2026 IEEE NSREC TECHNICAL PROGRAM
RADIATION EFFECTS DATA WORKSHOP SCHEDULE
PUERTO RICO CONVENTION CENTER, SAN JUAN, PR
THURSDAY, JULY 23, 2026
DATA WORKSHOP
Ballroom B
RADIATION EFFECTS DATA WORKSHOP
11:25 AM
WORKSHOP INTRODUCTION
Chair: Jennifer Taggart (The Aerospace Corporation)
1:20 – 3:20 PM
Radiation Effects Data Workshop · Level 3 – Ballroom B
DW-1
An Integrated National Network of Space Irradiation Facilities for Radiation Effects Testing and Component Qualification
M. Vadrucci1, R. Carpentiero1, M. Di Clemente1
1. Italian Space Agency, Italy
The paper describes ASIF, Italy’s national space irradiation network, highlighting the REX electron accelerator used within ACDC_Q to optimize diamond quantum sensors, offering controlled irradiation for space qualification and advancing technological autonomy and international research.
DW-2
ANSTO Microbeam Facility: Versatile Scanning Modalities For Radiation Testing
R. Drury1, P. Zeljko1, S. Peracchi1
1. Australian Nuclear Science and Technology Organisation, Australia
The ANSTO microbeam facilities and the latest developments in scanning modalities are presented, highlighting advanced, spatially resolved radiation testing capabilities for devices, materials, and biological samples, delivering insights into localised damage beyond conventional broad‑beam irradiation.
DW-3
A New SRIM-Based Stackup Tool for Calculating Energy Loss, LET, and Ion Range in Common SEE Testing Materials
A. Yeck1, C. Farah1, D. McNanney1, S. Lidia1
1. Facility for Rare Isotope Beams, Michigan State University, USA
The Facility for Rare Isotope Beams at Michigan State University has introduced a new SRIM-based stackup tool for calculating energy loss, LET, and range in common SEE testing materials.
DW-4
Proton and Heavy-Ion Characterizations on Microchip Radiation-Tolerant PolarFire® SoC FPGA RTPFS460ZT Microprocessor Subsystem
S. Toguchi1, N. Rezzak1, D. McNamara2, C. Jean2, B. Burke2, R. Mohan1, I. Bryant3, M. Madugoda1, M. Urias1
1. Microchip Technology, USA 2. Microchip Technology, Ireland 3. Microchip Technology, United Kingdom
This paper presents results on the impact of protons and heavy ions on the Radiation- Tolerant PolarFire® SoC FPGA RTPFS460ZT Microprocessor Subsystem (MSS), demonstrating its potential suitability for space applications.
DW-5
TID Characterization of Microchip Radiation-Tolerant PolarFire® SoC RTPFS460ZT FPGA
M. Urias1, A. Cai1, N. Rezzak1, S. Toguchi1
1. Microchip Technology, USA
This paper provides the Total Ionizing Dose (TID) response of the Radiation-Tolerant PolarFire® SoC FPGA RTPFS460ZT using gamma ray, demonstrating its resistance to TID up to 100 krad (SiO2).
DW-6
Characterization of Heavy Ion and Proton-Induced Single-Event Effects in Microchip PolarFire® SoC FPGA RTPFS460ZT Fabric
N. Rezzak1, S. Toguchi1, M. Madugoda1, M. Reaz1, M. Urias1
1. Microchip Technology, USA
This paper presents heavy ion and proton SEE results on the RTPFS460ZT PolarFire® SoC FPGA fabric. Results cover SEL, SEU, and SEFI across Flip-Flops, SRAM, Mathblock, PLL and pNVM, confirming its suitability for space environments.
DW-7
SEE and Total Dose Results of the ISL73849SLH Radiation Hardened Single/Dual Phase Current Mode PWM Controller with PMBus &Telemetry
W. Newman1, M. Campanella1, E. Thomson1, W. Choroco1, C. Thomson1
1. Renesas Electronics America, USA
We report the single event performance and low dose rate TID results of the radiation- hardened ISL73849SLH Single/Dual Phase Current Mode PWM Controller with PMBus & Telemetry.
DW-8
Total Dose and Single-Event Effects Testing of the ISL73846 2MHz Double Ended PWM Controller with Synchronous Rectification
M. Campanella1, W. Newman1, E. Thomson1, C. Thomson1, T. Linder1
1. Renesas Electronics America, USA
We report the single event effects and total ionizing dose test results for the ISL73846 2MHz double ended PWM controller with synchronous rectification.
DW-9
Total Dose and Single-Event Effects Testing of the ISL75055 3A Source and Sink DDR Terminator/LDO with Buffered Reference
M. Campanella1, W. Newman1, E. Thomson1, C. Thomson1, D. Wackley1
1. Renesas Electronics America, USA
We report the single event effects and total ionizing dose test results for the ISL75055 3A Source and Sink DDR Terminator/LDO with Buffered Reference.
DW-10
Compendium of NASA Goddard Space Flight Center’s Current Radiation Effects Test Results
L. Ryder1, K. Ryder1, E. Wilcox1, T. Carstens1, S. Roffe1, A. Wood1, M. Campola1, J. Osheroff1, M. Joplin1
1. NASA Goddard Space Flight Center, USA
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion- and proton-induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
DW-11
A Novel Multifunctional Radiation Shielding to Enable the use of COTS based Electronics in Space
L. Sihver1, Y. Barghouty1
1. Cosmic Shielding Corporation, USA
A lightweight hydrogen rich nano doped Multifunctional Shielding Polymer (MSP), commercially branded as Plasteel™, with exceptional shielding properties, and good mechanical and thermal characteristics will be presented.
DW-12
Heavy Ion Characterization of F28377D-SEP Microcontroller
A. Dwadasi1, M. Pate2, R. Rodriguez-Davila1, T. Nikoubin1, R. Baumann1
1. University of Texas at Dallas, USA 2. Texas Instruments, USA
This work reports the SEL, SEU and SEFI test results obtained from Heavy-Ion testing of TI F28377D-SEP Microcontroller. This dual-core microcontroller is designed for real-time closed-loop control in power and motor-drive applications with dedicated peripherals.
DW-13
Radiation Evaluation of the TPS7H1301-SP 3V to 6.3V Input, 400mA, -6V to -0.6V Radiation-Hardened Switched Capacitor Voltage Inverter with Integrated Low Dropout Regulator
A. Marinelarena1, T. Lew1, M. Trevino1
1. Texas Instruments, USA
Single Events Effects and Total Ionizing Dose results for the TPS7H1301-SP 3V to 6.3V Input, Switched Capacitor Voltage Inverter is summarized, showing robust SEE performance up to LETEFF=75MeV-cm2/mg and excellent TID performance up to 100krad(Si).
DW-14
Neutron Irradiation of BJT-Based Level Translators and TVS Diodes for Fusion Reactor Systems
K. Reed1, N. Ericson1, S. Frank1, L. Clonts1, P. Mulligan1, F. Ivester1, C. Harvey1, H. Patel1
1. Oak Ridge National Laboratory, USA
Emerging fusion reactors require advanced instrumentation and control systems in locations subject to high neutron and gamma doses. This summary details the irradiation testing and results of level translator and protection circuitry for ITER subsystems.
DW-15
Irradiation of Operational Amplifiers for Fusion Reactor Instrumentation and Control
N. Ericson1, K. Reed1, S. Frank1, L. Clonts1, P. Mulligan1, F. Ivester1, C. Harvey1, H. Patel1
1. Oak Ridge National Laboratory, USA
An electronics system for monitoring ITER vacuum/gas systems was prototyped without radiation-hardened components. In response to ITER’s demanding radiation levels, this paper reports detailed testing of a precision amplifier, summarizing test design and performance trends.
DW-16
Single Event Effects Susceptibilities of Select Commercial-Off-The Shelf Components for Space
D. Lo1, T. Tran1
1. Northrop Grumman Systems Corporation, USA
We report the results of single event effects (SEE) testing with heavy ions of COTS (commercial-off-the-shelf) electronic components considered for space missions.
DW-17
Characterization of the sensitivity of three MMIC LNAs to Total Ionizing Dose
J. Diot1, M. Gaillardin1, G. Assaillit1, C. Delbos1, D. Poujols1
1. CEA, France
High-performance RF components are being increasingly used in different applications. It is essential to characterize their sensitivity to ionizing radiation. This study aims to determine the susceptibility of three LNAs: CMD319C3, CMD264P3, and HMC8411LP2FE.
DW-18
SEE Test Results of Microchip’s Radiation Hardened Resettable Latch-up Current Limiter LX7714
J. Heun1, E. Colmet-Daage1, R. Stevens1, D. Johnson1, O. Mansilla1
1. Microchip Technology, USA
Microchip has developed the radiation hardened LX7714 power switch to protect satellite power buses from destructive overcurrent events. This paper focuses on destructive Single Event Latch-up (SEL) and Single Event Transient (SET) test results.
DW-19
Single Event Effects and Total Ionizing Dose Characterization of the Frontgrade Technologies UT88ETHPHY4P10G Four Port 10GBase-T Ethernet PHY
M. Vonthun1, A. Turnbull1, V. Olariu1, R. Dumitru1, B. Baranski1, G. Hoglund1
1. Frontgrade Technologies, USA
The UT88ETHPHY4P10G 10G Ethernet Phy was characterized for SEL and SEFI up to a LET of 67 MeV∙cm2/mg with heavy ions and characterized for total ionizing dose to 300 krad(Si).
DW-20
Single Event Effects and Total Ionizing Dose Characterization of the Frontgrade Technologies UT8MRQRHXG QSPI MRAM Memory
M. Vonthun1, E. Fehrman1, R. Dumitru1, G. Hoglund1, A. Turnbull1, J. Benthem1, S. Sapp1
1. Frontgrade Technologies, USA
The UT8MRQRHXG QSPI MRAM was characterized for SEL and SEFI up to a LET of 77.5 MeV∙cm2/mg with heavy ions and characterized for total ionizing dose to 300 krad(Si).
DW-21
Radiation Testing of the FeRAM-version of the MSP430FR5994
H. Quinn1, M. Felix2, W. Slater1
1. Air Force Research Laboratory, USA 2. Cosmiac, USA
The Texas Instruments MSP430FR5994 is a potential option for direct-to-digital computation for low-bandwidth sensors. The results are compared to a previous version of the component.
DW-22
Heavy Ion and Proton Radiation Test Results for Micron DDR4 DRAM
I. Troxel1, M. Gruber1, D. Christenson1, P. Tokeshi2, B. Mark2
1. Troxel Aerospace Industries, USA 2. Moog Broad Reach, USA
Heavy ion and proton DSEE and NDSEE characterization results are presented for testing of Micron DDR4 DRAM devices.
DW-23
A Combined, Radiation-Electrical Stress Characterization of Power GaN HEMTs
J. Van Burger1, J. Oarethu1, C. Pham1, N. French1, N. Leak2, S. Defaz2, J. Saldivar2, F. Luo2, M. Salato3, R. Strittmatter4, J. Likar1, J. Kozak1
1. Johns Hopkins Applied Physics Lab, USA 2. Stony Brook University, USA 3. EPC Space, USA 4. EPC Corporation, USA
GaN HEMTs offer advantages for space power electronics because of increasing power density and TID resilience. Electrical and SEE stresses are now being combined to evaluate the impact on electrical parameter derating, and useful lifetime.
DW-24
Angular and Energy Dependence of Heavy Ion Induced SEE in Commercial EPC eGaN Power Transistors
P. Maloney1, A. Billa1, B. Bolton1, S. Hankinson1, H. Gingold1, S. Shorina1, D. Fleetwood2, E. Zhang1
1. University of Central Florida, USA 2. Vanderbilt University, USA
This paper reports angular heavy-ion single-event effects in commercial EPC enhancement-mode GaN power HEMTs, including SELC and SEB thresholds, based primarily on Xe irradiation at 16 and 20 MeV, with supporting Ag and Cu data.
DW-25
Analysis of Heavy-Ion-Induced Current Waveforms in Si and SiC 1200 V Power Devices
S. Taniguchi1, H. Nakamoto1, J. Furuta2, R. Nakajima1, A. Matsumoto1, S. Onoda3, K. Kobayashi1
1. Kyoto Institute of Technology, Japan 2. Okayama Prefectural University, Japan 3. National Institutes for Quantum Science and Technology, Japan
We measured heavy-ion-induced current waveforms of 1200 V Si and SiC devices to investigate Single Event Burnout mechanisms. The study evaluates the impact of material properties and structural differences on the failure process.
DW-26
Total Ionizing Dose and Single Event Effects Results of the VPT Components 2N7561, 2N7555 and 2N7556 Power MOSFETs
P. Benedetto1
1. Arizona State University, USA
This paper shows the radiation results of the VPT Components RAD7234 die family of n- channel MOSFETs fabricated at LA Semiconductor, designed to be radiation-hardened to 100krad(Si) and SEE immune to Xe (15 MeV/n beam).
DW-27
Total Ionizing Dose and Class P-Equivalent Reliability Testing of a Commercial-Quality, Plastic-Encapsulated Analog Digital Converter
E. Auden1, A. Wright2, J. Bonsall2, J. Teng2, T. Rodriguez2, N. Sepulveda-Ramos2
1. Los Alamos National Laboratory, USA 2. The Aerospace Corporation, USA
We present results for a commercial-quality, plastic-encapsulated microcircuit (PEM) analog digital converter (ADC) subjected to total ionizing dose (TID) testing and reliability screening commensurate with MIL-STD-38535 class P.
DW-28
TID and Proton SEE Characterization of a COTS Current Sense Amplifier, ADC, and DC- DC Converter
B. Torres-Kulik1, M. Mahmud1, D. Hiemstra1
1. MDA Space, Canada
The total ionizing dose and proton single event effects characterization of a commercial- off-the-shelf current sense amplifier, analog to digital converter, and DC-DC converter is summarized.
DW-29
TID and SEE Evaluation of the MAX22507E Transceiver
J. Cardenas Chavez1, D. Hiemstra2, A. Noguera Cundar1, L. Chen1
1. University of Saskatchewan, Canada 2. MDA Space, Canada
This study evaluated the MAX22507E transceiver for TID and SEE using low-dose rate 60Co radiation and high-energy protons. The transceiver showed TID tolerance up to 80 krad(Si), with functional failure observed due to SEE observed.
DW-30
Guide to the 2025 IEEE Radiation Effects Data Workshop Record
D. Hiemstra1
1. MDA Space, Canada
The 2025 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type or effect.
DW-31
Single Event Upset Characterization of the Versal® AI Engines Using Proton Irradiation
D. Hiemstra1, N. Hu1
1. MDA Space, Canada
Proton induced SEU cross-section of the Versal XCVC1902 AI Engines is presented. Upset rates in the space radiation environment are estimated.
DW-32
Neutrons and > 60 MeV Protons Evaluation of AMD 6nm VersalTM Series Gen 2 Multicore Scalar Processing System (PS)
P. Maillard1
1. AMD, USA
This paper presents the neutrons and proton single-event responses of AMD’s 6nm Versal™ AIE Edge Gen2 multicore scalar processing system (PS) using AMD’s System Validation Tool (SVT) suite. SEU, SEFI, and SEL results are presented.
DW-33L
TID Testing of Integrated Nonlinear Photonic Components Based on Tantala for Aerospace Applications
J. Teng1, K. Chang2, D. Hickstein2, Z. Newman2, D. Carlson2, J. Ocheltree3, A. Little1, G. Tzintzarov1, C. Boone1
1. The Aerospace Corporation, USA 2. Octave Photonics, USA 3. University of Illinois Urbana-Champaign, USA
TID testing of a supercontinuum-generation module and comb-offset stabilization module based on tantala integrated photonics is presented. Minimal degradation suggests these components are suitable for precision-timing and sensing applications in space.
DW-34L
Single Event Burnout in Power MOSFETs induced by Thermal and 1.2-17 MeV Neutrons
M. Cecchetto1, M. Dentan2, I. Slipukhin1, M. Sacristan Barbero3, R. Garcia1, B. Lutz4, A. Colangeli5, E. Atukpor6, S. Moindjie7, D. Munteanu7, J. Autran7
1. CERN, Switzerland 2. CERN and CEA, Switzerland 3. Université de Montpellier – CERN, Switzerland 4. PTB, Germany 5. ENEA, Italy 6. Institut Laue-Langevin, France 7. Université de Rennes, France
Single Event Burnout cross sections in power MOSFETs were characterized using thermal neutrons and monoenergetic neutrons from 1.2 to 17 MeV. Results reveal significant sensitivity in high-voltage devices, highlighting the critical impact of neutron-induced failures.
DW-35L
Overview of BAE Systems 12nm RHBD Storefront Cell Library for ASIC Design
R. Bradford1, R. Brown1, R. Aryee1
1. BAE Systems, USA
BAE Systems’ 12nm Radiation Hardened by Design (RHBD) storefront cell library for Application Specific Integrated Circuits (ASICs) design and fabrication in harsh environments are presented.
DW-36L
TID Response of the Lattice Certus Pro-NX FPGA
X. Garcia-Necochea1, B. Rutherford1, B. Kvech2, A. Vidana3, N. Dodds3
1. University of New Mexico COSMIAC, USA 2. AeroVironment, USA 3. Sandia National Laboratories, USA
We present the most comprehensive TID dataset to date on the 28-nm FDSOI Lattice CertusPro-NX FPGA. Both Co-60 and 10 keV X-ray data are presented. Differences in response are attributed to dose enhancement effects.
DW-37L
Total-Ionizing-Dose Response of 3.3 kV SiC MOSFETs for High-Voltage Power Applications
F. Naveed1, Y. Zhao1, A. Hassan1, J. Dix1
1. University of Arkansas, USA
The total-ionizing-dose response of 3.3 kV SiC MOSFETs was studied up to 2 Mrad(Si). Results show that leakage remains low, while capacitance-ratio degradation and threshold shifts reduce switching-relevant gate-drive margin.
DW-38L
Matched-Dose Evaluation of 1200 V Gen-3 SiC MOSFETs Under Total Ionizing Dose Exposure
F. Naveed1, J. Dix1
1. University of Arkansas, USA
This work compares the matched-dose TID response of two commercial 1200 V Gen-3 SiC MOSFETs. The study evaluates threshold shift, conduction response, annealing recovery, leakage stability, capacitance behavior, and hard-switching FOM after 2 Mrad(Si) exposure.
DW-39L
Design of a Fast Crowbar Protection Circuit for Single Event Effect Testing
C. Burt1, N. Dodds1, J. D’Amico1, T. Aldaz1, J. Van Grinsven1
1. Sandia National Laboratories, USA
We describe the design of a custom crowbar circuit that quickly removes power when a programmable current threshold is exceeded. This protects devices from permanent damage during single event latchup/burnout tests.
DW-40L
Compendium of Single-Event Effects Test Results for Candidate Electronics at NASA Johnson Space Center from 2025
B. Dean1, R. Rinderknecht2, S. Martinez1, K. Nguyen1, E. Agarwal1, D. Guinn1, J. Pritts1, B. Reddell3, R. Gaza3
1. Amentum, USA 2. CACI International Inc., USA 3. NASA Johnson Space Center, USA
Single-event effect (SEE) test results produced by NASA JSC in 2025 for electronic components and devices, including memories, processors, integrated circuits, and other parts, are presented. Test environments include heavy ions and protons.
DW-41L
SEE and TID Characterization of a Radiation-Hardened 100V N-channel GaN transistor
E. Reich1, M. Cano1, E. Faraci1, G. Gopalakrishnan1
1. IR HiRel, Infineon, USA
Heavy-Ion SEE and TID radiation characterization was performed on the IR HiRel IG1N10T052 radiation-hardened 100-volt N-channel GaN transistor. Device was shown to be suitable for operation in space radiation environments.
DW-42L
TID and Heavy-Ion SEE Characterization of a Radiation Hardened 17.1 V Buck Controller with Integrated Gate Drivers (RIC70847)
M. Cano1, G. Gopalakrishnan1, E. Faraci1
1. IR HiRel, Infineon, USA
Heavy-Ion SEE and TID radiation characterization were performed on the IR HiRel RIC70847 17.1 V Buck Controller with Integrated Gate Drivers. Device was shown to be suitable for operation in radiation environments, such as space.
DW-43L
Radiation Tolerance of Cremat Radiation Detectors Charge Sensitive Preamplifiers and Shaping Amplifiers
S. Nowicki1, S. Wender1, S. Tyler1, K. Mckeown1
1. Los Alamos National Laboratory, USA
We developed a diamond detector readout system and report gamma irradiation results for its charge-sensitive preamplifier and shaping amplifier, along with a method to maintain component bias during irradiation.
DW-44L
SEE Characterization of a Commercial-Off-the-Shelf ADC, Transceiver, and Voltage Reference Under Heavy Ion and Proton Irradiation
M. Mahmud1, B. Torres-Kulik1, D. Hiemstra1
1. MDA Space, Canada
A commercial-off-the-Shelf analog to digital converter (ADS8354IPWR), Transceiver (SN65176BDRG4), and Voltage reference (ISL21010DFH310Z-T7A) were subjected to proton irradiation and heavy ion exposure to characterize their susceptibility to Single Event Effect (SEE).