2026 IEEE NSREC TECHNICAL PROGRAM
SESSION C SCHEDULE
PUERTO RICO CONVENTION CENTER, SAN JUAN, PR
TUESDAY, JULY 21, 2026
SESSION C
Ballroom A
PHOTONICS DEVICES AND INTEGRATED CIRCUITS
2:15 PM
SESSION INTRODUCTION
Chair: Julien Mekki (CNES)
C-1
2:20 PM
Dose Rate and Temperature Effects on the Radiation-Induced Attenuation of H2-loaded Ge-doped Optical Fibers
A. Morana1, S. Acid1, E. Marin1, A. Boukenter1, Y. Ouerdane1, S. Girard1
1. Université de Saint-Etienne, France
We study the dose-rate effect on the RIA of H2-loaded Ge-doped fibers up to a dose of 100 kGy, to better understand the influence of the molecular hydrogen, that seems to stabilize the defects.
C-2
2:35 PM
Real time Responses of COTS Optical Fibers exposed to X-Ray Pulses
M. Roche1, O. Duhamel1, D. Lambert1, M. Gaillardin2, S. Girard3, P. Paillet1
1. CEA/CESTA, France 2. CEA/Gramat, France 3. Université de Saint-Etienne, France
We investigate the transient responses of commercial off-the-shelf (COTS) optical fibers under pulsed X-rays with high dose rate. We highlight a large diversity of the fiber response due to different doping strategies.
C-3
2:50 PM
Gamma Irradiation Total-Ionizing and Displacement Damage Effects in a Quanta Image Sensor
J. Krynski1,2, A. Salih-Alj1, A. Le Roch2, V. Bernard2, V. Lalucaa2, C. Virmontois2, V. Goiffon1
1. ISAE-SUPAERO, France 2. CNES, France
A gamma irradiation campaign on a photon-counting image sensor reveals a degradation in noise characteristics and appearance of point defects. Many pixels’ dark currents are reduced after gamma exposure, showing a unexpected susceptibility to TID. – BREAK
C-4
3:35 PM
Radiation Effects on Nanocrystal-Based Logarithmic Short Wavelength Infrared Image Sensor
A. Neyret1-4, P. Giudicelli-Vernet1,3, S. Demiguel2, S. Masseno1, J. Belloir3, E. Lhuillier4, V. Goiffon1
1. ISAE-SUPAERO, France 2. Thales Alenia Space, France 3. CNES, France 4. INSP CNRS – Sorbonne Université, France
Radiation effects on Lead Sulfide nanocrystal-based short-wavelength infrared open pixel logarithmic cameras are tested. Imaging performance and device characteristics are tracked upon proton irradiation, demonstrating ionizing and non-ionizing tolerance and suitability for space environments.
C-5
3:50 PM
Radiation-Induced Attenuation in Silicon Photonics Waveguides
D. Alfiero1, L. Olantera1, C. Scarcella1, S. Detraz1, J. Troska1
1. CERN, Switzerland
Attenuation changes in Si-photonics waveguides were characterized under displacement damage and ionizing doses relevant to high-energy physics experiments. All waveguide types showed increased attenuation; O-band waveguides were most sensitive, with 0.65dB/mm after 7×1015n/cm2 neutron fluence.
C-6
4:05 PM
Electrical vs. Optical Degradation due to Cumulative Dose in Vertical Phototransistors
B. Ringel1, J. Heimerl1, D. Sam1, M. Hosseinzadeh1, Q. Parker1, J. Teng2, J. Cressler1
1. Georgia Institute of Technology, USA 2. The Aerospace Corporation, USA
TID responses of vertical phototransistors based on SiGe-HBTs are evaluated following exposure using a 60Co source. Differences in electrical and optical degradation are observed, highlighting electrical-only analysis is not sufficient for hardness assurance of photodetectors.
POSTER SESSION C
PC-1
Total Ionizing Dose Effects on the Dark Count Rate in 110 nm CMOS SPADs
L. Ratti1, A. Burdyko2, M. Campajola3, G. Collazuol4, M. Da rocha rolo5, D. Falchieri6, G.
Fiorillo3, T. Floris1, F. Licciulli7, M. Mazziotta7, L. Pancheri8, L. Rignanese6, R. Santoro2, F. Shojaei1, C. Vacchi1 1. Università degli Studi di Pavia and INFN Pavia, Italy 2. Università degli Studi dell’Insubria and INFN Milano, Italy 3. Università degli Studi di Napoli Federico II and INFN Napoli, Italy 4. Università degli Studi di Padova and INFN Padova, Italy 5. INFN Torino, Italy 6. INFN Bologna, Italy 7. INFN Bari, Italy 8. Università degli Studi di Trento and INFN TIFPA, Italy SPADs fabricated in a 110 nm CMOS technology, with different active areas and quenching features, are irradiated with 10 keV X-rays up to a total ionizing dose of 10 Mrad(SiO2). Effects on DCR are investigated.
PC-2
Effects of annealing on Ga-Free T2SL Infrared Detector
H. Mezouar1, A. Michez2, M. Tornay3, C. Cervera4, P. Christol3
1. University of Montpellier, France 2. DELPHEA, France 3. University Of Montpellier, France 4. University of Grenobles-Alpes and CEA-LETI, France
In this paper, we investigate the effect of thermal annealing on Ga-free InAs/InAsSb type- II superlattice (T2SL) midwave infrared barrier photodetectors irradiated with 60 MeV protons at fluences up to 8×1011 H+/cm².
PC-3
Radiation-Induced Charge Collection Dynamics in Short-Wavelength P+-N Silicon Avalanche Photodiodes
N. Karom1, S. Ball1, E. Teo1, A. Veluri1, P. Harris1, M. Mccurdy1, R. Schrimpf1, D.
Fleetwood1, J. Trippe1, R. Nederlander2, R. Reed1, S. Weiss1 1. Vanderbilt University, USA 2. Aegis Aerospace, USA P+-N Si-APDs show significant gain decrease under alpha irradiation compared to optical excitation. Data analysis and TCAD simulations show this results from significant increases in carrier recombination relative to avalanche generation with increasing EHP density.
PC-4
8:30 AM
Total Ionizing Dose Effects on High-Speed Silicon Integrated Photonic Mach-Zehnder Modulators
K. Arnold1, N. Karom1, J. Slaby2, A. Veluri1, A. Kaylor2, A. Sternberg1, D. Ball1, R. Schrimpf1, D. Fleetwood1, S. Ralph2, R. Reed1, S. Weiss1
1. Vanderbilt University, USA 2. Georgia Institute of Technology, USA
Impacts of 10-keV X-ray irradiation on high-speed electro-optic response are observed in silicon Mach-Zehnder modulators. More than 50% electro-optic performance degradation is observed when devices are irradiated under active bias. Underlying ionization mechanisms are examined. The History of Puerto Rico and San Juan – INVITED SPEAKER SESSION D Radiation Effects in Devices and Integrated Circuits SESSION INTRODUCTION Chair: Corinna Martinella (University of Montpellier)