The HEARTS EU Project and Its Initial Results on Fragmented High- Energy Heavy Ion Single-Event Effects Testing

R. Garcia Alia¹, A. Waets¹, A. Coronetti¹, K. Bilko¹, M. Derlieux¹, N. Emriskova¹, L. Esposito¹, M. Fraser¹, E. Johnson¹, K. Klimek¹, D. Prelipcean¹, M. Sacristan Barbero¹, S. Danzeca¹, Ravotti¹, S. Gilardoni¹, F. Cerutti¹, M. Durante², C. Schuy², T. Wagner², U. Weber², Bagatin³, S. Gerardin³, S. Francola⁴, R. Mancini⁴, M. Rostewitz⁵

1. CERN, Switzerland

5. TESAT, Germany

We perform SEE tests with well-characterized fragmented high-energy heavy-ion beams and compare the results with those expected from conventional, mono-LET measurements, showing a satisfactory agreement between the two, and paving the way to RHA exploitation.

A Rapid, Pulsed Laser Testing Approach for Single-Event Latchup Screening in Microelectronics

L. Andrus¹, J. Warner², W. Rice², A. Le², C. Saltonstall¹

1. Sandia National Laboratories, USA

2. Northrop Grumman, USA

A laser testing system for rapid screening of single-event latchup in microelectronics with real-time visualization of SEL sensitive nodes via photo-emission is presented.

A Parallelized Neutron Radiation Testing Technique to Understand Failures Within a Complex SoC

N. Harris¹, W. Smith¹, M. Wirthlin¹, J. Goeders¹

1. Brigham Young University, USA

This work presents a methodology for testing multiple components of a system-on- chip (SoC) device, focusing on simultaneous testing of multiple components. Results are included for two neutron beam tests.

Design and Characterization of a Radiation Tolerant Wireless Physical Layer for Control Applications in Particle Accelerators

A. Scialdone¹, R. Ferraro¹, J. Boch², F. Saigné², L. Dilillo², S. Danzeca¹, A. Masi¹

1. CERN, Switzerland

2. Université de Montpellier, France 

The article explores the design and the evaluation of a wireless physical layer (PHY) capable of withstanding radiations, specificallytailored for equipment control in harsh radiation environments, such as those found in particle accelerators.

Electron Beam Dosimetry for Space Solar Cell Radiation Qualifications

S. Messenger¹, S. Witczak¹, J. Warner¹

1. Northrop Grumman Corporation (NGC), USA

The implications of common dosimetry methods used in electron beam irradiations for solar cell space qualifications are investigated. Monte Carlo simulations show that ionizing dosimetry can lead to an underestimation of the desired electron fluence.

Characterization of Fully Fragmented High-Energy Heavy Ion Beams for SEE Testing Through Measurements and Simulations

A. Waets¹, R. Garcia Alia¹, N. Emriskova¹, L. Salvatore Esposito¹, K. Bilko²

1. European Organization for Nuclear Research (CERN), Switzerland

2. Université Jean Monnet, France

We performed dosimetry of fully fragmented, very-high-energy heavy ion beams for SEE testing using solid state detector measurements and detailed Monte Carlo FLUKA simulations focusing on the interaction between beam and device-under-test.

Sensitivity Enhancement of Tapered Cerium-Doped Optical Fibers for Dosimetry Applications

F. Fricano¹, R. Vallifuoco², D. Lambert³, A. Morana¹, P. Paillet³, H. El Hamzaoui⁴, B. Capoen⁴, M. Bouazaoui⁴, E. Marin¹, E. Catalano², A. Minardo², Y. Ouerdane¹, A. Boukenter¹, S. Girard¹

1. Laboratoire Hubert Curien, Université de Saint Etienne, France

4. Université de Lille, France

We compared radiation-induced luminescence in cerium-doped optical fiber and its tapered versions, having different sensitive volumes. It is proved the radiation sensitivity increases when decreasing core size, advancing microscale fiber-based dosimetry.

Temperature Dependence of the Radiation Response of Ultra-Low Loss Optical Fibers: Role of Self-Trapped Holes

M. Roche¹, C. Campanella¹, A. Morana¹, V. De Michele¹, E. Marin¹, A. Boukenter¹, Y. Ouerdane¹, J. Mekki², S. Girard¹

1. Université Jean Monnet de Saint-Etienne, Laboratoire Hubert Curien, France

2. CNES, France

We investigated the temperature (-60 °C, 20 °C 100 °C) dependence of the X-ray radiation induced attenuation, in the visible to infrared spectral domain, of an ultra- low loss pure silica core single mode optical fiber.

Total-Ionizing-Dose Effects in Integrated Silicon Photonics Mach-Zehnder Modulators Using Localized X-Ray Pulses

M. Hosseinzadeh¹, J. Teng¹, B. Ringel¹, P. Francis¹, J. Heimerl¹, G. Tzintzarov², A. Little²,

1. Bonsall², S. Lalumondiere², D. Monahan², J. Cressler¹

3. The Aerospace Corporation, USA

Silicon-photonic MZMs were exposed to a microbeam X-ray source, revealing three distinct TID effects in the phase shifter.Derivations and potential physical mechanisms underlying these effects are discussed.

Displacement Damage and Ionization Effects on Waveguide-Integrated Germanium-Silicon PIN Photodiodes

K. Arnold¹, H. Dattilo¹, E. Zhang², M. McCurdy¹, S. Musibau³, M. Berciano⁴, A. Tsiara⁴, D. Linten⁴, K. Croes⁴, J. Van Campenhout⁴, R. Schrimpf¹, D. Fleetwood¹, R. Reed¹, S. Weiss¹

1. Vanderbilt University, USA

4. imec, Belgium

Effects of configuration on germanium-silicon photodiode performance under 1.8- MeV proton and 10-keV X-ray irradiation are studied. Modest operating dark current increases up to 35 nA result from nonradiative defect center generation and ionization- induced traps.

Proton Radiation Effects on Low Flux P-on-N Short Wavelength Infrared HgCdTe Focal Plane Array

T. Friess^1,2,3,4, T. Pichon⁵, T. Le Goff¹, M. Baumann⁵, L. Provost⁵, C. Koumeir⁶, A. Rouvie⁴, O. Boulade⁵, A. Le Roch², V. Goiffon², S. Rizzolo³, O. Gravrand¹

1. CEA Leti, France

6. Arronax Nantes, France

Dark current estimates have been made on a very low flux short wave infra-red (SWIR) HgCdTe detector for astronomical purposes.Degradations were observed pixel to pixel following proton irradiation.

Radiation Effects in Quanta Image Sensors

J. Krynski¹, A. Neyret¹, V. Bernard², V. Lalucaa², A. Materne², A. Le Roch¹, C. Virmontois², V. Goiffon¹

1. ISAE-SUPAERO, France

2. CNES, France

 We study the impact of radiation on a quanta image sensor. We find dark current increases linearly with proton fluence and we extend an empirical model of predicting dark current increase to this new technology.

Displacement Damage Effects on Hole Collection P-Type Deep-Trench Pinned Photo-MOS Pixels

A. Antonsanti¹, V. Malherbe², A. Le Roch¹, L. Ryder³, P. Roche², A. Tournier², C. Virmontois⁴, J. Lauenstein³, V. Goiffon¹

1. ISAE-SUPAERO, France

4. CNES, France

This work studies displacement damage effects in P-type, hole collecting photogates, developed by STMicroelectronics after proton irradiation. The focus is made on radiation induced dark current and dark current random telegraph signal.

Displacement Damage Effects on a CDTI based CCD-on-CMOS: Dark Current and Charge Transfer Inefficiency

A. Salih Alj^1,2,3, A. Antonsanti¹, A. Le Roch¹, P. Touron³, F. Roy³, A. Tournier³, S. Demiguel⁴, C. Virmontois², V. Lalucaa², J. Michelot⁵, P. Magnan¹, V. Goiffon¹

1. ISAE-SUPAERO

5. Pyxalis, France

 Displacement damage effects induced by proton and neutron irradiation are explored in a capacitive deep trench CCD-on-CMOS image sensor. Dark current and charge transfer inefficiency are studied to reveal the generation and capture-release trap signatures.