POSTER SESSION INTRODUCTION

POSTER SESSION

PA-1    Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

C. Bennett¹, T. Xiao¹, T. Leonard², J. Young¹, G. Vizkelethy¹, E. Bielejec¹, D. Hughart¹, M. Marinella³, J. Incorvia²

1. Sandia National Laboratories, USA

2. University of Texas, Austin, USA

3. Arizona State University, USA

Domain-wall magnetic tunnel junction (DW-MTJ) parts were exposed to total ionizing doses, ion displacement damage, or both. The parts demonstrated resilience to ionizing radiation, but degraded similarly to other MTJs in response to heavy ions.

PA-2    Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors with SiO2 Tunnel Layers

Z. Guo¹, E. Zhang¹, D. Fleetwood¹, R. Schrimpf¹, R. Reed¹, A. Chasin², J. Mitard², D. Linten², A. Belmonte², G. Kar²

1. Vanderbilt University, USA

2. imec, Belgium

TID effects are evaluated in IGZO thin-film transistors irradiated under different gate biases. The largest degradation occurs at negative bias. Comparison with back-gated devices indicates that hydrogen plays an important role in degradation.

PA-3    Impact of back-gate bias on the DSOI SRAMs under total ionizing dose irradiation

H. Ren¹, F. Liu², B. Li², Z. Han², S. Chen², L. Wang², S. Ma², G. Zhang², J. Li², P. Cui², J. Gao², J. Wan³, H. Wang⁴

1. Institute of Microelectronics, Chinese Academy of Sciences, China

2. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

3. State Key Lab of ASIC and System, Fudan University, China

4. College of IoT Engineering, Hohai University, China

The impact of back-gate bias and film thickness on TID effect of Double-SOI SRAM are experimentally compared with and without floating body devices. Negative back-gate bias can efficiently improve TID tolerance with thin film.

PA-4    The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

A. Vidana¹, J. Trippe¹, N. Dodds¹, N. Nowlin¹, J. Kauppila², L. Massengill², H. Barnaby³

1. Sandia National Laboratories, USA

2. Reliable MicroSystems, USA

3. Arizona State University, USA

We present experimental total ionizing dose data on GlobalFoundries 12LP 12 nm FinFET technology. The TID response depends on both the transistor threshold voltage and on the number of fins per transistor.

PA-5    Bias Dependence of Total Ionizing Dose Effect in Top-Gate CNTFET

H. Ding¹, Q. Zheng¹, H. Xu², C. Jiangwei¹, N. Gao³, M. Xun¹, Y. Gang¹, C. He¹, Y. Li¹, Q. Guo¹

1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS), China

2. Shanxi Institute for Carbon-based Thin Film Electronics, Peking University, China

3. Beijing Institute of Carbon-based Integrated Circuits, China

The bias dependence of TID in top-gate CNTFET is studied in this paper. ON state is the worst bias condition for the threshold voltage degradation. Abnormal shift of threshold voltage is found under TG bias.

PA-6    Towards ensuring SRAM-PUF integrity under ionizing radiation

U. Surendranathan¹, H. Wilson¹, A. Milenkovic¹, B. Ray¹

1. University of Alabama in Huntsville, USA

Power-up states of SRAM chips are routinely used to derive their PUFs. This paper shows that the data stored in SRAM during irradiation as well as the technology-node impact integrity of SRAM PUFs.

PA-7L  TID Characterization of Preformed Memristor Devices for Use as Ternary PUFs

Spear¹, R. Vonniederhausern², W. Kemp³, D. Telesca²

1. Arizona State University, USA

2. Air Force Research Laboratory, USA

3. University of New Mexico, USA

Experimental results show the response of preformed AlOx devices to TID. Due to the randomness inherent in the devices, 392 devices were tested, and distributions of the devices were investigated before and after radiation.

PA-8L  Displacement and Transient Ionizing Synergistic Effects in μA741 Bipolar Amplifier

Wang¹, R. Li², W. Chen², X. Guo², L. Ding², Y. Wang¹

1. Peking University, China

2. Northwest Institute of Nuclear Technology, China

DD/TREE synergistic effects in μA741 amplifier are characterized experimentally under neutron and pulsed X-ray irradiation. SPICE modeling is also accomplished based on the displacement damage and photocurrent data of bipolar transistors to analyze the mechanism.

PA-9L  On-Chip Measurement and Simulation of Transistor-Level Transient Photocurrent in Sub-50 nm SOI Technology

Vibbert¹, J. Damico¹, R. Cadena¹, M. Alles¹, D. Ball¹, A. Sternberg¹, E. Zhang¹, T. Holman¹, J. Kauppila¹, L. Massengill¹

1. Vanderbilt University, USA

The transistor-level transient photocurrent response of a 45nm PD-SOI technology is captured by an on-chip photocurrent measurement circuit. Both FXR and pulsed-laser irradiation trigger comparable photocurrent generation mechanisms; these results are corroborated by TCAD simulations.

PB-1    Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Beyond 16nm

L. Artola¹, M. Glorieux², G. Hubert¹, C. Inguimbert¹, T. Bonnoit², R. Rey¹, T. Lange², D. Levacq³, C. Poivey³

1. ONERA, France

2. IROC Technologies, France

3. ESA, Netherlands

This work presents the impact of the angle of incidence of low-energy protons in SRAM cells of several deep sub-micron technologies. Experimental data are presented and discussed with the support of multi-physics and multi-scales simulations.

PB-2    Using Track Structure Theory to Predict Heavy-Ion and Neutron Cross-Sections

D. Hansen¹, S. Resor¹, D. Czajkowski¹, B. Vermeire¹

1. Space Micro, USA

This paper uses a track structure theory (TST) model for the calculation of 14 MeV neutron, and heavy-ion cross-sections from measured data. The TST model performs well compared to other models in the literature.

PB-3    Influence of Well Contact on Single Event Transient in sub-20 FinFET Process

Q. Sun¹, Y. Guo¹, B. Liang¹, M. Tao², Y. Chi¹, P. Huang¹, Z. Wu¹, J. Chen¹, D. Luo¹, H. Sun¹

1. National University of Defense Technology, China

2. College of Electrical and Information Engineering, Hunan University, China

This paper discusses the influence of well contact on SET in sub-20 FinFET. Experiment and high-precision TCAD simulation results show that well contact has less impact on SET, which is different from planar CMOS.

PB-4    Quantitative Analysis on Multi-Factor Coupling Influence Effects of Single Event Transient Characteristic Dependence of 22 nm FDSOI Circuits

L. Tongde¹, Z. Yuanfu¹

1. Beijing Microelectronics Technology Institute, China

A 22nm FDSOI test chip is designed for obtaining SET characteristics. The contribution of the influencing factors is quantified. The research results can support the flexible selection of low-cost radiation hardened methods considering conventional performance.

PB-5    Laser-induced micro-SEL current profile modeling for high-accuracy ML-based micro-SEL detection

J. Zhao¹, Y. He¹, Z. Qin¹, K. Chong², W. Shu², Y. Sun¹, P. Chan¹, J. Chang^1,2

1. Nanyang Technological University, Singapore

2. Zero-Error Systems Pte Ltd, Singapore

We present a novel laser-induced micro-Single-Event-Latchup current-profile model for Machine-Learning-based micro-SEL detection. The detection accuracy and delay are improved to ~95% from ~73% and to the microseconds range, respectively, thereby rendering practical real-time detection.

 

PC-1    Closing the “10-100 eV Gap” for Electron Thermalization in GaN Devices from First Principles

D. Nielsen¹, C. Van de walle², S. Pantelides³, R. Schrimpf³, D. Fleetwood³, M. Fischetti¹

1. University of Texas at Dallas, USA

2. University of California, Santa Barbara, USA

3. Vanderbilt University, USA

We report full-band Monte Carlo simulations of electron thermalization in GaN from 100 eV, where energy-loss processes are poorly known. Electrons thermalize in ~1 ps, generating electron-hole pairs with an average energy of ~9.4 eV/pair.

PC-2    Modeling of Total Ionizing Dose Effects in SOI FinFETs at High Temperature

X. Zhang¹, F. Liu¹, B. Li¹, Y. Huang¹, S. Chen¹, J. Li¹, T. Zhang¹, Q. Zhang¹, H. Yin¹, J. Wan², H. Wang³, Y. Guo⁴, J. Luo¹

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

2. State Key Laboratory of ASIC and System, Fudan University, China

3. College of IoT Engineering, Hohai University, China

4. Nanjing University of Posts and Telecommunications, China

Considering the repair effect of fixed-trapped charges and temperature dependence of threshold voltage, an electrostatic potential model of TID effect at high temperature is proposed for SOI FinFETs. Both simulations and experiments validate it.

PC-3    Ultra-high Energy Heavy Ion Irradiation Effects on Carbon Nanotubes

H. Shu¹, P. Lu¹, J. Gao¹, P. Zhao², M. Zhu³, J. Yan³, B. Li¹

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

2. Institute of Modern Physics, Chinese Academy of Sciences, China

3. School of Information Science and Technology, North China University of Technology, China

Ultra-high energy heavy ion irradiation causes physical interaction between carbon nanotubes and the SiO₂substrate, forming distinct micrometer-size damages. The damaged region close to the incident site is insulating while adjacent carbon nanotubes are relocated.

PC-4    Investigation of Elements Migration of Organic-Inorganic Metal Halide Perovskite Films Materials Induced by Proton Irradiation

X. Zhang¹, L. Wang¹, H. Zhu¹, P. Lu¹, X. Li¹, B. Li¹

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

XPS and EDS analytical technology were carried out to investigate the elements migration phenomenon in perovskite materials under high fluence proton irradiation. This basic analysis is advantageous to explore the high radiation resistance of perovskite.

PC-5L  Low-Frequency Noise and Deep Level Transient Spectroscopy in NPN Si Bipolar Junction Transistors Irradiated with Si Ions

Luo¹, J. Montes², E. Bielejec², G. Vizkelethy², R. Schrimpf¹, D. Fleetwood¹, E. Zhang¹

1. Vanderbilt University, USA

2. Sandia National Laboratories, USA

Deep level transient spectroscopy and 1/f noise measurements are performed on n-p-n Si BJTs irradiated with Si ions. DLTS and 1/f noise are shown to provide complementary information about defects in linear bipolar devices.

PD-1L  Impact of Ground Material and Space Protons Direction on Neutron Flux in Atmosphere

Cintas¹, F. Wrobel², F. Saigné², M. Ruffenach¹, D. Herrera³, F. Bezerra¹, J. Mekki¹, A. Varotsou³

1. CNES, France

2. Université de Montpellier, France

3. TRAD, France

We simulate shower of particles in atmosphere and study the effect of the presence of water at ground level. We also investigate the incidence angle of primary protons at the top of the atmosphere.

PE-1     Review of Artemis I Mission Radiation Challenges and Data for the Crew Module

C. Bailey¹, R. Gaza¹, C. Patel², J. Pritts³, K. Nguyen³

1. NASA Johnson Space Center, USA

2. Lockheed Martin Corporation, USA

3. Jacobs Technology Incorporated, USA

We review the Artemis-I mission and corresponding radiation hardness assurance (RHA) process. We discuss the RHA methodologies employed, design challenges overcame, in-flight anomalies observed, and lessons learned from the mission and by the program.

PE-2     Under-Constrained SEE Data: Implications for Estimating and Bounding SEE Rates

R. Ladbury¹

1. NASA Goddard Space Flight Center, USA

Increasingly scarce SEE testing resources and rapid growth of the New Space sector have in-creased the prevalence of under-constrained SEE data.  We develop Monte Carlo tools to assess implications for SEE rate estimation.

PE-3     FIERA: An FPGA Emulation-based Hardware Soft Error Tolerance Evaluation Platform for SoCs

O. Atli¹, P. Mohan¹, M. King², K. Mai¹

1. Carnegie Mellon University, USA

2. Sandia National Laboratories, USA

We introduce FIERA, an FPGA-accelerated flexible error injection tool 104x faster than RTL simulation-based methods.  We demonstrate the FIERA by evaluating soft error vulnerabilities of SoCs under deep learning workloads and present our test chip.

PE-4     A Confidence-Based Approach to Including Survivors in a Probabilistic TID Failure Assessment

C. Champagne¹, B. Sierawski¹, R. Ladbury², M. Campola², D. Fleetwood¹

1. Vanderbilt University, USA

2. NASA Goddard Space Flight Center, USA

A probabilistic TID failure assessment is extended to include survivor data. This enables a formal analysis of radiation tolerant devices tested to a maximum dose, as well as flight heritage, in a hardness assurance methodology.

PE-5     Correlating Historical Device Degradation Data to Radiation-Induced Degradation System Effects for a LiDAR System

R. Nederlander¹, A. Witulski¹, A. Sternberg¹, R. Reed¹, G. Karsai², R. Ladbury³, E. Zhang¹, J. Evans¹, R. Schrimpf¹, K. Ryder³, M. Campola³, N. Mahadevan², R. Austin³

1. Vanderbilt University, USA

2. Institute for Software Integrated Systems, Vanderbilt University, USA

3. NASA Goddard Space Flight Center, USA

Bayesian fault probabilities are used to predict TID effects in systems. These probabilities are combined to predict system level effects on a LiDAR system. This model allows for efficient prescreening of radiation sensitive systems.

PE-6     Applicability of the Accelerated ELDRS Test Method – Temperature Switching Irradiation

X. Li¹, X. Wang¹, M. Liu¹, Y. Xin¹, Q. Zheng¹, J. Cui¹, Y. Li¹, W. Lu¹, Q. Guo¹

1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China

A temperature-switching irradiation (TSI) sequence based on first-principles understanding of inter-face-trap buildup and annealing is shown to be a conservative test for ELDRS at ultra-low dose rate in linear bipolar devices.

PE-7L   Heavy-Ion Test Methods and Data Analysis for Silicon Carbide Power Devices

Sengupta¹, D. Ball¹, A. Witulski¹, R. Schrimpf¹, K. Galloway¹, M. Alles¹, R. Reed¹, E. Zhang¹, J. Hutson², J. Lauenstein³, J. Osheroff³

1. Vanderbilt University, USA

2. Lipscomb University, USA

3. NASA Goddard Space Flight Center, USA

A novel standardized single-event effects test methodology for radiation hardness assurance of silicon carbide power devices is proposed, optimized to determine the true values for both non-destructive and destructive single-event effect thresholds in these devices.

PF-1     TID-Induced Loss and Optical-Power Annealing of Straight and Curved Silicon Photonic Waveguides Using Pulsed X-rays

B. Ringel¹, J. Teng¹, M. Hosseinzadeh¹, J. Heimerl¹, Z. Brumbach¹, A. Little², G. Tzintzarov², D. Monahan², S. Lalumondiere², J. Cressler¹

1. Georgia Institute of Technology, USA

2. The Aerospace Corporation, USA

The TID response of straight and curved integrated silicon-photonic waveguides are evaluated. Transmission degradation, irrespective of curvature, was observed above 5 Mrad(Si). Optical-power-induced annealing due to heating was also observed and shown to recover performance.

PF-2     Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in ε-Ga₂O₃Thin Films

Y. Tang¹, Y. Yang², L. Wang¹, M. Li¹, H. Zhu¹, Z. Wu², B. Li¹

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, China

2. Beijing University of Posts and Telecommunications, China

1907 MeV Ta ions were employed to irradiate epitaxial ε-Ga₂O₃ thin films. Morphological variations and crystallographic transformations are observed in the post-irradiated films. Despite obvious degradation, ε-Ga₂O₃ photodetectors still operate normally under high irradiation fluences.

PF-3     Influence of Hydrogen on the Radiation-Induced Attenuation of Ge-doped Optical Fiber

A. Morana¹, M. Roche¹, E. Marin¹, A. Boukenter¹, Y. Ouerdane¹, S. Girard¹

1. Laboratory Hubert Curien, France

We studied the combined radiation and hydrogen effects on the NIR attenuation of a standard Ge-doped fiber up to a dose of 100 kGy, to characterize the influence of the molecular or bonded atomic hydrogen.

PF-4     Alpha Particle-Induced Persistent Effects in a COTS 3D-Integrated Imager

M. Hu¹, M. Mccurdy¹, B. Sierawski¹, R. Schrimpf¹, R. Reed¹, M. Alles¹

1. Vanderbilt University, USA

The nature and rate of alpha-particle-induced persistent effects observed in a heterogeneously integrated COTS 3D-IC imager are shown to be dependent on operating condition and the functional layer in which the alpha particles stop.

PG-1    Mixed-field radiation monitoring and beam characterization through silicon solid-state detectors

K. Bilko¹, R. Garcia²

1. Université Jean Monnet, France

2. CERN, Switzerland

Silicon solid-state detector for the monitoring of the mixed radiation field is presented with the focus on the CERN’s CHARM facility. The use of the detector for indirect beam characterization is demonstrated.

PG-2    Correlative Single Event Latchup (SEL) characterization of the ADMV1013 Wideband Microwave Upconverter at multiple heavy ion laboratories

J. Likar¹, E. Shi¹, C. Pham², T. Decker³, S. Lidia⁴

1. Johns Hopkins University / Applied Physics Laboratory, USA

2. Johns Hopkins University / Applied Physics Laboratory, USA

3. ADI, USA

4. Facility for Rare Isotope Beams / Michigan State University, USA

The ADMV1013 wideband, microwave upconverter was subjected to heavy ion testing at three different accelerators. Combined results illustrate the compatibility of the Michigan State University Facility for Rare Isotope Beams Single Event Effects laboratory (FSEE).

PH-1    Fault-tolerant Convolutional Neural Networks with Reconfigurable Processing Element Arrays

C. Jin¹, Y. Ibrahim¹, H. Tian¹, S. Ko¹, L. Chen¹

1. University of Saskatchewan, Canada

This paper adopts multiple processing arrays with dynamic partial reconfiguration for radiation tolerance CNNs in FPGA. Fault injection and laser experiments show that critical error rate reduces by 25x, while overall accuracy remains 99%.

PH-2    In-Situ Single-Event Effects Detection in 22 nm FDSOI Flip-Flops

K. Appels¹, R. Weigand², W. Dehaene¹, J. Prinzie¹

1. KU Leuven, Belgium

2. European Space Agency, Netherlands

A novel Single-Event Effects in-situ error detection methodology for high-speed radiation tolerant integrated circuits. Two error detection flip-flops implemented in a 22 nm Silicon-on-Insulator technology are presented, compared and experimentally verified with two-photon absorption injection.

PH-3    A Radiation-Hardened Optical Transceiver in 180nm CMOS Technology

Y. Luo¹, C. Hong², A. Anderson¹, D. Dolt¹, S. Palermo¹

1. Texas A&M University, USA

This paper presents the design and characterization of a radiation-hardened, VCSEL-based optical transceiver operating at 0.5 Gb/s and transmitter at 2 Gb/s. Single-event effect (SEE) and Total ionizing dose (TID) have been verified for the circuit operation.

PI-1      Synergism between Stress and Cosmic Ray Neutron Irradiation in 650V Rated IGBTs for Automotive Applications

D. Bae¹, S. Khan², K. Kim¹, S. Chung³, J. Kih¹, S. Woo¹, C. Cho¹, J. Kim¹, S. Yoon¹, S. Wender⁴, Y. Kim¹

1. QRT, Republic of Korea

2. QRT, Pakistan

3. QRT, USA

4. Los Alamos National Laboratory, USA

This paper investigates the potential synergism between various stress conditions (temperature, humidity, and bias) and cosmic ray neutron irradiation and its impact on single event burnout (SEB) endurance of insulate-gate bipolar-transistor (IGBT) in terrestrial environment.

PI-2      Reliability evaluation of Convolutional Neural Network’s basic operations on a RISC-V processor

F. Santos¹, O. Sentieys¹, A. Kritikakou¹

1. INRIA, France

We evaluate the neutron-induced error rate of Convolutional Neural Network basic operations on a RISC-V processor. Although executing the algorithm in parallel increases performance, memory errors are the major contributors to the device error rate.

PI-3      Impact of High-Level-Synthesis on Reliability of Neural Network Hardware Accelerators

M. Traiola¹, F. Fernandes dos santos¹, O. Sentieys¹, A. Kritikakou¹

1. INRIA / IRISA, France

We characterize the impact of High-Level Synthesis (HLS) on the reliability of Neural Networks on FPGAs exposed to neutron. Our results show that the larger the circuit generated by HLS, the larger the error rate.

PI-4      Tensor Processing Unit Reliability Dependence on Temperature and Radiation Source

P. Bodmann¹, P. Rech²

1. UFRGS, Brazil

2. University of Trento, Italy

We compare high-energy neutrons and heavy ion cross-sections of Coral TPU, considering different temperatures. The TPU’s cross-section for heavy ions is ∼ 20x higher than for neutrons and higher temperatures reduce the neutron-induced error rate.

PI-5      Telemetry-based Analysis of Single-Event-Induced Failures in Unmanned Aerial Vehicles

S. Wang¹, D. Goloubev², S. Wen³, C. Cazzaniga⁴, C. Frost⁴, B. Bhuva¹

1. Vanderbilt University, USA

2. Cisco Systems Inc., Belgium

3. Cisco Systems Inc., USA

4. Science & Technology Facilities Council, United Kingdom

Telemetry-based data collection and analysis is used to characterize single-event effects for commercially-available drones for terrestrial-neutron beam. FIT rates for different failure mechanisms show very high vulnerability.

PI-6      Temperature Dependence of Single-Event Upsets and Multi-Cell Upsets in 5-nm FinFET SRAMs

N. Pieper¹, Y. Xiong¹, D. Ball¹, R. Fung², S. Wen², J. Pasternak³, B. Bhuva¹

1. Vanderbilt University, USA

2. Cisco Systems, Inc., USA

3. Synopsys, Inc., USA

Single-event upset cross-sections are investigated for SRAM cells as a function of temperature for nominal and reduced supply voltages. Experiments show SEU cross-section and MCU rates decrease with increasing temperature.