Total Ionizing Dose Effects in 3D NAND Replacement Gate Flash Memory Cells

S. Gerardin¹, M. Bagatin¹, A. Paccagnella¹, S. Beltrami², A. Benvenuti², C. Cazzaniga³

1. University of Padova, Italy

2. Micron Technology, Italy

3. STFC, United Kingdom

Total ionizing dose effects in 3D NAND flash memories with replacement gate technology are evaluated. Threshold voltage shifts, underlying mechanisms, and bit error rates are studied and compared with 3D cells with floating gate technology.

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

S. Bonaldo¹, T. Wallace², H. Barnaby², G. Borghello³, G. Termo³, F. Faccio³, D. Fleetwood⁴, A. Baschirotto⁵, S. Mattiazzo¹, M. Bagatin¹, A. Paccagnella¹, S. Gerardin⁶

1. University of Padova, Italy

2. Arizona State University, USA

3. CERN, Switzerland

4. Vanderbilt University, USA

5. University of Milano Bicocca, Italy

6. DEI – Padova University, Italy

TID mechanisms in Si FinFETs are investigated through DC measurements and TCAD simulations. Results show that transconductance degradation and leakage current increase due to non-uniform generation of trapped charges in STI.

Ion-Induced Stuck Bits in 5-nm bulk FinFET SRAMs at High Fluences

Y. Xiong¹, N. Pieper¹, N. Dodds², G. Vizkelethy², N. Nowlin², B. Bhuva¹

1. Vanderbilt University, USA

2. Sandia National Laboratories, USA

Experiments were performed to search for single-ion-induced displacement damage effects in 5-nm FinFET SRAM arrays. Stuck bits were observed that are consistent with cumulative displacement damage effects and inconsistent with other possible failure mechanisms.

1. Vanderbilt University, USA

2. Sandia National Laboratories, USA

Experiments were performed to search for single-ion-induced displacement damage effects in 5-nm FinFET SRAM arrays. Stuck bits were observed that are consistent with cumulative displacement damage effects and inconsistent with other possible failure mechanisms.

Depth Dependence of Neutron-induced Errors in 3D NAND Floating Gate Cells

S. Gerardin¹, M. Bagatin¹, A. Paccagnella¹, S. Beltrami², C. Cazzaniga³

1. DEI – University of Padova, Italy

2. Micron Technology, Italy

3. STFC, United Kingdom

The sensitivity of vertical-channel 3D NAND Flash memories to wide-energy spectrum neutrons is investigated, through experiments and simulations, as a function of cell depth in the pillars.

Single-Event Burnout in Vertical PtOx/β-Ga2O3 Schottky Diodes with Extreme-k TiO2 Field Plates

S. Islam¹, A. Senarath¹, D. Ball¹, A. Sengupta¹, E. Zhang¹, D. Fleetwood¹, R. Schrimpf¹, F. Esmat², N. Hendricks², J. Speck²

1. Vanderbilt University, USA

2. University of California, Santa Barbara, USA

Structural and process changes to vertical β-Ga2O3 Schottky diodes enable significantly improved electrical performance. Enhanced resistance to ion-induced burnout is demonstrated via alpha particle and Cf-252 testing.

Single Event Transient in Body Contacted PDSOI Technology: Compact modeling and Statistical Experimental Calibration

N. Rostand¹, D. Lambert¹, O. Duhamel¹, M. Gaillardin¹, M. Raine¹, S. Vigne¹, M. Sall¹, C. Grygiel¹

1. CEA, France

We propose a Single Event Transient compact model for 65nm Body Contacted PDSOI technology along with TCAD analysis and experimental statistical calibration based on the collected charge.

The Contribution of Secondary Alpha Particles to Soft Error Rates in Space Systems

R. Cadena¹, N. Dodds², K. Warren¹, B. Sierawski¹, R. Reed¹, D. Ball¹, R. Schrimpf¹

1. Vanderbilt University, USA

2. Sandia National Laboratories, USA

The importance of including secondary particles in environment simulations is demonstrated by comparing MRED and CREME96 simulations. CREME96 underpredicts the flux of secondary alpha particles, which can cause an artificially low soft error rate calculation.

Effects of Interface Traps on the Low-Frequency Noise of Irradiated MOS Devices

D. Fleetwood¹, E. Zhang¹, R. Schrimpf¹, S. Pantelides¹, S. Bonaldo²

1. Vanderbilt University, USA

2. University of Padova, Italy

Experimental results suggest that interface traps may contribute significantly to the low-frequency noise of some irradiated MOS devices. Hydrogen-induced trap activation and passivation are identified as likely origins of the observed fluctuations.

Neutron Displacement Damage in Bipolar Junction Transistors Isolated from an Integrated Circuit

J. Young¹, T. Ho², S. Banerjee¹, X. Gao¹, L. Musson¹, H. Barnaby², T. Buchheit¹

1. Sandia National Laboratories, USA

2. Arizona State University, USA

Abstract – Lateral pnp and vertical npn transistors were isolated from the LM741 circuit and irradiated with 14 MeV neutrons. TCAD modeling confirms shortened minority lifetime responsible for gain degradation due to displacement damage.

The Effects of Heavy Ion Induced Displacement Damage on WO3-x ECRAM

M. Marinella¹, C. Bennett², B. Zutter², M. Siath¹, G. Vizkelethy², T. Xiao², E. Fuller², D. Hughart², S. Agarwal², Y. Li³, A. Talin¹

1. Arizona State University, USA

2. Sandia National Laboratories, USA

3. University of Michigan, USA

Displacement damage in WO3-x ECRAM is experimentally characterized for the first time. At moderate levels, metal oxide ECRAM does not exhibit significant changes. At high displacement per atom levels, conductivity increases with increasing vacancy concentration.

Analysis of Total Ionizing Dose Effects using Electron Holography

C. Chang¹, H. Barnaby¹, D. Smith¹, M. Mccartney¹, P. Apsangi², K. Muthuseenu³, K. Holbert¹, A. Privat¹, B. Kennedy¹

1. Arizona State University, USA

2. Tower Semiconductor, USA

3. Intel, USA

Electrical characterization and electron holography on metal-oxide-semiconductor devices confirm the presence of net positive oxide charge build-up after total-ionizing dose. Holography also identifies the buildup of net negative charge trapping near oxide-metal interface.

Global Ionizing Radiation Environment Mapping Using Starlink Satellite Data

H. Shah¹, R. Van cleave¹, C. Jeffrey¹, K. Pham¹, Z. Fleetwood¹, S. Shermer¹

1. SpaceX, USA

Global simultaneous spatiotemporal mapping of ionizing radiation environments is provided for the first time on the Starlink satellite fleet utilizing sensor and circuit detection methods.

Radiation environment in the Large Hadron Collider during the 2022 restart and related RHA implications

K. Bilko¹, R. Garcia², Y. Aguiar², S. Danzeca², S. Girard³, M. Sebban³, S. Uznanski²

1. Université Jean Monnet, France

2. CERN, Switzerland

3. Université de Saint Etienne, France

Radiation levels measured in 2022 along the CERN Large Hadron Collider are presented, focusing on the TID comparison with the 2015-2018 years. Measurements from more than 750 SRAMs distributed across the accelerator are discussed.

NAIRAS Atmospheric and Space Radiation Environment Model

C. Mertens¹, G. Gronoff², Y. Zheng³, J. Buhler⁴, E. Willis⁵, M. Petrenko³, D. Phoenix², I. Jun⁶, J. Minow⁵

1. NASA Langley Research Center, USA

2. Science Systems and Applications, Inc., USA

3. NASA Goddard Space Flight Center, USA

4. NASA Kennedy Space Center, USA

5. NASA Marshall Space Flight Center, USA

6. Jet Propulsion Laboratory, USA

This paper describes the NAIRAS model now publicly available at NASA’s Community Coordinated Modelling Center. NAIRAS predicts dosimetric and radiation flux quantities for assessing human radiation exposure and radiation effects to flight vehicle electronic systems.