7:15 AM

Grand Ballroom 1

Breakfast

INVITED TALK

8:30 AM – 9:30 AM

Grand Ballroom 2-3

SESSION F

Grand Ballroom 2-3

9:30 AM

F-1

9:35 AM

SESSION G

Grand Ballroom 2-3

11:00 AM

11:50 AM – 11:55 AM

1:30 PM – 3:30 PM

1:15 PM – 4:00 PM

DW-1   Neutron Radiation Testing of Multiple System-on-Chip Devices Using an Open Test Framework

J. Goeders¹, W. Smith¹, J. Bertrand¹, E. Hunter¹, M. Wirthlin¹

1. Brigham Young University, USA

This work presents an open-source framework for neutron testing of various system-on-chip (SoC) devices.  The framework is demonstrated through a neutron test with four different types of SoC boards and 16 boards in total.

DW-2   Radiation-Induced Single-Event Effects on Gemini APU In-Memory Processors

D. Wildenstein¹, M. Gruber², G. Williams³, N. Sampson³, A. George¹

1. University of Pittsburgh, USA
2. Troxel Aerospace, USA
3. GSI Technology, USA

Processing-in-memory architectures exhibit many characteristics beneficial for spaceflight, including fast performance and low power consumption. This research documents the first heavy ion radiation test of the Gemini-I APU processing-in-memory architecture for single-event effects.

DW-3   Impact of Single-Event Upsets on an SPI-Controlled Ka-Band Radiation-Hardened Beamformer Core Chip for Space Applications

N. Pelagalli¹, F. Pergolesi², F. Vargas¹, A. Franzese³, A. Malignaggi¹, C. Carta¹

1. Leibniz Institute for High Performance Microelectronics, Germany
2. Paradigma Technologies, Slovenia
3. Qualcomm Technologies Inc., USA

This paper presents high-energy radiation tests on a 28-GHz SPI-controlled beamformer chip for satellite communications in 130nm SiGe BiCMOS rad-hard technology. Results show robust RF performance and mixed-signal functionality despite increased SEU sensitivity.

DW-4   High-Speed In-situ TID Testing of QSFP Transceivers

R. Chandru¹, D. Ramaswami¹, K. Balantrapu¹, E. Mikkola¹, S. Moazeni²

1. Alphacore Inc, USA
2. Univ of Washington Seattle, USA

We describe a lightweight test setup irradiating QSFPs in Co-60 chamber and observe 100% reduction of the eye-opening at 12.5Gbps for DUTs with link loss and an increase in BER of up to 1000x.

DW-1   The Aerospace Corporation’s Compendium of Recent Radiation Testing Results

S. Davis¹, R. Koga¹, K. Lee¹, J. Taggart¹, G. Tzintzarov¹, A. Wright¹

1. The Aerospace Corporation, USA

Radiation testing was performed on several commercial components to determine the response of these components to the space radiation environment. Testing was mostly focused on SEE from protons and heavy ions.

DW-2   CHALICE: Calculator for Highly Accurate Laser-Induced Carrier Excitation

A. Ildefonso¹, J. Hales², T. Crane², D. McMorrow²

1. Indiana University Bloomington, USA
2. U.S. Naval Research Laboratory, USA

We present details on the operation of CHALICE, which is a freely available online tool that calculates fundamental quantities related to pulsed-laser SEE testing including laser-equivalent LET and deposited charge.

DW-3   Single-Event Latch-up Data from Heavy-Ion Irradiation of COTS Components with Inter-Lot Variability Study

D. Soderstrom¹, I. Slipukhin¹, M. Sacristan barbero², M. Poizat³, T. Borel³, H. Kettunen⁴, M. Sivertz⁵, N. Emriskova¹, A. Waets¹, K. Bilko¹, M. Delrieux¹, R. Garcia¹

1. CERN, Switzerland
2. CIEMAT – CERN, Switzerland
3. ESA, Netherlands
4. RADEF, Finland
5. NSRL-BNL, USA

Multiple samples of five different references of COTS components have been irradiated at various heavy-ion facilities, and measured single-event latch-up cross sections are reported. Part-to-part variations of latch-ups sensitivities are investigated.

DW-4   Radiation Evaluation of the TPS7H6101-SEP Radiation-Tolerant 200V, 12A GaN Half Bridge Power Stage

T. Lew¹, A. Marinelarena¹, M. Trevino¹

1. Texas Instruments, USA

Single Events Effect (SEE) characterization and total ionizing dose (TID) results for the TPS7H6101-SEP eGaN power stage are summarized, showing very robust SEE performance up to LETEFF=43 MeV-cm2/mg and excellent TID behavior to 50krad(Si).

DW-5   Compendium of NASA Goddard Space Flight Center’s Current Radiation Effects Test Results

M. Obryan¹, L. Ryder², J. Lauenstein², E. Wilcox³, K. Ryder⁴, T. Carstens², S. Roffe², A. Wood², M. Campola², J. Osheroff³, M. Joplin³

1. SSAI, Inc., USA
2. NASA GSFC, USA
3. NASA, USA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose, and total ionizing dose (TID).

DW-6   Soft Error Evaluation of 12nm FinFET Technology Based on COTS GPU Neutron Testing

L. Artola¹, A. Urena-Acuna¹, E. Christopher², C. Li², G. Hubert¹

1. ONERA – University of Toulouse, France
2. University of Saskatchewan, Canada

This work presents the experimental SEE evaluation of TU104 COTS-GPU designed in 12nm FinFET technology under neutron irradiations. SEU and SEFI events are discussed and compared with SEU modeling to consolidate the technology susceptibility acknowledge.

DW-7   Neutron Radiation Results of Fault-Tolerant Soft RISC-V Linux SoCs on SRAM-based FPGAs

A. Wilson¹, G. Baker¹, M. Wirthlin¹

1. Brigham Young University, USA

This work presents a fault-tolerant RISC-V Linux SoC employing TMR, ECC, and SEU-aware placement on Kintex 7 and KU060 FPGAs.   The neutron radiation results demonstrate improved cross-section up to 43 times for the mitigation methods.

DW-8   Total Ionizing Dose Effects on Clock Systems and Peripheral Modules of the MSP430FR6989

I. Hudson¹, J. Carpenter¹, T. Peyton¹, J. Kim¹, R. Baltazar Felipe¹, J. Ermi¹, D. Loveless¹

1. IU CREATE, USA

TID testing of the MSP430FR6989 microcontroller was conducted to evaluate bias dependence and variation in peripheral module degradation. Three peripherals were tested at two low-power modes and over 30 configurations, showing variability in TID response.

DW-9   Threshold Shifts Caused by TID Depending on Memory Cell States in Charge Trap Flash Memories

T. Ozawa¹, F. Jun², K. Kobayashi¹

1. Kyoto Institute of Technology, Japan
2. Okayama Prefectural University, Japan

Total Ionizing Dose effect on Triple Level Cell NAND flash was studied. Threshold shifts and retention degradation varied by programmed state and electric field direction. Errors are from both charge loss and peripheral circuit degradation.

DW-10  Radiation Evaluation of the TPS7H502X-SP Radiation-Hardness-Assured (RHA) Single-Ended PWM Controller with Integrated Silicon (Si) and Gallium Nitride (GaN) Field Effect Transistor (FET) Gate Driver

T. Lew¹, A. Marinelarena¹, E. Johnson¹

1. Texas Instruments, USA

Single Events Effect (SEE) characterization and total ionizing dose (TID) results for the TPS7H502X-SP single-ended PWM controller with integrated gate driver are summarized, showing robust SEE performance up to LETEFF=75 MeV-cm2/mg and excellent TID behavior.

DW-11  Characterization of several RF devices sensitivity to Total Ionizing Dose

J. Diot¹, G. Assaillit¹, D. Poujols¹, M. Gaillardin¹

1. CEA, France

Radio-Frequency (RF) components are increasingly used. It is therefore essential to be able to characterize their sensitivity to ionizing radiation. The aim of this study is to determine the susceptibility of five RF components.

DW-12  Single-Event Effects in Commercial Photonic Transceivers

G. Tzintzarov¹, J. Ocheltree¹, G. Allen², C. Boone¹, A. Bozovich²

1. The Aerospace Corporation, USA
2. NASA JPL, USA

The Aerospace Corporation is beginning to build a database of heavy ion data for COTS small form-factor pluggable transceivers. A small collection of transceivers were exposed to heavy ions and SEFI cross sections are shown.

DW-13  2025 CERN Compendium of Radiation Effects in Candidate Electronics for High-Energy Particle Accelerator Systems

R. Ferraro¹, A. Zimmaro¹, A. Scialdone¹, G. Foucard¹, E. Vasileiadi¹, S. Georgakakis¹, V. Pirc¹, S. Danzeca¹, A. Masi¹

1. CERN, Switzerland

The sensitivity of a variety of components for particle accelerator electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital, and mixed devices.

DW-14  Summary submission pending acceptance to the Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC), Kansas City, Missouri, United States, July 24-28, 2023. System-Level Single Event Effects Testing of the PIRT 1280MVCam InGaAs Infrared Camera

L. Ryder¹, J. Lauenstein¹, M. Campola¹, M. Kowalewski¹

1. NASA GSFC, USA

System-level SEE testing was conducted on a commercial-off-the-shelf InGaAs camera to examine the impacts of SEFIs originating within the constitutive electronics. SEFI signatures and the complexities of testing tightly packaged commercial imaging systems are discussed.

DW-15  SEE and Total Dose Results of the ISL74324Mxx 500MHz-6.5GHz RF Amplifier

W. Newman¹, M. Campanella¹, D. Thornberry¹, M. Bailly¹, E. Thomson¹

1. Renesas Electronics America, USA

We report the single event performance and low dose rate TID results of the radiation-hardened ISL74324Mxx 500MHz-6.5GHz Broadband RF Amplifier.

DW-16  The Radiation Performance and Production Flows of Renesas’s Radiation Tolerant and Radiation Hardened Space Plastic Parts

W. Newman¹, M. Campanella¹, J. Brewster¹, E. Thomson¹

1. Renesas Electronics America, USA

We describe the production flows of Renesas’s ISL71xxxM/SLHM families of radiation-tolerant and radiation-hardened plastic-package integrated circuits and report some example single event and TID results.

DW-17  Total Dose and SEE Testing of the ISL74420M Radiation Tolerant Quad Clock Fanout IC

N. Van vonno¹, W. Newman¹, L. Pearce¹, E. Thomson¹, M. Campanella¹

1. Renesas Electronics America, USA

We report results of total ionizing dose and single-event effects testing on the radiation tolerant ISL74420M Quad Clock Fanout IC. The part provides four synchronized clocks and is particularly useful in multiphase power converters.

DW-18  Compendium of Single-Event Effects Test Results for Candidate Electronics at NASA Johnson Space Center from 2024

R. Rinderknecht¹, S. Martinez², K. Nguyen¹, E. Agarwal³, J. Pritts¹, B. Reddell¹, R. Gaza¹

1. NASA Johnson Space Center, USA
2. NASA, USA
3. NASA Johnson Space Center, EV5 Electronic Design and Manufacturing Branch, USA

We present single-event effect (SEE) test results and analysis produced by NASA JSC in 2024 for candidate electronic components and devices. Devices tested include commercial memories, integrated circuits, and a prototype flight unit.

DW-19  Total Dose and Single-Event Effects Testing of the ISL75054 Ultra-Low Noise LDO

M. Campanella¹, W. Newman¹, N. Van Vonno¹, D. Wackley¹, P. Larry¹, E. Thomson¹, C. Thomson¹

1. Renesas Electronics America, USA

We report the single event effects and total ionizing dose test results for the ISL75054 ultra-low noise low-dropout regulator.

DW-20  Total Ionizing Dose response of COTS Operational Amplifiers

D. Feist¹, D. Hiemstra², A. Noguera Cundar¹, J. Cardenas Chavez¹, L. Chen¹

1. University of Saskatchewan, Canada
2. MDA, Canada

This study evaluated the Total Ionizing Dose response of four different COTS operational amplifiers using low dose rate 60Co irradiation. Results revealed all amplifiers remained functional up to 30 krad(Si).

DW-21  TID and SEE response of the AMC1350EVM Isolation Amplifier

A. Noguera Cundar¹, D. Hiemstra², J. Cardenas Chavez¹, L. Chen¹

1. University of Saskatchewan, Canada
2. MDA, Canada

TID and SEE effects on the  AMC1350 isolation amplifier were studied using low dose rate 60Co irradiation and high  energy protons respectively. The isolation amplifier showed high robustness against radiation

DW-22  Radiation Evaluation of the TPS7H4104-SP Radiation-Hardness-Assured (RHA) 3V to 7V Input, 3A/Channel Quad-Channel Synchronous Step-Down Converter

A. Marinelarena¹, T. Lew¹, J. Cruz-Colon¹

1. Texas Instruments, USA

Single Events Effects characterization and Total Ionizing Dose results for the TPS7H4104-SP 3V to 7V Input, Step-Down Converter is summarized, showing very robust SEE performance up to LETEFF=75MeV-cm2/mg and excellent TID performance up to 100krad(Si).

DW-23  Investigating the suitability of High-Performance Linux-based System-on-Modules for Lunar Applications

L. Coïc¹, G. Giuffrida², E. Le Goulven¹, S. Yjjou¹, A. Marino², P. Garcia¹, L. Turchi³, G. Magistrati⁴, A. Cowley⁴

1. TRAD, France
2. IngeniArs, Italy
3. SPACECLICK, Italy
4. European Space Agency, Netherlands

Characterization campaigns conducted on two System-on-Modules destined for lunar surface applications are presented. Their TID and SEE sensitivities were investigated under irradiation. Outgassing, Offgassing and Lifetest campaigns were also performed in this ESA project.

DW-24  Development of a Double Scattering System for Radiation Effects

C. Corbridge¹

1. ProNova Solutions, USA

A double scattering system has been developed at ProNova Solutions for radiation effects testing. This system utilizes protons more efficiently, resulting in a more uniform 40 cm diameter beam.

DW-25  Functional Failure Induced by TID at Low-Dose Rate and High Energy Proton SEE Response of Commercial-off-the-Shelf Electronics

B. Torres-kulik¹, M. Mahmud¹, D. Hiemstra¹

1. MDA Space, Canada

Commercial-off-the-shelf electronic components were subjected to gamma (60CO) irradiation at low-dose rate and 105 MeV protons to characterize their susceptibility to total ionizing dose and proton induced single event effects respectively.

DW-26  Total Ionizing Dose Characterization of Microchip Retriggerable Latching Current Limiting Power Switch

S. Russell¹, D. Johnson¹, E. Colmet-daage¹

1. Microchip Technology, USA

The 100krad total ionizing dose characterization results of Microchip Technology’s radiation-hardened quad retriggerable latching current limiter (RLCL) power switch IC, the LX7714, are presented.

DW-27  SEE Evaluation of a Serverless Computing Architecture under 14-MeV Neutrons

D. Pacios¹, M. Rezaei¹, J. Vázquez-poletti¹, S. Ignacio-cerrato¹, J. Clemente¹

1. Universidad Complutense de Madrid (UCM), Spain

This paper presents the effects of 14-MeV neutrons on a NVIDIA Jetson Nano running a serverless computing architecture. SDCs and DUEs were observed in its CPU and GPU when executing a serverless-based FFT function

DW-28  Heavy Ion Induced Single Event Effects on the Agilex Commercial off-the-shelf CMOS Field Programmable Gate Array (FPGA)

R. Koga¹, S. Davis¹, J. Shanney¹, K. Pham¹, C. Cao¹, K. Pham¹, J. Dixon¹

1. Aerospace, USA

Agilex field programmable gate array (FPGA) was tested for single event effects with heavy ions. SEEs such as SEU and SEFI were detected. No destructive SELs were observed.

DW-29  Neutron-Induced Upsets and Stuck Bits on COTS Pseudo-Static RAMs

M. Rezaei¹, F. Franco peláez¹, A. Colangeli², J. Clemente¹

1. Universidad Complutense de Madrid (UCM), Spain
2. ENEA Frascati Research Center, Italy

This paper presents an experimental study on the SEE radiation effects of several pseudo-static RAMs (PSRAMs) under 14-MeV neutrons. SEFIs and stuck-at faults were observed while performing static and dynamic tests.

DW-30  Guide to the 2024 IEEE Radiation Effects Data Workshop Record

D. Hiemstra¹

1. MDA Space, Canada

The 2024 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type or effect.

DW-31  Single Event Upset Characterization of the Versal® Adaptive SoC Using Proton Irradiation

D. Hiemstra¹, N. Hu¹

1. MDA Space, Canada

Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Versal® Adaptive SoC Processing System and Programmable Logic are presented. Upset rate in the spaceradiation environment is estimated.

DW-32  Single-Event Latchup Analysis and Mitigation Techniques on I/O Standard Cells in a 12nm Bulk FinFET Technology Node

M. Evans¹, G. Poe¹, J. Laporte¹, S. Vibbert¹, T. Haeffner¹, J. Kauppila¹, L. Massengill¹

1. Reliable MicroSystems, LLC, USA

Guard ring design variations are explored to mitigate single-event latch-up for Input/Output cell design. Data is presented for 12nm bulk FinFET I/O standard cells and custom structures to explore device spacing and guard ring effectiveness.

DW-33  Single Event Latch-up Performance of the INA240 with Mitigation Technique & Proton vs. Heavy Ion Rate Prediction

A. Dyer¹, M. Brozak¹, S. Kulkarni¹, A. Hof¹

1. Mynaric, Germany

The SEE response of the TI-INA240 Bidirectional Current Sense Amplifier has been tested with high energy protons and heavy ions to evaluate on orbit upset rates. A successful SEL mitigation and its effectiveness is presented.

DW-34  System-level Avionics Single Event Effects Testing for Extreme Space Weather Conditions

A. Hands¹, E. Benton², C. Bélanger-champagne¹, B. Gersey³, M. Trinczek¹, E. Blackmore¹

1. TRIUMF, Canada
2. Oklahoma State University, USA
3. Founders Classical Academy, USA

We present new dosimetry measurements for the development of a space weather test facility at TRIUMF, which is capable of recreating the extreme neutron fluxes that would be experienced by avionics during a 1-in-1000-year event.

DW-35  General Purpose RISC-V Processor and SOC SEE Test Results

S. Guertin¹

1. NASA JPL, USA

We report SEE performance of RISC-V processors from StarFive (JH7110) and SiFive (U740). L2 Cache bit errors and crashes of a Linux OS provide upset sensitivity and system impact.

DW-36  Reliability Impacts of Non-Destructive Single-Event Latch-ups in Commercial Electronics

S. Martinez¹, R. Gaza¹, R. Ladbury², L. Ochs², G. Allen³, A. Topper⁴, T. Mondy², R. Hodson⁵

1. NASA Johnson Space Center, USA
2. NASA Goddard Space Flight Center, USA
3. NASA JPL, USA
4. SSAI, USA
5. Langley Research Center, USA

This paper presents the results of reliability life testing performed on commercial electronic devices that experienced non-destructive single-event latch-up (SEL) during heavy-ion testing. Lifetime degradations and their implications for space applications are discussed.

DW-37  TID Induced Parametric Degradation of Commercial-off-the-Shelf Electronics and their SEE responses

M. Mahmud¹, B. Torreskulik¹, D. Hiemstra¹

1. MDA Space, Canada

To characterize the radiation susceptibility, commercial-off-the-shelf electronic components were tested to gamma (Co-60) irradiation for total ionizing dose and to 105 MeV proton irradiation for single event effects.

DW-38  Multi-Angle Single Event Effects Characterization of 100V GaN-on-Si Power Transistor

J. Brandt¹, R. Strittmatter²

1. EPC SPACE, USA
2. EPC Corp, USA

We report on Single Event (SEE) characterization of latest generation radiation hardened 100V GaN-on-Si transistors. Testing was conducted at NSRL using 147MeV/n Bi ion with nominal LET of ~83MeV/mg*cm-2(in Si) over multiple angles.

DW-39  Total Ionizing Dose Effects on 28nm Microchip RT PolarFire® FPGA SRAM Physical Unclonable Functions

M. Urias¹, A. Cai¹, N. Rezzak¹, R. Newell¹, R. Chipana-quispe¹, K. Dave¹

1. Microchip Technology, Inc., USA

This paper provides Total Ionizing Dose (TID) results and experimental evidence of the 28nm PolarFire® FPGA SRAM physical unclonable functions (PUF) maintaining operational reliability exceeding 100 krad(SiO2), demonstrating potential suitability for space application security.

DW-40  Complexities of Ionizing Radiation Testing of State-of-the-Art Single Board Computers

C. Billie¹, R. Pinson², B. Rutherford¹, M. Spear², W. Slater², H. Quinn²

1. University of New Mexico COSMIAC, USA
2. Air Force Research Laboratory, USA

Evaluating complex computing systems presents challenges due to the radiation testing requirements. This work investigates ionizing radiation effects in Nvidia SBCs and power systems and components to better understand testing schemes to increase testing efficiency.

DW-41  In-Situ Measurement of TID Performance of Alphacore’s 22-nm SOI RO-PLL

R. Chandru¹, K. Balantrapu¹, A. Benedetto¹, H. Choudhary¹, M. Turowski¹, P. Bikkina¹, E. Mikkola¹, A. Levy¹

1. Alphacore Inc, USA

Alphacore’s RO-PLL is irradiated in Co-60 chamber up to 300 krad and we observe degradation of jitter (6x from 290fs), duty cycle distortion (6x from 0.2%) and voltage amplitude (up to 100mV from 260mV).