Radiation Effects Steering Group

Dr. Pascale Gouker, MIT Lincoln Laboratory

Justin Likar, Johns Hopkins University Applied Physics Laboratory

Foyer & Terrace

Dr. Cristina Plettner, European Space Research and Technology Centre (ESTEC), Avionics

Ballroom B

Dr. David Hansen, L3Harris

Foyer & Terrace

Dr. Andrea Coronetti, The Exploration Company

For students requesting CEU credit only

For registered conference attendees

Philippe Paillet, CEA, General Chair

Kay Chesnut, RTX, Radiation Effects Steering Group, Executive Chair

Sylvain Girard, University of St Etienne, Technical Program Chair

9:05 AM Session Introduction · Chair: Jeffrey Warner (Northrop Grumman)

S. Islam1, P. Das2, D. Ball1, J. Speck3, E. Farzana2, D. Fleetwood1, R. Schrimpf1

1. Vanderbilt University, USA   2. Iowa State University, USA   3. University of California, USA

Vertical β-Ga₂O₃ diodes with engineered Pt/PtOₓ/thin-Pt Schottky contacts exhibit reduced turn-on voltage. Single-event burnout is experimentally evaluated on structures with and without field plates. TCAD analysis provides insight into the responsible mechanisms.

J. Park1, V. Shastry1, M. Breeding2, S. Yi1

1. Texas A&M University, USA   2. Sandia National Laboratories, USA

Effects of multi-soft-program on retention and single-event upset in 176-layer 3D charge- trap (CT) NAND flash are investigated, clarifying the influence of trap occupancy in the CT layer on retention characteristics and heavy-ion-induced threshold voltage loss.

J. Kronenberg1, S. Tolson1, X. Zhao1, Y. Xiong1, N. Pieper1, D. Ball1, B. Bhuva1

1. Vanderbilt University, USA

Angular single-event effects at 3- and 5-nm bulk FinFET nodes are presented. The relationship between angular incidence and SE vulnerability is explored as a function of technology scaling, critical charge, and particle LET.

P. Maloney1, A. Billa1, B. Bolton1, S. Hankinson1, S. Shorina1, H. Gingold1, J. Gray2, L. Massengill2, D. McMorrow3, D. Fleetwood2, E. Zhang1

1. University of Central Florida, USA   2. Vanderbilt University, USA   3. US Naval Research Laboratory, USA

Heavy-ion testing of enhancement-mode GaN HEMTs shows SELC and SEB thresholds depend strongly on incident angle and overlying metallization. SEM and SRIM reveal Cu interconnects amplify charge deposition, explaining reduced thresholds at near-normal incidence.

Level 1 – Exhibit Hall A

10:40 AM Session Introduction · Chair: Ruben García Alía (CERN)

X. Lu1, J. Debnath2, E. Zhang2, J. Xing1, C. Elash1, D. Ramaswami1, Q. Chen1, L. Chen1

1. University of Saskatchewan, Canada   2. University of Central Florida, USA

Angular heavy-ion SEU cross-sections were measured for 12-nm FinFET flip-flops at 0° and 60° across multiple LETs and fin orientations. Results show increased σSEU under tilt, demonstrating scaling-dependent worst-case conditions and limitations of normal- incidence testing.

M. Bagatin1, S. Beltrami2, A. Benvenuti2, A. Waets3, N. Emriskova3, R. Garcia3, S. Gerardin1

1. University of Padova, Italy   2. Micron Technology and Products Group, Italy   3. CERN, Switzerland

The effects of very-high-energy ions on 3D NAND Flash arrays are investigated. Cross sections at grazing angles, the spatial distribution, and clustering of radiation-induced errors are analyzed by exploiting the unique capabilities of high-energy beams.

M. Wagner1, F. Santos1, M. Traiola1, P. Rech2, A. Kritikakou1

1. INRIA, France   2. University of Trento, Italy

We present the first proton-irradiation campaign for a commercial processing-in- memory (PIM) AI accelerator executing end-to-end DNN inference. We report results from 10 DNN models and a microbenchmark, showing higher error criticality than conventional accelerators.

G. Mayberry1, X. Zhao2, H. Gingold3, P. Maloney3, S. Islam1, A. Sengupta4, X. Shen5, A. Senarath1, O. Meilander1, B. Zhang2, S. Hankinson3, B. Bolton3, W. Hubbard6, S. Kosier1, T. Roy2, E. Zhang3, D. Fleetwood1, S. Pantelides1, M. Ebrish1, R. Schrimpf1

1. Vanderbilt University, USA   2. Duke University, USA   3. University of Central Florida, USA   4. DLR, Germany   5. University of Memphis, USA   6. NanoElectronic Imaging, Inc., USA

High-voltage GaN and SiC vertical PiN diodes were tested for SEEs at similar voltages for a wide LET range. The lower SEE tolerance of GaN is attributed to lower defect- multiplication activation energies.

J. Gray1, S. Shorina2, J. Vielmette1, D. Ball1, E. Zhang2, P. Maloney2, H. Gingold2, B. Bolton2, S. Hankinson2, A. Billa2, H. Parra2, J. Trippe1, M. Alles1, S. Kosier1, D. Fleetwood1, R. Schrimpf1, L. Massengill1

1. Vanderbilt University, USA   2. University of Central Florida, USA

Heavy ion irradiation enhances leakage currents in GaN-based HEMTs. Experimental analysis confirms a permanent drain-to-source leakage path through the buffer layer under the gate, enabled by defect-assisted hopping.

C. Quiñones1, J. Osheroff2, P. Reddy3, S. Mita3, R. Kirste3, R. Collazo1, Z. Sitar1

1. North Carolina State University, USA   2. NASA Goddard Space Flight Center, USA   3. Adroit Materials, USA

Single-event burnout was observed in AlN Schottky barrier and p-n junction diodes under heavy-ion irradiation. Burnout thresholds decreased with increasing ion LET, similar to trends in other wide-bandgap semiconductors.

PRCC Level 1 – Exhibit Hall A · Young Professionals (YP) Luncheon at the Sheraton Hotel

2:15 PM Session Introduction · Chair: Julien Mekki (CNES)

A. Morana1, S. Acid1, E. Marin1, A. Boukenter1, Y. Ouerdane1, S. Girard1

1. Université de Saint-Etienne, France

We study the dose-rate effect on the RIA of H2-loaded Ge-doped fibers up to a dose of 100 kGy, to better understand the influence of the molecular hydrogen, that seems to stabilize the defects.

M. Roche1, O. Duhamel1, D. Lambert1, M. Gaillardin2, S. Girard3, P. Paillet1

1. CEA/CESTA, France   2. CEA/Gramat, France   3. Université de Saint-Etienne, France

We investigate the transient responses of commercial off-the-shelf (COTS) optical fibers under pulsed X-rays with high dose rate. We highlight a large diversity of the fiber response due to different doping strategies.

J. Krynski1,2, A. Salih-Alj1, A. Le Roch2, V. Bernard2, V. Lalucaa2, C. Virmontois2, V. Goiffon1

1. ISAE-SUPAERO, France   2. CNES, France

A gamma irradiation campaign on a photon-counting image sensor reveals a degradation in noise characteristics and appearance of point defects. Many pixels’ dark currents are reduced after gamma exposure, showing a unexpected susceptibility to TID. – BREAK

A. Neyret1-4, P. Giudicelli-Vernet1,3, S. Demiguel2, S. Masseno1, J. Belloir3, E. Lhuillier4, V. Goiffon1

1. ISAE-SUPAERO, France   2. Thales Alenia Space, France   3. CNES, France   4. INSP CNRS - Sorbonne Université, France

Radiation effects on Lead Sulfide nanocrystal-based short-wavelength infrared open pixel logarithmic cameras are tested. Imaging performance and device characteristics are tracked upon proton irradiation, demonstrating ionizing and non-ionizing tolerance and suitability for space environments.

D. Alfiero1, L. Olantera1, C. Scarcella1, S. Detraz1, J. Troska1

1. CERN, Switzerland

Attenuation changes in Si-photonics waveguides were characterized under displacement damage and ionizing doses relevant to high-energy physics experiments. All waveguide types showed increased attenuation; O-band waveguides were most sensitive, with 0.65dB/mm after 7×1015n/cm2 neutron fluence.

B. Ringel1, J. Heimerl1, D. Sam1, M. Hosseinzadeh1, Q. Parker1, J. Teng2, J. Cressler1

1. Georgia Institute of Technology, USA   2. The Aerospace Corporation, USA

TID responses of vertical phototransistors based on SiGe-HBTs are evaluated following exposure using a 60Co source. Differences in electrical and optical degradation are observed, highlighting electrical-only analysis is not sufficient for hardness assurance of photodetectors.

Hors d'oeuvres in the Exhibit Area; open to all NSREC attendees and their guests.

For registered conference attendees

The History of Puerto Rico and San Juan

9:30 AM Session Introduction · Chair: Corinna Martinella (University of Montpellier)

A. Vidana1, C. McKay1, D. Hughart1, T. Kirby1,2, N. Nowlin1, N. Dodds1, E. Zhang3, H. Barnaby2, D. Fleetwood4

1. Sandia National Laboratories, USA   2. Arizona State University, USA   3. University of Central Florida, USA   4. Vanderbilt University, USA

Electrical rapid annealing parameters are optimized to reverse TID-induced degradation in bulk FinFETs. Bulk-bias magnitude controls recovery rate dominated by tunneling- assisted charge neutralization, validated by low temperature experiments and TCAD simulations.

M. Kumar1, H. Ur Rahman1, I. Chatterjee2, B. Ray1

1. Colorado State University, USA   2. Airbus, Germany

This work performs total-ionizing-dose effects characterization of Quad-level-cell 3-D NAND flash, revealing data corruption at 5 krad(Si). We propose logical downscaling and optimized read to extend TID tolerance beyond 25 krad(Si).

H. Couillaud1, M. Gaillardin1, L. Artola2, G. Hubert2

1. CEA, France   2. ONERA, France

Physical mechanisms contribution underlying static electrical parameter instabilities in a COTS p-GaN HEMT with Schottky gate contact are analyzed, focusing on the combined impact of total ionizing dose and several bias conditions. 10:20 – BREAK

T. Liu1, H. Lee2, S. Islam1, E. Zhang3, R. Reed1, R. Schrimpf1, S. Rajan4, D. Fleetwood1

1. Vanderbilt University, USA   2. Texas Instruments, USA   3. University of Central Florida, USA   4. Ohio State University, USA

AlGaN/GaN FinFETs and otherwise similar planar devices were subjected to 1.8-MeV proton irradiation and 10-keV X-ray irradiation. FinFETs exhibit less degradation in threshold voltage and transconductance than planar devices as a result of enhanced gate control.

K. Niskanen1, A. Tallarico2, A. Javanainen1, A. Michez3, J. Boch4, F. Wrobel4, R. Germanicus5, H. Kettunen1

1. University of Jyväskylä, Finland   2. Università di Bologna, Italy   3. Delphea, France   4. Université de Montpellier, France   5. Université de Normandie, France

The effect of temperature on the heavy ion response of gallium nitride high electron mobility transistors is presented. An order of magnitude higher degradation rate is observed at 363 K compared to room temperature irradiation.

Y. Xiong1, A. Vidana1, N. Dodds1, B. Bhuva2, N. Nowlin1

1. Sandia National Laboratories, USA   2. Vanderbilt University, USA

SRAM stability is evaluated for PUF hardware authentication at a 14-nm bulk FinFET node. Results show TID significantly changes data retention voltages and power-on states of bitcells in high-performance designs but not in high-density designs.

Level 1 – Exhibit Hall A

11:35 AM Session Introduction · Chair: Cornelia Hoehr (TRIUMF)

L. Tran1, D. Miller1, S. George2, V. Pan1, J. Vohradsky1, D. Bennett1, S. Rozhdestvenskyy3, M. Povoli4, A. Kok4, S. Kodaira5, H. Kitamura5, T. Inaniwa5, L. Pinsky3, A. Rosenfeld1

1. University of Wollongong, Australia   2. NASA, USA   3. University of Houston, USA   4. SINTEF, Norway   5. National Institutes for Quantum and Radiological Science and Technology, Japan

SOI microdosimeter and TimePix responses were compared behind aluminium shielding of varying thicknesses to simulate astronaut exposure using 290MeV/u 12C, 400MeV/u Ne, 800MeV/u 28Si, and 650MeV/u 40Ar ions. Good agreement was observed.

S. Acid1,2, A. Morana2, I. Zghari3, M. Aubry4, N. Kerboub1, J. Guillermin4, J. Mekki1, Y. Ouerdane2, M. Darnon2, H. El Hamzaoui3, B. Capoen3, M. Bouazaoui3, A. Boukenter2, S. Girard2

1. CNES, France   2. Université de Saint Etienne, France   3. Université de Lille, France   4. TRAD, France

We demonstrate temperature calibrated radioluminescent dosimetry using pre-irradiated pure silica core optical fibers, achieving stable real-time dose-rate measurements under coupled temperature and dose-rate variations, with mean errors below 1.5%, validating feasibility for space radiation monitoring. – LUNCH at Level 1 - EXHIBIT HALL A

J. Hales1, A. Ildefonso2, T. Crane1, A. Khachatrian1, D. McMorrow1

1. US Naval Research Laboratory, USA   2. Indiana University Bloomington, USA

This work identifies solid-state detectors that exhibit transient responses which are strongly dependent on pulsed-laser operating parameters. Such standardized reference detectors are important for providing repeatability and traceability in surrogate single- event effects testing.

F. Fricano1, A. Morana2, Y. Ouerdane2, D. Lambert1, P. Paillet1, S. Girard2

1. CEA/CESTA, France   2. Université de Saint Etienne, France

The influence of fibers with different hydroxyl (OH) group contents, commonly used as transport fibers in dosimetry systems based on the radioluminescence of scintillating optical fibers, such as Ce3+-doped fibers, is evaluated.

M. Dong1, W. Chen1, Z. Zhang1, Y. Ouyang1, L. Cai1

1. Sun Yat-sen University, China

This work demonstrates a high-linearity radiation dosimeter using commercial 3D NAND. The dual-reference-level sampling technique achieves linearity above 0.9867 up to 35 krad(Si) with 3.0% maximum relative error, enabling accurate in-situ monitoring for aerospace applications.

Level 1 – Exhibit Hall A · Women in Engineering (WIE) Luncheon at the Sheraton Hotel

2:45 PM Session Introduction · Chair: Vincent Goiffon (ISAE-SUPAERO) · 2:50–4:50 PM

G. Smith1, M. Wirthlin1, M. Brigham1

1. Brigham Young University, USA

A methodology is presented for testing multiple processors and 18 memories simultaneously on the Versal ACAP during a proton irradiation test. Post-run fault analysis is performed to identify the root cause of all processor failures.

G. Qiao1, S. Feng1, G. Yu1, M. Tao2, Y. Chi1, J. Chen1, D. Luo1, J. Yang2, B. Liang1

1. National University of Defense Technology, China   2. Hunan University, China

Using software fault injection and pulsed laser experiments, this work analyzes ResNet50 failure behaviors under radiation, showing that combined structural and numerical constraints significantly enhance model robustness on AI chip.

P. Drum1, A. George1, M. Cannon2, A. Kumar2, N. Myers2, A. Tabaczynski2, D. Lee2, N. Matter2, P. Thelen2

1. University of Pittsburgh, USA   2. Sandia National Laboratories, USA

Heavy-ion tests were performed on the Versal Network-on-Chip to determine cross sections and common errors for two general-use designs. Common errors included correctable parity errors and packet misrouting errors.

J. Brown1, H. Allan1, J. Goeders1, M. Wirthlin1

1. Brigham Young University, USA

Fault injection and proton radiation testing of YOLO and ResNet models on the AMD Versal DPU reveal six failure modes, model-dependent error rates, and the predictive capability of fault injection

Z. Li1, S. Feng1, G. Yu1, M. Tao2, Y. Chi1, J. Chen1, D. Luo1, J. Yang2, Y. Liu1, F. Luo1, J. Mo1, B. Liang1

1. National University of Defense Technology, China   2. Hunan University, China

Pulsed laser and heavy-ion experiments are conducted on a Swin-Transformer-based edge tracking system. Different structural variants exhibit distinct SEFI/SEU occurrence characteristics, revealing structure-dependent reliability behaviors under radiation- induced single-event effects. – BREAK SESSION B SINGLE-EVENT EFFECTS: Devices and Integrated Circuits SESSION INTRODUCTION Chair: Ruben García Alía (CERN)

M. Gorbunov1, E. Timokhin1, J. Weijers1, M. Van de Burgwal1, L. Berti1, G. Thys1, T. Vervecken2, D. Van Nuffel2, T. Schulte2, J. Vanden Berk2, D. Geys2, S. Bounasser3, B. Glass3

1. IMEC, Belgium   2. Magics Technologies NV, Belgium   3. ESA, Netherlands

During the heavy-ion test campaign, we observed stuck bits in 7-nm FinFET SRAM blocks with certain bitcell types. The analysis and simulation results indicated that the microdose is the primary mechanism at typical fluence levels.

S. Zhao1, X. Li1, D. Zhang1, B. Li1, R. Tang1, Y. Gao1, C. Yang1, P. Lu2, L. Shu1, J. Bu1, J. Gao1

1. Institute of Microelectronics of the Chinese Academy of Sciences, China   2. Ocean University of China, China

The significant spatial heterogeneity of SEL characteristics is revealed in a 14-nm FinFET multi-core SoC through heavy-ion and pulsed-laser experiments. A differentiated hardening strategy linking sensitivity to body-tie distance is proposed to provide design guidance.

A. Hubbard1, A. Murali2, H. Hunnicutt1, T. Peyton1, B. Ray2, A. Ildefonso1, D. Loveless1

1. Indiana University Bloomington, USA   2. Colorado State University, USA

Heavy‑ion testing on 65‑nm MirrorBit SONOS Charge-Trap NOR flash memory showed that program/erase‑cycled sectors exhibit significantly lower bit‑normalized SEU cross- sections compared to single‑programmed sectors.

J. Zhao1, Z. Li1,2, Q. Ma1, Y. Qing1, M. Gorbunov2, M. Zhang1, E. Tackx1, J. Prinzie1, P. Leroux1

1. KU Leuven, Belgium   2. IMEC, Belgium

22-nm FD-SOI SAR ADC heavy-ion tests reveal outliers at LET 27.5–60.2. Errors map to sampling, control, comparator, and flip-flop SEEs. As cross-section rises, signatures migrate from single-mechanism to arbitrary multi-bit and mixed-mechanism errors

P. Foletto Pimenta1, S. Savazzi2, E. Verroi3, M. Pullia2, F. Santos4, P. Rech1

1. University of Trento, Italy   2. Centro Nazionale di Adroterapia Oncologica, Italy   3. Trento Institute for Fundamental Physics and Applications, Italy   4. INRIA, France

We investigate the impact of 200 MeV protons on convolutions and prediction tasks executed on Tensor Processing Units. Kernel size does not impact output correctness while detection shows significantly more critical errors than classification.

A. Sengupta1,2, R. Cadena2, J. Vielmette2, S. Islam2, X. Zhao3, D. Bal2, A. Sternberg2, J. Osheroff4, J. Hutson5, M. Alles2, K. Galloway2, A. Witulski2, R. Schrimpf2, S. Kosier2

1. DLR, Germany   2. Vanderbilt University, USA   3. Duke University, USA   4. NASA Goddard Space Flight Center, USA   5. Lipscomb University, USA

Gate charge measurements reveal that latent gate damage and drain-gate single-event leakage current in SiC MOSFETs are strongly dependent on the particle energy and drain bias during irradiation and are precursors to single-event gate rupture. – LUNCH in PRCC Level 1 – Exhibit Hall A and Young Professionals (YP) LUNCHEON at the Sheraton Hotel SESSION C Photonics Devices and Integrated Circuits SESSION INTRODUCTION Chair: Julien Mekki (CNES)

L. Ratti1, A. Burdyko2, M. Campajola3, G. Collazuol4, M. Da rocha rolo5, D. Falchieri6, G.

Fiorillo3, T. Floris1, F. Licciulli7, M. Mazziotta7, L. Pancheri8, L. Rignanese6, R. Santoro2, F. Shojaei1, C. Vacchi1 1. Università degli Studi di Pavia and INFN Pavia, Italy 2. Università degli Studi dell’Insubria and INFN Milano, Italy 3. Università degli Studi di Napoli Federico II and INFN Napoli, Italy 4. Università degli Studi di Padova and INFN Padova, Italy 5. INFN Torino, Italy 6. INFN Bologna, Italy 7. INFN Bari, Italy 8. Università degli Studi di Trento and INFN TIFPA, Italy SPADs fabricated in a 110 nm CMOS technology, with different active areas and quenching features, are irradiated with 10 keV X-rays up to a total ionizing dose of 10 Mrad(SiO2). Effects on DCR are investigated.

H. Mezouar1, A. Michez2, M. Tornay3, C. Cervera4, P. Christol3

1. University of Montpellier, France   2. DELPHEA, France   3. University Of Montpellier, France   4. University of Grenobles-Alpes and CEA-LETI, France

In this paper, we investigate the effect of thermal annealing on Ga-free InAs/InAsSb type- II superlattice (T2SL) midwave infrared barrier photodetectors irradiated with 60 MeV protons at fluences up to 8x1011 H+/cm².

N. Karom1, S. Ball1, E. Teo1, A. Veluri1, P. Harris1, M. Mccurdy1, R. Schrimpf1, D.

Fleetwood1, J. Trippe1, R. Nederlander2, R. Reed1, S. Weiss1 1. Vanderbilt University, USA 2. Aegis Aerospace, USA P+-N Si-APDs show significant gain decrease under alpha irradiation compared to optical excitation. Data analysis and TCAD simulations show this results from significant increases in carrier recombination relative to avalanche generation with increasing EHP density.

K. Arnold1, N. Karom1, J. Slaby2, A. Veluri1, A. Kaylor2, A. Sternberg1, D. Ball1, R. Schrimpf1, D. Fleetwood1, S. Ralph2, R. Reed1, S. Weiss1

1. Vanderbilt University, USA   2. Georgia Institute of Technology, USA

Impacts of 10-keV X-ray irradiation on high-speed electro-optic response are observed in silicon Mach-Zehnder modulators. More than 50% electro-optic performance degradation is observed when devices are irradiated under active bias. Underlying ionization mechanisms are examined. The History of Puerto Rico and San Juan – INVITED SPEAKER SESSION D Radiation Effects in Devices and Integrated Circuits SESSION INTRODUCTION Chair: Corinna Martinella (University of Montpellier)

N. Afroz1, A. Sayem1, A. Dwadasi1, R. Baumann1, Y. Makris2

1. University of Texas at Dallas, USA   2. University of California, USA

We investigate how total ionizing dose-induced charge loss in analog floating-gates affects the inference accuracy of Analog Artificial Neural Networks (AANNs) and demonstrate how periodic hot-electron reprogramming can restore performance, effectively mitigating radiation-induced degradation.

J. Yang1, T. Pena2, A. Wright1, J. Chaney1, A. Hoang2, A. Mannix2, E. Pop2, D. Daniel1, J. Taggart1, S. Stuart1, A. Bushmaker1

1. The Aerospace Corporation, USA   2. Stanford University, USA

We investigate the effects of gamma radiation on scaled monolayer molybdenum disulfide (MoS2) nanoribbon field-effect transistors. At 1 Mrad TID, threshold voltage degradation occurred while field-effect mobility remained constant, indicating gate dielectric limits radiation hardness.

P. Muscat1, H. Barnaby1, G. Rodarte1, C. Nies2, M. Conway3, D. West2, H. Hairston2, J. Neuendank1, Z. Adamany1

1. Arizona State University, USA   2. KYOCERA AVX, USA   3. KYOCERA AVX, United Kingdom

Total ionizing dose effects on capacitance were evaluated for X7R and C0G/NP0 multilayer ceramic capacitors using Co-60 gamma irradiation. X7R devices showed monotonic dose-dependent capacitance reduction, while C0G/NP0 capacitors remained stable.

J. Vivas Gomez1, H. Parra1, E. Zhang1, J. Lee1, R. Abdolvand1

1. University of Central Florida, USA

X-ray total ionizing dose effects were investigated in resonant LiNbO3 TPoS MEMS. After radiation, resonant frequency shifts remained below 0.06%, while bounded, partially recoverable degradation in Q, keff², motional resistance, and insertion loss are observed.

N. Crenshaw1,2, J. Young1, J. Wallace1, I. Timmins1, L. Musson1, W. Charlton2

1. Sandia National Laboratories, USA   2. University of Texas at Austin, USA

Linear bipolar transistors, differential amplifiers, and operational amplifiers were exposed to individual and combined neutron and electromagnetic environments. Neutron displacement damage was observed to modify device and circuit response to injected RF noise.

X. Zhao1, J. Kronenberg1, S. Tolson1, N. Pieper1, Y. Xiong1, B. Bhuva1

1. Vanderbilt University, USA

Different RO designs are used to determine effective degradations in NMOS and PMOS currents after TID exposures in a 3-nm bulk FinFET technology, revealing effects of irradiation bias and circuit activity that influence degradation levels. SESSION E Environments, Facilities, and Dosimetry SESSION INTRODUCTION Chair: Cornelia Hoehr (TRIUMF)

L. Weninger1, S. Acid1,2, Y. Aguiar3, R. Garcia3, N. Kerboub2, S. Fiore3, D. Prelipcean3, A. Morana1, S. Girard1

1. Université de Saint Etienne, France   2. CNES, France   3. CERN, Switzerland

We propose a novel approach to adapt optical-fiber based dosimeters based on the radiation-induced luminescence (RIL) phenomenon to the pulsed (spill-based time structure) mixed-field environment of the CHARM facility at CERN.

B. Tissot Ferraz1, T. Beene1, D. Söderström1, I. Slipukhin1, R. Garcia1, N. Emriskova1, A. Waets1, Y. Aguiar1, D. Prelipcean1, C. Matteo1, M. Garcia1, D. Lucsanyi1, R. Federico1, G. Pezzullo1, G. Kucharska1, E. Garcia1, J. McCarthy1, M. Delrieux1

1. CERN, Switzerland

The paper presents the results of Single-Event-Effect testing of commercial electronic devices with very high-energy heavy ions at the HEARTS@CERN facility during the 2025 run, along with the beam characterization and the adopted dosimetry practices.

M. Kumar1, J. Bell1, A. Brandl1, B. Ray1

1. Colorado State University, USA

This work experimentally investigates 3-D floating-gate and charge-trap NAND flash as passive radiation dosimeters, showing linear FG sensitivity of ~12.5 mV/krad(Si), while CT exhibits multi-mechanism, non-linear response with ~35 mV/krad(Si) initially, reducing to ~18 mV/krad(Si).

A. Koziukov1, G. Protopopov1, M. Kozhukhov1, I. Gvozdev1

1. RH-Forecast LLC, Russian Federation

This paper presents a time-resolved, measurement-driven approach to estimate SEU rates in spacecraft memories during SPEs by reconstructing particle spectra from GOES-16 and ACE flux measurements. The method is validated against in-flight upset-count data from RHEME-3.

C. Cazzaniga1, F. Principato2, F. Pintacuda3, X. Ledoux4, M. Kastriotou1, C. Frost1

1. STFC, United Kingdom   2. Palermo University, Italy   3. STMicroelectronics, Italy   4. GANIL, France

Silicon IGBT and silicon carbide power MOSFETs have been studied with fast neutrons in the 2-40 MeV range at GANIL SPIRAL-2 where energy selection is possible. The results can be compared with atmospheric neutron tests. POSTER SESSION SESSION INTRODUCTION Chair: Vincent Goiffon (ISAE-SUPAERO) – POSTER SESSION Project with local young students from Puerto Rico The Puerto Rico STEM education program has been working with Space R3 LLC to develop a series of microelectronics- based projects for high school students (ages 15–18). Participating students are from University Gardens High School and Papa Juan XXIII High School, both located in San Juan, Puerto Rico. These projects span multiple disciplines, including mathematics, science, and engineering, with a strong emphasis on radiation effects in microelectronics. The program has run for approximately one academic year, beginning in September 2025 and concluding at the NSREC 2026 Conference. During this time, students and their teachers designed, built, and tested a variety of microelectronic systems. Guest speakers included Nicole Pothier McGillivray (Carrington Shield Strategies, LLC), Ricardo De Jesus (Raytheon), Lea Ann Smith (Radiation Test Solutions, Inc.), Nicholas Christian (Radiation Test Solutions, Inc.), and Melanie Berg (Space R3 LLC). Industry partners generously donated access to radiation testing facilities and shared their expertise. ProNova Solutions, LLC provided proton testing, VPT Rad, Inc. provided total ionizing dose (TID) testing, and Radiation Test Solutions, Inc. (RTS) provided neutron testing. The IEEE Nuclear and Plasma Sciences Society (NPSS) also provided generous financial support. Data acquisition was performed by Space R3 LLC in collaboration with Natch León of Papa Juan XXIII High School. Three engineering students were selected to travel to the TID facility and participate in testing, while mathematics students received the resulting data and performed the analysis. The results will be presented by the students during a poster session at the NSREC 2026 Conference. NSREC 2026 has decided to reserve a dedicated spot in its POSTER SESSION for the STEM-PR students to present their work to the community. Please visit these Posters and discuss the results with our youngest colleagues! PUERTO RICO CONVENTION CENTER SESSION F Basic Mechanisms of Radiation Effects SESSION INTRODUCTION Chair: Marta Bagatin (University of Padova)

E. Wong1, B. Dodd1, C. Champagne1, D. Ball1, S. Kosier1, M. Hu1, R. Reed1, B. Sierawski1, D. Fleetwood1, R. Schrimpf1, J. Trippe1

1. Vanderbilt University, USA

Dose enhancement in nanometer-scale devices is quantified via Monte Carlo radiation- transport simulations of 22-nm FDSOI devices. Results are calibrated and compared via comparison with experimental data on structures having high-Z gate stacks.

A. Billa1, S. Shorina1, P. Maloney1, J. Debnath1, H. Parra1, B. Bolton1, E. Zhang1

1. University of Central Florida, USA

X-ray total ionizing dose effects in enhancement-mode GaN HEMTs are examined under different post-irradiation electric fields. Threshold-voltage shifts and recovery depend strongly on bias history, with TCAD simulations linking field distribution to charge trapping stability.

D. Hassenmayer1, M. Elko1, P. Lenahan1

1. Penn State University, USA

Electrically detected magnetic resonance (EDMR) and near zero field magnetoresistance (NZFMR) measurements were utilized to detect atomic scale defects generated by heavy ion irradiation of GaN pn junction diodes at room temperature.

H. Goncalves de Medeiros1, N. Für1, A. Erlebach1, M. Belanche1, J. Reuteler1, K. Voss2, U. Grossner1

1. ETH Zurich, Switzerland   2. GSI, Switzerland

SELC and SEB degradation and their mechanisms in SiC power diodes are investigated through post-irradiation characterization with EDX, Ultraviolet-Visible Photoluminescence (UVPL), and Raman Spectroscopy. 3D-TCAD is employed to put the findings into perspective.

N. Für1, H. Goncalves de Medeiros1, M. Nagel1, M. Kirchbaumer1, M. Belanche Guadas1, R. Kupper1, U. Grossner1

1. ETH Zürich, Switzerland

Based on high-energy (200 MeV) proton irradiation on COTS SiC power diodes, the impact of displacement-induced defect activation in radiation-induced damage and, in consequence, the limitations of standard derating practices are discussed.

S. Kim1, H. Kim2, G. Jeon1, Y. Hwang1, R. Chung2, D. Kim1

1. Korea Atomic Energy Research Institute, Korea   2. Kyungpook National University, Korea

Total ionizing dose effects in SnO2 FETs were investigated using Co-60 gamma irradiation. The results revealed the dose-dependent correlation between pre-existing oxygen vacancies and radiation-induced electron-hole pairs, relating to the degradation of device performance.

I. Hudson1, H. Hunnicutt1, D. Loveless1

1. Indiana University, USA

Inter-device variability in TID-induced functional failure was observed across forty-six MSP430FR6989 microcontroller units. A combination of programmable bias and the internal VLO oscillator’s baseline behavior is shown to be predictive of the failure dose. Benchtop Emulation of System-Level Analog Single-Event Transients from Piece-Part PG-2 Data M. McKinney1, C. James1, T. Peyton1, H. Hunnicutt1, D. Loveless1 1. Indiana University, USA A board-level ASET emulation methodology is demonstrated by comparing heavy-ion– induced transients in a linear voltage regulator with emulated responses derived from measured piece-part SETs, enabling system verification with reduced radiation testing.

M. Hu1, J. Trippe1, D. Ball1, A. Sternberg1, B. Sierawski1, M. Solt2, J. Thieman2, S. Schroeder3, J. Van Tilborg3, J. Matson2, J. Warner2, B. Dorney2, R. Jacob3, C. Berger3, B. Greenwood3, S. Barber3, R. Reed1, D. Fleetwood1, S. Wolin2, K. Nagamatsu2, M. McLain2

1. Vanderbilt University, USA   2. Northrop Grumman, USA   3. Lawrence Berkeley National Laboratory, USA

Laser-plasma accelerated electron bunches are investigated as surrogates for heavy ion testing of single event effects in microelectronics. Experimental data and high-fidelity simulations show that microelectronic responses to electron bunches can mimic heavy ions.

J. Warner1, S. Messenger1, B. Song1, J. Rodriguez1

1. Northrop Grumman, USA

Pulsed-laser screening was performed on commercial CMOS devices to estimate the latchup cross-section vs LET curve and historical heavy ion data is used to bound SEL risk. – BREAK TERRACE SESSION H Hardening by Design SESSION INTRODUCTION Chair: Nathan Nowlin (Sandia National Laboratories)

A. Dwadasi1, R. Rodriguez-Davila1, M. Pate2, T. Nikoubin1, R. Baumann1

1. University of Texas at Dallas, USA   2. Texas Instruments, USA

Flux dependent fault masking in a TI F28377D-SEP microcontroller is investigated using a high-speed shutter and 3-D printed physical masks, showing how temporal and spatial gating can expose hidden unrecoverable faults during accelerated SEE testing.

N. Yingqiang1, T. Ming2, Y. Guofang1, C. Yaqing1, C. Jianjun1, L. Deng1, Y. Jiaofen2, L. Bin1

1. National University of Defense Technology, China   2. Hunan University, China

This paper investigates SEU robustness of lightweight VGG networks using ReLU_max and L1-based algorithm-level hardening, evaluated via fault injection, heavy-ion, and laser experiments on sub-20 nm FinFET AI chips, revealing compression-dependent hardening effectiveness. CLOSING REMARKS RESG NEWS The purposes of the Radiation Effects Committee (REC) of the IEEE Nuclear and Plasma Sciences Society are to advance the theory and application of radiation effects and its allied sciences, to disseminate information pertaining to those fields, and to maintain high scientific and technical standards among its members. The Committee aids in promoting close cooperation and the exchange of technical information among its members. This goal is met by running conferences for the presentation and discussion of original contributions, assisting in the publication of technical papers on radiation effects in the IEEE Transactions on Nuclear Science (TNS), coordinating development of radiation effects measurement definitions and standards within IEEE and other standards organizations, providing a sounding board for radiation effects specialists, providing for the continued professional development and needs of its members, and providing liaisons between IEEE and other technical organizations in the areas of radiation effects. Each year, the REC provides a forum for the technical exchange of information by Kay Chesnut, RTX Executive Chair holding the Nuclear and Space Radiation Effects Conference (NSREC). NSREC is an international forum for presentation of research papers on radiation effects, including effects on electronic and photonic materials, devices, circuits, sensors, systems, semiconductor processing technology, and design techniques for producing radiation- tolerant (hardened) devices and integrated circuits. Papers presented at the NSREC are submitted for possible publication in the Spring issue of the IEEE TNS. NSREC 2026 will be held in San Juan, PR, July 20-24, at the Puerto Rico Convention Center in San Juan Puerto Rico, with the adjoining Sheraton Puerto Rico Resort. Dr. Philippe Paillet, CEA, is the Conference Chair. The 2026 NSREC supporters are Southwest Research Institute, AMD, Renesas, TAU Systems, Northrop Grumman, and Aerospace Corporation. We appreciate our supporters for their significant commitment to the conference. The supporters’ ongoing commitment to NSREC allows us to keep conference registration rates affordable. We welcome other organizations to consider supporting NSREC 2027 in Atlanta, GA. Heather Quinn, Air Force Research Laboratory Executive Vice-Chair Our upcoming NSREC chairs include Jonathan Pellish, IEEE, for 2027, Pascale Gouker, MIT Lincoln Laboratories, for 2028, and Brian Sierawski, Vanderbilt University, for 2029. Papers presented at the 2026 NSREC are eligible for publication in a Spring 2027 issue of the IEEE TNS. Authors must upload their papers prior to the conference for consideration for publication in the TNS Special Issue. Detailed instructions can be found at www.nsrec.com. Keep visiting our web site for author information, paper submission details, exhibitor links, on-line registration, and the latest NSREC information. RESG NEWS All papers accepted for oral or poster presentation in the 2026 technical program will be eligible for publication in a special Spring 2027 issue of the IEEE Transactions on Nuclear Science (TNS), based on separate submission of a complete paper. Each IEEE TNS submitted paper will be subject to the standard full peer review. All papers must be submitted through the IEEE Author Portal. While this is a different site than used for submissions in previous years, the process is similar. Instructions for submitting and reviewing papers can be found under the Publications tab at the Conference website www.nsrec.com. The deadline for submission of TNS papers is July 17, 2026. Data Workshop papers are published in a Workshop Record and are not candidates for publication in the IEEE TNS. The process for the Workshop Record is managed by the Workshop Chair. Dan Fleetwood Vice-Chair of Publications The review process for papers submitted to the TNS is managed by a team of editors. To provide consistent review of papers, this editorial team manages the review process for all radiation effects papers submitted to the TNS throughout the year. The editorial team consists of a senior editor and associate editors who are technically knowledgeable in one or more specializations and are experienced in the publication process. If you would like to serve as a reviewer for the NSREC or RADECS special issues of the TNS, and/or for radiation effects papers submitted throughout the year, please contact one of the editors. The editors for the 2026 NSREC are: Dan Fleetwood, Senior Editor, Vanderbilt University Email: dan.fleetwood@vanderbilt.edu Heather Quinn, Associate Editor, Air Force Research Laboratory Email: heather.quinn.2@spaceforce.mil Steven Moss, Associate Editor, The Aerospace Corporation, retired Email: scmosshb@aol.com Vincent Goiffon, Associate Editor, ISAE-SUPAERO Email: vincent.goiffon@isae.fr Philippe Paillet, Associate Editor, CEA Email: philippe.paillet@cea.fr Lili Ding, Associate Editor, NINT, China Email: lili03_ding@126.com Daniel Loveless, Associate Editor, Indiana University Email: dlovele@iu.edu Jeffrey Black, Associate Editor, Sandia National Laboratories Email: jefblac@sandia.gov Federico Faccio, Associate Editor, CERN Email: Federico.Faccio@cern.ch Xingji Li, Associate Editor, Harbin Institute of Technology Email: lxj0218@hit.edu.cn Cui Meng, Associate Editor, Zhejiang University Email: mengcui@zju.edu.cn Enxia Zhang, Associate Editor, University of Central Florida Email: enxia.zhang@ucf.edu RESG NEWS ARE Now is the time to join the Institute of Electrical and Electronics Engineers YOU A (IEEE) and the Nuclear Plasma Sciences Society (NPSS). Why? First of all, you’ll MEMBER become a member of the largest professional engineering society in the OF IEEE? world. About 60% of NSREC attendees are IEEE members. The cost of membership in the IEEE depends on your country and your career phase. IEEE members receive access to a broad range of benefits, including a terrific insurance program, on-line access to IEEE publications and reduced rates at all IEEE-sponsored conferences, including, of course, NSREC and the Short Course! NPSS membership is $35 annually. NPSS members receive a free subscription to NPSS News, and a free on-line electronic access via IEEE Xplore to the IEEE Transactions on Nuclear Science (TNS) and the NSREC Data Workshop Records. Members can search and view digital copies of the entire IEEE TNS paper archive from current issues to the first IEEE NSREC in 1964. NPSS members get to vote in our elections, including the election for Junior Member At-Large that is held at the annual open meeting during the conference. Apply for membership at http://ieee-npss.org/why-join-npss-and-ieee/ or visit the IEEE registration desk at the conference. NSREC PUBLICATIONS NSREC has two publications each year: ■ IEEE Transactions on Nuclear Science. This IEEE journal is the official archive of research papers presented at NSREC. Papers presented at the conference undergo an additional submission and peer review before they are accepted for the 2026 special issue. ■ IEEE Radiation Effects Data Workshop Record. Published each year in October, this IEEE proceedings has become the source for radiation test data on semiconductor components. A complimentary copy of the 2026 IEEE Radiation Effects Data Workshop Record and the 2026 special NSREC issue of the IEEE TNS will be available for download to each NSREC technical session attendee if one has opted into inclusion on the attendee list. RADIATION EFFECTS You are invited to attend the IEEE Radiation Effects Committee's Annual Open COMMITTEE Meeting on Thursday, July 23, 4:00 pm – 5:30 pm. All conference attendees ANNUAL OPEN are encouraged to attend, including attendees that are not IEEE NPSS members. MEETING A welcome reception for new NPSS members will follow the open meeting. THURSDAY, JULY 2 3 During the open REC meeting we will discuss the current and future – conferences. Nominations for the 2026 Junior Member-at-Large to the Radiation Effects Steering Group are accepted at the meeting. Voting instructions for IEEE NPSS members will be provided. Join IEEE NPSS and you can vote! AWARDS 2025 OUTSTANDING Gamma-Ray Induced Displacement Damage in Silicon Microvolumes: Single Defect PAPER AWARD Generation Rate and Random Telegraph Signal V. Goiffon, C. Durnez, A. Jay, A. Jouni, V. Karchenkova, A. Antonsanti, V. Lalucaa, D. Lambert, T. Jarrin, A. Salih Alj, R. Monflier, N. Richard, P. Paillet, A. Hemeryck, D. McGrath, and C. Virmontois 2025 MERITORIOUS Pulsed, Focused Electrons as a Surrogate Single-Event Effects Testing Technique PAPER AWARDS (2) G. Tzintzarov, J. W. Teng, A. Kulkarni, A. W. Bushmaker, P. Musumeci, M. D. Looper, D. Daniel, R. Berry, S. Milton, L. D. Edmonds, and G. Allen Ultra-Fast Recovery from TID-Induced Degradation in MOS Transistors via Electrical Rapid Annealing A. I. Vidana, C. G. McKay, N. A. Dodds, D. R. Hughart, P. Oldiges, T. Wallace, J. V. D'Amico, J. Joffrion, K. R. Sapkota, R. N. Nowlin, and H. J. Barnaby 2025 OUTSTANDING Analysis of Optical and Electrical Single-Event Transients in Integrated Silicon Photonic STUDENT PAPER AWARD Micro-Ring Modulators B. L. Ringel, J. W. Teng, P. J. Francis, M. Hosseinzadeh, D. G. Sam, J. H. Shin, Z. R. Brumbach, C. R. Snyder, A. Ildefonso, A. Khachatrian, D. McMorrow, J. M. Hales, T. Crane, G. N. Tzintzarov, and J. D. Cressler 2025 OUTSTANDING CHALICE: Calculator for Highly Accurate Laser-Induced Carrier Excitation DATA WORKSHOP A. Ildefonso, J. M. Hales, T. Crane, and D. McMorrow PRESENTATION AWARDS 2026 RADIATION The winners of the 2026 Radiation Effects and 2026 Radiation Effects Early Achievement EFFECTS AWARDS Awards will be announced Tuesday, July 21, at the conference opening. The purpose of the Radiation Effects Award is to recognize individuals who have had a sustained history of outstanding and innovative technical and/or leadership contributions to the radiation effects community. The purpose of the Radiation Effects Early Achievement Award is to recognize an individual within the first ten years of beginning his or her career whose technical contributions and leadership have had a significant impact on the field of radiation effects. 2027 RADIATION Nominations are currently being accepted for the 2027 IEEE Nuclear and Plasma Sciences EFFECTS AWARD Society (NPSS) Radiation Effects Award. The basis of the award is for individuals who have: (1) a substantial, long-term history of technical contributions that have had major impact on the radiation effects community. Examples include benchmark work that initiated major research and development activities or a major body of work that provided a solution to a widely recognized problem in radiation effects; and/or (2) a demonstrated long-term history of outstanding and innovative leadership contributions in support of the radiation effects community. Examples include initiation or development of innovative approaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the professional development of the members of the radiation effects community. Nominations are currently being accepted for the 2027 Radiation Effects Early Achievement Award. The basis of the award is for individuals whose technical contributions and leadership during the first ten years of the recipient’s career that have had a major impact on the Radiation Effects Community. Examples include work that provides a solution to important technical problems in radiation effects or work that identifies significant new issues in the field. Other factors are cumulative research contributions over the first part of the career, internationally recognized leadership, and mentorship. It is the intent of the RESG to give special consideration for this award to members of the community who are IEEE/NPSS members. Monetary awards and plaques will be presented at the NSREC in Atlanta, GA, in July 2027. Nomination forms are available electronically in PDF Format or in Microsoft Word format at http://ieee-npss.org/technical-committees/radiationeffects/. Forms should be sent to Justin Likar, Member-at-Large, JHUAPL at Justin.Likar@jhuapl.edu

Dinner with live music and performance at the historic Caribe Hilton.

For registered conference attendees

8:45 AM Session Introduction · Chair: Marta Bagatin (University of Padova)

K. Sapkota1, B. Tierney1, A. Vidana1, B. Dodd1, J. Neuendank1,2, R. Ghimire3, M. Spear3, H. Barnaby2, N. Nowlin1

1. Sandia National Laboratories, USA   2. Arizona State University, USA   3. Air Force Research Laboratory, USA

The 1/f noise level measured in GlobalFoundries 12-nm FinFETs increases with ionizing dose. The TID-induced traps near the silicon-oxide interface are estimated, and their behaviors for different threshold voltages are discussed.

G. Andreetta1, L. Gelmi2, E. Vallicelli3, M. De Matteis3, A. Lai4, A. Paccagnella1, S. Mattiazzo1, S. Bonaldo1 Total ionizing dose (TID) is investigated by X-rays in two 28-nm CMOS technology flavors,

1. University of Padova, Italy   2. University of Pavia, Italy   3. University of Milano Bicocca, Italy   4. INFN Cagliari, Italy

HPL and HPC+. Differences in the TID sensitivity are found in short-channel devices.

A. Salih Alj1, V. Goiffon1, M. Bolin1, J. Carrere2, V. Malherbe2, C. Virmontois3

1. ISAE-SUPAERO, France   2. STMicroelectronics, France   3. CNES, France

We show that isolation trenches reduce displacement damage in silicon microvolumes by strongly reducing divacancy formation, based on dark current spectroscopy comparing gamma- and proton-irradiated trench photogates with trench-less vertical photodiodes.

Z. Stone1, M. Hu1, D. Fleetwood1, J. Trippe1, S. Kosier1, R. Schrimpf1, D. Ball1, R. Cadena1, M. Alles1, L. Massengill1

1. Vanderbilt University, USA

Threshold-voltage recovery in TID-irradiated SiC MOSFETs by high-field stress is highly repeatable to 1 Mrad(SiO2) cumulative dose. We find that Fowler–Nordheim electron injection reversibly cycles oxide defects between charged and neutral states without progressive degradation.

S. Shorina1, E. Zhang1, H. Parra1, A. Billa1, P. Maloney1, B. Bolton1, S. Hankinson1, H. Gingold1, J. Debnath1, S. Islam2, T. Liu2, J. Gray2, D. Fleetwood2, L. Massengill2

1. University of Central Florida, USA   2. Vanderbilt University, USA

Low-frequency noise in enhancement-mode power HEMTs increases after krypton irradiation, indicating radiation-activated trap generation near the channel and buffer layer. Nitrogen vacancy related defects are likely responsible for the increased noise.

Level 1 – Exhibit Hall A

10:35 AM Session Introduction · Chair: Almudena Lindoso (University Carlos III Madrid)

G. Tzintzarov1, J. Teng1, A. Kulkarni2, S. Brian2, P. Musumeci2, A. Bushmaker1, S. Milton3, R. Berry4, G. Allen5

1. The Aerospace Corporation, USA   2. University of California, USA   3. TAU Systems, USA   4. RadiaBeam Technologies, USA   5. NASA Jet Propulsion Laboratory, USA

Development of SEE testing using pulsed electrons is discussed. SET correlation in a photodiode is achieved and SEL testing in a COTS part is discussed. Results support the use of such beams for RHA testing.

A. Stephen Vellankanni1, I. Chatterjee2, U. Guin3, B. Ray1

1. Colorado State University, USA   2. Airbus Defence and Space, Germany   3. Auburn University, USA

We demonstrate a TID-based data sanitization technique for aged SRAM, achieving near- complete removal of aging-induced data imprints after 100 krad(Si), and provide a root- cause analysis of the underlying physical mechanisms.

R. Zedric1, N. Dodds1, J. Joffrion1, Y. Xiong1, A. Tonigan1

1. Sandia National Laboratories, USA

Evidence is presented that suggests the international standard for thermal neutron SEE testing contains an error that causes the calculated cross sections to be artificially low. The impacts are quantified, and the formula is corrected. RADIATION EFFECTS DATA WORKSHOP INTRODUCTION Chair: Jennifer Taggart (The Aerospace Corporation) – Exhibitor Drawings – PUERTO RICO RADIATION EFFECTS DATA WORKSHOP

Chair: Jennifer Taggart (The Aerospace Corporation)

Level 1 – Exhibit Hall A · 12:50 PM Exhibitor Drawings

1:20–3:20 PM · Level 3 – Ballroom B

M. Vadrucci1, R. Carpentiero1, M. Di Clemente1

1. Italian Space Agency, Italy

The paper describes ASIF, Italy’s national space irradiation network, highlighting the REX electron accelerator used within ACDC_Q to optimize diamond quantum sensors, offering controlled irradiation for space qualification and advancing technological autonomy and international research.

R. Drury1, P. Zeljko1, S. Peracchi1

1. Australian Nuclear Science and Technology Organisation, Australia

The ANSTO microbeam facilities and the latest developments in scanning modalities are presented, highlighting advanced, spatially resolved radiation testing capabilities for devices, materials, and biological samples, delivering insights into localised damage beyond conventional broad‑beam irradiation.

A. Yeck1, C. Farah1, D. McNanney1, S. Lidia1

1. Facility for Rare Isotope Beams, Michigan State University, USA

The Facility for Rare Isotope Beams at Michigan State University has introduced a new SRIM-based stackup tool for calculating energy loss, LET, and range in common SEE testing materials.

S. Toguchi1, N. Rezzak1, D. McNamara2, C. Jean2, B. Burke2, R. Mohan1, I. Bryant3, M. Madugoda1, M. Urias1

1. Microchip Technology, USA   2. Microchip Technology, Ireland   3. Microchip Technology, United Kingdom

This paper presents results on the impact of protons and heavy ions on the Radiation- Tolerant PolarFire® SoC FPGA RTPFS460ZT Microprocessor Subsystem (MSS), demonstrating its potential suitability for space applications.

M. Urias1, A. Cai1, N. Rezzak1, S. Toguchi1

1. Microchip Technology, USA

This paper provides the Total Ionizing Dose (TID) response of the Radiation-Tolerant PolarFire® SoC FPGA RTPFS460ZT using gamma ray, demonstrating its resistance to TID up to 100 krad (SiO2).

N. Rezzak1, S. Toguchi1, M. Madugoda1, M. Reaz1, M. Urias1

1. Microchip Technology, USA

This paper presents heavy ion and proton SEE results on the RTPFS460ZT PolarFire® SoC FPGA fabric. Results cover SEL, SEU, and SEFI across Flip-Flops, SRAM, Mathblock, PLL and pNVM, confirming its suitability for space environments.

W. Newman1, M. Campanella1, E. Thomson1, W. Choroco1, C. Thomson1

1. Renesas Electronics America, USA

We report the single event performance and low dose rate TID results of the radiation- hardened ISL73849SLH Single/Dual Phase Current Mode PWM Controller with PMBus & Telemetry.

M. Campanella1, W. Newman1, E. Thomson1, C. Thomson1, T. Linder1

1. Renesas Electronics America, USA

We report the single event effects and total ionizing dose test results for the ISL73846 2MHz double ended PWM controller with synchronous rectification.

M. Campanella1, W. Newman1, E. Thomson1, C. Thomson1, D. Wackley1

1. Renesas Electronics America, USA

We report the single event effects and total ionizing dose test results for the ISL75055 3A Source and Sink DDR Terminator/LDO with Buffered Reference.

L. Ryder1, K. Ryder1, E. Wilcox1, T. Carstens1, S. Roffe1, A. Wood1, M. Campola1, J. Osheroff1, M. Joplin1

1. NASA Goddard Space Flight Center, USA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion- and proton-induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).

L. Sihver1, Y. Barghouty1 A lightweight hydrogen rich nano doped Multifunctional Shielding Polymer (MSP),

1. Cosmic Shielding Corporation, USA

commercially branded as Plasteel™, with exceptional shielding properties, and good mechanical and thermal characteristics will be presented.

A. Dwadasi1, M. Pate2, R. Rodriguez-Davila1, T. Nikoubin1, R. Baumann1

1. University of Texas at Dallas, USA   2. Texas Instruments, USA

This work reports the SEL, SEU and SEFI test results obtained from Heavy-Ion testing of TI F28377D-SEP Microcontroller. This dual-core microcontroller is designed for real-time closed-loop control in power and motor-drive applications with dedicated peripherals.

A. Marinelarena1, T. Lew1, M. Trevino1

1. Texas Instruments, USA

Single Events Effects and Total Ionizing Dose results for the TPS7H1301-SP 3V to 6.3V Input, Switched Capacitor Voltage Inverter is summarized, showing robust SEE performance up to LETEFF=75MeV-cm2/mg and excellent TID performance up to 100krad(Si).

K. Reed1, N. Ericson1, S. Frank1, L. Clonts1, P. Mulligan1, F. Ivester1, C. Harvey1, H. Patel1

1. Oak Ridge National Laboratory, USA

Emerging fusion reactors require advanced instrumentation and control systems in locations subject to high neutron and gamma doses. This summary details the irradiation testing and results of level translator and protection circuitry for ITER subsystems.

N. Ericson1, K. Reed1, S. Frank1, L. Clonts1, P. Mulligan1, F. Ivester1, C. Harvey1, H. Patel1

1. Oak Ridge National Laboratory, USA

An electronics system for monitoring ITER vacuum/gas systems was prototyped without radiation-hardened components. In response to ITER’s demanding radiation levels, this paper reports detailed testing of a precision amplifier, summarizing test design and performance trends.

D. Lo1, T. Tran1

1. Northrop Grumman Systems Corporation, USA

We report the results of single event effects (SEE) testing with heavy ions of COTS (commercial-off-the-shelf) electronic components considered for space missions.

J. Diot1, M. Gaillardin1, G. Assaillit1, C. Delbos1, D. Poujols1

1. CEA, France

High-performance RF components are being increasingly used in different applications. It is essential to characterize their sensitivity to ionizing radiation. This study aims to determine the susceptibility of three LNAs: CMD319C3, CMD264P3, and HMC8411LP2FE.

J. Heun1, E. Colmet-Daage1, R. Stevens1, D. Johnson1, O. Mansilla1

1. Microchip Technology, USA

Microchip has developed the radiation hardened LX7714 power switch to protect satellite power buses from destructive overcurrent events. This paper focuses on destructive Single Event Latch-up (SEL) and Single Event Transient (SET) test results.

M. Vonthun1, A. Turnbull1, V. Olariu1, R. Dumitru1, B. Baranski1, G. Hoglund1

1. Frontgrade Technologies, USA

The UT88ETHPHY4P10G 10G Ethernet Phy was characterized for SEL and SEFI up to a LET of 67 MeV∙cm2/mg with heavy ions and characterized for total ionizing dose to 300 krad(Si).

M. Vonthun1, E. Fehrman1, R. Dumitru1, G. Hoglund1, A. Turnbull1, J. Benthem1, S. Sapp1

1. Frontgrade Technologies, USA

The UT8MRQRHXG QSPI MRAM was characterized for SEL and SEFI up to a LET of 77.5 MeV∙cm2/mg with heavy ions and characterized for total ionizing dose to 300 krad(Si).

H. Quinn1, M. Felix2, W. Slater1

1. Air Force Research Laboratory, USA   2. Cosmiac, USA

The Texas Instruments MSP430FR5994 is a potential option for direct-to-digital computation for low-bandwidth sensors. The results are compared to a previous version of the component.

I. Troxel1, M. Gruber1, D. Christenson1, P. Tokeshi2, B. Mark2

1. Troxel Aerospace Industries, USA   2. Moog Broad Reach, USA

Heavy ion and proton DSEE and NDSEE characterization results are presented for testing of Micron DDR4 DRAM devices.

J. Van Burger1, J. Oarethu1, C. Pham1, N. French1, N. Leak2, S. Defaz2, J. Saldivar2, F. Luo2, M. Salato3, R. Strittmatter4, J. Likar1, J. Kozak1

1. Johns Hopkins Applied Physics Lab, USA   2. Stony Brook University, USA   3. EPC Space, USA   4. EPC Corporation, USA

GaN HEMTs offer advantages for space power electronics because of increasing power density and TID resilience. Electrical and SEE stresses are now being combined to evaluate the impact on electrical parameter derating, and useful lifetime.

P. Maloney1, A. Billa1, B. Bolton1, S. Hankinson1, H. Gingold1, S. Shorina1, D. Fleetwood2, E. Zhang1

1. University of Central Florida, USA   2. Vanderbilt University, USA

This paper reports angular heavy-ion single-event effects in commercial EPC enhancement-mode GaN power HEMTs, including SELC and SEB thresholds, based primarily on Xe irradiation at 16 and 20 MeV, with supporting Ag and Cu data.

S. Taniguchi1, H. Nakamoto1, J. Furuta2, R. Nakajima1, A. Matsumoto1, S. Onoda3, K. Kobayashi1

1. Kyoto Institute of Technology, Japan   2. Okayama Prefectural University, Japan   3. National Institutes for Quantum Science and Technology, Japan

We measured heavy-ion-induced current waveforms of 1200 V Si and SiC devices to investigate Single Event Burnout mechanisms. The study evaluates the impact of material properties and structural differences on the failure process.

P. Benedetto1

1. Arizona State University, USA

This paper shows the radiation results of the VPT Components RAD7234 die family of n- channel MOSFETs fabricated at LA Semiconductor, designed to be radiation-hardened to 100krad(Si) and SEE immune to Xe (15 MeV/n beam).

E. Auden1, A. Wright2, J. Bonsall2, J. Teng2, T. Rodriguez2, N. Sepulveda-Ramos2

1. Los Alamos National Laboratory, USA   2. The Aerospace Corporation, USA

We present results for a commercial-quality, plastic-encapsulated microcircuit (PEM) analog digital converter (ADC) subjected to total ionizing dose (TID) testing and reliability screening commensurate with MIL-STD-38535 class P.

B. Torres-Kulik1, M. Mahmud1, D. Hiemstra1

1. MDA Space, Canada

The total ionizing dose and proton single event effects characterization of a commercial- off-the-shelf current sense amplifier, analog to digital converter, and DC-DC converter is summarized.

J. Cardenas Chavez1, D. Hiemstra2, A. Noguera Cundar1, L. Chen1

1. University of Saskatchewan, Canada   2. MDA Space, Canada

This study evaluated the MAX22507E transceiver for TID and SEE using low-dose rate 60Co radiation and high-energy protons. The transceiver showed TID tolerance up to 80 krad(Si), with functional failure observed due to SEE observed.

D. Hiemstra1

1. MDA Space, Canada

The 2025 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type or effect.

D. Hiemstra1, N. Hu1

1. MDA Space, Canada

Proton induced SEU cross-section of the Versal XCVC1902 AI Engines is presented. Upset rates in the space radiation environment are estimated.

P. Maillard1

1. AMD, USA

This paper presents the neutrons and proton single-event responses of AMD’s 6nm Versal™ AIE Edge Gen2 multicore scalar processing system (PS) using AMD’s System Validation Tool (SVT) suite. SEU, SEFI, and SEL results are presented. – RESG OPEN MEETING The Future of CERN - Markus BRUEGGER INVITED SPEAKER SESSION G HARDNESS ASSURANCE: PIECE PARTS TO SYSTEMS AND TESTING APPROACHES

For registered conference attendees

The Future of CERN — Markus Brügger

J. Carpenter1, T. Peyton1, J. Hales2, T. Crane2, D. McMorrow2, M. McKinney1, J. Lazenby1, D. Loveless1, A. Ildefonso1

1. Indiana University, USA   2. U.S. Naval Research Laboratory, USA

Distance-based hierarchical clustering links heavy-ion SETs to spatially encoded pulsed- laser libraries, enabling the prediction of interaction locations in a COTS operational amplifier. Topside SPA validates clustering confidence, enabling accurate spatial mapping of heavy-ion-sensitive nodes.

S. Tolson1, X. Zhao1, J. Kronenberg1, N. Pieper1, Y. Xiong1, B. Bhuva1

1. Vanderbilt University, USA

SEU cross-sections of single-port and two-port SRAMs fabricated in a commercial 3-nm bulk FinFET technology node process are estimated using data retention voltage measurements, a simple measure of an SRAM cell’s stability.

G. Gasiot1, S. El Hajji1, T. Thery1, V. Correas1, V. Malherbe1, Y. Xiong2, N. Pieper2,

J. Kronenberg2, J-L. Autran3, B. Bhuva2, D. Pandini4, P. Roche1 1. STMicroelectronics, France 2. Vanderbilt University, USA 3. Institut de Physique de Rennes, France 4. STMicroelectronics, Italy Once validated an industrial Monte Carlo modeling tool is used to explore the error rate response of several Flip Flop designs in 3-nm FinFETs to help designers in selecting the best ones for their needs.

Level 3 Foyer and Terrace

10:45 AM Session Introduction · Chair: Nathan Nowlin (Sandia National Laboratories)

M. Reaz1, N. Rezzak1, V. Nguyen1, J. McCollum1, F. Hawley1, E. Hamdy1

1. Microchip Technology, USA

A novel RHBD 10T FPGA configuration cell in 12-nm FinFETs using 1.8V devices and a high- resistance RC feedback demonstrates SEU immunity from terrestrial-to-GEO environments, with TCAD identifying gate-oxide charge collection causing exceptionally rare high-LET SEUs.

Z. Brumbach1, M. Hosseinzadeh1, Q. Parker1, D. Sam1, B. Ringel1, C. Ellis1, Y. Mensah1, P. Harris2, M. McCurdy2, R. Reed2, J. Cressler1

1. Georgia Institute of Technology, USA   2. Vanderbilt University, USA

TID effects on four distinct SiGe HBT current mirror topologies are analyzed. Simple and cascode current mirrors showed mild degradation, while Wilson and balanced-Wilson topologies did not. Circuit simulations were conducted to understand system-level impact. Comparing the SEE Response of Different RF Topological Design Choices Using Active RF H-3 Isolators D. Sam1, J. Caezza1, J. Teng2, B. Ringel1, G. Tzintzarov2, J. Cressler1 1. Georgia Institute of Technology, USA 2. The Aerospace Corporation, USA A pulsed-laser study compares the SEE response of two RF isolator topologies. Results demonstrate a reduced transient magnitude and duration in one of the topologies, and circuit simulations are leveraged to pinpoint SEE-resilient design choices.

V. Shastry1, J. Park1, S. Seo2, S. Kim2, S. Yi1

1. Texas A&M University, USA   2. University of Rhode Island, USA

Heavy-ion tolerant analog in-memory FFT computation is evaluated using commercial 176- layer TLC 3D NAND flash operated in SLC mode, where widened threshold voltage separation preserves FFT accuracy under heavy-ion exposure despite radiation-induced threshold voltage variability.