Technical Program 2025 – Session G

2025 IEEE NSREC TECHNICAL PROGRAM

SESSION G SCHEDULE

NASHVILLE RENAISSANCE HOTEL, NASHVILLE, TN

THURSDAY, JULY 17, 2025

SESSION G

Grand Ballroom 2-3

SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING

11:00 AM

SESSION INTRODUCTION

Chair: Ashok Raman (CFDRC)

G-1

11:05 AM

Impact of CnRX Structure on SEU Sensitivity Increasement by Using Stacked Transistors at 22-nm FD SOI Node and Improvement Method

L. Tongde1, Z. Yuanfu2, Z. Yong-qin1, Y. Jing-shuang1, Y. Chun-qing1, W. Liang1

  1. Beijing Microelectronics Technology Institute, China
  2. China Academy of Aerospace Electronics Technology, China

SE-Hardening efficiency by using stacked devices is reduced due to process-dependent CnRX structure with virtual transistors at nodes protected by stacked structure. An insertion structure is designed to decouple connection relationships and achieve full hardening.

G-2

11:20 AM

Atomic-Scale Molecular-Dynamics Framework for Single-Event Displacement Damage in Silicon

G. Mayberry1, J. Trippe1, D. Ball1, R. Reed1, D. Fleetwood1, R. Schrimpf1, S. Pantelides1

  1. Vanderbilt University, USA

A two-stage, atomic-scale molecular-dynamics framework is employed to describe vacancy-count distributions for single-event displacement damage (SEDD) in advanced CMOS. Broad distribution variances, corroborated by experimental data, suggest a role in future hardness assurance against SEDD.

G-3

11:35 AM

Design of Experiments Applied to the Single-Event Upset-Rate Equation

D. Hansen1, B. Kimbrell1, T. Manich1, C. Pownell1, I. Zavatkay1

  1. L3 Harris, USA

This paper takes a design of experiments approach to rate calculations using different expressions for the cross-section, flux, and transport operator. The best methods are identified based on comparison to on-orbit data.

2025 IEEE NSREC POSTER SESSION G

NASHVILLE RENAISSANCE HOTEL, NASHVILLE, TN

WEDNESDAY, JULY 16, 2025

2:50 PM – 4:50 PM

Germantown 1-3

PG-1    Impact of Hot-Carrier Diffusivity on Single-Event Upsets in Highly Scaled FinFETs

J. Vielmette1, D. Ball1, J. Trippe1, G. Walker1, M. Fischetti2, D. Nielsen2, M. Alles1, K. Nagamatsu3, R. Schrimpf1

  1. Vanderbilt University, USA
  2. University of Texas at Dallas, USA
  3. Northrop Grumman Systems Corporation, USA

Sensitivity of charge collection in scaled finFET devices to the assumed thermalization rate of radiation-induced hot carriers is demonstrated. Full-band Monte Carlo simulations validate current approaches to simulating single-event effects using drift-diffusion tools

PG-2    Evaluation of Single-Event Effects on Sub-20nm FinFET based AI Chips

F. Shuanglin1, L. Bin1, W. Xun1, C. Yaqing1, C. Jianjun1, L. Deng1, Y. Guofang1

  1. College of Computer Science and Technology, National University of Defense Technology, China

Through results of heavy-ion and laser pulse testing, the Single-Event Effect (SEE) performance of neural network algorithms on sub-20nm AI chips was summarized, and the characteristics of SEE were revealed.

4:00 PM – 5:30 PM

GRAND BALLROOM 2-3

RADIATION EFFECTS COMMITTEE ANNUAL OPEN MEETING