2026 IEEE NSREC TECHNICAL PROGRAM
SESSION F SCHEDULE
PUERTO RICO CONVENTION CENTER, SAN JUAN, PR
THURSDAY, JULY 23, 2026
SESSION F
Ballroom A
BASIC MECHANISMS OF RADIATION EFFECTS
8:45 AM
SESSION INTRODUCTION
Chair: Marta Bagatin (University of Padova)
F-1
8:50 AM
Investigation of Total Ionizing Dose-Induced Trap Density in 12-nm FinFET Technology Using 1/f Noise
K. Sapkota1, B. Tierney1, A. Vidana1, B. Dodd1, J. Neuendank1,2, R. Ghimire3, M. Spear3, H. Barnaby2, N. Nowlin1
1. Sandia National Laboratories, USA 2. Arizona State University, USA 3. Air Force Research Laboratory, USA
The 1/f noise level measured in GlobalFoundries 12-nm FinFETs increases with ionizing dose. The TID-induced traps near the silicon-oxide interface are estimated, and their behaviors for different threshold voltages are discussed.
F-2
9:05 AM
TID Response Comparison of Two 28-nm CMOS Technology Flavors: HPL vs. HPC+
G. Andreetta1, L. Gelmi2, E. Vallicelli3, M. De Matteis3, A. Lai4, A. Paccagnella1, S. Mattiazzo1, S. Bonaldo1
1. University of Padova, Italy 2. University of Pavia, Italy 3. University of Milano Bicocca, Italy 4. INFN Cagliari, Italy
Total ionizing dose (TID) is investigated by X-rays in two 28-nm CMOS technology flavors, HPL and HPC+. Differences in the TID sensitivity are found in short-channel devices.
F-3
9:20 AM
Displacement Damage Mitigation in Fully Isolated N and P-Type Pixel Microvolumes
A. Salih Alj1, V. Goiffon1, M. Bolin1, J. Carrere2, V. Malherbe2, C. Virmontois3
1. ISAE-SUPAERO, France 2. STMicroelectronics, France 3. CNES, France
We show that isolation trenches reduce displacement damage in silicon microvolumes by strongly reducing divacancy formation, based on dark current spectroscopy comparing gamma- and proton-irradiated trench photogates with trench-less vertical photodiodes.
F-4
9:35 AM
High-Field-Induced Recovery of TID-Induced Threshold Voltage Shifts in SiC MOSFETs
Z. Stone1, M. Hu1, D. Fleetwood1, J. Trippe1, S. Kosier1, R. Schrimpf1, D. Ball1, R. Cadena1, M. Alles1, L. Massengill1
1. Vanderbilt University, USA
Threshold-voltage recovery in TID-irradiated SiC MOSFETs by high-field stress is highly repeatable to 1 Mrad(SiO2) cumulative dose. We find that Fowler–Nordheim electron injection reversibly cycles oxide defects between charged and neutral states without progressive degradation.
F-5
9:50 AM
Low-Frequency Noise and Heavy-ion Radiation Effects in Enhancement-Mode GaN Power HEMTs
S. Shorina1, E. Zhang1, H. Parra1, A. Billa1, P. Maloney1, B. Bolton1, S. Hankinson1, H. Gingold1, J. Debnath1, S. Islam2, T. Liu2, J. Gray2, D. Fleetwood2, L. Massengill2
1. University of Central Florida, USA 2. Vanderbilt University, USA
Low-frequency noise in enhancement-mode power HEMTs increases after krypton irradiation, indicating radiation-activated trap generation near the channel and buffer layer. Nitrogen vacancy related defects are likely responsible for the increased noise.
POSTER SESSION F
PF-1
Dose Enhancement Effects in Nanometer-Scale Technologies
E. Wong1, B. Dodd1, C. Champagne1, D. Ball1, S. Kosier1, M. Hu1, R. Reed1, B. Sierawski1, D. Fleetwood1, R. Schrimpf1, J. Trippe1
1. Vanderbilt University, USA
Dose enhancement in nanometer-scale devices is quantified via Monte Carlo radiation- transport simulations of 22-nm FDSOI devices. Results are calibrated and compared via comparison with experimental data on structures having high-Z gate stacks.
PF-2
Electric-Field-Dependence of X-Ray TID-Induced Instabilities in Enhancement-Mode GaN HEMTs
A. Billa1, S. Shorina1, P. Maloney1, J. Debnath1, H. Parra1, B. Bolton1, E. Zhang1
1. University of Central Florida, USA
X-ray total ionizing dose effects in enhancement-mode GaN HEMTs are examined under different post-irradiation electric fields. Threshold-voltage shifts and recovery depend strongly on bias history, with TCAD simulations linking field distribution to charge trapping stability.
PF-3
Electrically detected magnetic resonance and near zero field magnetoresistance study of heavy ion irradiation in GaN pn junction diodes
D. Hassenmayer1, M. Elko1, P. Lenahan1
1. Penn State University, USA
Electrically detected magnetic resonance (EDMR) and near zero field magnetoresistance (NZFMR) measurements were utilized to detect atomic scale defects generated by heavy ion irradiation of GaN pn junction diodes at room temperature.
PF-4
Degradation mechanisms and radiation-induced material modifications in SiC power diodes
H. Goncalves de Medeiros1, N. Für1, A. Erlebach1, M. Belanche1, J. Reuteler1, K. Voss2, U. Grossner1
1. ETH Zurich, Switzerland 2. GSI, Switzerland
SELC and SEB degradation and their mechanisms in SiC power diodes are investigated through post-irradiation characterization with EDX, Ultraviolet-Visible Photoluminescence (UVPL), and Raman Spectroscopy. 3D-TCAD is employed to put the findings into perspective.
PF-5
Onset of Degradation in COTS SiC Power Diodes Exposed to High-Energy Proton Irradiation
N. Für1, H. Goncalves de Medeiros1, M. Nagel1, M. Kirchbaumer1, M. Belanche Guadas1, R. Kupper1, U. Grossner1
1. ETH Zürich, Switzerland
Based on high-energy (200 MeV) proton irradiation on COTS SiC power diodes, the impact of displacement-induced defect activation in radiation-induced damage and, in consequence, the limitations of standard derating practices are discussed.
PF-6
Investigation on Mechanism of Total Ionizing Dose Effects in Tin Oxide Field-Effect Transistors by Gamma-ray Irradiation
S. Kim1, H. Kim2, G. Jeon1, Y. Hwang1, R. Chung2, D. Kim1
1. Korea Atomic Energy Research Institute, Korea 2. Kyungpook National University, Korea
Total ionizing dose effects in SnO2 FETs were investigated using Co-60 gamma irradiation. The results revealed the dose-dependent correlation between pre-existing oxygen vacancies and radiation-induced electron-hole pairs, relating to the degradation of device performance.
PF-7
Field‑Assisted Charge Detrapping and Gain Recovering in a Standard NPN Bipolar Transistor
I. Lopez Calle1
1. European Space Agency (ESA), Netherlands
An intense electric field applied between collector and emitter accelerates charge detrapping and enables instantaneous gain recovery in irradiated bipolar COTS transistors. This approach supports hardness‑assurance methodologies and rapid in‑situ mitigation of bipolar COTS components.