2026 IEEE NSREC TECHNICAL PROGRAM
SESSION D SCHEDULE
PUERTO RICO CONVENTION CENTER, SAN JUAN, PR
WEDNESDAY, JULY 22, 2026
SESSION D
Ballroom A
RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS
9:30 AM
SESSION INTRODUCTION
Chair: Corinna Martinella (University of Montpellier)
D-1
9:35 AM
Optimizing Electrical Rapid Annealing for TID Recovery in Bulk FinFETs
A. Vidana1, C. McKay1, D. Hughart1, T. Kirby1,2, N. Nowlin1, N. Dodds1, E. Zhang3, H. Barnaby2, D. Fleetwood4
1. Sandia National Laboratories, USA 2. Arizona State University, USA 3. University of Central Florida, USA 4. Vanderbilt University, USA
Electrical rapid annealing parameters are optimized to reverse TID-induced degradation in bulk FinFETs. Bulk-bias magnitude controls recovery rate dominated by tunneling- assisted charge neutralization, validated by low temperature experiments and TCAD simulations.
D-2
9:50 AM
Total Ionizing Dose Effects in QLC 3-D NAND: Characterization, Analysis and Mitigation
M. Kumar1, H. Ur Rahman1, I. Chatterjee2, B. Ray1
1. Colorado State University, USA 2. Airbus, Germany
This work performs total-ionizing-dose effects characterization of Quad-level-cell 3-D NAND flash, revealing data corruption at 5 krad(Si). We propose logical downscaling and optimized read to extend TID tolerance beyond 25 krad(Si).
D-3
10:05 AM
Investigation of the Physical Mechanisms Responsible for TID and Electrical Stress Susceptibility in p-GaN Power HEMTs
H. Couillaud1, M. Gaillardin1, L. Artola2, G. Hubert2
1. CEA, France 2. ONERA, France
Physical mechanisms contribution underlying static electrical parameter instabilities in a COTS p-GaN HEMT with Schottky gate contact are analyzed, focusing on the combined impact of total ionizing dose and several bias conditions.
D-4
10:50 AM
Total-Ionizing-Dose Effects in AlGaN/GaN FinFETs
T. Liu1, H. Lee2, S. Islam1, E. Zhang3, R. Reed1, R. Schrimpf1, S. Rajan4, D. Fleetwood1
1. Vanderbilt University, USA 2. Texas Instruments, USA 3. University of Central Florida, USA 4. Ohio State University, USA
AlGaN/GaN FinFETs and otherwise similar planar devices were subjected to 1.8-MeV proton irradiation and 10-keV X-ray irradiation. FinFETs exhibit less degradation in threshold voltage and transconductance than planar devices as a result of enhanced gate control.
D-5
11:05 AM
Heavy-Ion-Induced Degradation Dependence on Irradiation Temperature in GaN HEMTs
K. Niskanen1, A. Tallarico2, A. Javanainen1, A. Michez3, J. Boch4, F. Wrobel4, R. Germanicus5, H. Kettunen1
1. University of Jyväskylä, Finland 2. Università di Bologna, Italy 3. Delphea, France 4. Université de Montpellier, France 5. Université de Normandie, France
The effect of temperature on the heavy ion response of gallium nitride high electron mobility transistors is presented. An order of magnitude higher degradation rate is observed at 363 K compared to room temperature irradiation.
D-6
11:20 AM
The Effect of TID on SRAM Stability and PUF in GlobalFoundries 14-nm FinFET Technology
Y. Xiong1, A. Vidana1, N. Dodds1, B. Bhuva2, N. Nowlin1
1. Sandia National Laboratories, USA 2. Vanderbilt University, USA
SRAM stability is evaluated for PUF hardware authentication at a 14-nm bulk FinFET node. Results show TID significantly changes data retention voltages and power-on states of bitcells in high-performance designs but not in high-density designs.
POSTER SESSION D
PD-1
Understanding Radiation-Induced Accuracy Loss in Floating-Gate Based Analog Artificial Neural Networks
N. Afroz1, A. Sayem1, A. Dwadasi1, R. Baumann1, Y. Makris2
1. University of Texas at Dallas, USA 2. University of California, USA
We investigate how total ionizing dose-induced charge loss in analog floating-gates affects the inference accuracy of Analog Artificial Neural Networks (AANNs) and demonstrate how periodic hot-electron reprogramming can restore performance, effectively mitigating radiation-induced degradation.
PD-2
Radiation Threshold of Scaled Isotopically Pure MoS2 Nanoribbon Field-Effect Transistors
J. Yang1, T. Pena2, A. Wright1, J. Chaney1, A. Hoang2, A. Mannix2, E. Pop2, D. Daniel1, J. Taggart1, S. Stuart1, A. Bushmaker1
1. The Aerospace Corporation, USA 2. Stanford University, USA
We investigate the effects of gamma radiation on scaled monolayer molybdenum disulfide (MoS2) nanoribbon field-effect transistors. At 1 Mrad TID, threshold voltage degradation occurred while field-effect mobility remained constant, indicating gate dielectric limits radiation hardness.
PD-3
Capacitance Shifts in Multilayer Ceramic Capacitors Induced by Gamma Irradiation
P. Muscat1, H. Barnaby1, G. Rodarte1, C. Nies2, M. Conway3, D. West2, H. Hairston2, J. Neuendank1, Z. Adamany1
1. Arizona State University, USA 2. KYOCERA AVX, USA 3. KYOCERA AVX, United Kingdom
Total ionizing dose effects on capacitance were evaluated for X7R and C0G/NP0 multilayer ceramic capacitors using Co-60 gamma irradiation. X7R devices showed monotonic dose-dependent capacitance reduction, while C0G/NP0 capacitors remained stable.
PD-4
Effects of X-Ray Radiation on the Performance of Lithium Niobate MEMS Resonators
J. Vivas Gomez1, H. Parra1, E. Zhang1, J. Lee1, R. Abdolvand1
1. University of Central Florida, USA
X-ray total ionizing dose effects were investigated in resonant LiNbO3 TPoS MEMS. After radiation, resonant frequency shifts remained below 0.06%, while bounded, partially recoverable degradation in Q, keff², motional resistance, and insertion loss are observed.
PD-5
Radio Frequency Injection Effects on Electronic Devices Subject to Neutron Displacement Damage
N. Crenshaw1,2, J. Young1, J. Wallace1, I. Timmins1, L. Musson1, W. Charlton2
1. Sandia National Laboratories, USA 2. University of Texas at Austin, USA
Linear bipolar transistors, differential amplifiers, and operational amplifiers were exposed to individual and combined neutron and electromagnetic environments. Neutron displacement damage was observed to modify device and circuit response to injected RF noise.
PD-6
Ring-Oscillator-Based Methodology for Degradation Parameter Extraction After TID Irradiations
X. Zhao1, J. Kronenberg1, S. Tolson1, N. Pieper1, Y. Xiong1, B. Bhuva1
1. Vanderbilt University, USA
Different RO designs are used to determine effective degradations in NMOS and PMOS currents after TID exposures in a 3-nm bulk FinFET technology, revealing effects of irradiation bias and circuit activity that influence degradation levels.
PD-7L
Impact of Substrate Engineering on Total-Ionizing-Dose Response of GaN-Based High-Electron-Mobility Transistors
O. Meilander1, J. Kronenberg1, X. Zhao1, B. Bhuva1, M. Ebrish1
1. Vanderbilt University, USA
TID effects are evaluated for GaN HEMTs fabricated on sapphire, SiC, and engineered substrates. After 1Mrad(SiO₂) X-ray irradiation, SiC-based devices exhibit the least parameter shifts, suggesting that substrate-induced defects govern TID sensitivity in GaN HEMTs.