved to ~95% from ~73% and to the microseconds range, respectively, thereby rendering practical real-time detection.

PC-1    Closing the “10-100 eV Gap” for Electron Thermalization in GaN Devices from First Principles

D. Nielsen1, C. Van de walle2, S. Pantelides3, R. Schrimpf3, D. Fleetwood3, M. Fischetti1

1. University of Texas at Dallas, USA

2. University of California, Santa Barbara, USA

3. Vanderbilt University, USA

We report full-band Monte Carlo simulations of electron thermalization in GaN from 100 eV, where energy-loss processes are poorly known. Electrons thermalize in ~1 ps, generating electron-hole pairs with an average energy of ~9.4 eV/pair.

PC-2    Modeling of Total Ionizing Dose Effects in SOI FinFETs at High Temperature

X. Zhang1, F. Liu1, B. Li1, Y. Huang1, S. Chen1, J. Li1, T. Zhang1, Q. Zhang1, H. Yin1, J. Wan2, H. Wang3, Y. Guo4, J. Luo1

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

2. State Key Laboratory of ASIC and System, Fudan University, China

3. College of IoT Engineering, Hohai University, China

4. Nanjing University of Posts and Telecommunications, China

Considering the repair effect of fixed-trapped charges and temperature dependence of threshold voltage, an electrostatic potential model of TID effect at high temperature is proposed for SOI FinFETs. Both simulations and experiments validate it.

PC-3    Ultra-high Energy Heavy Ion Irradiation Effects on Carbon Nanotubes

H. Shu1, P. Lu1, J. Gao1, P. Zhao2, M. Zhu3, J. Yan3, B. Li1

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

2. Institute of Modern Physics, Chinese Academy of Sciences, China

3. School of Information Science and Technology, North China University of Technology, China

Ultra-high energy heavy ion irradiation causes physical interaction between carbon nanotubes and the SiO2 substrate, forming distinct micrometer-size damages. The damaged region close to the incident site is insulating while adjacent carbon nanotubes are relocated.

PC-4    Investigation of Elements Migration of Organic-Inorganic Metal Halide Perovskite Films Materials Induced by Proton Irradiation

X. Zhang1, L. Wang1, H. Zhu1, P. Lu1, X. Li1, B. Li1

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

XPS and EDS analytical technology were carried out to investigate the elements migration phenomenon in perovskite materials under high fluence proton irradiation. This basic analysis is advantageous to explore the high radiation resistance of perovskite.

PC-5L  Low-Frequency Noise and Deep Level Transient Spectroscopy in NPN Si Bipolar Junction Transistors Irradiated with Si Ions

Luo1, J. Montes2, E. Bielejec2, G. Vizkelethy2, R. Schrimpf1, D. Fleetwood1, E. Zhang1

1. Vanderbilt University, USA

2. Sandia National Laboratories, USA

Deep level transient spectroscopy and 1/f noise measurements are performed on n-p-n Si BJTs irradiated with Si ions. DLTS and 1/f noise are shown to provide complementary information about defects in linear bipolar devices.

PD-1L  Impact of Ground Material and Space Protons Direction on Neutron Flux in Atmosphere

Cintas1, F. Wrobel2, F. Saigné2, M. Ruffenach1, D. Herrera3, F. Bezerra1, J. Mekki1, A. Varotsou3

1. CNES, France

2. Université de Montpellier, France

3. TRAD, France

We simulate shower of particles in atmosphere and study the effect of the presence of water at ground level. We also investigate the incidence angle of primary protons at the top of the atmosphere.

PE-1     Review of Artemis I Mission Radiation Challenges and Data for the Crew Module

C. Bailey1, R. Gaza1, C. Patel2, J. Pritts3, K. Nguyen3

1. NASA Johnson Space Center, USA

2. Lockheed Martin Corporation, USA

3. Jacobs Technology Incorporated, USA

We review the Artemis-I mission and corresponding radiation hardness assurance (RHA) process. We discuss the RHA methodologies employed, design challenges overcame, in-flight anomalies observed, and lessons learned from the mission and by the program.

PE-2     Under-Constrained SEE Data: Implications for Estimating and Bounding SEE Rates

R. Ladbury1

1. NASA Goddard Space Flight Center, USA

Increasingly scarce SEE testing resources and rapid growth of the New Space sector have in-creased the prevalence of under-constrained SEE data.  We develop Monte Carlo tools to assess implications for SEE rate estimation.

PE-3     FIERA: An FPGA Emulation-based Hardware Soft Error Tolerance Evaluation Platform for SoCs

O. Atli1, P. Mohan1, M. King2, K. Mai1

1. Carnegie Mellon University, USA

2. Sandia National Laboratories, USA

We introduce FIERA, an FPGA-accelerated flexible error injection tool 104x faster than RTL simulation-based methods.  We demonstrate the FIERA by evaluating soft error vulnerabilities of SoCs under deep learning workloads and present our test chip.

PE-4     A Confidence-Based Approach to Including Survivors in a Probabilistic TID Failure Assessment

C. Champagne1, B. Sierawski1, R. Ladbury2, M. Campola2, D. Fleetwood1

1. Vanderbilt University, USA

2. NASA Goddard Space Flight Center, USA

A probabilistic TID failure assessment is extended to include survivor data. This enables a formal analysis of radiation tolerant devices tested to a maximum dose, as well as flight heritage, in a hardness assurance methodology.

PE-5     Correlating Historical Device Degradation Data to Radiation-Induced Degradation System Effects for a LiDAR System

R. Nederlander1, A. Witulski1, A. Sternberg1, R. Reed1, G. Karsai2, R. Ladbury3, E. Zhang1, J. Evans1, R. Schrimpf1, K. Ryder3, M. Campola3, N. Mahadevan2, R. Austin3

1. Vanderbilt University, USA

2. Institute for Software Integrated Systems, Vanderbilt University, USA

3. NASA Goddard Space Flight Center, USA

Bayesian fault probabilities are used to predict TID effects in systems. These probabilities are combined to predict system level effects on a LiDAR system. This model allows for efficient prescreening of radiation sensitive systems.

PE-6     Applicability of the Accelerated ELDRS Test Method - Temperature Switching Irradiation

X. Li1, X. Wang1, M. Liu1, Y. Xin1, Q. Zheng1, J. Cui1, Y. Li1, W. Lu1, Q. Guo1

1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China

A temperature-switching irradiation (TSI) sequence based on first-principles understanding of inter-face-trap buildup and annealing is shown to be a conservative test for ELDRS at ultra-low dose rate in linear bipolar devices.

PE-7L   Heavy-Ion Test Methods and Data Analysis for Silicon Carbide Power Devices

Sengupta1, D. Ball1, A. Witulski1, R. Schrimpf1, K. Galloway1, M. Alles1, R. Reed1, E. Zhang1, J. Hutson2, J. Lauenstein3, J. Osheroff3

1. Vanderbilt University, USA

2. Lipscomb University, USA

3. NASA Goddard Space Flight Center, USA

A novel standardized single-event effects test methodology for radiation hardness assurance of silicon carbide power devices is proposed, optimized to determine the true values for both non-destructive and destructive single-event effect thresholds in these devices.

PF-1     TID-Induced Loss and Optical-Power Annealing of Straight and Curved Silicon Photonic Waveguides Using Pulsed X-rays

B. Ringel1, J. Teng1, M. Hosseinzadeh1, J. Heimerl1, Z. Brumbach1, A. Little2, G. Tzintzarov2, D. Monahan2, S. Lalumondiere2, J. Cressler1

1. Georgia Institute of Technology, USA

2. The Aerospace Corporation, USA

The TID response of straight and curved integrated silicon-photonic waveguides are evaluated. Transmission degradation, irrespective of curvature, was observed above 5 Mrad(Si). Optical-power-induced annealing due to heating was also observed and shown to recover performance.

PF-2     Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in ε-Ga2O3 Thin Films

Y. Tang1, Y. Yang2, L. Wang1, M. Li1, H. Zhu1, Z. Wu2, B. Li1

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

2. Beijing University of Posts and Telecommunications, China

1907 MeV Ta ions were employed to irradiate epitaxial ε-Ga2O3 thin films. Morphological variations and crystallographic transformations are observed in the post-irradiated films. Despite obvious degradation, ε-Ga2O3 photodetectors still operate normally under high irradiation fluences.

PF-3     Influence of Hydrogen on the Radiation-Induced Attenuation of Ge-doped Optical Fiber

A. Morana1, M. Roche1, E. Marin1, A. Boukenter1, Y. Ouerdane1, S. Girard1

1. Laboratory Hubert Curien, France

We studied the combined radiation and hydrogen effects on the NIR attenuation of a standard Ge-doped fiber up to a dose of 100 kGy, to characterize the influence of the molecular or bonded atomic hydrogen.

PF-4     Alpha Particle-Induced Persistent Effects in a COTS 3D-Integrated Imager

M. Hu1, M. Mccurdy1, B. Sierawski1, R. Schrimpf1, R. Reed1, M. Alles1

1. Vanderbilt University, USA

The nature and rate of alpha-particle-induced persistent effects observed in a heterogeneously integrated COTS 3D-IC imager are shown to be dependent on operating condition and the functional layer in which the alpha particles stop.

PG-1    Mixed-field radiation monitoring and beam characterization through silicon solid-state detectors

K. Bilko1, R. Garcia2

1. Université Jean Monnet, France

2. CERN, Switzerland

Silicon solid-state detector for the monitoring of the mixed radiation field is presented with the focus on the CERN’s CHARM facility. The use of the detector for indirect beam characterization is demonstrated.

PG-2    Correlative Single Event Latchup (SEL) characterization of the ADMV1013 Wideband Microwave Upconverter at multiple heavy ion laboratories

J. Likar1, E. Shi1, C. Pham2, T. Decker3, S. Lidia4

1. Johns Hopkins University / Applied Physics Laboratory, USA

2. Johns Hopkins University / Applied Physics Laboratory, USA

3. ADI, USA

4. Facility for Rare Isotope Beams / Michigan State University, USA

The ADMV1013 wideband, microwave upconverter was subjected to heavy ion testing at three different accelerators. Combined results illustrate the compatibility of the Michigan State University Facility for Rare Isotope Beams Single Event Effects laboratory (FSEE).

PH-1    Fault-tolerant Convolutional Neural Networks with Reconfigurable Processing Element Arrays

C. Jin1, Y. Ibrahim1, H. Tian1, S. Ko1, L. Chen1

1. University of Saskatchewan, Canada

This paper adopts multiple processing arrays with dynamic partial reconfiguration for radiation tolerance CNNs in FPGA. Fault injection and laser experiments show that critical error rate reduces by 25x, while overall accuracy remains 99%.

PH-2    In-Situ Single-Event Effects Detection in 22 nm FDSOI Flip-Flops

K. Appels1, R. Weigand2, W. Dehaene1, J. Prinzie1

1. KU Leuven, Belgium

2. European Space Agency, Netherlands

A novel Single-Event Effects in-situ error detection methodology for high-speed radiation tolerant integrated circuits. Two error detection flip-flops implemented in a 22 nm Silicon-on-Insulator technology are presented, compared and experimentally verified with two-photon absorption injection.

PH-3    A Radiation-Hardened Optical Transceiver in 180nm CMOS Technology

Y. Luo1, C. Hong2, A. Anderson1, D. Dolt1, S. Palermo1

1. Texas A&M University, USA

This paper presents the design and characterization of a radiation-hardened, VCSEL-based optical transceiver operating at 0.5 Gb/s and transmitter at 2 Gb/s. Single-event effect (SEE) and Total ionizing dose (TID) have been verified for the circuit operation.

PI-1      Synergism between Stress and Cosmic Ray Neutron Irradiation in 650V Rated IGBTs for Automotive Applications

D. Bae1, S. Khan2, K. Kim1, S. Chung3, J. Kih1, S. Woo1, C. Cho1, J. Kim1, S. Yoon1, S. Wender4, Y. Kim1

1. QRT, Republic of Korea

2. QRT, Pakistan

3. QRT, USA

4. Los Alamos National Laboratory, USA

This paper investigates the potential synergism between various stress conditions (temperature, humidity, and bias) and cosmic ray neutron irradiation and its impact on single event burnout (SEB) endurance of insulate-gate bipolar-transistor (IGBT) in terrestrial environment.

PI-2      Reliability evaluation of Convolutional Neural Network’s basic operations on a RISC-V processor

F. Santos1, O. Sentieys1, A. Kritikakou1

1. INRIA, France

We evaluate the neutron-induced error rate of Convolutional Neural Network basic operations on a RISC-V processor. Although executing the algorithm in parallel increases performance, memory errors are the major contributors to the device error rate.

PI-3      Impact of High-Level-Synthesis on Reliability of Neural Network Hardware Accelerators

M. Traiola1, F. Fernandes dos santos1, O. Sentieys1, A. Kritikakou1

1. INRIA / IRISA, France

We characterize the impact of High-Level Synthesis (HLS) on the reliability of Neural Networks on FPGAs exposed to neutron. Our results show that the larger the circuit generated by HLS, the larger the error rate.

PI-4      Tensor Processing Unit Reliability Dependence on Temperature and Radiation Source

P. Bodmann1, P. Rech2

1. UFRGS, Brazil

2. University of Trento, Italy

We compare high-energy neutrons and heavy ion cross-sections of Coral TPU, considering different temperatures. The TPU’s cross-section for heavy ions is ∼ 20x higher than for neutrons and higher temperatures reduce the neutron-induced error rate.

PI-5      Telemetry-based Analysis of Single-Event-Induced Failures in Unmanned Aerial Vehicles

S. Wang1, D. Goloubev2, S. Wen3, C. Cazzaniga4, C. Frost4, B. Bhuva1

1. Vanderbilt University, USA

2. Cisco Systems Inc., Belgium

3. Cisco Systems Inc., USA

4. Science & Technology Facilities Council, United Kingdom

Telemetry-based data collection and analysis is used to characterize single-event effects for commercially-available drones for terrestrial-neutron beam. FIT rates for different failure mechanisms show very high vulnerability.

PI-6      Temperature Dependence of Single-Event Upsets and Multi-Cell Upsets in 5-nm FinFET SRAMs

N. Pieper1, Y. Xiong1, D. Ball1, R. Fung2, S. Wen2, J. Pasternak3, B. Bhuva1

1. Vanderbilt University, USA

2. Cisco Systems, Inc., USA

3. Synopsys, Inc., USA

Single-event upset cross-sections are investigated for SRAM cells as a function of temperature for nominal and reduced supply voltages. Experiments show SEU cross-section and MCU rates decrease with increasing temperature.

CONFERENCE SOCIAL

NEGRO LEAGUES BASEBALL MUSEUM AND AMERICAN JAZZ MUSEUM

Celebrate and learn about Kansas City’s influential history in music and sport at the 2023 NSREC Conference Social. The joint venue of the Negro Leagues Baseball Museum and American Jazz Museum offers a broad perspective of these important cultural influences. Join your colleagues and friends for a BBQ buffet, beverages, and entertainment in the museums’ shared atrium. The coaches will depart from the Sheraton between 5:30 pm and 5:50 pm and they will return starting around 9:00 pm. Wine and beer are available beginning at 6:00 PM and dinner is from 6:30 to 8:00 PM. While you are catching up with old friends and meeting new ones, explore the exhibits of both remarkable museums, listen to some live jazz music, or find a table for a conversation. Dress is casual. Tickets are not included in the conference registration so be sure to purchase them with your registration.

(https://www.nlbm.com/) (https://www.americanjazzmuseum.org/)

No Content

It was the summer of 1984, and John McDonald was thirsty. On vacation in Europe, the future founder of Boulevard Brewing Company wandered into a bar specializing in Belgian beers. He tried one, then another and another, amazed by the variety, the aromas, and the flavors. He was hooked. Back home, John couldn’t stop dreaming about those beers. But dreaming was all he could do, because American beers of the time were homogenous and unremarkable. Kansas City, once home to more than a dozen breweries producing a wide array of beers, had succumbed to the industrial onslaught. Nothing was left.

After art school John made his living as a carpenter, always fascinated by the creative process. He couldn’t shake the memory of those amazing beers, and he began to wonder, began to consider the possibilities. He started homebrewing. He visited breweries. He put together a business plan, sold his house to raise money, and set out to find the rest of the resources he would need to start a brewery.

He didn’t have to look far to get started. John lived and worked in an old brick building on Southwest Boulevard that had once housed the laundry for the Santa Fe Railroad. He moved his carpentry shop to a corner and began to build a brewery. It wasn’t ideal, but it was his. It took more than a year and every bit of the money he’d raised to retrofit the building, find the equipment – including a vintage 35-barrel Bavarian brewhouse – and get everything up and running. Finally, in November 1989, the first keg of Boulevard Pale Ale was ready. John loaded it into the back of his pickup and delivered it to a restaurant just a few blocks away.

Word was spreading – Boulevard was making surprisingly good beer. The original business plan called for someday selling 6,000 barrels a year. By the third year sales passed 7,000 barrels, and continued to climb. Boulevard began selling its beers in neighboring cities and states. The original Bavarian brewhouse, designed to produce only a few thousand barrels a year, was approaching 100,000 barrels by 2004, turning out a dozen 1,000 gallon brews each and every day. But it had reached its limit, and a decision loomed.

When John built the brewery deep in the heart of a century-old urban neighborhood, he hadn’t worried about outgrowing it. But it had happened. Now, consultants said the smart move was to relocate to a new site with plenty of room. But the brewery was tightly woven into the fabric of the city, and the Boulevard team was committed to its continued revitalization. So in 2006 a $25 million expansion project brought a new building with a 150-barrel brewhouse, packaging halls, offices and hospitality spaces.

For years John had been eager to drive more experimentation and innovation, but the continuing growth of Unfiltered Wheat Beer and Pale Ale meant the brewery’s limited resources were devoted to the existing line-up. Now, with a new brewhouse, the team’s creative energies were unleashed. The Smokestack Series was launched, featuring an ever-evolving array of even bigger, bolder beers.

Boulevard loves hosting visitors, but as time went on their limited capacity meant they were turning away tens of thousands of people every year. So, in 2016 they opened the Tours & Rec Center next door to the brewery. The fully restored 1929 building serves as a hub for tours, swag, sampling and entertainment, including an experience area with exhibits about beer and Boulevard, a gift shop, and a 10,000 square foot Beer Hall. In 2019, the Tours & Rec Center was further enhanced with the opening of the Rec Deck, a fourth floor gathering space featuring deck and tabletop shuffleboard (and of course, beer).

Mr. Odell has been with Boulevard since 2007. He has held various roles within the brewery, and is currently the Filtration Supervisor. Mr. Winnie joined the Boulevard brewing team in 2022. He’s been working on the Brewhouse since arriving last year. Taran has been involved the industry since 2017 after finishing a Master’s program in Brewing Science.

Chair: George Tzintzarov, The Aerospace Corporation

 

L. Ratti1,5, P. Brogi2,5, G. Collazuol3,5, G. Dalla Betta4,5, J. Delgado3,5, P. Marrocchesi2,5, J. Minga1,5, F. Morsani5, L. Pancheri4,5, F. Pino3,5, A. Selva5, F. Stolzi2,5, G. Torilla1,5, C. Vacchi1,5

1. University of Pavia, Italy

2. University of Siena, Italy

3. University of Padova, Italy

4. University of Trento, Italy

5. National Institute for Nuclear Physics, Italy

Dark count rate is monitored in single- and dual-layer 150 nm CMOS SPADs, during and after irradiation with a neutron source, to investigate the dynamics of defect formation and short- and mid-term annealing.

A. Jouni1, V. Malherbe2, B. Mamdy2, T. Thery2, V. Correas2, S. De Paoli2, V. Lalucaa1, C. Virmontois1, G. Gasiot2, V. Goiffon3

1. CNES, France

2. STMicroelectronics, France

3. ISAE-SUPAERO, France

Different proton energies and fluxes were used to irradiate single photon avalanche diodes. Mean dark count rate increase slightly depends on the incident energy and discrepancies are underlined for different fluxes and bias conditions.

M. Benfante1, J. Reverchon1, C. Virmontois2, S. Demiguel3, V. Goiffon4

1. III-V Lab, France

2. CNES, France

3. Thales Alenia Space, France

4. ISAE-SUPAERO, France

In this work we show the effects of different parameters on the Dark Current-related Damage Rate. We investigate the proton energy effects with reverse bias, the effects of irradiation temperature and doping.

 

Pre-Function

L. Olantera1, C. Scarcella1, M. Lalovic1, S. Detraz1, C. Soos1, T. Prousalidi1, C. Sigaud1, U. Sandven1, J. Troska1

1. CERN, Switzerland

Germanium-on-Silicon photodiodes were irradiated with highly-energetic protons and neutrons to fluences exceeding 3x1016 particles/cm2. Observed changes in responsivity, dark current, and capacitance indicate excellent radiation tolerance that meets the requirements of next-generation high energy physics experiments.

M. Hosseinzadeh1, J. Teng1, B. Ringel1, D. Nergui1, A. Ildefonso2, A. Khachatrian2, D. Mcmorrow2, J. Cressler1

1. Georgia Institute of Technology, USA

2. U.S. Naval Research Laboratory, USA

Integrated SiPh MZMs are exposed to pulsed-laser-induced TPA, and the sensitivity to single-event transients is measured. A numerical model to predict the SET effects on SiPh MZM is developed, as well as a simulation path to validate the model.

M. Roche1, A. Morana1, E. Marin1, A. Boukenter1, Y. Ouerdane1, G. Melin2, T. Robin2, N. Balcon3, J. Mekki3, S. Girard1

1. Laboratory Hubert Curien, France

2. iXBlue, France

3. CNES, France

Combined radiation and temperature cycling effects on the 1550 nm radiation-induced attenuation (RIA) levels and kinetics of three commercial optical fibers with different doping (Germanium, Fluor and Phosphorus) have been investigated.

Chair: Richard Sharp, Radtest Ltd.

K. Bilko1, R. Garcia2

1. Université Jean Monnet, France

2. CERN, Switzerland

A large silicon solid-state detector is demonstrated as a solution for low-flux radiation field monitoring. The calibration of the detector is presented, with the measurements and simulations from the spectral neutron fields, e.g., atmospheric.

B. Davidson1, A. Bahadori1, K. Huddleston1, M. Pfeifer1, W. Mcneil1, D. Mcgregor1, S. Sharma1, E. Giunta1

1. Kansas State University, USA

A simulation framework was developed to predict signal formation from radiation events in GaN-based semiconductors before and after ionizing radiation exposure. Progress on modeling response of a FinFET device is shown.

Chair: Andrea Coronetti, CERN

[12:30] Lunch - On Your Own
— and —
[12:30] Women in Engineering
Lunch – Chouteau Room
Ticket Required to Attend

A special lunch will be held in the Chouteau room for Women in Engineering and is sponsored by the IEEE NPSS society. This event is open to all attendees who are interested in discussing women’s issues in engineering and other related career fields. This year's speaker is Marti McCurdy, Spirit Electronics CEO. She will be speaking on the topic "Lessons Learned from the Barnyard to the Board Room".

Talk write-up: Growing up in Central Pennsylvania’s Amish community has provided the ground work to be strong willed, resilient to a fault, and run the most award- winning small distribution channel for the Prime Defense contractors and Space Companies in the US. This talk will discuss lessons learned from six years in the Air Force and how it has prepared me for running companies as diverse as a motorcycle shop to patenting a child safety car seat alarm and the effects of being in proximity to technology helped foster the direction of a career in semiconductors. Spanning decades, lessons learned never expire, they continue to deepen and expand with the challenges facing today’s business environment.

Speaker bio: Marti McCurdy, CEO of Spirit Electronics, is a veteran not only of the semiconductor business but also a veteran of the United States Air Force. Marti’s career has been an entrepreneurial path that has driven her to start and run multiple companies. Marti acquired Spirit Electronics in September 2017, a distribution company serving military and space contractors. Marti’s focus as CEO at Spirit Electronics is to offer product plus value add, turnkey solutions to the aerospace
and defense industry for high reliability components. She exercises her engineering knowledge of space qualified flows and sophisticated testing to deliver space qualified components. Throughout her career as a business owner and past positions as VP, Marti’s goal is to bring her high standard of customer service and cultivate relationships to serve the aerospace sector she is so familiar with. Marti holds a current patent and is a published author in ultrasonic applications.

Note: Tickets are required so check the box for this lunch when you register for the conference.

DW-1   Single Event Upset Results from the Radiation Hardened Electronic Memory Experiment in a Geosynchronous Orbit

A. Vera1, A. Cover2, J. Love1, D. Alexander2

1. IDEAS Engineering and Technology, LLC, USA

2. COSMIAC, USA

Results are presented from the Radiation Hardened Electronic Memory Experiment (RHEME-3) performed on the STPSat-6 mission in a polar orbit.

DW-2   Proton Radiation Effect on Barrier Infrared Detector Focal Plane Arrays

A. Azizi1

1. Jet Propulsion Laboratory, USA

This work reports effect of proton radiation on barrier infrared detector. The results indicate that proton radiation causes slow increase in dark current.  The radiation effect on quantum efficiency of detector is not conclusive.

DW-3   Review of TID effects reported in ProASIC3 and ProASIC3L FPGAs for 3D PLUS camera heads

A. Bosser1, P. Kohler1, J. Salles1, M. Foucher1, J. Bezine1, N. Perrot1, P. Wang1

1. 3D PLUS, France

This paper compares original TID data from ProASIC3L FPGAs with existing literature, discusses the impact of different test flows on the TID response, and correlates the data with TID tests of 3D PLUS camera heads.

DW-4   Investigation of the Zynq-7000 Integrated XADC under Proton Irradiation

J. Budroweit1, F. Eichstaedt1, F. Stehle1

1. DLR e.V., Germany

This paper presents the investigation of the Xilinx Zynq-7000 system on-chip (SoC) integrated analog to digital converter (XADC) for single event effects (SEE) under proton irradiation.

DW-5   Investigation of the Xilinx SEM Core on a Zynq-based Software-Defined Radio under Proton Irradiation

J. Budroweit1, F. Stehle1, F. Eichstaedt1

1. DLR e.V., Germany

This paper presents the latest SEE test results of the Xilinx soft error mitigation (SEM) core under proton irradiation on the Zynq-7000 SoC family.

DW-6   Total Dose and Single-Event Effects Testing of the Intersil ISL73041SEH 12 V Half Bridge GaN FET Driver

M. Campanella1, W. Newman1, N. Van vonno1, D. Wackley1, T. Lok1, L. Pearce1, E. Thomson1

1. Renesas Electronics America, USA

We report the single event effects and low dose rate total ionizing dose test results for the ISL73041SEH radiation hardened PWM input 12 V Half Bridge GaN FET driver.

DW-7   The Aerospace Corporation’s Compendium of Recent Radiation Testing Results

S. Davis1, A. Yarbrough1, R. Koga1, A. Wright1, J. Shanney1, K. Pham1, C. Cao1, J. Dixon1, J. Taggart1, B. Davis1, D. Mabry1

1. The Aerospace Corporation, USA

Radiation testing was performed on several commercial components to determine the response of these components to the space radiation environment. Testing was mostly focused on SEE from protons and heavy ions.

DW-8   A53 SEE Performance in Raspberry Pi and MX8M

S. Guertin1

1. Jet Propulsion Laboratory, USA

We report SEE performance of A53 processors in Raspberry Pi 3B+ (BCM2837) and MYiRTech MYC-C8MMQ6 (IMX8M).  Error correction features and process SEE performance result in significant reduction in SEFI sensitivity

DW-9   Comparison of Figure of Merit Calculations to On-Orbit Data

R. Sean1, C. David1, B. Vermeire1, D. Hansen1

1. Space Micro, USA

This paper compares upset rates calculated using figure-of-merit methods to on-orbit data in the literature. At GEO, the FOM overestimates the rate except for missions subject to high fluxes of anomalous cosmic rays.

DW-10  Total Dose Performance at Low Dose Rate of Isolated Switching Regulator Evaluation Kits

D. Hiemstra1, S. Shi2, L. Chen2

1. MDA, Canada

2. University of Saskatchewan, Canada

Results of Cobalt-60 low dose rate irradiation of isolated switching regulator evaluation kits are provided. Their performance in the space radiation environment is discussed.

DW-11  Guide to the 2022 IEEE Radiation Effects Data Workshop Record

D. Hiemstra1

1. MDA, Canada

The 2022 Workshop Record has been, reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.

DW-12  Single-Event Effects Measurements on COTS Electronic Devices for Use on NASA Mars Missions

F. Irom1, S. Vartanian1, G. Allen1

1. Jet Propulsion Laboratory, USA

This paper reports recent single-event effects measurements results for a variety of microelectronic devices that include a voltage level translator, bus driver/buffer, DC-DC buck converter, load switch, power protection mux, transceiver, wireless transceiver, and wireless MCU.

DW-13  NVIDIA Jetson TX2i TID and Proton SEE Testing: Results and a Comparison of Two Proton Beam Facilities

S. Katz1, C. Heistand2, E. Miller3

1. Johns Hopkins University Applied Physics Laboratory, USA

2. STOKE Space Technologies Colorado, USA

3. Amazon.com, Inc., USA

Proton SEE test results for similar irradiations of the TX2i by two groups at different facilities show important discrepancies. APL’s radiation test results (proton and TID) are presented; discrepancies are explored through particle transport modelling.

DW-14  Recent Developments to the Texas A&M University Cyclotron Institute Radiation Effects Facility from 2019-2023

M. Kennas1, B. Roeder1, B. Hyman1, C. Parker1, G. Tabacaru1, G. Avila1, G. Kim1, H. Clark1, H. Park1, V. Horvat1

1. Texas A&M University Cyclotron Institute, USA

The Texas A&M University Cyclotron Institute Radiation Effects Facility has recently made facility developments that improved the availability of beam hours to address the growing demand for beam time in the radiation effects testing industry.

DW-15  Qualification of a new Total Ionizing Dose Facility Using a Hopewell GR420 Irradiator

S. Khan1, T. Vigilant1

1. Texas Instruments Inc, USA

We report on the qualification of a new Total Ionizing Dose facility using a Hopewell GR420 gamma irradiator with a Cobal-60 source. Device data is correlated to the widely used Gammacell GC220-E

DW-16  Radiation Effects Testing of the Agilex Commercial off-the-shelf CMOS Field Programmable Gate Array with Protons

R. Koga1, S. Davis1, A. Yarbrough1, J. Shanney1, K. Pham1, C. Cao1, K. Pham1, J. Dixon1

1. Aerospace, USA

Observations of proton induced single event effects on the 10 nm Agilex commercial off-the-shelf CMOS FPGA were made at three proton energy levels. The SRAM-based FPGA was sensitive to protons at these energy levels.

DW-17  High-Energy Atmospheric Neutrons Characterization of Microchip LX4580

M. Leuenberger1, R. Stevens1, S. Spanoche1, D. Johnson1

1. Microchip Technology, USA

The high-energy atmospheric neutron single event effect characterization results of Microchip Technology 24 Channel Data Acquisition System with Synchronized Motor Control Interface IC, the LX4580, are presented.

DW-18  Characterization of Low Dose Rate Ionizing Radiation Effect on the Micropac 66266-303 Optocoupler

Y. Liu1, G. Armstrong1, B. Campanini1, S. Messenger2, J. Rodriguez2

1. Micropac Industries Inc, USA

2. Northrop Grumman Corporation, USA

This paper reports low dose rate radiation test results for the Micropac 66266-303 optocoupler and presents LDR effects on the device current transfer ratio. CTR degradations are also compared between 66266 and 66224 optocouplers.

DW-19  Heavy-ion and proton characterization of AMD 7 nm Versal™  multicore scalar processing system (PS)

P. Maillard1, P. Chen1, J. Arver1

1. AMD Inc., USA

This paper presents the heavy-ion and proton single event responses of Xilinx’s 7 nm Versal™ multicore scalar processing system (PS) using Xilinx System Validation Tool (SVT) design suite. SEU, SEFI and SEL results are presented.

DW-20  A rad-hard Time-to-Digital Converter ASIC with a sub-10 ps Single-Shot Precision

B. Van Bockel1, S. Ali1, N. Jadhav1, Y. Cao1, H. Marien1

1. Magics Technologies, Belgium

A rad-hard-by-design time-to-digital converter ASIC with a single-shot precision of sub-10 ps is designed and validated in a standard CMOS technology. The presented electrical characterization and radiation results demonstrate the in-spec performance of the ASIC.

DW-21  Effects of Neutron Radiation on the Current Transfer Ratio of GaAsP and AlGaAs Optocouplers

P. Martin Holgado1, A. Romero Maestre1, J. De Martin Hernandez2, J. González Luján2, 2, M. Dominguez2, Y. Morilla1

1. Centro Nacional de Aceleradores, Spain

2. ALTER TECHNOLOGY TÜV NORD S.A.U., Spain

This work presents the degradation of GaAsP and AlGaAs optocouplers as a result of the 14.5 MeV monoenergetic neutron displacement damage. The exponential degradation of the Current Transfer Ratio parameter is studied.

DW-22  Consistent and Repeatable Transistor Level TID Transistor Array Measurement

R. Melendez1, M. Lenoardo1, L. Clark2, C. Youngsciortino1, S. Guertin1, J. Yang-scharlotta1

1. Jet Propulsion Laboratory, USA

2. ASU, USA

We present 22 nm FDSOI transistor total ionizing dose (TID) induced threshold voltage (Vt) shifts measured on a packaged array test structure. Results demonstrate high current fidelity and Vt vs. dose consistency and repeatability.

DW-23  SEE Test Results for SRAM and Register File structures compiled on 22 nm FDSOI (22FDX)

R. Melendez1, S. Guertin1, J. Yang-scharlotta1, L. Clark2

1. Jet Propulsion Laboratory, USA

2. ASU, USA

SEE performance of 22 nm FDSOI compiled SRAM and Register File structures presented. SRAM and Register File showed sensitivity to the lowest tested LET (~3 MeV-cm2/mg), and an approximate saturated cross section around 10-10 cm2/bit.

DW-24  SEU and SEFI Characterization of a Frontgrade QCOTS 512 Gb NAND Flash Nonvolatile Memory for Space Applications

P. Nelson1, M. Von thun1, A. Turnbull1, T. Meade1, B. Baranski1

1. Frontgrade Technologies, USA

Single Event Upset (SEU) and Single Event Functional Interrupt (SEFI) radiation characterization was performed on a Frontgrade quantified-off-the-shelf (QCOTS) 512 Gb 3D NAND flash memory. The device was shown to be suitable for space applications.

DW-25  Combined Displacement Damage and LDR Results of the Intersil ISL73141SEH 3.3 V Analog to Digital Converter

W. Newman1, N. Van vonno1, C. Michalski1, D. Thornberry1, J. Harris1, L. Pearce1

1. Renesas, USA

We report the combined results of the high-precision, 14-bit, 1 MSPS SAR analog-to-digital converter after exposure to 5 x 1011, 2 x 1012, and 1013 neutrons/cm2 followed by 100 krad(Si) LDR total ionizing dose.

DW-26  SEE and TID test results of radiation hardened Superjunction P-channel MOSFETs

R. Patel1, O. Mansilla1

1. IR HiRel an Infineon Technologies Company, USA

A family of radiation hardened P-channel power MOSFETs is developed that are the first P-channel FETs based on Superjunction technology. This work discusses SEE and TID test results of -60 V, -100 V and -200 V P-channel MOSFETs.

DW-27  Comparison of MSU and TAMU Heavy Ion Test Results and Evaluation Output Dependencies of SEUs for the LMK04832-SP (5962R1722701VXC) 3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs

K. Kruckmeyer1, R. Gooty1, S. Williams1, V. Vanjari1, D. Payne1

1. Texas Instruments, USA

The LMK04832-SP went through heavy ion testing at MSU and TAMU.  SEU results from the two facilities are compared and the impact of a single ion strike on multiple outputs is evaluated.

DW-28  NASA Goddard Space Flight Center’s Current Radiation Effects Test Results

M. Obryan1, E. Wilcox2, M. Joplin2, T. Carstens2, J. Barth2, M. Casey2, J. Lauenstein2, M. Campola2, J. Osheroff1, E. Wyrwas1, A. Antonsanti3, A. Le Roch4, L. Ryder2, K. Ryder2, R. Austin2, M. Berg1, P. Majewicz2, J. Pellish2

1. SSAI, Inc., USA

2. NASA Goddard Space Flight Center, USA

3. Southeastern Universities Research Association, USA

4. NASA, Oak Ridge Associated Universities, USA

We present results and analysis investigating the effects of radiation on candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).

DW-29  Follow-on Testing of the Xilinx Versal Prime

H. Quinn1, C. Corley2, G. Tompkins1, P. Thelen3

1. LANL, USA

2. University of Texas, USA

3. SNL, USA

Update results for neutron testing of the 7 nm Xilinx Versal Prime microprocessors are presented. Results show an improvement over the 2021 results.

DW-30  Irradiation Effects on Power and Timing Characteristics of Commercial 3D NAND Flash Memories

M. Raquibuzzaman1, U. Surendranathan1, M. Buddhanoy1, B. Ray1

1. University of Alabama in Huntsville, USA

We explore TID effects on power and timing characteristics of 3D NAND chip. We observe a significant increase in erase time and active power dissipation during memory operations.

DW-31  An Examination of the Radiation Sensitivity of Electronic Display Pixel Technologies

L. Ryder1, E. Wyrwas1, G. Cisneros2, J. Bautista2, X. Xu3, M. Campola1, R. Gaza2

1. NASA Goddard Space Flight Center, USA

2. NASA Johnson Space Center, USA

3. NASA Langley Research Center, USA

64 MeV proton irradiation was conducted on pixel technologies that span the range of commercially available electronic displays for crewed missions. Human-centric optical performance metrics are discussed and reported for assessment of pixel radiation susceptibilities.

DW-32  Proton and Heavy Ion SEE Data on NVIDIA and AMD Graphical Processing Units

M. Cannon1, D. Lee1, W. Evans1, I. Troxel2, M. Gruber2, D. Sabogal2

1. Sandia National Laboratories, USA

2. Troxel Aerospace Industries, USA

We present the single-event upset sensitivity and single-event latch-up results from proton and heavy ion testing performed on NVIDIA Xavier NX and AMD Ryzen V1605B GPU devices in both static and dynamic operation.

DW-33  Accelerated Nuclear Radiation Effects on the Raspberry Pi3B+ and Pi4

C. Corley1, H. Quinn2, E. Swartzlander, jr.1

1. University of Texas, USA

2. LANL, USA

Raspberry Pis running Linux and embedded benchmarks were subjected to radiation testing in the neutron beam at LANSCE. ARM A53 versus A72, single-core versus multi-core, and small versus large array SEE cross sections are compared.

DW-34  Single Event Effects and TID Characterization of the Frontgrade Technologies UT24C407 CertusTM-NX-RT FPGA for Space Applications

M. Vonthun1, B. Baranski1, A. Turnbull1

1. Frontgrade Technologies, USA

Single Event Effects (SEE) and Total Ionizing Dose (TID) radiation characterization was performed the Frontgrade Technologies UT24C407 CertusTM-NX-RT FPGA. The device was shown to be suitable for space applications.

DW-35  SEE and TID Characterization of the Frontgrade Technologies 1 Gb NOR Flash Nonvolatile Memory

Vonthun1, D. Bass1, S. Ashenafi1, G. Hoglund1, A. Turnbull1

1. Frontgrade Technologies, USA

A Frontgrade Technologies SONOS based 1 Gb NOR Flash non-volatile memory has been designed, manufactured, and characterized for radiation effects. Heavy Ion single event effects data covering SEL, SEGR, SEU, SET and SEFI will be presented.

DW-36  Single-Event Effects Response of 96- and 176-Layer 3D NAND Flash Memories

E. Wilcox1, M. Joplin1, M. Berg2

1. NASA Goddard Space Flight Center, USA

2. SSAI, Inc., USA

Single-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially available 3D NAND flash memory, with emphasis on SEFI detection and recovery.

DW-37  Total Ionizing Dose and Proton Single Event Effects in AMD Ryzen Processor Fabricated in a 12 nm Bulk FinFET Process

J. Taggart1, S. Davis1, R. Daniel1, B. Foran1, D. Bohra1, A. Hall1, A. Wright1

1. The Aerospace Corporation, USA

AMD Ryzen 3200G were tested for TID and SEE effects using Cobalt-60 and 200 MeV protons. The integrated GPU experienced TID effects prior to the CPU and SEFIs were observed during proton testing.

DW-38  Single Event Effects Results for COTS Microcontrollers and Microprocessors

S. Vartanian1, G. Allen1, F. Irom1, A. Daniel1, S. Zajac1

1. Jet Propulsion Laboratory, USA

We present single event effects results for a variety of microcontrollers and microprocessors. The devices tested include Blackfin embedded processors from Analog Devices, automotive-grade TI and Infineon microcontrollers with multiple safety features, and the MSP430FR4994.

DW-39L            2023 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator

Ferraro1, G. Panagiotis1, F. Gilles1, V. Antonio1, A. Scialdone1, A. Zimmaro1, K. Sokratis1, G. Bruno1, M. Alessandro1, S. Danzeca1

1. CERN, Switzerland

The sensitivity of a variety of components for particle accelerator electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital, and mixed devices.

DW-40L            Neutron Induced Single Event Effect Testing of a Commercial Ferroelectric Memory Device

Deaton1, M. Tostanoski1, M. Peters1, K. Hartojo1, G. Lachiewicz1, T. Fullem2

1. Radiation Test Solutions, Inc., USA

2. Flour Marine Propulsion, USA

Results of neutron (14-MeV) induced single event effect testing of a ferroelectric random access memory (FRAM) device, the Cypress FM25CL64B-GA (64-Kbit (8K x 8) Serial (SPI) F-RAM) are described.

DW-41L            Radiation Testing of NVIDIA Jetson Orin AGX System on Module

Slater1, B. Rutherford2, M. Gruber3, D. Sabogal3, I. Troxel3, J. Mee1

1. Air Force Research Laboratory, USA

2. COSMIAC R&D Center of the University of New Mexico, USA

3. Troxel Aerospace Industries, Inc., USA

For this study, proton and total ionizing dose testing was completed on the NVIDIA Jetson Orin AGX using ProNova Solutions proton beam.

DW-42L            Single Event Effect Characterization of the GR716A Rad-Hard LEON3FT Microcontroller

Tambara1, A. Oliveira1, F. Hernandez1, F. Johansson1, J. Andersson1

1. Frontgrade Gaisler AB, Sweden

This work presents the SEE characterization of Frontgrade Gaisler’s GR716A mixed-signal radiation-hardened LEON3FT microcontroller. Results show an overall SEE error rate below 7.0x10-6 events/device/day for typical orbits and SEL immunity up to LET 125 MeV.cm²/mg.

DW-43L            Total Dose and SEE Testing of the ISL73847SEH Single/Dual Phase Current Mode PWM Controller

Van Vonno1, W. Newman1, L. Pearce1, E. Thomson1, H. Trang1

1. Renesas Electronics America, USA

We report the results of total ionizing dose (TID) and single-event effects (SEE) testing carried out by Renesas Electronics America on the ISL73847SEH Current Mode Pulse Width Modulator.

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Chair: Paula Chen, AMD, Inc.

 

Y. Wang1, S. Chen1, F. Liu1, B. Li1, J. Gao1, J. Li1, C. Wang1, L. Wang1, P. Cui1, S. Ma1, Y. Liao1, T. Wang2, J. Liu2, P. Zhao3, J. Liu3, C. Huang4, Z. Han1, T. Ye1

1. Institute of Microelectronics, Chinese Academy of Sciences, China

2. Space Environment Simulation Research Infrastructure (SESRI), Harbin Institute of Technology, China

3. Institute of Modern Physics, Chinese Academy of Sciences, China

4. College of Computer Science and Technology, National University of Defense Technology, China

By adjusting back-gate bias, 6T SRAM circuit has been experimentally demonstrated with extreme tolerance to SEU. A back-gate biasing strategy is proposed in DSOI SRAM circuits which significantly lowers SEU and power without performance loss.

F. Shen1, J. Chen1, B. Liang1, Y. Chi1, Y. Wen1, and X. Wang2

1. College of Computer Science and Technology, National University of Defense Technology, China

2. College of Civil Engineering, Tongji University, China

SET sensitivity of two 28 nm CMOS low drop-out regulators with different error amplifier were studied by experiments and simulations. The regulator with rail-to-rail error amplifier has much worse response to SET.

Chair: Françoise Bezerra, CNES

E. Auden1, S. Wender1, K. Gunthoti1, P. Rech2

1. Los Alamos National Laboratory, USA

2. University of Trento, Italy

We present the first neutron-induced single-event effect experiment on a superconducting quantum interference device (SQUID). The measured neutron-induced electrical transients in SQUIDs provide insight to coherence loss in superconducting qubits exposed to ionizing radiation.

A. Sengupta1, D. Ball1, S. Islam1, A. Senarath1, A. Witulski1, R. Schrimpf1, K. Galloway1, E. Zhang1, M. Alles1, R. Reed1, M. Mccurdy1, J. Osheroff2, B. Jacob3, C. Hitchcock3, S. Goswami3, J. Hutson4

1. Vanderbilt University, USA

2. NASA Goddard Space Flight Center, USA

3. General Electric Global Research, USA

4. Lipscomb University, USA

Heavy-ion single-event burnout and leakage behavior of 1.2 kV and 3.3 kV silicon carbide power devices are analyzed based on radiation tests. The voltage capability of these devices affects the burnout and leakage thresholds differently.

Pre-Function

Z. Brumbach1, D. Nergui1, J. Teng1, Y. Mensah1, D. Sam1, A. Ildefonso2, A. Khachatrian2, D. Mcmorrow2, J. Cressler1

1. Georgia Institute of Technology, USA

2. U.S. Naval Research Laboratory, USA

SET responses of high-speed and high-breakdown SiGe HBT variants in the same technology platform were compared using laser pulses. The lower-performance, high-breakdown SiGe HBT showed a larger transient response, which is investigated using TCAD.

D. Nergui1, J. Teng1, Z. Brumbach1, A. Ildefonso2, A. Khachatrian2, D. Mcmorrow2, J. Cressler1

1. Georgia Institute of Technology, USA

2. U.S. Naval Research Laboratory, USA

Standard digital modulation schemes are compared for receiver-level SEU sensitivity using pulsed laser. Frequency shift keying demonstrated a better SEU resilience than phase shift keying despite having a worse baseline (no SET) noise performance.

J. Teng1, Y. Mensah1, Z. Brumbach1, A. Ildefonso2, A. Khachatrian2, D. Mcmorrow2, J. Cressler1

1. Georgia Institute of Technology, USA

2. U.S. Naval Research Laboratory, USA

SET responses of cross-coupled and Colpitts LC oscillators are compared using laser-induced TPA and circuit simulations. The Colpitts oscillator demonstrated smaller amplitude disturbances and faster recovery time following SET-induced drop-out.

Y. Xiong1, N. Pieper1, Y. Qian1, S. Wodzro1, B. Narasimham2, R. Fung3, S. Wen3, B. Bhuva1

1. Vanderbilt University, USA

2. Broadcom, USA

3. Cisco Systems Inc., USA

Single-event upset cross-section trends for high frequency operation of RHBD FF designs are evaluated at the 5-nm bulk FinFET node. Results show reduced RHBD efficacy at the GHz range of frequencies.

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Technical/Exhibit

Sunday-Friday

On-Site Registration – Van Horn A

Pre-Registration (Sun/Mon Only) – The Terrace

Monday

A/V Preview Room – Benton

Side Meeting Rooms – Empire A, B, C

Monday

Short Course Sessions & Exam – Exhibit Hall B

Tuesday – Friday

Technical Sessions – Exhibit Hall B

Tuesday – Wednesday

Exhibits – Exhibit Hall A

Wednesday

Poster Session – Chicago

Thursday

REDW Session – New York

Open Meeting – Exhibit Hall B

Dining/Social

Sunday

Welcome Reception – The Terrace

Monday

Breakfast – The Terrace, Atlanta

Morning Break – Prefunction

Short Course Luncheon – The Terrace, Atlanta

Afternoon Break – Prefunction

Tuesday

Breakfast, Morning Break – Exhibit Hall A

Exhibitor Lunch – Exhibit Hall A

Afternoon Break – Exhibit Hall A

Exhibit Reception – Exhibit Hall A

Wednesday

Breakfast, Morning Break – Exhibit Hall A

Exhibitor Lunch & Raffle – Exhibit Hall A

Young Professionals Lunch* – Chouteau

Afternoon Break – Prefunction

Thursday

Breakfast – The Terrace, Atlanta

Women in Engineering Lunch* – Chouteau

Morning Break – Prefunction

Afternoon Break – Prefunction

Friday

Breakfast – The Terrace, Atlanta

Morning Break – Prefunction

 

*Ticket required for this event