7:15 AM

Grand Ballroom 1

Breakfast

INVITED TALK

8:30 AM – 9:30 AM

Grand Ballroom 2-3

SESSION D

Grand Ballroom 2-3

9:30 AM

D-1

9:35 AM

SEE and TID Resilient Vanadium Dioxide Phase Transition Material Millimeter-Wave Switches

Z. Brumbach¹, D. West¹, D. Sam¹, J. Shin¹, S. Dasari¹, G. Ashley¹, B. Ringel¹, J. Teng², P. Harris³, M. McCurdy³, R. Reed³, G. Allen⁴, N. Ghalichechian¹, J. Cressler¹

1. Georgia Institute of Technology, USA
2. The Aerospace Corporation, USA
3. Vanderbilt University, USA
4. JPL, USA

The effects of TID and SEE on vanadium dioxide (VO2) millimeter-wave switches were measured and analyzed. No evidence of the high-speed, low-loss VO2 switches changing states, or degrading was observed.

11:30 AM – 1:00 PM

Broadway Ballroom

1:00 AM – 1:30 PM

Broadway Ballroom

SESSION E

Grand Ballroom 2-3

1:30 PM

Analysis of High-Energy Heavy-Ion SEE Results Through Standard-Energy Ion SEE Data

M. Sacristan Barbero¹, R. Garcia², I. Slipukhin², D. Soderstrom², K. Bilko³, N. Emriskova², A. Waets², D. Prelipcean²

1. CIEMAT – CERN, Switzerland
2. CERN, Switzerland
3. Université Jean Monnet, France

This summary presents the results of several SEE measurements performed in two Single Event Effect testing facilities, such as CERN and NSRL. Besides, the results are compared to those obtained in another standard SEE facility like RADEF.

P-I-N diodes for Displacement Damage Monitoring in a Heavy ion Space Radiation Environment

D. Bennett¹, V. Pan¹, J. Vohradsky¹, L. Tran¹, D. Bolst¹, K. Aoki², T. Nakaji², H. Mizuno², H. Takei², T. Inaniwa², I. Anokhin³, M. Lerch¹, M. Petasecca¹, A. Rosenfeld¹

1. University of Wollongong, Australia
2. Quantum Science Technology, Japan
3. Institute for Nuclear Research, Ukraine

 

We’ve demonstrated that a newly developed p-i-n diode’s response is proportional to displacement damage dose, is energy and ion type independent and can be used as a damage monitor in a mixed space radiation environment.

Advancing Radiation Hardness Assurance at CERN: Improved HEH Sensors for Enhanced Radiation Monitoring and Reliability System Study

A. Zimmaro¹, R. Ferraro¹, S. Fiore¹, A. Masi², S. Danzeca²

1. CERN, France
2. CERN, Switzerland

This paper presents a study of a new radiation sensor embedded in the new wireless IoT radiation monitoring system for electronics. Its advantages in terms of measurement uncertainty and radiation tolerance are presented

Enhancing Performance of Optical Fiber-Based Sensor for Proton Dosimetry Through Pre-Irradiation Treatment

F. Fricano¹, A. Morana¹, C. Hoehr², C. Campanella¹, C. Bélanger-champagne², M. Trinczek², G. Melin³, T. Robin⁴, D. Lambert⁵, A. Boukenter¹, E. Marin¹, Y. Ouerdane¹, P. Paillet⁵, S. Girard⁶

1. Laboratoire Hubert Curien, France
2. TRIUMF, Canada
3. iXblue, France
4. EXAIL, France
5. CEA, France
6. Université de Saint Etienne, France

We compare the performances of nitrogen doped silica-based optical fibers, one pristine and one pre-irradiated to monitor proton beams. Pre-irradiation results in sensitivity enhancement and improvements in Bragg peak reproduction, limiting quenching effect.

2:35 PM

Grand Ballroom 2-3

2:50 PM – 4:50 PM

PA-1    The Research on 22 nm UTBB-FDSOI SRAM MCUs with Staggered Well under Back-Bias of 0 V

L. Tongde¹, Z. Yuanfu², Z. Yong-qin¹, Y. Jing-shuang¹, A. Paccagnella³, W. Liang¹

1. Beijing Microelectronics Technology Institute, China
2. China Academy of Aerospace Electronics Technology, China
3. University of Padua, Italy

This paper investigated the MCU characteristics of nano-scale FDSOI SRAM under different incident directions and angles. According to the experimental and numerical simulation results, the charge collection mechanisms were discussed.

 

PA-2    Neutron-induced Single Event Effects in 3D Managed NAND Memories

D. Peyronel¹, G. Lama¹, M. Valla¹, M. Kastriotou², C. Cazzaniga², M. Bagatin³, S. Gerardin⁴

1. Micron Semiconductor Italia Srl, Italy
2. STFC, United Kingdom
3. University of Padova, Italy
4. DEI – Padova University, Italy

The sensitivity of 3D managed NAND Flash memories to atmospheric spectrum neutrons has been investigated, with a focus on the functional elements that lead to single event functional interrupts and user data corruption.

PA-3    Versal ACAP AI Engine Heavy Ion Testing with Spill Synchronization

Price¹, G. Smith¹, M. Wirthlin¹

1. Brigham Young University, USA

This work presents the heavy ion of the AI/ML engines within the Versal Core and Edge series devices. This approach tests the hundreds of AI engines within these devices simultaneously and synchronously with beam spills.

PA-4    The Effect of Heavy Ions on Inference Accuracy on the IBM NorthPole

F. Viramontes¹, V. Vergara², A. Romero¹, M. Spear³, W. Slater³, H. Quinn³

1. UNM COSMIAC, USA
2. Blue Halo, USA
3. Air Force Research Laboratory, USA

This abstract covers a heavy-ion test that was recently performed on the IBM NorthPole. SEFI and SEU cross sections of the device are discussed, as well as the effect of heavy-ions on AI/ML inference accuracy.

PA-5    Input and Clock State Dependence of D-FF SEU Vulnerability at 3-nm Bulk FinFET Node

J. Kronenberg¹, N. Pieper¹, Y. Xiong¹, D. Ball¹, B. Bhuva¹

1. Vanderbilt University, USA

SERs for D-FFs in a 3-nm technology show differences based on stored data, indicating state-dependent Qcrit values. Simulations show differences in charge collection by n- & p-hits, and design asymmetry are primary factors determining state-dependent SERs.

PA-6    Charge Generation Correlation in Silicon PN Diodes for Heavy Ions vs. Two-Photon Absorption

R. Rodriguez-Davila¹, A. Carillo-Osuna¹, T. Moise¹, B. Gnade¹, R. Baumann¹, M. Quevedo-Lopez¹

1. The University of Texas at Dallas, USA

Bessel-focusing two-photon absorption (TPA) in silicon diodes accurately simulates the effects of heavy ion radiation, offering a cheaper and more accessible alternative for evaluating single event effects in semiconductor devices.

PB-1    Novel Statistical Method for Quantifying the Uncertainty on the Measurement of Single Event Effects

N. Rostand¹, A. Losquin¹, T. Jarrin¹, O. Duhamel¹, J. Rebourg¹

1. CEA, France

We develop a novel statistical method providing guarantee on the uncertainty on the number of Single Event Effects measured during experiments. Comparison with the literature is exposed through SEU/SET experimental data on elementary electronic cells.

PB-2    Bounding SEL Rates for Null Results and Other Limited Test Data

R. Ladbury¹, M. Joplin¹, J. Lauenstein¹

1. NASA Goddard Space Flight Center, USA

We exploit trends observed in historical archives of SEL test data to develop methods for bounding SEL rates based on null heavy-ion test results and other minimally constraining test data.

PB-3    Principles for Selecting Pulsed-Laser Operating Parameters to Predict Heavy-Ion SEE Response

A. Ildefonso¹, J. Hales², D. Mcmorrow²

1. Indiana University Bloomington, USA
2. U.S. Naval Research Laboratory, USA

This work establishes quantitative principles for determining when a pulsed-laser test configuration can predict ion-induced single-event effects. Validated experimentally, these principles provide a systematic framework for assessing the ability of any surrogate test approach to be predictive.

PB-4    Error Pattern Analysis of Commercial Ferroelectric RAM under Total Ionizing Dose Effects

M. Ahmed¹, J. Bell¹, A. Brandl¹, B. Ray¹

1. Colorado State University, USA

Commercial FeRAM exhibits data corruption from 50 krad(Si), with an overall error rate (~0.01%) at 500 krad(Si). Errors are asymmetric, with stored ones experiencing significantly more bit-flips than stored zeros.

 

PC-1    Total ionizing dose effects on a PbS-QD-based CMOS direct-conversion X-ray image sensor

C. Zhang¹, V. Goossens², A. Neyret³, R. Quaglia¹, V. Goiffon³, A. Shulga², P. Rüedi¹

1. CSEM SA, Switzerland
2. QDI Systems, Netherlands
3. ISAE-SUPAERO, France

This work presents the first observation of ionizing radiation effects on the first PbS-QD-coated CMOS X-ray image sensor from the evolution of dark current, X-ray sensitivity, spatial resolution, and X-ray imaging capability under X-ray irradiation.

PC-2    Dark Current and Random Telegraph Signal Degradation Induced by Proton Radiation in a Long-Wave HgCdTe Infrared Sensor

T. Friess¹, E. De Borniol², A. Antonsanti³, N. Baier², A. Rouvie⁴, A. Le Roch⁴, V. Goiffon³, S. Rizzolo⁵, O. Gravrand²

1. CNES / CEA Leti / ISAE Supaero / Airbus DS, France
2. CEA Leti, France
3. ISAE-SUPAERO, France
4. CNES, France
5. Airbus Defence and Space S.A.S., France

Dark current and Random Telegraph Signal degradations were analyzed in an HgCdTe Long-Wave InfraRed (LWIR) sensor after proton irradiation. The evolution of those mechanisms was evaluated after different annealing temperatures.

PC-3    Bias and Geometry Dependent Ionization Effects on Waveguide-Integrated Germanium-Silicon Vertical p-i-n Photodiodes

A. Veluri¹, K. Arnold¹, S. Musibau², A. Tsiara², K. Croes², D. Linten², J. Vancampenhout², S. Kosier¹, R. Schrimpf¹, D. Fleetwood¹, R. Reed¹, S. Weiss¹

1. Vanderbilt University, USA
2. imec, Belgium

We investigated ionization effects on Ge-Si VPIN photodiodes under 10-keV X-ray irradiation. Localized P+ doping shows 75% higher dark current sensitivity, while smaller Ge width shows stronger bias-dependent increase. Fast room-temperature recovery confirms space-based viability.

PC-4    Fundamental Mechanisms of Total-Ionizing-Dose Response in Waveguide-Coupled Ge-on-Si PIN Photodiodes

S. Musibau¹, K. Arnold², A. Veluri², A. Tsiara³, J. Franco³, K. Croes³, D. Linten³, J. Van campenhout³, S. Weiss², R. Schrimpf², D. Fleetwood², S. Kosier², I. De wolf¹, R. Reed²

1. imec and KU Leuven, Belgium
2. Vanderbilt University, USA
3. imec, Belgium

Calibrated TCAD simulations of total-ionizing-dose effects in vertical Ge-on-Si photodiodes reveal dominant charge trapping at top-corner Ge/SiO2 interfaces, enhancing local electric fields, Shockley-Read-Hall generation/recombination rates and trap-assisted tunneling currents.

PC-5    Radiation Reliability of the White LEDs of the MMX mission on Phobos

L. Weninger¹, G. Ciachera¹, M. Darnon¹, A. Morana¹, F. Fricano¹, V. Lalucaa², J. Belloir², C. Durnez², C. Virmontois², N. Kerboub², J. Mekki², Y. Morilla³, P. Martin Holgado³, A. Romero Maestre³, M. Gaillardin⁴, O. Duhamel⁴, P. Paillet⁴, S. Girard⁵

1. Laboratoire Hubert Curien – UJM, France
2. CNES, France
3. Centro Nacional de Aceleradores (CNA), Spain
4. CEA, France
5. Université de Saint Etienne, France

This work presents the results on the external quantum efficiency degradation under various ionizing radiations of the white LEDs selected for the illumination system of the cameras of the MMX mission rover on Phobos.

PD-1    TID-Induced Degradation in 3-nm FinFET SRAM Cell Retention

N. Pieper¹, J. Kronenberg¹, Y. Xiong¹, J. Pasternak², D. Ball¹, B. Bhuva¹

1. Vanderbilt University, USA
2. Synopsys, Inc., USA

TID-induced degradation in SRAM cell stability is measured in a commercial 3-nm bulk FinFET node. TID-induced increases in data retention voltages for 3-nm cells are observed to be greater than that for 5-nm SRAM cells.

PD-2    Evidence for Single-Particle Displacement Damage in 14-nm FinFET SRAMs

Y. Xiong¹, J. Kronenberg¹, J. Xiong², J. D’amico², A. Vidana², N. Pieper¹, G. Vizkelethy², N. Dodds², N. Nowlin², B. Bhuva¹

1. Vanderbilt University, USA
2. Sandia National Laboratories, USA

Experiments on 14-nm FinFET SRAMs reveal that single-ion-induced displacement damage causes stuck memory bits in 1-fin bitcell designs, but not in 2-fin bitcell designs. Failure mechanisms are identified and discussed using experimental results and simulations.

PD-3    Strategic Input Selection For Deep Neural Networks Reliability Evaluation

L. Roquet¹, F. Fernandes dos Santos¹, M. Kastriotou², A. Kritikakou¹

1. IRISA/Inria Rennes, France
2. ISIS Neutron and Muon Source, United Kingdom

We present a robust methodology for selecting inputs for DNNs in radiation experiments. Using our approach, we obtained a 12.19× higher DNN misclassification rate on average compared to the commonly used random input selection.

PD-4    Degradation of Charge Transport in Irradiated FDSOI Devices at Cryogenic Temperatures

F. Mamun¹, M. Spear², J. Solano³, J. Neuendank¹, M. Turowski⁴, H. Barnaby¹, I. Esqueda¹

1. Arizona State University, USA
2. Airforce Research Lab, USA
3. MOOG Space and Defense, USA
4. Alphacore Inc, USA

This work establishes the impact of radiation on the transport properties of FDSOI devices at cryogenic temperatures. A quasi-ballistic transport model reveals bias-dependent degradation in mobility attributed to charge buildup in the buried oxide.

PD-5    To Explore the Future of Quantum ICs for Space applications: A Study on Cryogenic Behavior of X-ray Irradiated 22nm FD-SOI MOSFETs

J. Zhao¹, Y. Qing¹, Z. Li², M. Gorbunov², Q. Ma¹, L. Marien¹, M. Zhang¹, T. Maraine³, F. Saigné³, J. Prinzie¹, P. Leroux¹

1. KU Leuven, Belgium
2. IMEC, Belgium
3. Université de Montpellier, France

This study explores 22-nm FD-SOI MOSFETs under X-ray irradiation at 20 K. NMOSFETs recover, but PFETs show increased Vth. A transimpedance amplifier analysis highlights radiation challenges for quantum ICs in space applications.

PD-6    Investigation of the Degradation Mechanism of LDMOS Under Electromagnetic Pulse

S. Guan¹, Y. Wu², L. Shu², F. Liu², H. Zhang¹, X. Wei¹

1. Beijing University of Posts and Telecommunications, China
2. Institute of Microelectronics of China Academy of Sciences, China

This work investigates Electromagnetic Pulse(EMP) damage mechanisms in LDMOS transistors for varying conditions. Neural networks and electromagnetic leakage signal have been used to achieve damage classification of LDMOS with EMP.

PD-7    Ionizing Dose Effects on DNA Data Storage Nanoplatforms

L. Sala¹, K. Cardos¹, V. Olšanský², D. Chvátil², F. Chevalier³, V. Vizcaino³, A. Méry³, J. Kočišek¹

1. J. Heyrovsky Institute of Physical Chemistry of the CAS, Czech Republic
2. Nuclear Physics Institute of the CAS, Czech Republic
3. Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, France

DNA origami nanoplatforms for data storage were exposed to ionizing radiation to identify structural vulnerabilities. This analysis contributes to optimizing these nanoplatforms and advancing methods to enhance data integrity and long-term preservation.

PE-1     Space Weather Launch Commit Criteria Study for Heavy Ion Susceptible Avionics

A. Destefano¹, J. Martin²

1. NASA, USA
2. Amentum, USA

In this work, we study the effectiveness of a space weather launch commit criteria based on proton fluxes on mitigating risk due to avionics that are susceptible to heavy ions.

PE-2     Comparison of Active and Passive Adjustment of the Entrance Energy of Synchrotron Ions for Single Event Effect Testing

M. Eizinger¹, W. Treberer-treberspurg², P. Schieder², A. Hirtl³, B. Seifert¹

1. Fotec Forschungs- und Technologietransfer GmbH, Austria
2. University of Applied Sciences Wiener Neustadt, Austria
3. Atominstitut, TU Wien, Austria

We compare two methods for varying the Bragg peak depth of carbon ions in silicon. Inserting passive degraders achieves finer resolution compared to variation of the initial energy, at the cost of stronger parasitic effects.

PE-3     Quenching Corrections for Proton-Irradiated Scintillators Using Geant4 Simulations of LET

E. Auden¹, J. George¹, A. Hoover¹, C. Delzer¹, G. Riley¹, F. Liang¹, T. Espinoza¹

1. Los Alamos National Laboratory, USA

Proton quenching effects in scintillators reduce light output similar to charge collection effects for high density particle tracks in silicon devices. We compare experimental and Monte Carlo quenching results in YSO and discuss quenching parameterization.

PE-4     Radiation Detection Based on Transient Non-equilibrium Body Potential under SOI-SBFETs Configuration

T. Zhang¹, F. Liu¹, L. Shu¹, S. Chen¹, Y. Huang¹, Y. Wu¹, J. Wan², Y. Xu³, Y. Ding⁴, B. Li¹, Z. Han¹, T. Ye¹

1. The Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China, China
2. School of Microelectronics, Fudan University, China
3. School of Microelectronics, Nanjing University of Posts and Telecommunications, China
4. China Institute of Atomic Energy, China

A new transient method has been adapted to detect γ-ray. This method relies on non-equilibrium body potential, which shows advantages in fast testing, low process cost, and simple data processing.

PE-5     A Method for Low-Cost Cold Total Ionizing Dose Dosimetry and Irradiation

S. Katz¹

1. Johns Hopkins University Applied Physics Laboratory, USA

Irradiating samples on dry ice in an insulated box reduces the complexity, expense of, and space required for cold radiation testing of electronics. Polyethylene simulant allows dosimetry at room temperature prior to irradiation.

PF-1     TID Degradation Mechanisms in Gate-All-Around Silicon Nanowire FETs

C. Champagne¹, D. Ball¹, J. Trippe¹, R. Ritzenthaler², J. Mitard², D. Linten², L. Massengill¹, S. Kosier¹, R. Reed¹, E. Zhang³, M. Alles¹, S. Bonaldo⁴, D. Fleetwood¹, B. Sierawski¹

1. Vanderbilt University, USA
2. imec, Belgium
3. University of Central Florida, USA
4. University of Padova, Italy

TCAD analysis of the contributions of gate and spacer oxides to the measured TID response of nanowire FETs indicates that the gate oxide is a significant degradation driver. Results are com-pared with previous technology nodes.

PF-2     An Implicit Radiation-Aware Surface Potential Model for FDSOI CMOS Technologies

I. Livingston¹, I. Esqueda¹, H. Barnaby¹, M. Spear¹, J. Solano¹, T. Wallace¹

1. Arizona State University, USA

An implicit defect-based surface potential model is presented for fully-depleted silicon-on-insulator MOSFETs. The accuracy of this model is compared to experimental data on devices from a commercial 22nm FDSOI process after total ionizing dose exposure.

PG-1    Impact of Hot-Carrier Diffusivity on Single-Event Upsets in Highly Scaled FinFETs

J. Vielmette¹, D. Ball¹, J. Trippe¹, G. Walker¹, M. Fischetti², D. Nielsen², M. Alles¹, K. Nagamatsu³, R. Schrimpf¹

1. Vanderbilt University, USA
2. University of Texas at Dallas, USA
3. Northrop Grumman Systems Corporation, USA

Sensitivity of charge collection in scaled finFET devices to the assumed thermalization rate of radiation-induced hot carriers is demonstrated. Full-band Monte Carlo simulations validate current approaches to simulating single-event effects using drift-diffusion tools

PG-2    Evaluation of Single-Event Effects on Sub-20nm FinFET based AI Chips

F. Shuanglin¹, L. Bin¹, W. Xun¹, C. Yaqing¹, C. Jianjun¹, L. Deng¹, Y. Guofang¹

1. College of Computer Science and Technology, National University of Defense Technology, China

Through results of heavy-ion and laser pulse testing, the Single-Event Effect (SEE) performance of neural network algorithms on sub-20nm AI chips was summarized, and the characteristics of SEE were revealed.

PH-1    System-Level SEU Hardening of Wireless Receivers through Modulation Scheme Selection

J. Shin¹, J. Teng², Z. Brumbach¹, B. Ringel¹, D. Sam¹, A. Ildefonso³, T. Crane⁴, A. Khachatrian⁵, D. Mcmorrow⁵, J. Cressler¹

1. Georgia Institute of Technology, USA
2. The Aerospace Corporation, USA
3. Indiana University Bloomington, USA
4. Jacobs, Inc., USA
5. US Naval Research Laboratory, USA

Pulsed-laser SEE testing is utilized to evaluate SEU-hardening of a SiGe wireless receiver through modulation scheme selection. Results demonstrate that intentionally selecting modulation schemes based on known component sensitivity can reduce system-level SEU rates.

PH-2    Total Dose Hardening Using a Sensitive Circuit Identification Methodology in a DC-DC Converter

M. Murillo¹, R. Milner², B. Dean¹, J. D’amico¹, T. Tengberg², A. Witulski¹, M. Alles¹, S. Kosier¹, J. Trippe¹, T. Holman¹, D. Ball¹, M. Hu¹, A. Fayed², L. Massengill¹

1. Vanderbilt University, USA
2. The Ohio State University, USA

Data-calibrated models of TID effects were used to simulate radiation effects in a DF-SIMO buck converter. Through this, a method of “sensitive circuit” identification was developed to efficiently simulate TID effects mitigation.

PH-3    Optimized Dynamic Back-Biasing Strategy to Improve TID Tolerance in Conventional-Well 22nm FDSOI Transistors

B. Dean¹, M. Hu¹, T. Haeffner², J. Kauppila², M. Alles¹, J. Trippe¹, D. Ball¹, B. Sierawski¹, T. Holman¹, S. Kosier¹, L. Massengill¹

1. Vanderbilt University, USA
2. Reliable MicroSystems, USA

An optimizable back-biasing strategy for TID mitigation is presented based on 22nm FDSOI transistor data obtained with in situ back-bias variation, resulting in a calculated maximum survivable dose increase of over 35%.

PI-1      Single Ion-Induced Damage in Gallium Nitride High Electron Mobility Transistors

J. Gray¹, A. Sternberg¹, J. Kauppila², D. Ball¹, J. Trippe¹, S. Kosier¹, A. Witulski¹, M. Alles¹, J. Davidson¹, R. Schrimpf¹, L. Massengill¹

1. Vanderbilt University, USA
2. Reliable MicroSystems, LLC, USA

Ion-induced damage leading to increased leakage current and hard failures in gallium nitride transistors are reported. Leakage current paths are identified using failure analysis and TCAD simulations.

PI-2      Estimating SELC and SEB Thresholds in SiC Power Devices Using Standard Benchtop Switching Energy Measurements

D. Ball¹, S. Kosier¹, K. Galloway¹, A. Witulski¹, A. Sternberg¹, S. Islam¹, A. Sengupta¹, M. Alles¹, J. Hutson², R. Reed¹, J. Osheroff³, R. Schrimpf¹

1. Vanderbilt University, USA
2. Lipscomb University, USA
3. NASA Goddard Space Flight Center, USA

Switching energy measurements are used to estimate ion-induced leakage and burnout thresholds in SiC power devices, while the non-linear, ion-induced carrier mobility degradation is shown to explain SELC/SEB threshold trends seen in measured data

PI-3      Impact of Proton Energy on Displacement Damage and Total Ionizing Dose in SiC Vertical Power MOSFETs

C. Martinella¹, S. Bonaldo², M. Belanche¹, R. Kupper¹, G. Andreetta², M. Bagatin², S. Gerardin³, A. Paccagnella², U. Grossner⁴

1. APS Laboratory – ETH Zurich, Switzerland
2. University of Padova, Italy
3. DEI – Padova University, Italy
4. APS – ETH Zurich, Switzerland

DD and TID have been studied in SiC power MOSFETs with 1 and 3 MeV protons. Deep-level transient spectroscopy (DLTS) has been used to investigate the generation of defects in 4H-SiC wafers.

PI-4      Neutron SEE Test Considering Actual EV Operating and Environment for Commercial 1200V SiC MOSFET

M. Jo¹

1. QRT Inc., Korea, Republic of

We performed neutron SEE tests with reflecting conditions driving distance and driving environment for EVs.