2026 IEEE NSREC TECHNICAL PROGRAM

POSTER SESSION SCHEDULE

PUERTO RICO CONVENTION CENTER, SAN JUAN, PR

WEDNESDAY, JULY 22, 2026

POSTER SESSION

POSTER SESSION

2:45 PM

SESSION INTRODUCTION
Chair: Vincent Goiffon (ISAE-SUPAERO)

2:50 – 4:50 PM

Poster Session

Posters — Session A

PA-1

SoC Processor and Memory Proton Testing Methodology and Results for the AMD Versal ACAP

G. Smith1, M. Wirthlin1, M. Brigham1

1. Brigham Young University, USA

A methodology is presented for testing multiple processors and 18 memories simultaneously on the Versal ACAP during a proton irradiation test. Post-run fault analysis is performed to identify the root cause of all processor failures.

PA-2

Impact of Structural and Numerical Constraints on Single-Event Upsets in ResNet50 Neural Networks

G. Qiao1, S. Feng1, G. Yu1, M. Tao2, Y. Chi1, J. Chen1, D. Luo1, J. Yang2, B. Liang1

1. National University of Defense Technology, China   2. Hunan University, China

Using software fault injection and pulsed laser experiments, this work analyzes ResNet50 failure behaviors under radiation, showing that combined structural and numerical constraints significantly enhance model robustness on AI chip.

PA-3

Heavy-Ion Testing of the AMD Versal Network-on-Chip

P. Drum1, A. George1, M. Cannon2, A. Kumar2, N. Myers2, A. Tabaczynski2, D. Lee2, N. Matter2, P. Thelen2

1. University of Pittsburgh, USA   2. Sandia National Laboratories, USA

Heavy-ion tests were performed on the Versal Network-on-Chip to determine cross sections and common errors for two general-use designs. Common errors included correctable parity errors and packet misrouting errors.

PA-4

Proton Radiation Testing of AI Models on the AMD Versal Deep Learning Processing Unit (DPU)

J. Brown1, H. Allan1, J. Goeders1, M. Wirthlin1

1. Brigham Young University, USA

Fault injection and proton radiation testing of YOLO and ResNet models on the AMD Versal DPU reveal six failure modes, model-dependent error rates, and the predictive capability of fault injection

PA-5

Evaluation of Single-Event Effects on Swin Transformer Tracking Model for Sub-20nm FinFET-based AI Chips

Z. Li1, S. Feng1, G. Yu1, M. Tao2, Y. Chi1, J. Chen1, D. Luo1, J. Yang2, Y. Liu1, F. Luo1, J. Mo1, B. Liang1

1. National University of Defense Technology, China   2. Hunan University, China

Pulsed laser and heavy-ion experiments are conducted on a Swin-Transformer-based edge tracking system. Different structural variants exhibit distinct SEFI/SEU occurrence characteristics, revealing structure-dependent reliability behaviors under radiation- induced single-event effects. –

Posters — Session B

PB-1

Microdose-Induced Stuck Bits in 7-nm FinFET SRAMs

M. Gorbunov1, E. Timokhin1, J. Weijers1, M. Van de Burgwal1, L. Berti1, G. Thys1, T. Vervecken2, D. Van Nuffel2, T. Schulte2, J. Vanden Berk2, D. Geys2, S. Bounasser3, B. Glass3

1. IMEC, Belgium   2. Magics Technologies NV, Belgium   3. ESA, Netherlands

During the heavy-ion test campaign, we observed stuck bits in 7-nm FinFET SRAM blocks with certain bitcell types. The analysis and simulation results indicated that the microdose is the primary mechanism at typical fluence levels.

PB-2

Characterization of Spatial Variability of Single-Event Latch-up in a 14-nm FinFET Technology

S. Zhao1, X. Li1, D. Zhang1, B. Li1, R. Tang1, Y. Gao1, C. Yang1, P. Lu2, L. Shu1, J. Bu1, J. Gao1

1. Institute of Microelectronics of the Chinese Academy of Sciences, China   2. Ocean University of China, China

The significant spatial heterogeneity of SEL characteristics is revealed in a 14-nm FinFET multi-core SoC through heavy-ion and pulsed-laser experiments. A differentiated hardening strategy linking sensitivity to body-tie distance is proposed to provide design guidance.

PB-3

Effects of Electrical Program/Erase Cycling on the Single-Event Response of 65-nm SONOS Charge-Trap NOR Flash Memory

A. Hubbard1, A. Murali2, H. Hunnicutt1, T. Peyton1, B. Ray2, A. Ildefonso1, D. Loveless1

1. Indiana University Bloomington, USA   2. Colorado State University, USA

Heavy‑ion testing on 65‑nm MirrorBit SONOS Charge-Trap NOR flash memory showed that program/erase‑cycled sectors exhibit significantly lower bit‑normalized SEU cross- sections compared to single‑programmed sectors.

PB-4

Mechanism Study of Heavy-Ion SEEs in a 12-bit SAR ADC in 22-nm FD-SOI

J. Zhao1, Z. Li1,2, Q. Ma1, Y. Qing1, M. Gorbunov2, M. Zhang1, E. Tackx1, J. Prinzie1, P. Leroux1

1. KU Leuven, Belgium   2. IMEC, Belgium

22-nm FD-SOI SAR ADC heavy-ion tests reveal outliers at LET 27.5–60.2. Errors map to sampling, control, comparator, and flip-flop SEEs. As cross-section rises, signatures migrate from single-mechanism to arbitrary multi-bit and mixed-mechanism errors

PB-5

Reliability of Image Classification and Object Detection on Embedded Systolic Arrays

P. Foletto Pimenta1, S. Savazzi2, E. Verroi3, M. Pullia2, F. Santos4, P. Rech1

1. University of Trento, Italy   2. Centro Nazionale di Adroterapia Oncologica, Italy   3. Trento Institute for Fundamental Physics and Applications, Italy   4. INRIA, France

We investigate the impact of 200 MeV protons on convolutions and prediction tasks executed on Tensor Processing Units. Kernel size does not impact output correctness while detection shows significantly more critical errors than classification.

PB-6

Characterization of Latent Gate Damage and Single-Event Leakage Current by Gate Charge Measurements of Irradiated Silicon Carbide Power MOSFETs

A. Sengupta1,2, R. Cadena2, J. Vielmette2, S. Islam2, X. Zhao3, D. Bal2, A. Sternberg2, J. Osheroff4, J. Hutson5, M. Alles2, K. Galloway2, A. Witulski2, R. Schrimpf2, S. Kosier2

1. DLR, Germany   2. Vanderbilt University, USA   3. Duke University, USA   4. NASA Goddard Space Flight Center, USA   5. Lipscomb University, USA

Gate charge measurements reveal that latent gate damage and drain-gate single-event leakage current in SiC MOSFETs are strongly dependent on the particle energy and drain bias during irradiation and are precursors to single-event gate rupture.

Posters — Session C

PC-1

Total Ionizing Dose Effects on the Dark Count Rate in 110 nm CMOS SPADs

L. Ratti1, A. Burdyko2, M. Campajola3, G. Collazuol4, M. Da rocha rolo5, D. Falchieri6, G. Fiorillo3, T. Floris1, F. Licciulli7, M. Mazziotta7, L. Pancheri8, L. Rignanese6, R. Santoro2, F. Shojaei1, C. Vacchi1

1. Università degli Studi di Pavia and INFN Pavia, Italy   2. Università degli Studi dell’Insubria and INFN Milano, Italy   3. Università degli Studi di Napoli Federico II and INFN Napoli, Italy   4. Università degli Studi di Padova and INFN Padova, Italy   5. INFN Torino, Italy   6. INFN Bologna, Italy   7. INFN Bari, Italy   8. Università degli Studi di Trento and INFN TIFPA, Italy

SPADs fabricated in a 110 nm CMOS technology, with different active areas and quenching features, are irradiated with 10 keV X-rays up to a total ionizing dose of 10 Mrad(SiO2). Effects on DCR are investigated.

PC-2

Effects of annealing on Ga-Free T2SL Infrared Detector

H. Mezouar1, A. Michez2, M. Tornay3, C. Cervera4, P. Christol3

1. University of Montpellier, France   2. DELPHEA, France   3. University Of Montpellier, France   4. University of Grenobles-Alpes and CEA-LETI, France

In this paper, we investigate the effect of thermal annealing on Ga-free InAs/InAsSb type- II superlattice (T2SL) midwave infrared barrier photodetectors irradiated with 60 MeV protons at fluences up to 8×1011 H+/cm².

PC-3

Radiation-Induced Charge Collection Dynamics in Short-Wavelength P+-N Silicon Avalanche Photodiodes

N. Karom1, S. Ball1, E. Teo1, A. Veluri1, P. Harris1, M. Mccurdy1, R. Schrimpf1, D. Fleetwood1, J. Trippe1, R. Nederlander2, R. Reed1, S. Weiss1

1. Vanderbilt University, USA   2. Aegis Aerospace, USA

P+-N Si-APDs show significant gain decrease under alpha irradiation compared to optical excitation. Data analysis and TCAD simulations show this results from significant increases in carrier recombination relative to avalanche generation with increasing EHP density.

PC-4

Total Ionizing Dose Effects on High-Speed Silicon Integrated Photonic Mach-Zehnder Modulators

K. Arnold1, N. Karom1, J. Slaby2, A. Veluri1, A. Kaylor2, A. Sternberg1, D. Ball1, R. Schrimpf1, D. Fleetwood1, S. Ralph2, R. Reed1, S. Weiss1

1. Vanderbilt University, USA   2. Georgia Institute of Technology, USA

Impacts of 10-keV X-ray irradiation on high-speed electro-optic response are observed in silicon Mach-Zehnder modulators. More than 50% electro-optic performance degradation is observed when devices are irradiated under active bias. Underlying ionization mechanisms are examined. The History of Puerto Rico and San Juan – INVITED SPEAKER

Posters — Session D

PD-1

Understanding Radiation-Induced Accuracy Loss in Floating-Gate Based Analog Artificial Neural Networks

N. Afroz1, A. Sayem1, A. Dwadasi1, R. Baumann1, Y. Makris2

1. University of Texas at Dallas, USA   2. University of California, USA

We investigate how total ionizing dose-induced charge loss in analog floating-gates affects the inference accuracy of Analog Artificial Neural Networks (AANNs) and demonstrate how periodic hot-electron reprogramming can restore performance, effectively mitigating radiation-induced degradation.

PD-2

Radiation Threshold of Scaled Isotopically Pure MoS2 Nanoribbon Field-Effect Transistors

J. Yang1, T. Pena2, A. Wright1, J. Chaney1, A. Hoang2, A. Mannix2, E. Pop2, D. Daniel1, J. Taggart1, S. Stuart1, A. Bushmaker1

1. The Aerospace Corporation, USA   2. Stanford University, USA

We investigate the effects of gamma radiation on scaled monolayer molybdenum disulfide (MoS2) nanoribbon field-effect transistors. At 1 Mrad TID, threshold voltage degradation occurred while field-effect mobility remained constant, indicating gate dielectric limits radiation hardness.

PD-3

Capacitance Shifts in Multilayer Ceramic Capacitors Induced by Gamma Irradiation

P. Muscat1, H. Barnaby1, G. Rodarte1, C. Nies2, M. Conway3, D. West2, H. Hairston2, J. Neuendank1, Z. Adamany1

1. Arizona State University, USA   2. KYOCERA AVX, USA   3. KYOCERA AVX, United Kingdom

Total ionizing dose effects on capacitance were evaluated for X7R and C0G/NP0 multilayer ceramic capacitors using Co-60 gamma irradiation. X7R devices showed monotonic dose-dependent capacitance reduction, while C0G/NP0 capacitors remained stable.

PD-4

Effects of X-Ray Radiation on the Performance of Lithium Niobate MEMS Resonators

J. Vivas Gomez1, H. Parra1, E. Zhang1, J. Lee1, R. Abdolvand1

1. University of Central Florida, USA

X-ray total ionizing dose effects were investigated in resonant LiNbO3 TPoS MEMS. After radiation, resonant frequency shifts remained below 0.06%, while bounded, partially recoverable degradation in Q, keff², motional resistance, and insertion loss are observed.

PD-5

Radio Frequency Injection Effects on Electronic Devices Subject to Neutron Displacement Damage

N. Crenshaw1,2, J. Young1, J. Wallace1, I. Timmins1, L. Musson1, W. Charlton2

1. Sandia National Laboratories, USA   2. University of Texas at Austin, USA

Linear bipolar transistors, differential amplifiers, and operational amplifiers were exposed to individual and combined neutron and electromagnetic environments. Neutron displacement damage was observed to modify device and circuit response to injected RF noise.

PD-6

Ring-Oscillator-Based Methodology for Degradation Parameter Extraction After TID Irradiations

X. Zhao1, J. Kronenberg1, S. Tolson1, N. Pieper1, Y. Xiong1, B. Bhuva1

1. Vanderbilt University, USA

Different RO designs are used to determine effective degradations in NMOS and PMOS currents after TID exposures in a 3-nm bulk FinFET technology, revealing effects of irradiation bias and circuit activity that influence degradation levels.

Posters — Session E

PE-1

Real-time Monitoring of the CHARM Mixed Field Irradiation with Optical Fiber Dosimeters

L. Weninger1, S. Acid1,2, Y. Aguiar3, R. Garcia3, N. Kerboub2, S. Fiore3, D. Prelipcean3, A. Morana1, S. Girard1

1. Université de Saint Etienne, France   2. CNES, France   3. CERN, Switzerland

We propose a novel approach to adapt optical-fiber based dosimeters based on the radiation-induced luminescence (RIL) phenomenon to the pulsed (spill-based time structure) mixed-field environment of the CHARM facility at CERN.

PE-2

Very High-Energy Heavy-Ion SEE Testing Results at the HEARTS@CERN Facility During the 2025 Run

B. Tissot Ferraz1, T. Beene1, D. Söderström1, I. Slipukhin1, R. Garcia1, N. Emriskova1, A. Waets1, Y. Aguiar1, D. Prelipcean1, C. Matteo1, M. Garcia1, D. Lucsanyi1, R. Federico1, G. Pezzullo1, G. Kucharska1, E. Garcia1, J. McCarthy1, M. Delrieux1

1. CERN, Switzerland

The paper presents the results of Single-Event-Effect testing of commercial electronic devices with very high-energy heavy ions at the HEARTS@CERN facility during the 2025 run, along with the beam characterization and the adopted dosimetry practices.

PE-3

Evaluating 3-D NAND as a Passive Radiation Dosimeter: A Comparison of FG and CT Technology

M. Kumar1, J. Bell1, A. Brandl1, B. Ray1

1. Colorado State University, USA

This work experimentally investigates 3-D floating-gate and charge-trap NAND flash as passive radiation dosimeters, showing linear FG sensitivity of ~12.5 mV/krad(Si), while CT exhibits multi-mechanism, non-linear response with ~35 mV/krad(Si) initially, reducing to ~18 mV/krad(Si).

PE-4

Operational Time-Resolved Single-Event Upset Rate Estimation from On-Board Particle Flux Measurements

A. Koziukov1, G. Protopopov1, M. Kozhukhov1, I. Gvozdev1

1. RH-Forecast LLC, Russian Federation

This paper presents a time-resolved, measurement-driven approach to estimate SEU rates in spacecraft memories during SPEs by reconstructing particle spectra from GOES-16 and ACE flux measurements. The method is validated against in-flight upset-count data from RHEME-3.

PE-5

Investigation of the Energy-Dependent Response of Si IGBT and SiC Power MOSFETs to Fast Neutrons

C. Cazzaniga1, F. Principato2, F. Pintacuda3, X. Ledoux4, M. Kastriotou1, C. Frost1

1. STFC, United Kingdom   2. Palermo University, Italy   3. STMicroelectronics, Italy   4. GANIL, France

Silicon IGBT and silicon carbide power MOSFETs have been studied with fast neutrons in the 2-40 MeV range at GANIL SPIRAL-2 where energy selection is possible. The results can be compared with atmospheric neutron tests.

Posters — Session F

PF-1

Dose Enhancement Effects in Nanometer-Scale Technologies

E. Wong1, B. Dodd1, C. Champagne1, D. Ball1, S. Kosier1, M. Hu1, R. Reed1, B. Sierawski1, D. Fleetwood1, R. Schrimpf1, J. Trippe1

1. Vanderbilt University, USA

Dose enhancement in nanometer-scale devices is quantified via Monte Carlo radiation- transport simulations of 22-nm FDSOI devices. Results are calibrated and compared via comparison with experimental data on structures having high-Z gate stacks.

PF-2

Electric-Field-Dependence of X-Ray TID-Induced Instabilities in Enhancement-Mode GaN HEMTs

A. Billa1, S. Shorina1, P. Maloney1, J. Debnath1, H. Parra1, B. Bolton1, E. Zhang1

1. University of Central Florida, USA

X-ray total ionizing dose effects in enhancement-mode GaN HEMTs are examined under different post-irradiation electric fields. Threshold-voltage shifts and recovery depend strongly on bias history, with TCAD simulations linking field distribution to charge trapping stability.

PF-3

Electrically detected magnetic resonance and near zero field magnetoresistance study of heavy ion irradiation in GaN pn junction diodes

D. Hassenmayer1, M. Elko1, P. Lenahan1

1. Penn State University, USA

Electrically detected magnetic resonance (EDMR) and near zero field magnetoresistance (NZFMR) measurements were utilized to detect atomic scale defects generated by heavy ion irradiation of GaN pn junction diodes at room temperature.

PF-4

Degradation mechanisms and radiation-induced material modifications in SiC power diodes

H. Goncalves de Medeiros1, N. Für1, A. Erlebach1, M. Belanche1, J. Reuteler1, K. Voss2, U. Grossner1

1. ETH Zurich, Switzerland   2. GSI, Switzerland

SELC and SEB degradation and their mechanisms in SiC power diodes are investigated through post-irradiation characterization with EDX, Ultraviolet-Visible Photoluminescence (UVPL), and Raman Spectroscopy. 3D-TCAD is employed to put the findings into perspective.

PF-5

Onset of Degradation in COTS SiC Power Diodes Exposed to High-Energy Proton Irradiation

N. Für1, H. Goncalves de Medeiros1, M. Nagel1, M. Kirchbaumer1, M. Belanche Guadas1, R. Kupper1, U. Grossner1

1. ETH Zürich, Switzerland

Based on high-energy (200 MeV) proton irradiation on COTS SiC power diodes, the impact of displacement-induced defect activation in radiation-induced damage and, in consequence, the limitations of standard derating practices are discussed.

PF-6

Investigation on Mechanism of Total Ionizing Dose Effects in Tin Oxide Field-Effect Transistors by Gamma-ray Irradiation

S. Kim1, H. Kim2, G. Jeon1, Y. Hwang1, R. Chung2, D. Kim1

1. Korea Atomic Energy Research Institute, Korea   2. Kyungpook National University, Korea

Total ionizing dose effects in SnO2 FETs were investigated using Co-60 gamma irradiation. The results revealed the dose-dependent correlation between pre-existing oxygen vacancies and radiation-induced electron-hole pairs, relating to the degradation of device performance.

PF-7

Field‑Assisted Charge Detrapping and Gain Recovering in a Standard NPN Bipolar Transistor

I. Lopez Calle1

1. European Space Agency (ESA), Netherlands

An intense electric field applied between collector and emitter accelerates charge detrapping and enables instantaneous gain recovery in irradiated bipolar COTS transistors. This approach supports hardness‑assurance methodologies and rapid in‑situ mitigation of bipolar COTS components.

Posters — Session G

PG-1

Variability Analysis of TID-Induced Failure in a Complex Microcontroller

I. Hudson1, H. Hunnicutt1, D. Loveless1

1. Indiana University, USA

Inter-device variability in TID-induced functional failure was observed across forty-six MSP430FR6989 microcontroller units. A combination of programmable bias and the internal VLO oscillator’s baseline behavior is shown to be predictive of the failure dose. Benchtop Emulation of System-Level Analog Single-Event Transients from Piece-Part PG-2 Data M. McKinney1, C. James1, T. Peyton1, H. Hunnicutt1, D. Loveless1 1. Indiana University, USA A board-level ASET emulation methodology is demonstrated by comparing heavy-ion– induced transients in a linear voltage regulator with emulated responses derived from measured piece-part SETs, enabling system verification with reduced radiation testing.

PG-3

Electron Pulses Generated by Compact Laser-Plasma Accelerators as Surrogates for Heavy Ions in Single Event Effect Testing

M. Hu1, J. Trippe1, D. Ball1, A. Sternberg1, B. Sierawski1, M. Solt2, J. Thieman2, S. Schroeder3, J. Van Tilborg3, J. Matson2, J. Warner2, B. Dorney2, R. Jacob3, C. Berger3, B. Greenwood3, S. Barber3, R. Reed1, D. Fleetwood1, S. Wolin2, K. Nagamatsu2, M. McLain2

1. Vanderbilt University, USA   2. Northrop Grumman, USA   3. Lawrence Berkeley National Laboratory, USA

Laser-plasma accelerated electron bunches are investigated as surrogates for heavy ion testing of single event effects in microelectronics. Experimental data and high-fidelity simulations show that microelectronic responses to electron bunches can mimic heavy ions.

PG-4

Augmenting Pulsed-Laser Latchup Screening Process with SEL Historical Data Model

J. Warner1, S. Messenger1, B. Song1, J. Rodriguez1

1. Northrop Grumman, USA

Pulsed-laser screening was performed on commercial CMOS devices to estimate the latchup cross-section vs LET curve and historical heavy ion data is used to bound SEL risk.

Posters — Session H

PH-1

Investigating Flux Dependent Fault Masking and Recoverability in a Mixed-Signal SoC via Spatial and Temporal Gating

A. Dwadasi1, R. Rodriguez-Davila1, M. Pate2, T. Nikoubin1, R. Baumann1

1. University of Texas at Dallas, USA   2. Texas Instruments, USA

Flux dependent fault masking in a TI F28377D-SEP microcontroller is investigated using a high-speed shutter and 3-D printed physical masks, showing how temporal and spatial gating can expose hidden unrecoverable faults during accelerated SEE testing.

PH-2

Evaluation of single-event upset effects on VGG neural networks under model lightweighting and algorithm-level hardening

N. Yingqiang1, T. Ming2, Y. Guofang1, C. Yaqing1, C. Jianjun1, L. Deng1, Y. Jiaofen2, L. Bin1

1. National University of Defense Technology, China   2. Hunan University, China

This paper investigates SEU robustness of lightweight VGG networks using ReLU_max and L1-based algorithm-level hardening, evaluated via fault injection, heavy-ion, and laser experiments on sub-20 nm FinFET AI chips, revealing compression-dependent hardening effectiveness. CLOSING REMARKS RESG NEWS The purposes of the Radiation Effects Committee (REC) of the IEEE Nuclear and Plasma Sciences Society are to advance the theory and application of radiation effects and its allied sciences, to disseminate information pertaining to those fields, and to maintain high scientific and technical standards among its members. The Committee aids in promoting close cooperation and the exchange of technical information among its members. This goal is met by running conferences for the presentation and discussion of original contributions, assisting in the publication of technical papers on radiation effects in the IEEE Transactions on Nuclear Science (TNS), coordinating development of radiation effects measurement definitions and standards within IEEE and other standards organizations, providing a sounding board for radiation effects specialists, providing for the continued professional development and needs of its members, and providing liaisons between IEEE and other technical organizations in the areas of radiation effects. Each year, the REC provides a forum for the technical exchange of information by Kay Chesnut, RTX Executive Chair holding the Nuclear and Space Radiation Effects Conference (NSREC). NSREC is an international forum for presentation of research papers on radiation effects, including effects on electronic and photonic materials, devices, circuits, sensors, systems, semiconductor processing technology, and design techniques for producing radiation- tolerant (hardened) devices and integrated circuits. Papers presented at the NSREC are submitted for possible publication in the Spring issue of the IEEE TNS. NSREC 2026 will be held in San Juan, PR, July 20-24, at the Puerto Rico Convention Center in San Juan Puerto Rico, with the adjoining Sheraton Puerto Rico Resort. Dr. Philippe Paillet, CEA, is the Conference Chair. The 2026 NSREC supporters are Southwest Research Institute, AMD, Renesas, TAU Systems, Northrop Grumman, and Aerospace Corporation. We appreciate our supporters for their significant commitment to the conference. The supporters’ ongoing commitment to NSREC allows us to keep conference registration rates affordable. We welcome other organizations to consider supporting NSREC 2027 in Atlanta, GA. Heather Quinn, Air Force Research Laboratory Executive Vice-Chair Our upcoming NSREC chairs include Jonathan Pellish, IEEE, for 2027, Pascale Gouker, MIT Lincoln Laboratories, for 2028, and Brian Sierawski, Vanderbilt University, for 2029. Papers presented at the 2026 NSREC are eligible for publication in a Spring 2027 issue of the IEEE TNS. Authors must upload their papers prior to the conference for consideration for publication in the TNS Special Issue. Detailed instructions can be found at www.nsrec.com. Keep visiting our web site for author information, paper submission details, exhibitor links, on-line registration, and the latest NSREC information. RESG NEWS All papers accepted for oral or poster presentation in the 2026 technical program will be eligible for publication in a special Spring 2027 issue of the IEEE Transactions on Nuclear Science (TNS), based on separate submission of a complete paper. Each IEEE TNS submitted paper will be subject to the standard full peer review. All papers must be submitted through the IEEE Author Portal. While this is a different site than used for submissions in previous years, the process is similar. Instructions for submitting and reviewing papers can be found under the Publications tab at the Conference website www.nsrec.com. The deadline for submission of TNS papers is July 17, 2026. Data Workshop papers are published in a Workshop Record and are not candidates for publication in the IEEE TNS. The process for the Workshop Record is managed by the Workshop Chair. Dan Fleetwood Vice-Chair of Publications The review process for papers submitted to the TNS is managed by a team of editors. To provide consistent review of papers, this editorial team manages the review process for all radiation effects papers submitted to the TNS throughout the year. The editorial team consists of a senior editor and associate editors who are technically knowledgeable in one or more specializations and are experienced in the publication process. If you would like to serve as a reviewer for the NSREC or RADECS special issues of the TNS, and/or for radiation effects papers submitted throughout the year, please contact one of the editors. The editors for the 2026 NSREC are: Dan Fleetwood, Senior Editor, Vanderbilt University Email: dan.fleetwood@vanderbilt.edu Heather Quinn, Associate Editor, Air Force Research Laboratory Email: heather.quinn.2@spaceforce.mil Steven Moss, Associate Editor, The Aerospace Corporation, retired Email: scmosshb@aol.com Vincent Goiffon, Associate Editor, ISAE-SUPAERO