Technical Program 2025 – Tuesday

2025 IEEE NSREC TECHNICAL PROGRAM SCHEDULE

NASHVILLE RENAISSANCE HOTEL, NASHVILLE, TN

TUESDAY, JULY 15, 2025

7:00 AM

Grand Ballroom 1

Breakfast

8:00 AM

Grand Ballroom 2-3

AWARDS PRESENTATION

Kay Chesnut, Raytheon Technologies, Radiation Effects Steering Group, Executive Chair

9:00 AM

Grand Ballroom 2-3

TECHNICAL PROGRAM OPENING REMARKS

Prof. Andrew Sternberg, Vanderbilt University, Technical Program Chair

SESSION A

Grand Ballroom 2-3

SINGLE EVENT EFFECTS: DEVICES & ICs

9:05 AM

SESSION INTRODUCTION

Chair: Sapan Agarwal (Sandia National Laboratories)

A-1

9:10 AM

Key Variables in the Reliability of ML Models Exposed to Neutrons, Protons, and Heavy Ions

B. Coelho1, M. Saveriano1, M. Tali2, C. Frost3, M. Donetti4, M. Pullia4, E. Verroi5, F. Tommasino1, S. Bounasser6, C. Poivey2, P. Rech1

  1. University of Trento, Italy
  2. ESA, Netherlands
  3. ISIS Neutron and Muon Facility, United Kingdom
  4. CNAO, Italy
  5. TIFPA, Italy
  6. ESA, France

 

We test large machine learning models on TPUs at 5 different radiation facilities to identify particle, software, and hardware-dependent reliability behaviors and reduce the variable space to qualify the reliability of neural networks.

A-2

9:25 AM

Assessing System-Level SET Response in Analog PLLs from Component-Level Response

D. Sam1, J. Teng2, B. Ringel1, P. Francis1, J. Moody1, J. Shin1, Z. Brumbach1, A. Ildefonso3, A. Khachatrian4, T. Crane5, D. Mcmorrow4, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Indiana University Bloomington, USA
  4. US Naval Research Laboratory, USA
  5. Jacobs, Inc. and US Naval Research Laboratory, USA

The SETs of standalone circuits of a fully analog SiGe PLL are used to understand system-level SET responses and determine the circuit whose SET response is the most impactful to the output of the PLL.

A-3

9:40 AM

One-Fin versus Two-Fin Single Event Upset Vulnerability at the 3-nm Bulk FinFET Technology

S. Tolson1, J. Kronenberg1, N. Pieper1, Y. Xiong1, D. Ball1, B. Bhuva1

  1. Vanderbilt University, USA

Single-event upset cross-sections are investigated as a function of the number of fins in a transistor at the 3-nm node. Results show that one-fin D-FF designs are less vulnerable than similar two-fin D-FF designs under identical conditions

9:55 AM – 10:25 AM

Broadway Ballroom

BREAK

SESSION B

Grand Ballroom 2-3

HARDNESS ASSURANCE: PIECE PARTS TO SYSTEMS AND TESTING APPROACHES

10:25 AM

SESSION INTRODUCTION

Chair: Rebekah Austin (NASA Goddard Space Flight Center)

B-1

10:30 AM

A Survey of Depth-Parameter Selection in Upset-Rate Calculations

D. Hansen1, B. Kimbrell1, T. Manich1, C. Pownell1, I. Zavatkay1

  1. L3 Harris, USA

This paper reviews guidelines for depth parameter selection in rate calculation and compares them to published on-orbit data. Current guidelines result in underestimates for some modern devices.

B-2

10:45 AM

Dynamic Time Warping for ASET Cluster Analysis

J. Carpenter1, D. Loveless1, A. Ildefonso1, J. Hales2, D. Mcmorrow2, T. Peyton1, S. Westfall1, J. Lazenby1

  1. Indiana University, USA
  2. NRL, USA

Dynamic time warping (DTW) is used to analyze ASETs, enabling discrimination based on radiation source, LET, and strike location. Heavy-ion and laser-QBB data show that DTW enables cross-source correlation while enhancing insight into circuit behavior.

B-3

11:00 AM

Scaling Factors for Single Event Upsets with High Error Counts

P. Oldiges1, N. Domme1, R. Zedric1

  1. Sandia National Laboratories, USA

We perform an analysis of multiple single events in individual bits of memory during SEU testing.  Large numbers of multiple strikes can be accounted for, even with asymmetry in the logic state upset cross-section.

B-4

11:15 AM

PEARCE: Pulsed Electrons for Alternative Radiation Effects Characterization of Electronics

G. Tzintzarov1, J. Teng1, A. Kulkarni2, A. Bushmaker1, P. Musumeci2, M. Looper1, D. Daniel1, M. Voegtle1, R. Berry3, S. Milton4, G. Allen5

  1. The Aerospace Corporation, USA
  2. UCLA, USA
  3. RadiaBeam, USA
  4. Tau Systems, USA
  5. NASA JPL, USA

Development of SEE testing using pulsed electrons is discussed. The Thorlabs FDS010 photodiode is used as a vehicle to compare electron tests, heavy-ion tests, and simulation. Results support the future use of such beams.

B-5

11:30 AM

SEU cross-section predictions in 3nm FinFET using an advanced charge transport model

S. El hajji1, G. Gasiot1, T. Thery1, V. Correas1, N. Pieper2, Y. Xiong2, J. Kronenberg2, J. Autran3, B. Bhuva2, D. Pandini4, V. Malherbe1, P. Roche1

  1. STMicroelectronics, France
  2. Vanderbilt University, USA
  3. Univ Rennes, CNRS, IPR (Institut de Physique de Rennes) – UMR 6251, France
  4. STMicroelectronics, Italy

A fast 3D Poisson equation solver optimized for FinFET architectures has been integrated into the TIARA simulation platform. SEU predictions of a 3nm FinFET flip-flop exposed to heavy ions are made and compared with experiments.

B-6

11:45 AM

Implications of Ion Fragmentation for High-Energy Heavy Ion Single Event Effects Testing

R. Garcia Alia1, M. Sacristan Barbero2, D. Lucsanyi2, A. Waets1, K. Bilko1, M. Cecchetto1, M. Delrieux1, N. Emriskova3, D. Prelipcean1, I. Slipukhin1, D. Soderstrom1, F. Ravotti1, L. Esposito1, F. Cerutti1, S. Gilardoni1, M. Sivertz4, S. Kodaira5, F. Saigné6

  1. CERN, Switzerland
  2. Univ. Montpellier, CERN, Switzerland
  3. CERN, Univ. Montpellier, Switzerland
  4. NSRL-BNL, USA
  5. National Institutes for Quantum Science and Technology (QST), Japan
  6. Université de Montpellier, France

We extend the fragmented SEE benchmark to include additional ions (beyond lead) and effects (beyond SEU) and apply the same simulation framework to estimate the beam contaminant impact on ground-based high-energy SEE measurements

12:00 PM – 2:15 PM

LUNCH ON YOUR OWN

OR

WOMEN IN ENGINEERING LUNCHEON (Ticket Required)

SESSION C

Grand Ballroom 2-3

PHOTONIC DEVICES AND INTEGRATED CIRCUITS

2:15 PM

SESSION INTRODUCTION

Damien Lambert (CEA)

C-1

2:20 PM

Very Low to High Dose Rate Irradiation Response of a Single-Mode Optical Fiber at Telecom Wavelengths

M. Roche1, H. Boiron2, T. Maraine3, E. Marin4, A. Meyer5, D. Lambert6, P. Paillet6, J. Boch3, F. Saigné3, A. Morana4, Y. Ouerdane7, A. Boukenter4, S. Girard7

  1. Laboratoire Hubert Curien – CEA DAM, France
  2. Exail, France
  3. Université de Montpellier, France
  4. Laboratoire Hubert Curien, France
  5. Université Jean Monnet, France
  6. CEA, France
  7. Université de Saint Etienne, France

We investigate the growth kinetics of the radiation induced attenuation of 25-km long commercial Ge-doped optical fiber coils during a long-term gamma irradiation at different very low dose rates.

C-2

2:35 PM

Analysis of Optical and Electrical Single-Event Transients in Integrated Silicon Photonic Micro-Ring Modulators

B. Ringel1, P. Francis1, J. Teng2, M. Hosseinzadeh1, D. Sam1, Z. Brumbach1, J. Shin1, A. Ildefonso3, A. Khachatrian4, D. Mcmorrow4, J. Hales5, T. Crane5, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Department of Intelligent Systems Engineering, Indiana University, USA
  4. US Naval Research Laboratory, USA
  5. Jacobs, Inc. and U.S. Naval Research Laboratory, USA

The SET response of MRMs is evaluated following carrier injection by laser pulses. Optical signals experience transient phenomena plausibly due to carrier and temperature changes. MRMs exhibit SET sensitivity potentially relevant for harsh environment operation.

C-3

2:50 PM

Characterization of Single-Event Effects in Integrated Electronic-Photonic Optical Transceivers for Space-based Communications

M. Hosseinzadeh1, J. Teng2, B. Ringel1, Y. Mensah1, D. Sam1, Z. Brumbach1, A. Ildefonso3, T. Crane4, A. Khachatrian5, D. Mcmorrow5, J. Cressler1

  1. Georgia Institute of Technology, USA
  2. The Aerospace Corporation, USA
  3. Indiana University Bloomington, USA
  4. Jacobs, Inc., USA
  5. US Naval Research Laboratory, USA

An integrated optical transceiver in a silicon ePIC platform is exposed to pulsed-laser-induced TPA. SEE sensitivity of subsystems and the full-system is investigated, with a numerical model comparing link sensitivity to different propagating SET types.

C-4

3:05 PM

Low Temperature Proton Irradiation and Annealing Effects on Accumulation CCDs

A. Plocina1, V. Goiffon1, O. Marcelot1, S. Rizzolo2, D. Marchais2, O. Saint-pe2, J. Pratlong3

  1. ISAE-SUPAERO, France
  2. Airbus Defence and Space S.A.S., France
  3. Teledyne e2v, United Kingdom

This study reveals the impact of low temperature on-ground irradiation and annealing on pixel dark currents, activation energies and RTS pixels in silicon detectors, and compares these data to room temperature irradiation test results.

C-5

3:20 PM

Proton-Induced Displacement Damage in AlGaInAs on InP Multi-Quantum-Well Continuous Wave Laser Diodes

C. Bryant1, D. Huang2, K. Arnold1, H. Dattilo1, D. Fleetwood1, R. Schrimpf1, E. Zhang2, P. Harris1, J. Trippe1, M. Alles1, D. Ball1, S. Weiss1, P. Delfyett2, R. Reed1

  1. Vanderbilt University, USA
  2. University of Central Florida, USA

The threshold current and the emission wavelength of AlGaInAs-InP lasers change significantly with increasing proton fluence. The observed emission wavelength shift is attributed to defects located in the bandgap, rather than increases in series resistance.

3:35 PM

END OF TUESDAY SESSIONS

3:35 PM

Broadway Ballroom

AFTERNOON BREAK

5:30 PM – 7:00 PM

Broadway Ballroom

EXHIBITOR RECEPTION