7:00 AM

Trillium Ballroom

Breakfast

INVITED TALK

8:15 AM – 9:15 AM

Ottawa Salon

SESSION E

Ottawa Salon

9:15 AM

E-1

9:20 AM

11:20 AM

11:25 AM – 1:15 PM

CANADA HALL 1 & 2

1:15 PM – 4:00 PM

PB-1 Single-Event Degradation and Failure of a Multi-Die, SiC MOSFET Module for Deep Space Applications

J. Kozak¹, C. Pham¹, J. Likar¹, S. Katz¹, J. Oarethu¹, J. Neville¹

1. Johns Hopkins University Applied Physics Laboratory, USA

Multi-chip, SiC MOSFET modules were subjected to Heavy Ion stressors under varying gate and drain voltages as well as temperature conditions. Tests were conducted at multiple beam facilities.

PB-2 A Comparative Analysis of Radiation Tolerance in Charge-Trap and Floating-Gate 3D NAND Memory Technologies

M. Kumar¹, M. Buddhanoy¹, B. Ray¹

1. Colorado State University, USA

Floating-gate 3D NAND technology is found to be more sensitive to total-ionizing- dose effects than charge-trap counterparts under identical irradiation conditions. The surrounding dielectric region of floating-gate cell may explain its higher sensitivity.

PB-3 Context-Dependent Outlier Detection Technique for Analysis of Single- Event Frequency Transients in LC Oscillators

W. Rombouts¹, P. Karsmakers¹, G. Adom-Bamfi¹, S. Biereigel², J. Prinzie¹

1. KU Leuven, Belgium
2. CERN, Switzerland

Channeltron detector non-idealities introduce anomalies in measured data of LC oscillators. We propose a context-dependent anomaly removal methodology using machine learning techniques. Results demonstrate improved data consistency, ensuring reliable analysis in radiation sensitivity studies.

PB-4 Statistical Analysis of Historical SEL Test Data to Provide A Priori Risk Estimates for Use of Unhardened CMOS Parts

R. Ladbury¹, G. Allen², F. Irom², R. Gaza³, S. Vartanian², J. Barth¹, R. Hodson4

1.NASA Goddard Space Flight Center, USA
2.NASA Jet Propulsion Laboratory, USA
3.NASA Johnson Space Center, USA
4.NASA Langley Research Center, USA

We develop guidelines for a priori assessment of risk due to potentially SEL susceptible parts by exploratory analysis of large datasets of SEE test data for unhardened CMOS parts.

PB-5 Evaluating System-Level Radiation Hardness with Minimum Order Distributions

C. Champagne¹, B. Sierawski¹

1. Vanderbilt University, USA

A probabilistic framework for system-level TID and displacement damage hardness assurance is developed using order statistics. Piece part failure distributions inform system-level failure distributions for series configurations, achieving confidence- bounded failure probabilities in variable space environments.

PB-6 Analysis of System Radiation Effects Using Markov Chains

D. Hansen¹, T. Manich¹, I. Zavatkay¹

1. L3Harris, USA

This paper describes methods for using Markov chains to perform single-event upset analysis for satellite systems. The discussion includes methods to calculate the hitting time for failure states in the system.

PC-1 14 MeV and Atmospheric Neutron Monitoring Through Optical Fiber Dosimeters

M. Roche¹, D. Lambert², L. Weninger¹, A. Morana¹, N. Kerboub³, C. Bélanger-Champagne4, H. Cornelia4, M. Trinczek4, E.Marin¹, A. Boukenter¹, Y. Ouerdane¹, P. Paillet², J. Mekki³, T. Robin5, S. Girard¹

1. Laboratoire Hubert Curien, Université de Saint Etienne, France
2.CEA, France
3.CNES, France
4.TRIUMF, Canada
5.EXAIL, France

Radiation-induced attenuation-based dosimetry exploiting phosphosilicate optical fiber has been established as a reliable and precise dosimetry technique. We evaluate here its potential to monitor 14-MeV and atmospheric neutrons by combiningradiation tests with Geant4 simulations.

PC-2 Using Quasi-Monoenergetic Neutrons From a 30-MeV Proton Beam for Single-Event Effects Studies

Y. Chiang¹, H-M. Lee², K-Y. Chu², Y-H. Teng²

1.Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan
2.National Atomic Research Institute, Taiwan

A new facility that generates quasi-monoenergetic neutrons from a 30-MeV proton beam hitting Be target is presented for evaluating SE response to terrestrial neutrons. Results show agreement with LANSCE facility for a 16 nm process.

PC-3 Scan-Based Radiation Testing Using SRAM Dosimeters for Device and Beam Characterization

S. Khan¹, D. Eom¹, J. Kim¹, S. Chung¹, J. Kih¹, S. Woo¹, C. Cho¹, K. Kim¹, S. Wender²

1.QRT Inc., Republic of Korea
2.Los Alamos National Laboratory (LANL), USA

We performed single-event effects (SEE) tests by scanning a SRAM-based dosimeter in discrete steps along horizontal and vertical directions in the beamline for beam and device characterization to measure beam profile and intrinsic sensitivity.

PD-1 Radiation Assessment of a 56 Gbps Electro-Absorption Modulator Driver for Optical Intra-Satellite Links

K. De Bruyn¹, A. Karmakar¹, M. Vanhoecke², L. Bogaert³, G. Roelkens³, A. Naughton4, D. Mackey4, J. Prinzie5, P. Leroux5, J.Bauwelinck¹

1. Ghent University – imec, Belgium
2. NVIDIA Ghent, Belgium
3. Ghent University, Belgium
4. mbryonics, Ireland
5. KU Leuven, Belgium

A 130 nm SiGe BiCMOS radiation hardened by process 56 Gbps electro-absorption modulator driver chip is proposed for optical intra-satellite links. The total ionizing dose and single-event effects responses are presented.

PD-2 Radiation Hardness of Silicon Avalanche Photodiodes Used in Space Applications

P. Berard¹, J.-F. Germain¹, M. Couture¹, F. Belfio², N. Kerff², N. Sasseville-Langelier², A. Touville², E. Tremblay², M. Chicoine³,L. Martinu², F. Schiettekatte³

1.Excelitas Canada Inc., Canada
2. École Polytechnique de Montréal, Canada
3. Université de Montréal, Canada

Silicon avalanche photodiodes of different structures, sizes, and thicknesses were exposed to protons of various energies and fluences. Impact on parameters, with emphasis on bulk noise, are presented and discussed.

PE-1 Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

A. Vidana¹, N. A. Dodds¹, N. Nowlin¹, P. Oldiges¹, K. Sapkota¹, T. Wallace¹, J. Kauppila², L. Massengill², H. Barnaby³

1.Sandia National Laboratories, USA
2.Reliable MicroSystems, LLC, USA
3.Arizona State University, USA

We compare the measured TID responses of GlobalFoundries 12LP and 12LP+ 12nm FinFET technologies. Differences in their TID response are attributed to certain expected differences between the physical parameters of these two processes.

PE-2 Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits from a 65 nm Partially Depleted SOI Technology
 
J. Lomonaco¹, N. Rostand¹, S. Martinie², G. Charbonnier¹, C. Marcandella¹, T. Bedecarrats², A. Bournel³

1.CEA DAM DIF, France
2.CEA-LETI, France
3.Université Paris-Saclay, France

The degradation induced by ionizing dose is characterized in partially depleted SOI voltage reference circuits: a fully depleted-like behavior is evidenced. The front and back interface coupling is confirmed through characterization and TCADsimulations.

PE-3 Comparison of Total Ionizing Dose Effects Between Double and Conventional SOI Devices

S. Chen¹, J. Li¹, F. Liu¹, B. Li¹, Y. Wang¹, H. Zhu¹, Y. Huang¹, D. Li¹, F. Wang¹, Y. Zhang¹, J. Wang¹, B. Sun¹, Y. Zhang¹, W. Lu¹, J.Wan², Y. Xu³, B. Li¹, T. Ye¹

1.Chinese Academy of Sciences, China
2.Fudan University, China
3.Nanjing University of Posts and Telecommunications, China

The total ionizing dose (TID) responses are experimentally compared between double silicon-on-insulator (DSOI) and SOIdevices. Higher threshold voltage shift is observed in DSOI, which is attributed to defects generated in the second buried oxide.

PE-4 Heavy Ion-Induced Microdose Effects on the Reliability of Planar and FinFET-Based SRAM Physical Unclonable Functions

J. Shao¹, Y. Wang¹, R. Song¹, S. Li¹, Y. Guo¹, Y. Chi¹, B. Liang¹, J. Chen¹

1. National University of Defense Technology, China

Planar bulk, FD-SOI and FinFET-based SRAM PUFs are irradiated by heavy ions. 3%-10% of SRAM bits change fromtheir original power-on states. Experimental results demonstrate that ion-induced microdose effects degrade the PUF’s reliability.

PE-5 Total Ionizing Dose Effects in Oxide Based ECRAM

R. Faruque¹, C. Bennett², S. Oh³, B. Zutter³, M. Siath¹, J. Neuendank¹, M. Spear¹, T. P. Xiao², D. Hughart², S. Agarwal³, H.Barnaby¹, Y. Li⁴, A. Talin³, M. Marinella¹

1. Arizona State University, USA
2. Sandia National Laboratories, NM, USA
3. Sandia National Laboratories, CA, USA
4. University of Michigan, USA

Total ionizing dose (TID) effect on oxide based ECRAMs (VOx and TaOx) is characterized experimentally using a Co-60 source. VOx ECRAM exhibited moderate resistance decrease with increased dose, whereas TaOx ECRAM resistance did not change significantly.

PE-6 Investigation of DC/RF Performances Degradations on 200 nm Gate Length GaN-on-Si RF MIS-HEMTs Under Gamma Radiation

A. Johari^1,2, C. Su¹, M. Tsai¹, D. Chao³, A. Gupta², R. Singh², T. Wu¹

1.National Yang Ming Chiao Tung University, Taiwan
2.Indian Institute of Technology Delhi, India
3.National Tsing Hua University, Taiwan

This study investigates the impact of 25 kGy gamma radiation on fabricated 200 nm gate length GaN-on-Si RF MIS-HEMT for space applications. The experimental findings confirm excellent electrical stability with radiation hardness in GaN-on-Si MIS-HEMT.

PF-1 Evaluating the Contribution of Terrestrial Radiation Sources to a Quantum Device Error Rate

G. Casagranda¹, F. Vella¹, P. Rech¹

1. University of Trento, Italy

Through GEANT4 simulations we compare the effect of neutrons, alphas, muons, and gammas in a quantum device. We combine non-equilibrium generation probability with natural flux to identify the most harmful radiation source for qubits.

PF-2 Implications of an ARC-DPA 1-MeV Equivalent Neutron Fluence Metric for GaAs

N. Asper¹

1. Sandia National Laboratories, USA

An ARC-DPA function was fitted to the GaAs data used in the development of the ASTM E722 1-MeV equivalent neutron fluence standard. The new functional form suggests that the current standard significantly underestimates displacement damage.

PF-3 A Defect-Aware Device Model Realized: A Case Study in GaAs

L. Diaz¹, H. Hjalmarson¹, J. Lutz¹, P. Schultz¹

1. Sandia National Laboratories, USA

Fermi level shifting and defect-defect reactions in irradiated Si-doped GaAs are explored within a novel defect-aware device model. The approach uses atomistically computed defect properties as input parameters within the device model.

PF-4 Analysis of Impact of Gate Bias and Oxide Thickness on Base Current in Post-Rad Gate LPNP BJTs

L. Ho¹, A. Benedetto¹, X. Gao², J. Young², S. Banerjee², L. Musson², H. Barnaby¹, T. Buchheit², M. Campola³

1.Arizona State University, USA
2.Sandia National Laboratories, USA
3.NASA GSFC, USA

Space flight data on GLPNP BJTs with different gate oxide thicknesses are analyzed. Results suggest mechanisms for different base current responses are not explained by the expected dependence of radiation-induced defect buildup on thickness.

PF-5 High Temperature and Total Ionization Dose Synergetic Effect of Top-Gate CNT FET

C. Yang¹, P. Lu¹, D. Zhang¹, H. Ma¹, X. Li¹, K. Wang¹, J. Bu¹, Z. Han¹, B. Li¹

1. Institute of Microelectronics, Chinese Academy of Sciences; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

High temperature and total ionization dose synergetic effect of top-gate CNT FET has been studied experimentally. Worst operating state is determined by comparative experiments, and high-temperature and TID irradiation is conducted and analyzed.

PG-1 Impact of FEOL and BEOL Parameters on SEEs in 7nm, 5nm, and 3nm Bulk FinFET Technologies

C. Nunez Sanchez¹, Y. Xiong¹, N. Pieper¹, J. Kronenberg¹, D. Ball¹, B. Bhuva¹

1. Vanderbilt University, USA

SEU cross-sections show a strong dependence on technology node (7/5nm FinFET) and Vt variant. Analysis indicates that the FinFET geometry does not affect charge collection; the circuit-level parameters are responsible for the SEU differences.

PG-2 Best-Fit Techniques to Estimate SBU/MCU Cross Sections from Radiation-Ground Tests in Memories

F. Franco¹, J. Fabero¹, H. Mecha¹, M. Rezaei¹, J. Clemente¹

1. Universidad Complutense de Madrid, Spain

In a radiation-ground test on a memory device with a sufficient amount of rounds of reading and bitflips per round, two best-fit approaches are proposed to estimate its SBU/MCU cross sections.

PG-3 Analysis of Gate-Source Damage Induced by Heavy Ion at High Drain Bias in SiC power MOSFET

L. Qiu¹, Y. Bai¹, J. Ding², X. Liu¹

1.  Institute of Microelectronics of the Chinese Academy of Sciences, China
2.  The State Key Laboratory of Advance Power Semiconductor Device, Zhuzhou CRRC Times Semiconductor Company Ltd., China

A failure induced by heavy-ion impact at high drain bias uncovered a leakage path existing between the gate and source in SiC power MOSFETs, which was correlated with damages to the polysilicon gate and oxide.

PG-4 Proton Energy Dependence of SiC Power MOSFET Single-Event Burnout Sensitivity

K. Niskanen¹, A. Javanainen¹, H. Kettunen¹, C. Martinella², W. Hajdas³

1.University of Jyväskylä, Finland
2.APS Laboratory – ETH Zurich, Switzerland
3.Paul Scherrer Institute, Switzerland

The proton energy dependence on single-event burnout (SEB) sensitivity of silicon carbide power MOSFETs is studied. The results show that the SEB is dependent on the primary proton energy and drain voltage during irradiation.

PG-5 Experimental Evidence of the Role of the Parasitic Bipolar Transistor in Neutron-Induced Single-Event Burnout in Si and SiC Power MOSFETs

F. Principato¹, C. Cazzaniga², C. Frost³, M. Kastriotou², F. Pintacuda⁴

1. Dipartimento Fisica e Chimica-Palermo University, Italy
2. STFC, United Kingdom
3. ISIS Neutron and Muon Facility, United Kingdom
4. STMicroelectronics, Italy

Accelerated single-event burnout (SEB) tests with atmospheric neutrons were performed for power MOSFETs and for modified structures of these devices to study the impact of the parasitic bipolar transistor of the MOSFET.

PH-1 Charge Trap Layer Supercharging for Improved Bit Reliability in 3D NAND Flash Under Proton Irradiation

A. Teijeiro¹, M. Breeding¹, J. Young¹, E. Wilcox², D. Hughart¹

1. Sandia National Laboratories, USA

2. NASA Goddard Space Flight Center, USA

Multiple write cycles were observed to harden bits against single-event upset in 176L 3D NAND Flash under proton irradiation. Cross sections monotonically decreased in single level cell operations with additional writes.

PH-2 RIERA: Redundancy Insertion Automation and Optimization for Large-Scale RTL Designs

O. Atli¹, P. Mohan¹, M. King², K. Mai¹

1. Carnegie Mellon University, USA

2. Intel Corporation, USA

 We introduce RIERA, a toolset that can automatically insert common redundancy schemes into different modules and instances in an RTL design as well as iteratively pick the optimal redundancy assignment for each design element.

PH-3 Impact of Latch Interleaving on DICE Flip-Flop SEU Rates at the 12-nm FinFET Node

C. Elash¹, P. Pour Momen¹, J. Xing¹, R. Chen¹, D. Lambert¹, J. Cardenas¹, Z. Li¹, R. Fung², S. Wen³, L. Chen¹

1. University of Saskatchewan, Canada

2. Cisco, USA

3. Cisco, USA

DICE Flip-Flops with sensitive node interleaving are designed and tested with a 12-nm FinFET node. Heavy ion testing shows that DICE with proper layout arrangement can significantly reduce SEU, are sensitive to angled ion strikes.

PH-4 Update on the Development and Test of a Radiation Tolerant Power Supply for LHC’s Quench Detection System

J. Steckert¹, T. Pridii¹, R. Denz¹, A. Hollos¹, G. Martin Garcia¹, T. Podzorny¹, J. Spasic¹

1. CERN, Switzerland

Design and test of a linear regulated AC-DC power supply for the quench detection system of LHC. Based on operational amplifiers, voltage references and MOSFETs prototypes were tested in CERN’s CHARM radiation test facility.

PI-1 Real-Time SER Measurements of CMOS Bulk 40 nm and 65 nm SRAMs Combined with Neutron Spectrometry at the JET Tokamak During D-D and D-T Plasma Operation

M. Dentan^1,3, S. Moindjie², M. Cecchetto³, J. Autran^2,4, R. Garcia Alia³, R. Naish⁵, J. Waterhouse⁵, A. Horton⁵, X. Litaudon¹, D. Munteanu², J. Bucalossi¹, P. Moreau¹, V. Malherbe⁶, P. Roche⁶, D. Rastelli⁷

1. CEA-IRFM, France

2. Aix-Marseille University, France

3. CERN, Switzerland

4. University of Rennes, France

5. UK Atomic Energy Authority, United Kingdom

6. STMicroelectronics, France

7. Raylab s.r.l., Italy

We performed SER characterization of decananometer SRAMs combined with neutron spectrometry in the deuterium-tritium-fueled JET tokamak, demonstrating the impact of machine operation on the reliability of electronics in conditions approaching those of future fusion reactors.

PI-2 Processor Cache Validation Under Neutron Radiation Testing

N. Harris¹, J. Goeders¹, M. Wirthlin¹

1. Brigham Young University, USA

 This work reviews three approaches for measuring the cross-section of processor caches. These approaches were tested for multiple caches on the Zynq MPSoC at LANSCE and ChipIR.

PI-3 Complex Single Event Effects Behaviour in Nanometric Commercial Static Random Access Memories

M. Barker¹, K. Ryden¹

1. University of Surrey, United Kingdom

 This paper provides a summary of micro-SELs and non-linear SEU behavior affecting significant clusters of SRAM cells observed during both neutron and proton SEE testing. A new characterization of micro-SEL types is proposed.

PI-4 Multicell Upsets in Flip-Flops at Advanced FinFET Nodes

N. Pieper¹, Y. Xiong¹, J. Kronenberg¹, C. Nunez Sanchez¹, M. Delaney¹, D. Ball¹, M. Casey², R. Fung³, B. Bhuva¹

1. Vanderbilt University, USA

2. NASA, USA

3. Cisco, USA

Multiple-cell upsets (MCUs) are observed in flip-flops in 5-nm and 3-nm FinFET technologies. Primary factors responsible for increased MCU vulnerability include cell spacing and threshold voltage options.

PI-5 Effects of Total-Ionizing-Dose Irradiation on Neutron-induced Single- Event Burnout for SiC Power MOSFET

X. Li¹, X. Wang¹, Z. Qiwen¹, C. Jiangwei¹, Y. Li¹, W. Lu¹, Q. Guo¹

1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Science, China

We investigate the effect of total ionizing dose (TID) on neutron-induced single-event burnout (SEB) for SiC MOSFETs. The results demonstrate that the synergistic effect of TID on SEB for SiC devices does in fact exist.

PI-6 The Influence of the Ion Incidence Angle on the Single-Event Upset of the D Flip-Flop in the Multi-Fin FinFET Process

Y. Gao¹, Y. Chi¹, Q. Sun¹

1. National University of Defense Technology, China

 The nonmonotonic relationship of SEU susceptibility and heavy-ion incidence angle is observed and analyzed for the Data Flip-Flop in the multi-fin FinFET process for the first time, which is totally different in conventional bulk-silicon process.

PI-7 Atmospheric Neutron Single Event Effect on a Non-von Neumann AI Chip

W. Yang¹

1. Xidian University, China

 This paper assesses SEEs on a non-von Neumann AI Chip. Results from spallation neutron irradiation, fault injection,and fault tree analysis reveal the chip’s vulnerability to SEE while YOLOV5 execution.

PI-8 Study on Single Event Burnout in 4H-SiC Schottky Diodes

Z. Wang¹, R. Chen¹, Y. Liang¹, J. Han¹, Q. Chen¹, S. Shangguan¹

1. National Space Science Center Chinese Academy of Sciences, China

A “step current” is observed when the reverse current of the 4H-SiC SBD increases under irradiation. The SEB process has avalanche amplification and recombination, and the “step” trend emerges when the two achieve dynamic equilibrium.

PI-9 Soft Error Detection and Execution Observation for ARM Microprocessors

M. Pena Fernandez¹, B. Verdasco¹, L. Entrena², A. Lindoso²

1. Arquimea Group A., Spain

2. University Carlos III Madrid, Spain

We present an IP to detect errors and observe the behavior of ARM architectures using the information provided by the trace interface. Experimental results with heavy ions demonstrate the high capabilities of the proposed IP.

PI-10 Soft-Error Reliability Analysis and Error Rate Estimation for RISC-V Processors in High Energy Physics Environments

A. Nookala¹, J. Prinzie², R. Pejasinovic¹, A. Lauridsen¹, K. Kloukinas¹, A. Jantsch³, M. Andorno¹, A. Caratelli¹

1. CERN, Switzerland

2. KU Leuven, Belgium

3. TU Wien, Austria

Micro-processor ASICs are unproven for flux rates of high energy physics detector environments. We present the reliability analysis, by simulation-based fault injection, of a RISC-V micro-processor against expected single-event upset rates encountered in CERN on-detector systems.